CN115000712B - Millimeter wave antenna - Google Patents
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- CN115000712B CN115000712B CN202210927939.7A CN202210927939A CN115000712B CN 115000712 B CN115000712 B CN 115000712B CN 202210927939 A CN202210927939 A CN 202210927939A CN 115000712 B CN115000712 B CN 115000712B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/0414—Substantially flat resonant element parallel to ground plane, e.g. patch antenna in a stacked or folded configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
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Abstract
The application provides a millimeter wave antenna, belongs to electron technical field. A millimeter-wave antenna comprising: the parasitic coupling assembly comprises a first conducting layer, a first dielectric layer and a second conducting layer; the first dielectric layer is provided with a first surface and a second surface which are opposite, the first conducting layer is arranged on the first surface, and the second conducting layer is arranged on the second surface; and the third conducting layer is positioned on one side of the second conducting layer, which is deviated from the first dielectric layer. The first conducting layer, the first medium and the second conducting layer of the millimeter wave antenna form a parasitic coupling assembly and a third conducting layer, the first conducting layer and the second conducting layer are respectively located on two surfaces of the first medium layer, the resonance bandwidth of the parasitic coupling assembly can be expanded, and the outermost conducting ring is arranged on the other surface, so that coupling can be reduced, and coupling between the parasitic coupling assembly and the third conducting layer is not affected.
Description
Technical Field
The application belongs to the technical field of electronics, concretely relates to millimeter wave antenna.
Background
The patch antenna is widely applied to the design of the millimeter wave radar antenna due to the advantages of low profile, high radiation efficiency, easy processing and manufacturing and the like. The patch antenna also has a disadvantage of narrow bandwidth. There are a number of techniques to improve the bandwidth and gain of microstrip antennas. By using the feeding modes such as the L-shaped probe and the T-shaped feeder, the bandwidth of the microstrip antenna can be obviously improved, but the defects of increased complexity of the feeding modes, increased antenna section and the like are brought. Meanwhile, many ways of improving the gain of the microstrip antenna within 10GHz are in the millimeter wave frequency band, and are difficult to be widely used in engineering due to the reasons of complex structure, limited processing precision and the like.
Disclosure of Invention
An object of the application is to provide a millimeter wave antenna, can solve the problem among the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme.
The embodiment of the application provides a millimeter wave antenna, includes:
a parasitic coupling component comprising a first conductive layer, a first dielectric layer, and a second conductive layer; the first dielectric layer is provided with a first surface and a second surface which are opposite, the first conducting layer is arranged on the first surface, and the second conducting layer is arranged on the second surface;
and the third conducting layer is positioned on one side of the second conducting layer, which is deviated from the first dielectric layer.
In some embodiments, a projection of the first conductive layer onto the first dielectric layer is located within a projection of the second conductive layer onto the first dielectric layer.
In some embodiments, the first conductive layer comprises a patch core, a first conductive ring, and a second conductive ring; the patch core is positioned in the center of the first surface, and the first conductive ring and the second conductive ring concentrically surround the patch core;
the second conductive layer includes a third conductive ring concentrically arranged with the first conductive ring.
In some embodiments, the millimeter wave antenna further comprises:
a second dielectric layer disposed between the parasitic coupling component and the third conductive layer;
and the third dielectric layer is arranged on one side of the third conducting layer, which is deviated from the second dielectric layer.
In some embodiments, the third conductive layer comprises a radiating patch and a feed line, the radiating patch and the feed line being connected;
wherein the feed line includes a first width section feed line and a second width section feed line, the first width section feed line being connected with the radiation patch through the second width section feed line; and the width of the first width section feed line is larger than that of the second width section feed line.
In some embodiments, the radiation patch is provided with through holes, the through holes include a first through hole and a second through hole, and the first through hole and the second through hole are symmetrically arranged on the radiation patch.
In some embodiments, the through hole is circular, and the diameter of the circular shape is 0.1 to 0.32mm.
In some embodiments, the length of the radiation patch is 0.70 to 1.4 mm, and the width of the radiation patch is 1.10 to 2.1 mm.
In some embodiments, the first width feeder is 1.60 to 3.20 millimeters in length and 0.60 to 1.05 millimeters in width.
In some embodiments, the length of the second width feeder is 0.40 to 0.80 mm, and the width of the second width feeder is 0.20 to 0.42 mm.
In some embodiments, the thickness of the second dielectric layer is 4 to 16 mm.
In some embodiments, the distance between the patch core and the first conductive ring is 0.24 to 0.48 mm.
In some embodiments, the distance between the first conductive ring and the second conductive ring is 0.24 to 0.48 mm. The width of the first conducting ring and the width of the second conducting ring are 0.24 to 0.48 mm.
In some embodiments, the patch core is square in shape, with the sides of the square being 0.48 to 0.96 mm.
In some embodiments, the width of the third conductive ring is 0.24 to 0.48 mm. The distance between the third conductive ring and the second conductive ring is 0.24 to 0.48 mm.
The application provides a millimeter wave antenna, wherein a first conducting layer, a first medium and a second conducting layer form a parasitic coupling component and are coupled with a third conducting layer, and the first conducting layer and the second conducting layer are respectively positioned on two surfaces of a first medium layer, so that the resonance bandwidth of the parasitic coupling component can be expanded; and, arranging the outermost conductive ring on the other side can reduce coupling without affecting the coupling between the parasitic coupling element and the third conductive layer. In addition, the conducting ring at the outermost layer is arranged on the other surface, so that the wiring complexity of the first conducting layer can be simplified, and the processing difficulty is reduced. The millimeter wave antenna can effectively expand the bandwidth of the antenna by adjusting the distance between the parasitic coupling component and the third conductive layer. The matching degree and the bandwidth of the patch can be further adjusted by arranging the through holes on the third conducting layer.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a millimeter wave antenna provided in an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a first dielectric layer and a first conductive layer according to an embodiment of the present disclosure.
Fig. 3 is a schematic structural diagram of a first dielectric layer and a second conductive layer according to an embodiment of the present disclosure.
Fig. 4 is a schematic view of projections of the first dielectric layer and the second conductive layer on the side of the first conductive layer according to the embodiment of the present application.
Fig. 5 is a schematic structural diagram of a third dielectric layer and a third conductive layer provided in this embodiment of the application.
Fig. 6 is a schematic structural diagram of a third conductive layer according to an embodiment of the present disclosure.
Fig. 7 is a graph of return loss | S11| of the antenna provided in experimental example 1 of the present application.
Fig. 8 is a graph of the broadband gain provided in experimental example 1 of the present application.
Fig. 9 is a smith chart provided in test example 2 of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center", "length", "width", "thickness", "left", "right", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
An embodiment of the present application provides a millimeter wave antenna, as shown in fig. 1, the millimeter wave antenna includes: parasitic coupling component 1 and third conductive layer 230. The parasitic coupling component 1 includes a first conductive layer 210, a first dielectric layer 110, and a second conductive layer 220, which are stacked. Third conductive layer 230 is on a side of second conductive layer 220 facing away from first dielectric layer 110.
Further, the first dielectric layer 110 has a first surface 111 and a second surface 112 opposite to each other, the first conductive layer 210 is disposed on the first surface 111, and the second conductive layer 220 is disposed on the second surface 112.
Further, the projection of first conductive layer 210 onto first dielectric layer 110 is located within the projection of second conductive layer 220 onto first dielectric layer 110.
In the embodiment of the present application, the parasitic coupling element 1 formed by the first conductive layer 210, the first medium 110 and the second conductive layer 220 is coupled to the third conductive layer 230. Moreover, the first conductive layer 210 and the second conductive layer 220 are respectively disposed on two sides of the first dielectric layer 110, that is, respectively disposed on the front and back sides of the first dielectric layer 110, so that the resonance bandwidth of the parasitic coupling component 1 can be expanded.
Further, as shown in fig. 2, the first conductive layer 210 includes a patch core 211, a first conductive ring 212, and a second conductive ring 213. The patch core 211 is centrally located on the first surface 111, and a first conductive ring 212 and a second conductive ring 213 concentrically surround the patch core 211. Specifically, the chip core 211 is disposed at the center of the first surface 111; a first conductive loop 212 is disposed on the first surface 111 around the patch core 211; the second conductive ring 213 is still disposed around the die core 211, and the second conductive ring 213 is disposed outside the first conductive ring 212 on the first surface 111. Further, the distance between the patch core 211 and the first conductive loop 212 may be 0.24 mm, 0.36mm, 0.48 mm. The distance between the first conductive ring 212 and the second conductive ring 213 may be 0.24 mm, 0.36mm, 0.48 mm. The widths of the first conductive ring 212 and the second conductive ring 213 may be 0.24 mm, 0.36mm, 0.48 mm. Further, the first conductive loop 212 and the second conductive loop 213 are both rectangular conductive loops. Further, the chip core 211 is a rectangular chip. For example, the shape of the chip core 211 is a square, and the side length of the square may be 0.48 mm, 0.72mm, 0.96 mm.
Further, as shown in fig. 3, the second conductive layer 220 includes a third conductive ring 221. The third conductive ring 221 is concentrically arranged around the first conductive ring 212. The third conductive ring 221 is a rectangular conductive ring. Further, the width of the third conductive ring 221 may be 0.24 mm, 0.36mm, 0.48 mm. As shown in fig. 4, the dotted line is a pattern of the second conductive layer 220 projected to the surface of the first conductive layer 210. That is, the dotted line is a projection of the third conductive ring 221 onto the first surface 111 of the first medium 110, which is denoted as a projection ring 221', and further, the projection ring 221' is located at an outer layer of the first conductive ring 212 and the second conductive ring 213. It is envisioned that the third conductive ring 221 is disposed on the first dielectric layer 110 on opposite sides of the first conductive ring 212 and the second conductive ring 213, and the third conductive ring 221 is disposed on the outermost layer of the first conductive ring 212 and the second conductive ring 213. Further, the distance between the third conductive ring 221 and the second conductive ring 213 may be 0.24 mm, 0.36mm, or 0.48 mm. In a preferred embodiment, the whole parasitic coupling element 1 has a distance between adjacent conductive loops of 0.36mm, a strip line width of the conductive loops of 0.36mm, and a square patch side length in the middle of the conductive loops of 0.72mm.
When an electromagnetic wave is incident perpendicularly to the first surface, a large amount of surface charges are formed between adjacent conductors (conductive rings), thus causing excessively high parasitic capacitance. While embodiments of the present application arrange the outermost conductive ring on the other side to reduce coupling without affecting the coupling between the parasitic coupling element and the third conductive layer. The wiring complexity of the first conductive layer can also be simplified in terms of processing difficulty.
In some embodiments, as shown in fig. 1, the millimeter wave antenna further includes: a second dielectric layer 120, the second dielectric layer 120 being disposed between the parasitic coupling element 1 and the third conductive layer 230. Further, the thickness of the second dielectric layer 120 is 4 to 16 mm, that is, the distance between the parasitic coupling component 1 and the third conductive layer 230 is 4 to 16 mm. Further, the thickness of the second dielectric layer 120 is 6 to 12 mm or 6 to 10 mm. For example, the thickness of second dielectric layer 120 may be 4 millimeters, 5 millimeters, 6 millimeters, 7 millimeters, 8 millimeters, 9 millimeters, 10 millimeters, 11 millimeters, 12 millimeters, 13 millimeters, 14 millimeters, 15 millimeters, or 16 millimeters. In the embodiment of the present application, the distance between the parasitic coupling element 1 and the third conductive layer 230 can be adjusted by the thickness of the second dielectric layer 120, so as to control the coupling between the parasitic coupling element 1 and the third conductive layer 230.
Further, the third conductive layer 230 is a microstrip patch antenna. Given that the bandwidth of the microstrip patch antenna is narrow, and the resonant frequencies of the parasitic coupling component and the microstrip patch antenna are different, the bandwidth of the antenna can be effectively expanded by placing the parasitic coupling component and the microstrip patch antenna at a preset distance for coupling. In a preferred embodiment, second dielectric layer 120 has a minimum antenna return loss | S11| and a maximum broadband gain when the thickness is 8 mm.
In some embodiments, as shown in fig. 1, the millimeter wave antenna further includes: and a third dielectric layer 130, wherein the third dielectric layer 130 is disposed on a side of the third conductive layer 230 facing away from the second dielectric layer 120. In detail, the third conductive layer 230 is disposed on the third dielectric layer 130, and the second dielectric layer 120 is disposed on the third conductive layer 230.
In some embodiments, as shown in fig. 5, the third conductive layer 230 includes a radiation patch 231 and a feeding line 232, and the radiation patch 231 and the feeding line 232 are connected. Wherein the feeding line 232 includes a first width section feeding line 232a and a second width section feeding line 232b, and the first width section feeding line 232a is connected with the radiation patch 231 through the second width section feeding line 232 b. Further, the width of the first width section power feeding line 232a is larger than that of the second width section power feeding line 232 b. It is understood that the feed line 232 is a stepped impedance feed line.
In some embodiments, the radiating patch 231 may have a length of 0.70 millimeters, 1.08 millimeters, 1.4 millimeters. The width of the radiation patch 231 may be 1.10 mm, 1.62mm, 2.1 mm. Further, the radiation patch 231 is rectangular in shape. The length of the first width feed line 232a may be 1.60 mm, 2.48mm, 3.20 mm. The width of the first width section feed line 232a may be 0.60mm, 0.83mm, 1.05 mm. The length of the second width section feed line 232b may be 0.40 mm, 0.60mm, 0.80 mm. The width of the second width section feed line 232b is 0.20 mm, 0.32mm, 0.42 mm. It is conceivable that the length of the third conductive layer 230 is the total length of the radiation patch 231, the first width section feed line 232a, and the second width section feed line 232 b. Since the width of the radiation patch 231 is greater than that of the feeding line 232, the width of the radiation patch 231 is the width of the third conductive layer 230. Further, the third conductive layer 230 has an axis of symmetry along the length direction.
In some embodiments, as shown in fig. 6, the radiation patch 231 is further provided with a through hole 2311. The radiation patch 231 has a plurality of through holes thereon, and is symmetrically disposed on the radiation patch 231. The through hole 2311 provided on the radiation patch 231 can adjust the matching degree and the bandwidth of the patch. Further, the symmetry axis of the plurality of through holes is the symmetry axis of the third conductive layer 230 along the length direction. Further, the through holes 2311 include a first through hole 2311a and a second through hole 2311b, and the first through hole 2311a and the second through hole 2311b are symmetrically disposed on the radiation patch 231. That is, the first and second through holes 2311a and 2311b are symmetrically disposed at left and right sides of the symmetry axis.
In some embodiments, the shape of the through-hole 2311 is circular, and the diameter of the through-hole 2311 may be 0.10 mm, 0.15 mm, 0.20 mm, 0.22mm, 0.25 mm, 0.30 mm, 0.32mm. In the embodiment of the application, the matching bandwidth can be further expanded by selecting the circular through hole with a proper diameter, so that the bandwidth of the microstrip patch antenna (the third conductive layer 230) with low bandwidth per se is widened. Further, as the diameter of the circular through hole gradually increases, the input impedance gradually changes from capacitive to inductive. In a preferred embodiment, the optimum degree of matching is achieved over a range of frequency bands at a diameter of 0.22mm.
The present application has been repeated several times, and the present invention will now be described in further detail with reference to a part of the test results, which will be described in detail below with reference to specific examples.
Example 1:
the embodiment of the application provides a millimeter wave antenna, as shown in fig. 1, including a parasitic coupling component 1, a second dielectric layer 120, a third conductive layer 230, and a third dielectric layer 130, which are stacked; the parasitic coupling component 1 includes a first conductive layer 210, a first dielectric layer 110, and a second conductive layer 220, which are sequentially stacked. First dielectric layer 110 has opposing first surface 111 and second surface 112, first conductive layer 210 disposed on first surface 111, and second conductive layer 220 disposed on second surface 112.
As shown in fig. 2, the first conductive layer 210 includes a die core 211, a first conductive ring 212, and a second conductive ring 213. The patch core 211 is centrally located on the first surface 111, and a first conductive ring 212 and a second conductive ring 213 concentrically surround the patch core 211. As shown in fig. 3, the second conductive layer 220 includes a third conductive ring 221. The third conductive ring 221 is concentrically arranged around the first conductive ring 212. As shown in 2~4, the projection of first conductive layer 210 onto first dielectric layer 110 is located within the projection of second conductive layer 220 onto first dielectric layer 110, i.e. the projection of third conductive ring 221 onto first surface 111 of first dielectric layer 110 is located outside of first conductive ring 212 and second conductive ring 213. In the whole parasitic coupling assembly, the distance between adjacent conducting rings is 0.36mm, the strip line width of the conducting rings is 0.36mm, and the side length of a square patch core in the middle is 0.72mm.
As shown in fig. 5, the third conductive layer 230 includes a radiation patch 231 and a feeding line 232, and the radiation patch 231 and the feeding line 232 are connected. Wherein the feeding line 232 includes a first width section feeding line 232a and a second width section feeding line 232b, and the first width section feeding line 232a is connected with the radiation patch 231 through the second width section feeding line 232 b. The width of the first width section feed line 232a is larger than that of the second width section feed line 232 b. Of the power feeding lines 232, the first width section power feeding line 232a is 2.48mm, 0.83mm in length and width, respectively; the length and width of the second width section feed line 232b are 0.60mm, 0.32mm, respectively; the height and width of the rectangular radiation patch 231 are 1.08mm and 1.62mm, respectively.
In this embodiment, the thickness h of the second dielectric layer 120 is 8 mm.
Example 2:
this example differs from example 1 only in that: the thickness h of the second dielectric layer is 4 mm.
Example 3:
this example differs from example 1 only in that: the thickness h of the second dielectric layer was 16 mm.
Example 4:
the embodiment of the application provides a millimeter wave antenna, as shown in fig. 1, including a parasitic coupling component 1, a second dielectric layer 120, a third conductive layer 230, and a third dielectric layer 130, which are stacked. The parasitic coupling component includes a first conductive layer 210, a first dielectric layer 110, and a second conductive layer 220, which are sequentially stacked. First dielectric layer 110 has opposing first surface 111 and second surface 112, first conductive layer 210 disposed on first surface 111, and second conductive layer 220 disposed on second surface 112.
The thickness h of second dielectric layer 120 is 8 millimeters.
As shown in fig. 2, the first conductive layer 210 includes a die core 211, a first conductive ring 212, and a second conductive ring 213. The patch core 211 is located in the center of the first surface 111, and a first conductive ring 212 and a second conductive ring 213 concentrically surround the patch core 211. The second conductive layer 220 includes a third conductive ring 221. The third conductive ring 221 is concentrically arranged around the first conductive ring 212. As shown in 2~4, the projection of first conductive layer 210 onto first dielectric layer 110 is located within the projection of second conductive layer 220 onto first dielectric layer 110, i.e. the projection of third conductive ring 221 onto first surface 111 of first dielectric layer 110 is located outside of first conductive ring 212 and second conductive ring 213. In the whole parasitic coupling assembly, the distance between adjacent conducting rings is 0.36mm, the strip line width of the conducting rings is 0.36mm, and the side length of a square patch core in the middle is 0.72mm.
As shown in fig. 6, the third conductive layer 230 includes a radiation patch 231 and a feeding line 232, and the radiation patch 231 and the feeding line 232 are connected. Wherein the feeding line 232 includes a first width section feeding line 232a and a second width section feeding line 232b, and the first width section feeding line 232a is connected with the radiation patch 231 through the second width section feeding line 232 b. The width of the first width section feed line 232a is larger than that of the second width section feed line 232 b. In the feeder line 232, the first width section feeder line 232a is 2.48mm, 0.83mm in length and width, respectively; the second width section feeder line 232b is 0.60mm, 0.32mm long and wide, respectively; the height and width of the rectangular radiation patch 231 are 1.08mm and 1.62mm, respectively. The radiation patch 231 is further provided with a first through hole 2311a and a second through hole 2311b, and the first through hole 2311a and the second through hole 2311b are symmetrically arranged on the radiation patch 231. The through hole 2311 is circular in shape, and the diameter d of the circle is 0.22mm.
Example 5:
this example differs from example 4 only in that: the shape of the through hole is circular, and the diameter d of the circular shape is 0.1mm.
Example 6:
this example differs from example 4 only in that: the shape of the through hole is circular, and the diameter d of the circular shape is 0.32mm.
Test example 1
The experimental example studies the effect of the thickness h of the second dielectric layer in the millimeter wave antenna on the antenna return loss | S11| and the broadband gain of the third conductive layer, wherein only the patch is used as a blank control group, and the embodiment 1~3 is used as an experimental group, and the results are shown in fig. 7 and 8.
According to fig. 7 and 8, the thickness-to-space coupling of the present application can effectively extend the bandwidth of the antenna. The preferred embodiment of the present invention is that the maximum gain and the minimum return loss are obtained when the thickness h of the second dielectric layer is adjusted to 8 mm.
Test example 2
This experimental example is to study the influence of the diameter of the through hole of the third conductive layer in the embodiment 4~6 on the bandwidth of the third conductive layer, and please refer to the smith (smith) chart shown in fig. 9 in detail.
According to fig. 9, the embodiment of the present application can further expand the matching bandwidth under a specific condition, so that the bandwidth of the microstrip antenna with low bandwidth per se is widened. It is evident from the smith chart that as the diameter of the circle gradually increases, the input impedance gradually changes from capacitive to inductive. In particular, with a circular diameter of 0.22mm, there is an optimum degree of matching in the frequency band range.
To sum up, according to the millimeter wave antenna provided by the embodiment of the present application, the first conductive layer, the first medium, and the second conductive layer form a parasitic coupling component and couple with the third conductive layer, the first conductive layer and the second conductive layer are respectively located on two surfaces of the first medium layer, so that the resonance bandwidth of the parasitic coupling component itself can be expanded, and the outermost conductive ring is arranged on the other surface, so that coupling can be reduced, and coupling between the parasitic coupling component and the third conductive layer is not affected. In addition, the millimeter wave antenna can effectively expand the bandwidth of the antenna by adjusting the thickness of the second dielectric layer (i.e., the distance between the parasitic coupling component and the third conductive layer). The millimeter wave antenna of this application adjusts the matching degree and the bandwidth of paster through the through-hole of third conducting layer.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The millimeter wave antenna provided by the embodiment of the present application is described in detail above, and a specific example is applied in the description to explain the principle and the implementation of the present application, and the description of the above embodiment is only used to help understanding the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (7)
1. A millimeter-wave antenna, comprising:
a parasitic coupling component (1), the parasitic coupling component (1) comprising a first conductive layer (210), a first dielectric layer (110), and a second conductive layer (220); the first dielectric layer (110) has a first surface (111) and a second surface (112) opposite to each other, the first conductive layer (210) is disposed on the first surface (111), and the second conductive layer (220) is disposed on the second surface (112);
a third conductive layer (230), the third conductive layer (230) being located on a side of the second conductive layer (220) facing away from the first dielectric layer (110);
a second dielectric layer (120), the second dielectric layer (120) disposed between the parasitic coupling component (1) and the third conductive layer (230);
a third dielectric layer (130), wherein the third dielectric layer (130) is arranged on one side of the third conducting layer (230) which is far away from the second dielectric layer (120);
wherein a projection of the first conductive layer (210) onto the first dielectric layer (110) is located within a projection of the second conductive layer (220) onto the first dielectric layer (110);
the first conducting layer (210) comprises a patch core (211), a first conducting ring (212) and a second conducting ring (213); the patch core (211) is located at the center of the first surface, and the first conductive ring (212) and the second conductive ring (213) concentrically surround the patch core (211);
the second conductive layer (220) comprises a third conductive ring (221), and the third conductive ring (221) is concentrically arranged around the first conductive ring (212).
2. The millimeter-wave antenna according to claim 1, characterized in that the third conductive layer (230) comprises a radiation patch (231) and a power feed line (232), the radiation patch (231) and the power feed line (232) being connected;
wherein the feed line (232) comprises a first width feed line (232 a) and a second width feed line (232 b), the first width feed line (232 a) being connected with the radiation patch (231) through the second width feed line (232 b); and, the width of the first width section feed line (232 a) is larger than the width of the second width section feed line (232 b).
3. The millimeter-wave antenna according to claim 2, wherein the radiation patch (231) is provided with a through hole (2311), the through hole (2311) comprising a first through hole (2311 a) and a second through hole (2311 b), the first through hole (2311 a) and the second through hole (2311 b) being symmetrically provided on the radiation patch (231).
4. The millimeter-wave antenna according to claim 3, wherein the through hole (2311) is circular and has a diameter of 0.1 to 0.32mm.
5. The millimeter-wave antenna according to claim 2, wherein the length of the radiating patch (231) is 0.70 to 1.4 mm, and the width of the radiating patch (231) is 1.10 to 2.1 mm;
the length of the first width feeder line (232 a) is 1.60 to 3.20 millimeters, and the width of the first width feeder line (232 a) is 0.60 to 1.05 millimeters;
the length of the second width feeder line (232 b) is 0.40 to 0.80 mm, and the width of the second width feeder line (232 b) is 0.20 to 0.42 mm.
6. The millimeter-wave antenna according to claim 1, wherein the thickness of the second dielectric layer (120) is 4 to 16 mm.
7. The millimeter wave antenna according to claim 1, wherein the distance between the patch core (211) and the first conductive ring (212) is 0.24 to 0.48 mm; the distance between the first conductive ring (212) and the second conductive ring (213) is 0.24 to 0.48 mm;
the widths of the first conducting ring (212) and the second conducting ring (213) are 0.24 to 0.48 mm;
the patch core (211) is square, and the side length of the square is 0.48-0.96 mm;
the width of the third conductive ring (221) is 0.24 to 0.48 mm;
the distance between the third conductive ring (221) and the second conductive ring (213) is 0.24 to 0.48 mm.
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Citations (10)
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