CN115000197B - Extremely high gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof - Google Patents
Extremely high gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of semiconductor photodetectors, and discloses an extremely high-gain 4H-SiC-based broad-spectrum photoelectric transistor, which comprises a 4H-SiC substrate, wherein a first Ag nanoparticle electrode and a second Ag nanoparticle electrode are arranged on a silicon surface of the 4H-SiC substrate, and a gap is arranged between the first Ag nanoparticle electrode and the second Ag nanoparticle electrode; the first Ag nano particle electrode and the second Ag nano particle electrode are formed by randomly distributing Ag nano particles; an aluminum oxide layer is arranged on the carbon surface of the 4H-SiC substrate, and a grid electrode Ag layer is arranged on the aluminum oxide layer; the first Ag nano-particle electrode and the second Ag nano-particle electrode are respectively used as a source electrode and a drain electrode, and the grid electrode Ag layer is used as a grid electrode. The invention has the advantages of excellent detection performance, simple preparation process and low cost.
Description
Technical Field
The invention belongs to the technical field of semiconductor photodetectors, and particularly relates to an extremely high-gain 4H-SiC-based broad-spectrum phototransistor and a preparation method thereof.
Background
The photoelectric detector is widely applied to national life and military. The transistor type photoelectric detector has the advantages of high input resistance, small noise, large dynamic range, low power consumption, wide safety working area, easy integration and the like, can realize high current output gain under low bias voltage, is hopeful to be interconnected with a read-out circuit chip to realize the research and development of imaging devices, and has good application prospect in the fields of imaging and the like.
Photoelectric detectors based on conventional semiconductor materials such as silicon, germanium, group III arsenide, lead sulfide and the like are widely applied to the fields of optical fiber communication, laser ranging, industrial control, missile guidance, infrared sensing and the like. However, these devices cannot operate in extreme environments due to the characteristics of the semiconductor material. Compared with the traditional semiconductor materials, the wide-bandgap semiconductor material has the advantages of large bandgap, high saturated electron velocity, high electron mobility, small dielectric constant, good conductivity and the like, so that the power device based on the wide-bandgap semiconductor material has the characteristics of high critical breakdown field strength, small parasitic capacitance, high working temperature and the like. Compared with other third generation wide bandgap semiconductor materials, the silicon carbide (SiC) material has the earliest research start, the most mature technology and obvious advantages in light absorption, defect state density and the like. SiC exhibits a variety of crystal configurations, and is commonly known as 3C-SiC, 4H-SiC, and 6H-SiC. Among them, 4H-SiC has higher carrier mobility, and is more advantageous in practical applications. The common 4H-SiC-based photodetectors are two-end photodetectors, and mainly comprise metal-semiconductor-metal (MSM) photodetectors, schottky barrier photodetectors, pn photodiodes, p-i-n photodiodes, avalanche diodes and the like, and the response rates of the photodetectors are generally low. While 4H-SiC transistor type photodetectors having a three-terminal structure can achieve high current gain, attention has been paid in recent years. Through investigation, all reported transistor type 4H-SiC-based ultraviolet detectors contain doped 4H-SiC functional layers, but the doped layers are required to be obtained through processes such as epitaxy or ion implantation, and the manufacturing process is complex, so that the device cost is high. Moreover, all 4H-SiC-based phototransistors that have been reported are only responsive to ultraviolet light and hardly responsive to visible and near infrared light. Therefore, the 4H-SiC-based broad spectrum phototransistor with low cost and high gain and the preparation method thereof are searched and have important significance.
Disclosure of Invention
The invention overcomes the defects existing in the prior art, and solves the technical problems that: an extremely high gain 4H-SiC-based broad spectrum photoelectric transistor and a preparation method thereof are provided to realize high performance detection of photoelectric signals.
In order to solve the technical problems, the invention adopts the following technical scheme: the extremely high gain 4H-SiC-based broad spectrum photoelectric transistor comprises a 4H-SiC substrate, wherein a first Ag nano particle electrode and a second Ag nano particle electrode are arranged on a silicon surface of the 4H-SiC substrate, and a gap is arranged between the first Ag nano particle electrode and the second Ag nano particle electrode; the first Ag nano particle electrode and the second Ag nano particle electrode are formed by randomly distributing Ag nano particles, and are prepared by acting an Ag film layer on a silicon surface of a prepared 4H-SiC substrate through a cyclic voltammetry annealing method;
an aluminum oxide layer is arranged on the carbon surface of the 4H-SiC substrate, and a grid Ag layer is arranged on the aluminum oxide layer;
the first Ag nano particle electrode and the second Ag nano particle electrode are respectively used as a source electrode and a drain electrode, and the grid electrode Ag layer is used as a grid electrode.
In the first Ag nano particle electrode and the second Ag nano particle electrode, the diameter of the Ag nano particle is 170nm plus or minus 20nm, the height of the Ag nano particle is 100nm plus or minus 20nm, and the width of a gap between the Ag nano particles is 250nm plus or minus 20nm;
the first Ag nano particle electrode and the second Ag nano particle electrode are square, and the side length is 230 mu m plus or minus 50 mu m.
The gap width between the first Ag nano particle electrode and the second Ag nano particle electrode is as follows: 30 μm.+ -. 10 μm.
The thickness of the 4H-SiC substrate is 100-1000 mu m, the thickness of the alumina layer is 0.6nm +/-0.12 nm, and the thickness of the grid Ag layer is 100nm +/-20 nm.
In addition, the invention also provides a preparation method of the extremely high-gain 4H-SiC-based broad spectrum phototransistor, which comprises the following steps:
s1, calibrating a carbon surface and a silicon surface of a silicon carbide substrate by an atomic force microscope, and cleaning and drying the silicon carbide substrate;
s2, depositing an aluminum oxide layer on the carbon surface of the 4H-SiC substrate by utilizing an atomic layer deposition technology;
s3, arranging a mask on the silicon surface of the 4H-SiC substrate, and depositing an Ag film layer for preparing the first Ag nano-particle electrode and the second Ag nano-particle electrode on the silicon surface of the 4H-SiC substrate by utilizing a magnetron sputtering technology;
s4, preparing a grid Ag layer on one side of the alumina layer by utilizing a magnetron sputtering technology;
s5, converting the Ag film layer prepared in the step S3 into a first Ag nano-particle electrode and a second Ag nano-particle electrode serving as a source electrode and a drain electrode by using a cyclic voltammetry annealing method.
The specific method in the step S5 is as follows:
s501, selecting two adjacent square Ag films in the Ag film layer as a source electrode and a drain electrode, and respectively connecting the source electrode, the drain electrode and a grid electrode with a power supply by adopting a common source electrode connection method;
s502, supplying-15V bias voltage to the source electrode, supplying voltage changing from-200V to the grid electrode, increasing the voltage to 2V, stabilizing each bias voltage for 2S, and circularly scanning the voltage for a plurality of times until the leakage current I D When the scanning is stopped during the surge, the effect of annealing the Ag film is realized, and the Ag nano particle layer serving as a source electrode and a drain electrode is formed.
In step S501, the source is connected to the high level terminal of the first power supply, the gate is connected to the high level terminal of the second power supply, the drain is connected to the low level terminal of the first power supply, and the low level terminals of the first power supply and the second power supply are commonly connected to ground.
The mask plate adopted in the step S3 is a copper screen mask plate, the geometric parameter of the copper screen mask plate is that the side length of a square grid is 230 mu m plus or minus 50 mu m, the rib width is 30 mu m plus or minus 10 mu m, and the thickness is 20-30 mu m; the thickness of the sputtered Ag film layer is 15nm + -5 nm.
The specific method in the step S2 is as follows:
s201, opening circulating water of an atomic layer deposition system for refrigeration, inflating and opening a cabin door, closely installing a trimethylaluminum and water vapor raw material bottle and a manual valve, closing the cabin door, setting the temperature of a deposition chamber to 150 ℃ through a computer, setting the flow of carrier gas to 30sccm after the temperature is stable, setting the type, time, flow, reaction time and cleaning time of each raw material, and controlling the deposition speed to be 0.06nm per cycle. Setting the waiting time to be 1 minute, and starting a pre-deposition 40 cycle;
s202, after the pre-deposition is finished, inflating and opening a cabin door, loading the carbon surface loaded with the 4H-SiC substrate upwards in an atomic layer deposition chamber, setting proper circulation times, and starting formal deposition;
and S203, when the film thickness requirement is met, the deposition is automatically completed, and when the temperature of the deposition chamber is reduced to the room temperature, the sample is inflated and taken out.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides an extremely high gain 4H-SiC-based broad spectrum photoelectric transistor and a preparation method thereof, wherein a first Ag nano particle electrode and a second Ag nano particle electrode are respectively arranged on one side of a 4H-SiC semiconductor and serve as a source electrode and a drain electrode, and an aluminum oxide layer and a grid electrode Ag layer which are thick in atomic level are arranged on the other side of the 4H-SiC semiconductor. Wherein the Ag nano particle electrode is obtained by acting on the Ag film electrode by using a cyclic voltammetry annealing method. According to the invention, the effect of hot carrier injection is generated by exciting surface plasmons of the Ag nano particle electrode layer, so that the bright current is obviously improved compared with a control photoelectric transistor device which does not use cyclic voltammetry annealing. When the gate-source voltage V GS =3v and source-drain voltage V SD At a wavelength of 375nm (10.2 mW/cm =20V 2 ) Under the irradiation of light, the bright state leakage current I of the invention D 1.5X10 -4 A, compared with the control device (9.1X10) -8 A) The lifting is 1647 times higher.
2. The invention can realize detection of incident light with 300-900nm wide spectrum, the response rate is above 100A/W, and particularly, the response rate is 4.2 multiplied by 10 under the wavelength of 360nm 5 A/W。
3. The invention has high transient response speed, can perform stable response to the incident pulse optical signal, and has the response speed of about 1.34s.
Therefore, the invention realizes the 4H-SiC-based broad spectrum phototransistor with extremely high gain, has excellent detection performance, and has very simple preparation process and lower cost.
Drawings
Fig. 1 is a schematic structural diagram of an extremely high gain 4H-SiC-based broad spectrum phototransistor according to an embodiment of the present invention. Wherein 1 is a 4H-SiC layer, 2 is an alumina layer, 3 is a first Ag nano-particle electrode, 4 is a second Ag nano-particle electrode, and 5 is a grid electrode Ag layer.
Fig. 2 is a microscopic morphology diagram of a square Ag film array used as a source or a drain before cyclic voltammetry annealing of an extremely high gain 4H-SiC-based broad spectrum phototransistor according to an embodiment of the present invention.
Fig. 3 is an SEM topography of the surface of an Ag nanoparticle layer used as a source or a drain after cyclic voltammetry annealing of an extremely high gain 4H-SiC-based broad spectrum phototransistor according to an embodiment of the present invention.
FIG. 4 shows a very high gain 4H-SiC-based broad spectrum phototransistor and a control device thereof according to an embodiment of the present invention in V GS At 3V, in bright state I D Along with V SD Is a graph of the change in the light conditions: wavelength 375nm, power density 10.2mW/cm 2 。
FIG. 5 shows a very high gain 4H-SiC-based broad spectrum phototransistor according to an embodiment of the present invention at V GS When changing from-18V to 18V, I in bright state D Along with V SD Is a graph of the change in the light conditions: wavelength 375nm, power density 10.2mW/cm 2 。
FIG. 6 is a response spectrum of an extremely high gain 4H-SiC-based broad spectrum phototransistor according to an embodiment of the present invention in a wavelength range of 300nm to 900nm, and a bias condition: v (V) GS =3v and V SD At=200v, light conditions: xenon lamp light source is externally added with monochromator to output monochromatic light, and the power density is mu W/cm 2 Horizontal.
FIG. 7 is a graph showing the linear dynamic range performance of an extremely high gain 4H-SiC-based broad spectrum phototransistor according to the present invention at 375nm wavelength, and the bias conditions during testing: v (V) GS =3v and V SD When=200v.
FIG. 8 is a graph showing transient current response of a very high gain 4H-SiC-based broad spectrum phototransistor according to the present invention, bias conditions during testing: v (V) GS =3v and V SD At=200v, light conditions: wavelength 375nm, power density 10.2mW/cm 2 。
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
As shown in fig. 1, the embodiment of the invention provides a very high gain 4H-SiC-based broad spectrum phototransistor, which comprises a 4H-SiC substrate 1, wherein a first Ag nanoparticle electrode 3 and a second Ag nanoparticle electrode 4 are arranged on a silicon surface of the 4H-SiC substrate 1, and a gap is arranged between the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4; the first Ag nano particle electrode 3 and the second Ag nano particle electrode 4 are formed by randomly distributing Ag nano particles, and are prepared by acting an Ag film layer on the silicon surface of the prepared 4H-SiC substrate 1 through a cyclic voltammetry annealing method; the carbon surface of the 4H-SiC substrate 1 is provided with alumina (Al 2 O 3 ) A layer 2, wherein a grid Ag layer 5 is arranged on the alumina layer 2; the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4 serve as a source electrode and a drain electrode, respectively, and the gate Ag layer 5 serves as a gate electrode.
Specifically, in this embodiment, after loading a copper screen mask above the silicon surface of 4H-SiC, a plurality of square metal electrodes that can be used as a source electrode and a drain electrode of a control device respectively are prepared by using a magnetron sputtering technology, and then an alumina layer 2 and a gate Ag layer 5 are prepared on the carbon surface, as shown in fig. 2, any two adjacent square metal electrodes can be used as a source electrode and a drain electrode respectively. When the device is connected with a power supply and is processed by a cyclic voltammetry annealing method, the morphology of a source electrode and a drain electrode is changed to form Ag nano particles shown in figure 3, and the wide-spectrum photoelectric transistor is obtained. The Ag nano particle layer has the capability of efficiently absorbing incident light with a wide spectrum, can generate a large number of hot carriers, and can be injected into the 4H-SiC through crossing a potential barrier, so that the conductivity distribution in the 4H-SiC is changed. The conductivity change of 4H-SiC is a precondition for the subsequent transistor amplification behavior.
In this example, the thickness of the Ag film before cyclic voltammetry annealing15 nm.+ -. 5nm, V during annealing GS Applying a bias of-15V, V SD Applying voltage varying from-200V to 200V, increasing voltage to 2V, stabilizing each bias voltage for 2s, and circularly scanning for a certain number of times (50+ -10 times), wherein the leakage current I D And (3) rapidly increasing, and stopping scanning at the moment to obtain the Ag nano-particles serving as the source electrode and the drain electrode.
Specifically, in this embodiment, in the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4, the Ag nanoparticle diameter is 170nm±20nm, the particle height is 100nm±20nm, and the gap width between the particles is 250nm±20nm.
The first Ag nano particle electrode 3 and the second Ag nano particle electrode 4 are square, and the side length is 230 mu m plus or minus 50 mu m. The gap width between the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4 is: 30 μm.+ -. 10 μm. The thickness of the 4H-SiC substrate 1 is 100-1000 mu m, the thickness of the alumina layer 2 is 0.6nm +/-0.12 nm, and the thickness of the grid Ag layer 5 is 100nm +/-20 nm.
Preferably, in this embodiment, in the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4, the Ag nanoparticle diameter is 170nm±2nm, the particle height is 100nm±2nm, and the gap width between the particles is 250nm±2nm.
Further, in this embodiment, after a copper screen mask is loaded above the silicon surface of the 4H-SiC substrate, a square Ag film for preparing a source electrode and a drain electrode is deposited by using a magnetron sputtering technology, and any two opposite electrodes can be used as the source electrode and the drain electrode during cyclic voltammetry annealing, respectively. While the bottom gate electrode is fabricated without loading any mask. In the specific test process, a common source connection method is adopted, and the source stage is grounded.
Specifically, in this embodiment, the source electrode and the drain electrode before annealing are square electrodes with a side length of 230 μm+ -50 μm, the thicknesses of the source electrode and the drain electrode before annealing are 15 nm+ -5 nm, and the distance between the source electrode and the drain electrode before annealing is 30 μm+ -10 μm.
Preferably, in this embodiment, the source electrode and the drain electrode before annealing are square electrodes, the side length of which is 230 μm+ -1 μm, the thicknesses of the source electrode and the drain electrode before annealing are 15 nm+ -1 nm, and the distance between the source electrode and the drain electrode before annealing is 30 μm+ -1 μm.
Further, in this example, the 4H-SiC substrate is semi-insulating, weak n-type, and has a resistivity of between 1e13 ohm-cm and 1e15 ohm-cm.
Preferably, in this embodiment, the 4H-SiC substrate is semi-insulating, is weakly n-type, and has a resistivity between 5e13 ohm-cm and 5e14 ohm-cm.
Preferably, in this embodiment, the thickness of the 4H-SiC substrate is 500 μm+ -20 μm, the thickness of the alumina layer 2 is 0.6 nm+ -0.06 nm, and the thickness of the gate Ag layer is 100 nm+ -5 nm.
The embodiment of the invention provides an extremely high-gain 4H-SiC-based broad-spectrum photoelectric transistor and a preparation method thereof. A4H-SiC-based broad spectrum phototransistor is manufactured by arranging a source Ag nano particle layer and a drain Ag nano particle layer on one side of a 4H-SiC semiconductor and arranging an aluminum oxide layer with atomic-level thickness and a grid Ag layer on the other side of the 4H-SiC semiconductor. Specifically, the source electrode Ag nano particle layer and the drain electrode Ag nano particle layer are prepared by a cyclic voltammetry annealing method on the basis of manufacturing an electrode Ag film. The Ag nano particle layer plays a role in exciting surface plasmons to generate hot carrier injection. The present invention achieves a significant increase in bright current compared to a control phototransistor device that does not use cyclic voltammetry annealing. When the gate-source voltage V GS = -6V and source drain voltage V SD At a wavelength of 375nm (10.2 mW/cm =20V 2 ) Under the irradiation of light, the bright state leakage current I of the invention D 1.5X10 -4 A, compared with the control device (9.1X10) -8 A) The lifting is 1647 times higher. The invention can realize detection of incident light with 300-900nm wide spectrum, and the response rate is above 100A/W. Therefore, the invention realizes the 4H-SiC-based wide-spectrum photoelectric transistor with extremely high gain, and the preparation process is very simple and the cost is relatively low.
Example two
The second embodiment of the invention provides a preparation method of an extremely high-gain 4H-SiC-based broad spectrum phototransistor, wherein the adopted materials are as follows:
4H-SiC substrate, ag target, deionized water, nitric acid, detergent, acetone, absolute ethyl alcohol and copper mesh mask. The combined dosage and the screening standard are as follows:
4H-SiC substrate: semi-insulating, weak n-type, resistivity of 1e14 ohm cm, area of 20mm×20mm, thickness of 500 μm;
ag target: binding a solid, copper backboard, and 99.999% purity;
deionized water: h 2 O 8000mL±50mL；
Nitric acid: HNO (HNO) 3 ，68％
Liquid detergent: 2+ -0.5 mL;
acetone: CH (CH) 3 COCH 3 250 mL±5mL；
Absolute ethyl alcohol: c (C) 2 H 5 OH 500mL±5mL；
Copper mesh mask: copper; the width of the net is 30 mu m, the side length of the net is 230 mu m, and the thickness is 20-30 mu m.
The preparation method of the extremely high-gain 4H-SiC-based broad spectrum phototransistor provided by the embodiment specifically comprises the following steps.
S1, calibrating a carbon surface and a silicon surface of a silicon carbide substrate by an atomic force microscope, and cleaning and drying the silicon carbide substrate.
In the step S1, the method for cleaning the 4H-SiC substrate comprises the following steps:
s101, placing a 4H-SiC substrate into a polytetrafluoroethylene beaker, then adding concentrated nitric acid into the polytetrafluoroethylene beaker, covering the mouth of the beaker with aluminum foil paper, performing ultrasonic soaking for more than 20 minutes, then taking out the 4H-SiC substrate, washing with clear water, and removing residual solution;
s102, coating detergent and decontaminating agent on the surface of the 4H-SiC substrate, and repeatedly rubbing until the surface of the 4H-SiC substrate is washed by clean water, so that a uniform water film can be formed on the surface of the 4H-SiC substrate;
s103, then, vertically placing the 4H-SiC substrate in a beaker frame and placing the substrate in a glass beaker. Adding deionized water, acetone and absolute ethyl alcohol in sequence, and respectively carrying out ultrasonic treatment for 15min. After the ultrasonic treatment is finished, the cleaned 4H-SiC substrate is put into a beaker filled with isopropanol and is stored for standby.
S2, depositing an aluminum oxide layer 2 on the carbon surface of the 4H-SiC substrate by utilizing an atomic layer deposition technology.
The specific method in the step S2 is as follows:
s201, opening circulating water of an atomic layer deposition system for refrigeration, inflating and opening a cabin door, closely installing a trimethylaluminum and water vapor raw material bottle and a manual valve, closing the cabin door, setting the temperature of a deposition chamber to 150 ℃ through a computer, setting the flow of carrier gas to 30sccm after the temperature is stable, setting the type, time, flow, reaction time and cleaning time of each raw material, and controlling the deposition speed to be 0.06nm per cycle. The wait time was set to 1 minute and the pre-deposition 40 cycle was started.
And S202, after the pre-deposition is finished, inflating and opening the cabin door, loading the carbon surface loaded with the 4H-SiC substrate into the atomic layer deposition chamber upwards, starting formal deposition, and setting proper circulation times to meet the required film thickness requirement (0.6 nm).
And S203, when the film thickness requirement is met, the deposition is automatically completed, when the temperature of the deposition chamber is reduced to the room temperature, the sample is taken out through inflation, the metal mask is not removed, and the next step is prepared. And then, vacuumizing the instrument, closing the manual valve, and evacuating all residual raw materials in the pipeline. And (3) inflating the air to the atmospheric pressure, closing the vacuum pump, stopping heating, and closing the power switch of the equipment when the temperature is reduced to the room temperature.
S3, arranging a mask on the silicon surface of the 4H-SiC substrate, and depositing an Ag film layer for preparing the first Ag nano-particle electrode 3 and the second Ag nano-particle electrode 4 on the silicon surface of the 4H-SiC substrate by utilizing a magnetron sputtering technology.
The mask plate adopted in the step S3 is a copper screen mask plate, the geometric parameter of the copper screen mask plate is that the side length of a square grid is 230 mu m plus or minus 50 mu m, the rib width is 30 mu m plus or minus 10 mu m, and the thickness is 20-30 mu m; the thickness of the sputtered Ag film layer is 15nm + -5 nm.
The specific method in the step S3 is as follows:
s301, attaching a copper mesh mask on a silicon surface of a 4H-SiC substrate;
s302, mounting the Ag target on a target head of a magnetron sputtering coating machine. And then, placing the 4H-SiC substrate attached with the copper mesh on a sample holder of a magnetron sputtering coating machine, and taking care of protecting the prepared film. And rotating the sample tray to enable the 4H-SiC substrate to be positioned right above the Ag target.
S303, closing a magnetron sputtering cabin door, clicking a display screen to start, and opening a vacuum gauge and a molecular pump, wherein the cabin body pressure reaches 10 -4 And when Pa, sequentially opening an argon magnetic control valve, a mechanical valve and a flowmeter, selecting proper argon flow, and then adjusting a gate valve of a molecular pump to maintain the cavity pressure at 2Pa.
S304, a sputtering power supply is turned on, and the power required by sputtering is regulated (after starting, the pressure can be further regulated through a gate valve, so that the sputtering rate reaches the film forming requirement). Pre-sputtering for 10 min, and then performing formal sputtering.
S305, when the required film thickness is reached, the large baffle plate and the radio frequency sputtering power supply are sequentially turned off. Finally, the device is taken out from the coating chamber, and the adhesive tape is slowly uncovered by tweezers to remove the copper mesh.
S4, preparing a grid Ag layer on one side of the aluminum oxide layer 2 by utilizing a magnetron sputtering technology.
The specific method in the step S4 is as follows:
s401, confirming that the Ag target is mounted on a target head of the magnetron sputtering coating machine. Then, the 4H-SiC substrate is placed on a sample holder of a magnetron sputtering coating machine, and Al is deposited 2 O 3 One side of the layer is the side to be deposited, which is facing down, taking care to protect the already made film. And rotating the sample tray to enable the 4H-SiC substrate to be positioned right above the Ag target.
S402, closing a magnetron sputtering cabin door, clicking a display screen to start, and opening a vacuum gauge and a molecular pump, wherein the cabin body pressure reaches 10 -4 And when Pa, sequentially opening an argon magnetic control valve, a mechanical valve and a flowmeter, selecting proper argon flow, and then adjusting a gate valve of a molecular pump to maintain the cavity pressure at 2Pa.
S403, turning on a sputtering power supply, and adjusting the power required by sputtering (after starting, the pressure can be further adjusted through a gate valve, so that the sputtering rate reaches the film forming requirement). Pre-sputtering for 10 min, and then performing formal sputtering.
S404, when the required film thickness is reached, the large baffle plate and the radio frequency sputtering power supply are sequentially closed. Finally, the device is taken out of the coating chamber for standby.
S5, converting the Ag film layer prepared in the step S3 into a first Ag nano-particle electrode and a second Ag nano-particle electrode serving as a source electrode and a drain electrode by using a cyclic voltammetry annealing method.
The specific method in the step S5 is as follows:
s501, selecting two adjacent square Ag films in the Ag film layer as a source electrode and a drain electrode, and respectively connecting the source electrode, the drain electrode and the grid electrode with a power supply by adopting a common source electrode connection method.
In this embodiment, the source is connected to the high level terminal of the first power supply, the gate is connected to the high level terminal of the second power supply, the drain is connected to the low level terminal of the first power supply, and the low level terminals of the first power supply and the second power supply are commonly connected to ground.
S502, supplying-15V bias voltage to the source electrode, supplying voltage changing from-200V to the grid electrode, increasing the voltage to 2V, stabilizing each bias voltage for 2S, and after voltage cycle scanning for multiple times, leaking current I D The scanning is stopped during the surge, the annealing effect of the Ag film is realized, and the Ag nano particle layer serving as a source electrode and a drain electrode is formed.
Specifically, in the present embodiment, the leakage current I is set at 50±10 times of voltage cycle scanning D To a burst of 10 -4 The magnitude of the annealing effect on the Ag film is realized.
In the present embodiment, V is supplied by a first power supply GS Applying a bias voltage of-15V to V by a second power supply SD Applying voltage varying from-200V to 200V, increasing voltage to 2V, stabilizing each bias voltage for 2s, and circulating the voltage for a certain number of times (50+ -10 times) to obtain leakage current I D The scanning is stopped at the moment, the process realizes the annealing effect on the Ag film, forms an Ag nano particle layer serving as a source electrode and a drain electrode, and collects samples, so that the extremely high-gain 4H-SiC-based broad spectrum phototransistor is obtained.
Detection, analysis and characterization: and detecting, analyzing and characterizing the performance of the prepared extremely high gain 4H-SiC-based broad spectrum phototransistor.
The bright state current-voltage characteristic of the device was characterized using Agilent B2902 using a Thorlabs 375nm LED as the light source. And obtaining a monochromatic light source by using a xenon lamp and a monochromator, irradiating the monochromatic light source onto the surface of a sample after collimation, testing the bright state current-voltage characteristic curves of the transistor devices under different wavelengths by using Agilent B2902, and drawing a response rate spectrogram of the devices based on the bright state current-voltage characteristic curves. An attenuation sheet is added in front of the Thorlabs 375nm LED to change the illumination intensity, thus representing the linear dynamic range of the device. The signal generator is used for controlling the Thorlabs 375nm LED to serve as a light source, and Agilent B2902 is used for representing transient photocurrent response characteristics of the device.
Conclusion: the current-voltage characteristics of the extremely high gain 4H-SiC-based broad spectrum phototransistor of the present invention were analyzed. First, the morphology of the source and drain electrodes of the phototransistor device before and after cyclic voltammetry annealing is observed, the micrograph of the electrode before annealing is shown in fig. 2, and the morphology of the SEM after annealing is shown in fig. 3. As can be seen from the figure, a random distribution of Ag nanoparticle layers was formed on the otherwise smooth and flat Ag electrode. For this transistor type device, the drain current I is according to kirchhoff's law D ＝I SD +I GD Wherein I SD 、I GD The current flowing from the source to the drain and the current flowing from the gate to the drain in 4H-SiC, respectively. The premise of the gain of the drain current is I GD Far greater than I SD And the gate potential is higher than the drain potential to ensure that the current between the gate and the drain flows from the gate to the drain, so that I D Exhibiting gain. The typical voltage applied in the present invention satisfies this condition (V GS =3v and V SD When=200v), gain performance is obtained.
FIG. 4 shows the source-drain voltage V SD The device was in bright state I before (control device) and after (invention) cyclic voltammetry annealing when changing from-20V to 20V D Is a comparison of the figures. Wherein the grid voltage is-6V, the wavelength of the light source is 375nm, and the power density is 10.2mW/cm 2 . As can be seen from the figure, at V SD At=20v, the bright current of the device after cyclic voltammetry annealing is 9.1x10 from the original (before cyclic voltammetry annealing) -8 A is increased to 1.5X10 -4 A, promote 1647 times. This is mainly due to the fact that after the bias voltage is increased circularly, annealing effect is generated on the source electrode and the drain electrode to form Ag nano particles, the Ag nano particles generate strong absorption to incident light by exciting the surface plasmon resonance effect to generate a large amount of hot carriers, and the Ag nano particles are formed on the V GS Is injected into the 4H-SiC interior and is effectively amplified by the transistor.
FIG. 5 shows V GS The bright state drain current I of the invention changes from-18V to 18V D Along with V SD Is a graph of the change relation of (1). Wherein the wavelength of the light source is 375nm, and the power density is 10.2mW/cm 2 . As can be seen from the figure, when V SD <When 0, all devices are in a cut-off state; when V is GS At different times, the turn-on voltage V of the device th Different. V (V) GS When the voltage is minus 6V, the bright current I D Optimally, at V SD When the bias voltage is=20v, 1.5x10 is reached -4 A。
FIG. 6 shows the response spectrum of the present invention in the wavelength range of 300nm to 900nm, where V GS ＝3V，V SD The light source is a xenon lamp light source, the monochromator emits monochromatic light, and the power density is mu W/cm 2 Horizontal. As can be seen from the graph, the invention can realize detection of incident light with a broad spectrum of 300-900nm, the response rate is over 100A/W, and particularly, the response rate is 4.2 multiplied by 10 under the wavelength of 360nm 5 A/W。
Fig. 7 shows a graph of the linear dynamic range performance of the present invention at 375nm wavelength. Wherein V is GS =3v and V SD =200v. As can be seen from the graph, the LDR of the device can reach 144dB, and the weakest detectable optical power density is 4.2nW/cm 2 This indicates that the present invention has excellent weak light detection capability.
FIG. 8 shows a transient current response of the present invention at 375nm wavelength, where V GS ＝3V，V SD =200v, light source wavelength 375nm, power density 10.2mW/cm 2 . From the graph, the invention can respond stably to the incident pulse optical signal, and the response speed is about 1.34s.
In summary, the invention discloses a very high gain 4H-SiC-based broad spectrum phototransistor by using a semiconductor deviceSquare Ag thin films for preparing source and drain electrodes are firstly deposited on a silicon surface of insulating 4H-SiC, an interface modification aluminum oxide layer and a grid electrode Ag layer are prepared on a carbon surface of the 4H-SiC, and a cyclic voltammetry annealing method is used for converting the square Ag thin film electrodes into Ag nano particle layers. The device realizes the wide-spectrum photoelectric detection performance with extremely high gain, and the response rate of the device is more than 1000A/W within the wide spectrum range of 300-900 nm. In addition, the response rate of the device reaches 10 under the ultraviolet band 5 A/W is more than. The device has very good weak light detection capability and can detect nW/cm 2 Horizontal dim light. The preparation method of the detector is simple and low in cost, the Ag nano particles formed by the cyclic voltammetry annealing method realize the efficient generation of wide-spectrum hot carrier signals by exciting the surface plasmon resonance effect, and the transistor type device enables the hot carriers to be successfully injected into 4H-SiC and realizes effective amplification. The present invention exhibits 1647-fold improvement in bright current at 375nm wavelength compared to an unannealed transistor control device.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. The ultra-high gain 4H-SiC-based broad spectrum phototransistor is characterized by comprising a 4H-SiC substrate (1), wherein a first Ag nano particle electrode (3) and a second Ag nano particle electrode (4) are arranged on a silicon surface of the 4H-SiC substrate (1), and a gap is arranged between the first Ag nano particle electrode (3) and the second Ag nano particle electrode (4); the first Ag nano particle electrode (3) and the second Ag nano particle electrode (4) are formed by randomly distributing Ag nano particles, and are prepared by acting an Ag film layer on a silicon surface of the prepared 4H-SiC substrate (1) through a cyclic voltammetry annealing method;
an aluminum oxide layer (2) is arranged on the carbon surface of the 4H-SiC substrate (1), and a grid Ag layer (5) is arranged on the aluminum oxide layer (2);
the first Ag nano particle electrode (3) and the second Ag nano particle electrode (4) are respectively used as a source electrode and a drain electrode, and the grid electrode Ag layer (5) is used as a grid electrode.
2. The extremely high gain 4H-SiC-based broad spectrum phototransistor as claimed in claim 1, wherein Ag nanoparticle diameter is 170nm±20nm, particle height is 100nm±20nm, and gap width between particles is 250nm±20nm in the first Ag nanoparticle electrode (3) and the second Ag nanoparticle electrode (4).
3. The extremely high gain 4H-SiC-based broad spectrum phototransistor as claimed in claim 1, wherein the first Ag nanoparticle electrode (3) and the second Ag nanoparticle electrode (4) are square with a side length of 230 μm±50 μm.
4. The very high gain 4H-SiC-based broad spectrum phototransistor as claimed in claim 1, wherein a gap width provided between the first Ag nanoparticle electrode (3) and the second Ag nanoparticle electrode (4) is: 30 μm.+ -. 10 μm.
5. The extremely high gain 4H-SiC-based broad spectrum phototransistor as claimed in claim 1, wherein the thickness of the 4H-SiC substrate (1) is 100 to 1000 μm, the thickness of the alumina layer (2) is 0.6nm ± 0.12nm, and the thickness of the gate Ag layer (5) is 100nm ± 20nm.
6. The method for manufacturing a very high gain 4H-SiC-based broad spectrum phototransistor as claimed in any one of claims 1 to 5, comprising the steps of:
s1, calibrating a carbon surface and a silicon surface of a silicon carbide substrate by an atomic force microscope, and cleaning and drying the silicon carbide substrate;
s2, depositing an aluminum oxide layer (2) on the carbon surface of the 4H-SiC substrate by utilizing an atomic layer deposition technology;
s3, arranging a mask on the silicon surface of the 4H-SiC substrate, and depositing an Ag film layer for preparing the first Ag nano-particle electrode (3) and the second Ag nano-particle electrode (4) on the silicon surface of the 4H-SiC substrate by utilizing a magnetron sputtering technology;
s4, preparing a grid Ag layer on one side of the alumina layer (2) by utilizing a magnetron sputtering technology;
s5, converting the Ag film layer prepared in the step S3 into a first Ag nano-particle electrode (3) and a second Ag nano-particle electrode (4) serving as source and drain electrodes by using a cyclic voltammetry annealing method.
7. The method for preparing the extremely high gain 4H-SiC-based broad spectrum phototransistor as claimed in claim 6, wherein the specific method in the step S5 is as follows:
s501, selecting two adjacent square Ag films in the Ag film layer as a source electrode and a drain electrode, and respectively connecting the source electrode, the drain electrode and a grid electrode with a power supply by adopting a common source electrode connection method;
s502, supplying-15V bias voltage to the source electrode, supplying voltage changing from-200V to the grid electrode, increasing the voltage to 2V, stabilizing each bias voltage for 2S, and circularly scanning the voltage for a plurality of times until the leakage current I D When the scanning is stopped during the surge, the effect of annealing the Ag film is realized, and the Ag nano particle layer serving as a source electrode and a drain electrode is formed.
8. The method for manufacturing a very high gain 4H-SiC-based broad spectrum phototransistor as claimed in claim 7, wherein in the step S501, the source is connected to the high level terminal of the first power source, the gate is connected to the high level terminal of the second power source, the drain is connected to the low level terminal of the first power source, and the low level terminals of the first power source and the second power source are commonly connected.
9. The method for manufacturing a very high gain 4H-SiC-based broad spectrum phototransistor according to claim 6, wherein the mask used in the step S3 is a copper mesh mask, and the geometric parameters of the copper mesh mask are 230 μm±50 μm on the side of the square grid, 30±10 μm on the side of the square grid, and 20-30 μm on the side of the square grid; the thickness of the sputtered Ag film layer is 15nm + -5 nm.
10. The method for preparing the extremely high gain 4H-SiC-based broad spectrum phototransistor as claimed in claim 6, wherein the specific method in the step S2 is as follows:
s201, opening circulating water of an atomic layer deposition system for refrigeration, inflating an opening cabin door, closely installing a trimethylaluminum and water vapor raw material bottle and a manual valve, closing the cabin door, setting the temperature of a deposition chamber to 150 ℃ through a computer, setting the flow of carrier gas to 30sccm after the temperature is stable, setting the type, time, flow, reaction time and cleaning time of each raw material, and controlling the deposition speed to be 0.06nm per cycle; setting the waiting time to be 1 minute, and starting a pre-deposition 40 cycle;
s202, after the pre-deposition is finished, inflating and opening a cabin door, loading the carbon surface loaded with the 4H-SiC substrate upwards in an atomic layer deposition chamber, setting proper circulation times, and starting formal deposition;
and S203, when the film thickness requirement is met, the deposition is automatically completed, and when the temperature of the deposition chamber is reduced to the room temperature, the sample is inflated and taken out.
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| JP2010056285A (en) * | 2008-08-28 | 2010-03-11 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide semiconductor device |
| KR101719763B1 (en) * | 2015-10-27 | 2017-03-27 | 광운대학교 산학협력단 | Method for controlling of growth of self-assembled Au nanoparticles on 4H-SiC |
| CN113013278A (en) * | 2021-03-12 | 2021-06-22 | 太原理工大学 | Silicon carbide-based full-spectrum response photoelectric detector and preparation method thereof |
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