CN114944439A - Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof - Google Patents

Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof Download PDF

Info

Publication number
CN114944439A
CN114944439A CN202210677947.0A CN202210677947A CN114944439A CN 114944439 A CN114944439 A CN 114944439A CN 202210677947 A CN202210677947 A CN 202210677947A CN 114944439 A CN114944439 A CN 114944439A
Authority
CN
China
Prior art keywords
sic
transistor
sic substrate
type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210677947.0A
Other languages
Chinese (zh)
Inventor
崔艳霞
樊亚萍
潘登
李国辉
李梦辉
梁强兵
田媛
许并社
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanxi Zhejiang University Institute Of New Materials And Chemical Industry
Taiyuan University of Technology
Original Assignee
Shanxi Zhejiang University Institute Of New Materials And Chemical Industry
Taiyuan University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanxi Zhejiang University Institute Of New Materials And Chemical Industry, Taiyuan University of Technology filed Critical Shanxi Zhejiang University Institute Of New Materials And Chemical Industry
Priority to CN202210677947.0A priority Critical patent/CN114944439A/en
Publication of CN114944439A publication Critical patent/CN114944439A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention belongs to the technical field of semiconductor photoelectric detectors, and particularly relates to a transistor type 4H-SiC ultraviolet photoelectric detector and a preparation method thereof. The preparation method is simple, the cost is low, and the finally obtained ultraviolet detector has extremely low dark current and has the advantages of bright spot current gain and high responsiveness.

Description

Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor photoelectric detectors, and particularly relates to a transistor type 4H-SiC ultraviolet photoelectric detector and a preparation method thereof.
Background
Photoelectric detectors are widely used in national life and military. Photodetectors based on first-generation and second-generation semiconductor materials such as silicon (Si), III-group arsenide, etc. have been developed very well and have been widely used in the ultraviolet, visible, and infrared light bands. Third generation wide band gap semiconductor materials, represented by silicon carbide (SiC) and gallium nitride, have the characteristics of high mobility, good stability, good thermal conductivity and the like, and can be used for developing high-performance ultraviolet photodetectors. SiC exhibits a variety of crystal configurations, 3C-SiC, 4H-SiC and 6H-SiC being common. The 4H-SiC has higher carrier mobility, and the wafer process is mature and has more advantages in practical application. Since the first 6H-SiC uv photodiode was first prepared by glaslow et al in 1988, researchers have conducted a series of studies around SiC uv detectors. The earliest occurrence was a metal-semiconductor-metal (MSM) structure photodetector and a schottky barrier structure photodetector. Subsequently, pn or p-i-n structure photodetectors and avalanche photodiode type photodetectors capable of single photon detection have been widely explored. At present, 4H-SiC-based ultraviolet detector products appear in the market, and are mainly used for measuring ultraviolet radiation dose, fire early warning and sunlight radiation index in the industrial field.
Unfortunately, the 4H-SiC-based ultraviolet detectors are two-terminal devices, and the response rate is generally low. While the SiC transistor type photodetector having a three-terminal structure has a higher responsivity than a two-terminal device and has attracted attention in recent years. Cloud and white et al simulation of Chinese academy of sciences in 2016A4H-SiC-based ultraviolet photoelectric detector based on a bipolar transistor structure is disclosed, and the gain of the device under 5V bias is 10 5 The above (literature: Materials Science Forum2016,5,1036). In 2019, Benedetto et al at the university of Salaino, Italy experimentally prepared a 4H-SiC-based transistor type ultraviolet photodetector, when the source-drain voltage was-0.5V, the dark current of the device was as low as 0.62pA, and within the band range of 230nm-370nm, the gain of the device reached 10 5 Level (IEEE Transactions on Electronic Devices 2020,67(1), 154-. Through investigation, all reported transistor type 4H-SiC-based ultraviolet detectors comprise doped 4H-SiC functional layers, but the doped layers are obtained through processes such as epitaxy or ion implantation, the manufacturing process is complex, and the device cost is high. Therefore, the search for a low-cost and high-gain transistor type 4H-SiC ultraviolet photoelectric detector is of great significance.
Disclosure of Invention
The invention overcomes the defects of the prior art, and the required technical problems are as follows: the transistor type 4H-SiC ultraviolet photoelectric detector and the preparation method thereof have the advantages of simple process and low cost, and the detection performance of high-gain ultraviolet signals is realized.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a transistor type 4H-SiC ultraviolet photoelectric detector comprises a 4H-SiC substrate, wherein a semi-transparent source electrode and a semi-transparent drain electrode are arranged on a silicon surface of the 4H-SiC substrate, and a non-transparent gate electrode is arranged on a carbon surface of the 4H-SiC substrate.
The width of the gap between the source electrode and the drain electrode is 30 μm +/-10 μm, and the thickness of the source electrode and the thickness of the drain electrode are both 15nm +/-5 nm.
The source electrode and the drain electrode are parallel square metal electrodes, and the side length of each square metal electrode is 230 micrometers +/-50 micrometers.
The 4H-SiC substrate is semi-insulating with a resistivity between 1e13ohm cm and 1e15ohm cm.
The thickness of the 4H-SiC substrate is 100-1000 mu m, and the thickness of the gate electrode is 100nm +/-20 nm.
The gate electrode, the source electrode and the drain electrode are made of the same material and are made of one of silver, aluminum or gold.
In addition, the invention also provides a preparation method of the transistor type 4H-SiC ultraviolet photoelectric detector, which comprises the following steps:
s1, calibrating a carbon surface and a silicon surface of the 4H-SiC substrate through an atomic force microscope, and cleaning and drying the 4H-SiC substrate;
s2, preparing a source electrode and a drain electrode on the silicon surface of the cleaned 4H-SiC substrate by adopting a magnetron sputtering method;
and S3, preparing a gate electrode on the carbon surface of the 4H-SiC substrate by adopting a magnetron sputtering method.
In the step S2, a copper mesh mask is loaded on the silicon surface of the 4H-SiC substrate, and then magnetron sputtering is carried out to prepare a source electrode and a drain electrode, wherein the geometric parameters of the copper mesh mask are that the side length of a square grid is 230 micrometers +/-50 micrometers, the rib width is 30 +/-10 micrometers, and the thickness is 20-30 micrometers.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a transistor type 4H-SiC ultraviolet photoelectric detector, which is characterized in that a source electrode and a drain electrode are prepared on a silicon surface of a semi-insulating type 4H-SiC substrate, and a gate electrode is prepared on a carbon surface of the semi-insulating type 4H-SiC substrate, so that the current signal is effectively amplified under the illumination condition, the bright spot current of the detector is high, and the detection performance is good. The detector can realize the regulation and control of the transistor characteristics by changing illumination and grid voltage. In the dark state, the drain current (I) of the invention D ) Very low, reaching a level of 10 fA. Under the irradiation of ultraviolet light, a large number of photogenerated carriers are generated inside the 4H-SiC, so that the conductivity of the 4H-SiC changes. Further, the current of each electrode terminal of the transistor meets kirchhoff law, I D By a current (I) between the source and drain SD ) And the current (I) between the gate and the source GS ) Two parts are composed of GS Is far greater than I SD The photocurrent is thus significantly amplified compared to a two-terminal device. Under illumination, I D With voltage (V) between source and drain SD ) Is changed to have one-way conductivity when V is changed SD >V th At this time, the transistor is turned on. With V GS When changing from-9V to 9V, V SD Turn-on voltage (V) th ) Changing from-6.4V to 9.6V. At a determined V SD Lower, V GS Smaller, bright state I D The larger. At a wavelength of 375nm (10.2 mW/cm) 2 Optical power density) when irradiated with light, when V GS is-9V, V SD At 20V, the bright current I D 900nA, compared with the bright current (2nA) of a two-terminal device under the same condition, the invention obtains a gain effect of 450 times.
Drawings
Fig. 1 is a schematic structural diagram of a transistor-type 4H-SiC ultraviolet photodetector according to an embodiment of the present invention, in which: 1-4H-SiC substrate, 2-source electrode, 3-drain electrode and 4-gate electrode.
Fig. 2 is a top plan microscopic view of a source electrode and a drain electrode of the transistor-type 4H-SiC ultraviolet photodetector according to the present invention.
FIG. 3 shows a device V of a transistor-type 4H-SiC UV photodetector according to the present invention GS is-9V, V SD 20V.
FIG. 4 shows a transistor-type 4H-SiC UV photodetector provided by the present invention at V GS Dark state I when changing from-9V to 9V D Following V SD A graph of the variation relationship of (c).
FIG. 5 shows a transistor-type 4H-SiC UV photodetector at V according to the present invention GS Change from-9V to 9V under light I D Following V SD The variation relationship diagram of (1), the lighting condition: wavelength 375nm and power density 10.2mW/cm 2 。
Fig. 6 shows dark current and bright current of devices at two ends of a transistor-type 4H-SiC ultraviolet photodetector provided by the present invention when a gate is in a suspended state, and the illumination conditions during bright current testing: wavelength 375nm and power density 10.2mW/cm 2 。
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
As shown in fig. 1, a transistor-type 4H-SiC ultraviolet photodetector according to a first embodiment of the present invention includes a 4H-SiC substrate 1, a source electrode 2, a drain electrode 3, and a gate electrode 4. The source electrode and the drain electrode are positioned on one side of the silicon surface of the 4H-SiC and are semitransparent electrodes. The gate electrode is positioned on one side of the carbon surface of the 4H-SiC and is a light-tight electrode. The source electrode 2 is grounded, the drain electrode 3 and the grid 4 are respectively connected with one of two power supplies which are commonly grounded, and a bright current signal is output between the drain electrode 3 and the source electrode 2. Specifically, in the present embodiment, the drain electrode 3 and the gate electrode 4 may be respectively connected to the anodes of two channels of the B2902 power supply.
Specifically, as shown in fig. 2, in this embodiment, after a copper mesh mask is loaded on a silicon surface of 4H-SiC, a magnetron sputtering technology is used to prepare a plurality of square metal electrodes that can be used as a source electrode and a drain electrode respectively, and any two adjacent square metal electrodes can be used as a source electrode and a drain electrode respectively. And no mask is loaded when the bottom grid is manufactured. In the specific test process, a common source connection method as shown in fig. 3 is adopted.
Specifically, in this embodiment, the source electrode and the drain electrode are square metal electrodes, the side length of each metal electrode is 230 μm ± 50 μm, the gap width between the source electrode and the drain electrode is 30 μm ± 10 μm, the thickness of each of the source electrode and the drain electrode is 15nm ± 5nm, and the source electrode and the drain electrode are semi-transparent.
Preferably, in this embodiment, the source electrode and the drain electrode are square metal electrodes, the side length of each metal electrode is 230 μm ± 5 μm, the gap width between the source electrode and the drain electrode is 30 μm ± 1 μm, the thickness of each of the source electrode and the drain electrode is 15nm ± 1nm, and the source electrode and the drain electrode are semi-transparent.
Further, in the present embodiment, the 4H — SiC substrate is a semi-insulating type, is a weak n-type, and has a resistivity of 1e13ohm cm to 1e15ohm cm.
Preferably, in the embodiment, the 4H-SiC substrate is semi-insulating type and weak n type, and the resistivity of the 4H-SiC substrate is between 5e13ohm cm and 5e14 ohm cm.
Furthermore, in the embodiment, the thickness of the 4H-SiC substrate is 100-1000 μm, and the thickness of the gate electrode is 100nm +/-20 nm.
Preferably, in the embodiment, the thickness of the 4H-SiC substrate is 500 μm +/-20 μm, and the thickness of the gate electrode is 100nm +/-5 nm.
In this embodiment, the gate electrode, the source electrode, and the drain electrode are made of the same material, and are made of silver (Ag), aluminum (Al), or gold (Au).
Preferably, in this embodiment, the gate electrode, the source electrode, and the drain electrode are made of the same material, and are all silver (Ag).
The embodiment of the invention provides a transistor type 4H-SiC ultraviolet photoelectric detector, which is characterized in that a source electrode and a drain electrode are prepared on a silicon surface of a semi-insulating type 4H-SiC substrate, and a gate electrode is prepared on a carbon surface of the semi-insulating type 4H-SiC substrate, so that current signals are effectively amplified under the illumination condition. The invention realizes the regulation and control of the transistor characteristics by changing illumination and grid voltage. Drain current (I) of the device in dark state D ) Extremely low, reaching the 10fA level, and further, the photocurrent is significantly amplified compared to a two-terminal device with a suspended gate. Under illumination, drain current I D Dependent on the voltage (V) between the source and drain SD ) Is changed to have one-way conductivity when V is changed SD >V th At this time, the transistor is turned on. When V is GS When it is-9V, V SD Turn-on voltage (V) th ) It was-6.4V. When the invention is placed at a wavelength of 375nm (10.2 mW/cm) 2 Optical power density) under light irradiation, and V GS is-9V, V SD At 20V, the bright current is 900nA, and compared with the bright current (2nA) of a two-end device with a suspended grid under the same condition, the gain effect of 450 times is obtained.
Example two
The second embodiment of the invention provides a preparation method of a transistor type 4H-SiC ultraviolet photoelectric detector, and the second embodiment of the invention uses the following materials:
4H-SiC substrate, Ag target, deionized water, nitric acid, liquid detergent, deionized water, acetone, absolute ethyl alcohol and copper mesh mask. The combined dosage and screening criteria were as follows:
4H-SiC substrate: semi-insulating type, which is weak n-type, and has a resistivity of 1e14 ohm cm, an area of 20mm × 20mm, and a thickness of 500 μm;
ag target material: solid, copper backplane binding, 99.999% purity;
deionized water: h 2 O 8000mL±50mL；
Nitric acid: HNO 3 ，68％
Liquid detergent: 2 plus or minus 0.5 mL;
acetone: CH (CH) 3 COCH 3 250mL±5mL；
Anhydrous ethanol: c 2 H 5 OH 500mL±5mL；
Masking the copper mesh: copper; the square grid of the net shape has the side length of 230 mu m, the rib width of 30 mu m and the thickness of 20-30 mu m.
The preparation method of the transistor-type 4H-SiC ultraviolet photodetector provided by the embodiment specifically includes the following steps:
s1, calibrating a carbon surface and a silicon surface of the silicon carbide substrate through an atomic force microscope, and cleaning and drying the silicon carbide substrate;
in step S1, the method for cleaning the 4H-SiC substrate includes:
s101, putting a 4H-SiC substrate into a polytetrafluoroethylene beaker, adding concentrated nitric acid into the polytetrafluoroethylene beaker, covering the opening of the beaker with aluminum foil paper, ultrasonically soaking for more than 20min, taking out the 4H-SiC substrate, washing with clear water, and removing residual solution;
s102, coating detergent on the surface of the slice, repeatedly rubbing and cleaning the 4H-SiC substrate under water flow until the 4H-SiC substrate is washed by clean water, and forming a uniform water film on the surface of the 4H-SiC substrate.
S103, vertically placing the scrubbed 4H-SiC substrate on a beaker frame in a glass beaker, and sequentially adding deionized water, acetone, absolute ethyl alcohol and isopropanol into the beaker for ultrasonic treatment for 15 min. Finally, the cleaned 4H-SiC substrate was stored in isopropanol for use.
S2, preparing a source electrode and a drain electrode on one side of the cleaned 4H-SiC substrate silicon surface by adopting a magnetron sputtering method; in the step S2, the specific method includes:
s201, mounting the Ag target on a target head of a magnetron sputtering coating machine.
S202, attaching a copper mesh mask plate to one side of the silicon surface of the 4H-SiC substrate, then loading the copper mesh mask plate on a sample tray of a magnetron sputtering coating machine, wherein one side of the mask plate faces downwards, and adjusting the sample tray to enable the 4H-SiC substrate to be located right above the Ag target.
S203, closing the magnetron sputtering cabin door, opening and zeroing a vacuum gauge, opening a mechanical pump and a pre-pumping valve on a display screen, closing the pre-pumping valve when the pressure is reduced to 30Pa, opening a gate valve and a molecular pump, and enabling the pressure of the cabin body to reach 10 -4 And when Pa, opening an argon ionization valve and an argon channel power supply.
S204, opening an argon magnetic control valve, a mechanical valve and a flowmeter in sequence, selecting proper argon flow, and then adjusting a gate valve of the molecular pump to maintain the pressure of the cavity at 2 Pa.
S205, turning on a sputtering power supply, adjusting the power required by sputtering, and after starting, further adjusting the pressure through a gate valve to enable the sputtering rate to meet the film forming requirement. The pre-sputtering is carried out for 10 minutes, and then the formal sputtering is carried out. When the required film thickness is reached, the large baffle is closed, then the radio frequency sputtering power supply is closed, the sample is taken out from the film coating chamber, and the metal mask is dismounted.
S3, preparing a gate electrode on one side of the carbon surface of the 4H-SiC substrate plated with the source electrode and the drain electrode by adopting a magnetron sputtering method, wherein the specific method is as follows:
s301, mounting the Ag target on a target head of a magnetron sputtering coating machine.
S302, turning over the prepared samples of the source electrode and the drain electrode, enabling one side of the carbon surface of the 4H-SiC substrate to face downwards, loading the samples on a sample tray of a magnetron sputtering film plating machine, and adjusting the sample tray without loading a mask plate to enable the 4H-SiC substrate to be located right above the Ag target.
S303, closing the magnetron sputtering cabin door, opening and zeroing a vacuum gauge, opening a mechanical pump and a pre-pumping valve on a display screen, closing the pre-pumping valve when the pressure is reduced to 30Pa, opening a gate valve and a molecular pump, and enabling the pressure of the cabin body to reach 10 DEG C -4 At Pa, is turned onAn argon ionization valve and an argon channel power supply.
S304, opening an argon magnetic control valve, a mechanical valve and a flowmeter in sequence, selecting proper argon flow, and then adjusting a gate valve of the molecular pump to maintain the pressure of the cavity at 2 Pa.
S305, turning on a sputtering power supply, adjusting the power required by sputtering, and after starting, further adjusting the pressure through a gate valve to enable the sputtering rate to meet the film forming requirement. The pre-sputtering is carried out for 10 minutes, and then the formal sputtering is carried out. When the required film thickness is reached, the large baffle is closed, then the radio frequency sputtering power supply is closed, the sample is taken out from the film coating chamber, and the sample is collected, namely the transistor type 4H-SiC ultraviolet photoelectric detector.
Detection, analysis and characterization: the performance of the prepared transistor type 4H-SiC ultraviolet photoelectric detector is detected, analyzed and characterized.
Measuring a current-voltage characteristic curve of the transistor type 4H-SiC ultraviolet photoelectric detector in a dark state by adopting a high-precision digital source meter agent B1500; the Thorlabs 375nm LED is used as a light source, and an Agilent B2902 is used for characterizing the bright-state current-voltage characteristic curve of the transistor type 4H-SiC ultraviolet photoelectric detector. During transistor testing, the circuit connection adopts a common source connection method, as shown in fig. 3. And measuring current-voltage characteristic curves of devices at two ends of the suspended grid electrode in a dark state and a bright state by adopting a high-precision digital source meter agent B1500.
And (4) conclusion: the source-drain current (I) of the transistor type 4H-SiC ultraviolet photoelectric detector (wherein the source and drain electrodes are made of Ag with the thickness of 15nm, and the gate electrode is made of Ag with the thickness of 100nm under different gate voltages) is analyzed SD ) Along with source-drain voltage (V) SD ) The variation of (2). The principle of operation of the transistor device is shown in figure 3. According to kirchhoff's law, source current I S ＝I SD +I SG While the drain current I D ＝I SD +I GD In which I SD 、I SG 、I GD The current flowing from the source to the drain, the current flowing from the source to the gate, and the current flowing from the gate to the drain in 4H-SiC, respectively. When the grid electrode is suspended, a two-terminal device (contrast device) is formed D ＝I S ＝I SD . Further, the present inventionAt V SD ＝20V、V GS when-9V, the source is grounded, the drain potential is-20V, the gate potential is-9V, and the current flow between the gate and drain is from the gate to the drain, I D A gain is exhibited. When V is SD Increase so that I GD Is much larger than I SD While, of three terminal devices D I relative to two-terminal device D A very high gain is exhibited. If the bias voltage applied to the gate and drain electrodes changes the current flowing direction between the gate and drain, I GD Negative, i.e. current flows from the drain to the gate, causing the transistor to turn off. The above is the basic working principle that the transistor device of the present invention can realize current amplification.
FIG. 4 shows the equation when V GS When changing from-9V to 9V, the invention is in the dark state I D Following V SD A graph of the variation relationship of (c). As can be seen, the drain current (I) is shown under various bias conditions D ) Are very low, reaching a level of 10 fA. The concentration of intrinsic 4H-SiC carriers is extremely low, the Fermi level of semi-insulating 4H-SiC is clamped by a surface state, the height of a potential barrier formed after metal is contacted with the metal is irrelevant to the work function of the metal, the height of the potential barrier for injecting the carriers is far higher than the energy of thermally-excited carriers, and the injection of the carriers in an external circuit can be effectively inhibited. Under the combined action of the two mechanisms, the transistor type 4H-SiC ultraviolet photoelectric detector has extremely low dark current. For the above reasons, the dark-state current (indicated by the circled line in fig. 6) of the two-terminal device is also at an extremely low level.
FIG. 5 shows the equation when V GS When changing from-9V to 9V, the invention has I under the illumination condition D Following V SD A graph of the variation relationship of (c). As can be seen from the figure, under illumination, I D Dependent on the voltage (V) between the source and drain SD ) Is changed to have one-way conductivity when V is changed SD >V th At this time, the transistor is turned on. With V GS When changing from-9V to 9V, V SD Turn-on voltage (V) th ) Changing from-6.4V to 9.6V. At a determined V SD Lower, V GS Smaller, bright state I D The larger. At a wavelength of 375nm (10.2 mW/cm) 2 Optical power density) under irradiation of light, whenV GS is-9V, V SD At 20V, the bright current I of the invention D 900 nA. The generation of carriers under illumination to induce the change of the 4H-SiC conductance characteristics is the root cause of the 4H-SiC photoelectric detector which can respond to ultraviolet light.
Further, in the present invention, I SD Can only collect the photo-generated carriers between the source and the drain, because the side lengths of the source and the drain are very short (230 μm), the distance between the source and the drain is very narrow (30 μm), and the distance corresponds to a very small photosensitive area, the generated bright current is very low, and corresponds to the bright current curve of the two-terminal device when the grid is suspended as shown by the square frame line in fig. 6, specifically, V SD When 20V, I SD Only 2 nA. And the current I between the source and the drain GD Due to the longitudinal transport, a larger area of photogenerated carriers can be collected, thus I GD Is much greater than I SD Then I of three terminal device D A very high gain is exhibited relative to a two terminal device. When V is GS is-9V, V SD At 20V, the bright current I of the invention D A gain of 450 times is obtained compared to a two-terminal device.
In summary, the invention discloses a transistor type 4H-SiC ultraviolet photoelectric detector, which is characterized in that a source electrode and a drain electrode are prepared on a silicon surface of semi-insulating type 4H-SiC, and a gate electrode is prepared on a carbon surface of the 4H-SiC, so that the preparation method of the detector is simple, the cost is low, and finally the ultraviolet photoelectric detector with the 4H-SiC ultraviolet photoelectric detection performance, which has extremely low dark current and 450 times of gain effect compared with devices at two ends, is obtained.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (8)

1. The utility model provides a transistor-type 4H-SiC ultraviolet photoelectric detector which characterized in that: the light-transmitting and light-transmitting solar cell comprises a 4H-SiC substrate (1), wherein a semi-light-transmitting source electrode (2) and a semi-light-transmitting drain electrode (3) are arranged on a silicon surface of the 4H-SiC substrate (1), and a light-transmitting gate electrode (4) is arranged on a carbon surface of the 4H-SiC substrate (1).
2. The transistor-type 4H-SiC UV photodetector of claim 1, wherein the gap width between the source electrode (2) and the drain electrode (3) is 30 μm ± 10 μm, and the thickness of the source electrode (2) and the drain electrode (3) are both 15nm ± 5 nm.
3. The transistor-type 4H-SiC UV photodetector of claim 1, wherein the source electrode (2) and the drain electrode (3) are parallel square metal electrodes with a side length of 230 μm ± 50 μm.
4. A transistor-type 4H-SiC uv photodetector according to claim 1, characterized in that the 4H-SiC substrate (1) is of semi-insulating type with a resistivity comprised between 1e13 ohm-cm and 1e15 ohm-cm.
5. The transistor-type 4H-SiC ultraviolet photodetector according to claim 1, wherein the thickness of the 4H-SiC substrate (1) is 100-1000 μm, and the thickness of the gate electrode (4) is 100nm +/-20 nm.
6. The transistor-type 4H-SiC UV photodetector of claim 1, wherein the gate electrode, the source electrode, and the drain electrode are made of the same material and are made of one of silver, aluminum, or gold.
7. The method for manufacturing the transistor-type 4H-SiC ultraviolet photoelectric detector according to claim 1, comprising the following steps:
s1, calibrating a carbon surface and a silicon surface of the 4H-SiC substrate through an atomic force microscope, and cleaning and drying the 4H-SiC substrate;
s2, preparing a source electrode and a drain electrode on the silicon surface of the cleaned 4H-SiC substrate by adopting a magnetron sputtering method;
and S3, preparing a gate electrode on the carbon surface of the 4H-SiC substrate by adopting a magnetron sputtering method.
8. The method according to claim 7, wherein in step S2, a copper mesh mask is loaded on the silicon surface of the 4H-SiC substrate, and then magnetron sputtering is performed to prepare the source electrode and the drain electrode, wherein the geometric parameters of the copper mesh mask include that the side length of the square grid is 230 μm ± 50 μm, the rib width is 30 ± 10 μm, and the thickness is 20-30 μm.
CN202210677947.0A 2022-06-16 2022-06-16 Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof Pending CN114944439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210677947.0A CN114944439A (en) 2022-06-16 2022-06-16 Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210677947.0A CN114944439A (en) 2022-06-16 2022-06-16 Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof

Publications (1)

Publication Number Publication Date
CN114944439A true CN114944439A (en) 2022-08-26

Family

ID=82910663

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210677947.0A Pending CN114944439A (en) 2022-06-16 2022-06-16 Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof

Country Status (1)

Country Link
CN (1) CN114944439A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117238929A (en) * 2023-11-10 2023-12-15 太原理工大学 Low-power-consumption full-band optical communication chip and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1413360A (en) * 1999-12-21 2003-04-23 住友电气工业株式会社 Horizontal junction field-effect transistor
JP4918626B2 (en) * 2009-04-30 2012-04-18 パナソニック株式会社 Semiconductor element, semiconductor device, and power converter
CN108231953A (en) * 2017-12-29 2018-06-29 厦门大学 A kind of preparation method of MSM structures 4H-SiC UV photodetectors
CN114530506A (en) * 2021-11-02 2022-05-24 浙江芯科半导体有限公司 Gate dielectric thin film transistor for SiC-based field effect transistor and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1413360A (en) * 1999-12-21 2003-04-23 住友电气工业株式会社 Horizontal junction field-effect transistor
JP4918626B2 (en) * 2009-04-30 2012-04-18 パナソニック株式会社 Semiconductor element, semiconductor device, and power converter
CN108231953A (en) * 2017-12-29 2018-06-29 厦门大学 A kind of preparation method of MSM structures 4H-SiC UV photodetectors
CN114530506A (en) * 2021-11-02 2022-05-24 浙江芯科半导体有限公司 Gate dielectric thin film transistor for SiC-based field effect transistor and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
严贤雍: "金属-半导体-金属型4H-SiC热电子光电探测器", 中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑, vol. 2022, no. 01, pages 23 - 26 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117238929A (en) * 2023-11-10 2023-12-15 太原理工大学 Low-power-consumption full-band optical communication chip and preparation method thereof
CN117238929B (en) * 2023-11-10 2024-01-23 太原理工大学 Low-power-consumption full-band optical communication chip and preparation method thereof

Similar Documents

Publication Publication Date Title
Chander et al. Time evolution to CdCl2 treatment on Cd-based solar cell devices fabricated by vapor evaporation
He et al. Study of the photoconductive ZnO UV detector based on the electrically floated nanowire array
Kusuma et al. A review on electrical characterization techniques performed to study the device performance of quantum dot sensitized solar cells
CN110444618B (en) Solar blind ultraviolet detector based on amorphous gallium oxide film and preparation method thereof
US20220052218A1 (en) Silicon carbide-based full-spectrum-responsive photodetector and method for producing same
CN107507876A (en) A kind of β Ga2O3Base solar blind UV electric explorer array and preparation method thereof
Yakuphanoglu et al. Novel organic doped inorganic photosensors
CN100587980C (en) Making method for ultraviolet detector with common plane grid structure
CN114944439A (en) Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof
CN102142482A (en) Method for preparing Schottky contact ZnO nano array ultraviolet detection device
Wang et al. High-performance 4H-SiC Schottky photodiode with semitransparent grid-electrode for EUV detection
Yin et al. Multifunctional optoelectronic device based on CuO/ZnO heterojunction structure
Sun et al. Research on piezo-phototronic effect in ZnO/AZO heterojunction flexible ultraviolet photodetectors
CN109545883B (en) Low dark current mesa type avalanche single photon detector and preparation method thereof
Zhao et al. Study of a neutron-resistant p+-Si/n-ZnO photodetector with avalanching gain
Divigalpitiya Temperature dependence of the photovoltaic characteristics of silicon MIS solar cells
CN115000229A (en) Dark current suppression semi-insulating 4H-SiC-based ultraviolet photoelectric detector and preparation method thereof
Lin et al. Nanoscale-Thick a-Ga2O3 Films on GaN for High-Performance Self-Powered Ultraviolet Photodetectors
CN115000207B (en) 4H-SiC narrow-band ultraviolet photoelectric detector
Rath Electrical characterization of HIT type solar cells
Zhao et al. Pyramidal island for enhance response in ZnO/Cu2O heterojunction self-powered photodetector
Zhang et al. Conductive layer thickness enhanced lateral photovoltaic performances in the Cu (In, Ga) Se 2-based multilayer heterostructure
CN115000197B (en) Extremely high gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof
CN109037372B (en) Multiband photoresponse device based on molybdenum oxide micron band/p-type Si and preparation method thereof
CN112117346A (en) Micron line array, preparation method thereof, avalanche ultraviolet detector prepared by micron line array and avalanche ultraviolet detector system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination