CN115000197A - Extremely-high-gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof - Google Patents
Extremely-high-gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof Download PDFInfo
- Publication number
- CN115000197A CN115000197A CN202210686413.4A CN202210686413A CN115000197A CN 115000197 A CN115000197 A CN 115000197A CN 202210686413 A CN202210686413 A CN 202210686413A CN 115000197 A CN115000197 A CN 115000197A
- Authority
- CN
- China
- Prior art keywords
- electrode
- sic
- nano
- layer
- particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000002105 nanoparticle Substances 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 109
- 238000000137 annealing Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 21
- 238000002484 cyclic voltammetry Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 125000004122 cyclic group Chemical group 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 238000005057 refrigeration Methods 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000001514 detection method Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 56
- 230000004044 response Effects 0.000 description 19
- 238000001228 spectrum Methods 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 238000009210 therapy by ultrasound Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of semiconductor photoelectric detectors, and discloses a very high gain 4H-SiC-based broadband phototransistor, which comprises a 4H-SiC substrate, wherein a first Ag nanoparticle electrode and a second Ag nanoparticle electrode are arranged on the silicon surface of the 4H-SiC substrate, and a gap is arranged between the first Ag nanoparticle electrode and the second Ag nanoparticle electrode; the first Ag nano-particle electrode and the second Ag nano-particle electrode are formed by randomly distributing Ag nano-particles; an aluminum oxide layer is arranged on the carbon surface of the 4H-SiC substrate, and a grid Ag layer is arranged on the aluminum oxide layer; the first Ag nanometer particle electrode and the second Ag nanometer particle electrode are respectively used as a source electrode and a drain electrode, and the grid electrode Ag layer is used as a grid electrode. The invention has the advantages of excellent detection performance, simple preparation process and low cost.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric detectors, and particularly relates to an extremely high-gain 4H-SiC-based broadband phototransistor and a preparation method thereof.
Background
The photoelectric detector is widely applied to national life and military. The transistor type photoelectric detector has the advantages of high input resistance, low noise, large dynamic range, low power consumption, wide safe working area, easiness in integration and the like, can realize high current output gain under low bias voltage, is expected to be interconnected with a read-out circuit chip to realize the research and development of an imaging device, and has good application prospect in the fields of imaging and the like.
Photoelectric detectors made of traditional semiconductor materials such as silicon, germanium, III-group arsenide, lead sulfide and the like are widely applied to the fields of optical fiber communication, laser ranging, industrial control, missile guidance, infrared sensing and the like. However, these devices cannot operate in extreme environments due to the characteristics of the semiconductor materials. Compared with the traditional semiconductor materials, the wide-bandgap semiconductor material has the advantages of large bandgap width, high saturated electron speed, high electron mobility, small dielectric constant, good conductivity and the like, so that the power device based on the wide-bandgap semiconductor material has the characteristics of high critical breakdown field intensity, small parasitic capacitance, high working temperature and the like. Compared with other third-generation wide bandgap semiconductor materials, the silicon carbide (SiC) material has the earliest research initiation, the most mature technology, and has obvious advantages in light absorption, defect state density and the like. SiC exhibits a variety of crystal configurations, 3C-SiC, 4H-SiC and 6H-SiC being common. Among them, 4H-SiC has higher carrier mobility and is more advantageous in practical applications. Common 4H-SiC-based photodetectors are of a two-end type, mainly comprise metal-semiconductor-metal (MSM) structure photodetectors, Schottky barrier structure photodetectors, pn phototubes, p-i-n phototubes, avalanche diodes and the like, and the response rates of the photodetectors are generally low. On the other hand, a 4H-SiC transistor type photodetector having a three-terminal structure can realize a high current gain, and has attracted attention in recent years. Through investigation, all reported transistor type 4H-SiC-based ultraviolet detectors comprise doped 4H-SiC functional layers, but the doped layers are obtained through processes such as epitaxy or ion implantation, the manufacturing process is complex, and the device cost is high. Moreover, all the 4H-SiC based phototransistors reported to respond only to ultraviolet light and hardly respond to visible and near infrared light. Therefore, the 4H-SiC-based wide-spectrum phototransistor with low cost and high gain and the preparation method thereof are of great significance.
Disclosure of Invention
The invention overcomes the defects of the prior art, and solves the technical problems that: the extremely high gain 4H-SiC-based broadband phototransistor and the preparation method thereof are provided to realize high-performance detection of photoelectric signals.
In order to solve the technical problems, the invention adopts the technical scheme that: a very high gain 4H-SiC based broad spectrum phototransistor comprises a 4H-SiC substrate, wherein a first Ag nano particle electrode and a second Ag nano particle electrode are arranged on the silicon surface of the 4H-SiC substrate, and a gap is arranged between the first Ag nano particle electrode and the second Ag nano particle electrode; the first Ag nano-particle electrode and the second Ag nano-particle electrode are formed by randomly distributing Ag nano-particles and are prepared by acting an Ag thin film layer on the silicon surface of a 4H-SiC substrate through a cyclic voltammetry annealing method;
an aluminum oxide layer is arranged on the carbon surface of the 4H-SiC substrate, and a grid Ag layer is arranged on the aluminum oxide layer;
the first Ag nano-particle electrode and the second Ag nano-particle electrode are respectively used as a source electrode and a drain electrode, and the grid electrode Ag layer is used as a grid electrode.
In the first Ag nano-particle electrode and the second Ag nano-particle electrode, the diameter of Ag nano-particles is 170nm +/-20 nm, the height of the particles is 100nm +/-20 nm, and the width of gaps among the particles is 250nm +/-20 nm;
the first Ag nano-particle electrode and the second Ag nano-particle electrode are square, and the side length is 230 microns +/-50 microns.
The gap width between the first Ag nanoparticle electrode and the second Ag nanoparticle electrode is as follows: 30 μm. + -. 10 μm.
The thickness of the 4H-SiC substrate is 100-1000 mu m, the thickness of the aluminum oxide layer is 0.6nm +/-0.12 nm, and the thickness of the grid Ag layer is 100nm +/-20 nm.
In addition, the invention also provides a preparation method of the extremely-high-gain 4H-SiC-based broad spectrum phototransistor, which comprises the following steps:
s1, calibrating a carbon surface and a silicon surface of the silicon carbide substrate through an atomic force microscope, and cleaning and drying the silicon carbide substrate;
s2, depositing an aluminum oxide layer on the carbon surface of the 4H-SiC substrate by utilizing an atomic layer deposition technology;
s3, arranging a mask on the silicon surface of the 4H-SiC substrate, and depositing Ag thin film layers for preparing a first Ag nano-particle electrode and a second Ag nano-particle electrode on the silicon surface of the 4H-SiC substrate by utilizing a magnetron sputtering technology;
s4, preparing a grid Ag layer on one side of the alumina layer by utilizing a magnetron sputtering technology;
and S5, converting the Ag thin film layer prepared in the step S3 into a first Ag nano-particle electrode and a second Ag nano-particle electrode which are used as source and drain electrodes by using a cyclic voltammetry annealing method.
The specific method in step S5 is as follows:
s501, selecting two adjacent square Ag thin films as a source electrode and a drain electrode from the Ag thin films, and respectively connecting the source electrode, the drain electrode and the grid electrode with a power supply by adopting a common source connection method;
s502, supplying a-15V bias voltage to the source electrode, supplying a voltage which changes from-200V to the grid electrode, wherein the voltage amplification is 2V, each bias voltage is stable for 2S, and the voltage is cyclically scanned for multiple times until the leakage current I D And when the current is increased rapidly, the scanning is stopped, the annealing effect of the Ag film is realized, and an Ag nano particle layer used as a source electrode and a drain electrode is formed.
In step S501, the source is connected to the high level end of the first power supply, the gate is connected to the high level end of the second power supply, the drain is connected to the low level end of the first power supply, and the low level ends of the first power supply and the second power supply are connected to the same ground.
The mask used in the step S3 is a copper mesh mask, the geometric parameters of the copper mesh mask are that the side length of a square grid is 230 micrometers +/-50 micrometers, the rib width is 30 +/-10 micrometers, and the thickness is 20-30 micrometers; the thickness of the sputtered Ag film layer is 15nm +/-5 nm.
The specific method in step S2 is as follows:
s201, opening circulating water of the atomic layer deposition system for refrigeration, inflating and opening a cabin door, tightly mounting a trimethylaluminum and vapor raw material bottle and a manual valve, closing the cabin door, setting the temperature of the deposition chamber to be 150 ℃ through a computer, setting the flow rate of carrier gas to be 30sccm after the temperature is stable, setting the introduction type, time, flow rate, reaction time and cleaning time of each raw material, and controlling the deposition speed to be 0.06nm per cycle. Setting the waiting time to be 1 minute, and starting a pre-deposition 40 cycle;
s202, after the pre-deposition is finished, inflating and opening a cabin door, uploading the 4H-SiC-loaded substrate carbon surface to an atomic layer deposition chamber, setting a proper cycle number, and starting formal deposition;
s203, when the requirement of the deposited film thickness is met, the deposition is automatically completed, and when the temperature of the deposition chamber is reduced to the room temperature, the sample is taken out by inflating.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a very high gain 4H-SiC-based broad spectrum phototransistor and a preparation method thereof, wherein a first Ag nano particle electrode and a second Ag nano particle electrode are arranged on one side of a 4H-SiC semiconductor and are respectively used as a source electrode and a drain electrode, and an atomic-level thick aluminum oxide layer and a grid electrode Ag layer are arranged on the other side of the 4H-SiC semiconductor. Wherein, the Ag nano-particle electrode is obtained by utilizing a cyclic voltammetry annealing method to act on an Ag membrane electrode. According to the invention, the bright current is obviously improved compared with a contrast phototransistor device which does not use cyclic voltammetry annealing through the action of hot carrier injection generated by exciting surface plasmons of the Ag nanoparticle electrode layer. When the gate source voltage V GS 3V and source-drain voltage V SD At a wavelength of 375nm (10.2 mW/cm) at 20V 2 ) Under light irradiation, the bright state leakage current I of the invention D Is 1.5X 10 -4 A, compared to (9.1X 10) of the control device -8 A) The lift is 1647 times.
2. The invention can realize the detection of the incident light with the wide spectrum of 300-900nm, the response rate is more than 100A/W, and particularly, the response rate is 4.2 multiplied by 10 under the wavelength of 360nm 5 A/W。
3. The transient response speed of the invention is fast, and the invention can make stable response to the incident pulse light signal, and the response speed is about 1.34 s.
Therefore, the invention realizes the 4H-SiC-based wide-spectrum phototransistor with extremely high gain, excellent detection performance, very simple preparation process and lower cost.
Drawings
Fig. 1 is a schematic structural diagram of an extremely high gain 4H-SiC based wide-spectrum phototransistor provided by an embodiment of the present invention. Wherein, 1 is a 4H-SiC layer, 2 is an alumina layer, 3 is a first Ag nano-particle electrode, 4 is a second Ag nano-particle electrode, and 5 is a grid Ag layer.
Fig. 2 is a micrograph of an array of square Ag films used as source or drain electrodes of an ultra-high gain 4H-SiC based broad spectrum phototransistor provided by an embodiment of the present invention before cyclic voltammetric annealing.
Fig. 3 is an SEM topography of the surface of the Ag nanoparticle layer formed as the source or the drain after cyclic voltammetry annealing for the ultra-high gain 4H-SiC based wide-spectrum phototransistor provided in the embodiment of the present invention.
FIG. 4 shows an extremely high gain 4H-SiC-based broad spectrum phototransistor and a comparison device thereof at V, according to an embodiment of the present invention GS At 3V, in a bright state I D With V SD The variation relationship diagram of (1), the lighting condition: wavelength 375nm and power density 10.2mW/cm 2 。
FIG. 5 shows an extremely high gain 4H-SiC-based broad spectrum phototransistor with V GS When the voltage changes from-18V to 18V, the bright state is I D Following V SD The variation relationship diagram of (1), the lighting condition: wavelength 375nm and power density 10.2mW/cm 2 。
Fig. 6 is a response rate spectrum of the extremely high gain 4H-SiC based broad spectrum phototransistor within a wavelength range of 300nm to 900nm, and bias conditions are as follows: v GS 3V and V SD When the voltage is 200V, the illumination condition is as follows: the xenon lamp light source is externally provided with a monochromator to generate monochromatic light with the power density of mu W/cm 2 And (4) horizontal.
Fig. 7 is a linear dynamic range performance diagram of the ultra-high gain 4H-SiC based broadband phototransistor at a wavelength of 375nm, and bias conditions during testing: v GS 3V and V SD When the pressure is 200V.
Fig. 8 is a transient current response diagram of an ultra-high gain 4H-SiC based wide-spectrum phototransistor according to the present invention, and the bias conditions during the test are as follows: v GS 3V and V SD When the voltage is 200V, the illumination condition is as follows: wavelength 375nm and power density 10.2mW/cm 2 。
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
As shown in fig. 1, an embodiment of the present invention provides an extremely high gain 4H-SiC based broad spectrum phototransistor, including a 4H-SiC substrate 1, a first Ag nanoparticle electrode 3 and a second Ag nanoparticle electrode 4 are disposed on a silicon surface of the 4H-SiC substrate 1, and a gap is disposed between the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4; the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4 are formed by randomly distributing Ag nanoparticles, and are prepared by acting an Ag thin film layer on the silicon surface of the 4H-SiC substrate 1 through a cyclic voltammetry annealing method; the carbon face of the 4H-SiC substrate 1 is provided with alumina (Al) 2 O 3 ) A layer 2, wherein a grid Ag layer 5 is arranged on the alumina layer 2; the first Ag nano-particle electrode 3 and the second Ag nano-particle electrode 4 are respectively used as a source electrode and a drain electrode, and the grid electrode Ag layer 5 is used as a grid electrode.
Specifically, in this embodiment, after a copper mesh mask is loaded on the silicon surface of the 4H — SiC, by using a magnetron sputtering technique, a plurality of square metal electrodes that can be used as the source electrode and the drain electrode of the comparison device, respectively, are prepared, and then the aluminum oxide layer 2 and the gate Ag layer 5 are prepared on the carbon surface, as shown in fig. 2, any two adjacent square metal electrodes can be used as the source electrode and the drain electrode, respectively. When the device is connected with a power supply and is processed by a cyclic voltammetry annealing method, the shapes of a source electrode and a drain electrode of the device are changed to form Ag nano particles as shown in figure 3, and the wide-spectrum phototransistor of the invention is obtained. The Ag nano-particle layer has the capacity of efficiently absorbing wide-spectrum incident light, can generate a large number of hot carriers, and hot carrier signals can be injected into 4H-SiC across a potential barrier, so that the conductivity distribution in the 4H-SiC is changed. The conductivity change of 4H-SiC is a precondition for the subsequent transistor amplification behavior.
In this example, the thickness of the Ag film before cyclic voltammetry annealing was 15 nm. + -. 5nm, and V during annealing GS Applying a bias of-15V, V SD Applying a voltage varying from-200V to 200V with an amplification of 2V, stabilizing each bias for 2s, and cyclically scanning for a certain number of times (50 + -10 times) to obtain leakage current I D And (4) rapidly increasing, stopping scanning, and preparing the Ag nano particles used as the source electrode and the drain electrode.
Specifically, in the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4, the diameter of the Ag nanoparticle is 170nm ± 20nm, the height of the Ag nanoparticle is 100nm ± 20nm, and the gap width between the Ag nanoparticle and the Ag nanoparticle is 250nm ± 20 nm.
The first Ag nano-particle electrode 3 and the second Ag nano-particle electrode 4 are square, and the side length is 230 microns +/-50 microns. The gap width between the first Ag nano-particle electrode 3 and the second Ag nano-particle electrode 4 is as follows: 30 μm. + -. 10 μm. The thickness of the 4H-SiC substrate 1 is 100-1000 mu m, the thickness of the aluminum oxide layer 2 is 0.6nm +/-0.12 nm, and the thickness of the grid Ag layer 5 is 100nm +/-20 nm.
Preferably, in the first Ag nanoparticle electrode 3 and the second Ag nanoparticle electrode 4, the diameter of the Ag nanoparticle is 170nm ± 2nm, the height of the Ag nanoparticle is 100nm ± 2nm, and the gap width between the Ag nanoparticles is 250nm ± 2 nm.
Further, in this embodiment, after a copper mesh mask is loaded on the silicon surface of the 4H-SiC substrate, a magnetron sputtering technique is used to deposit a square Ag film for preparing the source electrode and the drain electrode, and any two opposite electrodes can be used as the source electrode and the drain electrode during cyclic voltammetry annealing, respectively. And no mask is loaded when the bottom gate electrode is manufactured. In the specific test process, a common source connection method is adopted, and a source level is grounded.
Specifically, in this embodiment, the source electrode and the drain electrode before annealing are square electrodes with a side length of 230 μm ± 50 μm, the source electrode and the drain electrode before annealing are both 15nm ± 5nm thick, and the distance between the source electrode and the drain electrode before annealing is 30 μm ± 10 μm.
Preferably, in this embodiment, the source electrode and the drain electrode before annealing are square electrodes with a side length of 230 μm ± 1 μm, the thickness of the source electrode and the drain electrode before annealing is 15nm ± 1nm, and the distance between the source electrode and the drain electrode before annealing is 30 μm ± 1 μm.
Further, in the present embodiment, the 4H — SiC substrate is a semi-insulating type, is a weak n-type, and has a resistivity of 1e13ohm cm to 1e15 ohm cm.
Preferably, in the embodiment, the 4H-SiC substrate is semi-insulating, weak n-type, and has a resistivity of 5e13ohm cm to 5e14 ohm cm.
Preferably, in the embodiment, the thickness of the 4H-SiC substrate is 500 μm +/-20 μm, the thickness of the aluminum oxide layer 2 is 0.6nm +/-0.06 nm, and the thickness of the gate Ag layer is 100nm +/-5 nm.
The embodiment of the invention provides an extremely-high-gain 4H-SiC-based broad-spectrum phototransistor and a preparation method thereof. A source electrode Ag nano particle layer and a drain electrode Ag nano particle layer are arranged on one side of a 4H-SiC semiconductor, and an atomic-level thick aluminum oxide layer and a grid electrode Ag layer are arranged on the other side of the 4H-SiC semiconductor, so that the 4H-SiC-based wide-spectrum phototransistor is manufactured. Specifically, the source electrode Ag nanoparticle layer and the drain electrode Ag nanoparticle layer are further prepared by cyclic voltammetry annealing on the basis of preparing the electrode Ag film. The Ag nano-particle layer plays a role in exciting surface plasmons to generate hot carrier injection. The invention and the unused cyclic voltammetry annealingThe bright current is significantly increased compared to the phototransistor device. When the gate source voltage V GS -6V and source-drain voltage V SD At a wavelength of 375nm (10.2 mW/cm) at 20V 2 ) Under light irradiation, the bright state leakage current I of the invention D Is 1.5X 10 -4 A, compared to the control device (9.1X 10) -8 A) The lift is 1647 times. The invention can realize the detection of the incident light with the wide spectrum of 300-900nm, and the response rate is more than 100A/W. Therefore, the invention realizes the 4H-SiC-based wide-spectrum phototransistor with extremely high gain, and the preparation process is very simple and the cost is relatively low.
Example two
The second embodiment of the invention provides a preparation method of a very high-gain 4H-SiC-based broad spectrum phototransistor, and the materials used in the second embodiment are as follows:
4H-SiC substrate, Ag target, deionized water, nitric acid, liquid detergent, acetone, absolute ethyl alcohol and copper mesh mask. The combined dosage and the screening standard are as follows:
4H-SiC substrate: semi-insulating type, weak n type, with resistivity of 1e14 ohm cm, area of 20mm × 20mm, and thickness of 500 μm;
ag target material: solid, copper backplane binding, 99.999% purity;
deionized water: h 2 O 8000mL±50mL；
Nitric acid: HNO 3 ，68％
Liquid detergent: 2 plus or minus 0.5 mL;
acetone: CH (CH) 3 COCH 3 250 mL±5mL；
Anhydrous ethanol: c 2 H 5 OH 500mL±5mL；
Masking a copper mesh: copper; the ribs are 30 mu m in width, the side length of the grids is 230 mu m, and the thickness is 20-30 mu m.
The preparation method of the extremely high gain 4H-SiC based wide spectrum phototransistor provided by the embodiment specifically includes the following steps.
And S1, calibrating the carbon surface and the silicon surface of the silicon carbide substrate through an atomic force microscope, and cleaning and drying the silicon carbide substrate.
In step S1, the method for cleaning the 4H-SiC substrate includes:
s101, putting a 4H-SiC substrate into a polytetrafluoroethylene beaker, adding concentrated nitric acid into the polytetrafluoroethylene beaker, covering the opening of the beaker with aluminum foil paper, ultrasonically soaking for more than 20min, taking out the 4H-SiC substrate, washing with clear water, and removing residual solution;
s102, coating a detergent and a decontaminating agent on the surface of the 4H-SiC substrate, and repeatedly kneading until the surface of the 4H-SiC substrate is washed by clean water to form a uniform water film;
s103, next, vertically placing the 4H-SiC substrate in a beaker frame and placing the substrate in a glass beaker. Deionized water, acetone and absolute ethyl alcohol are added in sequence for ultrasonic treatment for 15min respectively. And after the ultrasonic treatment is finished, putting the cleaned 4H-SiC substrate into a beaker filled with isopropanol for storage for later use.
And S2, depositing an aluminum oxide layer 2 on the carbon surface of the 4H-SiC substrate by utilizing an atomic layer deposition technology.
The specific method in step S2 is:
s201, opening circulating water of the atomic layer deposition system for refrigeration, inflating and opening a cabin door, tightly mounting a trimethylaluminum and vapor raw material bottle and a manual valve, closing the cabin door, setting the temperature of the deposition chamber to be 150 ℃ through a computer, setting the flow rate of carrier gas to be 30sccm after the temperature is stable, setting the introduction type, time, flow rate, reaction time and cleaning time of each raw material, and controlling the deposition speed to be 0.06nm per cycle. The wait time was set to 1 minute and a pre-deposition 40 cycle was started.
S202, after the pre-deposition is finished, inflating to open a cabin door, uploading the 4H-SiC-loaded substrate carbon surface to an atomic layer deposition chamber, starting formal deposition, and setting a proper cycle number to reach the required film thickness requirement (0.6 nm).
And S203, when the requirement of the deposited film thickness is met, automatically completing deposition, inflating to take out a sample when the temperature of the deposition chamber is reduced to the room temperature, and preparing to enter the next step without removing the metal mask. Then, the instrument is vacuumized, the manual valve is closed, and all residual raw materials in the pipeline are emptied. Re-inflating to atmospheric pressure, turning off the vacuum pump, stopping heating, and turning off the power switch of the equipment when the temperature is reduced to room temperature.
S3, arranging a mask on the silicon surface of the 4H-SiC substrate, and depositing Ag thin film layers for preparing the first Ag nano-particle electrode 3 and the second Ag nano-particle electrode 4 on the silicon surface of the 4H-SiC substrate by utilizing a magnetron sputtering technology.
The mask adopted in the step S3 is a copper mesh mask, and the geometric parameters of the copper mesh mask are that the side length of a square grid is 230 microns +/-50 microns, the rib width is 30 +/-10 microns, and the thickness is 20-30 microns; the thickness of the sputtered Ag film layer is 15nm +/-5 nm.
The specific method in step S3 is:
s301, adhering a copper mesh mask to the silicon surface of the 4H-SiC substrate;
s302, mounting the Ag target on a target head of a magnetron sputtering coating machine. And then, placing the 4H-SiC substrate attached with the copper mesh on a sample holder of a magnetron sputtering coating machine, and paying attention to protect the prepared film layer. And rotating the sample tray to enable the 4H-SiC substrate to be positioned right above the Ag target.
S303, closing the magnetron sputtering cabin door, clicking a key on the display screen to start, and opening the vacuum gauge and the molecular pump to ensure that the pressure of the cabin body reaches 10 -4 And when Pa is needed, opening an argon magnetic control valve, a mechanical valve and a flowmeter in sequence, selecting proper argon flow, and then adjusting a gate valve of the molecular pump to maintain the pressure of the cavity at 2 Pa.
S304, turning on a sputtering power supply, and adjusting the power required by sputtering (after ignition, the pressure can be further adjusted through a gate valve, so that the sputtering rate meets the film forming requirement). The pre-sputtering is carried out for 10 minutes, and then the formal sputtering is carried out.
S305, when the required film thickness is achieved, the large baffle and the radio frequency sputtering power supply are closed in sequence. And finally, taking out the device from the coating chamber, and slowly uncovering the adhesive tape by using tweezers to detach the copper mesh.
And S4, preparing a grid Ag layer on one side of the alumina layer 2 by utilizing a magnetron sputtering technology.
The specific method in step S4 is:
s401, confirming that the Ag target is installed on a target head of a magnetron sputtering coating machine. Thereafter, the 4H-SiC substrate is placed onAl is deposited on a sample holder of a magnetron sputtering coating machine 2 O 3 One side of the layer is the side to be deposited, and the side faces downwards, so that the finished film layer is protected. And rotating the sample tray to enable the 4H-SiC substrate to be positioned right above the Ag target.
S402, closing the magnetron sputtering cabin door, clicking a key on the display screen to start, and opening the vacuum gauge and the molecular pump to enable the pressure of the cabin body to reach 10 -4 And when the pressure is Pa, sequentially opening an argon magnetic control valve, a mechanical valve and a flowmeter, selecting proper argon flow, and then adjusting a gate valve of the molecular pump to maintain the pressure of the cavity at 2 Pa.
And S403, turning on a sputtering power supply, and adjusting the power required by sputtering (after starting, the pressure can be further adjusted through a gate valve, so that the sputtering rate meets the film forming requirement). The pre-sputtering is carried out for 10 minutes, and then the formal sputtering is carried out.
And S404, when the required film thickness is reached, closing the large baffle and the radio frequency sputtering power supply in sequence. And finally, taking the device out of the coating chamber for later use.
And S5, converting the Ag thin film layer prepared in the step S3 into a first Ag nano-particle electrode and a second Ag nano-particle electrode which are used as a source electrode and a drain electrode by using a cyclic voltammetry annealing method.
The specific method in step S5 is:
s501, selecting two adjacent square Ag thin films as a source electrode and a drain electrode from the Ag thin films, and respectively connecting the source electrode, the drain electrode and the grid electrode with a power supply by adopting a common source connection method.
In this embodiment, the source is connected to the high-level terminal of the first power supply, the gate is connected to the high-level terminal of the second power supply, the drain is connected to the low-level terminal of the first power supply, and the low-level terminals of the first power supply and the second power supply are connected in common.
S502, supplying a-15V bias voltage to the source electrode, supplying a voltage which changes from-200V to the grid electrode, wherein the voltage amplification is 2V, each bias voltage is stable for 2S, and after voltage cyclic scanning is carried out for multiple times, the leakage current I is D And stopping scanning during rapid increase, realizing the annealing effect on the Ag film, and forming an Ag nano particle layer used as a source electrode and a drain electrode.
In particular, the present inventionIn the embodiment, when the voltage cycle scanning times are 50 +/-10, the leakage current I D Increased to 10 -4 And the annealing effect on the Ag film is realized at the moment.
In this embodiment, V is supplied from the first power supply GS Applying a bias voltage of-15V to V via a second power supply SD Applying a voltage varying from-200V to 200V with an amplification of 2V, stabilizing each bias for 2s, and periodically scanning the voltage for a certain number of times (50 + -10 times) to obtain a leakage current I D And (3) rapidly increasing, stopping scanning at the moment, realizing the annealing effect of the Ag film in the process, forming an Ag nano particle layer used as a source electrode and a drain electrode, and collecting a sample to obtain the extremely-high-gain 4H-SiC-based broad-spectrum phototransistor.
Detection, analysis and characterization: and detecting, analyzing and characterizing the performance of the prepared extremely-high-gain 4H-SiC-based broad-spectrum phototransistor.
A Thorlabs 375nm LED was used as the light source and Agilent B2902 was used to characterize the bright state current-voltage characteristic of the device. And obtaining a monochromatic light source by using a xenon lamp and a monochromator, irradiating the collimated light source on the surface of a sample, testing a bright-state current-voltage characteristic curve of the transistor device under different wavelengths by using an Agilent B2902, and drawing a response rate spectrogram of the device based on the bright-state current-voltage characteristic curve. The linear dynamic range of the device is characterized by adding an attenuation sheet in front of a Thorlabs 375nm LED to change the illumination intensity. A signal generator is adopted to control a Thorlabs 375nm LED to serve as a light source, and Agilent B2902 is used for characterizing the transient photocurrent response characteristic of the device.
And (4) conclusion: the current-voltage characteristics of an extremely high gain 4H-SiC-based broad spectrum phototransistor of the present invention were analyzed. First, the appearances of the source and drain electrodes of the phototransistor device before and after cyclic voltammetry annealing were observed, and a micrograph of the electrode before annealing is shown in fig. 2, and an SEM appearance after annealing is shown in fig. 3. As can be seen from the figure, a randomly distributed Ag nanoparticle layer is formed on the originally smooth and flat Ag electrode. For this transistor type device, the drain current I is according to kirchhoff's law D ＝I SD +I GD In which I SD 、I GD Respectively 4H-SiC flows from the source to the drainAnd the current flowing from the gate to the drain. The premise that the drain current shows the gain is I GD Is far greater than I SD And the gate potential is higher than the drain potential to ensure that the current flow between the gate and drain is from the gate to the drain, such that I D A gain is exhibited. The typical voltage applied in the present invention satisfies this condition (V) GS 3V and V SD 200V) to obtain gain performance.
FIG. 4 shows the source-drain voltage V SD Bright state I of the device before cyclic voltammetric annealing (control device) and after cyclic voltammetric annealing (invention) when changing from-20V to 20V D A comparative graph of (a). Wherein the grid voltage is-6V, the light source wavelength is 375nm, and the power density is 10.2mW/cm 2 . As can be seen in the figure, at V SD When the voltage is 20V, the bright current of the device after cyclic voltammetry annealing is 9.1 multiplied by 10 from the original bright current (before cyclic voltammetry annealing) -8 A is increased to 1.5 multiplied by 10 -4 A, an increase of 1647 times. The annealing effect appears on the source electrode and the drain electrode after the bias voltage is increased circularly to form Ag nano particles, which can strongly absorb incident light by exciting the surface plasmon resonance effect to generate a large amount of hot carriers which are V-shaped GS Is implanted into the 4H-SiC interior and is effectively amplified by the transistor.
FIG. 5 shows V GS The bright drain current I of the invention changes from-18V to 18V D Following V SD A graph of the variation relationship of (c). Wherein the light source wavelength is 375nm, and the power density is 10.2mW/cm 2 . As can be seen from the figure, when V is SD <At 0, all devices are in a cut-off state; when V is GS At different times, the turn-on voltage V of the device th Different. V GS When equal to-6V, bright current I D Most preferably, at V SD Reaches 1.5 multiplied by 10 under 20V bias -4 A。
FIG. 6 shows the response spectrum of the present invention over the wavelength range of 300nm-900nm, where V GS ＝3V，V SD 200V, the light source is a xenon lamp light source and monochromatic light is generated by a monochromator, and the power density is mu W/cm 2 And (4) horizontal. As can be seen from the figures, the present invention can be practicedThe response rate of the incident light with the wide spectrum of 300-900nm is more than 100A/W, and particularly, the response rate is 4.2 multiplied by 10 under the wavelength of 360nm 5 A/W。
FIG. 7 shows a plot of the linear dynamic range performance of the present invention at a wavelength of 375 nm. Wherein, V GS 3V and V SD 200V. As can be seen from the figure, the LDR of the device can reach 144dB, and the weakest detectable optical power density is 4.2nW/cm 2 This indicates that the present invention has excellent weak light detection capability.
FIG. 8 is a graph showing the transient current response at a wavelength of 375nm of the present invention, where V GS ＝3V，V SD 200V, the light source wavelength is 375nm, and the power density is 10.2mW/cm 2 . It can be seen from the figure that the invention can make stable response to the incident pulse light signal, and the response speed is about 1.34 s.
In summary, the invention discloses a very high gain 4H-SiC based broad spectrum phototransistor, which is characterized in that a square Ag thin film for preparing a source electrode and a drain electrode is firstly deposited on a silicon surface of semi-insulating 4H-SiC, an interface modified alumina layer and a grid Ag layer are prepared on a carbon surface of the 4H-SiC, and a square Ag thin film electrode is converted into an Ag nano particle layer by using a cyclic voltammetry annealing method. The device realizes the wide-spectrum photoelectric detection performance with extremely high gain, and the response rate of the device is over 1000A/W in the wide-spectrum range of 300-900 nm. In addition, the response rate of the device reaches 10 under the ultraviolet band 5 A/W is more than. The device has very good weak light detection capability and can detect nW/cm 2 Horizontally weak light. The preparation method of the detector is simple and low in cost, the Ag nano particles formed by the cyclic voltammetry annealing method are used for realizing efficient generation of wide-spectrum hot carrier signals by exciting the surface plasmon resonance effect, and the transistor type device enables hot carriers to be successfully injected into 4H-SiC and realizes effective amplification. Compared with a non-annealed transistor type control device, the brightness current at the wavelength of 375nm shows 1647 times of improvement.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The extremely-high-gain 4H-SiC-based broad spectrum phototransistor is characterized by comprising a 4H-SiC substrate (1), wherein a first Ag nano-particle electrode (3) and a second Ag nano-particle electrode (4) are arranged on the silicon surface of the 4H-SiC substrate (1), and a gap is arranged between the first Ag nano-particle electrode (3) and the second Ag nano-particle electrode (4); the first Ag nano-particle electrode (3) and the second Ag nano-particle electrode (4) are formed by randomly distributing Ag nano-particles and are prepared by acting an Ag thin film layer on the silicon surface of a 4H-SiC substrate (1) through a cyclic voltammetry annealing method;
an aluminum oxide layer (2) is arranged on the carbon surface of the 4H-SiC substrate (1), and a grid Ag layer (5) is arranged on the aluminum oxide layer (2);
the first Ag nano-particle electrode (3) and the second Ag nano-particle electrode (4) are respectively used as a source electrode and a drain electrode, and the grid electrode Ag layer (5) is used as a grid electrode.
2. The very high gain 4H-SiC based broad spectrum phototransistor of claim 1, wherein the Ag nanoparticles in the first Ag nanoparticle electrode (3) and the second Ag nanoparticle electrode (4) have a diameter of 170nm ± 20nm, a particle height of 100nm ± 20nm, and a gap width between particles of 250nm ± 20 nm.
3. An ultra-high gain 4H-SiC based broad spectrum phototransistor as claimed in claim 1 wherein the first Ag nanoparticle electrode (3) and the second Ag nanoparticle electrode (4) are square with sides 230 μm ± 50 μm.
4. An extremely high gain 4H-SiC based broad spectrum phototransistor as set forth in claim 1 wherein the gap width provided between said first Ag nanoparticle electrode (3) and said second Ag nanoparticle electrode (4) is: 30 μm. + -. 10 μm.
5. The very high gain 4H-SiC based broad spectrum phototransistor as set forth in claim 1, wherein the thickness of said 4H-SiC substrate (1) is 100 to 1000 μm, the thickness of said aluminum oxide layer (2) is 0.6nm ± 0.12nm, and the thickness of said gate Ag layer (5) is 100nm ± 20 nm.
6. The method for preparing an extremely high gain 4H-SiC based broad spectrum phototransistor according to any one of claims 1 to 5, comprising the steps of:
s1, calibrating the carbon surface and the silicon surface of the silicon carbide substrate through an atomic force microscope, and cleaning and drying the silicon carbide substrate;
s2, depositing an aluminum oxide layer (2) on the carbon surface of the 4H-SiC substrate by utilizing an atomic layer deposition technology;
s3, arranging a mask on the silicon surface of the 4H-SiC substrate, and depositing Ag thin film layers for preparing a first Ag nano-particle electrode (3) and a second Ag nano-particle electrode (4) on the silicon surface of the 4H-SiC substrate by utilizing a magnetron sputtering technology;
s4, preparing a grid Ag layer on one side of the alumina layer (2) by utilizing a magnetron sputtering technology;
and S5, converting the Ag thin film layer prepared in the step S3 into a first Ag nano-particle electrode (3) and a second Ag nano-particle electrode (4) which are used as a source electrode and a drain electrode by using a cyclic voltammetry annealing method.
7. The method for preparing a very high gain 4H-SiC based broad spectrum phototransistor according to claim 6, wherein the specific method in step S5 is:
s501, selecting two adjacent square Ag thin films as a source electrode and a drain electrode from the Ag thin films, and respectively connecting the source electrode, the drain electrode and the grid electrode with a power supply by adopting a common source connection method;
s502, supplying a-15V bias voltage to the source, supplying a voltage which is changed from-200V to the grid, wherein the voltage is increased by 2V, and each bias voltageVoltage stabilization for 2s time, voltage cyclic scanning for multiple times to leakage current I D And when the current is increased rapidly, the scanning is stopped, the annealing effect of the Ag film is realized, and an Ag nano particle layer used as a source electrode and a drain electrode is formed.
8. The method of claim 7, wherein in step S501, the source is connected to a high-level terminal of a first power supply, the gate is connected to a high-level terminal of a second power supply, the drain is connected to a low-level terminal of the first power supply, and the low-level terminals of the first power supply and the second power supply are connected to a common ground.
9. The method as claimed in claim 6, wherein the mask used in step S3 is a copper mesh mask, and the geometric parameters of the copper mesh mask are that the side length of the square grid is 230 μm ± 50 μm, the rib width is 30 ± 10 μm, and the thickness is 20-30 μm; the thickness of the sputtered Ag film layer is 15nm +/-5 nm.
10. The method for preparing the extremely high gain 4H-SiC-based broad spectrum phototransistor of claim 6, wherein the specific method in the step S2 is:
s201, opening circulating water of an atomic layer deposition system for refrigeration, inflating and opening a cabin door, tightly mounting a trimethylaluminum and vapor raw material bottle and a manual valve, closing the cabin door, setting the temperature of a deposition chamber to be 150 ℃ through a computer, setting the flow rate of carrier gas to be 30sccm after the temperature is stable, setting the introduction type, time, flow rate, reaction time and cleaning time of each raw material, and controlling the deposition speed to be 0.06nm per cycle; setting the waiting time to be 1 minute, and starting a pre-deposition 40 cycle;
s202, after the pre-deposition is finished, inflating and opening a cabin door, uploading the 4H-SiC-loaded substrate carbon surface to an atomic layer deposition chamber, setting a proper cycle number, and starting formal deposition;
and S203, when the requirement of the deposited film thickness is met, automatically finishing deposition, and inflating and taking out a sample when the temperature of the deposition chamber is reduced to the room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210686413.4A CN115000197B (en) | 2022-06-17 | 2022-06-17 | Extremely high gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210686413.4A CN115000197B (en) | 2022-06-17 | 2022-06-17 | Extremely high gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115000197A true CN115000197A (en) | 2022-09-02 |
| CN115000197B CN115000197B (en) | 2023-12-29 |
Family
ID=83034811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210686413.4A Active CN115000197B (en) | 2022-06-17 | 2022-06-17 | Extremely high gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115000197B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080296567A1 (en) * | 2007-06-04 | 2008-12-04 | Irving Lyn M | Method of making thin film transistors comprising zinc-oxide-based semiconductor materials |
| JP2010056285A (en) * | 2008-08-28 | 2010-03-11 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide semiconductor device |
| KR101719763B1 (en) * | 2015-10-27 | 2017-03-27 | 광운대학교 산학협력단 | Method for controlling of growth of self-assembled Au nanoparticles on 4H-SiC |
| CN113013278A (en) * | 2021-03-12 | 2021-06-22 | 太原理工大学 | Silicon carbide-based full-spectrum response photoelectric detector and preparation method thereof |
| CN113451423A (en) * | 2021-07-27 | 2021-09-28 | 湖南大学 | Heterojunction photoelectric synapse device based on plasmon effect |
| CN113871468A (en) * | 2021-07-20 | 2021-12-31 | 厦门大学 | Silicon carbide MIS device with stacked gate structure and preparation method thereof |
-
2022
- 2022-06-17 CN CN202210686413.4A patent/CN115000197B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080296567A1 (en) * | 2007-06-04 | 2008-12-04 | Irving Lyn M | Method of making thin film transistors comprising zinc-oxide-based semiconductor materials |
| JP2010056285A (en) * | 2008-08-28 | 2010-03-11 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide semiconductor device |
| KR101719763B1 (en) * | 2015-10-27 | 2017-03-27 | 광운대학교 산학협력단 | Method for controlling of growth of self-assembled Au nanoparticles on 4H-SiC |
| CN113013278A (en) * | 2021-03-12 | 2021-06-22 | 太原理工大学 | Silicon carbide-based full-spectrum response photoelectric detector and preparation method thereof |
| CN113871468A (en) * | 2021-07-20 | 2021-12-31 | 厦门大学 | Silicon carbide MIS device with stacked gate structure and preparation method thereof |
| CN113451423A (en) * | 2021-07-27 | 2021-09-28 | 湖南大学 | Heterojunction photoelectric synapse device based on plasmon effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115000197B (en) | 2023-12-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| He et al. | Study of the photoconductive ZnO UV detector based on the electrically floated nanowire array | |
| Yıldırım et al. | Characterization of Al/In: ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers | |
| Chandiramouli et al. | Review of CdO thin films | |
| Jundale et al. | Nanocrystalline CuO thin films for H2S monitoring: microstructural and optoelectronic characterization | |
| Dhara et al. | Enhanced UV photosensitivity from rapid thermal annealed vertically aligned ZnO nanowires | |
| Kushwaha et al. | Defect induced high photocurrent in solution grown vertically aligned ZnO nanowire array films | |
| Kumar et al. | Colloidal ZnO quantum dots based spectrum selective ultraviolet photodetectors | |
| Liang et al. | The epitaxial growth of ZnS nanowire arrays and their applications in UV-light detection | |
| Zhang et al. | Development of solution-processed ZnO nanorod arrays based photodetectors and the improvement of UV photoresponse via AZO seed layers | |
| Pooja et al. | Annealed n-TiO2/In2O3 nanowire metal-insulator-semiconductor for highly photosensitive low-noise ultraviolet photodetector | |
| Chiu et al. | Opto-electrical properties and chemisorption reactivity of Ga-doped ZnO nanopagodas | |
| Kaawash et al. | Highly stable and sensitive photon detection performance of ZnO thin film for ultraviolet light | |
| Moudgil et al. | In 2 O 3/TiO 2 heterostructure for highly responsive low-noise ultraviolet photodetector | |
| Farhat et al. | Fabrication and characterization of ZnO nanowires by wet oxidation of Zn thin film deposited on Teflon substrate | |
| Chen et al. | Photoelectrical and low-frequency noise characteristics of ZnO nanorod photodetectors prepared on flexible substrate | |
| Lu et al. | Charge-separation kinetics of photoexcited oxygen vacancies in ZnO nanowire field-effect transistors | |
| Ruzgar | Enhancement of the electrical performance of TiO2/p-Si heterojunction diode by Gadolinium doping | |
| Thomas et al. | High-Performance Flexible Ultraviolet Photodetectors Based on Facilely Synthesized Ecofriendly ZnAl: LDH Nanosheets | |
| Devi et al. | Effect of Ag decoration on the photodetection of catalyst-free synthesized vertically oriented SiOx NW arrays | |
| Zhang et al. | Low-Temperature Solution-Processed Lu 2 O 3 Films for Deep-UV Photovoltaic Detectors With High Sensitivity | |
| CN112310239B (en) | Method for preparing high-performance ZnO film ultraviolet detector by ALD (atomic layer deposition) combined silver nanowire enhancement method | |
| CN115000197B (en) | Extremely high gain 4H-SiC-based broad spectrum phototransistor and preparation method thereof | |
| Thahe et al. | Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors | |
| CN114944439A (en) | Transistor type 4H-SiC ultraviolet photoelectric detector and preparation method thereof | |
| Vasudevan et al. | Quasi-symmetric Wheatstone bridge zinc oxide nanorod UV detectors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |