CN114975387A - Power module and vehicle with same - Google Patents
Power module and vehicle with same Download PDFInfo
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- CN114975387A CN114975387A CN202210547213.0A CN202210547213A CN114975387A CN 114975387 A CN114975387 A CN 114975387A CN 202210547213 A CN202210547213 A CN 202210547213A CN 114975387 A CN114975387 A CN 114975387A
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- H01—ELECTRIC ELEMENTS
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention provides a power module and a vehicle with the same, wherein the power module comprises: the copper-clad plate comprises a ceramic lining plate, a power copper bar assembly and a transition copper sheet, wherein the ceramic lining plate is provided with a top copper-clad layer, the top copper-clad layer comprises a first copper-clad layer, a second copper-clad layer and a third copper-clad layer, the first copper-clad layer and the second copper-clad layer are symmetrically arranged relative to the third copper-clad layer, the first copper-clad layer is provided with a first power chip, and the second copper-clad layer is provided with a second power chip; the power copper bar component comprises a copper bar anode, a copper bar cathode and a copper bar body, wherein a transition copper sheet is arranged between the copper bar cathode and a second power chip, wherein the copper bar cathode is arranged between a first power chip and the copper bar anode, the copper bar cathode is arranged between the transition copper sheet and the second power chip, the copper bar anode is arranged between a first copper-clad layer and a second copper-clad layer, the second power chip is arranged between the second copper-clad layer and a third copper-clad layer, and the copper bar body is connected with the third copper-clad layer through a sintering layer of a sintering process. The invention solves the problem of low power connection reliability of the power chip in the power module.
Description
Technical Field
The invention relates to the technical field of vehicles, in particular to a power module and a vehicle with the same.
Background
The power module is a key component in an electric drive system for an electric vehicle, is responsible for high-power electric energy conversion in the electric vehicle, and has decisive influence on the performance, efficiency, cost, safety and reliability of the electric drive system and even the whole vehicle, so that the characteristics, structure, process and other aspects of the power module become more important. The power module of the prior invention mainly reduces the thermal resistance through the direct cooling of a single surface or double surfaces in the aspects of heat dissipation, circuit connection, chip layout and the like, thereby improving the heat dissipation efficiency of the power module; the power chips are distributed in a staggered manner, so that balanced heat dissipation of the power chips in time-sharing work in actual work is realized; high reliability connections are achieved through ultrasonic bonding of power terminals, and the like.
The prior art discloses a heat dissipation module, a load controller and a vehicle of a power module, wherein a heat sink is adopted to clamp the power module to realize double-sided heat dissipation, but the heat resistance of the mode is large and is easily influenced by clamping force, and heat conduction materials are required to be filled between the heat sink and the power module so as to be in good contact with the heat sink and increase the heat resistance to influence the heat dissipation effect of the power module.
The prior art also discloses a power module, which adopts an integrally formed power terminal, and reduces the risk of the power connection reliability of the separated binding wire through the integrally formed power terminal, but the practical application of the method has the following problems: the power terminal is generally thick, and the bonding difficulty is high when the power terminal is connected with a chip in a bonding belt mode, and the bonding belt is deformed to cause the risk of damaging the chip.
Disclosure of Invention
The invention mainly aims to provide a power module and a vehicle with the same, and aims to solve the problem of low power connection reliability in the conventional power module.
In order to achieve the above object, according to an aspect of the present invention, there is provided a power module including: the ceramic lining plate is provided with a top copper-clad layer, the top copper-clad layer comprises a first copper-clad layer, a second copper-clad layer and a third copper-clad layer, the first copper-clad layer and the second copper-clad layer are symmetrically arranged relative to the third copper-clad layer, the first copper-clad layer is provided with a first power chip, and the second copper-clad layer is provided with a second power chip; the power copper bar assembly comprises a copper bar anode, a copper bar cathode and a copper bar body, the copper bar anode is arranged between the first power chip and the first copper-clad layer, at least part of the copper bar body is arranged on the third copper-clad layer, and the first power chip is electrically connected with the second power chip through the copper bar body; the transition copper sheet is arranged between the negative electrode of the copper bar and the second power chip, wherein the first power chip is connected with the positive electrode of the copper bar, the negative electrode of the copper bar, the transition copper sheet is connected with the second power chip, the positive electrode of the copper bar is connected with the first copper-clad layer, the second power chip is connected with the second copper-clad layer, and the copper bar body is connected with the third copper-clad layer through a sintering layer of a sintering process.
Furthermore, the top surface of part of the positive electrode of the copper bar is connected with the bottom surface of the first power chip through a sintering layer, the bottom surface of part of the positive electrode of the copper bar is connected with the first copper-clad layer through the sintering layer, the bottom surface of part of the negative electrode of the copper bar is connected with the top surface of the transition copper sheet through the sintering layer, the bottom surface of the transition copper sheet is connected with the top surface of the second power chip through the sintering layer, the bottom surface of the second power chip is connected with the second copper-clad layer through the sintering layer, and the bottom surface of the copper bar body is connected with the third copper-clad layer through the sintering layer.
Further, the copper bar body includes: the copper-clad layer is connected with the third copper-clad layer through the sintered layer, the second copper-clad body is arranged oppositely to the first copper-clad body, the second copper-clad body is connected with the third copper-clad layer through the sintered layer, and the first power chip is electrically connected with the second power chip through the first copper-clad body and the second copper-clad body.
Further, the copper bar positive pole includes: the first end of the first composition section extends along the width direction of the ceramic lining plate; the first end of the second component section is connected with the second end of the first component section, and the second end of the second component section extends along the length direction of the ceramic lining plate; the copper bar negative pole includes: the second end of the third component section extends along the width direction of the ceramic lining plate, and the third component section is arranged on the first component section in an overlapping manner; and the first end of the fourth component section is connected with the first end of the third component section, the second end of the fourth component section extends along the length direction of the ceramic lining plate, and the fourth component section and the second component section are symmetrically arranged relative to the third copper-clad layer.
Further, the power copper bar assembly still includes: and part of the copper bar output electrodes are connected with the third copper-clad layer through the sintering layer, and are electrically connected with the second and fourth component sections.
Further, the copper bar output pole still includes: the fifth composition section is connected with the third copper-clad layer through a sintering layer of a sintering process, electrically connected with the second composition section and the fourth composition section, and provided with a first end extending along the length direction of the ceramic lining plate; the middle part of the sixth composition section is connected with the second end of the fifth composition section, the sixth composition section is used for being connected with a power load, and the sixth composition section extends along the width direction of the ceramic lining plate.
Further, the power module further includes: and the insulating gasket is arranged between the first component section and the third component section.
Further, the power module further includes: electric capacity crimping copper bar, electric capacity crimping copper bar include the positive and crimping copper bar negative pole of crimping copper bar, and the positive wrong tooth shell fragment that passes through in the electric capacity crimping copper bar of crimping copper bar is connected with first component section crimping, and crimping copper bar positive pole sets up in the below of first component section, and crimping copper bar negative pole becomes section crimping through wrong tooth shell fragment and third component and is connected, and crimping copper bar negative pole sets up in the top that the third component becomes the section.
Further, the power module further includes: and the cooling bottom plate is connected with the copper-clad layer at the bottom of the ceramic lining plate through a sintering layer of a sintering process.
According to another aspect of the present invention, there is provided a vehicle including the power module described above.
By applying the technical scheme of the invention, the first power chip is arranged on the first copper-clad layer of the copper-clad layer on the top of the ceramic lining plate, the second power chip is arranged on the second copper-clad layer, at least part of the copper bar body is arranged on the third copper-clad layer, the first power chip is directly electrically connected with the second power chip through the copper bar body, the transition copper sheets are arranged between the negative electrode of the copper bar and the second power chip, and the first power chip and the positive electrode of the copper bar, the negative electrode of the copper bar, the transition copper sheets and the second power chip, the positive electrode of the copper bar and the first copper-clad layer, the second power chip and the second copper-clad layer, and the copper bar body and the third copper-clad layer are all connected through the sintering layers of the sintering process, so that the connection reliability of the power copper bar assembly, the first power chip and the second power chip is improved, and the connection reliability of the positive electrode of the copper bar and the copper bar body is improved, The connection reliability of the first power chip, the second power chip and the ceramic lining plate, and the current carrying capacity of the power module can be improved by the copper bar body and the transition copper sheet, so that the heat capacity of the first power chip and the second power chip is increased, the transient performance output capacity of the first power chip and the second power chip is improved, and the problem of low power connection reliability in the power module in the prior art is solved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 shows a schematic structural diagram of a first embodiment of a power module according to the invention;
fig. 2 shows a schematic structural diagram of a second embodiment of a power module according to the invention;
fig. 3 shows a schematic structural diagram of a third embodiment of a power module according to the invention;
fig. 4 shows a schematic structural diagram of a fourth embodiment of a power module according to the invention;
fig. 5 shows a schematic structural view of a first embodiment of a copper bar positive electrode according to the present invention;
fig. 6 shows a schematic structural diagram of a second embodiment of the copper bar positive electrode according to the present invention;
fig. 7 shows a schematic structural diagram of a first embodiment of the copper bar cathode according to the present invention;
fig. 8 shows a schematic structural diagram of a second embodiment of the copper bar cathode according to the present invention;
FIG. 9 is a schematic structural diagram of a first embodiment of a copper bar output electrode according to the present invention;
FIG. 10 is a schematic structural diagram of a second embodiment of a copper bar output electrode according to the present invention;
fig. 11 shows a schematic structural view of a first embodiment of the first copper busbar body according to the invention;
fig. 12 shows a schematic structural view of a second embodiment of the first copper busbar body according to the invention;
fig. 13 shows a schematic structural view of a first embodiment of the second copper busbar body according to the invention;
fig. 14 shows a schematic structural view of a second embodiment of the second copper busbar body according to the invention;
fig. 15 shows a schematic structural diagram of a fifth embodiment of a power module according to the invention;
fig. 16 shows a schematic structural view of a first embodiment of a capacitor crimp copper bar according to the present invention;
fig. 17 is a schematic structural view showing a second embodiment of a capacitor crimp copper bar according to the present invention;
fig. 18 shows a schematic structural view of the embodiment at a-a in fig. 17.
Wherein the figures include the following reference numerals:
10. a ceramic liner plate; 11. covering a copper layer on the top; 111. a first copper-clad layer; 112. a second copper-clad layer; 113. a third copper-clad layer; 12. coating a copper layer on the bottom; 13. a ceramic layer;
21. a first power chip; 22. a second power chip;
30. a sintered layer;
40. a power copper bar assembly; 41. a copper bar anode; 411. a first composition segment; 412. a second composition segment; 42. copper bar negative electrode;
421. a third group of segments; 422. a fourth component section; 43. a copper bar body; 431. a first copper bar body; 432. a second copper bar body; 44. a copper bar output electrode; 441. a fifth composition stage; 442. a sixth composition segment;
50. an insulating spacer;
60. the capacitor is pressed on the copper bar; 600. the spring plate is staggered; 61. crimping the positive electrode of the copper bar; 62. crimping the negative electrode of the copper bar;
70. cooling the bottom plate;
80. molding the body;
90. a transition copper sheet.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the accompanying drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Exemplary embodiments according to the present application will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art, in the drawings, it is possible to enlarge the thicknesses of layers and regions for clarity, and the same devices are denoted by the same reference numerals, and thus the description thereof will be omitted.
Referring to fig. 1 to 18, according to an embodiment of the present application, a power module is provided.
Specifically, as shown in fig. 1, the power module includes a ceramic substrate 10, a power copper bar assembly 40 and a transition copper sheet 90, the ceramic substrate 10 has a top copper-clad layer 11, the top copper-clad layer 11 includes a first copper-clad layer 111, a second copper-clad layer 112 and a third copper-clad layer 113, the first copper-clad layer 111 and the second copper-clad layer 112 are symmetrically disposed about the third copper-clad layer 113, the first copper-clad layer 111 is provided with a first power chip 21, and the second copper-clad layer 112 is provided with a second power chip 22. The power copper bar assembly 40 comprises a copper bar anode 41, a copper bar cathode 42 and a copper bar body 43, wherein the copper bar anode 41 is arranged between the first power chip 21 and the first copper covering layer 111, at least part of the copper bar body 43 is arranged on the third copper covering layer 113, and the first power chip 21 is electrically connected with the second power chip 22 through the copper bar body 43. The transition copper sheet 90 is arranged between the copper bar cathode 42 and the second power chip 22. The first power chip 21 and the copper bar anode 41, the copper bar cathode 42, the transition copper sheet 90 and the second power chip 22, the copper bar anode 41 and the first copper-clad layer 111, the second power chip 22 and the second copper-clad layer 112, and the copper bar body 43 and the third copper-clad layer 113 are connected through the sintering layer 30 of the sintering process.
By applying the technical scheme of the embodiment, the first copper-clad layer 111 of the copper-clad layer 11 on the top of the ceramic lining plate 10 is provided with the first power chip 21, the second copper-clad layer 112 is provided with the second power chip 22, at least part of the copper bar body 43 is arranged on the third copper-clad layer 113, the first power chip 21 is directly electrically connected with the second power chip 22 through the copper bar body 43, the transition copper sheet 90 is arranged between the copper bar cathode 42 and the second power chip 22, the first power chip 21 and the copper bar anode 41, the copper bar cathode 42, the transition copper sheet 90 and the second power chip 22, the copper bar anode 41 and the first copper-clad layer 111, the second power chip 22 and the second copper-clad layer 112, and the copper bar body 43 and the third copper-clad layer 113 are all connected through the sintered copper bar layer 30 of the sintering process, so that the copper bar assembly 40, the first power chip 21, the copper bar body and the third copper-clad layer 113 are improved, The connection reliability of the second power chip 22 and the connection reliability of the copper bar anode, the copper bar body, the first power chip 21, the second power chip 22 and the ceramic lining plate 10 are improved, and the current carrying capacity of the power module can be improved by the copper bar body 43 and the transition copper sheet 90, so that the heat capacity of the first power chip 21 and the second power chip 22 is increased, the transient performance output capacity of the first power chip 21 and the second power chip 22 is improved, and the problem of low power connection reliability in the power module in the prior art is solved.
The top surface of part of the copper bar anode 41 is connected with the bottom surface of the first power chip 21 through the sintering layer 30, the bottom surface of part of the copper bar anode 41 is connected with the first copper-clad layer 111 through the sintering layer 30, the bottom surface of part of the copper bar cathode 42 is connected with the top surface of the transition copper sheet 90 through the sintering layer 30, the bottom surface of the transition copper sheet 90 is connected with the top surface of the second power chip 22 through the sintering layer 30, the bottom surface of the second power chip 22 is connected with the second copper-clad layer 112 through the sintering layer 30, and the bottom surface of the copper bar body 43 is connected with the third copper-clad layer 113 through the sintering layer 30. The copper bar anode 41 and the first power chip 21 are improved, the connection reliability between the first copper-clad layers 111 is improved, the copper bar cathode 42 is improved, the transition copper sheet 90 is improved, the connection reliability between the second power chip 22 and the second copper-clad layers 112 is improved, the transition copper sheet 90 is arranged between the bottom surface of the copper bar cathode 42 and the top surface of the second power chip 22, the heat capacity of the second power chip 22 is further increased, the transient performance output capacity of the second power chip 22 is improved, and further the current carrying capacity of the power module is improved.
The copper bar body 43 comprises a first copper bar body 431 and a second copper bar body 432, the first copper bar body 431 is connected with the third copper covering layer 113 through the sintering layer 30, the first copper bar body 431 and the second copper bar body 432 are oppositely arranged, the second copper bar body 432 is connected with the third copper covering layer 113 through the sintering layer 30, and the first power chip 21 is electrically connected with the second power chip 22 through the first copper bar body 431 and the second copper bar body 432. Specifically, the first copper bar body 431, the second copper bar body 432, the first power chip 21 and the second power chip 22 are electrically connected according to a certain circuit topology, as shown in fig. 1, the first power chip 21 and the second power chip 22 realize a half-bridge circuit topology through the first copper bar body 431 and the second copper bar body 432. In this embodiment, the first power chip 21 is electrically connected to the second power chip 22 through the first copper bar body 431 and the second copper bar body 432, and the first power chip 21 and the second power chip 22 are respectively connected to the copper bar anode 41 and the copper bar cathode 42 in a sintering manner, so that the connection reliability between the copper bar anode 41 and the copper bar cathode 42 and the first power chip 21, and the connection reliability between the second power chip 21 and the first copper bar body 431 and the second copper bar body 432 are improved, the heat capacity and transient current output capability of the first power chip 21 and the second power chip 22 are further enhanced, and the current carrying capability of the power module is further enhanced, thereby solving the problem of high binding difficulty existing in the connection between the power terminal and the chip in the form of a binding strip in the prior art, and avoiding the problem of chip damage caused by the deformation of the binding strip.
The copper bar anode 41 comprises a first constituent segment 411 and a second constituent segment 412, wherein a first end of the first constituent segment 411 extends along the width direction of the ceramic lining plate 10, a first end of the second constituent segment 412 is connected with a second end of the first constituent segment 411, and a second end of the second constituent segment 412 extends along the length direction of the ceramic lining plate 10. The copper bar negative electrode 42 includes a third component 421 and a fourth component 422, a second end of the third component 421 extends along the width direction of the ceramic lining board 10, the third component 421 is overlapped on the first component 411, a first end of the fourth component 422 is connected to a first end of the third component 421, a second end of the fourth component 422 extends along the length direction of the ceramic lining board 10, and the fourth component 422 and the second component 412 are symmetrically disposed with respect to the third copper-clad layer 113. The first composition section 411 of the copper bar anode 41 and the third composition section 421 of the copper bar cathode 42 are arranged in a laminated manner, so that the parasitic inductance of the power module is effectively reduced, the working voltage allowance of the power module is effectively improved, and the output performance and the working safety of the power module are improved.
As shown in fig. 2 and 3, the copper bar anode 41 and the first copper-clad layer 111 are connected by the sintering layer 30 of the sintering process, and the copper bar anode 41 needs to be subjected to zigzag bending pretreatment, the first composition section 411 of the copper bar anode 41 serves as an anode input end of the power module, the second composition section 412 of the copper bar anode 41 is connected with the first power chip 21, and for the IGBT power chip, the second composition section 412 is a collector of the IGBT power chip. Wherein the copper bar anode 41 is usually made of oxygen-free copper with high conductivity.
As shown in fig. 2 and 4, the copper bar cathode 42 is connected to the top surface of the transition copper sheet 90 through the sintering layer 30 of the sintering process, the copper bar cathode 42 needs to be subjected to zigzag bending pretreatment, the third formation section 421 of the copper bar cathode 42 serves as the cathode input end of the power module, the fourth formation section 422 of the copper bar cathode 42 is connected to the second power chip 22, and for the IGBT power chip, the fourth formation section 422 is the emitter of the IGBT power chip. Wherein the copper bar negative electrode 42 is typically made of oxygen-free copper with high conductivity.
The power copper bar assembly 40 further includes a copper bar output electrode 44, a portion of the copper bar output electrode 44 is connected to the third copper-clad layer 113 through the sintering layer 30, and a portion of the copper bar output electrode 44 is electrically connected to the second and fourth constituent segments 412 and 422. Further, the copper bar output electrode 44 further includes a fifth component segment 441 and a sixth component segment 442, the fifth component segment 441 is connected to the third copper-clad layer 113 through the sintering layer 30 of the sintering process, the fifth component segment 441 is electrically connected to the second component segment 412 and the fourth component segment 422, a first end of the fifth component segment 441 extends along the length direction of the ceramic substrate 10, a middle portion of the sixth component segment 442 is connected to a second end of the fifth component segment 441, the sixth component segment 442 is used for being connected to a power load, and the sixth component segment 442 extends along the width direction of the ceramic substrate 10. In the present embodiment, the fifth component section 441 of the copper bar output electrode 44 is electrically connected to the second component section 412 and the fourth component section 422, for the IGBT power chip, that is, the fifth component section 441 of the copper bar output electrode 44 is electrically connected to the collector and the emitter of the IGBT power chip, and the sixth component section 442 is led out as the output electrode of the IGBT power chip and is connected to the power load. The bottom surface of the fifth component section 441 is connected to the top surface of the third copper-clad layer 113 through the sintering layer 30 of the sintering process, and the copper bar output electrode 44 needs to be subjected to zigzag bending pretreatment, as shown in fig. 2 and 3. The copper bar output electrode 44 is typically made of oxygen free copper with high conductivity. Therefore, the connection reliability between the copper bar output electrode 44 and the third copper-clad layer 113 can be improved, and the connection reliability between the copper bar output electrode 44 and the copper bar anode 41 and the copper bar cathode 42 is improved.
The power module further includes an insulating gasket 50, and the insulating gasket 50 is disposed between the first constituent segment 411 and the third constituent segment 421. The electric isolation between the positive electrode 41 of the copper bar and the negative electrode 42 of the copper bar is realized through the insulating gasket 50, and the working safety of the power module is further improved.
As shown in fig. 15, the power module further includes a capacitor crimping copper bar 60, the capacitor crimping copper bar 60 includes a crimping copper bar anode 61 and a crimping copper bar cathode 62, the crimping copper bar anode 61 is connected with the first constituent segment 411 through the staggered-tooth elastic piece 600 in the capacitor crimping copper bar 60 in a crimping manner, and the crimping copper bar anode 61 is disposed below the first constituent segment 411, the crimping copper bar cathode 62 is connected with the third constituent segment 421 through the staggered-tooth elastic piece 600 in a crimping manner, and the crimping copper bar cathode 62 is disposed above the third constituent segment 421. The arrangement enables the copper bar anode 41 and the copper bar cathode 42 which are separated by the insulating gasket 50 in the middle to realize power transfer through the compression joint of the capacitor compression joint copper bar 60, further reduces the parasitic inductance of the power module, reduces the bolt connection process and procedure of the power module in practical application, and improves the production efficiency of the power module. In this embodiment, the staggered-tooth elastic piece 600 is a wave-shaped elastic piece with resilience, and the wave-shaped elastic piece and the capacitor compression-joint copper bar 60 can be connected by soldering, ultrasonic bonding, sintering and the like.
The power module further comprises a cooling bottom plate 70, the cooling bottom plate 70 being connected to the bottom copper clad layer 12 of the ceramic backing plate 10 by means of the sintering layer 30 of the sintering process. Therefore, the reliability of the connection between the cooling base plate 70 and the ceramic lining plate 10 can be improved, the auxiliary heat dissipation of the first power chip 21 and the second power chip 22 can be realized, the heat dissipation areas of the first power chip 21 and the second power chip 22 are increased, and the heat dissipation efficiency of the first power chip 21 and the second power chip 22 is improved.
In one embodiment of the present application, the ceramic backing plate 10 further has a ceramic layer 13, the power module further includes a plastic package body 80, and when the second composition section 412 is connected to the first power chip 21, the first copper-clad layer 111, the fourth composition section 422 is connected to the transition copper sheet 90, the second power chip 22, the second copper-clad layer 112, the copper bar body 43, the fifth composition section 441 and the third copper-clad layer 113 through the sintering layer 30 of the sintering process, they are protected by the plastic package body 80, and the first composition section 411, the third composition section 421, the sixth composition section 442 and part of the cooling bottom plate 70 are located outside the plastic package body 80. The sintering raw materials in the sintering process generally adopt high-thermal-conductivity materials such as silver powder, silver paste, silver films, copper powder, copper films and the like.
The power module in the above embodiment may also be applied to the technical field of vehicles, that is, according to another specific embodiment of the present application, there is also provided a vehicle including the power module in the above embodiment. By adopting the power module in the embodiment, the ultralow stray inductance of the power module is realized, the working safety of the power module is enhanced, the high-performance output of the power module is realized while the working redundancy is reduced, the bolt connection process and the working procedure of the power module in practical application are reduced, the production efficiency is improved, and therefore, the power module is applied to a vehicle, and the performance of the vehicle and the production efficiency of the vehicle can also be improved.
In practical applications of the power module of the present application, the first power chip 21 and the second power chip 22 may be in a half-bridge circuit topology or in a full-bridge circuit topology according to actual needs.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
In addition to the foregoing, it should be noted that reference throughout this specification to "one embodiment," "another embodiment," "an embodiment," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment described generally throughout this application. The appearances of the same phrase in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the scope of the invention to effect such feature, structure, or characteristic in connection with other embodiments.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A power module, comprising:
the ceramic substrate (10) is provided with a top copper-clad layer (11), the top copper-clad layer (11) comprises a first copper-clad layer (111), a second copper-clad layer (112) and a third copper-clad layer (113), the first copper-clad layer (111) and the second copper-clad layer (112) are symmetrically arranged relative to the third copper-clad layer (113), the first copper-clad layer (111) is provided with a first power chip (21), and the second copper-clad layer (112) is provided with a second power chip (22);
the power copper bar assembly (40) comprises a copper bar anode (41), a copper bar cathode (42) and a copper bar body (43), the copper bar anode (41) is arranged between the first power chip (21) and the first copper-clad layer (111), at least part of the copper bar body (43) is arranged on the third copper-clad layer (113), and the first power chip (21) is electrically connected with the second power chip (22) through the copper bar body (43);
the transition copper sheet (90) is arranged between the copper bar cathode (42) and the second power chip (22), wherein the first power chip (21) and the copper bar anode (41), the copper bar cathode (42), the transition copper sheet (90) and the second power chip (22), the copper bar anode (41) and the first copper-clad layer (111), the second power chip (22) and the second copper-clad layer (112), and the copper bar body (43) and the third copper-clad layer (113) are connected through a sintering layer (30) of a sintering process.
2. The power module of claim 1,
the top surface of part of the copper bar anode (41) is connected with the bottom surface of the first power chip (21) through the sintering layer (30), the bottom surface of part of the copper bar anode (41) is connected with the first copper-clad layer (111) through the sintering layer (30), the bottom surface of part of the copper bar cathode (42) is connected with the top surface of the transition copper sheet (90) through the sintering layer (30), the bottom surface of the transition copper sheet (90) is connected with the top surface of the second power chip (22) through the sintering layer (30), the bottom surface of the second power chip (22) is connected with the second copper-clad layer (112) through the sintering layer (30), and the bottom surface of the copper bar body (43) is connected with the third copper-clad layer (113) through the sintering layer (30).
3. The power module according to claim 2, wherein the copper bar body (43) comprises:
a first copper bar body (431), wherein the first copper bar body (431) is connected with the third copper-clad layer (113) through the sintering layer (30);
the second copper bar body (432), the first copper bar body (431) with the second copper bar body (432) set up relatively, the second copper bar body (432) pass through the sintering layer (30) with the third covers copper layer (113) and is connected, first power chip (21) pass through the first copper bar body (431), second copper bar body (432) with second power chip (22) electric connection.
4. The power module of claim 1,
the copper bar positive electrode (41) includes:
a first constituent segment (411), a first end of the first constituent segment (411) extending along a width direction of the ceramic lining plate (10);
a second assembly section (412), wherein a first end of the second assembly section (412) is connected with a second end of the first assembly section (411), and a second end of the second assembly section (412) extends along the length direction of the ceramic lining plate (10);
the copper bar negative electrode (42) includes:
a third component (421), a second end of the third component (421) extends along the width direction of the ceramic lining board (10), and the third component (421) is overlapped on the first component (411);
a fourth component (422), a first end of the fourth component (422) is connected to a first end of the third component (421), a second end of the fourth component (422) extends along a length direction of the ceramic lining plate (10), and the fourth component (422) and the second component (412) are symmetrically arranged with respect to the third copper-coated layer (113).
5. The power module of claim 4, wherein the power copper bar assembly (40) further comprises:
and part of the copper bar output electrodes (44) are connected with the third copper-coated layer (113) through the sintering layer (30), and part of the copper bar output electrodes (44) are electrically connected with the second component section (412) and the fourth component section (422).
6. The power module of claim 5, wherein the copper bar output pole (44) further comprises:
a fifth composition section (441), wherein the fifth composition section (441) is connected with the third copper-clad layer (113) through a sintering layer (30) of a sintering process, the fifth composition section (441) is electrically connected with the second composition section (412) and the fourth composition section (422), and a first end of the fifth composition section (441) extends along the length direction of the ceramic lining plate (10);
a sixth constituent segment (442), a middle portion of the sixth constituent segment (442) being connected to the second end of the fifth constituent segment (441), the sixth constituent segment (442) being for connection to a power load, and the sixth constituent segment (442) being disposed to extend in a width direction of the ceramic sheathing board (10).
7. The power module of claim 4, further comprising:
an insulating gasket (50), the insulating gasket (50) being disposed between the first constituent segment (411) and the third constituent segment (421).
8. The power module of claim 4, further comprising:
electric capacity crimping copper bar (60), electric capacity crimping copper bar (60) are including positive (61) of crimping copper bar and crimping copper bar negative pole (62), positive (61) of crimping copper bar passes through wrong tooth shell fragment (600) in electric capacity crimping copper bar (60) with first group becomes section (411) crimping and connects, just positive (61) of crimping copper bar set up in the below of first group becomes section (411), crimping copper bar negative pole (62) pass through wrong tooth shell fragment (600) with third group becomes section (421) crimping and connects, just crimping copper bar negative pole (62) set up in the top of third group becomes section (421).
9. The power module of claim 1, further comprising:
the cooling bottom plate (70) is connected with the copper-clad layer (12) at the bottom of the ceramic lining plate (10) through a sintering layer (30) of a sintering process.
10. A vehicle, characterized in that the vehicle comprises a power module according to any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210547213.0A CN114975387A (en) | 2022-05-19 | 2022-05-19 | Power module and vehicle with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210547213.0A CN114975387A (en) | 2022-05-19 | 2022-05-19 | Power module and vehicle with same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114975387A true CN114975387A (en) | 2022-08-30 |
Family
ID=82986118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210547213.0A Pending CN114975387A (en) | 2022-05-19 | 2022-05-19 | Power module and vehicle with same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114975387A (en) |
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2022
- 2022-05-19 CN CN202210547213.0A patent/CN114975387A/en active Pending
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