CN114388456A - Power electronic switching device with heat conducting device and production method thereof - Google Patents

Power electronic switching device with heat conducting device and production method thereof Download PDF

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Publication number
CN114388456A
CN114388456A CN202111214252.0A CN202111214252A CN114388456A CN 114388456 A CN114388456 A CN 114388456A CN 202111214252 A CN202111214252 A CN 202111214252A CN 114388456 A CN114388456 A CN 114388456A
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China
Prior art keywords
switching device
power semiconductor
semiconductor component
heat conducting
substrate
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CN202111214252.0A
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Chinese (zh)
Inventor
斯特凡·厄尔林
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Semikron Electronics Co ltd
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Semikron Electronics Co ltd
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Publication of CN114388456A publication Critical patent/CN114388456A/en
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A power electronic switching device with a heat conducting means and a method for the production thereof are disclosed, which power electronic switching device has a substrate with a normal direction and with a first and a second conductor track, wherein a power semiconductor component is arranged on the first conductor track by means of an electrically conductive connection, wherein the power semiconductor component has a lateral circumference and has on its first main side facing away from the substrate an edge region and a contact region with a connection means and a heat conducting means, which connection means is electrically conductively connected to a contact region of the contact region, which heat conducting means forms an electrically insulating, highly heat conducting connection between the connection means and the substrate.

Description

Power electronic switching device with heat conducting device and production method thereof
Technical Field
The invention relates to a power electronic switching device having a substrate with a first and a second conductor track, wherein a power semiconductor component is arranged on the first conductor track by means of an electrically conductive connection, wherein the power semiconductor component has a lateral circumference and has an edge region and a contact region on its first main side facing away from the substrate, the contact region having a connection means and having a heat-conducting means, the connection means being electrically conductively connected to a contact region of the contact region. The invention also describes a method for producing such a switching device.
Background
A common requirement for power electronic switching devices and power semiconductor modules formed therewith is that all components which heat up or heat up during operation are sufficiently cooled, i.e. without any negative impact on lifetime and performance.
DE 102015116165 a1 discloses as prior art a method for producing power electronic switching devices. In this case, the power semiconductor component is arranged on the first region of the conductor track of the substrate. The insulating film is then provided with a cut, wherein an overlapping region of the insulating film adjacent to the cut is designed to overlap an edge region of the power semiconductor component. Then, the insulating film is arranged on the substrate with the power semiconductor component arranged such that the power semiconductor component is overlapped in its edge region, all around by an overlapping region of the insulating film, wherein the other section of the insulating film overlaps with part of one of the conductor tracks. Finally, the connecting means are arranged.
Disclosure of Invention
The invention is based on the object of improving the cooling of the internal connections of power electronic switching devices, in particular in the immediate vicinity of the power semiconductor components, and to specify a method for producing such a power electronic switching device.
According to the invention, this object is achieved by a power electronic switching device having a substrate which has a normal direction and has a first and a second conductor track, wherein a power semiconductor component is arranged on the first conductor track by means of an electrically conductive connection, wherein the power semiconductor component has a lateral circumference and has, on its first main side facing away from the substrate, an edge region and a contact region, the contact region having a connection means which is electrically conductively connected to a contact region of the contact region, and a heat-conducting means which forms an electrically insulating, highly heat-conducting connection between the connection means and the substrate.
It may be advantageous that the heat conducting means is in heat conducting contact with the second conductor trace and preferably also with the first conductor trace.
It may be preferred that the heat conducting means is arranged laterally spaced from the power semiconductor component when viewed from the normal direction.
In principle, it may be preferred that the connecting means is in the form of a bonding wire, in the form of a rigid metal molded body or in the form of an electrically conductive film, preferably a metal film, for the component parts of the electrically conductive film, preferably as part of a film stack, which is formed alternately by electrically conductive films and at least one electrically insulating film. The term bonding line is also intended to be understood to include bonding tapes, in particular according to the prior art.
Likewise, it may be preferred that the first insulating material is arranged at the edge of the power semiconductor component and partly also at adjacent sections of the edge region.
It is particularly advantageous if the heat-conducting device is in the form of a rigid insulating molded body having a first contact area and a second contact area opposite the first contact area, or if the heat-conducting device is in the form of a second elastic, preferably gel-like, insulating material which is adhesive during its arrangement.
In this case, the rigid insulating molded body may have a thickness that differs by no more than 25%, preferably by no more than 10%, from the thickness of the adjacent power semiconductor component, or the rigid insulating molded body may have a thickness that differs by no more than 25%, preferably by no more than 10%, from three times the thickness of the adjacent power semiconductor component.
Preferably, the rigid insulating molded body has a thermal conductivity of more than 100W/m-K, preferably more than 140W/m-K, and is preferably formed from silicon or aluminum nitride or silicon carbide or boron nitride or from zinc oxide or diamond, or contains these materials to an extent of more than 30%, in particular more than 50%.
It is further preferred that the rigid insulating molded body has a rectangular parallelepiped shape, wherein preferably a maximum longitudinal side of the rigid insulating molded body is not longer than 1.5 times a maximum longitudinal side of an adjacent power semiconductor component.
Preferably, the second insulating material has a thermal conductivity in excess of 2.5W/m-K, preferably in excess of 5W/m-K, and is preferably formed from a silicone gel having a particulate mixture of aluminium nitride or silicon carbide or boron nitride or zinc oxide or diamond.
The second insulating material 40 may be disposed adjacent to or spaced apart from the first insulating material 80.
With the described configuration and its variants, the cooling of the internal connections of the power electronic switching device, in particular in the immediate vicinity of the power semiconductor components, is significantly improved, and thus the current carrying capacity is increased or the load is reduced, and thus the service life of the power electronic switching device is increased.
Furthermore, the object is achieved by a method for producing a power electronic switching device according to one of the above-mentioned claims, having the following method steps in the order a-b-c-d-e or a-b-d-c-e:
a) providing the substrate;
b) arranging the power semiconductor component and the heat conducting means in the form of a rigid insulating molded body;
c) forming a material bond connection between the power semiconductor component and the associated conductor trace of the substrate and between the heat conducting means and the associated conductor trace of the substrate;
d) arranging the connecting device;
e) a force-fit connection or a material-bonded connection is formed between the power semiconductor component and the connecting device and between the heat conducting device and the connecting device, respectively.
It can be advantageous to carry out the following method steps before method step d): a first gel-like insulating material is arranged on the edge region of the power semiconductor component.
Of course, features mentioned in the singular, in particular heat-conducting means or power semiconductor components, can also be provided in the power electronic switching device according to the invention in the plural if this is not per se excluded or explicitly excluded.
It is understood that the various configurations of the present invention, whether disclosed as part of the description of the power electronic switching device or of the method of producing it, can be implemented individually or in any desired combination to achieve improvements. In particular, the features mentioned above and explained below can be implemented not only in the specified combinations but also in other combinations or individually without departing from the scope of the invention.
Drawings
Further explanations, advantageous details and features of the invention emerge from the following description relating to exemplary embodiments of the invention, which are schematically illustrated in fig. 1 to 9 or corresponding parts thereof.
Fig. 1 shows a side view of a power electronic switching device according to the prior art.
Fig. 2 to 7 each show a side view of a configuration according to the invention of a power electronic switching device.
Fig. 8 shows a plan view of an exemplary power semiconductor component for further explanation.
Fig. 9 shows a plan view of an arrangement similar to that of fig. 6.
Detailed Description
Fig. 1 shows a side view of a part of a power electronic switching device 1 according to the prior art. The switching device 1 has a substrate 2 which has an insulator 20 and on which a first and a second conductor track 22, 24 are arranged. The power semiconductor component 5 is arranged on the first conductor track 22 of the substrate 2 and is electrically conductively connected thereto with its contact region facing the first conductor track 22. Without any general limitation, the conductive connection 900 is in this case in the form of a material-bonded pressure-sintered joint.
The power semiconductor component 5, more precisely one of its contact regions facing away from the substrate 2 in the normal direction N of the substrate, is connected to the second conductor track 24 of the substrate 2 by means of the connection means 3. The connecting means 3 is in the form of a film composite 32 which is composed of a first electrically conductive film 320 facing the substrate 2, an electrically insulating film 322 following in the film composite and a further following second electrically conductive film 324 in the film composite.
The power electronic switching device 1 also has a terminal element 6, which is shown here as an auxiliary terminal element for conducting an auxiliary potential (for example, a sensor or a drive signal), but can also be a load terminal element (not shown). The terminal elements 6 are shown in the form of press pin contact elements common in the art. The base of the terminal element 6 is arranged in a sleeve which has a bonded material connection which is connected to a contact section on the surface of the first conductive film 320 facing away from the substrate 2. As is common in the art, the terminal element may also be arranged directly on one of the conductor tracks. In this case, the terminal elements pass through the housing 7 of the power semiconductor module to the outside and form the external connection of the power electronic switching device 1 inside the power semiconductor module.
The first conductive film 320 is connected to the second conductor track 24 of the substrate 2 by a material-bonded and electrically conductive connection 900, in this case in the form of a pressure-sintered joint common in the art.
Fig. 2 to 7 each show a side view of the configuration of a power electronic switching device 1 according to the invention. The substrate 2 together with the power semiconductor component 5 arranged thereon and conductively connected thereto corresponds to the prior art as described with reference to fig. 1. Referring also to fig. 8, the power semiconductor component 5 has a lateral periphery 50 and, on its first main side 500 facing away from the substrate 2, an edge region 52 and a contact region 54. The respective connection means 3 (as will be indicated below) are conductively connected to the contact region 540 of the contact region 54.
Fig. 2 again shows a connection device 3 in the form of a rigid metal molded body 30 common in the art, which has been used for many years in the form of a copper bow in power semiconductor modules and thus also in these developing power electronic switching devices. Furthermore, common in the art is a first insulating material 80 which is present at the edge 50 and also partly at a section of the edge region 52 of the power semiconductor component 5 adjacent to said edge. The purpose of this first insulating material 80 is to electrically insulate the interior of the switchgear 1 with respect to voltage flashovers.
According to the invention, heat conducting means 4, here in the form of a second insulating material 40, is arranged between the connecting means 3 and the substrate 2. It goes without saying that the second insulating material 40 is here in thermally conductive contact with both the connection means and the substrate. The second insulating material 40 has a thermal conductivity of about 10W/m-K and is formed of a silica gel (in this case, without any general limitation, a mixture of silicon carbide) with a granular mixture.
The second insulating material 40 is arranged after the first insulating material 80 in the production process and partially overlaps the surface of said insulating material 80. Both insulating materials 40, 80 are adhesive when they are arranged and, once they have been arranged, they are thermally cured or optically cured, preferably by ultraviolet light, to form a gel-like final state of the insulating materials.
Fig. 3 shows a power electronic switching device 1 which, apart from the design of the heat conducting device 4, is in principle identical to the power electronic switching device shown in fig. 2. Here, however, the heat conducting means 4 is still in the form of a rigid insulating molded body 42 having a thermal conductivity of about 120W/m · K and, without any general limitation, being formed of silicon carbide.
The rigid insulating molding 42 is connected by its first contact region and a second contact region opposite the first contact region to both the connection device 3 and the first conductor track 22 in a material-bonded and thermally conductive manner. The corresponding connection 900 is in this case in the form of a soldered joint. In this configuration, unlike the configuration shown in fig. 2, there is only a thermally conductive connection to the first conductor track 22 and not to the second conductor track 24 of the substrate 2.
The thickness of the rigid insulating molded body 42 of this exemplary embodiment corresponds to three times the thickness of the adjacent power semiconductor component 5. Thus, an excellent compromise is reached between the distance between the connection means 3 and the first conductor tracks 22 and the efficiency of the heat dissipation from the connection means 3.
Fig. 4 shows a power electronic switching device 1 which, apart from the configuration of the connecting device 3, is in principle identical to the power electronic switching device shown in fig. 2. In this case, the connecting means 3 is likewise of a usual form in the art, in the form of a film stack 32 having two electrically conductive films and one electrically insulating film arranged therebetween. The first and second conductive films 320, 324 of this film composite each have a thickness of 200 μm, and the electrically insulating film 322 has a thickness of 80 μm.
The heat conducting means 4 is again in the form of a second elastic insulating material 40 which is viscous during its arrangement and in this case forms a highly heat conducting, but electrically insulating connection between the connecting means 3, in this case the first electrically conductive film 320 of the connecting means, and the first and second conductor tracks 22, 24 and thus the substrate 2.
Fig. 5 shows a power electronic switching device 1 which, apart from the design of the heat conducting device 4, is in principle identical to the power electronic switching device shown in fig. 4. Here, the thermally conductive means 4 is in the form of a rigid insulator 42 having a thermal conductivity of about 180W/m · K. The rigid insulating molded body 42 is connected to the connecting means 3 and the first and second conductor tracks 22, 24 in a material-bonded, electrically insulating and thermally conductive manner. The corresponding connection 900 is in this case in the form of a pressure sintered joint.
Here, the thickness of the rigid insulating molded body 42 corresponds approximately to three times the thickness of the adjacent power semiconductor component 5.
Fig. 6 again shows a power electronic switching device 1 which, apart from the arrangement and geometry of the heat-conducting device 4, is in principle identical to the power electronic switching device shown in fig. 5. A similar distinguishing feature, but not relevant to the present invention, is the extent of the first insulating material 80, which in this case extends beyond the edge of the first conductor trace 22 until reaching the second conductor trace 24.
The heat-conducting means 4 again takes the form of a rigid insulating molded body 42 having a first contact region and a second contact region opposite said first contact region and having a thickness in this case corresponding to the thickness of the adjacent power semiconductor component 5. In this case, the rigid insulating molded body 42 is connected only thermally conductively to the second conductor track 24 of the substrate 2 and to the connection device 3. The corresponding connection 900 is again in the form of a pressure sintered joint. Alternatively, at least one of the two connections can also be in the form of a force-fit connection. In this case, the press body 70 (shown by a dashed line) will press onto the connecting device 3 from the normal direction N and thereby form a force-fit connection.
Fig. 7 shows a power electronic switching device 1 which, apart from the configuration of the connecting device 3, is in principle identical to the power electronic switching device shown in fig. 2. In this case, the connecting means 3 are in the form of a bonding wire, as is common in the art, and preferably in the form of a bonding tape 34, as is common in the art, due to the large contact area.
Furthermore, in this case, the second insulating material 40 not only overlaps the first insulating material 80, but also overlaps the power semiconductor component 5 when viewed in projection and is therefore not laterally spaced from the power semiconductor component as in the previously described exemplary embodiments again in projection, i.e. when viewed from the normal direction N.
For further explanation, fig. 8 shows a plan view of an exemplary power semiconductor component 5. The power semiconductor component 5 has a lateral periphery 50 and, on its first main side 500 facing away from the substrate 2, an edge region 52 and a contact region 54. In this case, the contact region has two contact regions 540, 542. One of these contact areas forms a load terminal contact area and one contact area forms a gate contact area.
Around the edge region 52 and the contact region 54 of the power semiconductor component 5, the edge structure of the power semiconductor component is shown. Referring to fig. 9, the edge region 52 and thus also the edge structure is preferably at least partially overlapped by the first insulating material 80. It may be advantageous for the first insulating material 80 to also overlap the narrow edge section of the contact region 54.
Fig. 9 shows an arrangement similar to the arrangement in fig. 6 in a plan view. Shown here is the power semiconductor component 5 as shown in fig. 8, wherein a first insulating material 80 is arranged and a cuboid-shaped rigid insulating molding 42 is laterally spaced apart therefrom. The lateral spacing 420 is preferably at most three times the length of the larger longitudinal side 502 of the power semiconductor component 5. The length of the larger of the two longitudinal sides 422 of the insulating molded body 42 corresponds to 1.4 times the length of the power semiconductor component 5 (square in this case).

Claims (13)

1. A power electronic switching device (1), the power electronic switching device (1) having a substrate (2), the substrate (2) having a normal direction (N) and having a first and a second conductor track (22, 24), wherein a power semiconductor component (5) is arranged on the first conductor track (22) by means of an electrically conductive connection (900), wherein the power semiconductor component (5) has a lateral circumferential edge (50) and on its first main side (500) facing away from the substrate (2) an edge region (52) and a contact region (54) with a connecting means (3) and a heat conducting means (4), the connecting means (3) being electrically conductively connected to a contact region (540) of the contact region (54), the heat conducting means forming an electrically insulating, between the connecting means (3) and the substrate (2), A highly thermally conductive connection.
2. The switching device of claim 1,
the heat conducting means (4) is in heat conducting contact with the second conductor trace (24) and preferably also with the first conductor trace (22).
3. The switching device according to one of claims 1-2,
the heat conducting means (4) is arranged laterally spaced apart from the power semiconductor component (5) when viewed from the normal direction (N).
4. The switching device according to one of claims 1-2,
the connecting means (3) is in the form of a bonding wire (34), in the form of a rigid metal molded body (30) or in the form of a conductive film (320), preferably a metal film (320), for the component parts of which it is preferred as part of a film stack (32), the film stack (32) being formed alternately of conductive films and at least one electrically insulating film (320, 322, 324).
5. The switching device according to one of claims 1-2,
a first insulating material (80) is arranged at the edge (50) of the power semiconductor component (5) and partly also at an adjacent section of the edge region (52).
6. The switching device according to one of claims 1-2,
the heat-conducting device (4) is in the form of a rigid insulating molded body (42), the rigid insulating molded body (42) having a first contact area and a second contact area opposite the first contact area, or the heat-conducting device is in the form of a second elastic, preferably gel-like insulating material (40) which is viscous during its arrangement.
7. The switching device of claim 6,
the rigid insulating molded body (42) has a thickness which differs by no more than 25%, preferably by no more than 10%, from the thickness of the adjacent power semiconductor component (5), or the rigid insulating molded body (42) has a thickness which differs by no more than 25%, preferably by no more than 10%, from three times the thickness of the adjacent power semiconductor component (5).
8. The switching device of claim 6,
the rigid insulating molded body (42) has a thermal conductivity of more than 100W/m.K, preferably more than 140W/m.K, and is preferably formed from silicon or aluminum nitride or silicon carbide or boron nitride or from zinc oxide or diamond, or contains these materials to an extent of more than 30%, in particular more than 50%.
9. The switching device of claim 6,
the rigid insulation molded body (42) has a rectangular parallelepiped shape, and preferably, a maximum longitudinal side (422) of the rigid insulation molded body (42) is not longer than 1.5 times a maximum longitudinal side (502) of the adjacent power semiconductor component (5).
10. The switching device of claim 6,
the second insulating material (40) has a thermal conductivity of more than 2.5W/m-K, preferably more than 5W/m-K, and is preferably formed from a silicon gel having a particulate mixture of aluminium nitride or silicon carbide or boron nitride or zinc oxide or diamond.
11. The switching device according to claim 5, wherein the heat conducting means (4) is in the form of a rigid insulating molding (42), the rigid insulating molding (42) having a first contact area and a second contact area opposite the first contact area, or the heat conducting means is in the form of a second elastic, preferably gel-like insulating material (40) which is viscous during its arrangement, and wherein the second insulating material (40) is arranged adjacent to the first insulating material (80) or spaced apart from the first insulating material (80).
12. Method for producing a power electronic switching device (1) according to one of the preceding claims, having the following method steps in the order a-b-c-d-e or a-b-d-c-e:
a) -providing the substrate (2);
b) -arranging said power semiconductor component (5) and said heat conducting means (4) in the form of a rigid insulating molded body (42);
c) -forming a material-bonded connection between the power semiconductor component (5) and the associated conductor track (22, 24) of the substrate (2) and between the heat-conducting means (4) and the associated conductor track (22, 24) of the substrate (2);
d) -arranging said connection means (3);
e) a non-positive connection or a material-bonded connection is formed between the power semiconductor component (5) and the connecting device (3) and between the heat conducting device (4) and the connecting device (3), respectively.
13. The method of claim 12, wherein,
prior to method step d), the following method steps are carried out:
a first gel-like insulating material (80) is arranged on the edge region (52) of the power semiconductor component (5).
CN202111214252.0A 2020-10-20 2021-10-19 Power electronic switching device with heat conducting device and production method thereof Pending CN114388456A (en)

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JP4794822B2 (en) 2004-03-24 2011-10-19 三菱電機株式会社 Power semiconductor device
JP2006206721A (en) 2005-01-27 2006-08-10 Kansai Electric Power Co Inc:The Highly heat-resistant synthetic polymer compound and semiconductor device of high dielectric strength coated with the same
DE102015116165A1 (en) 2015-09-24 2017-03-30 Semikron Elektronik Gmbh & Co. Kg Method for producing a power electronic switching device and power electronic switching device

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