CN114955979A - Differential capacitance type cilium hydrophone and manufacturing method thereof - Google Patents

Differential capacitance type cilium hydrophone and manufacturing method thereof Download PDF

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Publication number
CN114955979A
CN114955979A CN202210525262.4A CN202210525262A CN114955979A CN 114955979 A CN114955979 A CN 114955979A CN 202210525262 A CN202210525262 A CN 202210525262A CN 114955979 A CN114955979 A CN 114955979A
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China
Prior art keywords
layer
hydrophone
metal layer
nth
dielectric layer
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CN202210525262.4A
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Chinese (zh)
Inventor
王任鑫
张文栋
李照东
张国军
何常德
杨玉华
崔建功
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North University of China
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North University of China
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Priority to CN202210525262.4A priority Critical patent/CN114955979A/en
Publication of CN114955979A publication Critical patent/CN114955979A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

The invention provides a differential capacitive cilium hydrophone and a manufacturing method thereof, belonging to the technical field of manufacturing of underwater sonar sensors. The differential capacitance type cilium hydrophone structure comprises ciliums, a connecting beam, a central connecting body, an upper electrode, a passivation layer, a dielectric layer, a lower electrode, a basal layer and the like; the preparation method comprises the steps of using a COMS-MEMS monolithic integration process, arranging a device structure on a rear end layer of the COMS process, integrating a circuit signal processing electronic layer below the device structure, and connecting metal layers through a metal tungsten plug. The differential capacitance type cilium hydrophone prepared by the COMS-MEMS monolithic integration process has the advantages of good consistency, integration, wide frequency band, high sensitivity, easiness in packaging, capability of batch production and the like.

Description

Differential capacitance type cilium hydrophone and manufacturing method thereof
Technical Field
The invention relates to the technical field of CMOS-MEMS integrated sensor manufacturing, in particular to a differential capacitance type cilium hydrophone and a preparation method thereof.
Background
At present, sound waves are the only carrier capable of carrying out long-distance information transmission underwater, and the underwater sound technology is mainly adopted for ocean exploration and research. The hydrophone receives the sound wave signal through the core functional element, converts the sound wave signal into an electric signal, and then amplifies and transmits the electric signal. The traditional hydrophone has the defects of large volume, poor consistency, high cost and the like, and the differential capacitance type cilia hydrophone manufactured by integrating the CMOS-MEMS technology has the advantages of wide frequency band, high sensitivity, miniaturization, integration, good consistency, mass production and the like. Therefore, the development of a CMOS-MEMS based hydrophone with a novel structure and a novel manufacturing method is urgently needed to meet the requirements of the industry at present.
Disclosure of Invention
The invention aims to provide a hydrophone structure based on CMOS-MEMS integration, in particular to a differential capacitive ciliated hydrophone.
The invention is realized by the following technical scheme:
a differential capacitance type cilium hydrophone comprises a basal layer, wherein a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, an n-1 dielectric layer, an n-1 metal layer, an n-dielectric layer, an n-metal layer, a polycrystalline silicon layer and a passivation layer are sequentially arranged on the basal layer from bottom to top, and n is more than or equal to 3; a cavity is formed on the nth dielectric layer in an etching mode, the nth metal layer is arranged at the top of the cavity, the (n-1) th metal layer is arranged at the bottom of the cavity, the nth metal layer at the top of the cavity forms an upper electrode layer, a central connecting body located in the central position and four connecting beams connected to the periphery of the central connecting body are formed on the nth metal layer, the polycrystalline silicon layer and the passivation layer, cilia are vertically fixed on the central connecting body, and upper electrodes are distributed on the four connecting beams; the adjacent metal layers are interconnected through tungsten plugs, the nth metal layer serves as an upper electrode layer and is provided with electrode welding spots, the (n-1) th metal layer serves as a lower electrode layer, and the (n-2) th metal layer serves as an electron layer.
According to the preferable technical scheme, the base layer is made of silicon, the dielectric layer is made of silicon oxide, the metal layer is made of aluminum, the passivation layer is made of silicon nitride, the cilia body is made of silicon, glass or resin, the cilia body is cylindrical or cuboid, and the cavity is cuboid.
Preferably, the base layer is a silicon wafer, the silicon wafer is a lightly doped P-type (100) silicon wafer, and the typical doping concentration is N A ≈10 15 cm -3 。
Preferably, the electronic layer is provided with a CMOS signal processing circuit.
Further, the invention also provides a preparation method of the differential capacitance type cilium hydrophone, which comprises the following steps:
step 1: selecting a silicon wafer as an initial substrate layer, and completing the manufacture of a CMOS active region, an n-layer dielectric layer and an n-layer metal layer on the substrate layer by utilizing a CMOS process, wherein the metal layers are interconnected through a tungsten plug; the n-th metal layer is used as an upper electrode layer, the polycrystalline silicon layer is used as a main body layer for manufacturing a central connector, a connecting beam and an electrode, the n-th dielectric layer is used as a main body layer for manufacturing a cavity, the (n-2) -th metal layer is used as an electron layer, the (n-1) -th metal layer is used as a lower electrode layer, and the n-th and (n-1) -th metal layers are patterned after being prepared;
step 2: depositing a polysilicon layer and a passivation layer on the nth metal layer, and patterning to form a connecting beam and a central connecting body structure;
and step 3: forming a cavity in the nth dielectric layer by dry etching, and suspending the central connecting body and the connecting beam;
and 4, step 4: and (3) electrically welding, leading out electrode welding points, and adhering cilia to the central mass block through secondary integration to obtain the differential capacitance cilia hydrophone.
As a preferred technical solution, in step 1, the CMOS process includes a 0.18um process.
According to the preferable technical scheme, the metal layer is made of aluminum, the dielectric layer is silicon dioxide deposited through chemical vapor deposition, and the passivation layer is silicon nitride deposited through chemical vapor deposition.
As a preferred technical scheme, the silicon dioxide of the dielectric layer is phosphorus or boron doped silicon dioxide.
As a preferred technical solution, in step 3, hydrofluoric acid gas is used for dry etching.
Compared with the prior art, the invention has the following beneficial effects:
1) the differential capacitance type cilium hydrophone has the characteristics of good reliability, small volume, wide frequency band, high sensitivity, low manufacturing cost, easiness in batch production and the like;
2) the differential capacitance type ciliated hydrophone has more excellent performance, allows smaller packaging, further reduces the packaging and instrument cost, and has stronger ductility and applicability.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments of the present application will be briefly described below; it is appreciated that the following drawings depict only certain embodiments of the application and are therefore not to be considered limiting of its scope, for those skilled in the art will be able to derive additional related drawings therefrom without the benefit of the inventive faculty.
Figure 1 is a schematic top view (not packaged) of the overall structure of a differential capacitive ciliated hydrophone of the present invention.
Figure 2 is a schematic diagram of a wheatstone bridge formed by the differential capacitive ciliated hydrophone electrodes of the present invention.
Figure 3 is a schematic side view (unencapsulated) of the overall structure of a differential capacitive ciliated hydrophone of the present invention.
Figure 4 is a schematic cross-sectional view (not shown) of a differential capacitive ciliated hydrophone of the present invention, as fabricated.
In the figure: 1-basal layer, 2-polysilicon layer, 3-passivation layer, 4-cavity, 5-central connector, 6-connecting beam, 7-cilium body, 8-electrode welding spot and 9-tungsten plug;
l 1-first dielectric layer, ln-nth dielectric layer, m 1-first metal layer, m (n-1) -nth metal layer, mn-nth metal layer;
c1, C2, C3, C4, C5, C6, C7 and C8 are upper electrodes, and C1, C2, C3, C4, C5, C6, C7 and C8 are lower electrodes.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship illustrated in the integrated drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or quantity or location.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1 to 4, a differential capacitive cilia hydrophone includes a substrate layer 1, a first dielectric layer l1, a first metal layer m1, a second dielectric layer, a second metal layer, a. A cavity 4 is formed on the nth dielectric layer ln through etching, a nth metal layer mn is arranged at the top of the cavity 4, a (n-1) th metal layer m (n-1) is arranged at the bottom of the cavity, a central connector 5 positioned at the central part and four connecting beams 6 connected to the periphery of the central connector 5 are formed at the parts of the nth metal layer mn, the polysilicon layer 2 and the passivation layer 3 at the top of the cavity 4, a cilium body 7 is vertically fixed on the central connector 5, and upper electrodes c1, c2, c3, c4, c5, c6, c7 and c8 are distributed on the four connecting beams 6; the adjacent metal layers are interconnected through a tungsten plug 9, the nth metal layer mn serves as an electrode and is provided with an electrode welding point 8, the (n-1) th metal layer m (n-1) serves as a lower electrode layer, lower electrodes C1, C2, C3, C4, C5, C6, C7 and C8 are arranged on the lower electrode layer, the (n-2) th metal layer serves as an electronic layer, and a CMOS signal processing circuit is arranged on the electronic layer.
In the hydrophone structure, the substrate layer 1 is made of silicon, the dielectric layer is made of silicon oxide, the metal layer is made of aluminum, the passivation layer 3 is made of silicon nitride, the cilium body 7 is made of silicon, glass or resin, the cilium body 7 is cylindrical or cuboid, and the cavity 4 is cuboid; wherein, the substrate layer 1 adopts a silicon wafer which is a lightly doped P-type (100) silicon wafer with typical doping concentration N A ≈10 15 cm -3 。
The preparation method of the differential capacitance type cilium hydrophone uses a Back End (BEOL) layer of a COMS process as a structural layer of the MEMS device, a COMS electronic layer is integrated below the MEMS device layer, and all metal layers are interconnected through a tungsten plug 9, and the preparation method specifically comprises the following steps:
step 1: selecting a silicon wafer as an initial substrate layer 1, completing the manufacture of a CMOS active region, an n-layer dielectric layer and an n-layer metal layer on the substrate layer 1 by utilizing a CMOS process, wherein the metal layers are interconnected through a tungsten plug 9, an n-th metal mn layer is patterned after being prepared to form upper electrodes C1, C2, C3, C4, C5, C6, C7 and C8, and an n-1-th metal m (n-1) layer is patterned after being prepared to form lower electrodes C1, C2, C3, C4, C5, C6, C7 and C8; the n-th metal layer mn is used as a main body layer for manufacturing the central connector 5, the connecting beam 6 and the electrode, the n-th dielectric layer ln is used as a main body layer for manufacturing the cavity 4, the (n-2) -th metal layer is used as an electron layer, and the (n-1) -th metal layer m (n-1) is used as a lower electrode layer; the metal layer is made of aluminum, the dielectric layer is silicon dioxide formed by chemical vapor deposition, and the silicon dioxide is phosphorus or boron doped silicon dioxide;
in this step, the substrate layer 1 is almost suitable for any negative film with a flat surface, such as a silicon wafer, a glass sheet and the like, and in order to adapt to the CMOS process, a silicon wafer is selected as the substrate layer 1, and the silicon wafer adopts a lightly doped P-type (100) silicon wafer, which has a typical doping concentration N A ≈10 15 cm -3 (ii) a The CMOS process includes a 0.18um process and an advanced process with smaller feature line widths, utilizing four basic microfabrication techniques of the CMOS process: the preparation of the CMOS active region, the n dielectric layers, the n metal layers, the polycrystalline silicon layer 2 and the passivation layer 3 is completed layer by combining deposition, photoetching, doping and etching; when the dielectric layer is deposited, silicon oxide can be deposited by using Plasma Enhanced Chemical Vapor Deposition (PECVD); forming a metal layer on each dielectric layer by sputtering metal aluminum, spin coating a layer of photoresist on the metal layer, transferring a mask pattern onto the photoresist by utilizing a photoetching technology, defining each metal layer pattern by taking the photoresist pattern as a mask and then using a wet etching process to realize the functions of different metal layers; the metal layer is commonly used as an electrical interconnect, electrode material, resistor, etc., and in the present invention, the metal layer is used as an electrode, an electron layer, and a lower electrode layer.
Step 2: depositing a polysilicon layer 2 and a passivation layer 3 on the nth metal layer mn, and patterning the polysilicon layer 2 and the passivation layer 3 to form a connecting beam 6 and a central connecting body 5 structure; the passivation layer 3 is silicon nitride deposited by chemical vapor deposition.
Step 2: depositing a polycrystalline silicon layer 2 and a passivation layer 3 on the nth metal layer mn, etching the nth metal layer mn, the polycrystalline silicon layer 2 and the passivation layer 3, and patterning to form a connecting beam 6 and a central connecting body 5 structure;
and step 3: forming a cavity 4 in the nth dielectric layer ln through dry etching, and suspending a central connecting body 5 and a connecting beam 6; the dry etching adopts hydrofluoric acid gas for etching, silicon oxide in the nth dielectric layer ln is etched by using the hydrofluoric acid gas isotropic dry method, the hydrofluoric acid gas has high selectivity on the metal layer, and the metal layer is not corroded in the dry etching process.
And 5: performing electric welding, leading out an electrode welding point 8, and adhering the ciliary body 7 to the central connecting body 5 through secondary integration to obtain a differential capacitance type ciliary hydrophone; the electrodes are led out and the hydrophone is connected to the PCB by a wire bonding method.
Step 6: and (4) packaging the hydrophone by using the sound-transmitting cap, and injecting silicon oil.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (9)

1. A differential capacitive ciliated hydrophone, comprising: the high-temperature-resistant and high-temperature-resistant composite material comprises a base layer, wherein a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, an (n-1) th dielectric layer, an (n-1) th metal layer, an nth dielectric layer, an nth metal layer, a polycrystalline silicon layer and a passivation layer are sequentially arranged on the base layer from bottom to top, and n is more than or equal to 3; a cavity is formed on the nth dielectric layer in an etching mode, the top of the cavity is an nth metal layer, the bottom of the cavity is an (n-1) th metal layer, a central connecting body located in the central position and four connecting beams connected to the periphery of the central connecting body are formed on the nth metal layer, the polycrystalline silicon layer and the passivation layer at the top of the cavity, cilia bodies are vertically fixed on the central connecting body, and two upper electrodes connected with one another are distributed on each connecting beam; the adjacent metal layers are interconnected through tungsten plugs, the nth metal layer is used as an upper electrode layer and provided with electrode welding spots, the (n-1) th metal layer is used as a lower electrode layer, the lower electrode layer is provided with eight lower electrodes which are connected and correspond to the upper electrodes one by one, and the (n-2) th metal layer is used as an electron layer.
2. The differential capacitive ciliated hydrophone of claim 1, wherein: the base layer is made of silicon, the dielectric layer is made of silicon oxide, the metal layer is made of aluminum, the passivation layer is made of silicon nitride, the cilia body is made of silicon, glass or resin, the cilia body is cylindrical or cuboid, the cilia body is adhered to the central connecting body through secondary integration, and the cavity is cuboid.
3. The differential capacitive ciliated hydrophone of claim 2, wherein: the substrate layer is made of silicon wafer which is lightly doped P-type (100) silicon wafer with typical doping concentration N A ≈10 15 cm -3 。
4. A differential capacitive ciliated hydrophone according to any of claims 1-3, wherein: and a CMOS signal processing circuit is arranged on the electronic layer.
5. The method of making a differential capacitive ciliated hydrophone of claim 1, including the steps of:
step 1: selecting a silicon wafer as an initial substrate layer, and completing the manufacture of a CMOS active region, an n-layer dielectric layer and an n-layer metal layer on the substrate layer by utilizing a CMOS process, wherein the metal layers are interconnected through a tungsten plug; the device comprises a central connector, a connecting beam, a dielectric layer, an electrode layer, a lower electrode layer, an upper electrode layer, a lower electrode layer, a middle electrode layer, a dielectric layer and a dielectric layer, wherein the nth metal layer is used as a main body layer for manufacturing the central connector, the connecting beam and the electrode, the nth dielectric layer is used as a main body layer for manufacturing a cavity, the (n-2) th metal layer is used as an electronic layer, the (n-1) th metal layer is used as a lower electrode layer, and the nth (n-1) th metal layer is patterned after preparation;
step 2: depositing a polycrystalline silicon layer and a passivation layer on the nth metal layer, and patterning the polycrystalline silicon layer and the passivation layer to form a connecting beam and a central connecting body structure;
and step 3: forming a cavity in the nth dielectric layer by dry etching, and suspending the central connecting body and the connecting beam;
and 4, step 4: and (4) performing electric welding, and leading out electrode welding points to finally obtain the differential capacitance type cilium hydrophone.
6. The method of making a differential capacitive ciliated hydrophone of claim 5, wherein: in step 1, the CMOS process includes a 0.18um process.
7. The method of making a differential capacitive ciliated hydrophone of claim 5, wherein: the metal layer is made of aluminum, the dielectric layer is silicon dioxide through chemical vapor deposition, and the passivation layer is silicon nitride through chemical vapor deposition.
8. The method of making a differential capacitive ciliated hydrophone of claim 7, wherein: the silicon dioxide of the dielectric layer is phosphorus or boron doped silicon dioxide.
9. The method of making a differential capacitive ciliated hydrophone of claim 5, wherein: in step 3, the dry etching adopts hydrofluoric acid gas etching.
CN202210525262.4A 2022-05-15 2022-05-15 Differential capacitance type cilium hydrophone and manufacturing method thereof Pending CN114955979A (en)

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CN202210525262.4A CN114955979A (en) 2022-05-15 2022-05-15 Differential capacitance type cilium hydrophone and manufacturing method thereof

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Application Number Priority Date Filing Date Title
CN202210525262.4A CN114955979A (en) 2022-05-15 2022-05-15 Differential capacitance type cilium hydrophone and manufacturing method thereof

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