CN114890374A - L-shaped connecting beam acoustic emission device and preparation method thereof - Google Patents

L-shaped connecting beam acoustic emission device and preparation method thereof Download PDF

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Publication number
CN114890374A
CN114890374A CN202210525263.9A CN202210525263A CN114890374A CN 114890374 A CN114890374 A CN 114890374A CN 202210525263 A CN202210525263 A CN 202210525263A CN 114890374 A CN114890374 A CN 114890374A
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China
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layer
rectangular
acoustic emission
emission device
shaped connecting
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Inventor
王任鑫
张文栋
李照东
张赛
张国军
何常德
杨玉华
崔建功
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North University of China
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North University of China
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

The invention discloses an L-shaped connecting beam acoustic emission device and a preparation method thereof. The acoustic emission device comprises a substrate layer, alternately arranged dielectric layers, metal layers and passivation layers from bottom to top, wherein a rectangular cavity is etched on the nth dielectric layer, a rectangular vibrating diaphragm, an L-shaped connecting beam and an upper electrode are formed at the top of the cavity, and a lower electrode is formed at the bottom of the cavity. During preparation, a back end of the COMS (complementary metal oxide semiconductor) process (BEOL) layer is used as a structural layer of the MEMS device, a COMS electronic layer is integrated below the MEMS device layer, all metal layers are interconnected through tungsten plugs, and finally a rectangular cavity, a rectangular diaphragm and an L-shaped connecting beam are formed through etching. The L-shaped connecting beam acoustic emission device has the advantages of good reliability, small volume, high sensitivity, low manufacturing cost, easiness in batch production and the like.

Description

L-shaped connecting beam acoustic emission device and preparation method thereof
Technical Field
The invention relates to the technical field of CMOS-MEMS integrated sensor manufacturing, in particular to an L-shaped connecting beam acoustic emission device and a preparation method thereof.
Background
Acoustic emission is a transient high frequency stress wave (or acoustic wave) generated by the rapid release of energy by local redistribution of stress or strain generated during crack propagation, plastic deformation or phase change inside an object, and the frequency of the acoustic wave ranges from several hertz to tens of megahertz. The emitted sound wave can be used for material research, quality control, structural integrity judgment and safety monitoring. In recent years, acoustic emission inspection technology has attracted attention of some countries, and a great deal of research is carried out on the acoustic emission inspection technology successively, so that certain achievements are achieved. In the aspects of military product production and use, the advantage of acoustic emission is also being played to ensure the product quality. The acoustic emission device manufactured by integrating the CMOS-MEMS technology has the advantages of wide detection frequency band, high sensitivity, miniaturization, integration, good consistency, batch production and the like. Therefore, the sound emission device based on the CMOS-MEMS with a brand-new structure and a preparation method is urgently needed to be developed to meet the requirements of the existing industry.
Disclosure of Invention
The invention aims to provide an L-shaped connecting beam acoustic emission device based on the background technology, which can be applied to the technical field of nondestructive testing and the like.
The invention is realized by the following technical scheme:
an L-shaped connecting beam acoustic emission device comprises a base layer, wherein a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, an (n-1) th dielectric layer, an (n-1) th metal layer, an nth dielectric layer and an nth metal layer are sequentially arranged on the base layer from bottom to top, and n is more than or equal to 3; the adjacent metal layers are interconnected through tungsten plugs, a passivation layer is arranged on the nth metal layer, and an upper electrode welding spot and a lower electrode welding spot are arranged on the passivation layer; a rectangular cavity is etched on the nth dielectric layer; the passivation layer on the top of the rectangular cavity and the nth metal layer partially form a rectangular vibrating diaphragm and four L-shaped connecting beams, the rectangular vibrating diaphragm is positioned in the center and the size of the rectangular vibrating diaphragm is smaller than the transverse size of the rectangular cavity, and the four L-shaped connecting beams are distributed at two ends of the upper film edge and two ends of the lower film edge of the rectangular vibrating diaphragm; the n-th metal layer in the rectangular diaphragm and the L-shaped connecting beam is used as an upper electrode, the (n-1) -th metal layer at the bottom of the rectangular cavity is used as a lower electrode, and the upper electrode and the lower electrode are interconnected through a tungsten plug; the first to (n-2) th metal layers serve as electron shells.
As a preferred technical scheme, the substrate layer adopts a silicon wafer, the dielectric layer adopts silicon oxide, the metal layer adopts aluminum, and the passivation layer adopts silicon nitride.
As an optimized technical scheme, a plurality of rectangular through holes which are arranged in an array mode and communicated with the rectangular cavity are uniformly distributed on the rectangular vibrating diaphragm.
Preferably, the electronic layer is provided with a CMOS signal processing circuit.
Preferably, the silicon wafer is a lightly doped P-type (100) silicon wafer, and the typical doping concentration is N A ≈10 15 cm -3 。
Further, the invention also provides a preparation method of the L-shaped connecting beam acoustic emission device, which comprises the following steps:
1) selecting a silicon wafer as an initial substrate layer, and completing the manufacture of a CMOS active region, an n-layer dielectric layer, an n-layer metal layer and a passivation layer on the substrate layer by utilizing a CMOS process, wherein the metal layers are interconnected through a tungsten plug; the passivation layer and the n-th metal layer are formed with a plurality of rectangular through holes which are arranged in an array manner, the rectangular through holes are uniformly distributed in the rectangular boundary range of the rectangular cavity, and the bottom ends of the rectangular through holes extend to the n-th dielectric layer;
2) etching the passivation layer and the n-th metal layer and imaging to form a rectangular vibrating diaphragm and an L-shaped connecting beam part;
3) etching the nth dielectric layer by using a dry etching method to form a rectangular cavity so that the rectangular vibrating diaphragm and the L-shaped connecting beam are partially suspended;
4) and (4) electrically welding, and leading out electrode welding spots to finally obtain the acoustic emission device based on the CMOS-MEMS integration.
As a preferred technical scheme, the dry etching adopts hydrofluoric acid gas for etching.
Compared with the prior art, the invention has the following beneficial effects:
1) the acoustic emission device has the characteristics of good reliability, small volume, wide frequency band, high sensitivity, low manufacturing cost, easiness in batch production and the like;
2) the preparation method of the invention can greatly improve the performance of acoustic emission, allows smaller packaging and achieves lower packaging and instrument cost.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and it will be apparent to those skilled in the art that other relevant drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic top view (not packaged) of the overall structure of an acoustic emission device of the present invention.
Fig. 2 is a cross-sectional view a-a of fig. 1 (not encapsulated).
FIG. 3 is a schematic view of the cross-sectional microstructure of an acoustic emission device of the present invention (not packaged).
In the figure: 1-a substrate layer, 2-a tungsten plug, 3-a passivation layer, 4-an upper electrode welding spot, 5-a lower electrode welding spot, 6-a cavity, 7-a rectangular through hole, 8-a rectangular lower electrode, 9-a rectangular vibrating diaphragm, 10-an L-shaped cantilever beam, 11-a first edge support and 12-a second edge support;
l1-first dielectric layer, L (n-1) -n-1 th dielectric layer, Ln-nth dielectric layer, M1-first metal layer, M (n-1) -n-1 th metal layer and Mn-nth metal layer.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship illustrated in the integrated drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or quantity or location.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1 to 3, an L-shaped link beam acoustic emission device includes a substrate layer 1, the substrate layer 1 is a silicon wafer, the silicon wafer is a lightly doped P-type (100) silicon wafer, and a typical doping concentration N is A ≈10 15 cm -3 (ii) a A first medium layer L1, a first metal layer M1 and a second layer are sequentially arranged on the substrate layer 1 from bottom to topThe metal layer comprises a dielectric layer, a second metal layer, an (n-1) th dielectric layer L (n-1), an (n-1) th metal layer M (n-1), an nth dielectric layer Ln and an nth metal layer Mn, wherein n is more than or equal to 3, silicon oxide is adopted as the dielectric layer, and aluminum is adopted as the metal layer; adjacent metal layers are interconnected through a tungsten plug 2, a passivation layer 3 is arranged on the nth metal layer Mn, the passivation layer 3 is made of silicon nitride, and an upper electrode welding spot 4 and a lower electrode welding spot 5 are arranged on the passivation layer 3; a rectangular cavity 6 is etched on the nth dielectric layer Ln, air is filled in the rectangular cavity 6, and the nth dielectric layer Ln around the rectangular cavity 6 forms a first edge support 11; the passivation layer 3 and the nth metal layer Mn on the top of the rectangular cavity 6 are partially etched to form a rectangular vibrating diaphragm 9 and four L-shaped connecting beams 10, the rectangular vibrating diaphragm 9 is located in the center and the size of the rectangular vibrating diaphragm is smaller than the transverse size of the rectangular cavity 6, the four L-shaped connecting beams 10 are distributed at two ends of the upper film edge and two ends of the lower film edge of the rectangular vibrating diaphragm 9, and the passivation layer 3 and the nth metal layer Mn, except the rectangular vibrating diaphragm 9 and the four L-shaped connecting beams 10, form second edge supports 12 for supporting the four L-shaped connecting beams 10; a plurality of rectangular through holes 7 which are distributed in an array manner and communicated with the rectangular cavity 6 are uniformly distributed on the rectangular vibrating diaphragm 9, and air is filled in the rectangular through holes 7; the n-th metal layer Mn in the rectangular diaphragm 9 and the L-shaped connecting beam 10 is used as an upper electrode, the (n-1) -th metal layer M (n-1) at the bottom of the rectangular cavity 6 is used as a lower electrode, the lower electrode is a rectangular lower electrode 8, the size of the rectangular lower electrode 8 is the same as that of the rectangular diaphragm 9, and the rectangular diaphragm 9 and the rectangular lower electrode 8 are arranged in an up-and-down alignment manner; the upper electrode at the top of the rectangular cavity 6 is interconnected with the rectangular lower electrode 8 at the bottom through the tungsten plug 2; the first-layer metal layer M1 to the (n-2) th-layer metal layer are used as electron layers, and a CMOS signal processing circuit is arranged on the electron layers.
The preparation method of the L-shaped connecting beam acoustic emission device uses a Back End (BEOL) layer of a COMS process as a structural layer of the MEMS device, a COMS electronic layer is integrated below the MEMS device layer, and all metal layers are interconnected through a tungsten plug 2, and the preparation method specifically comprises the following steps:
1) selecting a silicon wafer as an initial substrate layer 1, and completing the manufacture of a CMOS active region, an n-layer dielectric layer, an n-layer metal layer and a passivation layer 3 on the substrate layer 1 by utilizing a CMOS process, wherein the metal layers are interconnected through a tungsten (W) plug; the n-th metal layer Mn is used as an upper electrode, the n-1-th metal layer M (n-1) is used as a lower electrode, the n-th dielectric layer Ln is used as a sacrificial layer for etching the rectangular cavity 6, the passivation layer 3 and the n-th metal layer Mn are used as main bodies of the rectangular vibrating diaphragm 9 and the L-shaped connecting beam 10, a plurality of rectangular through holes 7 which are arranged in an array mode are formed in the passivation layer 3 and the n-th metal layer Mn, the rectangular through holes 7 are evenly distributed in the rectangular boundary range of the rectangular cavity 6, and the bottom ends of the rectangular through holes 7 extend to the n-th dielectric layer Ln.
In this step, the substrate layer 1 is almost suitable for any negative film with a flat surface, such as a silicon wafer, a glass sheet and the like, and in order to adapt to the CMOS process, a silicon wafer is selected as the substrate layer 1, and the silicon wafer adopts a lightly doped P-type (100) silicon wafer, which has a typical doping concentration N A ≈10 15 cm -3 ；
The CMOS process includes a 0.18um process and an advanced process with smaller feature line widths, utilizing four basic microfabrication techniques of the CMOS process: the deposition, the photoetching, the doping and the etching are combined to finish the manufacture of the CMOS active region, the n dielectric layers, the n metal layers and the passivation layer 3 layer by layer; when the dielectric layer is deposited, silicon oxide can be deposited by using Plasma Enhanced Chemical Vapor Deposition (PECVD); forming a metal layer on each dielectric layer by sputtering metal aluminum, spin coating a layer of photoresist on the metal layer, transferring a mask pattern onto the photoresist by utilizing a photoetching technology, defining each metal layer pattern by taking the photoresist pattern as a mask and then using a wet etching process to realize the functions of different metal layers; the metal layer is usually used for electrical interconnection, electrode material, resistance, etc., and in the present invention, the metal layer is used for upper and lower electrodes and an electron layer.
2) Etching the passivation layer 3 and the n-th metal layer Mn, and patterning to form a rectangular vibrating diaphragm 9 and an L-shaped connecting beam 10 part;
3) etching on the nth dielectric layer Ln by using a dry etching method to form a rectangular cavity 6, so that the rectangular vibrating diaphragm 9 and four L-shaped connecting beams 10 are partially suspended; the dry etching adopts hydrofluoric acid gas for etching, silicon oxide in the sacrificial layer is etched by using the hydrofluoric acid gas in an isotropic dry method, the metal layer is selected by the hydrofluoric acid gas in a high ratio, and the metal layer is not corroded in the dry etching process.
4) Air packaging is carried out on the whole structure, and a rectangular cavity 6 on the structure forms an air-tight cavity; wherein, the air encapsulation forms an air-tight cavity by depositing parylene; in order to ensure the tightness of the working environment of the device, the device needs to be hermetically packaged in air, the through hole can be sealed by Chemical Vapor Deposition (CVD) oxide or nitride, and particularly the device can be hermetically processed by plating parylene.
The acoustic emission device prepared by the invention has the characteristics of good reliability, small volume, wide frequency band, high sensitivity, low manufacturing cost, easiness in batch production and the like, has advantages in preparing small-size and large-scale array ultrasonic probes, and can be applied to various fields of medicine, military, industry, agriculture and the like.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (7)

1. An L-shaped connecting beam acoustic emission device is characterized in that: the high-temperature-resistant and high-temperature-resistant composite material comprises a base layer, wherein a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, an (n-1) th dielectric layer, an (n-1) th metal layer, an nth dielectric layer and an nth metal layer are sequentially arranged on the base layer from bottom to top, and n is more than or equal to 3; the adjacent metal layers are interconnected through tungsten plugs, a passivation layer is arranged on the nth metal layer, and an upper electrode welding spot and a lower electrode welding spot are arranged on the passivation layer; a rectangular cavity is etched on the nth dielectric layer; the passivation layer on the top of the rectangular cavity and the nth metal layer are partially etched to form a rectangular vibrating diaphragm and four L-shaped connecting beams, the rectangular vibrating diaphragm is located in the center and the size of the rectangular vibrating diaphragm is smaller than the transverse size of the rectangular cavity, and the four L-shaped connecting beams are distributed at two ends of the upper film edge and two ends of the lower film edge of the rectangular vibrating diaphragm; the n-th metal layer in the rectangular diaphragm and the L-shaped connecting beam is used as an upper electrode, the (n-1) -th metal layer at the bottom of the rectangular cavity is used as a lower electrode, and the upper electrode and the lower electrode are interconnected through a tungsten plug; the first to (n-2) th metal layers serve as electron shells.
2. An L-shaped link beam acoustic emission device according to claim 1, characterized in that: the substrate layer adopts a silicon wafer, the dielectric layer adopts silicon oxide, the metal layer adopts aluminum, and the passivation layer adopts silicon nitride.
3. An L-shaped link beam acoustic emission device according to claim 2, characterized in that: a plurality of rectangular through holes which are arranged in an array mode and communicated with the rectangular cavity are uniformly distributed on the rectangular vibrating diaphragm.
4. An L-shaped link beam acoustic emission device according to any one of claims 1 to 3, characterized in that: and a CMOS signal processing circuit is arranged on the electronic layer.
5. An L-shaped link beam acoustic emission device according to claim 2, characterized in that: the silicon wafer is a lightly doped P-type (100) silicon wafer with a typical doping concentration of N A ≈10 15 cm -3 。
6. A method for manufacturing an L-shaped tie-beam acoustic emission device according to claim 4, comprising the steps of:
1) selecting a silicon wafer as an initial substrate layer, and completing the manufacture of a CMOS active region, an n-layer dielectric layer, an n-layer metal layer and a passivation layer on the substrate layer by utilizing a CMOS process, wherein the metal layers are interconnected through a tungsten plug; the passivation layer and the n-th metal layer are formed with a plurality of rectangular through holes which are arranged in an array manner, the rectangular through holes are uniformly distributed in the rectangular boundary range of the rectangular cavity, and the bottom ends of the rectangular through holes extend to the n-th dielectric layer;
2) etching the passivation layer and the nth metal layer and imaging to form a rectangular vibrating diaphragm and an L-shaped connecting beam part;
3) etching the nth dielectric layer by using a dry etching method to form a rectangular cavity so that the rectangular vibrating diaphragm and the L-shaped connecting beam are partially suspended;
4) and (4) electrically welding, and leading out electrode welding spots to finally obtain the acoustic emission device based on the CMOS-MEMS integration.
7. The method for preparing an acoustic emission device with L-shaped connecting beams as claimed in claim 6, wherein the acoustic emission device comprises the following steps: the dry etching is carried out by adopting hydrofluoric acid gas.
CN202210525263.9A 2022-05-15 2022-05-15 L-shaped connecting beam acoustic emission device and preparation method thereof Pending CN114890374A (en)

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CN202210525263.9A CN114890374A (en) 2022-05-15 2022-05-15 L-shaped connecting beam acoustic emission device and preparation method thereof

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CN202210525263.9A CN114890374A (en) 2022-05-15 2022-05-15 L-shaped connecting beam acoustic emission device and preparation method thereof

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