CN114942664B - CMOS voltage reference source with wide picowatt level and temperature range - Google Patents

CMOS voltage reference source with wide picowatt level and temperature range Download PDF

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CN114942664B
CN114942664B CN202210622192.4A CN202210622192A CN114942664B CN 114942664 B CN114942664 B CN 114942664B CN 202210622192 A CN202210622192 A CN 202210622192A CN 114942664 B CN114942664 B CN 114942664B
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circuit
voltage
power supply
supply voltage
electrode
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CN114942664A (en
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曾衍瀚
李旭
杨敬慈
黄文健
陈美玲
鲍宇琛
程杰
张妤婷
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Guangzhou University
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Guangzhou University
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention discloses a CMOS voltage reference source with a wide temperature range of picowatt level, which consists of a power supply voltage generating circuit and a reference generating circuit, wherein the power supply voltage generating circuit is used for generating a power supply voltage which is related with the weak power supply voltage so as to solve the problem of voltage linearity deterioration caused by the deficiency of operational amplification of the circuit, and the reference generating circuit is used for generating a reference voltage which is irrelevant with temperature so as to realize temperature compensation.

Description

CMOS voltage reference source with wide picowatt level and temperature range
Technical Field
The invention relates to the technical field of integrated circuit design, in particular to a CMOS voltage reference source with a picowatt level and a wide temperature range.
Background
The voltage reference source is used as a classical analog voltage stabilizing circuit, and is widely applied to analog-digital, digital-analog converter and linear voltage stabilizer circuits, and the voltage reference source mainly outputs a reference voltage which is irrelevant to temperature, process and power supply voltage. The temperature characteristic and noise immunity of the voltage reference source play a significant role in the precision of the circuit and the performance of the whole circuit system. The excellent voltage reference source performance is certainly the performance protection of the whole circuit system, and is better and better.
With the explosive development of the fifth generation wireless network, the internet of things has evolved greatly. The development of the internet of things has also prompted a great deal of application of sensors, among which a voltage reference source is an indispensable module. And whether the sensor node is in a dormant state or not, the voltage reference source is required to be in a normal working state so that the sensor can realize quick response and realize the function of the sensor. Therefore, in order to further reduce the power consumption of the circuit, in the application of the internet of things, the picowatt level reference source gradually starts to replace the nanowatt level reference source.
In previous researches, the power consumption of a traditional band gap reference source is usually in milliwatt level, and the band gap reference source cannot be applied to the application scene of the internet of things with the ultra-low power consumption requirement. Although nanowatt bandgap references have been proposed in some studies, the research on picowatt bandgap reference sources is still quite poor. A picowatt CMOS reference source can also obtain a voltage reference using principles similar to a low threshold bandgap reference source, but in high temperature resistive Radio Frequency Identification (RFID) sensor nodes, such as those used for logistics tracking, industrial automation and real-time monitoring of underground pipelines, a wide temperature range of voltage reference sources is required. The temperature range of such a typical picowatt CMOS reference source is not satisfactory. In this regard, the research of the ultra-low power consumption CMOS reference source with wider circuit working temperature range and suitable for various complex conditions has very far-reaching significance
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the invention provides a CMOS voltage reference source with a picowatt level and a wide temperature range, which solves the problems in the prior art.
(II) technical scheme
In order to achieve the above purpose, the present invention provides the following technical solutions:
a picowatt wide temperature range CMOS voltage reference source characterized by: the power supply circuit is used for generating a power supply voltage which is weakly related to a power supply voltage and is used as the power supply voltage of the reference voltage generation circuit to improve the voltage linearity of the whole circuit; the reference generating circuit is used for generating a reference voltage irrelevant to temperature to realize temperature compensation, and the circuit reduces the quiescent current of the circuit by utilizing the leakage current of MOS, so that the power consumption of the circuit is reduced to the picowatt level; the reference voltage generating circuit realizes temperature compensation by utilizing two NMOS tubes, counteracts related temperature errors caused by a process, obtains a reference voltage irrelevant to temperature, and widens the working temperature range of the circuit.
Preferably, the gate of the M1 tube of the supply voltage generating circuit is grounded, the drain is connected to the supply voltage, the source is connected to the gate and the drain of the M2 tube, the gate and the drain of the M2 tube are connected together, and the source is grounded.
Preferably, the gate of M3 is connected to the gate and the drain of M2, the drain is connected to the power supply voltage, and the source is connected to the drain of M4, and a power supply voltage weak with respect to the power supply voltage is obtained at the drain of M4, and the power supply voltage is used as a reference voltage to generate the power supply voltage of the circuit, so that the voltage linearity of the circuit is greatly improved.
Preferably, the drain electrode of M4 is connected to the source electrode of M3, the gate electrode is connected to ground, and the source electrode is connected to the gate electrode and the drain electrode of M5.
Preferably, the gate and the drain of the simultaneous M5 are connected together, and the source is grounded.
Preferably, the circuit realizes temperature compensation by utilizing the temperature characteristic of the threshold voltage difference of the NMOS tube and the temperature characteristic of the thermoelectric voltage, and a reference voltage is obtained.
Preferably, only 5 NMOS tubes are used, and no PMOS tube is used, so that temperature errors caused by process problems are offset to the greatest extent, and the temperature range of the circuit reaches-40-150 ℃.
Preferably, the leakage current of the MOS tube is utilized by the circuit, the static current of the circuit is greatly reduced, the power consumption of the circuit is reduced to the picowatt level, and the circuit is suitable for an application scene with ultra-low power consumption under a complex condition.
Compared with the prior art, the CMOS voltage reference source with the wide temperature range and the picowatt level has the following beneficial effects:
1. the invention mainly comprises two parts of circuits, namely a power supply voltage generating circuit and a reference generating circuit, wherein the main function of the power supply voltage generating circuit is to generate a power supply voltage which is related with weak power supply voltage, so that the problem of voltage linearity deterioration of the circuit caused by the loss of operational amplifier is solved, and the main function of the reference generating circuit is to generate a reference voltage which is independent of temperature, thereby realizing temperature compensation.
2. The circuit can greatly reduce the static current of the circuit by utilizing the leakage current of the MOS, so that the power consumption of the circuit can reach the picowatt level, meanwhile, the circuit only utilizes 5 MOS tubes, the complexity of the circuit is greatly reduced, the minimum power supply voltage of the circuit is reduced to 0.3V, the circuit can be suitable for the scene of ultra-low power consumption, and meanwhile, the working temperature range of the circuit reaches-40 ℃ to 150 ℃, so that the circuit can be suitable for various complex environments while meeting the ultra-low power consumption performance.
Drawings
FIG. 1 is a schematic diagram of an overall circuit of a CMOS voltage reference source according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a power supply voltage generating circuit according to an embodiment of the invention;
fig. 3 is a schematic diagram of a reference voltage generating circuit according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
Examples of the embodiments are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements throughout or elements having like or similar functionality. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
Examples
Referring to fig. 1-3, a CMOS voltage reference source with a wide temperature range at a picowatt level according to an embodiment of the present invention includes a supply voltage generating circuit and a reference voltage generating circuit, where the supply voltage generating circuit is configured to generate a supply voltage related to a weak supply voltage, and the supply voltage is used as a supply voltage of the reference voltage generating circuit to improve voltage linearity of the overall circuit; the reference generating circuit is used for generating a reference voltage irrelevant to temperature to realize temperature compensation, and the circuit reduces the quiescent current of the circuit by utilizing the leakage current of MOS, so that the power consumption of the circuit is reduced to the picowatt level; the reference voltage generating circuit realizes temperature compensation by utilizing two NMOS tubes, counteracts related temperature errors caused by a process, obtains a reference voltage irrelevant to temperature, and widens the working temperature range of the circuit.
Specifically, the CMOS voltage reference source with the wide temperature range of the Pivalance level comprises a power supply voltage generating circuit and a reference voltage generating circuit, and mainly comprises a power supply voltage generating circuit and a reference generating circuit, wherein the power supply voltage generating circuit mainly has the function of generating a power supply voltage weakly related to the power supply voltage, so that the problem of voltage linearity deterioration caused by the deficiency of an operational amplifier of the circuit is solved, the reference generating circuit mainly has the function of generating a reference voltage irrelevant to the temperature, temperature compensation is realized, the circuit greatly reduces the static current of the circuit by utilizing the leakage current of MOS, the power consumption of the circuit can reach the Pivalance level, meanwhile, the circuit only utilizes 5 MOS tubes, the complexity of the circuit is greatly reduced, the minimum power supply voltage of the circuit is reduced to 0.3V, the circuit can be suitable for a scene with ultra-low power consumption, the working temperature range of the circuit reaches-40 ℃ to 150 ℃, the condition that the circuit can meet various complex environments at the same time of meeting the ultra-low power consumption performance, the main function of the power supply voltage is generating a reference voltage irrelevant to the temperature, the reference voltage is greatly reduced by utilizing the temperature of the reference voltage, and the related temperature of the power supply voltage is greatly reduced, and the temperature of the reference voltage is greatly offset by utilizing the reference voltage generated by the NMOS circuit, so that the temperature of the reference voltage is greatly offset by the temperature-related to the power supply voltage has the temperature offset effect of the circuit.
The grid electrode of the M1 tube of the power supply voltage generating circuit is grounded, the drain electrode is connected with the power supply voltage, the source electrode is connected with the grid electrode and the drain electrode of the M2, the grid electrode of the M2 is connected with the drain electrode, the source electrode is grounded, the grid electrode of the M3 is connected with the grid electrode and the drain electrode of the M2, the drain electrode is connected with the power supply voltage of the M4 tube, the voltage is used as the power supply voltage of the reference voltage generating circuit, the voltage linearity of the circuit is greatly improved, the drain electrode of the M4 tube is connected with the source electrode of the M3 tube, the grid electrode is connected to the ground, the source electrode is connected with the grid electrode of the M5 tube and the drain electrode, the grid electrode of the M5 tube is connected with the drain electrode, the source electrode is grounded, the circuit utilizes the temperature characteristic of the threshold voltage difference of the NMOS tube and the temperature characteristic of the thermoelectric potential, so that a reference voltage is obtained, only 5 NMOS tubes are used, the temperature error caused by weak relation to the power supply voltage is offset to the drain electrode of the M4 tube, the temperature error is reached to-40 ℃, the voltage linearity of the circuit is greatly improved, the drain current is greatly reduced, the power consumption of the circuit is greatly reduced by the drain voltage of the MOS circuit is greatly reduced, and the circuit is applicable to the condition of the drain voltage is greatly low-level circuit.
The working principle of the invention is as follows: as shown in fig. 2, the supply voltage generating circuit mainly comprises NMOS transistors M1, M2 and M3, and has a main function of generating a supply voltage related to weak supply voltage, so as to solve the problem of voltage linearity degradation caused by the loss of the op amp. All MOS tubes of the circuit are biased and subthreshold, so the circuit comprises:
the general formula (1) and (2) can be obtained:
as can be seen from formula (3), V at this time A Having been a reference voltage, nearly independent of the supply voltage, and for MOS transistor M3 there is:
the combination of the formulas (3) and (4) can be obtained, and VDDX generated by the supply voltage generating circuit is:
as shown in FIG. 3, the reference voltage generating circuit mainly comprises NMOS transistors M4, M5, and the circuit principle is related to the power supply voltage generating circuit, so that the reference voltage of the circuit is not described here in detail
Wherein, can know the temperature characteristic of MOS pipe threshold voltage and be:
V TH4 ＝V TH0 -α T4 (T-T 0 )#(7)
V TH5 ＝V TH0 -α T5 (T-T 0 )#(8)
therefore, it is easy to know that:
as can be readily seen, the (V) TH4 -V TH5 ) As a function proportional to temperature, consider V T Is also proportional to temperature, for which purpose W is 4 L 5 /W 5 L 4 The value of (2) is smaller than 1, so that the temperature compensation of the circuit can be realized. Meanwhile, the circuit has a simple structure and utilizes the leakage voltage of the MOS tube, so that the minimum working voltage of the circuit can be reduced to 0.3V, and the performance requirements under some ultra-low power consumption scenes are greatly met.
The CMOS voltage reference source with the wide temperature range of the Pivalance level provided by the embodiment of the invention consists of a power supply voltage generating circuit and a reference generating circuit, wherein the power supply voltage generating circuit generates a power supply voltage which is related with the weak power supply voltage so as to solve the problem of voltage linearity deterioration caused by the operational amplifier deficiency of the circuit, and the reference generating circuit generates a reference voltage which is irrelevant to the temperature so as to realize temperature compensation.
In summary, the circuit provided by the embodiment of the invention reduces the power consumption of the circuit to the picowatt level by utilizing the leakage current of the MOS tube, and utilizes the circuit structure of the all-NMOS, so that the related temperature error caused by the process is offset to a great extent, the working temperature range of the circuit is widened, meanwhile, the power supply voltage generating circuit is provided, the problem of deterioration of voltage linearity caused by the operational amplifier deficiency is solved, and compared with the prior reference circuit, the circuit is more suitable for various complicated conditions and meets the scene of ultra-low power consumption requirement due to the series of characteristics.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (4)

1. A picowatt wide temperature range CMOS voltage reference source characterized by:
the power supply circuit comprises a power supply voltage generating circuit and a reference voltage generating circuit;
the power supply voltage circuit consists of NMOS tubes M1, M2 and M3, wherein the grid electrode of the M1 is grounded, the drain electrode of the M1 is connected with the power supply voltage, the source electrode of the M2 is connected with the grid electrode and the drain electrode of the M2, the grid electrode and the drain electrode of the M2 are connected together, and the source electrode of the M2 is grounded; meanwhile, the grid electrode of M3 is connected with the grid electrode and the drain electrode of M2, the drain electrode of M3 is connected with the power supply voltage, and the source electrode of M3 is connected with the drain electrode of M4; the reference voltage generating circuit consists of NMOS tubes M4 and M5, wherein the drain electrode of the M4 is connected with the source electrode of the M3, the grid electrode of the M4 is connected to the ground, and the source electrode of the M4 is connected to the grid electrode and the drain electrode of the M5; meanwhile, the grid electrode and the drain electrode of the M5 are connected together, and the source electrode of the M5 is grounded;
the power supply voltage circuit is used for generating a power supply voltage which is weakly related to the power supply voltage, and the power supply voltage is used as the power supply voltage of the reference voltage generation circuit and is used for improving the voltage linearity of the whole circuit; the reference voltage generating circuit obtains a supply voltage which is weakly related to a power supply voltage at the drain electrode of the M4, the reference voltage generating circuit is used for generating a reference voltage which is irrelevant to temperature, temperature compensation is realized, and the whole circuit of the CMOS voltage reference source reduces the quiescent current of the circuit by utilizing the leakage current of MOS, so that the power consumption of the circuit is reduced to the picowatt level; the reference voltage generating circuit realizes temperature compensation by utilizing two NMOS tubes, counteracts related temperature errors caused by a process, obtains a reference voltage irrelevant to temperature, and widens the working temperature range of the circuit.
2. The picowatt wide temperature range CMOS voltage reference source of claim 1, wherein: the whole circuit of the CMOS voltage reference source realizes temperature compensation by utilizing the temperature characteristic of the threshold voltage difference of the NMOS tube and the temperature characteristic of the thermoelectric voltage, thereby obtaining a reference voltage.
3. The picowatt wide temperature range CMOS voltage reference source of claim 1, wherein: the whole circuit of the CMOS voltage reference source only uses 5 NMOS tubes and does not use PMOS tubes, so that temperature errors caused by process problems are offset to the greatest extent, and the temperature range of the circuit reaches-40-150 ℃.
4. The picowatt wide temperature range CMOS voltage reference source of claim 1, wherein: the whole circuit of the CMOS voltage reference source utilizes the leakage current of the MOS tube, the static current of the circuit is greatly reduced, and the power consumption of the circuit is reduced to the picowatt level, so that the whole circuit of the CMOS voltage reference source is suitable for the application scene of ultra-low power consumption under the complex condition.
CN202210622192.4A 2022-06-02 2022-06-02 CMOS voltage reference source with wide picowatt level and temperature range Active CN114942664B (en)

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EP2706426A2 (en) * 2012-09-07 2014-03-12 Nxp B.V. Low-power resistor-less voltage reference circuit
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