CN114935793A - Method for carrying out ultraviolet photoetching on optical waveguide material and optical waveguide preparation method - Google Patents
Method for carrying out ultraviolet photoetching on optical waveguide material and optical waveguide preparation method Download PDFInfo
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- CN114935793A CN114935793A CN202210610260.5A CN202210610260A CN114935793A CN 114935793 A CN114935793 A CN 114935793A CN 202210610260 A CN202210610260 A CN 202210610260A CN 114935793 A CN114935793 A CN 114935793A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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Abstract
A method for carrying out ultraviolet lithography on an optical waveguide material and an optical waveguide preparation method are disclosed, wherein pre-exposure is carried out before the ultraviolet lithography is carried out on the optical waveguide material to form a semi-solidified thin layer, and the optical waveguide preparation method based on the method comprises the following steps: s1: preparing a lower cladding layer on a substrate; s2: preparing a core layer on the lower cladding layer; s3: pre-exposing the core layer; s4: carrying out ultraviolet photoetching on the pre-exposed core layer; s5: developing the core layer after the photoetching is finished to obtain a core layer with a convex structure; s6: an upper cladding layer is prepared on the core layer. The invention solves the problem of oxygen inhibition in the direct ultraviolet lithography process, does not need to provide nitrogen or other inert gas atmosphere in the ultraviolet lithography process, and has simple operation and high preparation efficiency.
Description
Technical Field
The invention belongs to the fields of optical communication technology and microelectronics, and particularly relates to a preparation method of an optical waveguide.
Background
With the rapid development of optical fiber communication networks, data centers and supercomputers, the demand for transmission bandwidth improvement of optical interconnection technology as a core component is higher and higher, and the optical interconnection gradually replaces electrical interconnection to realize high-density and high-speed data transmission, which has become a future development trend. High speed electrical interconnects have inherent deficiencies of signal delay, attenuation and crosstalk, and increased electrical loss compared to optical interconnects, which have received much attention in interconnect communication due to many advantages (parallel optical data links), absence of electromagnetic interference, low power consumption, and low signal loss. The polymer material is widely applied to the preparation of optical waveguides due to the advantages of low cost, good flexibility, good compatibility with various substrates and the like. The acrylic-based photosensitive fluorinated polymers have good optical properties, especially with relatively low absorption loss of the material in the 1310nm and 1550nm communications bands. Common fabrication methods for this material are soft lithography and reactive ion etching. For soft lithography, the preparation process includes preparing a master, preparing a PDMS mold, and preparing a waveguide, and the method usually uses a sharp tool to manually peel off the PDMS mold, which is complicated in operation and easy to damage the structure. For reactive ion etching, the equipment is expensive, and the roughness of the side wall is relatively large in the etching process. The ultraviolet photoetching process is relatively simple compared with the preparation process, but the material cannot complete polymerization reaction in the air atmosphere due to the influence of oxygen inhibition, so that the material cannot be prepared into the optical waveguide by ultraviolet photoetching in the conventional air environment.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention provides an improved ultraviolet lithography process, which aims to solve the problem of oxygen inhibition, realize the preparation of an optical waveguide based on ultraviolet lithography in an air atmosphere and simplify the preparation process of the optical waveguide. .
In order to realize the purpose, the invention adopts the following technical scheme:
a method for ultraviolet photoetching of optical waveguide material includes such steps as pre-exposing the optical waveguide glue, controlling the intensity and time of pre-exposure to form semi-solidified thin layer on the surface of optical waveguide glue, and ultraviolet photoetching and developing.
The pre-exposure treatment is ultraviolet exposure of large area and low energy to the optical waveguide glue in nitrogen environment.
A method for preparing an optical waveguide based on ultraviolet lithography,
s1: preparing a lower cladding layer on a substrate;
s2: preparing a core layer on the lower cladding layer;
s3: pre-exposing the core layer;
s4: carrying out ultraviolet photoetching on the pre-exposed core layer;
s5: developing the core layer after the photoetching is finished to obtain a core layer with a convex structure;
s6: an upper cladding layer is prepared on the core layer.
In S3: the pre-exposure treatment process is to carry out large-area and low-energy ultraviolet exposure in a nitrogen or other inert gas environment, and the surface of the core layer is in an incompletely cured state after the pre-exposure treatment.
In S4: and covering a mask on the core layer to perform ultraviolet photoetching.
The upper cladding, the core layer or the lower cladding are subjected to large-area ultraviolet exposure in the environment of nitrogen or other inert gases after being formed
The preparation of the upper cladding, the core layer or the lower cladding is realized by processes such as spin coating, dip coating, or a doctor blade method.
And S7, and performing heat curing on the whole.
In S1: and cleaning, baking and plasma treating the substrate, and then preparing the lower cladding.
The principle of the application is as follows: the core layer is subjected to large-area and low-energy ultraviolet exposure, so that the polymerization reaction rate is slowed, a thin layer with high viscosity is formed on the surface of the core layer, the thin layer can block the influence of oxygen on the polymerization reaction in the photoetching process, and the photoetching process can be carried out in the air.
Due to the adoption of the technical scheme, the invention has the following beneficial results:
according to the invention, the large-area pre-exposure treatment is carried out on the optical waveguide adhesive, so that the ultraviolet lithography process can be carried out in an air environment, nitrogen or other inert gas atmosphere is not required to be provided in the ultraviolet lithography process, the preparation process is simplified, and the preparation efficiency is improved.
Drawings
FIG. 1 is a schematic flow chart of a method for manufacturing an optical waveguide according to the present invention.
FIG. 2 is a schematic illustration of the preparation of the lower cladding and core layers on a substrate.
Fig. 3 is a schematic illustration of large area pre-exposure of a core layer.
Fig. 4 is a schematic illustration of masked uv lithography for a core layer.
Fig. 5 is a schematic view of developing the core layer.
FIG. 6 is a schematic illustration of the preparation of an upper cladding layer on the surface of a core layer.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example 1: a method for ultraviolet photoetching of optical waveguide material includes such steps as pre-exposing the optical waveguide glue, controlling the intensity and time of pre-exposure to form semi-solidified thin layer on the surface of optical waveguide glue, and ultraviolet photoetching and developing.
The pre-exposure treatment is to carry out large-area and low-energy ultraviolet exposure on the optical waveguide glue in a nitrogen environment, proper ultraviolet curing energy and pre-exposure time can be selected according to the thickness of the optical waveguide glue, and the whole pre-exposure process needs to be carried out in the nitrogen or other inert gas atmosphere.
Example 2:
a method for preparing optical waveguide based on ultraviolet lithography comprises the following steps:
step 1: preparing a lower cladding layer on the substrate and exposing;
step 2: preparing a core layer on the surface of the lower cladding layer;
and step 3: pre-exposing the core layer;
and 4, step 4: carrying out ultraviolet photoetching on the pre-exposed core layer;
and 5: developing the core layer after photoetching;
and 6: an upper cladding layer is prepared on the surface of the core layer and exposed to light.
In the step 1, the substrate can be made of a substrate of a printed circuit board, a glass substrate, a silicon substrate and the like, a lower cladding is prepared on the substrate, and then the lower cladding is subjected to large-area ultraviolet exposure in a nitrogen or other inert gas environment and is cured by ultraviolet; the polymer lower cladding can be prepared by processes such as spin coating, dip coating, doctor blade method and the like.
And 2, preparing a core layer on the surface of the lower cladding layer, wherein the preparation of the core layer can be realized by processes such as spin coating, dip coating, a doctor blade method and the like.
And 3, performing pre-exposure treatment on the core layer by performing large-area low-energy ultraviolet exposure on the core layer in a nitrogen environment, wherein proper ultraviolet curing energy and pre-exposure time are selected according to the thickness of the core layer, and the whole pre-exposure process needs to be performed in the atmosphere of nitrogen or other inert gases.
In the step 4, the photolithography process is performed in a conventional air atmosphere, a mask-equipped photolithography machine or a maskless photolithography machine and other photolithography equipment can be used, and the width of the optical waveguide core is mainly determined by the line width designed by the mask plate.
Example 3:
as in fig. 1, steps S101 and S102, a lower cladding layer and a core layer are prepared on a substrate.
In this example, the lower clad layer was prepared on a substrate FR-4 board of a clean printed circuit board, as shown in FIG. 2. The FR-4 substrate 1 is cleaned by sequentially cleaning in hot acetone and hot alcohol, wiping with cotton balls to prevent damage to the substrate surface, ultrasonically cleaning in deionized water, blow-drying with nitrogen, and baking at 120 deg.C for 10min on a heating platform. Before the lower cladding layer 2 is prepared, the substrate is subjected to plasma treatment. And then preparing a lower cladding layer 2 on the FR-4 board 1 after plasma treatment, carrying out large-area ultraviolet exposure on the lower cladding layer 2 in a nitrogen environment, and curing the lower cladding layer 2. The core layer 3 is then prepared on the lower cladding layer.
In this embodiment, the lower cladding layer and the core layer may be prepared by spin coating, and the thicknesses of the lower cladding layer and the core layer may be controlled by the spin coating speed.
In this embodiment, the materials of the lower cladding layer and the core layer are both selected from acrylate negative optical waveguide glue.
Step S103, pre-exposing the core layer.
In this embodiment, the pre-exposure process is a large-area, low-energy ultraviolet exposure of the core layer in a nitrogen atmosphere, as shown in fig. 3. A uv curing oven 5, which is permeable to nitrogen, is the preferred apparatus, and the pre-exposure time is timed using a timer by inputting the appropriate uv curing energy through the thickness of the core layer in the fabrication equipment. And preparing the ultraviolet semi-solidified thin layer 4.
In this embodiment, the pre-exposure is preceded by ensuring that the exposure environment is sufficiently purged of nitrogen.
And step S104, carrying out ultraviolet photoetching on the pre-exposed core layer.
In this embodiment, the photolithography process can be performed in air, and a schematic diagram of core layer photolithography is shown in fig. 4, with a mask photolithography machine being a preferred apparatus. And determining whether the mask plate is a male plate or a female plate according to the characteristics of the selected glue. For example, the photoresist is prepared as a negative resist, the mask is determined as a negative, i.e., mostly opaque, transparent at the lines of the optical waveguide circuit, the exposed portions 6 of the core are UV cured, and the unexposed portions have the pre-exposed layer 4 and the unexposed layer 3.
In the present embodiment, the width of the optical waveguide core is mainly determined by the line width of the mask design.
Step S105, the core layer after the photolithography is developed.
In this embodiment, a schematic diagram of the developing step is shown in fig. 5. And selecting a proper developing solution to develop the unexposed structure, and paying attention to control the developing time in the developing process. For example, the unexposed structure is developed sequentially with acetone and alcohol for 8s, and finally the developed core layer is washed with deionized water.
Step S106, preparing an upper cladding on the surface of the core layer to prepare the waveguide.
In this example, as shown in fig. 6, an upper clad layer 7 was prepared on the core layer, and the upper clad layer was subjected to ultraviolet exposure over a large area in a nitrogen atmosphere to cure the upper clad layer. Finally, the sample was placed on a hot plate and heat cured.
In this embodiment, the upper cladding material is selected from acrylate negative optical waveguide glue.
In this embodiment, the upper cladding layer can be prepared by spin coating
The invention utilizes the pre-exposure treatment of the core layer to ensure that the photoetching reaction can be carried out in the air environment. Specifically, a thin layer with high viscosity is formed on the surface of the core layer through large-area low-energy exposure of the core layer, and the thin layer can block the influence of oxygen on polymerization reaction in the photoetching process. The invention omits a nitrogen supply device in the photoetching process and has simple operation.
Claims (10)
1. A method of uv-lithography of an optical waveguide material, characterized by: pre-exposing the optical waveguide glue, controlling the intensity and time of the pre-exposure to form a semi-cured thin layer on the surface of the optical waveguide glue, and then carrying out ultraviolet photoetching and developing.
2. A method of uv lithography of an optical waveguide material according to claim 1, wherein: the pre-exposure treatment is to perform large-area and low-energy ultraviolet exposure on the optical waveguide glue in a nitrogen environment.
3. A method for preparing an optical waveguide based on ultraviolet lithography is characterized by comprising the following steps:
s1: preparing a lower cladding layer on a substrate;
s2: preparing a core layer on the lower cladding layer;
s3: pre-exposing the core layer;
s4: carrying out ultraviolet photoetching on the pre-exposed core layer;
s5: developing the core layer after photoetching is finished to obtain a core layer with a convex structure;
s6: an upper cladding layer is prepared on the core layer.
4. The method for preparing an optical waveguide based on ultraviolet lithography according to claim 3, wherein in S3: the pre-exposure treatment process is to carry out large-area and low-energy ultraviolet exposure in a nitrogen or other inert gas environment, and the surface of the core layer is in an incompletely cured state after the pre-exposure treatment.
5. The method for preparing an optical waveguide based on ultraviolet lithography according to claim 4, wherein in S4: and covering a mask on the core layer to perform ultraviolet photoetching.
6. The method for preparing an optical waveguide based on ultraviolet lithography according to claim 4, wherein: and after the upper cladding layer, the core layer or the lower cladding layer is formed, carrying out large-area ultraviolet exposure in a nitrogen or other inert gas environment.
7. The method for preparing an optical waveguide based on ultraviolet lithography according to claim 4, characterized in that: the preparation of the core layer or the lower cladding layer is realized by adopting processes such as spin coating, dip coating, doctor blade method and the like.
8. A method for manufacturing an optical waveguide based on uv lithography according to any one of claims 3 to 7, characterized in that: s7, the whole is thermally cured.
9. The method for manufacturing an optical waveguide based on uv lithography according to any one of claims 3 to 7, wherein in S1: and cleaning, baking and plasma treating the substrate, and then preparing the lower cladding.
10. The method for manufacturing an optical waveguide based on uv lithography according to claims 3-7, wherein in S6: the upper cladding layer is prepared by adopting the processes of spin coating, dip-coating and doctor blade method.
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Citations (7)
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| US4931380A (en) * | 1985-07-18 | 1990-06-05 | Microsi, Inc. | Pre-exposure method for increased sensitivity in high contrast resist development of positive working diazo ketone photoresist |
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2022
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| US4931380A (en) * | 1985-07-18 | 1990-06-05 | Microsi, Inc. | Pre-exposure method for increased sensitivity in high contrast resist development of positive working diazo ketone photoresist |
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| JP2007155789A (en) * | 2005-11-30 | 2007-06-21 | Fujifilm Corp | Post exposure method and apparatus for improving printing durability of planographic printing plate |
| US20070228608A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Preserving Filled Features when Vacuum Wiping |
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Non-Patent Citations (2)
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