CN114911003B - Optical waveguide preparation method based on cladding ultraviolet lithography - Google Patents
Optical waveguide preparation method based on cladding ultraviolet lithography Download PDFInfo
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- CN114911003B CN114911003B CN202210608246.1A CN202210608246A CN114911003B CN 114911003 B CN114911003 B CN 114911003B CN 202210608246 A CN202210608246 A CN 202210608246A CN 114911003 B CN114911003 B CN 114911003B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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Abstract
The preparation method of the optical waveguide based on cladding ultraviolet lithography comprises the following steps: preparing a lower cladding layer on a substrate; pre-exposing the lower cladding, namely exposing the lower cladding in a large-area low-energy ultraviolet mode in a nitrogen or other inert gas environment; carrying out ultraviolet lithography on the pre-exposed lower cladding in a conventional air environment; developing the lower cladding layer subjected to the photoetching to obtain a groove corresponding to the optical waveguide; preparing a core layer on the developed lower cladding layer, and performing large-area exposure and ultraviolet curing on the core layer in a nitrogen or other inert gas environment; and preparing an upper cladding layer on the solidified core layer, and performing large-area exposure and ultraviolet curing on the upper cladding layer in a nitrogen or other inert gas environment. The invention solves the problem of oxygen polymerization inhibition in the direct ultraviolet lithography process, does not need to provide nitrogen or other inert gas atmosphere in the ultraviolet lithography process, reduces roughness, and has simple operation and high preparation efficiency.
Description
Technical Field
The invention belongs to the fields of optical communication technology and microelectronics, and particularly relates to a preparation method of an optical waveguide.
Background
With the increasing demand for high-speed and high-density data transmission, short-distance optical interconnects have attracted considerable attention due to their high bandwidth and integration density, low power consumption and cost, and resistance to electromagnetic interference. The polymer material is widely applied to the preparation of optical waveguides due to the advantages of low cost, good flexibility, good compatibility with various substrates and the like. Acrylic-based photosensitive fluorinated polymers have good optical properties, especially with relatively low material absorption losses in the 1310nm and 1550nm communication bands. The common preparation method for the material is soft lithography and reactive ion etching. For soft lithography, the preparation process includes preparing a master, preparing a PDMS mold, and preparing a waveguide, which typically uses a sharp tool to manually peel off the PDMS mold, which is complex and prone to damage. For reactive ion etching, the equipment is expensive, and the roughness of the side wall is relatively large in the etching process. Compared with the preparation process, the ultraviolet lithography process is relatively simple, but the material can not complete the polymerization reaction under the air atmosphere due to the influence of oxygen inhibition, so that the material optical waveguide can not be prepared by ultraviolet lithography under the conventional air environment.
Disclosure of Invention
The invention aims to solve the technical problems that: the invention provides an improved ultraviolet lithography process, which aims to solve the problem of oxygen polymerization inhibition, realize the preparation of an optical waveguide based on cladding ultraviolet lithography in an air atmosphere, and simplify the preparation process of the optical waveguide.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a preparation method of an optical waveguide based on cladding ultraviolet lithography comprises the following steps:
s1: preparing a lower cladding layer on a substrate;
s2: pre-exposing the lower cladding layer to form a thin layer on the surface of the lower cladding layer;
s3: ultraviolet photoetching is carried out on the lower cladding according to the designed optical waveguide circuit, and a groove is prepared;
s4: developing the lower cladding after ultraviolet lithography to obtain a groove;
s5: preparing a core layer on the lower cladding layer and solidifying;
s6: an upper cladding layer is prepared on the cured core layer and cured.
S2: the pre-exposure treatment process is to perform large-area and low-energy ultraviolet exposure in nitrogen or other inert gas environment, and the surface of the lower cladding is not completely cured after the pre-exposure treatment.
S3: and covering a mask on the lower cladding layer, and carrying out ultraviolet lithography on the lower cladding layer according to the designed optical waveguide circuit to prepare the groove.
The preparation of the lower cladding layer in S1 means: and coating a layer of polymer on the upper surface of the substrate by adopting processes such as spin coating, dip-coating or doctor blade method.
In S5 and S6: the preparation of the core layer or the upper cladding layer is realized by adopting processes such as spin coating, dip-coating, drawing or a doctor blade method.
In S5 and S6: the curing of the core or upper cladding is by a large area uv exposure under nitrogen or other inert gas atmosphere.
And S7, integrally performing heat curing
S1: the lower cladding layer is prepared after the substrate is cleaned, baked and plasma treated.
S3: and determining whether the mask plate is a male plate or a female plate according to the characteristics of the selected glue.
The principle of the present application: the polymerization reaction rate is slowed down by carrying out large-area low-energy ultraviolet exposure on the lower cladding layer, so that a thin layer with high viscosity is formed on the surface of the lower cladding layer, and the thin layer can block the influence of oxygen on the polymerization reaction in the photoetching process, so that the photoetching process can be carried out in air.
Because the invention adopts the technical proposal, the invention has the following beneficial results:
1. according to the invention, the lower cladding is subjected to large-area pre-exposure treatment, so that the ultraviolet lithography process can be performed in an air environment, nitrogen or other inert gas atmosphere is not required to be provided in the ultraviolet lithography process, the preparation process is simplified, and the preparation efficiency is improved.
2. The waveguide structure prepared by the invention is parabolic, and the partially cured thin layer on the surface of the lower cladding layer can sink along with development in the development process, so that relatively smooth waveguide side walls are formed, which is beneficial to reducing the loss of the optical waveguide.
Drawings
FIG. 1 is a schematic flow chart of a method for fabricating an optical waveguide according to the present invention.
FIG. 2 is a schematic illustration of the preparation of a lower cladding layer on a substrate.
FIG. 3 is a schematic illustration of a large area pre-exposure of the lower cladding layer.
Fig. 4 is a schematic diagram of masked uv lithography of the lower cladding layer.
Fig. 5 is a schematic illustration of development of the lower cladding layer.
FIG. 6 is a schematic illustration of the preparation of a core layer and an upper cladding layer on the surface of a lower cladding layer.
Description of the embodiments
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Examples
The preparation method of the optical waveguide based on cladding ultraviolet lithography comprises the following steps:
step 1: preparing a lower cladding layer on a substrate;
step 2: pre-exposing the lower cladding;
step 3: performing ultraviolet lithography on the pre-exposed lower cladding;
step 4: developing the lower cladding layer which is subjected to the photoetching;
step 5: preparing a core layer on the surface of the lower cladding layer, and exposing;
step 6: an upper cladding layer is prepared on the surface of the core layer and exposed to light.
In the step 1, the substrate can be a substrate of a printed circuit board, a glass substrate, a silicon substrate and other materials, and the preparation of the polymer lower cladding can be realized by adopting processes such as spin coating, dip-coating, doctor-blading and the like.
And 2, performing pre-exposure treatment on the lower cladding layer, namely performing large-area and low-energy ultraviolet exposure on the lower cladding layer in a nitrogen environment, wherein proper ultraviolet curing energy and pre-exposure time can be selected according to the thickness of the lower cladding layer, and the whole pre-exposure process needs to be performed in nitrogen or other inert gas atmosphere.
In the step 3, the photolithography process is performed in a conventional air atmosphere, and a mask-equipped photolithography machine, a maskless photolithography machine, or other photolithography equipment can be used, so that the line width and the photolithography energy of the mask plate design can affect the depth of the groove.
And 5, preparing a core layer on the surface of the lower cladding layer, wherein the preparation of the core layer can be realized by adopting processes such as spin coating, dip-coating, doctor blade method and the like, and then carrying out large-area ultraviolet exposure and ultraviolet curing on the core layer in a nitrogen or other inert gas environment.
Step 6, preparing an upper cladding layer on the surface of the core layer, wherein the preparation of the upper cladding layer can be realized by adopting processes such as spin coating, dip-coating, doctor blade method and the like, and then carrying out large-area ultraviolet exposure and ultraviolet curing on the core layer in a nitrogen or other inert gas environment; finally, the prepared optical waveguide is thermally cured.
Example 2: step S101, preparing a lower cladding layer on a substrate.
In this example, the lower cladding layer was prepared on the substrate FR-4 board of a clean printed circuit board, as shown in FIG. 2. The FR-4 substrate 1 was cleaned by first cleaning in hot acetone and hot alcohol sequentially, wiping with cotton balls to prevent damage to the substrate surface during cleaning, then ultrasonic cleaning in deionized water, finally blow-drying with nitrogen, and baking at 120deg.C for 10min on a heated platen. Before the lower cladding layer 2 is prepared, the substrate is subjected to plasma treatment. A lower cladding layer 2 is then prepared on the cleaned FR-4 board 1 as shown in fig. 2. In this embodiment, the lower cladding layer may be prepared by spin coating, and the thickness of the lower cladding layer may be controlled by spin coating speed, and the thickness of the lower cladding layer 2 in this embodiment is 26.8 μm.
In this embodiment, the lower cladding material is selected from acrylic negative optical waveguide glue.
Step S102, pre-exposing the lower cladding layer.
In this embodiment, the pre-exposure treatment is to perform a large-area, low-energy ultraviolet exposure of the lower cladding layer in a nitrogen atmosphere, as shown in fig. 3. A nitrogen-gas-capable uv curing oven 4 is a preferred apparatus, and a suitable uv curing energy is input into the preparation device through the thickness of the lower cladding layer, and a timer is used to time the pre-exposure time. The pre-exposure layer 3 was prepared.
In this embodiment, the nitrogen in the exposure environment is ensured to be sufficient before pre-exposure.
And step S103, carrying out ultraviolet lithography on the pre-exposed lower cladding layer.
In this embodiment, the lithography process may be performed in air, and a schematic diagram of the lower cladding lithography is shown in fig. 4, with a mask lithography machine being a preferred apparatus. Depending on the nature of the glue selected, it is determined whether the mask 8 is a male or female plate. For example, the prepared photoresist is negative photoresist, the mask plate 8 is positive plate, namely, most of the mask plate is transparent, the light is not transmitted at the line position of the optical waveguide circuit, the exposed part 5 of the lower cladding layer is cured by ultraviolet, and the unexposed part is provided with the pre-exposure layer 3 and the unexposed layer 2.
In this embodiment, the line width and the lithography energy of the mask plate 8 design affect the depth of the groove.
Step S104, developing the lower cladding layer after the lithography is completed.
In this embodiment, a schematic diagram of the developing step is shown in fig. 5. And selecting proper developing solution to develop the unexposed structure, and carefully controlling the developing time in the developing process. For example, acetone and alcohol are sequentially used to develop the unexposed structure for 12 seconds, and finally deionized water is used to wash the developed lower cladding.
Steps S105 and S106, preparing a core layer and an upper cladding layer on the surface of the lower cladding layer to prepare a waveguide.
In this example, as shown in fig. 6, a core layer 6 was prepared on the surface of the lower cladding layer, and then the core layer was subjected to large-area uv exposure in a nitrogen atmosphere to cure the core layer. Subsequently, an upper cladding 7 was prepared on the core layer, and the upper cladding was also subjected to a large-area ultraviolet exposure under a nitrogen atmosphere, and cured. Finally, the sample was placed on a hot plate and thermally cured.
In this embodiment, the core layer and the upper cladding layer are both made of acrylic negative optical waveguide glue.
In this embodiment, the core layer and the upper cladding layer may be prepared by spin coating.
The invention uses pre-exposure treatment of the lower cladding layer to make the photoetching reaction possible to be carried out in an air environment. Specifically, by exposing the lower cladding layer to light with large area and low energy, a thin layer with high viscosity is formed on the surface of the lower cladding layer, and the thin layer can prevent the influence of oxygen on polymerization reaction in the photoetching process. The invention omits a nitrogen supply device in the photoetching process, and has simple operation. In addition, the partially cured thin layer of the lower cladding surface of the present invention may sag as the development proceeds, thereby forming relatively smooth waveguide sidewalls, which is advantageous for the fabrication of low loss waveguides.
Claims (8)
1. The preparation method of the optical waveguide based on cladding ultraviolet lithography is characterized by comprising the following steps:
s1: preparing a lower cladding layer on a substrate;
s2: pre-exposing the lower cladding, wherein the pre-exposure treatment process is to perform ultraviolet exposure in a nitrogen or other inert gas environment, proper ultraviolet curing energy and pre-exposure time are selected according to the thickness of the lower cladding, the surface of the lower cladding is in a state of not being fully cured after the pre-exposure treatment, and a thin layer with high viscosity is formed on the surface of the lower cladding;
s3: ultraviolet photoetching is carried out on the lower cladding according to the designed optical waveguide circuit, and a groove is prepared;
s4: developing the lower cladding after ultraviolet lithography to obtain a groove;
s5: preparing a core layer on the lower cladding layer and solidifying;
s6: preparing an upper cladding layer on the solidified core layer and solidifying;
the thin layer on the surface of the lower cladding layer can block the influence of oxygen on polymerization reaction in the photoetching process, and a nitrogen supply device in the photoetching process is omitted.
2. The method for preparing an optical waveguide based on cladding ultraviolet lithography according to claim 1, wherein in S3: and (3) covering a mask plate on the lower cladding layer for ultraviolet lithography, and obtaining the optical waveguide groove after development.
3. The method for manufacturing an optical waveguide based on cladding ultraviolet lithography according to claim 1, wherein the step of manufacturing the lower cladding in S1 means: and coating a layer of lower cladding polymer on the upper surface of the substrate by adopting a spin coating, dip-coating or doctor blade method process.
4. The method for manufacturing an optical waveguide based on cladding ultraviolet lithography according to claim 1, wherein in S5 and S6: the preparation of the core layer or the upper cladding layer is realized by adopting a spin coating, dip-coating or doctor blade method process.
5. The method for manufacturing an optical waveguide based on cladding ultraviolet lithography according to claim 1, wherein in S5 and S6: the curing of the core or upper cladding is by a large area uv exposure under nitrogen or other inert gas atmosphere.
6. The method for manufacturing an optical waveguide based on cladding ultraviolet lithography according to any one of claims 1 to 5, wherein: and S7, performing overall heat curing.
7. The method for manufacturing an optical waveguide based on cladding ultraviolet lithography according to any one of claims 1 to 5, wherein in S1: the lower cladding layer is prepared after the substrate is cleaned, baked and plasma treated.
8. The method for preparing an optical waveguide based on cladding ultraviolet lithography according to claim 2, wherein in S3: and determining whether the mask plate is a male plate or a female plate according to the characteristics of the selected glue.
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| CN202210608246.1A CN114911003B (en) | 2022-05-31 | 2022-05-31 | Optical waveguide preparation method based on cladding ultraviolet lithography |
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