CN114911003B - Optical waveguide preparation method based on cladding ultraviolet lithography - Google Patents
Optical waveguide preparation method based on cladding ultraviolet lithography Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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Abstract
Description
技术领域Technical field
本发明属于光通信技术及微电子领域,具体涉及一种光波导的制备方法。The invention belongs to the fields of optical communication technology and microelectronics, and specifically relates to a method for preparing an optical waveguide.
背景技术Background technique
随着对高速和高密度数据传输的需求日益增加,短距离光互连以其高带宽和集成密度、低功耗和成本以及抗电磁干扰等优点引起了广泛的关注。聚合物材料由于成本低、柔韧性好、对各种基板的兼容性好等优点被广泛的应用于制备光波导。基于丙烯酸的光敏氟化聚合物具有良好的光学特性,尤其在1310nm及1550nm通信波段的材料吸收损耗相对较低。对于该材料常用的制备方法有软光刻以及反应离子刻蚀。对于软光刻,其制备过程包括制备母版、制备PDMS模具以及制备波导,该方法通常利用锋利的工具手动剥离PDMS模板,操作过程复杂且易破坏结构。对于反应离子刻蚀,其设备昂贵,刻蚀过程中侧壁粗糙度相对较大。而紫外光刻工艺相对于上述制备工艺相对简单,但该材料由于氧抑制的影响,无法在空气氛围下完成聚合反应,因此,在常规空气环境下无法紫外光刻制备该类材料光波导。With the increasing demand for high-speed and high-density data transmission, short-distance optical interconnections have attracted widespread attention due to their advantages such as high bandwidth and integration density, low power consumption and cost, and immunity to electromagnetic interference. Polymer materials are widely used in the preparation of optical waveguides due to their low cost, good flexibility, and good compatibility with various substrates. Photosensitive fluorinated polymers based on acrylic acid have good optical properties, especially the material absorption loss in the 1310nm and 1550nm communication bands is relatively low. Commonly used preparation methods for this material include soft photolithography and reactive ion etching. For soft lithography, the preparation process includes preparing a master, preparing a PDMS mold, and preparing a waveguide. This method usually uses sharp tools to manually peel off the PDMS template. The operation process is complicated and the structure is easily damaged. For reactive ion etching, the equipment is expensive and the sidewall roughness is relatively large during the etching process. The UV lithography process is relatively simple compared to the above preparation process. However, due to the influence of oxygen inhibition, this material cannot complete the polymerization reaction in an air atmosphere. Therefore, UV lithography cannot prepare optical waveguides of this type of material in a conventional air environment.
发明内容Contents of the invention
本发明所要解决的技术问题:本发明提出一种改进的紫外光刻工艺,旨在解决氧阻聚问题,在空气氛围下基于包层紫外光刻实现光波导的制备,简化光波导的制备工艺。Technical problems to be solved by the present invention: The present invention proposes an improved ultraviolet lithography process, aiming to solve the problem of oxygen inhibition, realize the preparation of optical waveguides based on cladding ultraviolet lithography in an air atmosphere, and simplify the preparation process of optical waveguides. .
为实现上述目的,本发明采用如下技术方案:In order to achieve the above objects, the present invention adopts the following technical solutions:
一种基于包层紫外光刻的光波导制备方法,包括:An optical waveguide preparation method based on cladding ultraviolet lithography, including:
S1:在基板上制备下包层;S1: Preparing the lower cladding layer on the substrate;
S2:对下包层进行预曝光,在下包层表面形成了一层薄层;S2: Pre-expose the lower cladding to form a thin layer on the surface of the lower cladding;
S3:对下包层按照设计的光波导线路进行紫外光刻,制备凹槽;S3: Perform UV lithography on the lower cladding layer according to the designed optical waveguide line to prepare grooves;
S4:对完成紫外光刻的下包层进行显影,得到凹槽;S4: Develop the lower cladding layer that has completed UV lithography to obtain grooves;
S5:在下包层上制备芯层并固化;S5: Prepare the core layer on the lower cladding layer and cure it;
S6:在固化的芯层上制备上包层并固化。S6: Prepare the upper cladding layer on the cured core layer and cure it.
S2中:预曝光处理过程为在氮气或其他惰性气体环境下进行大面积、低能量的紫外曝光,下包层表面在预曝光处理后是未完全固化的状态。In S2: The pre-exposure process is a large-area, low-energy UV exposure in a nitrogen or other inert gas environment. The surface of the lower cladding is not fully cured after the pre-exposure process.
S3中:在下包层上加盖掩模对下包层按照设计的光波导线路进行紫外光刻,制备凹槽。In S3: Add a mask to the lower cladding layer, perform UV photolithography on the lower cladding layer according to the designed optical waveguide line, and prepare grooves.
在S1中制备下包层是指:采用旋转涂敷、浸渍提拉或刮刀法等工艺在基板上表面覆盖一层聚合物。Preparing the lower cladding layer in S1 means covering the surface of the substrate with a layer of polymer using processes such as spin coating, dipping and pulling, or a doctor blade method.
在S5和S6中:芯层或上包层的制备采用旋转涂敷、浸渍提拉或刮刀法等工艺实现。In S5 and S6: The core layer or upper cladding layer is prepared by processes such as spin coating, dipping and pulling, or scraper methods.
在S5和S6中:芯层或上包层的固化是在氮气或其他惰性气体环境下进行大面积紫外曝光。In S5 and S6: The core layer or upper cladding layer is cured by large-area UV exposure in a nitrogen or other inert gas environment.
还包括S7,整体进行热固化Also includes S7, which is thermally cured as a whole
S1中:对基板进行清洗、烘烤和等离子处理后再制备下包层。In S1: The substrate is cleaned, baked and plasma treated before preparing the lower cladding layer.
S3中:根据所选择的胶的特点,确定掩模板为阳板还是阴板。In S3: According to the characteristics of the selected glue, determine whether the mask plate is a positive plate or a negative plate.
本发明申请的原理:通过对下包层进行大面积、低能量紫外曝光,使得聚合反应速率变慢,因而在下包层表面形成了一层高粘度的薄层,该层可阻挡光刻过程中氧气对聚合反应的影响,使光刻过程可以在空气中进行。The principle of the application of the present invention: by subjecting the lower cladding to large-area, low-energy ultraviolet exposure, the polymerization reaction rate is slowed down, thus forming a thin layer of high viscosity on the surface of the lower cladding, which can block the photolithography process. The influence of oxygen on the polymerization reaction allows the photolithography process to be performed in air.
由于本发明采用了以上技术方案,具有以下有益结果:Since the present invention adopts the above technical solutions, it has the following beneficial results:
1. 本发明通过对下包层进行大面积预曝光处理,使紫外光刻过程可以在空气环境下进行,无需在紫外光刻过程中的提供氮气或其他惰性气体氛围,简化了制备过程,提升了制备效率。1. By performing a large-area pre-exposure treatment on the lower cladding layer, the present invention enables the UV lithography process to be carried out in an air environment, without the need to provide nitrogen or other inert gas atmosphere during the UV lithography process, simplifying the preparation process and improving improve preparation efficiency.
2.本发明制备的波导结构呈抛物线状,且由于在显影过程中,下包层表面的部分固化的薄层会随着显影的进行下沉,因而形成相对光滑的波导侧壁,这有利于降低光波导损耗。2. The waveguide structure prepared by the present invention is parabolic, and because during the development process, the partially solidified thin layer on the surface of the lower cladding will sink as the development proceeds, thus forming a relatively smooth waveguide side wall, which is conducive to Reduce optical waveguide losses.
附图说明Description of the drawings
图 1 是本发明光波导制备方法的流程示意图。Figure 1 is a schematic flow chart of the optical waveguide preparation method of the present invention.
图 2 是在基板上制备下包层的示意图。Figure 2 is a schematic diagram of preparing the lower cladding layer on the substrate.
图 3 是对下包层大面积预曝光的示意图。Figure 3 is a schematic diagram of large-area pre-exposure of the lower cladding.
图 4 是对下包层有掩模紫外光刻的示意图。Figure 4 is a schematic diagram of masked UV lithography of the lower cladding layer.
图 5 是对下包层显影的示意图。Figure 5 is a schematic diagram of developing the lower cladding.
图 6 是在下包层表面制备芯层和上包层的示意图。Figure 6 is a schematic diagram of preparing the core layer and the upper cladding layer on the surface of the lower cladding layer.
实施方式Implementation
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
实施例Example
一种基于包层紫外光刻的光波导制备方法,其过程包括以下步骤:An optical waveguide preparation method based on cladding ultraviolet lithography, the process includes the following steps:
步骤1:在基板上制备下包层;Step 1: Prepare the lower cladding layer on the substrate;
步骤2:下包层进行预曝光;Step 2: Pre-expose the lower cladding layer;
步骤3:预曝光后的下包层进行紫外光刻;Step 3: UV lithography is performed on the pre-exposed lower cladding layer;
步骤4:对光刻完成的下包层进行显影;Step 4: Develop the lower cladding layer after photolithography;
步骤5:下包层表面上制备芯层,并曝光;Step 5: Prepare the core layer on the surface of the lower cladding layer and expose it;
步骤6:芯层表面上制备上包层,并曝光。Step 6: Prepare the upper cladding layer on the surface of the core layer and expose it.
所述步骤1,基板可以采用印刷电路板的基板、玻璃基板、硅基板等材料,聚合物下包层制备可以采用旋转涂敷、浸渍提拉、刮刀法等工艺实现。In step 1, the substrate can be made of a printed circuit board substrate, a glass substrate, a silicon substrate or other materials, and the preparation of the polymer lower cladding layer can be achieved by processes such as spin coating, dipping and pulling, or a scraper method.
所述步骤2,对下包层的预曝光处理为在氮气环境下对下包层进行大面积、低能量的紫外曝光,可根据所述的下包层的厚度,在选择合适的紫外光固化能量及预曝光时间,预曝光整个过程需要在氮气或其他惰性气体氛围中进行。In step 2, the pre-exposure treatment of the lower cladding is to perform large-area, low-energy UV exposure on the lower cladding in a nitrogen environment. The appropriate UV curing can be selected according to the thickness of the lower cladding. Energy and pre-exposure time. The entire pre-exposure process needs to be carried out in a nitrogen or other inert gas atmosphere.
所述步骤3,光刻过程在常规空气氛围中进行,可以利用有掩模的光刻机或无掩模的光刻机等光刻设备,掩模板设计的线条宽度与光刻能量均会影响凹槽的深度。In step 3, the photolithography process is carried out in a regular air atmosphere. Photolithography equipment such as a masked photolithography machine or a maskless photolithography machine can be used. The line width of the mask plate design and the photolithography energy will both affect the process. The depth of the groove.
所述步骤5,在下包层表面制备芯层,芯层制备可以采用旋转涂敷、浸渍提拉、刮刀法等工艺实现,之后在氮气或其他惰性气体环境下对芯层进行大面积紫外曝光,紫外固化芯层。The step 5 is to prepare a core layer on the surface of the lower cladding. The preparation of the core layer can be achieved by processes such as spin coating, dipping and pulling, and scraper methods. Afterwards, the core layer is exposed to large-area UV in a nitrogen or other inert gas environment. UV cured core layer.
所述步骤6,在芯层表面制备上包层,上包层制备可以采用旋转涂敷、浸渍提拉、刮刀法等工艺实现,之后在氮气或其他惰性气体环境下对芯层进行大面积紫外曝光,紫外固化上包层;最后,对所制备光波导进行热固化。The step 6 is to prepare the upper cladding layer on the surface of the core layer. The preparation of the upper cladding layer can be achieved by processes such as spin coating, dipping and pulling, and scraper methods. Afterwards, the core layer is subjected to large-area UV in a nitrogen or other inert gas environment. Exposure, UV curing of the upper cladding layer; finally, the prepared optical waveguide is thermally cured.
实施例2:步骤S101,在基板上制备下包层。Example 2: Step S101, prepare a lower cladding layer on the substrate.
在本实施例中,在洁净的印刷电路板的基板FR-4板上制备下包层,如图2所示。FR-4基板1的清洗过程如下,首先依次在热丙酮与热酒精中清洗,清洗过程中,为防止破坏基板表面,用棉球进行擦拭,然后放入去离子水中超声清洗,最后用氮气吹干,置于加热平台上以120℃烘烤10min。制备下包层2之前,对基板进行等离子处理。后在清洗洁净的FR-4板1上制备下包层2,如图2所示。本实施例中可以采用旋转涂敷的方式制备下包层,下包层厚度可以通过旋涂速度进行控制,本实施例中下包层2的厚度为26.8μm。In this embodiment, a lower cladding layer is prepared on the FR-4 substrate of a clean printed circuit board, as shown in Figure 2. The cleaning process of FR-4 substrate 1 is as follows. First, clean it in hot acetone and hot alcohol in sequence. During the cleaning process, in order to prevent damage to the substrate surface, wipe it with a cotton ball, then put it into deionized water for ultrasonic cleaning, and finally blow it with nitrogen. Dry, place on the heating platform and bake at 120°C for 10 minutes. Before preparing the lower cladding layer 2, the substrate is subjected to plasma treatment. Finally, prepare the lower cladding layer 2 on the cleaned FR-4 board 1, as shown in Figure 2. In this embodiment, spin coating can be used to prepare the lower cladding layer, and the thickness of the lower cladding layer can be controlled by the spin coating speed. In this embodiment, the thickness of the lower cladding layer 2 is 26.8 μm.
在本实施例中,下包层材料选择的为丙烯酸酯类负性光波导胶。In this embodiment, the material selected for the lower cladding layer is acrylic negative optical waveguide glue.
步骤S102,对所述下包层进行预曝光。Step S102: Pre-expose the lower cladding layer.
在本实施例中,预曝光处理如图3所示,预曝光处理为在氮气环境下对下包层进行大面积、低能量的紫外曝光。可通氮气的紫外固化烤箱4为优选设备,通过所述的下包层的厚度,在制备装置中输入合适的紫外固化能量,采用计时器对预曝光时间进行计时。制备得到预曝光层3。In this embodiment, the pre-exposure process is as shown in Figure 3. The pre-exposure process involves large-area, low-energy ultraviolet exposure of the lower cladding layer in a nitrogen environment. The ultraviolet curing oven 4 that can pass nitrogen gas is the preferred equipment. According to the thickness of the lower cladding layer, appropriate ultraviolet curing energy is input into the preparation device, and a timer is used to time the pre-exposure time. Pre-exposed layer 3 is prepared.
在本实施例中,预曝光之前要保证曝光环境中氮气充分。In this embodiment, it is necessary to ensure that there is sufficient nitrogen in the exposure environment before pre-exposure.
步骤S103,对所述预曝光后的下包层进行紫外光刻。Step S103: Perform ultraviolet photolithography on the pre-exposed lower cladding layer.
在本实施例中,光刻过程可在空气中进行,对下包层光刻的示意图如图4所示,有掩模光刻机为优选设备。根据所选择的胶的特点,确定掩模板8为阳板还是阴板。例如,制备的光刻胶为负胶,确定掩模板8为阳板,即,大部分透光,光波导线路的线条处不透光,下包层曝光的部分5被紫外固化,未曝光的部分有预曝光层3与未曝光层2。In this embodiment, the photolithography process can be performed in the air. A schematic diagram of the photolithography of the lower cladding layer is shown in Figure 4. A masked photolithography machine is the preferred equipment. According to the characteristics of the selected glue, it is determined whether the mask plate 8 is a positive plate or a negative plate. For example, the prepared photoresist is a negative resist, and the mask plate 8 is determined to be a positive plate, that is, most of the light is transmitted, the lines of the optical waveguide lines are opaque, the exposed part 5 of the lower cladding is cured by ultraviolet, and the unexposed parts There are pre-exposed layer 3 and unexposed layer 2.
在本实施例中,掩模板8设计的线条宽度与光刻能量均会影响凹槽的深度。In this embodiment, both the line width and photolithography energy designed in the mask plate 8 will affect the depth of the groove.
步骤S104,对光刻完成的下包层进行显影。Step S104: Develop the lower cladding layer after photolithography.
本实施例中,显影步骤的示意图如图5所示。选择合适的显影液对未曝光结构进行显影,显影过程中注意控制显影时间。例如,依次采用丙酮和酒精对未曝光结构进行显影,显影时间分别为12s,最后用去离子水清洗显影后的下包层。In this embodiment, a schematic diagram of the development step is shown in Figure 5. Choose a suitable developer to develop the unexposed structure, and pay attention to controlling the development time during the development process. For example, acetone and alcohol are used to develop the unexposed structure in sequence, and the development time is 12 seconds respectively. Finally, deionized water is used to clean the developed lower cladding layer.
步骤S105和S106,在所述下包层表面上制备芯层与上包层,以制备波导。Steps S105 and S106, prepare a core layer and an upper cladding layer on the surface of the lower cladding layer to prepare a waveguide.
本实施例中,如图6所示,在下包层表面制备芯层6,后对芯层在氮气环境下对其进行大面积紫外曝光,固化芯层。随后在芯层上制备上包层7,同样对上包层在氮气环境下对其进行大面积紫外曝光,固化上包层。最后,将样品放置热板上,进行热固化。In this embodiment, as shown in FIG. 6 , a core layer 6 is prepared on the surface of the lower cladding layer, and then the core layer is exposed to large-area UV in a nitrogen environment to cure the core layer. Then, an upper cladding layer 7 is prepared on the core layer, and the upper cladding layer is also exposed to large-area ultraviolet light in a nitrogen environment to cure the upper cladding layer. Finally, the sample was placed on a hot plate for thermal curing.
在本实施例中,芯层和上包层材料选择的均为丙烯酸酯类负性光波导胶。In this embodiment, the core layer and the upper cladding layer are both made of acrylic negative optical waveguide glue.
在本实施例中,可以采用旋涂的方式制备芯层和上包层。In this embodiment, spin coating can be used to prepare the core layer and the upper cladding layer.
本发明利用对下包层的预曝光处理,使光刻反应可以在空气环境下进行。具体的,通过对下包层的大面积低能量曝光,使得下包层表面形成了一层高粘度的薄层,该层可阻挡光刻过程中氧气对聚合反应的影响。本发明省去了光刻过程中的氮气供给装置,操作简单。另外,本发明在显影过程中,下包层表面的部分固化的薄层会随着显影的进行下沉,因而形成相对光滑的波导侧壁,这有利于制备低损耗波导。The present invention utilizes the pre-exposure treatment of the lower cladding layer so that the photolithography reaction can be carried out in an air environment. Specifically, through large-area low-energy exposure of the lower cladding layer, a thin layer of high viscosity is formed on the surface of the lower cladding layer, which can block the influence of oxygen on the polymerization reaction during the photolithography process. The invention eliminates the nitrogen supply device in the photolithography process and is simple to operate. In addition, during the development process of the present invention, the partially cured thin layer on the surface of the lower cladding layer will sink as the development proceeds, thus forming a relatively smooth waveguide side wall, which is beneficial to the preparation of low-loss waveguides.
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