CN114927935B - Heat sink and laser - Google Patents
Heat sink and laser Download PDFInfo
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- CN114927935B CN114927935B CN202210849952.5A CN202210849952A CN114927935B CN 114927935 B CN114927935 B CN 114927935B CN 202210849952 A CN202210849952 A CN 202210849952A CN 114927935 B CN114927935 B CN 114927935B
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- positive electrode
- layer structure
- resistance
- heat sink
- base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
Abstract
The invention provides a heat sink and a laser, which relate to the technical field of lasers, wherein the heat sink comprises: the chip comprises a base, a first positive electrode and a second positive electrode, wherein the base is provided with the first positive electrode and the second positive electrode, the first positive electrode is used for being in butt joint with a laser area of a sectional chip, and the second positive electrode is used for being in butt joint with a transparent area of the sectional chip; the second positive electrode has a high-resistance portion formed of a high-resistance material therein so that the second positive electrode has a resistance greater than that of the first positive electrode. When the second positive electrode is prepared, a high-resistance material is added to form a high-resistance portion in the second positive electrode, so that the resistance of the second positive electrode is greater than that of the first positive electrode. Thus, the laser and transparent regions on the segmented chip can be accommodated by applying the same voltage to the first and second anodes, resulting in a larger current in the first anode and a relatively smaller current in the second anode.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a heat sink and a laser.
Background
The existing segmented chip includes: the main part, the upper surface of main part is provided with the spine structure, and the orientation is close to the light-emitting cavity face direction, the spine structure has laser region and the transparent region that sets up in proper order and interval. The upper surface of the ridge structure is provided with a first positive electrode structure corresponding to the laser area and a second positive electrode structure corresponding to the transparent area. The working current I1 is applied to the laser area, and a laser beam is generated in the laser area. And applying current I2 to the transparent region, wherein I2 is less than I1, and the transparent region is used as a transparent waveguide to guide the laser beam out of the chip, so that the loss of the pump light in the transparent region is reduced.
When the sectional chip is packaged, a first positive electrode butted with the laser area and a second positive electrode butted with the transparent area are arranged on the heat sink. The sectional chip cannot complete Pdown (ridge structure face down) packaging through a conventional heat sink, cannot realize injection of currents with different sizes (large difference) into a laser area and a transparent area, and needs to input different voltages to a first positive electrode and a second positive electrode respectively, so that the sectional chip cannot adapt to an existing standard packaging piece and needs to additionally increase an input port.
Disclosure of Invention
The invention aims to provide a heat sink and a laser, which are used for solving the technical problems that the existing heat sink cannot realize the injection of currents with different sizes into a laser area and a transparent area, and different voltages need to be input into a first positive electrode and a second positive electrode respectively, so that the existing standard packaging piece cannot be adapted, and an additional input port needs to be added.
In a first aspect, an embodiment of the present invention provides a heat sink, including: the base is provided with a first positive electrode and a second positive electrode, the first positive electrode is used for being butted with a laser area of the sectional chip, and the second positive electrode is used for being butted with a transparent area of the sectional chip;
the second positive electrode has therein a high-resistance portion formed of a high-resistance material so that the second positive electrode has a resistance greater than that of the first positive electrode.
Further, the second positive electrode includes a first layer structure and a second layer structure, the second layer structure is formed of a material having a resistance larger than that of a material forming the first layer structure, and the second layer structure forms a high-resistance portion;
the first layer structure is connected with the base, the second layer structure is connected with the first layer structure, and the first layer structure is located between the base and the second layer structure.
Furthermore, the second layer structure is connected with a third layer structure, and the third layer structure covers the upper surface of the second layer structure.
Further, the material of the third layer structure is the same as that of the first layer structure.
Further, the second positive electrode includes a first portion and a second portion both connected to the base, the first portion is formed of a material having a smaller resistance than a material forming the second portion, and the second portion forms the high resistance portion.
Further, the second positive electrode is internally provided with a heat resistance layer, and the heat resistance layer is used for reducing heat conduction of the base towards the chip.
Further, the high-resistance material is silicon carbide.
Further, the first positive electrode includes at least a third portion and a fourth portion, and the fourth portion is formed of a material having a lower resistance than a material forming the third portion.
Further, the first positive electrode comprises a fourth layer structure and a fifth layer structure which are sequentially connected from bottom to top, the fourth layer structure forms the third part, and the fifth layer structure forms the fourth part.
In a second aspect, an embodiment of the present invention provides a laser, including the heat sink described above.
The heat sink provided by the embodiment of the invention comprises: the base is provided with a first positive electrode and a second positive electrode, the first positive electrode is used for being butted with a laser area of the sectional chip, and the second positive electrode is used for being butted with a transparent area of the sectional chip; the second positive electrode has a high-resistance portion formed of a high-resistance material therein so that the second positive electrode has a resistance greater than that of the first positive electrode. When the second positive electrode is prepared, a high-resistance material is added to form a high-resistance portion in the second positive electrode, so that the resistance of the second positive electrode is greater than that of the first positive electrode. Thus, the laser and transparent regions on the segmented chip can be accommodated by applying the same voltage to the first and second anodes, resulting in a larger current in the first anode and a relatively smaller current in the second anode. By adopting the heat sink matching sectional type chip, the purpose of inputting different currents into the laser area and the transparent area of the chip can be realized by adopting a mode of inputting the same voltage into the first anode and the second anode without increasing the design of a power supply end, and the chip can adapt to the existing standard packaging piece without additionally increasing an input port.
The laser provided by the embodiment of the invention comprises the heat sink. Because the laser provided by the embodiment of the invention uses the heat sink, the laser provided by the embodiment of the invention also has the advantages of the heat sink.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a top view of a first heat sink provided in an embodiment of the present invention;
FIG. 2 is a cross-sectional view of the heatsink of FIG. 1;
fig. 3 is a cross-sectional view of a second heat sink provided by an embodiment of the present invention;
fig. 4 is a cross-sectional view of a third heat sink provided by an embodiment of the present invention;
fig. 5 is a cross-sectional view of a fourth heat sink provided by an embodiment of the present invention;
fig. 6 is a top view of a fifth heat sink provided by the embodiment of the present invention;
fig. 7 is a cross-sectional view of the heatsink of fig. 6;
fig. 8 is a cross-sectional view of a sixth heat sink provided by an embodiment of the present invention.
An icon: 1-a first positive electrode; 11-a fourth layer structure; 12-a fifth layer structure; 2-a second positive electrode; 21-a first layer structure; 22-a second layer structure; 23-a third layer structure; 24-a first part; 25-a second part; 26-a thermal barrier; 3-a negative electrode; 4-a base; 41-heat insulation structure.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be apparent that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The heat sink provided by the embodiment of the invention comprises a base 4, wherein the base 4 is provided with a first positive electrode 1 and a second positive electrode 2, the first positive electrode 1 is used for being butted with a laser area of a sectional type chip, and the second positive electrode 2 is used for being butted with a transparent area of the sectional type chip.
As shown in fig. 1 and fig. 2, the base 4 includes a ceramic substrate, and a monolithic metal layer is covered on the lower surface of the ceramic substrate, and the material of the metal layer may be metallic copper; the upper surface of the ceramic substrate is provided with a first anode 1, a second anode 2 and a cathode 3, and the main materials of the first anode 1, the second anode 2 and the cathode 3 can be metallic copper. The metallization treatment of the upper surface and the lower surface of the ceramic substrate can facilitate the welding of the bottom heat dissipation part and prevent the stress problem of heat sink expansion with heat and contraction with cold. Metal copper is often used as an electrode because of its good conductivity, and in this embodiment, the main materials of the first positive electrode 1 and the second positive electrode 2 may be the same, both are metal copper, or may be other different materials. The first positive electrode 1, the second positive electrode 2 and the negative electrode 3 can be isolated by etching trenches.
The second positive electrode 2 includes a high-resistance portion formed of a high-resistance material in addition to a main portion, wherein the main portion refers to a base material forming the second positive electrode 2, and metal copper is commonly used in the art, that is, a material occupying a relatively large portion of the second positive electrode 2 is metal copper. When the second positive electrode 2 is prepared, the high-resistance material is added, and the high-resistance part is formed in the second positive electrode 2, so that the resistance value of the whole second positive electrode 2 can be greatly improved due to the addition of the high-resistance material, and the resistance of the second positive electrode 2 is larger than that of the first positive electrode 1. Therefore, by applying the same voltage to the first positive electrode 1 and the second positive electrode 2, a larger current can be generated in the first positive electrode 1 and a relatively smaller current can be generated in the second positive electrode 2, thereby adapting to different current requirements of the laser area and the transparent area on the segmented chip. By adopting the heat sink matching sectional type chip, the purpose of inputting different currents into the laser area and the transparent area of the chip can be realized by adopting the mode of inputting the same voltage into the first anode 1 and the second anode 2 without increasing the design of a power supply end, and the chip can adapt to the existing standard packaging piece without additionally increasing an input port.
Here, the high-resistance material added to the second positive electrode 2 may be silicon carbide (SiC), and other materials having high resistivity may be added to the second positive electrode 2.
The high-resistance portion may be formed of one high-resistance material or may be formed by mixing a plurality of high-resistance materials.
The second positive electrode 2 includes a first layer structure 21 and a second layer structure 22, the second layer structure 22 is formed of a material having a higher electrical resistance than a material forming the first layer structure 21, and the second layer structure 22 forms a high-resistance portion; the first layer 21 is connected to the base 4, the second layer 22 is connected to the first layer 21, and the first layer 21 is located between the base 4 and the second layer 22.
As shown in fig. 2, the second positive electrode 2 may be a multi-layer structure, the first layer structure 21 contacting the base 4 may be a copper plated layer, and the second layer structure 22 may be a high resistance layer forming a high resistance portion, from bottom to top. In the preparation process, the first layer structure 21 can play a role in connecting the base 4 and the second layer structure 22, so that the high-resistance material can be fixed, the structural stability of the heat sink is improved, and the risk of falling of the high-resistance layer is reduced.
Further, in another possible implementation manner, as shown in fig. 3, a third layer structure 23 may be further connected to the second layer structure 22, and the third layer structure 23 covers an upper surface of the second layer structure 22. The material of the third layer structure 23 may be the same as that of the first layer structure 21, and the third layer structure 23 may be a copper plated layer. The second positive electrode 2 may be formed by sequentially processing the first layer structure 21, the second layer structure 22 and the third layer structure 23 in a layer-by-layer processing manner during the manufacturing process. And after the third layer structure 23 is prepared, the top surfaces of the first positive electrode 1 and the second positive electrode 2 may be leveled by grinding the third layer structure 23. Because the second layer structure 22 is thinner, the third layer structure 23 can protect the second layer structure 22 and provide a grinding allowance.
The material of the third layer structure 23 may be the same as that of the first layer structure 21, and is metal copper; the materials may also be different.
In a further possible embodiment, as shown in fig. 6 and 7, in which the second positive electrode 2 is not a layered structure, the second positive electrode 2 comprises a first portion 24 and a second portion 25 both connected to the base 4, the resistance of the material forming the first portion 24 being lower than the resistance of the material forming the second portion 25, the second portion 25 forming the high resistance portion. The material of the first portion 24 may be copper, the material of the second portion 25 may be silicon carbide, the first portion 24 and the second portion 25 may be both in the form of strips, and they are alternately arranged on the susceptor 4 one by one, and the two first portions 24 sandwich one second portion 25. The first part 24 made of metal copper and the base 4 have good bonding capacity, the two first parts 24 have the clamping and fixing effects on the second part 25 between the two first parts, the connection strength of the second part 25 and the base 4 is improved, and therefore the overall stability of the second anode 2 is improved.
As shown in fig. 8, when the laser region works, a large amount of heat is generated, the heat is transferred to the base 4 along the first positive electrode 1, the base 4 has good thermal conductivity, and if the heat is laterally transferred to the second positive electrode 2 and gradually transferred to the light exit cavity surface of the chip, damage may be generated on the light exit cavity surface, so in order to avoid thermal crosstalk from the first positive electrode 1, a thermal barrier 26 may be disposed in the second positive electrode 2, and the thermal barrier 26 is configured to reduce the thermal conductivity of the base 4 towards the chip. The heat-resistant layer 26 is made of a material with low heat conductivity, and the heat conductivity of the heat-resistant layer 26 is lower than that of copper, so that heat is prevented from being transferred from the base 4 to the chip, and the light-emitting cavity surface of the chip is protected. Since the heat generated by the transparent region of the segmented chip is much smaller than that generated by the laser region, the thermal insulation layer made of a material with low thermal conductivity does not affect the normal operation of the segmented chip, because the thermal insulation layer may be provided to cause the chip to fail to operate normally if other chips are used.
As shown in fig. 5, in order to avoid the light-emitting cavity surface being affected by the thermal crosstalk of the first positive electrode 1, a heat insulation structure 41 may be further disposed inside the base 4, the heat insulation structure 41 is located between the first positive electrode 1 and the second positive electrode 2, and the heat insulation structure 41 is configured to reduce the lateral conduction of heat inside the base 4 from the first positive electrode 1 toward the second positive electrode 2. Here, an accommodating groove extending in the left-right direction may be formed in the upper surface of the base 4, a distance between the left and right ends of the accommodating groove is greater than the length of the first positive electrode 1 and the second positive electrode 2 in the left-right direction, and a heat insulating material is filled in the accommodating groove, thereby forming the heat insulating structure 41.
The first positive electrode 1 may be made of the same material, such as copper, or may be made of a combination of materials, and in an implementation, as shown in fig. 4 and 8, the first positive electrode 1 includes at least a third portion and a fourth portion, and the resistance of the material forming the fourth portion is lower than the resistance of the material forming the third portion. Wherein, the material forming the third portion may be metallic copper. Since the resistance of the material of the fourth portion is smaller than that of copper, the resistance of the first positive electrode 1 in this embodiment is relatively smaller than that of the first positive electrode 1 which is entirely made of copper, and the resistance of the second positive electrode 2 can be appropriately smaller when the second positive electrode 2 is made, so that the requirement for the resistance of the second positive electrode 2 is reduced, and convenience is provided for the preparation of the second positive electrode 2.
Specifically, as shown in fig. 4 and 8, the first positive electrode 1 may have a multilayer structure. The first positive electrode 1 may include a fourth layer structure 11 and a fifth layer structure 12 connected in sequence from bottom to top, the fourth layer structure 11 forming the third portion, the fifth layer structure 12 forming the fourth portion. The material of the fourth layer 11 may be copper, the fourth layer 11 has a good bonding force with the base 4, and the fifth layer 12 may be fixed by the fourth layer 11.
Furthermore, a sixth layer structure may be further disposed above the fifth layer structure 12, the sixth layer structure is made of copper, the fourth layer structure 11, the fifth layer structure 12 and the sixth layer structure are formed by sandwiching the fifth layer structure 12 with a lower resistance between the fourth layer structure 11 and the sixth layer structure, so as to fix the fifth layer structure 12, and meanwhile, when the top surfaces of the first positive electrode 1 and the second positive electrode 2 are polished, the sixth layer structure can protect the fifth layer structure 12.
The laser provided by the embodiment of the invention comprises the heat sink. Because the laser provided by the embodiment of the invention uses the heat sink, the laser provided by the embodiment of the invention also has the advantages of the heat sink.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (13)
1. A heat sink, comprising: a base (4), wherein the base (4) is provided with a first positive electrode (1) and a second positive electrode (2), the first positive electrode (1) is used for being butted with a laser region of the sectional chip, and the second positive electrode (2) is used for being butted with a transparent region of the sectional chip;
the second positive electrode (2) is internally provided with a high-resistance part made of high-resistance material, so that the resistance of the second positive electrode (2) is larger than that of the first positive electrode (1);
the second positive electrode (2) includes a first layer structure (21) and a second layer structure (22), the second layer structure (22) is formed of a material having a resistance greater than that of a material forming the first layer structure (21), and the second layer structure (22) forms a high-resistance portion; the first layer structure (21) is connected with the base (4), the second layer structure (22) is connected with the first layer structure (21), and the first layer structure (21) is positioned between the base (4) and the second layer structure (22); the second layer structure (22) is connected with a third layer structure (23), and the third layer structure (23) covers the upper surface of the second layer structure (22); the top surfaces of the first positive electrode (1) and the second positive electrode (2) are flush.
2. A heat sink according to claim 1, characterized in that the material of the third layer structure (23) is the same as the material of the first layer structure (21).
3. A heat sink according to claim 1 or 2, wherein the high resistance material is silicon carbide.
4. A heat sink according to claim 1, characterized in that the first positive electrode (1) comprises at least a third part and a fourth part, the resistance of the material forming the fourth part being lower than the resistance of the material forming the third part.
5. A heat sink according to claim 4, characterized in that the first positive electrode (1) comprises a fourth layer structure (11) and a fifth layer structure (12) connected in sequence from bottom to top, the fourth layer structure (11) forming the third part and the fifth layer structure (12) forming the fourth part.
6. A heat sink according to claim 1, characterized in that the second anode (2) has a thermal barrier (26) therein, the thermal barrier (26) being adapted to reduce the heat conduction of the base (4) towards the chip.
7. A laser comprising a heat sink according to any of claims 1-6.
8. A heat sink, comprising: a base (4), wherein the base (4) is provided with a first positive electrode (1) and a second positive electrode (2), the first positive electrode (1) is used for being butted with a laser region of the sectional chip, and the second positive electrode (2) is used for being butted with a transparent region of the sectional chip;
the second positive electrode (2) is internally provided with a high-resistance part made of high-resistance material, so that the resistance of the second positive electrode (2) is larger than that of the first positive electrode (1);
the second positive electrode (2) is internally provided with a heat resistance layer (26), and the heat resistance layer (26) is used for reducing the heat conduction of the base (4) towards the chip.
9. A heat sink according to claim 8, characterized in that the second positive electrode (2) comprises a first portion (24) and a second portion (25) both connected to the base (4), the first portion (24) being formed of a material having a lower electrical resistance than the material forming the second portion (25), the second portion (25) forming the high resistance portion.
10. A heat sink according to any of claims 8-9, wherein the high resistance material is silicon carbide.
11. A heat sink according to claim 8, characterised in that the first positive electrode (1) comprises at least a third part and a fourth part, the resistance of the material forming the fourth part being lower than the resistance of the material forming the third part.
12. A heat sink according to claim 11, characterized in that the first positive electrode (1) comprises a fourth layer structure (11) and a fifth layer structure (12) connected in series from bottom to top, the fourth layer structure (11) forming the third part and the fifth layer structure (12) forming the fourth part.
13. A laser comprising a heat sink according to any of claims 8-12.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210849952.5A CN114927935B (en) | 2022-07-20 | 2022-07-20 | Heat sink and laser |
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| CN202210849952.5A CN114927935B (en) | 2022-07-20 | 2022-07-20 | Heat sink and laser |
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| CN114927935B true CN114927935B (en) | 2022-11-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6643308B2 (en) * | 2001-07-06 | 2003-11-04 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and method for suppressing injection current |
| US7129640B2 (en) * | 2003-06-03 | 2006-10-31 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Integrated circuit device for driving a laser diode with reduced heat transfer and method for fabricating the device |
| JP2006303299A (en) * | 2005-04-22 | 2006-11-02 | Sharp Corp | Semiconductor laser |
| CN101627474A (en) * | 2006-04-20 | 2010-01-13 | Nxp股份有限公司 | Thermal isolation of electronic devices in submount used for leds lighting applications |
| JP2008066406A (en) * | 2006-09-05 | 2008-03-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| US7567603B2 (en) * | 2006-09-20 | 2009-07-28 | Jds Uniphase Corporation | Semiconductor laser diode with advanced window structure |
| JP2013026254A (en) * | 2011-07-15 | 2013-02-04 | Sumitomo Electric Ind Ltd | Optical waveguide and method for manufacturing optical waveguide |
| CN103545700A (en) * | 2012-07-16 | 2014-01-29 | 徐卫文 | Integrated single-platform miniature laser |
| CN103887704B (en) * | 2014-03-27 | 2016-06-01 | 北京牡丹电子集团有限责任公司 | A kind of for semiconductor laser p towards the heat sink of lower encapsulation and making method thereof |
| WO2022121197A1 (en) * | 2020-12-10 | 2022-06-16 | 武汉光迅科技股份有限公司 | Thermal tuning semiconductor chip and preparation method therefor |
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