CN114927590A - 太阳能电池用玻璃基板和太阳能电池 - Google Patents

太阳能电池用玻璃基板和太阳能电池 Download PDF

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Publication number
CN114927590A
CN114927590A CN202210134278.2A CN202210134278A CN114927590A CN 114927590 A CN114927590 A CN 114927590A CN 202210134278 A CN202210134278 A CN 202210134278A CN 114927590 A CN114927590 A CN 114927590A
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CN
China
Prior art keywords
solar cell
transparent film
film layer
functional transparent
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202210134278.2A
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English (en)
Chinese (zh)
Inventor
岩田至弘
立川卓
高桥亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of CN114927590A publication Critical patent/CN114927590A/zh
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
CN202210134278.2A 2021-02-12 2022-02-14 太阳能电池用玻璃基板和太阳能电池 Withdrawn CN114927590A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021020874A JP2022123516A (ja) 2021-02-12 2021-02-12 太陽電池用ガラス基板及び太陽電池
JP2021-020874 2021-02-12

Publications (1)

Publication Number Publication Date
CN114927590A true CN114927590A (zh) 2022-08-19

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CN202210134278.2A Withdrawn CN114927590A (zh) 2021-02-12 2022-02-14 太阳能电池用玻璃基板和太阳能电池

Country Status (2)

Country Link
JP (1) JP2022123516A (https=)
CN (1) CN114927590A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115093128A (zh) * 2019-07-12 2022-09-23 Ａｇｃ株式会社 带有膜的玻璃基板及其制造方法
CN116002988A (zh) * 2022-12-12 2023-04-25 玻璃新材料创新中心(安徽)有限公司 一种太阳能电池用透明导电膜玻璃及其制备方法
CN116669448A (zh) * 2023-07-28 2023-08-29 淄博金晶新能源有限公司 钙钛矿太阳能电池用tco导电膜玻璃及其制备工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070169805A1 (en) * 2004-03-25 2007-07-26 Kaneka Corporation Substrate for thin-film solar cell, method for producing the same, and thin-film solar cell employing it
CN104600130A (zh) * 2015-01-13 2015-05-06 福建铂阳精工设备有限公司 一种硅基薄膜太阳能电池及其制备方法
KR102075687B1 (ko) * 2019-06-05 2020-02-10 주식회사 이건창호 균일한 색상을 가지는 건축용 유리판넬
CN112186048A (zh) * 2019-07-05 2021-01-05 Ａｇｃ株式会社 透明电极基板和太阳能电池

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021012948A (ja) * 2019-07-05 2021-02-04 Ａｇｃ株式会社 透明電極基板及び太陽電池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070169805A1 (en) * 2004-03-25 2007-07-26 Kaneka Corporation Substrate for thin-film solar cell, method for producing the same, and thin-film solar cell employing it
CN104600130A (zh) * 2015-01-13 2015-05-06 福建铂阳精工设备有限公司 一种硅基薄膜太阳能电池及其制备方法
KR102075687B1 (ko) * 2019-06-05 2020-02-10 주식회사 이건창호 균일한 색상을 가지는 건축용 유리판넬
CN112186048A (zh) * 2019-07-05 2021-01-05 Ａｇｃ株式会社 透明电极基板和太阳能电池

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115093128A (zh) * 2019-07-12 2022-09-23 Ａｇｃ株式会社 带有膜的玻璃基板及其制造方法
CN116002988A (zh) * 2022-12-12 2023-04-25 玻璃新材料创新中心(安徽)有限公司 一种太阳能电池用透明导电膜玻璃及其制备方法
CN116669448A (zh) * 2023-07-28 2023-08-29 淄博金晶新能源有限公司 钙钛矿太阳能电池用tco导电膜玻璃及其制备工艺
CN116669448B (zh) * 2023-07-28 2024-02-13 淄博金晶新能源有限公司 钙钛矿太阳能电池用tco导电膜玻璃及其制备工艺

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Application publication date: 20220819