CN114920468B - Borosilicate glass hydrophilic bonding method - Google Patents
Borosilicate glass hydrophilic bonding method Download PDFInfo
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- CN114920468B CN114920468B CN202210617935.9A CN202210617935A CN114920468B CN 114920468 B CN114920468 B CN 114920468B CN 202210617935 A CN202210617935 A CN 202210617935A CN 114920468 B CN114920468 B CN 114920468B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000005388 borosilicate glass Substances 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 80
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000008367 deionised water Substances 0.000 claims abstract description 24
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 24
- 238000004140 cleaning Methods 0.000 claims abstract description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000003213 activating effect Effects 0.000 claims abstract description 11
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 9
- 101100247596 Larrea tridentata RCA2 gene Proteins 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 238000003475 lamination Methods 0.000 claims abstract description 4
- 238000000678 plasma activation Methods 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims abstract description 3
- 238000000926 separation method Methods 0.000 claims abstract description 3
- 238000005406 washing Methods 0.000 claims abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 239000005304 optical glass Substances 0.000 abstract description 3
- 230000004913 activation Effects 0.000 abstract description 2
- 238000001994 activation Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009210 therapy by ultrasound Methods 0.000 description 3
- 229910008051 Si-OH Inorganic materials 0.000 description 2
- 229910006358 Si—OH Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000003020 moisturizing effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/006—Other surface treatment of glass not in the form of fibres or filaments by irradiation by plasma or corona discharge
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
The invention discloses a hydrophilic bonding method of borosilicate glass, which comprises the following steps: 1) Cleaning the substrate by deionized water, acetone, ethanol and RCA2 solution, and then dehydrating and drying the substrate by ethanol; 2) Plasma activating the substrate by adopting radio frequency plasma; 3) Performing hydrophilic treatment, namely dripping alkaline activation liquid on the surface to be bonded of the substrate subjected to plasma activation, bonding the two substrates, and preserving moisture for 20-24 hours in a high-humidity environment; 4) The second cleaning and the lamination are carried out, the substrate is placed in deionized water for separation, the deionized water is used for washing and ultrasonic cleaning, and then the substrate is laminated again in water; 5) And (3) baking at a high temperature, namely placing the substrate subjected to secondary lamination in a high-temperature vacuum environment for baking, and naturally cooling to room temperature after baking to finish bonding. The bonding process does not need pressurization, has little thermal influence on the substrate, has good bonding uniformity, has no bubble and cavity at the interface, is firmly bonded, and is suitable for bonding a semiconductor material and a traditional optical glass material.
Description
Technical Field
The invention relates to a borosilicate glass bonding method, in particular to a borosilicate glass hydrophilic bonding method, and belongs to the technical field of semiconductor manufacturing and glass bonding methods.
Background
Bonding technology is an emerging technology in the field of semiconductor manufacturing and optical manufacturing that physically or chemically connects the areas of two substrates that need to be brought into contact and ensures that the contact areas have sufficient mechanical strength and suitable electrical or optical properties.
According to their principle, the bonding techniques commonly used at present can be classified into 4 types: an interposer bonding technique using interposer connections; under the conditions of high temperature and pressurization, promoting the migration of particles in the substrate by means of an electric field, so that the particles form covalent bonds at the bonding interface; a thermal compression bonding technique for bonding by using high temperature and high pressure to promote the substrates to generate mutual diffusion of substances at bonding interfaces; and (3) hydrophilic bonding technology of chemically or physically forming hydrophilic groups on the surface of the substrate and then dehydrating and shrinking the hydrophilic groups to form covalent bonds under the conditions of high temperature and pressure.
With the continuous development of semiconductor, optical and other industries, the practical problems to be solved by the bonding technology are more complex, and the difficulties faced by the conventional bonding technology in the practical application process are also increasing gradually: the bonding of the interposer can affect the optical characteristics of the bonded assembly due to the introduction of the interposer, and defects such as bubbles and voids are likely to occur at the interface. The thermocompression bonding temperature is close to the softening point temperature of the substrate, and is not suitable for bonding parts with temperature sensitivity or high requirements on structural dimension. Anodic bonding requires that the substrate be metal or semiconductor, and is difficult to apply to bonding of traditional optical glass materials. Meanwhile, the existing hot-press bonding, anodic bonding and hydrophilic bonding all need to pressurize the surface of the part, so that surface scratch is easy to occur, and the bonding applicability of the part coated on the non-bonding surface is not high.
Disclosure of Invention
The invention aims to solve the problems and provide a bonding method for borosilicate glass with hydrophilicity, which is a permanent bonding method, does not need to be pressurized in the bonding process, is not easy to damage a non-bonding surface of a substrate, and has the advantages of simple operation, low requirements on equipment and operation environment, high bonding power and the like.
In order to achieve the above purpose, the invention adopts the technical scheme that:
1. cleaning with deionized water, acetone, ethanol and HCl (H) according to volume ratio 2 O 2 :H 2 The substrate was rinsed with RCA2 solution in a ratio of o=1:1:6, after which the substrate was dehydrated with ethanol and dried.
2. And (3) activating plasma, and cleaning the substrate by adopting radio frequency plasma.
3. And (3) hydrophilic treatment, namely dripping alkaline activation liquid on the bonding surface of the substrates, bonding the two substrates, and preserving moisture for 20-24 hours in a high humidity environment. The alkaline activating solution is prepared according to H 2 O 2 :H 2 O=1:9 (volume ratio) ratio dilute H 2 O 2 Then NaOH is dissolved in H according to the concentration of 0.02-0.06g/ml 2 O 2 And preparing the alkaline activated liquid in the diluent.
4. And (3) secondary cleaning and attaching, namely placing the substrate subjected to hydrophilic treatment into deionized water for flushing and ultrasonic cleaning, and then attaching again in water.
5. And (3) baking at a high temperature, namely baking the substrate subjected to secondary lamination in a high-temperature vacuum environment, and naturally cooling to room temperature after baking to finish bonding.
The cleaning step is to firstly rinse the substrate in flowing deionized water for 3-5 min, then to sequentially put the substrate in acetone and ethanol for ultrasonic cleaning for 3-5 min, then to put the substrate in the RCA2 solution for ultrasonic cleaning for 3-5 min, finally to put the substrate in ethanol for ultrasonic cleaning for 3min, and to blow-dry the substrate by a nitrogen gun after being taken out.
The plasma activating step adopts radio frequency plasma to activate the substrate; the plasma forming gas may be one or more of argon, oxygen and nitrogen; the gas pressure during discharge is 15 Pa to 50Pa; the discharge power for forming plasma is 500-800W; the discharge time is 30 s-3 min.
And the hydrophilic treatment step is to make the bonding surface of one of the substrates to be bonded upward, drop alkaline activating solution on the bonding surface, then attach the other substrate to the first substrate with the bonding surface facing downward, and finally place the attached substrate in an environment with relative humidity of 70% -90%, and stand for 20-24 h at normal temperature.
And the secondary cleaning and attaching step is to directly place the two substrates which are subjected to hydrophilic treatment and kept attached in deionized water, separate the two substrates in the water, then wash the substrates in flowing deionized water for more than 5min, ultrasonically clean the substrates in the flowing deionized water for more than 5min, finish secondary cleaning, and finally attach the surfaces to be bonded of the two substrates in the deionized water again.
The high-temperature baking step is to place two substrates which are subjected to secondary cleaning and kept in fit in a vacuum oven, keep the vacuum degree of the oven at 100-200 mbar, then heat up to 60 ℃ at a heating rate of 1-5 ℃/min for more than 1h, heat up to 100 ℃ at a heating rate of 1-5 ℃/min for more than 2h, heat up to 180 ℃ at a heating rate of 1-5 ℃/min for 4h, naturally cool to room temperature, and take out the substrates after breaking the vacuum in the oven, thus finishing bonding.
The mechanism and the beneficial effects of the invention are as follows:
1. after the substrate is cleaned, the number of dangling bonds on the surface of the substrate is increased through plasma treatment, so that the surface activity is improved; the quantity of Si-OH on the surface is increased through the alkaline activating solution, so that the surface hydrophilicity is improved, and the bonding power is increased; finally, dehydrating and shrinking Si-OH by vacuum high-temperature fire baking, and bonding in a covalent bond mode;
2. the bonding process does not need pressurization, and the non-bonding surface of the substrate is not easy to damage. The bonding temperature is far lower than the softening point temperature of the substrate, the thermal damage to the substrate is small, the substrate structure is not easy to deform, and the dimension is high;
3. the method has the advantages of low requirements on operating environment and equipment, simple operation, low cost, good bonding uniformity, no bubbles or voids at the interface, firm bonding and suitability for bonding of semiconductor materials and traditional optical glass materials;
4. the bonding power can reach more than 95%.
Drawings
Fig. 1 is a process flow diagram of the present invention.
Fig. 2 is a graph of ultrasonic scan test results for bonded assemblies of example 1 of the present invention.
Detailed Description
The technical scheme of the present invention will be described in further detail with reference to specific examples, but the present invention is not limited to the technical scheme of the following examples.
Bonding borosilicate glass with reference to the operational flow of FIG. 1, the specific operation is as follows;
A. the glass substrate is firstly washed by deionized water for 5min, and then is respectively washed by acetone and ethanol for 5min.
B. According to HCl: H 2 O 2 :H 2 O=1:1:6 (volume ratio), and placing the borosilicate glass substrate after ethanol ultrasonic treatment into the RCA2 for ultrasonic treatment for 5min.
C. And (3) putting the substrate subjected to the RCA2 ultrasonic cleaning into ethanol, carrying out ultrasonic treatment for 3min, taking out, and drying by a nitrogen gun.
D. Placing the blow-dried substrate into a plasma cleaning machine for plasma activation, wherein argon and oxygen are used as process gases, and the gas pressure during discharge is 30Pa; the discharge power for forming plasma is 800W; the discharge time was 2min.
E. According to H 2 O 2 :H 2 O=1:9 (volume ratio) configuration dilution H 2 O 2 NaOH was then dissolved in H at a concentration of 0.04g/ml 2 O 2 And preparing the alkaline activated liquid in the diluent.
F. And (3) placing the surface to be bonded of one of the glass substrates to be bonded upwards, sucking alkaline activating liquid by using a syringe, then dripping the activating liquid onto the surface to be bonded, and then attaching the surface to be bonded of the other glass substrate downwards onto the first glass substrate.
G. And placing the bonded substrate in a constant temperature moisturizing box with the relative humidity of 70%, and standing for 24 hours at normal temperature.
H. The substrates were placed in deionized water for separation, after which the glass substrates were rinsed with deionized water for 5min and then ultrasonically rinsed with deionized water for 5min.
I. And bonding the surfaces to be bonded of the cleaned glass substrates together in deionized water.
J. The bonded glass substrate was removed from the deionized water and placed in a vacuum oven, and the vacuum in the oven was pulled to 200mbar.
H. And (3) preserving heat for 1h at a temperature rising value of 60 ℃ at a temperature rising rate of 5 ℃/min, preserving heat for 2h at a temperature rising value of 100 ℃ at a temperature rising rate of 5 ℃/min, preserving heat for 4h at a temperature rising value of 180 ℃ at a temperature rising rate of 5 ℃/min, naturally cooling to room temperature, and taking out the substrate after breaking vacuum in the oven to finish bonding.
The ultrasonic scanning detection image of the substrate bonded by adopting the embodiment is shown in fig. 2, the bonding uniformity is good, the interface has no bubbles or cavities, and the bonding is firm.
Claims (9)
1. A hydrophilic bonding method of borosilicate glass, comprising the steps of:
(1) Cleaning: deionized water, acetone, ethanol and HCl (H) according to the volume ratio 2 O 2 :H 2 Cleaning the substrate by using an RCA2 solution with the ratio of O=1:1:6, and then dehydrating the substrate by using ethanol and drying the substrate;
(2) Plasma activation: activating the substrate by adopting radio frequency plasma;
(3) Hydrophilic treatment: after the alkaline activated liquid is dripped on the surface to be bonded of the substrates, bonding the two substrates, and preserving moisture for a period of time in a high humidity environment; the alkaline activating solution is prepared by mixing the components according to the volume ratio H 2 O 2 :H 2 Dilution H at ratio o=1:9 2 O 2 Then NaOH is dissolved in H according to the concentration of 0.02-0.06g/ml 2 O 2 The diluted solution is prepared;
(4) And (3) secondary cleaning and laminating: placing the substrate subjected to hydrophilic treatment in deionized water for separation, washing with deionized water and ultrasonically cleaning, and then attaching again in water;
(5) And (3) high-temperature baking: and (3) baking the substrate subjected to secondary lamination in a high-temperature vacuum environment, and naturally cooling to room temperature after baking to finish bonding.
2. The hydrophilic bonding method according to claim 1, wherein:
in the step (1), the substrate is firstly washed in flowing deionized water for 3-5 min, then is sequentially placed in acetone and ethanol for ultrasonic cleaning for 3-5 min, then is placed in the RCA2 solution for ultrasonic cleaning for 3-5 min, and finally is placed in ethanol for ultrasonic cleaning for more than 3min, and is dried by a nitrogen gun after being taken out.
3. The hydrophilic bonding method according to claim 1, wherein:
in the step (2), the gas forming the plasma is one or more of argon, oxygen and nitrogen.
4. The hydrophilic bonding method according to claim 1, wherein:
in the step (2), the gas pressure during discharge in the plasma activation process is 15-50 Pa; the discharge power for forming plasma is 500-800W; the discharge time is 30 s-3 min.
5. The hydrophilic bonding method according to claim 1, wherein:
in the step (3), the bonding surface of one of the substrates to be bonded is upward, an alkaline activating solution is dripped on the bonding surface, then the other substrate is bonded on the first substrate with the bonding surface facing downwards, and finally the bonded substrate is placed in an environment with the relative humidity of 70% -90%, and is kept stand for 20-24 h at normal temperature.
6. The hydrophilic bonding method according to claim 1, wherein:
in the step (4), the two substrates which are subjected to hydrophilic treatment and kept in joint are directly placed in deionized water, the two substrates are separated in the water, then the substrates are washed in flowing deionized water for more than 5min, and then the substrates are ultrasonically washed in the deionized water for more than 5min, so that secondary washing is completed, and the surfaces to be bonded of the two substrates are jointed together again in the deionized water.
7. The hydrophilic bonding method according to any one of claims 1 to 6, wherein:
in the step (5), the two substrates which are subjected to secondary cleaning and kept in fit are placed in a vacuum oven, the vacuum degree of the oven is kept to be 100-200 mbar, and then the temperature is raised to 60 ℃ at a heating rate of 1-5 ℃/min, and the temperature is kept for more than 1 h.
8. The hydrophilic bonding method according to claim 7, wherein: then the temperature is raised to 100 ℃ at a heating rate of 1-5 ℃/min, and the temperature is kept for more than 2 hours.
9. The hydrophilic bonding method according to claim 8, wherein: and then heating to 180 ℃ at a heating rate of 1-5 ℃/min, preserving heat for more than 4 hours, naturally cooling to room temperature, taking out the substrate after breaking the vacuum in the oven, and finishing bonding.
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CN202210617935.9A CN114920468B (en) | 2022-06-01 | 2022-06-01 | Borosilicate glass hydrophilic bonding method |
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CN114920468B true CN114920468B (en) | 2023-12-05 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1648662A (en) * | 2005-02-06 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Low temperature binding method for glass microflow control chip |
WO2016209897A1 (en) * | 2015-06-26 | 2016-12-29 | Corning Incorporated | Methods and articles including a sheet and a carrier |
CN112897899A (en) * | 2021-01-21 | 2021-06-04 | 中国科学院电工研究所 | Glass assembly bonding method |
Family Cites Families (3)
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US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
US20030079503A1 (en) * | 2001-10-26 | 2003-05-01 | Cook Glen B. | Direct bonding of glass articles for drawing |
EP3367425A1 (en) * | 2017-02-28 | 2018-08-29 | IMEC vzw | A method for direct bonding of semiconductor substrates |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1648662A (en) * | 2005-02-06 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Low temperature binding method for glass microflow control chip |
WO2016209897A1 (en) * | 2015-06-26 | 2016-12-29 | Corning Incorporated | Methods and articles including a sheet and a carrier |
CN112897899A (en) * | 2021-01-21 | 2021-06-04 | 中国科学院电工研究所 | Glass assembly bonding method |
Non-Patent Citations (2)
Title |
---|
室温Si-玻璃直接键合技术研究;黄腾超, 沈亦兵, 侯西云, 娄迪, 白剑;光电子.激光(第05期);全文 * |
晶圆直接键合及室温键合技术研究进展;王晨曦;王特;许继开;王源;田艳红;;精密成形工程(第01期);全文 * |
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