CN108063096A - A kind of semiconductor power device submodule group and its production method and compression joint type IGBT module - Google Patents
A kind of semiconductor power device submodule group and its production method and compression joint type IGBT module Download PDFInfo
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- CN108063096A CN108063096A CN201711129294.8A CN201711129294A CN108063096A CN 108063096 A CN108063096 A CN 108063096A CN 201711129294 A CN201711129294 A CN 201711129294A CN 108063096 A CN108063096 A CN 108063096A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000007906 compression Methods 0.000 title claims abstract description 9
- 230000006835 compression Effects 0.000 title claims abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910017750 AgSn Inorganic materials 0.000 claims abstract description 29
- 238000005476 soldering Methods 0.000 claims abstract description 14
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims description 15
- 239000000523 sample Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 230000006641 stabilisation Effects 0.000 claims description 9
- 238000011105 stabilization Methods 0.000 claims description 9
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/27444—Manufacturing methods by blanket deposition of the material of the layer connector in gaseous form
- H01L2224/2745—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/325—Material
- H01L2224/32501—Material at the bonding interface
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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Abstract
A kind of semiconductor power device submodule group and its production method and compression joint type IGBT module, the production method of the semiconductor power device submodule group provided by the invention include the following steps：S1. AgSn film soldering paste is deposited on the silvered face of molybdenum sheet；S2. chip is mounted on the AgSn films solder surfaces by fixture, forms structure to be sintered.The production method of semiconductor power device submodule group provided by the invention, deposits AgSn first on molybdenum sheet, and AgSn has the very strong capacity of heat transmission, it can be ensured that the heat-transfer capability of entire submodule group.
Description
Technical field
The present invention relates to semiconductor power device technology fields, and in particular to a kind of semiconductor power device submodule group and its
Production method and compression joint type IGBT module.
Background technology
IGBT, by the fast development of more than 30 years, has become electric power as all-controlling power electronics device of new generation
The mainstream device of electronic field, and as voltage, current parameters improve rapidly, at present industrial circle, locomotive traction,
It promotes rapidly in the fields such as intelligent grid.
In the prior art, practitioner proposes a kind of full-pressure-welding IGBT module, i.e.,：In inside modules, multiple chips are set
Positioner, then put molybdenum sheet and chip into positioner successively, then crimp.Wherein, the grid of igbt chip passes through
Spring terminal is drawn out on PCB and is interconnected.After this structure, due to needing that each chip is individually positioned, press
It is difficult to ensure that consistent pressure error, be easy to cause wafer damage when connecing.
For this purpose, Chinese patent literature CN102881589B discloses a kind of production method of compression joint type IGBT module, including
Following steps：1. bottom molybdenum sheet is placed in a sintering pedestal, auxiliary clamp and multiple power semiconductor chips are positioned over
On the molybdenum sheet of bottom；2. power semiconductor chip is fixed on the molybdenum sheet of bottom by being sintered, then by auxiliary clamp and it is sintered pedestal
It takes down.But prepared IGBT module with this solution, the heat transfer efficiency between each submodule is relatively low, causes entirety
Heat dissipation performance it is poor, easily stability in use is impacted.
The content of the invention
Therefore, the technical problem to be solved in the present invention is to overcome compression joint type IGBT module heat transfer property of the prior art
The defects of poor.
For this purpose, the present invention provides a kind of production method of semiconductor power device submodule group, include the following steps：S1. exist
AgSn film soldering paste is deposited on the silvered face of molybdenum sheet；S2. chip is mounted on the AgSn films solder surfaces, shape by fixture
Into structure to be sintered.
In the step S1, using vacuum ion sputtering mode by the AgSn films solder paste deposits in the molybdenum sheet
On.
The thickness of the AgSn films soldering paste is 3 μm -30 μm.
The production method of the semiconductor power device submodule group, further includes step：S3. the structure to be sintered is put
It is sintered in vacuum sintering furnace.
In the step S3, include the following steps：
A. the first predetermined temperature is warming up to, first predetermined temperature is 160 DEG C -190 DEG C；
B. after temperature stabilization to the first predetermined temperature, formic acid is injected, keeps the temperature 10-12min；
C. continue to heat up, raise the temperature to the second predetermined temperature, second predetermined temperature is 250 °C -300 DEG C, is treated
10-15min is kept the temperature after temperature stabilization；
D. it is cooled to room temperature.
A kind of semiconductor power device submodule group, including：Molybdenum sheet；Chip, the one side opposite with the molybdenum sheet are equipped with the
One electrode is simultaneously equipped with AgSn film soldering paste, and the chip is equipped with second electrode different from the one side of the AgSn films soldering paste；Underlay
Piece fits with the second electrode；And Insulating frame, to accommodate the molybdenum sheet, the chip and the lower gasket.
The semiconductor power device submodule group, further includes：3rd electrode is arranged on the chip and is located at described the
The one side of two electrodes；Grid probe sets simultaneously one end and the 3rd contact electrode with the Chip Vertical.
The chip is equipped with turning, and the grid probe is embedded in the turning and perpendicular with the chip.
A kind of compression joint type IGBT module, including：The semiconductor power device submodule group；Pcb board is positioned close to institute
One end of lower gasket is stated, the pcb board is equipped with the gate terminal being connected with described grid probe one end；Collector is arranged on
Close to the one side of the molybdenum sheet of the semiconductor power device submodule group.
Technical solution of the present invention has the following advantages that：
1. a kind of production method of semiconductor power device submodule group provided by the invention, includes the following steps：S1. in molybdenum
AgSn film soldering paste is deposited on the silvered face of piece；S2. chip is mounted on the AgSn films solder surfaces by fixture, is formed
Structure to be sintered.
In the prior art, the heat transfer efficiency between IGBT modules is relatively low, causes whole heat dissipation performance poor, easily
Stability in use is impacted.
The production method of semiconductor power device submodule group provided by the invention, deposits AgSn, AgSn first on molybdenum sheet
With the very strong capacity of heat transmission, it can be ensured that the heat-transfer capability of entire submodule group.
2. a kind of production method of semiconductor power device submodule group provided by the invention in the step S1, uses
Vacuum ion sputtering mode is by the AgSn films solder paste deposits on the molybdenum sheet.
In the prior art, plated film is carried out to molybdenum sheet surface using conventional means, coating film thickness is difficult to accurately control, causes to plate
The flatness of film surface is relatively low, while the thickness of plated film is larger.And for semiconductor power device, to the flatness of device
Very high with thickness requirement, device is more smooth thinner, and the quality of the product finally obtained is better.
The vacuum ion sputtering that the present invention uses refers to lotus energy particle bombardment (surface of solids), makes (solid atom or molecule)
The phenomenon that being projected from surface.By vacuum ion sputtering technology, obtained coated surface is smooth, uniformly and thickness is smaller, can be with
Meet the quality requirement for product.
3. a kind of production method of semiconductor power device submodule group provided by the invention, further includes step：S3. by described in
Structure to be sintered, which is placed in vacuum sintering furnace, to be sintered.By sintering step, molybdenum sheet and chip are steadily linked together,
Be conducive to the stabilization of submodule group.Sintering, porosity is small, molybdenum sheet and chip entirety stress, improves the voltage endurance capability of chip entirety.
Description of the drawings
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution of the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in describing below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is the structure diagram of the semiconductor power device submodule group provided by the invention；
Reference sign：
1- molybdenum sheets；11- silvered faces；2- chips；3- lower gaskets；4- Insulating frames；5- grid probes.
Specific embodiment
Technical scheme is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's all other embodiments obtained without making creative work, belong to the scope of protection of the invention.
In the description of the present invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instructions such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Convenient for the description present invention and simplify description rather than instruction or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for description purpose, and it is not intended that instruction or hint relative importance.
In the description of the present invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or be integrally connected；It can
To be mechanical connection or be electrically connected；It can be directly connected, can also be indirectly connected by intermediary, Ke Yishi
Connection inside two elements.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
As long as in addition, technical characteristic involved in invention described below different embodiments non-structure each other
It can be combined with each other into conflict.
Embodiment 1
The present embodiment provides a kind of production methods of semiconductor power device submodule group, include the following steps：S1. in molybdenum sheet
AgSn film soldering paste is deposited on 1 silvered face 11, silvered face 11 is set close to the chip 2；S2. chip 2 is pasted by fixture
Mounted in the AgSn films solder surfaces, structure to be sintered is formed.
In the prior art, the heat transfer efficiency between IGBT modules is relatively low, causes whole heat dissipation performance poor, easily
Stability in use is impacted.
The production method of semiconductor power device submodule group provided in this embodiment, AgSn is deposited on molybdenum sheet 1 first,
AgSn has the very strong capacity of heat transmission, it can be ensured that the heat-transfer capability of entire submodule group.
In the present embodiment, in the step S1, using vacuum ion sputtering mode by the AgSn films solder paste deposits
On the molybdenum sheet 1.
In the prior art, plated film is carried out to 1 surface of molybdenum sheet using conventional means, coating film thickness is difficult to accurately control, cause
The flatness of coated surface is relatively low, while the thickness of plated film is larger.And for semiconductor power device, to the smooth of device
Degree and thickness requirement are very high, and device is more smooth thinner, and the quality of the product finally obtained is better.The present embodiment use vacuum from
The phenomenon that son sputtering refers to lotus energy particle bombardment (surface of solids), (solid atom or molecule) is made to be projected from surface.Pass through vacuum
Ion sputtering, obtained coated surface is smooth, uniformly and thickness is smaller, can meet the quality requirement for product.
Specifically, the thickness of the AgSn films soldering paste is 3 μm -30 μm.
In the present embodiment, the production method of the semiconductor power device submodule group further includes step：S3. by described in
Structure to be sintered, which is placed in vacuum sintering furnace, to be sintered.By sintering step, molybdenum sheet 1 and chip 2 are steadily connected to one
It rises, is conducive to the stabilization of submodule group.
Specifically, in the step S3, include the following steps：
A. the first predetermined temperature is warming up to, first predetermined temperature is 160 DEG C -190 DEG C；
B. after temperature stabilization to the first predetermined temperature, formic acid is injected, keeps the temperature 10-12min；
C. continue to heat up, raise the temperature to the second predetermined temperature, second predetermined temperature is 250 °C -300 DEG C, is treated
10-15min is kept the temperature after temperature stabilization；
D. it is cooled to room temperature.
Specifically, in step a and c, temperature range is in units of 1 DEG C.In step b and c, soaking time using 1min as
Unit.
For example, setting the first predetermined temperature as 180 DEG C, after temperature stabilization, formic acid is injected, keeps the temperature min, select second in advance
Constant temperature degree is 260 DEG C, and 12min is kept the temperature after heating, is then cooled to room temperature,
Embodiment 2
The present embodiment provides a kind of semiconductor power device submodule group, using the semiconductor power device described in embodiment 1
The production method of part submodule group, the semiconductor power device submodule group include：Molybdenum sheet 1；Chip 2 is opposite with the molybdenum sheet 1
One side be equipped with first electrode and equipped with AgSn film soldering paste, the chip 2 is equipped with different from the one side of the AgSn films soldering paste
Second electrode；Lower gasket 3 fits with the second electrode；And Insulating frame 4, to accommodate the molybdenum sheet 1, the core
Piece 2 and the lower gasket 3.
The semiconductor power device submodule group, further includes：3rd electrode is arranged on the chip 2 described in being located at
The one side of second electrode；Grid probe 5 is vertically arranged simultaneously one end and the 3rd contact electrode with the chip 2.The core
Piece 2 is equipped with turning, and the grid probe 5 is embedded in the turning and perpendicular with the chip 2.
To sum up, the chip in the present embodiment has the following advantages that compared to traditional technique after sintering process：
1. ultra-thin coating can be prepared using vacuum ion sputtering technology, be conducive to control the height after sub- module group assembling
Uniformity；
2. the sintering structure prepared using specific sintering process has fine and close articulamentum (porosity ＜ 2%), high shear
Intensity (＞ 27MPa) is conducive to improve the stability and service life of submodule group；And it can reduce and element size is added
Work required precision, so as to reduce cost；
3. chip and molybdenum sheet are sintered to an overall structure, relatively by the sintering structure prepared using specific sintering process
Pressure-resistant (mechanical pressure) ability of the chip during press fitting is improved for single-chip, reduces chip during press fitting
With the spoilage in test process；
4. the sintering structure prepared using specific sintering process, can reduce the thermal contact resistance (10%) between parts.
Embodiment 3
The present embodiment provides a kind of compression joint type IGBT module, including：Semiconductor power device submodule described in embodiment 2
Group；Pcb board, is positioned close to one end of the lower gasket 3, and the pcb board is equipped with what is be connected with described 5 one end of grid probe
Gate terminal；Collector is positioned close to the one side of the molybdenum sheet 1 of the semiconductor power device submodule group.
Specifically, the grid probe 5 contacts with each other with gate terminal, so that it is guaranteed that can carry out conductance therebetween
Logical, the other end of gate terminal is in contact with collector at this time, due to collector also can conduction, can be with by said structure
Electric signal is passed through semiconductor power device submodule group and collector by the time.
Obviously, the above embodiments are merely examples for clarifying the description, and is not intended to limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And the obvious variation thus extended out or
Among changing still in the protection domain of the invention.
Claims (9)
1. a kind of production method of semiconductor power device submodule group, which is characterized in that include the following steps：
S1. AgSn film soldering paste is deposited on the silvered face (11) of molybdenum sheet (1)；
S2. chip (2) is mounted on the AgSn films solder surfaces by fixture, forms structure to be sintered.
2. the production method of semiconductor power device submodule group according to claim 1, which is characterized in that in the step
In S1, using vacuum ion sputtering mode by the AgSn films solder paste deposits on the molybdenum sheet (1).
3. the production method of semiconductor power device submodule group according to claim 2, which is characterized in that the AgSn is thin
The thickness of film soldering paste is 3 μm -30 μm.
4. the production method of semiconductor power device submodule group according to claim 1, which is characterized in that further include step
Suddenly：S3. the structure to be sintered is placed in vacuum sintering furnace and be sintered.
5. the production method of semiconductor power device submodule group according to claim 4, which is characterized in that in the step
In S3, include the following steps：
A. the first predetermined temperature is warming up to, first predetermined temperature is 160 DEG C -190 DEG C；
B. after temperature stabilization to the first predetermined temperature, formic acid is injected, keeps the temperature 10-12min；
C. continue to heat up, raise the temperature to the second predetermined temperature, second predetermined temperature is 250 DEG C -300 DEG C, treats temperature
10-15min is kept the temperature after stabilization；
D. it is cooled to room temperature.
6. a kind of semiconductor power device submodule group, which is characterized in that using any producer legal systems of claim 1-5
It forms, including：
Molybdenum sheet (1)；
Chip (2), opposite one side is equipped with first electrode and equipped with AgSn film soldering paste, the chip (2) with the molybdenum sheet (1)
Second electrode is equipped with different from the one side of the AgSn films soldering paste；
Lower gasket (3), fits with the second electrode；
And
Insulating frame (4), to accommodate the molybdenum sheet (1), the chip (2) and the lower gasket (3).
7. semiconductor power device submodule group according to claim 6, which is characterized in that further include：
3rd electrode is arranged on the one side for being located at the second electrode on the chip (2)；
Grid probe (5) is vertically arranged simultaneously one end and the 3rd contact electrode with the chip (2).
8. semiconductor power device submodule group according to claim 7, which is characterized in that the chip (2) is equipped with and turns
Angle, the grid probe (5) are embedded in the turning and perpendicular with the chip (2).
9. a kind of compression joint type IGBT module, which is characterized in that including：
Any semiconductor power device submodule groups of claim 6-8；
Pcb board, is positioned close to one end of the lower gasket (3), and the pcb board is equipped with and described grid probe (5) one end phase
The gate terminal of connection；
Collector is positioned close to the one side of the molybdenum sheet (1) of the semiconductor power device submodule group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711129294.8A CN108063096A (en) | 2017-11-15 | 2017-11-15 | A kind of semiconductor power device submodule group and its production method and compression joint type IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711129294.8A CN108063096A (en) | 2017-11-15 | 2017-11-15 | A kind of semiconductor power device submodule group and its production method and compression joint type IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108063096A true CN108063096A (en) | 2018-05-22 |
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| CN201711129294.8A Pending CN108063096A (en) | 2017-11-15 | 2017-11-15 | A kind of semiconductor power device submodule group and its production method and compression joint type IGBT module |
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| CN111128900A (en) * | 2018-10-30 | 2020-05-08 | 株洲中车时代电气股份有限公司 | Packaging structure of IGBT chip subunit and manufacturing method thereof |
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Address after: 102209 18 Riverside Avenue, Changping District science and Technology City, Beijing Applicant after: Global energy Internet Institute, Inc. Applicant after: Electric Power Research Institute of State Grid Shandong Electric Power Company Applicant after: State Grid Corporation of China Address before: 102209 18 Riverside Avenue, Changping District science and Technology City, Beijing Applicant before: Global energy Internet Institute, Inc. Applicant before: Electric Power Research Institute of State Grid Shandong Electric Power Company Applicant before: State Grid Corporation |
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Application publication date: 20180522 |