CN114911299B - High-order function generating circuit and device for crystal oscillator temperature compensation - Google Patents
High-order function generating circuit and device for crystal oscillator temperature compensation Download PDFInfo
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- CN114911299B CN114911299B CN202210839321.5A CN202210839321A CN114911299B CN 114911299 B CN114911299 B CN 114911299B CN 202210839321 A CN202210839321 A CN 202210839321A CN 114911299 B CN114911299 B CN 114911299B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a high-order function generating circuit and a device for crystal oscillator temperature compensation, wherein the circuit comprises: the temperature monitoring module, the summing circuit and n multipliers which are connected in series, wherein n is an integer which is greater than or equal to 2; the temperature monitoring module is used for monitoring the temperature of the environment and outputting a first-order curve signal according to the temperature; the first multiplier is used for multiplying the first-order curve signal by the first-order curve signal to obtain a second-order curve signal and outputting the second-order curve signal to the next multiplier and summing circuit which are connected in series; an nth multiplier, which is used for multiplying the nth order curve signal output by the (n-1) th multiplier and the first order curve signal and outputting an (n + 1) order curve signal; and the summation circuit is used for summing the first order curve signal to the (n + 1) order curve signal to obtain a temperature high order compensation curve signal of the crystal oscillator. The consistency of circuit design is ensured, and the signal regulation efficiency is improved while the circuit complexity is reduced.
Description
Technical Field
The invention relates to the technical field of crystal oscillator temperature compensation, in particular to a high-order function generating circuit and device for crystal oscillator temperature compensation.
Background
In a crystal oscillator, when the crystal has no temperature compensation, the oscillation frequency of the crystal changes with the temperature, and at present, the crystal is generally subjected to temperature compensation by a polynomial compensation method, a plurality of different circuits are needed to generate each order curve in the process, and the order curves have no correlation, if each order compensation curve is close to an ideal curve, each order curve needs to be adjusted independently, so that the circuit is complex, and the adjustment difficulty is high.
The above is only for the purpose of assisting understanding of the technical aspects of the present invention, and does not represent an admission that the above is prior art.
Disclosure of Invention
The invention mainly aims to provide a high-order function generating circuit and a high-order function generating device for crystal oscillator temperature compensation, and aims to solve the technical problems that the generating circuit in the prior art is complex in circuit structure and low in regulation efficiency.
In order to achieve the above object, the present invention provides a high order function generating circuit for crystal oscillator temperature compensation, including: the temperature monitoring module, the summing circuit and n multipliers are connected in series, wherein n is an integer greater than or equal to 2;
the output end of the temperature monitoring module is respectively connected with the first input end of a first multiplier and the second input ends of n multipliers, the output end of the temperature monitoring module is also connected with the first input end of the summing circuit, and the output end of each multiplier is connected with the first input end of the summing circuit;
the temperature monitoring module is used for monitoring the temperature of the environment and outputting a first-order curve signal according to the temperature;
the first multiplier is used for multiplying the first-order curve signal by the first-order curve signal to obtain a second-order curve signal and outputting the second-order curve signal to a next multiplier and the summation circuit which are connected in series;
an nth multiplier, which is used for multiplying the nth order curve signal output by the (n-1) th multiplier and the first order curve signal and outputting an (n + 1) order curve signal;
and the summation circuit is used for summing the first order curve signal to the (n + 1) order curve signal to obtain a temperature high order compensation curve signal of the crystal oscillator.
Optionally, the multiplier is an analog voltage multiplier and the summing circuit is a voltage summing circuit;
the temperature monitoring module comprises a temperature sensor and a level conversion unit, and the output end of the temperature sensor is connected with the first input end of the level conversion unit;
the temperature sensor is used for monitoring the temperature of the environment and outputting an initial first-order curve voltage signal according to the temperature;
the level conversion unit is used for converting the initial first-order curve voltage signal into a first-order curve voltage signal;
the first analog voltage multiplier is used for multiplying the first-order curve voltage signal by the first-order curve voltage signal to obtain a second-order curve voltage signal and outputting the second-order curve voltage signal to the next analog voltage multiplier and the voltage summing circuit which are connected in series;
an nth analog voltage multiplier, which is used for multiplying the nth order curve voltage signal output by the (n-1) th analog voltage multiplier and the first order curve voltage signal and outputting an (n + 1) order curve voltage signal;
and the voltage summing circuit is used for summing the first-order curve voltage signal to the (n + 1) -order curve voltage signal to obtain a temperature high-order compensation curve voltage signal of the crystal oscillator.
Optionally, the temperature sensor comprises: the circuit comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a first triode, a second triode, a first MOS (metal oxide semiconductor) tube, a second MOS tube and a first operational amplifier;
the source electrode of the first MOS tube is connected with a power supply, the source electrode of the second MOS tube is connected with the source electrode of the first MOS tube, the drain electrode of the first MOS tube is connected with the first end of the first resistor, the second end of the first resistor is connected with the emitter electrode of the first triode, the collector electrode of the first triode is grounded, the first end of the second resistor is connected with the first end of the first resistor, the second end of the second resistor is connected with the first end of the third resistor, the second end of the third resistor is connected with the emitter electrode of the second triode, the collector electrode of the second triode is grounded, the base electrode of the second triode is connected with the base electrode of the first triode, the base electrode of the second triode is grounded, the positive phase input end of the first operational amplifier is connected with the second end of the second resistor, the reverse phase input end of the first operational amplifier is connected with the emitter electrode of the first triode, the output end of the first operational amplifier is respectively connected with the grid electrode of the first MOS tube and the grid electrode of the second MOS tube, the first end of the fourth resistor is connected with the first-order signal output end of the fourth resistor, and the first-order output end of the second transistor is connected with the first resistor.
Optionally, the level converting unit includes: the fourth resistor is connected with the fifth resistor, the sixth resistor, the seventh resistor, the eighth resistor and the second operational amplifier;
the second end of the fifth resistor is connected with the first end of the second operational amplifier, the first end of the sixth resistor is connected with the second end of the fifth resistor, the second end of the sixth resistor is connected with the output end of the second operational amplifier, the first end of the seventh resistor is connected with the first end of the fourth resistor, the second end of the seventh resistor is connected with the non-inverting input end of the second operational amplifier, the first end of the eighth resistor is connected with the second end of the seventh resistor, and the second end of the eighth resistor is grounded.
Optionally, the analog voltage multiplier comprises: a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor and an eleventh MOS transistor;
the grid electrode of the third MOS tube and the grid electrode of the fourth MOS tube are respectively connected with a DC power supply, the source electrode of the third MOS tube is connected with the source electrode of the fourth MOS tube, the drain electrode of the third MOS tube is connected with the source electrode of the fifth MOS tube, the grid electrode of the fifth MOS tube is connected with the grid electrode of the eighth MOS tube, the drain electrode of the fifth MOS tube is connected with the drain electrode of the sixth MOS tube and the source electrode of the ninth MOS tube, the source electrode of the sixth MOS tube is connected with the drain electrode of the fourth MOS tube, the grid electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube, the source electrode of the seventh MOS tube is connected with the source electrode of the fifth MOS tube, the drain electrode of the seventh MOS tube is respectively connected with the drain electrode of the eighth MOS tube and the source electrode of the tenth MOS tube, the source electrode of the eighth MOS tube is connected with the drain electrode of the fourth MOS tube, the grid electrode of the eighth MOS tube is connected with the grid electrode of the fifth MOS tube, the drain electrode of the ninth MOS tube is connected with the source electrode of the eleventh MOS tube, and the drain electrode of the eleventh MOS tube are connected with the eleventh drain electrode of the eleventh MOS tube.
Optionally, the voltage summing circuit comprises: (n + 1) summing resistors, a ninth resistor, and a third operational amplifier;
the first end of the first summing resistor is connected with the output end of the third operational amplifier, the first ends of the rest n summing resistors are respectively connected with the output end of the corresponding analog voltage multiplier, the second ends of the (n + 1) summing resistors are connected with the inverting input end of the third operational amplifier, the first end of the ninth resistor is connected with the inverting input end of the third operational amplifier, the second end of the ninth resistor is connected with the output end of the third operational amplifier, and the output end of the third operational amplifier outputs a temperature high-order compensation curve voltage signal.
Optionally, the multiplier is an analog current multiplier and the summing circuit is a current summing circuit;
the temperature monitoring module is used for monitoring the temperature of the environment and outputting a first-order curve current signal according to the temperature;
the first analog current multiplier is used for multiplying the first-order curve current signal by the first-order curve current signal to obtain a second-order curve current signal and outputting the second-order curve current signal to the next analog current multiplier and the current summation circuit which are connected in series;
the nth analog current multiplier is used for multiplying the nth order curve current signal output by the (n-1) th analog current multiplier and the first order curve current signal to output an (n + 1) order curve current signal;
the current summation circuit is used for summing the first-order curve current signal to the (n + 1) -order curve current signal and converting the summed current signal into a temperature high-order compensation curve voltage signal.
Optionally, the analog current multiplier comprises: a twelfth MOS tube, a thirteenth MOS tube, a fourteenth MOS tube, a fifteenth MOS tube, a sixteenth MOS tube, a seventeenth MOS tube, an eighteenth MOS tube, a nineteenth MOS tube, a twentieth MOS tube, a twenty-first MOS tube, a twenty-second MOS tube and a twenty-thirteenth MOS tube;
the source electrode of the twelfth MOS tube and the source electrode of the thirteenth MOS tube are connected with a power supply, the grid electrode of the twelfth MOS tube is connected with the grid electrode of the thirteenth MOS tube, the grid electrode of the twelfth MOS tube is connected with the drain electrode of the twelfth MOS tube, the drain electrode of the twelfth MOS tube is connected with the source electrode of the fourteenth MOS tube, the drain electrode of the thirteenth MOS tube is connected with the source electrode of the fifteenth MOS tube, the grid electrode of the fourteenth MOS tube is connected with the grid electrode of the fifteenth MOS tube, the grid electrode of the fourteenth MOS tube is connected with the drain electrode of the fourteenth MOS tube, the drain electrode of the fourteenth MOS tube is connected with the drain electrode of the sixteenth MOS tube, the drain electrode of the fifteenth MOS tube is connected with the drain electrode of the nineteenth MOS tube, the source electrode of the sixteenth MOS transistor is connected with the source electrode of the twentieth MOS transistor, the gate electrode of the sixteenth MOS transistor is connected with the gate electrode of the seventeenth MOS transistor, the drain electrode of the seventeenth MOS tube is respectively connected with the power supply and the grid electrode of the seventeenth MOS tube, the source electrode of the seventeenth MOS tube is connected with the source electrode of the twenty first MOS tube, the drain electrode of the eighteenth MOS tube is respectively connected with the power supply and the grid electrode of the eighteenth MOS tube, the source electrode of the eighteenth MOS tube is connected with the source electrode of the twenty-second MOS tube, the grid electrode of the nineteenth MOS tube is connected with the grid electrode of the eighteenth MOS tube, the source electrode of the nineteenth MOS tube is connected with the source electrode of the twenty-third MOS tube, the drain electrode of the twentieth MOS tube and the grid electrode of the twentieth MOS tube are both grounded, the grid electrode of the twenty-first MOS tube and the drain electrode of the twenty-first MOS tube are both grounded, the grid electrode of the twenty second MOS tube and the drain electrode of the twenty second MOS tube are both grounded, the grid electrode of the twenty-third MOS tube and the drain electrode of the twenty-third MOS tube are both grounded.
Optionally, the current summing circuit comprises: (n + 1) current mirrors, a tenth resistor and a fourth operational amplifier;
the output end of the (n + 1) current mirrors is connected with the first end of the tenth resistor, the first end of the tenth resistor is connected with the inverting input end of the fourth operational amplifier, the second end of the tenth resistor is connected with the output end of the fourth operational amplifier, and the output end of the fourth operational amplifier outputs a temperature high-order compensation curve voltage signal.
In order to achieve the above object, the present invention further provides a high order function generating device for crystal oscillator temperature compensation, which includes the high order function generating circuit for crystal oscillator temperature compensation as described above.
The invention provides a high-order function generating circuit for crystal oscillator temperature compensation, which comprises: the temperature monitoring module, the summing circuit and n multipliers are connected in series, wherein n is an integer greater than or equal to 2; the output end of the temperature monitoring module is respectively connected with the first input end of a first multiplier and the second input ends of n multipliers, the output end of the temperature monitoring module is also connected with the first input end of the summing circuit, and the output end of each multiplier is connected with the first input end of the summing circuit; the temperature monitoring module is used for monitoring the temperature of the environment and outputting a first-order curve signal according to the temperature; the first multiplier is used for multiplying the first-order curve signal by the first-order curve signal to obtain a second-order curve signal and outputting the second-order curve signal to a next multiplier and the summation circuit which are connected in series; an nth multiplier, which is used for multiplying the nth order curve signal output by the (n-1) th multiplier and the first order curve signal and outputting an (n + 1) order curve signal; and the summation circuit is used for summing the first order curve signal to the (n + 1) order curve signal to obtain a temperature high order compensation curve signal of the crystal oscillator. The high-order function generating circuit for crystal oscillator temperature compensation generates (n + 1) order curve signals through n multipliers connected in series with each other on the basis of the first-order curve signals output by a temperature monitoring module, and finally sums the first-order curve signals to the (n + 1) order curve signals through a summing circuit to obtain the high-order temperature compensation curve signals of the crystal oscillator.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the embodiments or technical solutions of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a functional block diagram of a first embodiment of a high-order function generation circuit for crystal temperature compensation according to the present invention;
FIG. 2 is a functional block diagram of an embodiment of a high order function generation circuit for crystal temperature compensation according to the present invention;
FIG. 3 is a schematic circuit diagram of a temperature sensor in an embodiment of the high-order function generating circuit for crystal oscillator temperature compensation according to the present invention;
FIG. 4 is a schematic circuit diagram of another temperature sensor in an embodiment of a high-order function generating circuit for crystal temperature compensation according to the present invention;
FIG. 5 is a schematic circuit diagram of a level shift unit in an embodiment of a high-order function generation circuit for crystal temperature compensation according to the present invention;
FIG. 6 is a schematic diagram of an analog voltage multiplier in an embodiment of a high-order function generating circuit for crystal temperature compensation according to the present invention;
FIG. 7 is a schematic diagram of a voltage summing circuit according to an embodiment of the present invention;
FIG. 8 is a functional block diagram of a second embodiment of a high order function generating circuit for crystal temperature compensation according to the present invention;
FIG. 9 is a schematic diagram of an analog current multiplier in an embodiment of a high order function generation circuit for crystal temperature compensation according to the present invention;
FIG. 10 is a schematic circuit diagram of a current summing circuit according to an embodiment of the present invention.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name(s) |
| 10 | Temperature monitoring module | 21 | |
| 2n | |
30 | |
| 101 | |
102 | Level conversion unit |
| 2Y1 | First analog voltage multiplier | 2Yn | Nth |
| 301 | Voltage summing circuit | M1-M23 | First MOS transistor to twenty-third MOS transistor |
| R1-R10 | First to tenth resistors | H1-H4 | First to fourth operational amplifiers |
| VDD | Power supply | Q1-Q2 | First to second triodes |
| Rq1-Rq6 | First to sixth summing resistors | 2L1 | First analog current multiplier |
| 2Ln | Nth analog |
302 | Current summing circuit |
| Vbp | DC power supply |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that all directional indicators (such as up, down, left, right, front, back \8230;) in the embodiments of the present invention are only used to explain the relative positional relationship between the components, the motion situation, etc. in a specific posture (as shown in the attached drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a high-order function generating circuit for crystal oscillator temperature compensation.
Referring to fig. 1, in an embodiment of the present invention, the high-order function generating circuit for crystal oscillator temperature compensation includes: the temperature monitoring module 10, the summing circuit 30 and n multipliers which are connected in series, wherein n is an integer greater than or equal to 2;
the output end of the temperature monitoring module 10 is connected to the first input end of a first multiplier and the second input ends of n multipliers, the output end of the temperature monitoring module 10 is further connected to the first input end of the summing circuit 30, and the output end of each multiplier is connected to the first input end of the summing circuit 30;
the temperature monitoring module 10 is configured to monitor a temperature of an environment where the temperature monitoring module is located, and output a first-order curve signal according to the temperature.
It is understood that the temperature may be the temperature of the environment in which the crystal oscillator or chip is located; the temperature monitoring module outputs a first-order curve signal according to the monitored temperature.
The first multiplier 21 is configured to multiply the first order curve signal and the first order curve signal to obtain a second order curve signal, and output the second order curve signal to a next multiplier and the summing circuit connected in series.
It can be understood that, the first multiplier receives two first-order curve signals sent by the temperature monitoring module, multiplies the first-order curve signals by the first-order curve signals to obtain second-order curve signals, and outputs the second-order curve signals to the second multiplier connected in series, the second multiplier multiplies the second-order curve signals by the first-order curve signals transmitted by the temperature monitoring module to obtain third-order curve signals, and operations performed by the subsequent multipliers connected in series are similar to those performed by the second multiplier, and are not described herein again.
An nth multiplier 2n for multiplying the nth order curve signal output from the (n-1) th multiplier by the first order curve signal to output an (n + 1) order curve signal;
the summation circuit 30 is configured to sum the first order curve signal to the (n + 1) order curve signal to obtain a temperature high-order compensation curve signal of the crystal oscillator.
In this embodiment, the temperature monitoring module outputs a first-order curve signal, the first multiplier outputs a second-order curve signal, the second multiplier outputs a third-order curve signal, the nth multiplier outputs a (n + 1) -order curve signal, the summing circuit sums the first-order curve signal to the (n + 1) -th curve signal, and the obtained curve signal is the final temperature high-order compensation curve signal, that is, the temperature high-order compensation curve signal includes the first-order curve signal to the (n + 1) -order curve signal, and the number of multipliers may be set according to a specific scenario, for example, if the required highest-order curve signal is 6-order, 5 multipliers are required, which is not limited herein.
Further, referring to fig. 2, in order to improve the signal processing efficiency, the multiplier is an analog voltage multiplier, and the summing circuit is a voltage summing circuit 301; the temperature monitoring module comprises a temperature sensor 101 and a level conversion unit 102, wherein the output end of the temperature sensor 101 is connected with the first input end of the level conversion unit 102; the temperature sensor 101 is used for monitoring the temperature of the environment and outputting an initial first-order curve voltage signal according to the temperature; the level converting unit 102 is configured to convert the initial first-order curve voltage signal into a first-order curve voltage signal; a first analog voltage multiplier 2Y1, configured to multiply the first-order curve voltage signal by the first-order curve voltage signal to obtain a second-order curve voltage signal, and output the second-order curve voltage signal to a next analog voltage multiplier and the voltage summing circuit connected in series; an nth analog voltage multiplier 2Yn for multiplying an nth order curve voltage signal output from the (n-1) th analog voltage multiplier by the first order curve voltage signal to output an (n + 1) th order curve voltage signal; the voltage summing circuit 301 is configured to sum the first-order curve voltage signal to the (n + 1) -order curve voltage signal to obtain a temperature high-order compensation curve voltage signal of the crystal oscillator.
It can be understood that, the initial first order curve voltage signal output by the temperature sensor according to the temperature has a constant term, which slows down the processing efficiency in the subsequent signal processing, and the level conversion unit removes the constant term from the initial first order curve voltage signal to obtain the first order curve voltage signal, and transmits the first order curve voltage signal to the first analog voltage multiplier.
It should be understood that the first analog voltage multiplier multiplies the first order curve voltage signal by the first order curve voltage signal to obtain a second order curve voltage signal, the nth analog voltage multiplier multiplies the nth order curve voltage signal output from the (n-1) th analog voltage multiplier by the first order curve voltage signal to obtain an (n + 1) th order curve voltage signal, and the voltage summing circuit sums the first order curve voltage signal to the (n + 1) th order curve voltage signal to obtain a temperature higher order compensation curve voltage signal including the respective order curve voltage signals.
Further, referring to fig. 3, in order to realize the temperature-to-voltage conversion, the temperature sensor includes: the circuit comprises a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first triode Q1, a second triode Q2, a first MOS (metal oxide semiconductor) transistor M1, a second MOS transistor M2 and a first operational amplifier H1;
the source electrode of the first MOS transistor M1 is connected with a power supply VDD, the source electrode of the second MOS transistor M2 is connected with the source electrode of the first MOS transistor M1, the drain electrode of the first MOS transistor M1 is connected with the first end of the first resistor R1, the second end of the first resistor R1 is connected with the emitter electrode of the first triode Q1, the collector electrode of the first triode Q1 is grounded, the first end of the second resistor R2 is connected with the first end of the first resistor R1, the second end of the second resistor R2 is connected with the first end of the third resistor R3, the second end of the third resistor R3 is connected with the emitter electrode of the second triode Q2, the collector electrode of the second triode Q2 is grounded, the base electrode of the second triode Q2 is connected with the base electrode of the first triode Q1, the base electrode of the second triode Q2 is grounded, the input end of the first operational amplifier H1 is connected with the second end of the second resistor R1, the inverting input end of the first operational amplifier H1 is connected with the base electrode of the first triode Q1, the drain electrode of the first resistor R2 is connected with the gate electrode of the fourth resistor R4, and the output end of the second transistor M4 is connected with the gate electrode of the output terminal of the second transistor, and the output terminal of the fourth transistor M2.
In this embodiment, the initial first-order curve voltage signal may be represented by Vtemp, and then Vtemp = (R4/R3) × K × T/Q × ln (n) = (R4/R3) × K × Tc/Q × ln (n) + (R3/R2) × K × 273/Q × ln (n), where K is boltzmann's constant, Q is an electron electric quantity, n = a (Q2)/a (Q1), a (Q2) is an emitter area of Q, a (Q1) is an emitter area of Q1, respectively, T is an absolute temperature, and Tc is a temperature in celsius.
It is understood that if the temperature sensor directly outputs the first-order curve voltage signal, IO may be connected in parallel to the fourth resistor R4, specifically referring to fig. 4, where Vtemp = (R4/R3) × Tc/q × ln (n) + (R4/R3) × K273/q × ln (n) -IO = R4, IO = 273K/q × ln (n)/R3, and the following formula Vtemp = (R4/R3) × Tc/q × ln (n) = (R4/R3) × Kc Tc may be obtained through operation, where Kc = K/q × ln (n).
Further, referring to fig. 5, in order to remove a constant term from the initial first-order curve voltage signal to improve the signal processing efficiency, the level converting unit 102 includes: a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8 and a second operational amplifier H2;
the second end of the fifth resistor R5 is connected to the first end of the second operational amplifier H2, the first end of the sixth resistor R6 is connected to the second end of the fifth resistor R5, the second end of the sixth resistor R6 is connected to the output end of the second operational amplifier H2, the first end of the seventh resistor R7 is connected to the first end of the fourth resistor R4, the second end of the seventh resistor R7 is connected to the non-inverting input end of the second operational amplifier H2, the first end of the eighth resistor R8 is connected to the second end of the seventh resistor R7, and the second end of the eighth resistor R8 is grounded.
It is understood that the voltage at the output of the operational amplifier, i.e., the first-order-curve voltage signal, may be represented by Vout, vout = (R6/R5) × (Vtemp-V0), where V0 is preset, and V0 is set to V0= (R3/R2) × K × 273/q × ln (n), i.e., the constant term in the initial first-order-curve voltage signal may be removed, i.e., vout = (R4/R3) = (K × Tc/q × ln (n) = (R4/R3) × Kc Tc, where Kc = K/q × ln (n), and the obtained first-order-curve voltage signal Vout is a one-time function of temperature.
Further, referring to fig. 6, in order to reduce circuit complexity, the analog voltage multiplier includes: a third MOS transistor M3, a fourth MOS transistor M4, a fifth MOS transistor M5, a sixth MOS transistor M6, a seventh MOS transistor M7, an eighth MOS transistor M8, a ninth MOS transistor M9, a tenth MOS transistor M10, and an eleventh MOS transistor M11;
the gate of the third MOS transistor M3 and the gate of the fourth MOS transistor M4 are respectively connected to a DC power Vbp, the source of the third MOS transistor M3 is connected to the source of the fourth MOS transistor M4, the drain of the third MOS transistor M3 is connected to the source of the fifth MOS transistor M5, the gate of the fifth MOS transistor M5 is connected to the gate of the eighth MOS transistor M8, the drain of the fifth MOS transistor M5 is connected to the drain of the sixth MOS transistor M6 and the source of the ninth MOS transistor M9, the source of the sixth MOS transistor M6 is connected to the drain of the fourth MOS transistor M4, the gate of the sixth MOS transistor M6 is connected to the gate of the seventh MOS transistor M7, the source of the seventh MOS transistor M7 is connected to the source of the fifth MOS transistor M5, the drain of the seventh MOS transistor M7 is connected to the drain of the eighth MOS transistor M8 and the source of the tenth MOS transistor M10, the drain of the eighth MOS transistor M8 is connected to the drain of the tenth MOS transistor M10, the drain of the eighth MOS transistor M8 is connected to the tenth MOS transistor M11, the drain of the eleventh MOS transistor M8 is connected to the tenth drain of the eleventh MOS transistor M11, the tenth drain of the eleventh MOS transistor M8, and the tenth drain of the eleventh MOS transistor M11.
It is understood that the analog voltage multiplier multiplies the input curve voltage signal and outputs the multiplied signal, where the output signal may be represented as V = k × Vx Vy, where k is a gain constant and is related to circuit parameters of the analog voltage multiplier.
Further, in order to improve the mediation efficiency while reducing the circuit complexity, the voltage summing circuit 301 includes: (n + 1) summing resistors, a ninth resistor R9, and a third operational amplifier H3;
the first end of a first summing resistor Rq1 is connected with the output end of the third operational amplifier H3, the first ends of the rest n summing resistors are respectively connected with the output end of the corresponding analog voltage multiplier, the second ends of the (n + 1) summing resistors are connected with the inverting input end of the third operational amplifier H3, the first end of a ninth resistor R9 is connected with the inverting input end of the third operational amplifier H3, the second end of the ninth resistor R9 is connected with the output end of the third operational amplifier H3, and the output end of the third operational amplifier H3 outputs a temperature high-order compensation curve voltage signal.
In this embodiment, referring to fig. 7, if the highest-order curve voltage signal is a 6-order curve voltage signal, there are 6 summing resistors, which are Rq1, rq2, rq3, rq4, rq5, and Rq6, respectively, and if the first-order curve voltage signal output by the level conversion unit is V1, the second-order curve voltage signal output by the first analog voltage multiplier is V2, the third-order curve voltage signal output by the second analog voltage multiplier is V3, the fourth-order curve voltage signal output by the third analog voltage multiplier is V4, the fifth-order curve voltage signal output by the fourth analog voltage multiplier is V5, and the sixth-order curve voltage signal output by the fifth analog voltage multiplier is V6, then the signal output by the voltage summing circuit can be represented as:
vout = Vref (1 + R9/R2+ R9/R3+ R9/R4+ R9/R5+ R9/R6) - (V1 + R9/R1+ V2 + R9/R2+ V3 + R9/R3+ V4 + R9/R4+ V5 + R9/R5+ V6R 9/R6), where Vref is the reference voltage; the representation of the signal varies with the order of the voltage signal, and the description of the embodiment is omitted here.
The present embodiment provides a high order function generating circuit for crystal oscillator temperature compensation, including: the temperature monitoring module, the summing circuit and n multipliers are connected in series, wherein n is an integer greater than or equal to 2; the output end of the temperature monitoring module is respectively connected with the first input end of a first multiplier and the second input ends of n multipliers, the output end of the temperature monitoring module is also connected with the first input end of the summing circuit, and the output end of each multiplier is connected with the first input end of the summing circuit; the temperature monitoring module is used for monitoring the temperature of the environment and outputting a first-order curve signal according to the temperature; the first multiplier is used for multiplying the first-order curve signal by the first-order curve signal to obtain a second-order curve signal and outputting the second-order curve signal to a next multiplier and the summation circuit which are connected in series; an nth multiplier, which is used for multiplying the nth order curve signal output by the (n-1) th multiplier and the first order curve signal and outputting an (n + 1) order curve signal; and the summation circuit is used for summing the first order curve signal to the (n + 1) order curve signal to obtain a temperature high order compensation curve signal of the crystal oscillator. The high-order function generating circuit for crystal oscillator temperature compensation provided by the embodiment generates (n + 1) order curve signals through n multipliers connected in series with each other on the basis of the first order curve signals output by the temperature monitoring module, and finally sums the first order curve signals to the (n + 1) order curve signals through the summing circuit to obtain the temperature high-order compensation curve signals of the crystal oscillator.
Based on the above embodiments, a second embodiment of a higher order function generation circuit for crystal oscillator temperature compensation is proposed, and referring to fig. 8, in this embodiment, the multiplier is an analog current multiplier, and the summation circuit is a current summation circuit 302;
the temperature monitoring module 10 is configured to monitor a temperature of an environment where the temperature monitoring module is located, and output a first-order curve current signal according to the temperature;
the first analog current multiplier 2L1 is used for multiplying the first-order curve current signal by the first-order curve current signal to obtain a second-order curve current signal and outputting the second-order curve current signal to a next analog current multiplier and the current summation circuit which are connected in series;
an nth analog current multiplier 2Ln for multiplying an nth order curve current signal output from the (n-1) th analog current multiplier by the first order curve current signal to output an (n + 1) th order curve current signal;
the current summing circuit 302 is configured to sum the first-order curve current signal to the (n + 1) -order curve current signal, and convert the summed current signal into a temperature higher-order compensation curve voltage signal.
In this embodiment, the temperature monitoring module includes a temperature sensor, and the temperature sensor in this embodiment lacks a fourth resistor compared to the temperature sensor in the first embodiment, and the temperature sensor outputs a first-order curve current signal.
It should be understood that the first analog current multiplier multiplies the first order curve current signal by the first order curve current signal to obtain a second order curve current signal, the nth analog current multiplier multiplies the nth order curve current signal output by the (n-1) th analog current multiplier by the first order curve current signal to obtain an (n + 1) th order curve current signal, the current summing circuit sums the first order curve current signal to the (n + 1) th order curve current signal and converts the summed current signal into a voltage signal to be output, namely, finally, a temperature higher order compensation curve voltage signal is output.
Further, referring to fig. 9, in order to improve regulation efficiency while reducing circuit complexity, the analog current multiplier includes: a twelfth MOS transistor M12, a thirteenth MOS transistor M13, a fourteenth MOS transistor M14, a fifteenth MOS transistor M15, a sixteenth MOS transistor M16, a seventeenth MOS transistor M17, an eighteenth MOS transistor M18, a nineteenth MOS transistor M19, a twentieth MOS transistor M20, a twenty-first MOS transistor M21, a twelfth MOS transistor M22 and a thirteenth MOS transistor M23;
a source of the twelfth MOS transistor M12 and a source of the thirteenth MOS transistor M13 are connected to a power supply, a gate of the twelfth MOS transistor M12 is connected to a gate of the thirteenth MOS transistor M13, a gate of the twelfth MOS transistor M12 is connected to a drain of the twelfth MOS transistor M12, a drain of the twelfth MOS transistor M12 is connected to a source of the fourteenth MOS transistor M14, a drain of the thirteenth MOS transistor M13 is connected to a source of the fifteenth MOS transistor M15, a gate of the fourteenth MOS transistor M14 is connected to a gate of the fifteenth MOS transistor M15, a gate of the fourteenth MOS transistor M14 is connected to a drain of the fourteenth MOS transistor M14, a drain of the fourteenth MOS transistor M14 is connected to a drain of the sixteenth MOS transistor M16, a drain of the fifteenth MOS transistor M15 is connected to a drain of the nineteenth MOS transistor M19, a source of the sixteenth MOS transistor M16 is connected to a source of the twentieth MOS transistor M20, the gate of the sixteenth MOS transistor M16 is connected to the gate of the seventeenth MOS transistor M17, the drain of the seventeenth MOS transistor M17 is connected to the power supply and the gate of the seventeenth MOS transistor M17, the source of the seventeenth MOS transistor M17 is connected to the source of the twenty-first MOS transistor M21, the drain of the eighteenth MOS transistor M18 is connected to the power supply and the gate of the eighteenth MOS transistor M18, the source of the eighteenth MOS transistor M18 is connected to the source of the twenty-second MOS transistor M22, the gate of the nineteenth MOS transistor M19 is connected to the gate of the eighteenth MOS transistor M18, the source of the nineteenth MOS transistor M19 is connected to the source of the twenty-third MOS transistor M23, the drain of the twentieth MOS transistor M20 and the gate of the twenty-second MOS transistor M20 are both grounded, and the gate of the twenty-first MOS transistor M21 and the drain of the twenty-first MOS transistor M21 are both grounded, the grid electrode of the twenty-second MOS transistor M22 and the drain electrode of the twenty-second MOS transistor M22 are both grounded, and the grid electrode of the twenty-third MOS transistor M23 and the drain electrode of the twenty-third MOS transistor M23 are both grounded.
In the present embodiment, the current signal output by each analog current multiplier may be represented as Iout = Ix by Iy/IR.
Further, referring to fig. 10, in order to improve regulation efficiency while reducing circuit complexity, the current summing circuit includes: (n + 1) current mirrors, a tenth resistor R10, and a fourth operational amplifier H4;
the output end of the (n + 1) current mirrors is connected with the first end of the tenth resistor, the first end of the tenth resistor is connected with the inverting input end of the fourth operational amplifier, the second end of the tenth resistor is connected with the output end of the fourth operational amplifier, and the output end of the fourth operational amplifier outputs a temperature high-order compensation curve voltage signal.
In this embodiment, for example, the signal that needs to be output at the highest order is a 6-order signal, 6 current mirrors are needed, the first current mirror multiplies the first-order curve current signal I1 output by the temperature monitoring module by K1 and then transmits the multiplied signal to the inverting input terminal of the fourth operational amplifier H4, the remaining current mirrors multiply the curve current signal output by the corresponding analog current multiplier by a corresponding coefficient and transmit the multiplied signal to the inverting input terminal of the fourth operational amplifier H4, the non-inverting input terminal of the fourth operational amplifier is a reference voltage, the output of the fourth operational amplifier outputs a final temperature higher-order compensation curve voltage signal Vout, vout = Vref-Iout R10, where Iout is the sum of currents transmitted to the operational amplifiers by the current mirrors.
In the high-order function generation circuit for crystal oscillator temperature compensation provided by the embodiment, the multiplier is an analog current multiplier, and the summation circuit is a current summation circuit; the temperature monitoring module is used for monitoring the temperature of the environment and outputting a first-order curve current signal according to the temperature; the first analog current multiplier is used for multiplying the first-order curve current signal by the first-order curve current signal to obtain a second-order curve current signal and outputting the second-order curve current signal to the next analog current multiplier and the current summation circuit which are connected in series; the nth analog current multiplier is used for multiplying the nth order curve current signal output by the (n-1) th analog current multiplier and the first order curve current signal to output an (n + 1) order curve current signal; the current summation circuit is used for summing the first-order curve current signal to the (n + 1) -order curve current signal and converting the summed current signal into a temperature high-order compensation curve voltage signal. According to the embodiment, when the voltage monitoring module outputs the first-order curve current signal, the first-order curve current signal is converted into the temperature high-order compensation curve voltage signal through the analog current multiplier and the current summing circuit to be output, and the adjusting efficiency is improved while the circuit complexity is reduced.
In order to achieve the above object, the present invention further provides a high-order function generating device for crystal oscillator temperature compensation, which includes the high-order function generating circuit for crystal oscillator temperature compensation as described above. The specific structure of the high-order function generation circuit for crystal oscillator temperature compensation refers to the above embodiments, and since the present device adopts all the technical solutions of all the above embodiments, at least all the beneficial effects brought by the technical solutions of the above embodiments are achieved, and no further description is given here.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (2)
1. An higher-order function generation circuit for crystal oscillator temperature compensation, the higher-order function generation circuit for crystal oscillator temperature compensation comprising: the temperature monitoring module, the summing circuit and n multipliers which are connected in series, wherein n is an integer which is greater than or equal to 2;
the output end of the temperature monitoring module is respectively connected with the first input end of a first multiplier and the second input ends of n multipliers, the output end of the temperature monitoring module is also connected with the first input end of the summing circuit, and the output end of each multiplier is connected with the first input end of the summing circuit;
the temperature monitoring module is used for monitoring the temperature of the environment and outputting a first-order curve signal according to the temperature;
the first multiplier is used for multiplying the first-order curve signal by the first-order curve signal to obtain a second-order curve signal and outputting the second-order curve signal to a next multiplier and the summation circuit which are connected in series;
an nth multiplier, which is used for multiplying the nth order curve signal output by the (n-1) th multiplier and the first order curve signal and outputting an (n + 1) order curve signal;
the summation circuit is used for summing the first order curve signal to the (n + 1) order curve signal to obtain a temperature high order compensation curve signal of the crystal oscillator;
the multiplier is an analog current multiplier, and the summing circuit is a current summing circuit;
the temperature monitoring module is used for monitoring the temperature of the environment and outputting a first-order curve current signal according to the temperature;
the first analog current multiplier is used for multiplying the first-order curve current signal by the first-order curve current signal to obtain a second-order curve current signal and outputting the second-order curve current signal to the next analog current multiplier and the current summation circuit which are connected in series;
the nth analog current multiplier is used for multiplying the nth order curve current signal output by the (n-1) th analog current multiplier and the first order curve current signal to output an (n + 1) order curve current signal;
the current summation circuit is used for summing the first-order curve current signal to the (n + 1) -order curve current signal and converting the summed current signal into a temperature high-order compensation curve voltage signal;
the analog current multiplier includes: a twelfth MOS tube, a thirteenth MOS tube, a fourteenth MOS tube, a fifteenth MOS tube, a sixteenth MOS tube, a seventeenth MOS tube, an eighteenth MOS tube, a nineteenth MOS tube, a twentieth MOS tube, a twenty-first MOS tube, a twenty-second MOS tube and a twenty-thirteenth MOS tube;
the source electrode of the twelfth MOS tube and the source electrode of the thirteenth MOS tube are connected with a power supply, the grid electrode of the twelfth MOS tube is connected with the grid electrode of the thirteenth MOS tube, the grid electrode of the twelfth MOS tube is connected with the drain electrode of the twelfth MOS tube, the drain electrode of the twelfth MOS tube is connected with the source electrode of the fourteenth MOS tube, the drain electrode of the thirteenth MOS tube is connected with the source electrode of the fifteenth MOS tube, the grid electrode of the fourteenth MOS tube is connected with the grid electrode of the fifteenth MOS tube, the grid electrode of the fourteenth MOS tube is connected with the drain electrode of the fourteenth MOS tube, the drain electrode of the fourteenth MOS tube is connected with the drain electrode of the sixteenth MOS tube, the drain electrode of the fifteenth MOS tube is connected with the drain electrode of the nineteenth MOS tube, the source electrode of the sixteenth MOS transistor is connected with the source electrode of the twentieth MOS transistor, the gate electrode of the sixteenth MOS transistor is connected with the gate electrode of the seventeenth MOS transistor, the drain electrode of the seventeenth MOS tube is respectively connected with the power supply and the grid electrode of the seventeenth MOS tube, the source electrode of the seventeenth MOS tube is connected with the source electrode of the twenty first MOS tube, the drain electrode of the eighteenth MOS tube is respectively connected with the power supply and the grid electrode of the eighteenth MOS tube, the source electrode of the eighteenth MOS tube is connected with the source electrode of the twenty-second MOS tube, the grid electrode of the nineteenth MOS tube is connected with the grid electrode of the eighteenth MOS tube, the source electrode of the nineteenth MOS tube is connected with the source electrode of the twenty-third MOS tube, the drain electrode of the twentieth MOS tube and the grid electrode of the twentieth MOS tube are both grounded, the grid electrode of the twenty-first MOS tube and the drain electrode of the twenty-first MOS tube are both grounded, the grid electrode of the twenty-second MOS tube and the drain electrode of the twenty-second MOS tube are both grounded, the grid electrode of the twenty-third MOS transistor and the drain electrode of the twenty-third MOS transistor are both grounded;
the current summing circuit includes: (n + 1) current mirrors, a tenth resistor and a fourth operational amplifier;
the output end of the (n + 1) current mirrors is connected with the first end of the tenth resistor, the first end of the tenth resistor is connected with the inverting input end of the fourth operational amplifier, the second end of the tenth resistor is connected with the output end of the fourth operational amplifier, and the output end of the fourth operational amplifier outputs a temperature high-order compensation curve voltage signal.
2. An apparatus for generating a higher-order function for crystal oscillator temperature compensation, the apparatus comprising the higher-order function generating circuit for crystal oscillator temperature compensation according to claim 1.
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