CN114908320A - Etching-free semiconductor laser heat sink structure and preparation method and application thereof - Google Patents

Etching-free semiconductor laser heat sink structure and preparation method and application thereof Download PDF

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Publication number
CN114908320A
CN114908320A CN202210389529.1A CN202210389529A CN114908320A CN 114908320 A CN114908320 A CN 114908320A CN 202210389529 A CN202210389529 A CN 202210389529A CN 114908320 A CN114908320 A CN 114908320A
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China
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layer
heat sink
semiconductor laser
sink structure
metal layer
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CN202210389529.1A
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Inventor
郝明明
高翔
王云才
周勇
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Guangdong University of Technology
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Guangdong University of Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Abstract

The invention belongs to the field of semiconductor lasers, and discloses an etching-free semiconductor laser heat sink structure, a preparation method and application thereof, wherein a magnetron sputtering method is adopted to prepare a metal layer on the stepped surface of a stepped aluminum nitride substrate; and then preparing a welding layer on the metal layer on the surface of the first step by adopting magnetron sputtering, wherein the area of the metal layer on the surface of the first step is larger than or equal to that of the welding layer, and the height of the vertical plane of the step is larger than the total thickness of the metal layer on the surface of the first step and the welding layer, so that the etching-free preparation of the heat sink structure is realized. The stepped aluminum nitride substrate is adopted, and the height of the vertical plane of the step of the substrate is larger than the total thickness of the metal layer and the welding layer on the surface of the first step, so that an insulating structure is formed, the risk of short circuit of a laser chip caused by incomplete etched metal does not exist, and the reliability of semiconductor laser packaging is obviously improved. And the subsequent operation process of etching the insulation groove is omitted, the process steps are simplified, and the cost is saved.

Description

Etching-free semiconductor laser heat sink structure and preparation method and application thereof
Technical Field
The invention belongs to the technical field of semiconductor lasers, and particularly relates to an etching-free semiconductor laser heat sink structure and a preparation method and application thereof.
Background
The semiconductor laser has the advantages of small volume, light weight, high conversion efficiency, long service life, easy modulation and the like, so that the semiconductor laser is widely applied to the fields of industry, medical treatment, communication, information display, military and the like at present. The high-power semiconductor laser technology is an important technical basis for developing the national defense industry, and the development of the high-power semiconductor laser technology can directly promote the updating and upgrading of technologies such as fuze, tracking, guidance, weapon simulation, ignition and detonation, radar, night vision, target identification and countermeasure and the like. The COS packaging is widely applied to semiconductor laser chip packaging, the traditional COS heat sink needs to etch an insulation groove after a metal layer is sputtered, the process is complex, time-consuming and labor-consuming, for example, patent CN106602401A, and if the metal layer is left, chip short circuit can be caused, and the reliability of the semiconductor laser is seriously affected.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a preparation method of an etching-free semiconductor laser heat sink structure.
The invention also aims to provide the semiconductor laser heat sink structure prepared by the method.
The invention further aims to provide application of the heat sink structure of the semiconductor laser.
The purpose of the invention is realized by the following technical scheme:
a preparation method of an etching-free semiconductor laser heat sink structure comprises the following specific steps:
s1, preparing a metal layer on a plane of a step-shaped aluminum nitride substrate with two polished sides by adopting a magnetron sputtering method; the step-shaped aluminum nitride substrate comprises a step plane and a step vertical plane, and the metal layer is arranged on the step surface; the step surface comprises a first step surface and a second step surface;
s2, preparing a welding layer on the surface of the metal layer by adopting a magnetron sputtering method, wherein the welding layer is arranged on the metal layer on the first step surface, the area of the metal layer on the first step surface is larger than or equal to that of the welding layer, and the height of the vertical plane of the step is larger than the total thickness of the metal layer and the welding layer on the first step surface, so that the etching-free preparation of the heat sink structure of the semiconductor laser is realized.
Preferably, the surface roughness of the stepped aluminum nitride substrate in step S1 is less than 0.5, the thermal conductivity is 200 to 250W/m · k, and the thickness is 0.3 to 0.4 mm.
Preferably, the metal layer on the surface of the stepped aluminum nitride substrate in step S1 is a Cu layer, a Ni layer, an Au layer, and a Pt layer in this order.
More preferably, the thickness of the Cu layer is 60-80 μm, the thickness of the Ni layer is 1-4 μm, the thickness of the Au layer is 0.5-1.2 μm, and the thickness of the Pt layer is 0.3-0.5 μm.
Preferably, the area of the Pt layer is greater than or equal to the area of the solder layer in step S2. This is because the Pt layer separates the Au layer and the solder layer, preventing the Au from directly contacting the solder layer, and the eutectic temperature of the solder is not sufficiently increased to melt, which affects the soldering quality of the chip.
Preferably, the soldering layer in step S2 is gold-tin alloy or indium.
More preferably, the gold and tin content of the gold-tin alloy is 80% and 20%. The gold-tin alloy of the proportion generates eutectic reaction when being heated to 280 ℃ to generate the gold-tin alloy, and the solder melts to combine the chip and the substrate.
A semiconductor laser heat sink structure is prepared by the method.
Furthermore, the heat sink structure is formed by sequentially manufacturing a metal layer and a welding layer on the plane of a step-shaped aluminum nitride substrate with polished double surfaces; the stepped aluminum nitride substrate comprises a stepped surface and a stepped vertical surface, and the metal layer is on the stepped surface; the ladder surface includes first ladder surface and second ladder surface, the welding layer is in on the metal level of first ladder surface, the area of the metal level of first ladder surface is greater than or equal to the area of welding layer, the height of ladder vertical plane is greater than the gross thickness of metal level and welding layer on the first ladder surface.
The heat sink structure of the semiconductor laser is applied to a high-power semiconductor laser.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention relates to a preparation method of an etching-free semiconductor laser heat sink structure, which comprises the steps of sputtering a metal layer on the surface of a step-shaped aluminum nitride substrate; then, a bonding layer for bonding the laser chip is prepared on the surface of the metal layer of the first step surface. The substrate can meet the requirements without etching after being coated with the metal layer, the substrate is connected with solder in an inverted packaging mode with the front face downward through vacuum reflow soldering, and the back face of the substrate is bonded with the metal layer on the surface of the second step through a gold wire lead bonding machine to be used as the cathode of the chip.
2. The area of the Pt layer is larger than that of the welding layer, so that the phenomenon that the eutectic temperature of the solder is increased and the packaging reliability is influenced due to the fact that the solder is contacted with the Au metal layer is avoided.
3. The invention adopts the aluminum nitride substrate with the step-shaped structure, which is different from the conventional COS packaging of the semiconductor laser, after the metal layer is prepared on the step-shaped aluminum nitride substrate by the magnetron sputtering method, the insulating structure is formed because the aluminum nitride material has good insulating property and the height of the step vertical plane of the aluminum nitride substrate is larger than the total thickness of the metal layer and the welding layer on the surface of the first step, and the structure has no risk of short circuit of a laser chip caused by incomplete etching metal, thereby obviously improving the reliability of the packaging of the semiconductor laser.
4. Because aluminum nitride is not conductive, the metal layer on the flat aluminum nitride substrate is conductive, and the anode and the cathode need to be separated by arranging an insulating groove on the flat aluminum nitride substrate, and if the anode and the cathode are not separated by the insulating groove, short circuit can occur. The aluminum nitride substrate is of a step-shaped structure and is divided into a high plane and a low plane, and the vertical plane part of the step is exposed aluminum nitride non-conducting, so that an insulating structure is formed. Therefore, the anode and the cathode are separated without etching the insulation groove, the subsequent operation process of etching the insulation groove is omitted, and the process steps are simplified.
Drawings
Fig. 1 is a schematic diagram of a heat sink structure of an etching-free semiconductor laser according to the present invention.
Fig. 2 is a schematic structural view of the stepped aluminum nitride substrate of the present invention.
Fig. 3 is a flow chart of a method for fabricating a heat sink structure for a semiconductor laser according to the present invention.
Detailed Description
The following examples are presented to further illustrate the present invention and should not be construed as limiting the invention. Unless otherwise specified, the technical means used in the examples are conventional means well known to those skilled in the art. Reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
Example 1
Fig. 1 is a schematic diagram of a heat sink structure of an etching-free semiconductor laser in the invention. Wherein, 1 is the ladder type aluminium nitride substrate, 2 is the metal level, and 3 is the welding layer. As shown in fig. 1, a heat sink structure for a high-power semiconductor laser without etching an insulation trench includes a stepped aluminum nitride substrate 1, a metal layer 2, and a welding layer 3. The heat sink structure is characterized in that a metal layer 2 and a welding layer 3 are sequentially manufactured on the plane of a step-shaped aluminum nitride substrate 1 with two polished surfaces; the step-shaped aluminum nitride substrate 1 comprises a step surface and a step vertical surface 6, and the metal layer 2 is arranged on the step surface; the step surface comprises a first step surface 4 and a second step surface 5, the welding layer 3 is arranged on the metal layer of the first step surface 4, the area of the metal layer of the first step surface 4 is larger than that of the welding layer 3, and the height of the step vertical surface 6 is larger than the total thickness of the metal layer on the first step surface 4 and the welding layer 3 for welding the laser chip.
Fig. 2 is a schematic structural view of the stepped aluminum nitride substrate of the present invention. Wherein, notch cuttype aluminium nitride substrate 1 includes ladder plane and ladder vertical plane 6, and the ladder surface includes first ladder surface 4 and second ladder surface 5. The height of the step vertical plane 6 is larger than the total thickness of the metal layer and the welding layer 3 on the first step surface 4; the thermal conductivity of the aluminum nitride is 200 to 250W/m.K. This particular structure forms a good insulating tape, since the aluminum nitride material has good insulating properties. Polishing the upper surface and the lower surface of the step-shaped aluminum nitride substrate 1 on a grinding and polishing machine to enable the roughness of the surface to be less than 0.5, and then cleaning by ultrasonic. The chip is placed in a magnetron sputtering device, a metal layer 2 is sputtered on the surface of a stepped aluminum nitride substrate 1, then a welding layer 3 with a preset pattern and an area is arranged according to requirements, a chip of a high-power semiconductor laser is welded on the surface of the welding layer 3 by adopting flip-chip welding, the front side of the laser chip faces downwards and is connected with a welding flux by using a chip mounter, a gold thread is arched and is connected into a second stepped surface 5 from a first stepped surface 4 of the stepped aluminum nitride substrate 1, namely, one end of the gold thread is bonded on the chip, the other end of the gold thread strides over a stepped vertical surface 6 of the stepped aluminum nitride substrate and is bonded on the second stepped surface 5 of the stepped aluminum nitride substrate, and the back side of the gold thread is connected with the metal layer on the first stepped surface 4 through a gold thread bonding machine to form the positive and negative poles of the chip. Because notch cuttype aluminium nitride substrate 1 has good insulating properties, notch cuttype aluminium nitride substrate includes ladder plane and ladder vertical plane, ladder vertical plane 6 highly be greater than metal layer and welded layer 3's gross thickness on first step surface 4. The structure has good insulating property, the risk of short circuit of a laser chip caused by incomplete etching metal does not exist, and the packaging reliability of the semiconductor laser is obviously improved. And the subsequent operation process of etching the insulation groove is omitted, the process steps are simplified, and the cost is saved.
Example 2
A preparation method of an etching-free semiconductor laser heat sink structure is disclosed, as shown in FIG. 3, and comprises the following steps:
1. preparing a metal layer on the plane of the step-shaped aluminum nitride substrate with two polished surfaces by adopting a magnetron sputtering method; the step-shaped aluminum nitride substrate comprises a step plane and a step vertical plane, and the metal layer is arranged on the step surface; the step surface comprises a first step surface and a second step surface;
2. and then preparing a welding layer on the surface of the metal layer by adopting a magnetron sputtering method, wherein the welding layer is arranged on the metal layer on the surface of the first step, the area of the metal layer on the surface of the first step is larger than or equal to that of the welding layer, and the height of the vertical plane of the step is larger than the total thickness of the metal layer and the welding layer on the surface of the first step, so that the etching-free preparation of the heat sink structure of the semiconductor laser is realized.
Steps 1 and 2 Using a magnetron sputtering apparatus (Korea ECOPIA SE-400) the instructions were to turn on the water cooler, turn on Ar gas at a pressure of 1.5bar, turn on N 2 Breaking vacuum, placing a sample, opening an RV valve when CG-F shows that the vacuum degree reaches about 4E-2, closing the RV valve and opening an FV valve when CG-M shows that the vacuum degree reaches below 9E-3. Opening the molecular pump to accelerate, opening the RV valve to vacuumize again to 10 after the molecular pump accelerates -6 Magnitude. And introducing Ar gas, wherein the gas flow value is 30-50 sccm, the rotating speed of the sample is set to 10rpm, opening a target gun switch, removing the baffle to start coating after sputtering is stable, and closing the equipment after evaporation.
Polishing and grinding the stepped aluminum nitride substrate 1 according to requirements to prepare the aluminum nitride substrate 1 with corresponding surface roughness, wherein the surface roughness of the stepped aluminum nitride substrate 1 is not more than 0.5, the thermal conductivity is 200-250W/m.k, and the thickness is 0.3-0.4 mm. The thickness range includes but is not limited to the above range, and can be set according to actual conditions and settings, and is within the protection range.
In order to better protect the stepped aluminum nitride substrate 1, a Cu layer, a Ni layer, an Au layer, and a Pt layer are sequentially sputtered on the surface of the stepped aluminum nitride substrate 1. The thickness of the Cu layer is 60-80 mu m, the thickness of the Ni layer is 1-4 mu m, the thickness of the Au layer is 0.5-1.2 mu m, and the thickness of the Pt layer is 0.3-0.5 mu m. It should be noted that the metal layer 2 includes, but is not limited to, the Cu layer, the Ni layer, the Au layer, and the Pt layer, and the selection of the metal layer 2 is within the protection range according to the requirement. The welding layer 3 is AuSn or indium. Wherein, the ratio of gold and tin in the gold-tin alloy is 80% and 20%. The gold-tin alloy of the proportion generates eutectic reaction when being heated to 280 ℃ to generate gold-tin alloy, and AuSn welding flux is melted to combine the chip and the substrate. The selection of the welding layer 3 is within the protection range according to the requirement. In order to ensure good welding between the laser chip and the heat sink, the area of the welding layer should be larger than or equal to that of the laser chip.
Example 3
A preparation method of an etching-free heat sink structure for a high-power semiconductor laser comprises the following steps:
1. preparing a stepped aluminum nitride substrate 1 by using an aluminum nitride material, polishing the upper plane and the lower plane of the stepped aluminum nitride heat sink 1 on a grinding and polishing machine to enable the surface roughness to be less than 0.5, and then ultrasonically cleaning; the step-shaped aluminum nitride substrate comprises a step plane and a step vertical plane 6; the step surfaces comprise a first step surface 4 and a second step surface 5;
2. placing the cleaned step-shaped aluminum nitride substrate 1 in a magnetron sputtering instrument, and preparing a metal layer 2 on the step surface of the step-shaped aluminum nitride substrate 1 according to the method of the embodiment 2;
3. and putting the metallized step-shaped aluminum nitride substrate 1 and the metal layer 2 into a magnetron sputtering device, and evaporating a welding layer 3 which is used for welding a laser chip and has a preset pattern and an area on the metal layer of the first step surface 4 according to requirements. The area of the metal layer on the first step surface 4 is larger than or equal to the area of the welding layer 3, and the height of the step vertical plane 6 is larger than the total thickness of the metal layer on the first step surface 4 and the welding layer 3, so that the etching-free preparation of the semiconductor laser heat sink structure is realized.
The area of the welding layer 3 is larger than or equal to that of the laser chip, the laser chip can be a 808nm high-power laser chip produced by JENOPTIK company, the length is 1500 mu m, the width is 100 mu m, the thickness is 120 mu m, and the model is JDL-BAB-75-62-808-TE-300-1.5.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations and simplifications are intended to be included in the scope of the present invention.

Claims (10)

1. A preparation method of an etching-free semiconductor laser heat sink structure is characterized by comprising the following specific steps:
s1, preparing a metal layer on a plane of a step-shaped aluminum nitride substrate with two polished sides by adopting a magnetron sputtering method; the step-shaped aluminum nitride substrate comprises a step plane and a step vertical plane, and the metal layer is arranged on the step surface; the step surface comprises a first step surface and a second step surface;
s2, preparing a welding layer on the surface of the metal layer by adopting a magnetron sputtering method, wherein the welding layer is arranged on the metal layer on the surface of the first step, the area of the metal layer on the surface of the first step is larger than or equal to that of the welding layer, and the height of the vertical plane of the step is larger than the total thickness of the metal layer and the welding layer on the surface of the first step, so that the etching-free preparation of the heat sink structure of the semiconductor laser is realized.
2. The method for preparing a heat sink structure of an etch-free semiconductor laser as claimed in claim 1, wherein the surface roughness of the stepped aluminum nitride substrate in step S1 is less than 0.5, the thermal conductivity is 200-250W/m-k, and the thickness is 0.3-0.4 mm.
3. The method for preparing an etching-free semiconductor laser heat sink structure as claimed in claim 1, wherein the metal layer on the surface of the stepped aluminum nitride substrate in step S1 is a Cu layer, a Ni layer, an Au layer and a Pt layer in this order.
4. The method for preparing a heat sink structure of an etch-free semiconductor laser as claimed in claim 3, wherein the thickness of the Cu layer is 60-80 μm, the thickness of the Ni layer is 1-4 μm, the thickness of the Au layer is 0.5-1.2 μm, and the thickness of the Pt layer is 0.3-0.5 μm.
5. The method for preparing an etch-free semiconductor laser heat sink structure as claimed in claim 3, wherein the area of the Pt layer is greater than or equal to the area of the solder layer in step S2.
6. The method for preparing a heat sink structure of an etch-free semiconductor laser as claimed in claim 1 wherein the solder layer in step S2 is gold-tin alloy or indium.
7. The method for preparing an etch-free semiconductor laser heat sink structure as claimed in claim 6, wherein the gold and tin in the gold-tin alloy account for 80% and 20%.
8. A semiconductor laser heat sink structure, wherein the semiconductor laser heat sink structure is made by the method of any of claims 1-7.
9. A semiconductor laser heat sink structure as claimed in claim 8, wherein the heat sink structure is formed by sequentially forming a metal layer and a solder layer on a plane of a double-side polished stepped aluminum nitride substrate; the stepped aluminum nitride substrate comprises a stepped surface and a stepped vertical surface, and the metal layer is on the stepped surface; the ladder surface includes first ladder surface and second ladder surface, the welding layer is in on the metal level of first ladder surface, the area of the metal level of first ladder surface is greater than or equal to the area of welding layer, the height of ladder vertical plane is greater than the gross thickness of metal level and welding layer on the first ladder surface.
10. Use of the semiconductor laser heat sink structure of claim 8 or 9 in high power semiconductor lasers.
CN202210389529.1A 2022-04-14 2022-04-14 Etching-free semiconductor laser heat sink structure and preparation method and application thereof Pending CN114908320A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1527448A (en) * 2003-03-08 2004-09-08 ���ǵ�����ʽ���� Auxiliary assembling base for semiconductor laser diode and producing method thereof
US20050067636A1 (en) * 2002-03-06 2005-03-31 Sumitomo Electric Industries, Ltd. Submount and semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050067636A1 (en) * 2002-03-06 2005-03-31 Sumitomo Electric Industries, Ltd. Submount and semiconductor device
CN1527448A (en) * 2003-03-08 2004-09-08 ���ǵ�����ʽ���� Auxiliary assembling base for semiconductor laser diode and producing method thereof

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