CN114899250A - 一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法 - Google Patents
一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法 Download PDFInfo
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- 230000005622 photoelectricity Effects 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法，其特征在于：（1）选用普通玻璃为衬底材料；（2）用丙酮、酒精、去离子水依次对衬底材料进行超声清洗，热风吹干；（3）将衬底材料送入溅射腔室，开启磁控溅射设备，当真空度达1.0‑4.0*10‑4 Pa，通入氩气，启动靶材，进行预溅射；以金属钨，ZnS，Ag为溅射靶材，其中金属钨为高纯靶，ZnS为陶瓷靶材，三者互成45°交角；（4）预溅射完毕，独立设定各层的工艺参数，依次制得ZnS薄膜、Ag薄膜和WO3薄膜；（5）镀制完毕，关闭起辉电源，加热样品台至400‑500℃，对样品进行退火，冷却，取出即得ZnS/Ag/WO3薄膜。本发明优点：每个靶材工艺参数可独立设置，制备工艺简单，重复性好，ZnS/Ag/WO3薄膜应用于前电极，电池的转化效率明显提高。
Description
技术领域
本发明属于薄膜的制备技术领域，涉及一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法。
背景技术
近几年薄膜太阳能电池快速发展，由于清洁、安全、无污染，其已经占据整个光伏市场份额的15％以上，目前作为太阳能电池前电极的透明导电氧化物薄膜已成为薄膜组件的必要构成部分，而且目前其需求呈增长态势。传统的薄膜太阳能电池电极在近红外波段（700nm~900nm之间）的吸收系数较低，这进一步限制了薄膜的转化效率，而非球形Ag纳米颗粒由于其自身的属性使其在光电等领域表现较为优异，特别是其特有的等离子共振作用，可增强薄膜对光的吸收和利用，但其应用在太阳能电池的前电极上研究较少。
发明内容
本发明的目的是为了弥补现有技术的不足，提供一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法。
为了实现上述目的，本发明采用的技术方案如下：
一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法，其特征在于包括如下步骤：
（1）选用普通的玻璃为衬底材料；
（2）采用丙酮、酒精、去离子水依次对衬底材料进行超声波清洗，热风吹干，备用；
（3）将衬底材料置于样品架上，并送入溅射腔室，开启磁控溅射设备，当真空度达到1.0-4.0*10-4 Pa时，通入氩气，启动靶材，进行10min预溅射；以金属钨，ZnS，Ag为溅射靶材，其中金属钨为高纯靶，ZnS为陶瓷靶材，三者互成45°交角，Ag为金属靶材；
（4）预溅射完毕，独立设定各层的工艺参数，依次制得ZnS薄膜、Ag薄膜和WO3薄膜；
（5）镀制完毕，关闭起辉电源，同时加热样品台至400-500℃，对样品进行退火，退火结束，样品随机器空冷至室温，然后取出，最终得到符合太阳能电池使用要求的ZnS/Ag/WO3薄膜。
进一步，所述ZnS薄膜镀制的工艺参数为：功率100-200W，工作气压0.5-1.0Pa，Ar总流量为：20-30sccm，溅射时间为30-40min。
进一步，所述Ag薄膜镀制的工艺参数为：功率40-50W，工作气压0.2-0.3Pa，Ar流量为：10-20sccm，溅射时间为5-8s。
进一步，所述WO3薄膜镀制的工艺参数为：功率80-120W，工作气压0.3-1.0Pa，O2通入量为5-8sccm，Ar通入量为：13-20sccm，溅射时间为15-20min。
进一步，所述ZnS薄膜的厚度为100-150nm，Ag薄膜的厚度为10-15nm，WO3薄膜厚度为80-120nm。
本发明利用磁控溅射镀膜设备，采用两个靶材镀制氧化钨和硫化锌薄膜，再用垂直靶镀制Ag膜，三个相当独立的靶材进行配合，制得ZnS/Ag/WO3薄膜，而后利用磁控溅射样品台可进行加热的功能，不取出样品，直接对其进行400-500℃退火，使得Ag层逐渐转化成非球形Ag纳米颗粒，最终制备符合性能要求的柔性电子材料-太阳能电池ZnS/Ag/WO3薄膜。
本发明的有益效果体现在：
1.三个靶材相对独立（金属钨，ZnS、Ag都可进行单独溅射），每个靶材工艺参数可独立设置，通过工艺参数的调整，可制备任意厚度和性能的薄膜；
2.制备工艺简单，重复性好，可节约大量靶材的购买成本，提高靶材的利用率；
3.利用磁控溅射样品台可进行加热的特性，对所制备的三层薄膜进行升温退火，达到对Ag层直接进行加热并向非球形Ag纳米颗粒转变的效果，避免了样品取出来再进行加热造成的二次污染；
4.制备好的ZnS/Ag/WO3薄膜应用于前电极，电池的转化效率明显提高。
具体实施方式：
一种用于太阳能电池ZnS/Ag/WO3薄膜的制备方法，具体实施步骤如下：
以下实施例中三个靶材互成45°交角：
实施例1
（1）以纯度为99.99%的金属钨靶和陶瓷ZnS靶以及金属Ag作为溅射靶材；以普通玻璃为衬底材料，按常规方法依次用丙酮、酒精、去离子水对衬底材料进行超声波清洗，以去除表面油脂和污物，而后用热风吹干备用；
（2）将吹干后的衬底材料放入溅射腔室中，当腔室真空度达到6.0*10-4Pa时，通入氩气，氩离子轰击靶材，达到活化靶材和去除表面氧化物的目的，进行10min预溅射；
（3）预溅射完毕，设定工艺参数为：功率200W，工作气压0.5Pa，Ar总流量为：30sccm，溅射时间为30min，进行第一层ZnS薄膜的镀制，所得薄膜厚度为100nm；第一层完毕，设定第二层工艺参数：功率50W，工作气压0.2Pa，Ar流量为：10sccm，溅射时间为8s，制备薄膜厚度为10nm的Ag薄膜，第二层完毕，设定第三层的工艺参数：功率80W，工作气压0.6Pa，O2通入量为8sccm，Ar通入量为：20sccm，溅射时间为15min，制得厚度为80nm厚的WO3薄膜；
（4）镀制完毕，关闭起辉电源，同时加热样品台至450℃，对样品进行退火，退火结束，样品随机器空冷至室温，然后取出，最终得到符合太阳能电池使用要求的ZnS/Ag/WO3薄膜。
实施例2
（1）以纯度为99.99%的金属钨靶和陶瓷ZnS靶以及金属Ag作为溅射靶材；以普通玻璃为衬底材料，按常规方法依次用丙酮、酒精、去离子水对衬底材料进行超声波清洗，以去除表面油脂和污物，随后用热风吹干备用；
（2）将吹干后的衬底材料放入溅射腔室中，当腔室真空度达到4.0*10-4Pa时，通入氩气，氩离子轰击靶材，达到活化靶材和去除表面氧化物的目的，进行10min预溅射；
（3）预溅射完毕，设定工艺参数为：功率100W，工作气压1.0Pa，Ar总流量为：20sccm，溅射时间为40min，进行第一层ZnS薄膜的镀制，所得薄膜厚度为150nm；第一层完毕，设定第二层工艺参数：功率40W，工作气压0.3Pa，Ar流量为：20sccm，溅射时间为5s，制备薄膜厚度为15nm的Ag薄膜，第二层完毕，设定第三层的工艺参数：功率100W，工作气压1.0Pa，O2通入量为6sccm，Ar通入量为：15sccm，溅射时间为20min，制得厚度为100nm厚的WO3薄膜；
（4）镀制完毕，关闭起辉电源，同时加热样品台至500℃，对样品进行退火，退火结束，样品随机器空冷至室温，然后取出，最终得到符合太阳能电池使用要求的ZnS/Ag/WO3薄膜。
实施例3
（1）以纯度为99.99%的金属钨靶和陶瓷ZnS靶以及金属Ag作为溅射靶材；以普通玻璃为衬底材料，按常规方法依次用丙酮、酒精、去离子水对衬底材料进行超声波清洗，以去除表面油脂和污物，随后用热风吹干备用；
（2）将吹干后的衬底材料放入溅射腔室中，当腔室真空度达到1.0*10-4Pa时，通入氩气，氩离子轰击靶材，达到活化靶材和去除表面氧化物的目的，进行10min预溅射；
（3）预溅射完毕，设定工艺参数为：功率150W，工作气压0.8Pa，Ar总流量为：25sccm，溅射时间为35min，进行第一层ZnS薄膜的镀制，所得薄膜厚度为130nm；第一层完毕，设定第二层工艺参数：功率50W，工作气压0.2Pa，Ar流量为：10sccm，溅射时间为8s，制备薄膜厚度为10nm的Ag薄膜，第二层完毕，设定第三层的工艺参数：功率120W，工作气压0.3Pa，O2通入量为5sccm，Ar通入量为：13sccm，溅射时间为20min，制得厚度为120nm厚的WO3薄膜；
（4）镀制完毕，关闭起辉电源，同时加热样品台至400℃，对样品进行退火，退火结束。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。
Claims (5)
1.一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法，其特征在于包括如下步骤：
（1）选用普通的玻璃为衬底材料；
（2）采用丙酮、酒精、去离子水依次对衬底材料进行超声波清洗，热风吹干，备用；
（3）将衬底材料置于样品架上，并送入溅射腔室，开启磁控溅射设备，当真空度达到1.0-4.0*10-4 Pa时，通入氩气，启动靶材，进行10min预溅射；以金属钨，ZnS，Ag为溅射靶材，其中金属钨为高纯靶，ZnS为陶瓷靶材，三者互成45°交角，Ag为金属靶材；
（4）预溅射完毕，独立设定各层的工艺参数，依次制得ZnS薄膜、Ag薄膜和WO3薄膜；
（5）镀制完毕，关闭起辉电源，同时加热样品台至400-500℃，对样品进行退火，退火结束，样品随机器空冷至室温，然后取出，即得ZnS/Ag/WO3薄膜。
2.根据权利要求1所述一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法，其特征在于：所述ZnS薄膜镀制的工艺参数为：功率100-200W，工作气压0.5-1.0Pa，Ar总流量为：20-30sccm，溅射时间为30-40min。
3.根据权利要求1所述一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法，其特征在于：所述Ag薄膜镀制的工艺参数为：功率40-50W，工作气压0.2-0.3Pa，Ar流量为：10-20sccm，溅射时间为5-8s。
4.根据权利要求1所述一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法，其特征在于：所述WO3薄膜镀制的工艺参数为：功率80-120W，工作气压0.3-1.0Pa，O2通入量为5-8sccm，Ar通入量为：13-20sccm，溅射时间为15-20min。
5.根据权利要求1-4任一项所述一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法，其特征在于：所述ZnS薄膜的厚度为100-150nm，Ag薄膜的厚度为10-15nm，WO3薄膜厚度为80-120nm。
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