CN108642463A - 一种用于太阳能电池前电极复合薄膜的制备方法 - Google Patents

一种用于太阳能电池前电极复合薄膜的制备方法 Download PDF

Info

Publication number
CN108642463A
CN108642463A CN201810560590.1A CN201810560590A CN108642463A CN 108642463 A CN108642463 A CN 108642463A CN 201810560590 A CN201810560590 A CN 201810560590A CN 108642463 A CN108642463 A CN 108642463A
Authority
CN
China
Prior art keywords
target
substrate
laminated film
layers
sputter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201810560590.1A
Other languages
English (en)
Inventor
彭寿
沈洪雪
姚婷婷
杨勇
李刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Original Assignee
CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd filed Critical CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Priority to CN201810560590.1A priority Critical patent/CN108642463A/zh
Publication of CN108642463A publication Critical patent/CN108642463A/zh
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明公开一种用于太阳能电池前电极复合薄膜的制备方法，包括以下步骤：清洗衬底，去除衬底表面油污和杂质；采用磁控溅射设备，以Al2O3靶、ZnO靶与Ag靶为溅射靶材，衬底置于磁控溅射设备的真空腔室内；通入工作气体氩气，开启Al2O3靶与ZnO靶，在衬底上溅镀第一AZO薄膜层；开启Ag靶，在第一AZO薄膜层上溅镀Ag层；开启Al2O3靶与ZnO靶，在Ag层上溅镀第二AZO薄膜层，得到三层结构的复合薄膜；加热放置衬底的样品台至400℃，对步骤S5得到的复合薄膜退火处理；利用样品台能够进行加热的特性，对所制备的三层薄膜进行升温退火，达到对Ag层直接进行加热并向非球形Ag纳米颗粒转变的效果，避免了样品取出来再进行加热造成的二次污染。

Description

一种用于太阳能电池前电极复合薄膜的制备方法
技术领域
本发明涉及一种用于太阳能电池前电极复合薄膜的制备方法。
背景技术
近几年薄膜太阳能电池快速发展，由于清洁、安全、无污染，其已经占据整个光伏市场份额的15％以上，目前作为太阳能电池前电极的透明导电氧化物薄膜已成为薄膜组件的必要构成部分，而且目前其需求呈增长态势。
非球形Ag纳米颗粒由于其自身的属性使其在光电等领域表现较为优异，特别是其表面等离子共振行为，尤为得到重视。传统的薄膜太阳能电池电极在近红外波段的吸收系数较低，这进一步限制了薄膜的转化效率，而非球形Ag纳米颗粒其特有的等离子共振作用，可增强薄膜对光的吸收和利用，比较适合目前太阳能电池的发展需要。目前,结合非球形Ag纳米颗粒的复合薄膜大多工艺复杂,成本高,难以推广应用。
发明内容
本发明的目的在于提供一种用于太阳能电池前电极复合薄膜的制备方法，该方法能够得到符合太阳能电池前电极要求的AZO/ Ag/AZO复合薄膜，工艺简单，过程可控。
本发明解决其技术问题所采用的技术方案是：
一种用于太阳能电池前电极复合薄膜的制备方法，包括以下步骤：
S1、清洗衬底，去除衬底表面油污和杂质；
S2、采用磁控溅射设备，以Al2O3靶、ZnO靶与Ag靶为溅射靶材，衬底置于磁控溅射设备的真空腔室内；
S3、通入工作气体氩气，开启Al2O3靶与ZnO靶，在衬底上溅镀第一AZO薄膜层；
S4、开启Ag靶，在第一AZO薄膜层上溅镀Ag层；
S5、开启Al2O3靶与ZnO靶，在Ag层上溅镀第二AZO薄膜层，得到三层结构的复合薄膜；
S6、加热放置衬底的样品台至400℃，对步骤S5得到的复合薄膜退火处理。
进一步的，步骤S3与步骤S5溅镀时，Al2O3靶的溅镀功率60W，ZnO靶的溅镀功率130W，工作气压1.0Pa，Ar总流量30sccm，溅射时间20min。
进一步的，所述S4溅镀时，Ag靶的溅镀功率30W，工作气压0.3Pa，Ar总流量10sccm，溅射时间10s。
本发明的有益效果是，三个靶材相互独立，溅射时的工艺参数可根据需要进行独立设定，可以制备任意掺杂量并符合薄膜使用要求的Al掺杂ZnO薄膜；制备工艺简单，重复性好，并且可节约大量靶材的购买成本，提高靶材的利用率；
利用磁控溅射设备的样品台能够进行加热的特性，对所制备的三层薄膜进行升温退火，达到对Ag层直接进行加热并向非球形Ag纳米颗粒转变的效果，避免了样品取出来再进行加热造成的二次污染。
具体实施方式
本发明提供一种用于太阳能电池前电极复合薄膜的制备方法，包括以下步。骤：
S1、清洗衬底，去除衬底表面油污和杂质；
S2、采用磁控溅射设备，以Al2O3靶、ZnO靶与Ag靶为溅射靶材，衬底置于磁控溅射设备的真空腔室内；
S3、通入工作气体氩气，开启Al2O3靶与ZnO靶，Al2O3靶的溅镀功率60W，ZnO靶的溅镀功率130W，工作气压1.0Pa，Ar总流量30sccm，溅射时间20min，在衬底上溅镀35mm厚度的第一AZO薄膜层；
S4、开启Ag靶，Ag靶的溅镀功率30W，工作气压0.3Pa，Ar总流量10sccm，溅射时间10s，在第一AZO薄膜层上溅镀8nm厚度的Ag层；
S5、开启Al2O3靶与ZnO靶，Al2O3靶的溅镀功率60W，ZnO靶的溅镀功率130W，工作气压1.0Pa，Ar总流量30sccm，溅射时间20min，在Ag层上溅镀35mm厚度的第二AZO薄膜层，得到三层结构的复合薄膜；
S6、加热放置衬底的样品台至400℃，对步骤S5得到的复合薄膜退火处理，最终得到AZO/ Ag/AZO结构的复合薄膜。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (3)

1.一种用于太阳能电池前电极复合薄膜的制备方法，其特征在于，包括以下步骤：
S1、清洗衬底，去除衬底表面油污和杂质；
S2、采用磁控溅射设备，以Al2O3靶、ZnO靶与Ag靶为溅射靶材，衬底置于磁控溅射设备的真空腔室内；
S3、通入工作气体氩气，开启Al2O3靶与ZnO靶，在衬底上溅镀第一AZO薄膜层；
S4、开启Ag靶，在第一AZO薄膜层上溅镀Ag层；
S5、开启Al2O3靶与ZnO靶，在Ag层上溅镀第二AZO薄膜层，得到三层结构的复合薄膜；
S6、加热放置衬底的样品台至400℃，对步骤S5得到的复合薄膜退火处理。
2.根据权利要求1所述的一种用于太阳能电池前电极复合薄膜的制备方法，其特征在于，步骤S3与步骤S5溅镀时，Al2O3靶的溅镀功率60W，ZnO靶的溅镀功率130W，工作气压1.0Pa，Ar总流量30sccm，溅射时间20min。
3.根据权利要求1所述的一种用于太阳能电池前电极复合薄膜的制备方法，其特征在于，所述S4溅镀时，Ag靶的溅镀功率30W，工作气压0.3Pa，Ar总流量10sccm，溅射时间10s。
CN201810560590.1A 2018-06-04 2018-06-04 一种用于太阳能电池前电极复合薄膜的制备方法 Withdrawn CN108642463A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810560590.1A CN108642463A (zh) 2018-06-04 2018-06-04 一种用于太阳能电池前电极复合薄膜的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810560590.1A CN108642463A (zh) 2018-06-04 2018-06-04 一种用于太阳能电池前电极复合薄膜的制备方法

Publications (1)

Publication Number Publication Date
CN108642463A true CN108642463A (zh) 2018-10-12

Family

ID=63759255

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810560590.1A Withdrawn CN108642463A (zh) 2018-06-04 2018-06-04 一种用于太阳能电池前电极复合薄膜的制备方法

Country Status (1)

Country Link
CN (1) CN108642463A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112599614A (zh) * 2020-12-25 2021-04-02 中建材蚌埠玻璃工业设计研究院有限公司 一种反射光谱可调的CdTe薄膜太阳能电池
CN114899250A (zh) * 2022-04-14 2022-08-12 中建材玻璃新材料研究院集团有限公司 一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101215689A (zh) * 2007-12-27 2008-07-09 复旦大学 一种新的制备(002)织构Fe薄膜的方法
CN101985735A (zh) * 2009-07-29 2011-03-16 中国科学院福建物质结构研究所 一种氧化铝靶材和该靶材制备的透明导电薄膜
CN105489699A (zh) * 2015-12-02 2016-04-13 上海大学 用于太阳能薄膜电池前电极的AZO/Ag/AZO复合膜的制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101215689A (zh) * 2007-12-27 2008-07-09 复旦大学 一种新的制备(002)织构Fe薄膜的方法
CN101985735A (zh) * 2009-07-29 2011-03-16 中国科学院福建物质结构研究所 一种氧化铝靶材和该靶材制备的透明导电薄膜
CN105489699A (zh) * 2015-12-02 2016-04-13 上海大学 用于太阳能薄膜电池前电极的AZO/Ag/AZO复合膜的制备方法

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
DAGANG MIAO等: ""Infrared reflective properties of AZO/Ag/AZO trilayers prepared by RF magnetron sputtering"", 《CERAMICS INTERNATIONAL》 *
MINGLIANG LI等: ""AZO/Ag/AZO transparent flexible electrodes on mica substrates for high temperature application"", 《CERAMICS INTERNATIONAL》 *
S. SUTTHANA等: ""AZO/Ag/AZO multilayer films prepared by DC magnetron sputtering for dye-sensitized solar cell application"", 《CURRENT APPLIED PHYSICS》 *
刘思宁 等: ""粉末靶磁控溅射制备AZO/Ag/AZO透明导电薄膜的特性"", 《半导体材料》 *
陆浙 等: ""银基透明导电薄膜制备及其性能研究"", 《真空》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112599614A (zh) * 2020-12-25 2021-04-02 中建材蚌埠玻璃工业设计研究院有限公司 一种反射光谱可调的CdTe薄膜太阳能电池
CN114899250A (zh) * 2022-04-14 2022-08-12 中建材玻璃新材料研究院集团有限公司 一种用于太阳能电池的ZnS/Ag/WO3薄膜的制备方法

Similar Documents

Publication Publication Date Title
CN105821378B (zh) 一种铌掺杂二氧化锡透明导电膜及其制备方法
CN102625953B (zh) 太阳能电池前接触件掺杂
CN103560169B (zh) 一种大型太阳能薄膜电池片组件生产工艺及设备
CN103924199B (zh) 一种具有金属质感的有机材料壳体及其镀膜方法
CN102683433B (zh) 带有双面减反射膜的薄膜太阳能电池用导电玻璃及其制备方法
CN108642463A (zh) 一种用于太阳能电池前电极复合薄膜的制备方法
CN101497992A (zh) 用等离子体轰击制备绒面氧化锌透明导电镀膜玻璃的方法
CN111477710A (zh) 一种光伏组件用蓝色前板玻璃及其制备的蓝色光伏组件
CN101603171B (zh) 制备透明导电膜的设备的腔室系统及其方法
CN106011746A (zh) 用于卫星太阳电池阵的激光防护薄膜及其制备方法
CN104377261B (zh) 一种制备CdTe薄膜太阳能电池板方法
CN101654331A (zh) 一种制备绒面ZnO透明导电镀膜玻璃的方法
CN202887769U (zh) 眼镜镜片防雾透明导电薄膜
CN102683435B (zh) 薄膜太阳能电池用导电玻璃及其制备方法
CN102683436B (zh) 一种薄膜太阳能电池用导电玻璃及其制备方法
CN103924191A (zh) 在基片上镀制ito薄膜的方法
CN103985783B (zh) 利用磁控溅射法在柔性衬底上制备铜锌锡硫薄膜的方法
CN105601125A (zh) 一种用于电致变色玻璃的透明导电玻璃及其制备方法
CN101882632A (zh) 一种玻璃衬底绒面结构ZnO薄膜及应用
CN105575669B (zh) 一种染料敏化太阳能电池的制备方法
CN105063557A (zh) 一种定向增加ito导电膜阻值的方法
CN102683434B (zh) 带有单面减反射膜的薄膜太阳能电池用导电玻璃及其制备方法
CN204760399U (zh) 一种中空智能光伏组件及其智能光伏组件
Chen et al. New natively textured surface Al-doped ZnO-TCOs for thin film solar cells via magnetron sputtering
CN108831938A (zh) 一种cigs太阳能电池及其制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication
WW01 Invention patent application withdrawn after publication

Application publication date: 20181012