CN114899086A - Method for cleaning polluted impurities of semiconductor wafer - Google Patents
Method for cleaning polluted impurities of semiconductor wafer Download PDFInfo
- Publication number
- CN114899086A CN114899086A CN202210525169.3A CN202210525169A CN114899086A CN 114899086 A CN114899086 A CN 114899086A CN 202210525169 A CN202210525169 A CN 202210525169A CN 114899086 A CN114899086 A CN 114899086A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- hose
- pipe
- liquid inlet
- cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000012535 impurity Substances 0.000 title claims abstract description 18
- 238000005507 spraying Methods 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 56
- 239000007788 liquid Substances 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 229910052742 iron Inorganic materials 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 230000000903 blocking effect Effects 0.000 claims description 14
- 230000033001 locomotion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 1
- 230000008859 change Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 238000005457 optimization Methods 0.000 description 5
- 238000012797 qualification Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005291 magnetic effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/26—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
- B05B12/06—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for effecting pulsating flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/12—Spray pistols; Apparatus for discharge designed to control volume of flow, e.g. with adjustable passages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for cleaning polluted impurities of a semiconductor wafer, which is used for cleaning the semiconductor wafer by adopting high-frequency pulse jet type rotary spraying cleaning equipment. The method for cleaning the polluted impurities of the semiconductor wafer can quickly clean the semiconductor wafer with the photoresist film on the surface, and is short in cleaning time and high in cleaning efficiency.
Description
Technical Field
The invention relates to a method for cleaning polluted impurities of a semiconductor wafer, belonging to the technical field of semiconductor cleaning.
Background
In the rotary spraying method, the wafer is enabled to reach a higher rotating speed through a mechanical method, and meanwhile, high-purity deionized water or other cleaning liquid is continuously sprayed to the surface and the back of the wafer in the rotating process, so that the polluted impurities on the surface and the back of the wafer are removed. The technology is mainly used for separating the polluted impurities and the liquid dissolved with the impurities from the surface and the back of the wafer by chemical reaction or dissolution of the sprayed liquid and combining centrifugal force caused by high-speed rotation. The technology combines the advantages of hydromechanical cleaning and chemical cleaning, and simultaneously can play a certain role in high-pressure cleaning. In practical application, the spin-drying process can be combined, the spraying of deionized water is stopped after a period of time, the inert gas spraying is changed, the rotating speed is properly increased, the centrifugal force is improved, and the effect of quickly dehydrating the surface and the back of the wafer is achieved.
A schematic structural diagram of a conventional rotary spray cleaning apparatus is shown in fig. 1, and the conventional rotary spray cleaning apparatus includes a rotary suction cup 1 and a swing arm type nozzle 2, wherein a jet flow with water pressure and flow rate and temperature is ejected from the swing arm type nozzle 2, stains on the surface of a semiconductor wafer (such as silicon carbide) are dissolved by utilizing the dissolving effect of the ejected liquid, and meanwhile, the liquid dissolved with impurities is separated from the surface of the semiconductor wafer in time by utilizing the centrifugal effect of high-speed rotation. Meanwhile, the sprayed liquid and the rotating semiconductor wafer have higher relative speed, so that larger impact force can be generated, and adsorbed impurities can be removed under the action of the impact force.
When the semiconductor wafer coated with the photoresist is cleaned by the existing rotary spraying cleaning equipment, the water pressure of the jet flow sprayed by the swing arm type nozzle 2 of the existing rotary spraying cleaning equipment is constant, and the photoresist film is not easily broken by the constant jet flow due to the existence of the interfacial tension, so the cleaning time is usually longer, and the cleaning time is generally 5min at least. In the actual research process, the company discovers that: if the jet flow sprayed by the swing arm type nozzle 2 fluctuates continuously and the fluctuation range is large, pits with different depths are easy to be formed by the impact of the photoresist film, and the pits with different depths can greatly reduce the influence of the interfacial tension on the photoresist film, so that the cleaning difficulty can be reduced theoretically, and the cleaning efficiency is improved. However, how to obtain the jet flow with continuous fluctuation of water pressure or flow velocity and large fluctuation amplitude is difficult, the traditional method is realized by using a variable frequency water pump, when the water pump works in a variable frequency mode, a water pump motor starts to operate after being started in a soft start mode, a remote transmission pressure gauge detects the actual pressure of a water supply pipe, the actual pressure in the pipe is compared with the set pressure to output a deviation signal, the deviation signal controls and adjusts the power frequency output by a frequency converter, the rotating speed of the water pump is changed, and the pressure in the pipe is continuously close to the set pressure; the closed-loop control system realizes that the pressure in the pipe tends to a set value through the repeated process of continuous detection and continuous adjustment; this process is time consuming because the required set value does not fluctuate over time during the cleaning process, which results in the set value not being able to be changed in a short time, and it also takes several seconds to reach the set value using PLC technology, which is obviously impractical. If a set value is not set, the pressure in the pipe is in random and disordered change, although jet flow with water pressure fluctuation can be obtained, the fluctuation range is not controlled, experiments show that if the amplitude of flow rate change cannot reach a certain value, the generated cleaning effect is limited, so that the whole cleaning effect is easy to be uncontrolled, if the qualification rate of cleaning for 3min is more than 80%, in order to improve the qualification rate, the cleaning time needs to be prolonged, and the qualification rate can reach more than 98% at least by cleaning for more than 4min (close to 5 min); the improvement effect is not significant.
Therefore, it is necessary to develop a method for cleaning a semiconductor wafer with higher cleaning efficiency.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a method for cleaning polluted impurities of a semiconductor wafer, which has the following specific technical scheme:
a method for cleaning contaminated impurities of a semiconductor wafer comprises the following steps: the high-frequency pulse jet type rotary spraying cleaning equipment is used for cleaning the semiconductor wafer and comprises a rotary sucker, a high-frequency pulse jet type nozzle and a rectifying assembly for rectifying jet flow sprayed by the high-frequency pulse jet type nozzle.
According to the further optimization of the technical scheme, the high-frequency pulse jet type nozzle comprises a metal outer cylinder, an inner cylinder nozzle, an intermittent plugging component, a circular tube-shaped liquid inlet pipe, a second taper pipe, a safety air valve and an air valve group, wherein a cylinder cover is hermetically mounted at the upper end of the metal outer cylinder, an inverted cone-shaped cylinder bottom is arranged at the lower end of the metal outer cylinder, a first through hole is formed in the center of the cylinder bottom, a second through hole is formed in the center of the cylinder cover, two third through holes which are respectively located on the left side and the right side of the second through hole and two fourth through holes which are respectively located on the left side and the right side of the second through hole are further formed in the cylinder cover, one end of the safety air valve is communicated with the third through hole, and one end of the air valve group is communicated with the fourth through hole; the inner cylinder nozzle sequentially comprises a first hose, a circular tube-shaped hard pipe, a second hose and a first taper pipe from top to bottom, the first hose, the circular tube-shaped hard pipe, the second hose and the first taper pipe are communicated with each other, the lower end of the liquid inlet pipe is communicated with the upper end of the first hose, the lower end of the first taper pipe is communicated with the upper end of the second taper pipe, the inner wall of the second hose is of an ellipsoidal structure, the cone angle of the first taper pipe is larger than that of the second taper pipe, the inner diameter of the lower end of the second taper pipe is smaller than that of the upper end of the second taper pipe, and the inner diameter of the lower end of the first taper pipe is smaller than that of the upper end of the first taper pipe; the upper end of the liquid inlet pipe is arranged above the metal outer cylinder, the first hose, the hard pipe and the second hose are all arranged inside the metal outer cylinder, the lower end of the second taper pipe is arranged below the metal outer cylinder, an air pressure cavity is arranged between the inner cylinder nozzle and the metal outer cylinder, and a function chamber is arranged inside the inner cylinder nozzle; the intermittent plugging assembly comprises a circular electromagnet fixedly arranged in the hard tube, a cylindrical spiral spring and a hollow iron ball for plugging the lower end of the first taper tube, wherein the upper end of the cylindrical spiral spring is fixedly connected with the electromagnet, and the lower end of the cylindrical spiral spring is fixedly connected with the hollow iron ball; and a liquid inlet valve group is arranged at the liquid inlet pipe.
According to the further optimization of the technical scheme, the rectifying assembly comprises a flow breaking head, an L-shaped metal wire, a blocking piece, an air cylinder and a limiting assembly, wherein the flow breaking head is located between the second taper pipe and the rotary sucker, the blocking piece is fixedly installed at the tail end of the metal wire, the air cylinder is used for driving the metal wire to perform translational reciprocating linear motion along a horizontal plane, the limiting assembly is used for limiting the moving range of the blocking piece, the flow breaking head comprises a hemispherical ball seat, and a conical taper head is arranged at the top of the ball seat; the upper end of the metal wire is fixedly connected with the bottom of the ball seat, and a piston rod of the cylinder is fixedly connected with the blocking piece; the limiting assembly comprises a rotating roller, a plurality of blocking pieces used for blocking the blocking pieces are fixedly mounted on a roller body of the rotating roller, and the two adjacent blocking pieces are staggered.
The technical scheme is further optimized, the cone angle of the cone head is alpha, and alpha is more than or equal to 60 degrees and less than 90 degrees.
According to the further optimization of the technical scheme, when the difference between the internal pressure and the external pressure of the first hose is balanced, the curve obtained by cutting the outer wall of the first hose by the axial section of the first hose is of a parabolic structure, and the curve obtained by cutting the inner wall of the first hose by the axial section of the first hose is of a parabolic structure.
According to the technical scheme, the liquid inlet pipe is externally connected with the corrosion-resistant constant pressure pump, the air valve set is externally connected with the air pump, the air valve set is formed by mutually connecting the check valve and the electromagnetic air valve in series, and the liquid inlet valve set is formed by mutually connecting the electromagnetic water valve and the check valve in series.
According to the further optimization of the technical scheme, the hollow iron ball comprises a hemispherical hollow ball body and a conical hollow cone part, the cone angle of the hollow cone part is 90 degrees, and the tip end of the hollow cone part is fixedly connected with the lower end of the cylindrical spiral spring.
According to the further optimization of the technical scheme, when the photoresist film on the surface of the semiconductor wafer is cleaned by adopting high-frequency pulse jet type rotary spraying cleaning equipment, the semiconductor wafer to be cleaned is placed at a rotary sucker, the rotating speed of the rotary sucker is 1000r/min, a corrosion-resistant constant-pressure pump is used for conveying cleaning liquid to a liquid inlet pipe, an air pump is externally connected with an air valve group, the cleaning liquid enters a functional chamber through the liquid inlet pipe, and finally high-frequency pulse jet is sprayed out from a second conical pipe, the flow velocity of the high-frequency pulse jet is converted at the frequency of 5Hz, the conversion amplitude of the flow velocity is more than 1 m/s, and the pressure of fluid in the liquid inlet pipe is 0.16 MPa; the rotating speed of the rotating roller is 10 r/min; after cleaning for 130s, cleaning is complete.
The invention has the beneficial effects that:
the method for cleaning the polluted impurities of the semiconductor wafer can quickly clean the semiconductor wafer with the photoresist film on the surface, and is short in cleaning time and high in cleaning efficiency.
Drawings
FIG. 1 is a schematic structural diagram of a prior art rotary spray cleaning apparatus;
FIG. 2 is a schematic structural diagram of the high-frequency pulse jet type rotary spray cleaning equipment of the invention;
FIG. 3 is a schematic structural diagram of a high-frequency pulse jet nozzle according to the present invention;
FIG. 4 is a schematic structural diagram of the metal outer cylinder according to the present invention;
FIG. 5 is a schematic view of the inner nozzle of the present invention;
FIG. 6 is a schematic structural view of the flow breaking head according to the present invention;
FIG. 7 is a schematic structural view of a stop assembly according to the present invention;
FIG. 8 is a schematic structural view (side view) of the stop assembly of the present invention;
fig. 9 is a schematic structural view of the hollow iron ball according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
As shown in fig. 2, the method for cleaning the contaminated impurities of the semiconductor wafer comprises the following steps: the high-frequency pulse jet type rotary spraying cleaning equipment is used for cleaning a semiconductor wafer and comprises a rotary sucker 1, a high-frequency pulse jet type nozzle 10 and a rectifying assembly for rectifying jet flow sprayed by the high-frequency pulse jet type nozzle 10.
As shown in fig. 3 to 5, the high-frequency pulse jet nozzle 10 includes a metal outer cylinder 11, an inner cylinder nozzle 12, an intermittent plugging component, a tubular liquid inlet pipe 13, a second taper pipe 14, a safety air valve 17, and an air valve group 18, wherein a cylinder cover is hermetically installed at the upper end of the metal outer cylinder 11, an inverted cone-shaped cylinder bottom 111 is installed at the lower end of the metal outer cylinder 11, a first through hole 112 is installed at the center of the cylinder bottom 111, a second through hole 115 is installed at the center of the cylinder cover, two third through holes 113 respectively located at the left and right sides of the second through hole 115 and two fourth through holes 114 respectively located at the left and right sides of the second through hole 115 are further installed at the cylinder cover, one end of the safety air valve 17 is communicated with the third through hole 113, and one end of the air valve group 18 is communicated with the fourth through holes 114; the inner cylinder nozzle 12 comprises a first hose 124, a round tube hard pipe 123, a second hose 122 and a first taper pipe 121 which are communicated with each other from top to bottom in sequence, the lower end of the liquid inlet pipe 13 is communicated with the upper end of a first hose 124, the lower end of the first hose 124 is communicated with the upper end of a hard pipe 123, the lower end of the hard pipe 123 is communicated with the upper end of the second flexible pipe 122, the lower end of the second flexible pipe 122 is communicated with the upper end of the first taper pipe 121, the lower end of the first taper pipe 121 is communicated with the upper end of the second taper pipe 14, the inner wall of the second hose 122 is an ellipsoidal structure, the cross section of the inner wall of the second hose 122 is an ellipse structure, the long axis direction of the ellipse is collinear with the axial direction of the inner cylinder mouth, the taper angle of the first taper pipe 121 is larger than that of the second taper pipe 14, the inner diameter of the lower end of the second taper pipe 14 is smaller than that of the upper end of the second taper pipe 14, and the inner diameter of the lower end of the first taper pipe 121 is smaller than that of the upper end of the first taper pipe 121; the upper end of the liquid inlet pipe 13 is arranged above the metal outer cylinder 11, the first hose 124, the hard pipe 123 and the second hose 122 are all arranged inside the metal outer cylinder 11, the lower end of the second taper pipe 14 is arranged below the metal outer cylinder 11, the first through hole 112 and the second through hole 115 are all in sealed connection with the outer wall of the inner cylinder nozzle, an air pressure cavity 15 is arranged between the inner cylinder nozzle 12 and the metal outer cylinder 11, and a function chamber 16 is arranged inside the inner cylinder nozzle 12; the intermittent plugging assembly comprises a circular ring-shaped electromagnet 23 fixedly installed inside the hard pipe 123, a cylindrical helical spring 22 and a hollow iron ball 21 for plugging the lower end of the first taper pipe 121, wherein the upper end of the cylindrical helical spring 22 is fixedly connected with the electromagnet 23, and the lower end of the cylindrical helical spring 22 is fixedly connected with the hollow iron ball 21; and a liquid inlet valve group 131 is arranged at the liquid inlet pipe 13.
The liquid inlet pipe 13 is externally connected with a corrosion-resistant constant pressure pump, and the air valve group 18 is externally connected with an air pump; the air valve group 18 is formed by connecting a check valve and an electromagnetic air valve in series, and the arrangement of the check valve can effectively prevent air pressure from leaking from the air valve group 18.
The liquid inlet valve set 131 is formed by connecting an electromagnetic water valve and a check valve in series, and the arrangement of the check valve is beneficial to preventing the water pressure in the functional chamber 16 from leaking.
The rigid tube 123 is arranged to provide support for mounting the electromagnet 23, for example, by providing a connecting rod for fixed mounting, and on the other hand, a wire for energizing the electromagnet 23 may be routed along the connecting rod and sequentially through the rigid tube 123 and the metal outer cylinder 11.
The provision of the inverted conical bottom 111 helps to concentrate the pressure. In addition, the cone angle at the bottom 111 is larger than that of the first cone pipe 121, so that a space is provided for installing the first cone pipe 121 on one hand, and a buffer space is provided for deformation of the second hose 122 on the other hand.
The inner barrel mouth 12 is preferably made of a non-ferromagnetic material.
The hard pipe 123 is disposed between the first hose 124 and the second hose 122, so that both the first hose 124 and the second hose 122 can be deformed in a directional manner, and can be deformed in a directional manner, thereby improving the buffering effect.
The corrosion-resistant constant-pressure pump conveys cleaning liquid (deionized water or hydrofluoric acid solution) to the liquid inlet pipe 13, and the air valve group 18 is externally connected with an air pump; the semiconductor wafer to be cleaned (such as a 6-inch silicon carbide wafer) is placed at the rotary sucker 1, the rotary sucker 1 drives the semiconductor wafer to be cleaned to rotate at a high speed, and meanwhile, in the rotating process, the high-frequency pulse jet flow which is sprayed from the second conical pipe 14 and consists of deionized water can continuously spray and clean the surface of the semiconductor wafer to be cleaned, so that the polluted impurities on the surface and the back of the wafer are removed.
The working process of the high-frequency pulse jet nozzle 10 in one cycle is divided into the following stages:
the first stage is as follows: the electromagnet 23 is not electrified, and under the action of the elastic force of the cylindrical spiral spring 22, the hollow iron ball 21 can be prompted to block the lower end of the first conical pipe 121, and at the moment, the cleaning solution is continuously pumped into the function chamber 16 through the corrosion-resistant constant-pressure pump; the pressure in the inlet pipe 13 is 0.16MPa, and the initial pressure in the functional chamber 16 is therefore also 0.16 MPa. Meanwhile, the air pump starts to continuously inflate the air pressure cavity 15, so that the air pressure in the air pressure cavity 15 is also 0.16 MPa; in this way, the pressure in the pneumatic chamber 15 is balanced with the pressure in the functional chamber 16, so that the pressure in the first hose 124 is balanced with the pressure in the second hose 122.
And a second stage: the electromagnet 23 is electrified to generate magnetic force, so that the hollow iron ball 21 is adsorbed, a gap is generated between the hollow iron ball 21 and the first taper pipe 121, the cleaning liquid in the functional chamber 16 enters the second taper pipe 14 from the gap between the hollow iron ball 21 and the first taper pipe 121, and the second taper pipe 14 can enable the sprayed jet to be more concentrated. The jet velocity (flow rate) of the jet flow ejected from the second taper pipe 14 can be changed by changing the gap between the hollow iron ball 21 and the first taper pipe 121. By controlling the current of the electromagnet 23, the magnetic force generated by the electromagnet can change the attraction force on the hollow iron ball 21, and by the arrangement of the cylindrical helical spring 22, the current of the electromagnet 23 can be changed rapidly, so that the flow velocity of the jet flow sprayed from the second taper pipe 14 can be changed rapidly.
The jet flow sprayed by the high-frequency pulse jet flow type nozzle 10 can rapidly change the flow velocity in a short time, the flow velocity can be changed for 5 times to 10 times in 1 second, and the amplitude of the flow velocity change is more than 1 m/s; that is, the jet flow ejected from the high-frequency pulse jet nozzle 10 can change the flow velocity at a frequency of 5 to 10Hz, and the amplitude of the change in the flow velocity is 1 m/s or more.
In this embodiment, when the air pressure cavity 15 and the function chamber 16 reach equilibrium, the air pressure in the air pressure cavity 15 also needs to reach 0.16MPa, and due to the arrangement of the one-way valve, excessive air pressure cannot overflow from the one-way valve; due to the arrangement of the check valve and the continuous water feeding to the function chamber 16, the water pressure in the function chamber 16 is at least 0.16 MPa; when the hollow iron ball 21 rapidly vibrates up and down, the water pressure in the functional chamber 16 can be instantly increased, and the instantly increased water pressure needs to be eliminated, otherwise, the newly increased water pressure can bring excessive newly-increased resistance, and the energy consumed by the rapid up-and-down vibration of the hollow iron ball 21 can be remarkably increased; the safety value set by the safety air valve 17 is that the safety air pressure set by the one-way valve is 0.1605MPa, when the newly increased water pressure in the functional chamber 16 is transmitted to the air pressure cavity 15 through the deformation of the second hose 122 and the first hose 124, the instantly increased air pressure exceeds 0.1605MPa, and the exceeded air pressure is exhausted from the safety air valve 17; with the continuous deformation and vibration of the second hose 122 and the first hose 124, the pneumatic chamber 15 dynamically changes around 0.16 MPa; when the hollow iron ball 21 stops vibrating for a period of time (such as 2 s), the air is supplied to the air pressure cavity 15 again, so that the air pressure is restored to 0.16MPa again.
Preferably, the surfaces of the electromagnet 23, the cylindrical coil spring 22 and the hollow iron ball 21 are coated with teflon. Besides the anti-corrosion effect, the teflon coating can also increase the sealing performance of the hollow iron ball 21 to the lower end of the first conical pipe 121 for the hollow iron ball 21.
Example 2
The hollow iron ball 21 is provided in a hollow structure mainly for weight reduction. According to embodiment 1, as shown in fig. 3 and 9, the hollow iron ball 21 includes a hemispherical hollow sphere 211 and a conical hollow cone 212, the cone angle of the hollow cone 212 is 90 °, and the tip of the hollow cone 212 is fixedly connected to the lower end of the cylindrical coil spring 22.
Firstly, the hemispherical hollow sphere 211 is used for better sealing the lower end of the first taper pipe 121; secondly, the provision of the conical hollow tapered portion 212 results in a significant reduction in resistance of the hollow tapered portion 212 to upward movement.
If the hollow iron ball 21 is a sphere-shaped contrast ball, the resistance to upward movement is high, which results in that it cannot move up and down rapidly under the same magnetic force.
Under the condition that the voltage is 36V and the maximum current is 10A, the hollow iron ball 21 can rapidly vibrate up and down, and finally the jet flow can change the flow speed at the frequency of 5 Hz.
Under the condition that the voltage is 36V and the maximum current is 10A, the comparison ball can vibrate up and down, and finally the jet flow can change the flow speed at the frequency of 1-2 Hz.
The taper angle of the hollow cone portion 212 is preferably 90 °; if the taper angle is too large, the resistance to upward movement increases; if the taper angle is too small, the resistance to upward movement is reduced, but the force of the fluid in the function chamber 16 against the hollow tapered portion 212 is also reduced, which is disadvantageous to rapid downward movement of the hollow iron ball 21.
Example 3
Based on the embodiment 2, as shown in fig. 2, 7 and 8, the flow rectification assembly comprises a flow breaking head 3 located between the second taper pipe 14 and the rotary suction cup 1, an L-shaped metal wire 4, a baffle 5 fixedly installed at the end of the metal wire 4, an air cylinder 7 for driving the metal wire 4 to perform translational reciprocating linear motion along a horizontal plane, and a limiting assembly 6 for limiting the moving range of the baffle 5, wherein the flow breaking head 3 comprises a hemispherical ball seat 32, and a conical taper head 31 is arranged at the top of the ball seat 32; the upper end of the metal wire 4 is fixedly connected with the bottom of the ball seat 32, and a piston rod of the air cylinder 7 is fixedly connected with the baffle 5; the limiting assembly 6 comprises a rotating roller 61, a plurality of blocking pieces 62 used for blocking the blocking pieces 5 are fixedly mounted on a roller body of the rotating roller 61, and the two adjacent blocking pieces 62 are arranged in a staggered mode.
In this embodiment, the stoppers 62 are preferably provided in five numbers.
The moving point positions of the cone head 31 are generally 5, which are located in the middle (collinear with the axis of the second cone 14), on the left side of the jet flow ejected by the second cone 14, on the right side of the jet flow ejected by the second cone 14, on the left side of the second cone 14, on the right side of the second cone 14, and the above 5 moving point positions are exactly corresponding to five baffles one by one. When the cylinder 7 is used for performing translational motion on the baffle 5, the baffle 5 stops moving when touching the stopper 62, and the current breaking head 3 is located at one of 5 moving points; the rotating roller 61 is driven to rotate by the stepping motor, so that the five stoppers 62 can be controlled to continuously alternate and be matched with the air cylinder 7, and the flow breaking head 3 can be controlled to reciprocate left and right below the second taper pipe 14 according to a set rule.
Since the operation of swinging the high-frequency pulse jet nozzle 10 as a whole is troublesome, and the smooth operation of the internal components thereof is also easily affected. Therefore, by controlling the flow breaking head 3 to reciprocate left and right below the second cone 14 according to a set rule, the flow breaking head 3 can break the jet flow ejected from the second cone 14, so that the jet flow forms an umbrella-like structure, which is beneficial to further improving the cleaning effect.
In order to ensure that the broken jet can form a large angle, as shown in fig. 6, the taper angle of the taper head 31 is α, and α is greater than or equal to 60 degrees and less than 90 degrees. Alpha, if too large, tends to cause splashing at the jet edge.
Example 4
Cleaning test
After ultraviolet positive photoresist is coated on the surface of a semiconductor wafer (such as a silicon carbide wafer), the semiconductor wafer is cleaned, and after the cleaning is finished, whether the semiconductor wafer is cleaned or not is detected by the following method:
after cleaning is finished, randomly selecting 5 points as test points, observing the particle residual quantity on the surface of the semiconductor wafer by adopting a metallographic microscope, wherein the average point number of the particle residual quantity is less than or equal to 30, namely, the cleaning is indicated, and the cleaning is qualified.
Test 1
In the method for cleaning the contaminated impurities of the semiconductor wafer in embodiment 3, the semiconductor wafer is cleaned by using a high-frequency pulse jet type rotary spray cleaning device, the rotating speed of the rotary sucker 1 is 1000r/min, deionized water enters the functional chamber 16 through the liquid inlet pipe 13, and finally a high-frequency pulse jet is ejected from the second taper pipe 14, the high-frequency pulse jet can change the flow speed at a frequency of 5Hz, the amplitude of the change of the flow speed is more than 1 m/s, and the pressure of fluid in the liquid inlet pipe 13 is 0.16 MPa; the rotating speed of the rotating roller 61 is 10 r/min; and after cleaning for 130s, the cleaning is finished, and the cleaning yield is more than 98.6%.
Test 2
The structural schematic diagram of the existing rotary spraying cleaning equipment is shown in fig. 1, the rotating speed of a rotary sucker 1 is 1000r/min, deionized water is sprayed out of a swing arm type nozzle 2, and the water pressure in the swing arm type nozzle 2 is 0.16 MPa; the qualification rate after 5min of cleaning is more than 98.5 percent.
As shown in the tests 1 and 2, the method for cleaning the semiconductor wafer by the contaminating impurities has an excellent cleaning effect on the photoresist film, shortens the cleaning time by 2.3 times, and remarkably improves the cleaning efficiency.
Test 3
Group G1: in the high frequency pulse jet nozzle 10 according to example 1, when the difference between the internal pressure and the external pressure of the first hose 124 is balanced, the outer wall of the first hose 124 is curved in a parabolic shape when viewed from the axial cross section of the first hose 124, and the inner wall of the first hose 124 is curved in a parabolic shape when viewed from the axial cross section of the first hose 124.
Group G2: the difference from group G1 is that the first hose 124 is of a cone configuration, which corresponds to the control nozzle Z1.
Group G3: the difference from group G1 is that the second hose 122 is of a cone configuration, which corresponds to the control nozzle Z2.
Group G4: the difference from group G1 is that the first hose 124 is of a cone configuration and the second hose 122 is of a cone configuration, which corresponds to the control nozzle Z3.
The high-frequency pulse jet type nozzle 10 and the comparison nozzles Z1-3 operate under the condition that the pressure of fluid in the liquid inlet pipe 13 is 0.16MPa, and the results are shown in Table 1:
TABLE 1
Therefore, the special structure of the first hose 124 and the second hose 122 enables the hoses to be easily deformed to the pneumatic cavity 15, so that the excess pressure at the functional chamber 16 is transferred to the pneumatic cavity 15, and the hollow iron ball 21 can vibrate up and down quickly.
Test 4
By controlling the frequency of the rapid vertical vibration of the hollow iron ball 21, the flow rate of the high-frequency pulse jet can be controlled to change with what frequency. Theoretically, the higher the frequency at which the high-frequency pulsed jet can shift the flow rate, the better the cleaning effect it brings. However, in the research, it is found that when the flow velocity of the high-frequency pulse jet is changed at a frequency of more than 10Hz, the deformation amplitudes of the first hose 124 and the second hose 122 become unstable due to too fast vibration at an excessive vibration frequency, and finally, the direct result is that when the flow velocity is changed at a frequency of more than 15Hz, the change amplitude of the flow velocity can only reach about 0.7 m/s; when the flow velocity is converted at a frequency of 11Hz or higher, the amplitude of the flow velocity conversion is 0.9-1 m/s. Therefore, the effect is best when the flow rate of the high-frequency pulse jet is changed at a frequency of 5-10 Hz or more.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A method for cleaning contaminated impurities of a semiconductor wafer is characterized by comprising the following steps: the high-frequency pulse jet type rotary spraying cleaning equipment is used for cleaning a semiconductor wafer and comprises a rotary sucker (1), a high-frequency pulse jet type nozzle (10) and a rectifying assembly for rectifying jet flow sprayed by the high-frequency pulse jet type nozzle (10).
2. A method as claimed in claim 1, wherein the cleaning method comprises: the high-frequency pulse jet nozzle (10) comprises a metal outer cylinder (11), an inner cylinder nozzle (12), an intermittent plugging component, a circular tube-shaped liquid inlet pipe (13), a second taper pipe (14), a safety air valve (17) and an air valve group (18), the upper end of the metal outer cylinder (11) is hermetically provided with a cylinder cover, the lower end of the metal outer cylinder (11) is provided with an inverted cone-shaped cylinder bottom (111), a first through hole (112) is arranged in the center of the cylinder bottom (111), a second through hole (115) is arranged in the center of the cylinder cover, the cylinder cover is also provided with two third through holes (113) respectively positioned at the left side and the right side of the second through hole (115) and two fourth through holes (114) respectively positioned at the left side and the right side of the second through hole (115), one end of each safety air valve (17) is communicated with the third through hole (113), and one end of each air valve group (18) is communicated with the fourth through hole (114); the inner cylinder nozzle (12) sequentially comprises a first hose (124), a round tube-shaped hard pipe (123), a second hose (122) and a first taper pipe (121) from top to bottom, the first hose (124), the round tube-shaped hard pipe (123), the second hose (122) and the first taper pipe (121) are communicated with each other, the lower end of the liquid inlet pipe (13) is communicated with the upper end of the first hose (124), the lower end of the first taper pipe (121) is communicated with the upper end of the second taper pipe (14), the inner wall of the second hose (122) is of an ellipsoidal structure, the taper angle of the first taper pipe (121) is larger than the taper angle of the second taper pipe (14), the inner diameter of the lower end of the second taper pipe (14) is smaller than the inner diameter of the upper end of the second taper pipe (14), and the inner diameter of the lower end of the first taper pipe (121) is smaller than the inner diameter of the upper end of the first taper pipe (121); the upper end of the liquid inlet pipe (13) is arranged above the metal outer cylinder (11), the first hose (124), the hard pipe (123) and the second hose (122) are all arranged inside the metal outer cylinder (11), the lower end of the second taper pipe (14) is arranged below the metal outer cylinder (11), an air pressure cavity (15) is arranged between the inner cylinder nozzle (12) and the metal outer cylinder (11), and a function chamber (16) is arranged inside the inner cylinder nozzle (12); the intermittent plugging assembly comprises a circular ring-shaped electromagnet (23) fixedly installed inside the hard pipe (123), a cylindrical spiral spring (22) and a hollow iron ball (21) used for plugging the lower end of the first conical pipe (121), the upper end of the cylindrical spiral spring (22) is fixedly connected with the electromagnet (23), and the lower end of the cylindrical spiral spring (22) is fixedly connected with the hollow iron ball (21); and a liquid inlet valve group (131) is arranged at the liquid inlet pipe (13).
3. A method as claimed in claim 2, wherein the cleaning method comprises: the rectifying assembly comprises a breaking head (3) positioned between a second conical pipe (14) and the rotary sucker (1), an L-shaped metal wire (4), a blocking piece (5) fixedly installed at the tail end of the metal wire (4), an air cylinder (7) used for driving the metal wire (4) to do translational reciprocating linear motion along the horizontal plane, and a limiting assembly (6) used for limiting the moving range of the blocking piece (5), wherein the breaking head (3) comprises a hemispherical ball seat (32), and the top of the ball seat (32) is provided with a conical head (31); the upper end of the metal wire (4) is fixedly connected with the bottom of the ball seat (32), and a piston rod of the air cylinder (7) is fixedly connected with the baffle plate (5); spacing subassembly (6) are including changeing roller (61), the roller body fixed mounting who changes roller (61) has a plurality of stoppers (62) that are used for blockking separation blade (5), is the setting of staggering between two adjacent stoppers (62).
4. A method as claimed in claim 3, wherein the cleaning method comprises: the cone angle of the cone head (31) is alpha, and alpha is more than or equal to 60 degrees and less than 90 degrees.
5. A method as claimed in claim 1, wherein the cleaning method comprises: when the difference between the internal pressure and the external pressure of the first hose (124) is balanced, the outer wall of the first hose (124) is curved to have a parabolic structure when cut by the axial section of the first hose (124), and the inner wall of the first hose (124) is curved to have a parabolic structure when cut by the axial section of the first hose (124).
6. A method as claimed in claim 3, wherein the cleaning method comprises: the anti-corrosion constant-pressure pump is connected to the liquid inlet pipe (13) in an external mode, the air valve group (18) is connected to the air pump in an external mode, the air valve group (18) is formed by connecting a one-way valve and an electromagnetic air valve in series, and the liquid inlet valve group (131) is formed by connecting an electromagnetic water valve and a check valve in series.
7. A method as claimed in claim 2, wherein the cleaning method comprises: the hollow iron ball (21) comprises a hemispherical hollow ball body (211) and a conical hollow cone part (212), the cone angle of the hollow cone part (212) is 90 degrees, and the tip of the hollow cone part (212) is fixedly connected with the lower end of the cylindrical spiral spring (22).
8. A method as claimed in claim 6, wherein the cleaning method comprises: when the high-frequency pulse jet type rotary spraying cleaning equipment is used for cleaning a photoresist film on the surface of a semiconductor wafer, the semiconductor wafer to be cleaned is placed at a rotary sucker (1), the rotating speed of the rotary sucker (1) is 1000r/min, a corrosion-resistant constant-pressure pump is used for conveying cleaning liquid to a liquid inlet pipe (13), an air valve group (18) is externally connected with an air pump, the cleaning liquid enters a functional chamber (16) through the liquid inlet pipe (13), and finally high-frequency pulse jet is sprayed out from a second conical pipe (14), the flow speed of the high-frequency pulse jet is converted at the frequency of 5Hz, the conversion amplitude of the flow speed is more than 1 m/s, and the pressure of fluid in the liquid inlet pipe (13) is 0.16 MPa; the rotating speed of the rotating roller (61) is 10 r/min; after cleaning for 130s, cleaning is complete.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210525169.3A CN114899086B (en) | 2022-05-15 | 2022-05-15 | Of a semiconductor wafer method for cleaning contaminated impurities |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210525169.3A CN114899086B (en) | 2022-05-15 | 2022-05-15 | Of a semiconductor wafer method for cleaning contaminated impurities |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114899086A true CN114899086A (en) | 2022-08-12 |
| CN114899086B CN114899086B (en) | 2023-03-24 |
Family
ID=82722832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210525169.3A Active CN114899086B (en) | 2022-05-15 | 2022-05-15 | Of a semiconductor wafer method for cleaning contaminated impurities |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114899086B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100015892A1 (en) * | 2008-07-16 | 2010-01-21 | Vln Advanced Technologies Inc. | Method and apparatus for prepping surfaces with a high-frequency forced pulsed waterjet |
| US20100140221A1 (en) * | 2008-12-09 | 2010-06-10 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
| CN206882008U (en) * | 2017-06-21 | 2018-01-16 | 江苏瑞尔隆鼎实业有限公司 | Ultrasonic resonator strong pulse jet spray head device |
| JP2018107338A (en) * | 2016-12-27 | 2018-07-05 | 株式会社Sumco | Cleaning method of wafer |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN112017999A (en) * | 2020-07-31 | 2020-12-01 | 中国科学院微电子研究所 | Wafer cleaning equipment and wafer cleaning method |
-
2022
- 2022-05-15 CN CN202210525169.3A patent/CN114899086B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100015892A1 (en) * | 2008-07-16 | 2010-01-21 | Vln Advanced Technologies Inc. | Method and apparatus for prepping surfaces with a high-frequency forced pulsed waterjet |
| US20100140221A1 (en) * | 2008-12-09 | 2010-06-10 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
| JP2018107338A (en) * | 2016-12-27 | 2018-07-05 | 株式会社Sumco | Cleaning method of wafer |
| CN206882008U (en) * | 2017-06-21 | 2018-01-16 | 江苏瑞尔隆鼎实业有限公司 | Ultrasonic resonator strong pulse jet spray head device |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN112017999A (en) * | 2020-07-31 | 2020-12-01 | 中国科学院微电子研究所 | Wafer cleaning equipment and wafer cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114899086B (en) | 2023-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI632001B (en) | Cleaning device for atomizing and spraying liquid in two-phase flow | |
| US7267130B2 (en) | Substrate processing apparatus | |
| US7479205B2 (en) | Substrate processing apparatus | |
| KR20130024746A (en) | Substrate processing apparatus, substrate processing method, and nozzle | |
| US20170271145A1 (en) | Method and an apparatus for cleaning substrates | |
| TWI738108B (en) | Spray device and cleaning equipment | |
| CN114899086B (en) | Of a semiconductor wafer method for cleaning contaminated impurities | |
| JP5825143B2 (en) | EDM machine | |
| JP2012015180A (en) | Two-fluid nozzle, substrate processing apparatus, method of generating liquid droplet, and substrate processing method | |
| JP2004202316A (en) | Two-fluid nozzle for cleaning and cleaning method | |
| WO1996041688A1 (en) | Method and apparatus for washing the inside of container | |
| JP2012035166A (en) | Fluid ejecting nozzle and washing device using the same | |
| CN110227753B (en) | Radial high-frequency vibration type cavitation micro-plasticity forming device | |
| CN113953254B (en) | Ultrasonic cleaning device and method for copper wires | |
| WO2019136890A1 (en) | Alternating pulse electromagnetic abrasive jet generation device | |
| CN206574674U (en) | Wafer cleaning device | |
| JP2007073610A (en) | Method and device for cleaning component | |
| JP5031542B2 (en) | Two-fluid nozzle, substrate cleaning apparatus and substrate cleaning method | |
| CN109013164B (en) | Spherical piston gas explosion fountain device and gas explosion injection method | |
| CN113144259A (en) | Atomization sterilization device for disease control center | |
| JP2010172993A (en) | Workpiece cutting method and wire saw | |
| CN206071498U (en) | Pulsed negative pressure vibratory equipment | |
| CN116474966A (en) | Magnetic suspension atomizing spray head and use method thereof | |
| KR102622210B1 (en) | Cleaning apparatus | |
| KR102089380B1 (en) | Nano bubble spray structure applied to wafer cleaning |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230220 Address after: 201900 No. 181, Shanlian Road, Baoshan City Industrial Park, Baoshan District, Shanghai Applicant after: Shanghai Shenhe Investment Co.,Ltd. Address before: 241000 xiahu Road, Linjiang Industrial Park, economic development zone, Sanshan District, Wuhu City, Anhui Province Applicant before: ANHUI SUNMIRO AGRICULTURAL TECHNOLOGY Co.,Ltd. Applicant before: Shanghai Shenhe Investment Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230705 Address after: No. 21, Nanhai Road, Yi'an District, Tongling City, Anhui Province 244151 Patentee after: Anhui fulede Changjiang semiconductor material Co.,Ltd. Address before: 201900 No. 181, Shanlian Road, Baoshan City Industrial Park, Baoshan District, Shanghai Patentee before: Shanghai Shenhe Investment Co.,Ltd. |
|
| TR01 | Transfer of patent right |