CN114892144A - Atomization-assisted CVD reaction cavity - Google Patents
Atomization-assisted CVD reaction cavity Download PDFInfo
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- CN114892144A CN114892144A CN202210391451.7A CN202210391451A CN114892144A CN 114892144 A CN114892144 A CN 114892144A CN 202210391451 A CN202210391451 A CN 202210391451A CN 114892144 A CN114892144 A CN 114892144A
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The invention discloses an atomization auxiliary CVD reaction cavity, which comprises a cavity, wherein the cavity is formed by bonding a cavity bottom plate, a cavity front cover plate, a cavity rear cover plate and a reaction zone cover plate, the reaction zone cover plate is arranged between the cavity front cover plate and the cavity rear cover plate, a substrate template can be conveniently placed in a high-temperature reaction zone in the cavity by arranging the reaction zone cover plate, the cavity bottom plate, the cavity front cover plate, the cavity rear cover plate and the reaction zone cover plate are all made of quartz materials, a plurality of thermocouples are arranged below the high-temperature reaction zone corresponding to the cavity, the inlet end of the cavity is communicated with a buffer cavity, and a water cooling device is arranged at a position close to the inlet end of the cavity. The reaction cavity is made of quartz materials, the high-temperature reaction area is transparent, the details of the reaction area can be directly observed, the introduction of light radiation in the thin film growth area can be conveniently realized, the discussion of a film forming mechanism is facilitated, and the method is also a technical means for process optimization.
Description
Technical Field
The invention relates to the technical field of film preparation, in particular to an atomization auxiliary CVD reaction cavity.
Background
Chemical Vapor Deposition (CVD) is a thin film preparation method widely used in thin film preparation, especially in the semiconductor industry. The CVD method is a general term for a large class of thin film production methods, and is basically characterized in that a gas-phase or vapor-phase source substance chemically reacts on a hot solid surface or a near-surface region to form a thin film material, and there are several dozen specific CVD methods according to different classifications. New CVD methods and apparatus are also continually being produced. The atomization-assisted CVD method is a novel CVD technology which has been developed for decades and has attracted general attention in recent years, and a large number of published research documents show that the method is very suitable for preparing electronic-grade high-quality single crystal films, in particular gallium oxide and zinc oxide materials. The most prominent advantages of the atomization-assisted CVD are that the operation is carried out under normal pressure, vacuum equipment is not needed, and compared with the mainstream MOCVD technology in the semiconductor industry at present, the energy consumption cost can be reduced by more than 50 percent.
In the CVD technology, the design of a reaction cavity is a key, and no matter scientific research or production, an excellent CVD cavity is an important guarantee for outputting high-quality samples, and atomization-assisted CVD is no exception. However, at present, detailed mechanisms for film growth, including mass transport, energy transport, chemical reaction power train for film growth, etc., are not clear, and a great deal of experimental and theoretical research work is still carried out because the principle of optimal cavity design and optimal cavity parameters cannot be given from a theoretical perspective. In experimental research, in order to further explore the mechanism of film growth, it is necessary to continuously adjust and optimize the environment in the chamber. If each adjustment requires the fabrication of a new cavity, it is uneconomical from a financial and time standpoint. Moreover, the customized processing cannot ensure the stability and repeatability of the processing process, so that the reliability of the comparative analysis of the generated experimental data is reduced, and even the significance of the comparative analysis is completely lost.
It is therefore necessary to design and fabricate a reusable chamber for exploring the mechanism of thin film growth.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides an atomization auxiliary CVD reaction cavity to solve the problems in the prior art.
In order to achieve the above purpose, the invention provides the following technical scheme:
the utility model provides an atomizing auxiliary CVD reaction cavity, includes the cavity, and this cavity is formed after bonding by cavity bottom plate, cavity protecgulum, cavity back shroud and reaction zone apron, and this reaction zone apron is established between cavity protecgulum and the cavity back shroud, the setting of reaction zone apron can conveniently be placed the substrate template high temperature reaction district in the cavity, cavity bottom plate, cavity protecgulum, cavity back shroud and reaction zone apron all adopt the quartz material to make, are corresponding the below position in the high temperature reaction district of cavity is equipped with a plurality of thermocouples, the entrance point and the cushion chamber intercommunication of cavity, and still be equipped with water cooling plant near its entrance point's position, the exit end of cavity is exhaust outlet.
Preferably, special-shaped side strips are arranged on the chamber bottom plate and located on two sides of the chamber bottom plate respectively, V-shaped grooves are distributed on one sides, facing the chamber bottom plate, of the special-shaped side strips, high-temperature glue is filled in the V-shaped grooves to achieve bonding with the chamber bottom plate, and the other sides of the special-shaped side strips are bonded with the chamber front cover plate, the chamber rear cover plate and the reaction zone cover plate which are located in corresponding positions.
By the arrangement, the structural stability of the cavity can be enhanced, and the air tightness of the joint can be improved.
Preferably, a first side edge filling block is embedded in the position, corresponding to the high-temperature reaction zone, of the special-shaped side edge strip.
The high-temperature reaction zone can deposit the film together with the side edge area in the experimental process and further pollute the special-shaped side edge strip, so that the first side edge filling block is embedded in the area, and the pollution of the deposited film to the special-shaped side edge strip is reduced.
Preferably, a second side edge filling block is embedded in a position, corresponding to the tail gas conveying area, on the special-shaped side edge strip, the second side edge filling block is of a trapezoidal structure, precursor liquid aerosol condensed into liquid drops is conveniently drained to the middle of the cavity, and corrosion of a junction of the special-shaped side edge strip and the cavity bottom plate is reduced.
So set up, precursor liquid aerosol can condense to drop corrosion dysmorphism side strip and cavity bottom plate juncture when the high temperature reaction zone gets into low temperature tail gas transport zone in the experiment, then low temperature tail gas transport zone embedding second side filling block in dysmorphism side strip, the condensate droplet hangs part on the cavity inner space usually, then drip naturally via the action of gravity, the trapezoidal structure design of second side filling block makes things convenient for the droplet to assemble in the middle of cavity or cavity bottom plate, the spatial distance between dysmorphism side strip and cavity bottom plate juncture and the droplet has been increased, improve cavity life.
Preferably, the reaction zone cover plate comprises a reaction zone upper cover plate and a flow field modulation wedge bonded below the reaction zone upper cover plate, the wedge point of the flow field modulation wedge faces the inlet end of the chamber, the length of the reaction zone upper cover plate is greater than that of the flow field modulation wedge, and two ends of the reaction zone upper cover plate are bonded with a chamber front cover plate and a chamber rear cover plate at corresponding ends respectively.
By the arrangement, the reaction zone cover plate is connected with the cavity front cover plate and the cavity rear cover plate in a bonding mode, so that the disassembly and assembly are convenient; the flow field modulation wedge can effectively regulate and control the deposition position of the precursor liquid aerosol, and has the convergence effect on the precursor liquid aerosol along the direction of the flow field modulation wedge, so that the deposition efficiency is improved, meanwhile, the flow field modulation wedge is also bonded on the upper cover plate of the reaction zone, the replacement of different flow field modulation wedges is convenient, and the research on the influence of different wedge angles on the airflow field and the film structure can be quickly realized.
Preferably, airtight grooves are distributed on the upper cover plate of the reaction zone and are bonded with the front cover plate and the rear cover plate of the cavity, and high-temperature glue is filled in the airtight grooves to improve the airtightness of a joint.
Preferably, the distance between the bottom surface of the flow field modulation wedge and the upper surface of the substrate template is 1.1-1.3 mm.
The laminar flow can be stably maintained in the distance range, and a sample with better quality can be successfully prepared.
Preferably, the thermocouple is fixed below the chamber bottom plate through a thermocouple temperature measuring end fixing piece and a thermocouple wire harness fixing piece.
Preferably, the lower end face of the chamber bottom plate is provided with an inward concave groove, and the thermocouple temperature measuring end fixing piece and the thermocouple wire harness fixing piece are embedded in the groove.
Compared with the prior art, the invention has the beneficial effects that:
(1) the reaction cavity is made of quartz, the high-temperature reaction area is transparent, the details of the reaction area can be directly observed, the introduction of light radiation in the thin film growth area can be conveniently realized, the discussion of a film forming mechanism is facilitated, and the technical means of process optimization is also provided;
(2) the cavity is formed by bonding a cavity bottom plate, a cavity front cover plate, a cavity rear cover plate and a reaction area cover plate, samples are conveniently taken and placed through the installation and the disassembly of the reaction area cover plate, the substrate template is also conveniently replaced, the deposition reaction of different substrate templates can be adapted, the application range is wide, and the reusability is also improved;
(3) the water cooling module is designed, so that the cavity temperature of the water cooling module area is close to the room temperature, the transport characteristic of the liquid aerosol in the space from the buffer cavity to the deposition reaction high-temperature area is optimized, the service life of liquid aerosol particles is regulated and controlled, and the stability of technological parameters of film deposition and the repeatability of film properties are improved;
(4) the flow field modulation wedge provided by the scheme is combined with the upper cover plate of the reaction zone in a bonding mode, the flow field modulation wedge is convenient to disassemble and replace, and the research on the influence of different wedge angles on an airflow field and a film structure can be realized.
Description of the drawings:
FIG. 1 is a top view of the present invention;
FIG. 2 is a bottom view of FIG. 1;
FIG. 3 is an internal cross-sectional view of FIG. 1;
FIG. 4 is a cross-sectional view A-A of FIG. 1;
FIG. 5 is a cross-sectional view taken along line B-B of FIG. 1;
FIG. 6 is a schematic view of the reaction zone cover plate of FIG. 1;
fig. 7 is a structural view of a thermocouple harness fixing piece in fig. 1.
Detailed Description
The present invention will be described in further detail with reference to test examples and specific embodiments. It should be understood that the scope of the above-described subject matter is not limited to the following examples, and any techniques implemented based on the disclosure of the present invention are within the scope of the present invention.
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
In the description of the present invention, unless otherwise specified and limited, it is to be noted that the terms "mounted," "connected," and "connected" are to be interpreted broadly, and may be, for example, a mechanical connection or an electrical connection, a communication between two elements, a direct connection, or an indirect connection via an intermediate medium, and specific meanings of the terms may be understood by those skilled in the art according to specific situations.
An atomization auxiliary CVD reaction cavity as shown in attached figures 1-7, which comprises a cavity 1, the cavity 1 is formed by bonding a cavity bottom plate 11, a cavity front cover plate 12, a cavity rear cover plate 13 and a reaction zone cover plate 2, the bonded cavity 1 is of a horizontal rectangular cavity structure and is sequentially divided into a low-temperature conveying zone, a high-temperature reaction zone and a tail gas conveying zone from front to back, the reaction zone cover plate 2 is arranged between the cavity front cover plate 12 and the cavity rear cover plate 13 and can be disassembled, a substrate template 3 can be conveniently placed in the high-temperature reaction zone in the cavity 1 through disassembly, a heating mechanism is arranged at the position corresponding to the reaction zone cover plate 2 in the experimental process to form the high-temperature reaction zone, the cavity bottom plate 11, the cavity front cover plate 12, the cavity rear cover plate 13 and the reaction zone cover plate 2 are all made of quartz materials, the inlet end of the cavity 1 is communicated with a buffer cavity 5, and a water cooling device 4 is also arranged at the position close to the inlet end, the water cooling device 4 is connected with a water pump through a pipeline, and the water pump drives cooling water close to room temperature to circularly flow, so that the chamber temperature of the water cooling device 4 area is close to the room temperature, and the precursor liquid aerosol is prevented from being excessively lost in a low-temperature transport area. The exit end of chamber 1 is tail gas exhaust port, and the exit end and the entrance point of chamber 1 are similar, all contain brass metal mounting and rubber gas tight packing ring, extrude to make its deformation rubber gas tight packing ring through brass metal mounting, reach good airtight effect. The buffer cavity 5 is a cylindrical cavity, so that the uniformity and stability of the airflow of the precursor liquid aerosol are ensured, and the precursor liquid aerosol particles with the same diameter can be screened out and enter the cavity 1.
The high-temperature reaction area of the cavity is transparent, can be used for directly observing the details of the reaction area, can conveniently realize the introduction of light radiation in the thin film growth area, such as ultraviolet light introduction, has strong chemical activity, is not only beneficial to discussing a film forming mechanism, but also is a possible technical means for process optimization.
As can be seen from fig. 5 and fig. 3, the reaction area cover plate 2 includes a reaction area upper cover plate 21 and a flow field modulation wedge 23 bonded below the reaction area upper cover plate 21, a wedge 24 of the flow field modulation wedge 23 faces an inlet end of the chamber 1, precursor liquid aerosol in the high-temperature reaction area is generally modulated by a flow field, a gravity field and a temperature field, deposition effect and deposition position are difficult to be effectively controlled, the flow field modulation wedge 23 can effectively regulate and control deposition position of the precursor liquid aerosol, and the precursor liquid aerosol is subjected to a convergence effect along the wedge direction, so that deposition efficiency is improved. In the experiment, the flow field of the precursor liquid aerosol is required to be laminar flow, so that vortex is avoided. The thickness of the flow field modulation wedge 23 is designed to be 4.5mm, the inclination angle of the wedge 24 is designed to be 10 degrees, the distance between the bottom end of the flow field modulation wedge 23 and the upper surface of the substrate template 3 is 0.8-1.5mm, preferably 1.2mm, and experimental results show that laminar flow can be stably maintained under the thickness design, samples with good quality can be successfully prepared, and thickness and angle parameters can be improved according to actual requirements.
The length of the reaction zone upper cover plate 21 is greater than that of the flow field modulation wedge 23, and two ends of the reaction zone upper cover plate 21 extend out of the flow field modulation wedge 23, and two ends of the reaction zone upper cover plate 21 are respectively bonded with the cavity front cover plate 12 and the cavity rear cover plate 13 at the corresponding ends. Airtight grooves 22 are distributed on the upper cover plate 21 of the reaction zone and are bonded with the front cover plate 12 and the rear cover plate 13 of the cavity, high-temperature glue is filled before the experiment starts, the cover plate of the reaction zone is covered, and the airtightness of the joint is further improved. The front and back sides of the reaction zone upper cover plate 21 are designed with 45-degree oblique planes, when the reaction zone upper cover plate 21 is disassembled, the reaction zone upper cover plate 21 can be taken out more easily by applying acting force along the cutting direction, and reusability of the reaction zone upper cover plate 21 is realized. Meanwhile, the reaction area cover plate 2 is arranged in a bonding mode, so that the sample taking and placing and the flow field changing modulation wedge 23 are convenient.
The both sides of 11 upper surfaces of cavity bottom plate are glued through high temperature and are connected special-shaped side strake 7 respectively, because special-shaped side strake 7 compares in comparing with 11 junctures of cavity bottom plate and receives the corruption more easily with 12, 13 junctures of cavity back shroud, then design V type groove 71 at special- shaped side strake 7 and 11 junctures of cavity bottom plate, pack high temperature in V type groove 71 and glue for strengthen cavity 1's structural stability, improve the junction gas tightness. The surface of the special-shaped side edge strip 7 opposite to the V-shaped groove opening 71 is respectively bonded with the front cover plate 12 of the cavity, the rear cover plate 13 of the cavity and the reaction zone cover plate 2 through high-temperature glue. Precursor liquid aerosol can condense into liquid drop corrosion dysmorphism side strake 7 and 11 junctions of cavity bottom plate when the high temperature reaction zone gets into tail gas transport zone in the experiment, so lie in tail gas transport zone's position department embedding second side filling block 9 in dysmorphism side strake 7, this second side filling block 9 is the trapezium structure, the condensate droplet hangs the upper portion space in cavity 1 usually, drip naturally via the action of gravity, trapezium structure's second side filling block 9 can conveniently be with the precursor liquid aerosol drainage to the cavity 1 of condensation for the liquid drop, to the middle gathering liquid drop and increase the space distance between dysmorphism side strake 7 and 11 junctions of cavity bottom plate and the liquid drop in the cavity 1, reduce the corruption to dysmorphism side strake 7 and 11 junctions of cavity bottom plate, improve cavity 1 life. The high-temperature reaction zone is a film deposition zone, and the phenomenon of the film deposition zone can be continuously and clearly observed in experiments. However, in the experimental process, the high-temperature reaction zone and the side edge zone can deposit films together and then pollute the special-shaped side edge strips 7, so that the first side edge filling blocks 8 are embedded in the high-temperature reaction zone and the low-temperature conveying zone of the special-shaped side edge strips 7, the polluted special-shaped side edge strips can be conveniently replaced, the experimental requirements are met, and the loss degree of the overall structure of the chamber 1 is reduced.
A plurality of thermocouples are arranged below the high temperature reaction zone corresponding to the chamber 1, and the thermocouples are fixed below the chamber bottom plate 11 by a thermocouple temperature measuring end fixing piece 62 and a thermocouple wire harness fixing piece 61.
Specifically, the lower end face of the cavity bottom plate 11 is provided with an inward concave groove, the thermocouple temperature measuring end fixing piece 62 and the thermocouple wire harness fixing piece 61 are embedded in the groove, for improving the stability between the thermocouple temperature measuring end fixing piece 62 and the thermocouple wire harness fixing piece 61 and the cavity bottom plate 11, the inner surface of the groove is subjected to rough passivation treatment, the high heat conducting plate 63 is embedded in the groove close to one side of the water cooling device, the high heat conducting plate 63 is arranged below the low-temperature transportation area and is used for connecting the cavity bottom plate 11 and the water cooling device 4, heat energy is conducted to the water cooling device 4 through the high heat conducting plate 63 more quickly, and therefore the loss of the precursor liquid aerosol in the low-temperature transportation area is reduced.
As can be seen from fig. 7, the wire harness fixing piece 61 is distributed with wire harness fixing grooves 611, in order to improve the reusability of the parts of the chamber 1, 45 ° inclined planes 612 are designed on the two side edges of the thermocouple wire harness fixing piece 61 and the thermocouple temperature measuring end fixing piece 62, when the fixing pieces are disassembled, acting force is applied by following the cutting direction, so that the fixing pieces can be disassembled more easily, and the reusability of the parts of the chamber is realized.
The position of the thermocouple temperature measuring end fixing piece 62 is extremely important in the experiment. According to the analysis and design of the actual experiment results, when the three thermocouple temperature measuring end fixing pieces 62 are respectively designed at the lower front part, the lower part and the lower rear part of the position of the flow field modulation wedge 23, the actual temperature of the thin film deposition area of the high-temperature reaction area can be more accurately and comprehensively reflected, and the number of the thermocouples and the temperature measuring end fixing pieces can be increased according to the specific requirements. The low-temperature transport region is the transport end of the precursor liquid aerosol, but the precursor liquid aerosol starts to evaporate in the low-temperature transport region due to the temperature field of the high-temperature reaction region.
The substrate template 3 is arranged on the chamber bottom plate 11, the c-plane sapphire substrate is embedded in the substrate template 3, and the substrate placement area is arranged below the flow field modulation wedge 23. Since the deposition of the thin film in the high temperature reaction region is performed simultaneously in the experiment, the high temperature reaction region on the upper surface of the chamber bottom plate 11 is gradually contaminated due to the deposition of the thin film. Therefore, the substrate template 3 can replace the upper surface of the chamber bottom plate 11 to bear pollution, and the substrate template 3 is replaced through the reaction area cover plate 2 area, so that the continuous and long-term use of the chamber 1 is realized. In the experiment, the prepared film is required to be a two-dimensional material, and the film cannot be deposited on the side edge of the c-plane sapphire substrate. The substrate template 3 replaces the function of a pre-substrate, so that the surface of the c-plane sapphire substrate is smoothly jointed with the surface of the substrate template 3, and the preparation requirement of the two-dimensional film material is met. Or an electrode (the lower surface of the substrate template 3 and the surface of the flow field modulation wedge facing the sample) can be arranged in the high-temperature reaction region, so that the electric field loading of the thin film deposition region is realized.
The device comprises the following operation steps:
step 1: respectively ultrasonically cleaning a substrate template 3, a c-plane sapphire substrate, a first side edge filling block 8 and a second side edge filling block 9 for 10 minutes by using deionized water, acetone, ethanol and deionized water, and drying by using nitrogen;
step 2: opening a reaction area cover plate 2, respectively installing a first side edge filling block 8 and a second side edge filling block 9 in a high-temperature reaction area and a tail gas conveying area, installing a c-plane sapphire substrate in a substrate placing area of a substrate template 3, installing the substrate template 3 in the high-temperature reaction area in a cavity 1, and locating the substrate template placing area below the position of a flow field modulation wedge 23;
and step 3: coating a layer of high-temperature glue in the airtight groove of the reaction zone cover plate 2, and covering the reaction zone cover plate 2 on the high-temperature reaction zone of the chamber 1;
and 4, step 4: deposition reaction is carried out, and relevant data are observed and recorded.
The foregoing describes preferred embodiments of the present invention. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (9)
1. An atomizing auxiliary CVD reaction cavity is characterized in that: comprises a chamber (1), the chamber (1) is formed by bonding a chamber bottom plate (11), a chamber front cover plate (12), a chamber rear cover plate (13) and a reaction zone cover plate (2), the reaction zone cover plate (2) is arranged between the chamber front cover plate (12) and the chamber rear cover plate (13), the reaction zone cover plate (2) is arranged to facilitate the placement of the substrate template (3) in the high temperature reaction zone of the chamber (1), the chamber bottom plate (11), the chamber front cover plate (12), the chamber rear cover plate (13) and the reaction area cover plate (2) are all made of quartz materials, a plurality of thermocouples are arranged at the lower position corresponding to the high-temperature reaction zone of the chamber (1), the inlet end of the chamber (1) is communicated with the buffer cavity (5), and a water cooling device (4) is arranged at a position close to the inlet end of the chamber, and the outlet end of the chamber (1) is a tail gas discharge port.
2. The atomization-assisted CVD reaction chamber of claim 1, wherein: the special-shaped side strips (7) are arranged at positions, located on two sides of the cavity bottom plate (11), of the cavity bottom plate (11) respectively, the special-shaped side strips (7) face towards one side of the cavity bottom plate (11) and are distributed with V-shaped grooves (71), high-temperature glue is filled in the V-shaped grooves (71), the special-shaped side strips are bonded with the cavity bottom plate (11), and the other side of the special-shaped side strips (7) is bonded with the cavity front cover plate (12), the cavity rear cover plate (13) and the reaction area cover plate (2) in corresponding positions.
3. The atomization-assisted CVD reaction chamber of claim 2, wherein: and a first side edge filling block (8) is embedded in the position, corresponding to the high-temperature reaction zone, of the special-shaped side edge strip (7).
4. The atomization-assisted CVD reaction chamber of claim 2, wherein: the position that corresponds tail gas transport area on dysmorphism side strake (7) inlays and is equipped with second side filling block (9), and this second side filling block (9) are the trapezium structure, and the convenient precursor liquid aerosol that will condense for the liquid drop drains to the middle part of cavity (1), and the reduction is right the corruption of dysmorphism side strake (7) and cavity bottom plate (11) juncture.
5. The atomization-assisted CVD reaction chamber of claim 1, wherein: the reaction zone cover plate (2) comprises a reaction zone upper cover plate (21) and a flow field modulation wedge (23) bonded below the reaction zone upper cover plate (21), a wedge tip (24) of the flow field modulation wedge (23) faces towards the inlet end of the cavity (1), the length of the reaction zone upper cover plate (21) is greater than that of the flow field modulation wedge (23), and two ends of the reaction zone upper cover plate (21) are bonded with a cavity front cover plate (12) and a cavity rear cover plate (13) at corresponding ends respectively.
6. The atomization-assisted CVD reaction chamber of claim 5, wherein: airtight grooves (22) are distributed in the positions, bonded with the cavity front cover plate (12) and the cavity rear cover plate (13), of the reaction area upper cover plate (21), and high-temperature glue is filled in the airtight grooves (22) to improve the airtightness of a joint.
7. The atomizing-assisted CVD reaction chamber of claim 6, wherein: the distance between the bottom surface of the flow field modulation wedge (23) and the upper surface of the substrate template (3) is 0.8-1.5 mm.
8. The atomization-assisted CVD reaction chamber of claim 1, wherein: the thermocouple is fixed below the chamber bottom plate (11) through a thermocouple temperature measuring end fixing piece (62) and a thermocouple wire harness fixing piece (61).
9. The atomization-assisted CVD reaction chamber of claim 8, wherein: the lower end face of the chamber bottom plate (11) is provided with an inward concave groove, and the thermocouple temperature measuring end fixing piece (62) and the thermocouple wire harness fixing piece (61) are embedded in the groove.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6013319A (en) * | 1998-04-28 | 2000-01-11 | Dietze; Gerald R. | Method and apparatus for increasing deposition quality of a chemical vapor deposition system |
| WO2000049199A1 (en) * | 1999-02-19 | 2000-08-24 | Gt Equipment Technologies Inc. | Method and apparatus for chemical vapor deposition of polysilicon |
| KR20090058769A (en) * | 2007-12-05 | 2009-06-10 | 삼성전기주식회사 | Chemical vapor deposition apparatus |
| WO2012099635A2 (en) * | 2010-10-28 | 2012-07-26 | President And Fellows Of Harvard College | Electron beam processing with condensed ice |
| CN103466955A (en) * | 2013-08-20 | 2013-12-25 | 秦皇岛玻璃工业研究设计院 | Manufacturing method for anti-reflection glass and coating equipment for implementation of manufacturing method |
| CN108796473A (en) * | 2018-06-26 | 2018-11-13 | 重庆理工大学 | A kind of thermal decomposition preparation method of film |
| CN109440083A (en) * | 2018-12-25 | 2019-03-08 | 重庆理工大学 | It is atomized assisted CVD membrane deposition method |
| CN209276641U (en) * | 2018-12-25 | 2019-08-20 | 重庆理工大学 | Buffer mixing chamber |
| CN112111783A (en) * | 2020-10-14 | 2020-12-22 | 天津工业大学 | Electrostatic atomization chemical vapor deposition gallium oxide film system |
| CN113846313A (en) * | 2021-09-15 | 2021-12-28 | 绍兴文理学院 | Atomization auxiliary CVD device |
| CN113862640A (en) * | 2021-09-16 | 2021-12-31 | 绍兴文理学院 | Atomizing auxiliary CVD's exhaust emission purifier |
-
2022
- 2022-04-14 CN CN202210391451.7A patent/CN114892144B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6013319A (en) * | 1998-04-28 | 2000-01-11 | Dietze; Gerald R. | Method and apparatus for increasing deposition quality of a chemical vapor deposition system |
| WO2000049199A1 (en) * | 1999-02-19 | 2000-08-24 | Gt Equipment Technologies Inc. | Method and apparatus for chemical vapor deposition of polysilicon |
| KR20090058769A (en) * | 2007-12-05 | 2009-06-10 | 삼성전기주식회사 | Chemical vapor deposition apparatus |
| WO2012099635A2 (en) * | 2010-10-28 | 2012-07-26 | President And Fellows Of Harvard College | Electron beam processing with condensed ice |
| CN103466955A (en) * | 2013-08-20 | 2013-12-25 | 秦皇岛玻璃工业研究设计院 | Manufacturing method for anti-reflection glass and coating equipment for implementation of manufacturing method |
| CN108796473A (en) * | 2018-06-26 | 2018-11-13 | 重庆理工大学 | A kind of thermal decomposition preparation method of film |
| CN109440083A (en) * | 2018-12-25 | 2019-03-08 | 重庆理工大学 | It is atomized assisted CVD membrane deposition method |
| CN209276641U (en) * | 2018-12-25 | 2019-08-20 | 重庆理工大学 | Buffer mixing chamber |
| CN112111783A (en) * | 2020-10-14 | 2020-12-22 | 天津工业大学 | Electrostatic atomization chemical vapor deposition gallium oxide film system |
| CN113846313A (en) * | 2021-09-15 | 2021-12-28 | 绍兴文理学院 | Atomization auxiliary CVD device |
| CN113862640A (en) * | 2021-09-16 | 2021-12-31 | 绍兴文理学院 | Atomizing auxiliary CVD's exhaust emission purifier |
Non-Patent Citations (1)
| Title |
|---|
| 蔡健栋;李健;王钢;范冰丰;: "多孔介质在PECVD应用的仿真研究", 机械设计与制造, no. 05 * |
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