CN114883507A - Organic light-emitting device, manufacturing method of organic light-emitting device and display panel - Google Patents

Organic light-emitting device, manufacturing method of organic light-emitting device and display panel Download PDF

Info

Publication number
CN114883507A
CN114883507A CN202210491932.5A CN202210491932A CN114883507A CN 114883507 A CN114883507 A CN 114883507A CN 202210491932 A CN202210491932 A CN 202210491932A CN 114883507 A CN114883507 A CN 114883507A
Authority
CN
China
Prior art keywords
layer
organic light
light emitting
emitting device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210491932.5A
Other languages
Chinese (zh)
Inventor
汪国杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN202210491932.5A priority Critical patent/CN114883507A/en
Publication of CN114883507A publication Critical patent/CN114883507A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used

Abstract

The application provides an organic light-emitting device, a manufacturing method of the organic light-emitting device and a display panel, wherein the organic light-emitting device comprises: the organic light-emitting device comprises a first electrode layer, an organic light-emitting layer, a first carrier transmission layer and a second electrode layer, and further comprises a first solvent isolation layer arranged between the organic light-emitting layer and the first carrier transmission layer. This application is through setting up first solvent isolation layer between organic light emitting layer and the first carrier transmission layer at organic light emitting device, can avoid adopting the mutual solution problem between the solvent of organic light emitting layer and the solvent of first carrier transmission layer that exists when adopting ink jet printing preparation organic light emitting layer and first carrier transmission layer from this, avoid causing destruction to organic light emitting layer or first carrier transmission layer, the yield of the organic light emitting device that the ink jet printing process formed has been improved from this, thereby be favorable to reducing production cost.

Description

Organic light-emitting device, manufacturing method of organic light-emitting device and display panel
Technical Field
The present disclosure relates to the field of display devices, and particularly to an organic light emitting device, a method for manufacturing the organic light emitting device, and a display panel
Background
According to the ink-jet printing OLED technology, after organic functional materials are prepared into ink, the ink is accurately controlled to be dripped into the pixel pits dropwise in an ink-jet printing mode, the materials can be utilized to the maximum extent, high-resolution is realized by fine metal masks without high-vacuum evaporation equipment, the cost is effectively reduced, and the method has great advantages in the aspect of preparing large-size OLED panels.
The structure of the ink-jet printing OLED device is generally a multi-organic-layer structure, a hole injection layer, a hole transport layer and an organic light-emitting layer are prepared on an anode in a layer-by-layer printing mode, and then an electron transport layer and a cathode are prepared. Because the organic material is coated in solution, the organic layer and the adjacent film layer, such as the electron transport layer, are mutually soluble, so that the printing preparation of the organic electron transport layer cannot be effectively realized at present. Most of the materials of the organic light-emitting layer and the electron transport layer can be dissolved in the same solvent at present, so that the solvent of the organic light-emitting layer is difficult to avoid being damaged when the ink of the electron transport layer is printed.
Disclosure of Invention
The application provides an organic light-emitting device, a manufacturing method of the organic light-emitting device and a display panel, which aim to solve the problem that a film layer solvent in the organic light-emitting device is easy to damage.
In one aspect, the present application provides an organic light emitting device, including a first electrode layer, an organic light emitting layer, a first carrier transport layer, and a second electrode layer, the organic light emitting device further including:
and the first solvent isolation layer is arranged between the organic light-emitting layer and the first carrier transport layer.
In one possible implementation manner of the present application, the first solvent isolation layer is made of a metal semiconductor material.
In one possible implementation manner of the present application, the first electrode layer is an anode, the first carrier transport layer is a hole transport layer, the second electrode layer is a cathode, and the first solvent isolation layer is made of a P-type metal semiconductor material.
In one possible implementation manner of the present application, the first electrode layer is a cathode, the first carrier transport layer is an electron transport layer, the second electrode layer is an anode, and the first solvent isolation layer is made of an N-type metal semiconductor material.
In one possible implementation manner of the present application, the organic light emitting device further includes:
a second carrier transport layer disposed between the organic light emitting layer and the second electrode layer;
and the second solvent isolation layer is arranged between the organic light-emitting layer and the second carrier transmission layer and is made of a P-type metal semiconductor material.
In one possible implementation manner of the present application, the second electrode layer includes:
the organic light emitting diode comprises a connecting electrode and an auxiliary electrode, wherein the auxiliary electrode and the connecting electrode are arranged at intervals on the same layer, the organic light emitting layer is arranged on the connecting electrode and the auxiliary electrode, and the length of the connecting electrode is greater than that of the auxiliary electrode.
A method of fabricating an organic light emitting device, comprising:
forming a first electrode layer by adopting a sputtering coating process;
forming an organic light-emitting layer on the first electrode layer by adopting an ink-jet printing process;
forming a first solvent isolation layer on the organic light-emitting layer by adopting a sputtering coating process;
preparing a first carrier transmission layer on the first solvent isolation layer by adopting an ink-jet printing process;
and forming a second electrode layer on the first current carrier transmission layer by adopting a sputtering coating process.
In one possible implementation manner of the present application, in the step of forming the first solvent isolation layer on the organic light emitting layer by using a sputtering coating process, a vacuum degree in a sputtering chamber in the sputtering coating process is 0.5 to 3.5 × 10 - 2 mTorr, process gas flow of 15-20sccm, power of 50W-60W.
In one possible implementation manner of the present application, before the step of forming the organic light emitting layer on the first electrode layer by using an inkjet printing process, the method further includes:
forming a second carrier transmission layer on the first electrode layer by adopting an ink-jet printing process;
forming a second solvent isolation layer on the second carrier transmission layer by adopting a sputtering coating process;
and preparing the organic light-emitting layer on the second solvent isolation layer by adopting an ink-jet printing process.
A display panel includes the organic light emitting device.
On the other hand, the application also provides a display panel comprising the display panel.
The application provides an organic light emitting device, a manufacturing method of the organic light emitting device and a display panel, through setting up a first solvent isolation layer between an organic light emitting layer of the organic light emitting device and a first carrier transmission layer, can avoid the mutual solubility problem between the solvent of the organic light emitting layer and the solvent of the first carrier transmission layer when adopting ink-jet printing to make the organic light emitting layer and the first carrier transmission layer, avoid causing destruction to the organic light emitting layer or the first carrier transmission layer, thereby the yield of the organic light emitting device formed by the ink-jet printing process is improved, thereby being beneficial to reducing the production cost.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an organic light emitting device provided in an embodiment of the present application.
Fig. 2 is a schematic structural diagram of an organic light emitting device according to still another embodiment of the present application.
Fig. 3 is a schematic structural diagram of an organic light emitting device according to still another embodiment of the present application.
Fig. 4 is a schematic view of a film structure of a display panel according to an embodiment of the present disclosure.
Fig. 5 is a schematic top view of a display panel according to an embodiment of the present disclosure.
Fig. 6 is a schematic manufacturing flow diagram of a manufacturing method of an organic light emitting device according to an embodiment of the present application.
Fig. 7 is a schematic view of a manufacturing flow in step S200 of the manufacturing method according to the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the features of the terms "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise. It is to be understood that, unless otherwise expressly stated or limited, the terms "connected" and "connecting" are used broadly and can refer to, for example, a direct connection, an indirect connection via an intermediary, a connection between two elements, or an interaction between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Embodiments of the present disclosure provide an organic light emitting device 100, a method for manufacturing the organic light emitting device 100, and a display panel, which are described in detail below.
The embodiment of the present application first provides a display panel, which includes a light emitting device and an array substrate 200, wherein the light emitting device is disposed on the array substrate 200, the array substrate 200 includes a substrate 201 and a switch device 202 disposed on the substrate 201, and the switch device 202 on the array substrate 200 is used for driving the light emitting device to emit light. Taking the display panel of the embodiment of the present application as an OLED display panel as an example, correspondingly, the light emitting device of the embodiment of the present application is an organic light emitting device 100, and the organic light emitting device 100 of the embodiment of the present application is described in detail below.
Referring to fig. 1 to 5, an organic light emitting device 100 according to an embodiment of the present disclosure includes a first electrode layer 10, an organic light emitting layer 20, a first carrier transport layer 40, and a second electrode layer 50, and the organic light emitting device 100 further includes a first solvent isolation layer 30 disposed between the organic light emitting layer 20 and the first carrier transport layer 40.
The first electrode layer 10, the second electrode layer 50, and the first solvent separation layer 30 may be formed by a sputtering process, and the organic light emitting layer 20 and the first carrier transport layer 40 may be formed by an inkjet printing process. Therefore, the first solvent separation layer 30 can be used to avoid the problem of mutual solvent solubility between the organic light-emitting layer 20 and the first carrier transport layer 40 formed by the inkjet printing process.
The thickness of the first solvent isolation layer 30 may be between 10nm-50 nm. Illustratively, the thickness of the first solvent isolation layer 30 may be 10nm, 25nm, or 50 nm. If the thickness of the first solvent isolation layer 30 is too large, the resistance of the first solvent isolation layer 30 may increase, and thus the voltage of the organic light emitting device 100 increases, the first carrier transmission distance may be long, the number of quenched carriers is increased, and further the efficiency of the organic light emitting device 100 may decrease, the cavity length of the microcavity of the organic light emitting device 100 is increased, and the color shift problem may occur; however, if the first solvent isolation layer 30 is too thin, the solvent blocking effect of the first solvent isolation layer 30 may be deteriorated, the first carrier transmission distance is shortened, and when the first carrier transmission distance cannot be recombined with the hole in the light emitting layer, the light emitting efficiency of the organic light emitting device 100 may be reduced, and thus, the thickness of the first solvent isolation layer 30 is controlled within a reasonable range, so that the light emitting efficiency and the light emitting effect of the organic light emitting device 100 may be ensured while the solvent blocking effect of the first solvent isolation layer is ensured.
In the embodiment of the present application, the light emitting material of the organic light emitting layer 20 may be a quantum dot light emitting material, or an organic electroluminescent material, and when the organic light emitting layer 20 employs the quantum dot light emitting material, the organic light emitting device 100 is a QLED light emitting device.
The organic light emitting device 100 of the embodiment of the application is provided with the first solvent isolation layer 30 between the organic light emitting layer 20 and the first carrier transport layer 40, so that the problem of mutual solubility between the solvent of the organic light emitting layer 20 and the solvent of the first carrier transport layer 40 when the organic light emitting layer 20 and the first carrier transport layer 40 are manufactured by ink jet printing can be avoided, the organic light emitting layer 20 or the first carrier transport layer 40 is prevented from being damaged, the yield of the organic light emitting device 100 formed by an ink jet printing process is improved, and the production cost is reduced.
In some embodiments, the first solvent isolation layer 30 is made of a metal semiconductor material. The metal semiconductor material may be a metal oxide, and specifically, the metal semiconductor material includes, but is not limited to, one or more of Indium Tin Oxide (ITO), Fluorine Tin Oxide (FTO), Antimony Tin Oxide (ATO), Aluminum Zinc Oxide (AZO), Gallium Zinc Oxide (GZO), Indium Zinc Oxide (IZO), Magnesium Zinc Oxide (MZO), and Aluminum Magnesium Oxide (AMO). The first solvent separation layer 30 may be a single-layer film structure, and exemplarily, the first solvent separation layer 30 may be a single-layer structure formed using only Indium Tin Oxide (ITO) preparation; the first solvent isolation layer 30 may also be a stacked structure of a plurality of film layers, and exemplarily, the first solvent isolation layer 30 may be a stacked structure prepared by only using ITO/FTO/ITO. The first solvent isolation layer 30 is made of the metal semiconductor material, so that the first solvent isolation layer 30 can be prepared and formed by adopting a sputtering (Sputter) process, compared with an evaporation process, the evaporation equipment adopting the evaporation process has high vacuum degree requirement (about 10E-5Pa), high equipment cost, about 30% of material utilization rate and serious particle (Part icle) problem in film forming, in the embodiment of the present application, the organic light emitting layer 20 and the carrier transport layer are formed using an inkjet printing process, and thus if the first solvent separation layer 30 is prepared using an evaporation process, it is likely that the high temperature in the evaporation process may cause the solvent of the organic light emitting layer 20 or the solvent for first carrier transport to volatilize or dissolve, therefore, the formation of the first solvent isolation layer 30 by the sputtering process is beneficial to improving the yield of the organic light emitting device 100 while reducing the manufacturing cost.
In some embodiments, the first electrode layer 10 is a cathode, the first carrier transport layer 40 is an electron transport layer, the second electrode layer 50 is an anode, and the first solvent isolation layer 30 is made of an N-type metal semiconductor material, and in the present embodiment, the first solvent isolation layer 30 is disposed between the organic light emitting layer 20 and the hole transport layer. The N-type metal semiconductor material has characteristics of high carrier mobility, adjustable energy band structure, high visible light band transmittance, and the like, and may be, for example, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and tin dioxide (SnO) 2 ) Titanium dioxide (TiO) 2 ) Is made of at least one material of (1). The first solvent isolation layer 30 is prepared by using an N-type metal semiconductor material, so that the first solvent isolation layer 30 itself has a good electron transmission effect, and the N-type metal semiconductor material is an inorganic substance and is not easily damaged by dissolution of an organic solvent, so that the electron transmission performance of the organic light emitting device 100 is improved, and meanwhile, the organic light emitting layer 20 is favorably prevented from being damaged by a solvent of the electron transmission layer in an inkjet printing process.
In some embodiments, the organic light emitting device 100 may further include a second carrier transport layer 70 and a second solvent isolation layer 60. The second carrier transport layer 70 is disposed between the organic light emitting layer 20 and the second electrode layer 50, and the second solvent isolation layer 60 is disposed between the organic light emitting layer 20 and the second carrier transport layer 70, wherein the first carrier transport layer 40 is an electron transport layer, the first electrode layer 10 is a cathode, the second carrier is a hole transport layer, the second electrode layer 50 is an anode, and correspondingly, the second carrier transport layer 70 is a hole transport layer. Specifically, the first solvent isolation layer 30 is disposed between the organic light emitting layer 20 and the electron transport layer, the second solvent isolation layer 60 is disposed between the organic light emitting layer 20 and the hole transport layer, the first solvent isolation layer 30 is made of an N-type metal semiconductor material, and the second solvent isolation layer 60 is made of a P-type metal semiconductor material, wherein the P-type metal semiconductor material may be, for example, a material such as a dock oxide, molybdenum oxide, or the like. The first solvent isolation layer 30 and the second solvent isolation layer 60 are respectively arranged on the two sides of the organic light-emitting layer 20, namely the solvent isolation layers are formed on the two sides of the organic light-emitting layer 20, so that the problem of mutual solubility between the solvent of the organic light-emitting layer 20 and the solvent of the adjacent carrier transport layer can be avoided, and the preparation yield of the organic light-emitting device 100 in the ink-jet printing process can be further improved; in addition, the first solvent isolation layer 30 and the second solvent isolation layer 60 can also respectively improve the carrier transport capability of the first transport layer and the second transport layer, which is beneficial to further improving the light emitting efficiency of the organic light emitting device 100.
In the embodiment, the organic light emitting device 100 may further include an electron injection layer, a hole injection layer, an encapsulation layer, and the like, in addition to the anode, the hole transport layer, the organic light emitting layer 20, and the electron transport layer. Wherein the hole injection layer is arranged between the second electrode layer 50 and the second carrier transport layer 70, i.e. the hole injection layer is arranged between the anode and the hole transport layer, the electron injection layer is arranged between the first electrode layer 10 and the first carrier transport layer 40, i.e. the electron injection layer is arranged between the anode and the electron transport layer, and the encapsulation layer is arranged on the side of the first electrode layer 10 facing away from the first carrier transport layer 40.
The organic light emitting device 100 further includes a pixel defining layer 80, and light emitting related functional layers such as the organic light emitting layer 20, the first carrier transport layer 40, the second carrier transport layer 70, the electron injection layer, and the hole injection layer are formed in pixel openings of the adjacent pixel defining layers 80.
In some embodiments, the first electrode layer 10 may also be an anode, and correspondingly, the first carrier transport layer 40 is a hole transport layer, the second electrode layer 50 is a cathode, and the first solvent isolation layer 30 is made of a P-type metal semiconductor material, in the embodiments of the present disclosure, the first solvent isolation layer 30 is disposed between the organic light emitting layer 20 and the hole transport layer, and the first solvent isolation layer 30 is formed by using a P-type metal semiconductor material, so that the first solvent isolation layer 30 itself has a good hole transport effect, and the P-type metal semiconductor material is an inorganic substance and is not easily damaged by organic solvent dissolution, so that the hole transport performance of the organic light emitting device 100 is improved, and at the same time, it is also beneficial to prevent the solvent of the organic light emitting layer 20 from being dissolved in the hole transport layer in the inkjet printing process.
In some embodiments, the second electrode layer 50 includes a connection electrode 51 and an auxiliary electrode 52, wherein the auxiliary electrode 52 and the connection electrode 51 are disposed at intervals on the same layer, the organic light emitting layer 20 is disposed on the connection electrode 51 and the auxiliary electrode 52, and the length of the connection electrode 51 is greater than that of the auxiliary electrode 52. In the present embodiment, the first electrode layer 10 is an anode. Wherein, the connection electrode 51 is used for connecting the switching device 202, and the auxiliary electrode 52 is used for assisting the ink flow on the surface of the first electrode layer 10. The surface of the first electrode layer 10 may be ink for forming a hole injection layer, and the first electrode layer 10 is also made of a metal semiconductor material, so that the surface energy of the first electrode layer 10 is low, the surface tension is weak, the surface hydrophilic capability of the first electrode layer 10 is strong, and the ink flow is assisted in an inkjet printing process.
When the organic light emitting device 100 of the embodiment of the present application is applied to a display panel, the display panel further includes an array substrate 200, the array substrate 200 includes switching devices 202 arranged in an array, illustratively, the switching devices 202 are Thin Film Transistors (TFTs), wherein the first electrode layer 10 is connected with a switching device 202, in particular, the switching device 202 is connected with a connection electrode 51 in the first electrode layer 10, and the switching device 202 is not connected with an auxiliary electrode 52, so that, when the organic light emitting device 100 operates, the portion of the organic light emitting layer 20 located above the connection electrode 51 can emit light, and a portion of the organic light emitting layer 20 above the auxiliary electrode 52 does not emit light, and since the length of the connection electrode 51 is greater than that of the auxiliary electrode 52, therefore, the light-emitting area of the organic light-emitting layer 20 is larger than the non-light-emitting area, which is beneficial to ensuring the aperture opening ratio of the sub-pixel. In addition, in the embodiment of the present application, a plurality of connection electrodes 51 and auxiliary electrodes 52 are disposed in each first electrode layer 10, the connection electrodes 51 and the auxiliary electrodes 52 are alternately disposed along the first direction X in sequence, one connection electrode 51 is connected to one switching device 202, and one connection electrode 51 is connected to form one sub-pixel, so that a plurality of sub-pixels disposed at intervals along the first direction X may be formed in each first electrode layer 10, and the color of the plurality of sub-pixels on the same first electrode layer 10 is the same, for example, the plurality of sub-pixels on the same first electrode layer 10 may be any one of a red sub-pixel R, a green sub-pixel G, or a blue sub-pixel B. The sub-pixels of different colors are arranged at intervals along the second direction Y. The first direction X and the second direction Y are perpendicular to each other, in this embodiment, the first direction X is a horizontal direction, and the second direction Y is a vertical direction.
In order to better implement the organic light emitting device 100 of the present application, an embodiment of the present application further provides a method for manufacturing the organic light emitting device 100, please refer to fig. 5, the method includes the following steps S100 to S500:
s100, forming the first electrode layer 10 by adopting a sputtering coating process.
And S200, forming an organic light-emitting layer 20 on the first electrode layer 10 by adopting an ink-jet printing process.
S300, forming a first solvent isolation layer 30 on the organic light emitting layer 20 by a sputtering process.
S400, preparing the first carrier transport layer 40 on the first solvent isolation layer 30 by using an inkjet printing process.
And S500, forming a second electrode layer 50 on the first carrier transport layer 40 by adopting a sputtering coating process.
In the method for manufacturing the organic light emitting device 100 according to the embodiment of the present application, the first solvent isolation layer 30 is prepared between the organic light emitting layer 20 and the first carrier transport layer 40, so that the problem that the organic light emitting layer 20 and the first carrier transport layer 40 are mutually soluble when the electron transport layer is inkjet printed on the organic light emitting layer 20 can be avoided, damage to the organic light emitting layer 20 or the first carrier transport layer 40 is avoided, the yield of the organic light emitting device 100 formed by the inkjet printing process is improved, and reduction of the production cost is facilitated.
In some embodiments, in the step S300, the first solvent separation layer 30 is formed on the organic light emitting layer 20 using a sputtering process in which a degree of vacuum in a sputtering chamber is 0.5 to 3.5 × 10 -2 mTorr, process gas flow of 15-20sccm, and power of 50W-60W, illustratively, in this example, the vacuum in the sputtering chamber is 2.5X 10-2mTorr, process gas flow of 18sccm, and power of 50W. By controlling the process parameters of the sputter coating, the thickness of the first solvent isolation layer 30 can be controlled within the range of 10nm to 50nm, so that the light emitting efficiency and the light emitting effect of the organic light emitting device 100 can be ensured while the solvent blocking effect of the first solvent isolation is ensured.
In some embodiments, referring to fig. 6, step S200 further includes step S201 before the step of forming the organic light emitting layer 20 on the first electrode layer 10 by using an inkjet printing process:
s201, forming a second carrier transmission layer 70 on the first electrode layer 10 by adopting an ink-jet printing process;
s202, forming a second solvent isolation layer 60 on the second carrier transport layer 70 by adopting a sputtering coating process;
s203, preparing the organic light emitting layer 20 on the second solvent isolation layer 60 by using an inkjet printing process.
The first carrier transport layer 40 is an electron transport layer, the first electrode layer 10 is a cathode, the second carrier is a hole transport layer, the second electrode layer 50 is an anode, and correspondingly, the second carrier transport layer 70 is a hole transport layer. Specifically, the first solvent isolation layer 30 is disposed between the organic light emitting layer 20 and the electron transport layer, the second solvent isolation layer 60 is disposed between the organic light emitting layer 20 and the hole transport layer, the first solvent isolation layer 30 is made of an N-type metal semiconductor material, the second solvent isolation layer 60 is made of a P-type metal semiconductor material, the first solvent isolation layer 30 and the second solvent isolation layer 60 are respectively disposed on two sides of the organic light emitting layer 20, that is, the solvent isolation layers are formed on two sides of the organic light emitting layer 20, so that the problem of mutual solubility between the solvent of the organic light emitting layer 20 and the solvent of the adjacent carrier transport layer (the first carrier transport layer 40 or the second carrier transport layer 70) can be avoided, and the preparation yield of the organic light emitting device 100 in the inkjet printing process can be further improved; in addition, the first solvent isolation layer 30 and the second solvent isolation layer 60 can also respectively improve the carrier transport capability of the first transport layer and the second transport layer, which is beneficial to further improving the light emitting efficiency of the organic light emitting device 100.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments. In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and the specific implementation of each unit or structure may refer to the foregoing method embodiment, which is not described herein again.
The organic light emitting device, the manufacturing method of the organic light emitting device, and the display panel provided in the embodiments of the present application are described in detail above, and specific examples are applied herein to explain the principle and implementation manner of the embodiments of the present application, and the description of the embodiments above is only used to help understanding the technical solutions and core ideas of the embodiments of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (10)

1. An organic light-emitting device comprising a first electrode layer, an organic light-emitting layer, a first carrier transport layer, and a second electrode layer, the organic light-emitting device further comprising:
and the first solvent isolation layer is arranged between the organic light-emitting layer and the first carrier transport layer.
2. The organic light-emitting device of claim 1, wherein the first solvent isolation layer is made of a metal semiconductor material.
3. The organic light-emitting device according to claim 2, wherein the first electrode layer is a cathode, the first carrier transport layer is an electron transport layer, the second electrode layer is an anode, and the first solvent isolation layer is made of an N-type metal semiconductor material.
4. The organic light-emitting device according to claim 3, further comprising:
a second carrier transport layer disposed between the organic light emitting layer and the second electrode layer;
and the second solvent isolation layer is arranged between the organic light-emitting layer and the second carrier transmission layer and is made of a P-type metal semiconductor material.
5. The organic light-emitting device according to claim 2, wherein the first electrode layer is an anode, the first carrier transport layer is a hole transport layer, the second electrode layer is a cathode, and the first solvent isolation layer is made of a P-type metal semiconductor material.
6. The organic light-emitting device according to claim 4, wherein the second electrode layer comprises:
the organic light emitting diode comprises a connecting electrode and an auxiliary electrode, wherein the auxiliary electrode and the connecting electrode are arranged at intervals on the same layer, the organic light emitting layer is arranged on the connecting electrode and the auxiliary electrode, and the length of the connecting electrode is greater than that of the auxiliary electrode.
7. A method of fabricating an organic light emitting device, comprising:
forming a first electrode layer by adopting a sputtering coating process;
forming an organic light-emitting layer on the first electrode layer by adopting an ink-jet printing process;
forming a first solvent isolation layer on the organic light-emitting layer by adopting a sputtering coating process;
preparing a first carrier transmission layer on the first solvent isolation layer by adopting an ink-jet printing process;
and forming a second electrode layer on the first current carrier transmission layer by adopting a sputtering coating process.
8. The method of claim 7, wherein in the step of forming the first solvent isolation layer on the organic light emitting layer by a sputter coating process, a degree of vacuum in a sputter chamber in the sputter coating process is 0.5 to 3.5 x 10 -2 mTorr, process gas flow of 15-20sccm, power of 50W-60W.
9. The method of claim 7, wherein before the step of forming an organic light emitting layer on the first electrode layer by an inkjet printing process, the method further comprises:
forming a second carrier transmission layer on the first electrode layer by adopting an ink-jet printing process;
forming a second solvent isolation layer on the second carrier transmission layer by adopting a sputtering coating process;
and preparing the organic light-emitting layer on the second solvent isolation layer by adopting an ink-jet printing process.
10. A display panel comprising the organic light-emitting device according to any one of claims 1 to 5.
CN202210491932.5A 2022-05-07 2022-05-07 Organic light-emitting device, manufacturing method of organic light-emitting device and display panel Pending CN114883507A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210491932.5A CN114883507A (en) 2022-05-07 2022-05-07 Organic light-emitting device, manufacturing method of organic light-emitting device and display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210491932.5A CN114883507A (en) 2022-05-07 2022-05-07 Organic light-emitting device, manufacturing method of organic light-emitting device and display panel

Publications (1)

Publication Number Publication Date
CN114883507A true CN114883507A (en) 2022-08-09

Family

ID=82674609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210491932.5A Pending CN114883507A (en) 2022-05-07 2022-05-07 Organic light-emitting device, manufacturing method of organic light-emitting device and display panel

Country Status (1)

Country Link
CN (1) CN114883507A (en)

Similar Documents

Publication Publication Date Title
US10784471B2 (en) Organic light emitting display device and method of making the same
JP5138542B2 (en) Organic electroluminescence device and method for manufacturing the same
JP4185002B2 (en) EL display element
CN110047893B (en) Organic light emitting diode display and manufacturing method thereof
WO2010070800A1 (en) Organic el light emitting device
KR20100118134A (en) Oled device with short reduction layer
JP5384752B2 (en) Deposition film forming method and display device manufacturing method
WO2020233284A1 (en) Display panel and preparation method therefor, and display device
KR20140045157A (en) Organic light emitting display and method of manufacturing the same
CN110335953B (en) Organic electroluminescent device and display panel
CN110911580B (en) Organic light emitting diode display panel and preparation method thereof
KR20110035049A (en) Organic electro-luminescence device and method for fabricating of the same
JP2017092213A (en) Organic electroluminescent element, display device and method of manufacturing organic electroluminescent element
WO2021082146A1 (en) Display panel and manufacturing method therefor
WO2019041578A1 (en) Oled substrate and manufacturing method therefor
KR20190071795A (en) OLED substrate and manufacturing method thereof
CN111554822A (en) Organic light emitting diode panel, preparation method thereof and display device
KR101001549B1 (en) Electroluminescence device
CN109817669B (en) Organic light-emitting diode display
WO2023173473A1 (en) Display panel and electronic device
CN109378409B (en) Electroluminescent device and manufacturing method thereof
KR102294170B1 (en) Organic Light Emitting Diode Display Device and Method of Fabricating the Same
CN114420859B (en) Display substrate, display device and preparation method of display substrate
CN114883507A (en) Organic light-emitting device, manufacturing method of organic light-emitting device and display panel
JP2011091093A (en) Organic el element

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination