CN114864478A - 填充衬底表面上的凹部的方法、系统及结构 - Google Patents

填充衬底表面上的凹部的方法、系统及结构 Download PDF

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CN114864478A
CN114864478A CN202210110561.1A CN202210110561A CN114864478A CN 114864478 A CN114864478 A CN 114864478A CN 202210110561 A CN202210110561 A CN 202210110561A CN 114864478 A CN114864478 A CN 114864478A
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substrate
deposition
precursor
reaction chamber
depositing
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须佐圭雄
杉浦博次
菊地良幸
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ASM IP Holding BV
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Abstract

公开了用于形成结构的方法和系统以及使用该方法或系统形成的结构。示例性方法包括在衬底的表面上沉积材料，并处理沉积的材料以形成处理的材料。这些方法可用于填充衬底表面上的凹部。

Description

填充衬底表面上的凹部的方法、系统及结构
技术领域
本公开总体涉及形成适用于电子器件制造的结构的方法。更具体地，本公开的示例涉及形成包括可用于填充结构表面上的凹部的沉积材料层的结构的方法、包括这种层的结构以及用于执行该方法和/或形成该结构的系统。
背景技术
在诸如半导体器件的器件制造过程中，通常希望用绝缘或介电材料填充衬底表面上的特征或凹部(例如沟槽或间隙)。填充凹部的一些技术包括沉积一层可流动材料，比如可流动碳材料。
尽管使用可流动碳材料填充特征对于一些应用可以很好地工作，但使用可流动碳的传统沉积技术填充特征会有若干缺点，特别是当要填充的凹部的尺寸减小时。例如，相对于其他材料，可流动碳膜可能不表现出期望的热稳定性(例如没有收缩)、密度、硬度、模量和/或蚀刻选择性。
随着器件和特征尺寸不断减小，越来越难以将传统的可流动碳材料沉积技术应用于制造过程，同时获得所需的填充能力和材料特性。因此，需要用于形成结构的改进方法，特别是用于用材料填充衬底表面上的凹部的方法，其减轻沉积材料中的空隙形成和/或提供期望的材料特性。
在本部分中阐述的任何讨论(包括问题和解决方案的讨论)已经包括在本公开中，仅是为了提供本公开的背景，并且不应被视为承认任何或所有讨论在本发明被制造时是已知的或以其他方式构成现有技术。
发明内容
本公开的各种实施例涉及形成适用于电子器件形成的结构的方法。虽然本公开的各种实施例解决现有方法和结构的缺点的方式将在下面更详细地讨论，但通常，本公开的示例性实施例提供了用于形成包括适用于填充衬底表面上的凹部的沉积材料的结构的改进方法、包括沉积材料的结构以及用于执行该方法和/或形成该结构的系统。如下文更详细描述，沉积材料可以暴露于热过程和/或等离子体过程或者使用其进行处理，以使沉积材料流动。下面提供的示例性方法提供了具有无空隙凹部填充的结构，同时还提供了具有所需特性的凹部填充材料，比如密度、热稳定性、硬度、模量和/或蚀刻选择性(例如与氧化硅、氮化硅、硅和/或金属相比)。
根据本公开的各种实施例，提供了一种填充衬底表面上的凹部的方法。该方法包括：在反应室内提供衬底；在衬底表面上沉积材料；以及在沉积足够量的沉积材料以填充凹部之后，将沉积材料暴露于沉积后处理以使沉积材料在凹部内流动。沉积材料可以是或包括碳、氧化硅、氮化硅和碳化硅中的一种或多种。根据本公开的示例，沉积步骤包括：使前体流入反应室；并且将前体暴露于等离子体以形成沉积材料。沉积后处理可以包括加热衬底(有时称为退火)以使沉积材料流动。在这些情况下，衬底可被加热到例如约50℃至约800℃的温度。另外或可替代地，沉积后处理可以包括等离子体处理。等离子体处理可以包括例如将惰性气体和/或含氮气体暴露于等离子体。在等离子体处理期间，衬底的温度可以是例如约50℃至约800℃。根据这些实施例的进一步示例，前体可以包括环状结构和/或羰基官能团。羰基可以促进处理步骤期间沉积材料的回流。
根据本公开的附加示例，一种填充衬底表面上的凹部的方法包括在反应室内提供衬底，在衬底的表面上沉积材料，以及将沉积材料暴露于沉积后处理以使沉积材料在凹部内流动。在这些情况下，前体包括环状结构和至少一个羰基官能团。沉积后处理可以与上文和本文其他地方描述的沉积后处理相同或相似。
根据本公开的又一示例性实施例，至少部分地根据这里描述的方法形成一种结构。该结构可以包括沉积或处理的材料层，该材料层表现出期望的特性，比如热稳定性、密度、硬度、模量、蚀刻选择性等。
根据本公开的又一示例性实施例，提供了一种用于执行如本文所述的方法和/或用于形成结构的系统。
参考附图，通过下面对某些实施例的详细描述，这些和其他实施例对于本领域技术人员来说将变得显而易见；本发明不限于所公开的任何特定实施例。
附图说明
当结合以下说明性附图考虑时，通过参考详细描述和权利要求，可以获得对本公开的示例性实施例的更完整理解。
图1示出了根据本公开的示例性实施例的方法。
图2示出了根据本公开的示例性实施例的另一种方法。
图3示出了根据本公开的示例性实施例的系统。
图4示出了根据本公开的示例性方法和结构，以及该结构与使用包括循环等离子体沉积和处理过程的方法形成的结构的比较。
图5示出了根据本公开示例的热处理过程之前和之后的结构。
图6示出了根据本公开示例的热处理过程之前和之后的结构。
图7示出了根据本公开示例的等离子体处理过程之前和之后的结构。
图8示出了根据本公开示例的适合用作前体的环状结构的示例性环状结构。
图9示出了根据本公开示例的适合用作前体的羰基官能团的示例性官能团。
应当理解，附图中的元件是为了简单和清楚而示出的，并不一定是按比例绘制的。例如，图中一些元件的尺寸可能相对于其他元件被放大，以帮助提高对本公开的所示实施例的理解。
具体实施方式
尽管下面公开了某些实施例和示例，但本领域技术人员将理解，本发明超出了具体公开的实施例和/或本发明的用途及其明显的修改和等同物。因此，所公开的本发明的范围不应被下面描述的特定公开实施例所限制。
本公开总体涉及沉积材料的方法、填充衬底表面上的凹部的方法、形成结构的方法、使用该方法形成的结构以及用于执行该方法和/或形成该结构的系统。举例来说，本文描述的方法可用于用诸如碳、氧化硅、氮化硅和/或碳化硅材料的材料填充特征或凹部，比如衬底表面上的间隙(例如沟槽、通孔或突起之间的空间)。术语间隙和凹部可以互换使用。
为了在间隙填充过程中减少空隙和/或接缝形成，沉积材料最初可以是可流动的，并在间隙内流动以填充或基本填充间隙。最初可流动材料可以固化，然后在进一步加工或处理时回流，例如热处理和/或等离子体处理，如下面更详细描述。如下文进一步阐述，初始固化的材料可以包括凹部内的空隙和/或接缝。根据本公开的示例，在材料回流时，空隙和/或接缝被去除或不再可见。除了回流沉积材料之外，该处理还可以增加一个或多个期望特性的值，比如热稳定性、硬度、模量和蚀刻选择性。
本文描述的示例性方法和结构可用于各种应用，包括但不限于3D交叉点存储器件中的单元隔离、自对准过孔、伪栅极、反向色调图案、PC RAM隔离、切割硬掩模、DRAM存储节点接触(SNC)隔离等。此外，尽管本公开的大部分涉及碳沉积材料，除非另有说明，本公开不限于这种材料。
在本公开中，“气体”可以指在常温常压下为气体的材料、蒸发的固体和/或蒸发的液体，并且可以由单一气体或气体混合物构成，这取决于情况。除了处理气体之外的气体，即不经过气体分配组件(比如喷淋头、其他气体分配装置等)引入的气体，可以用于例如密封反应空间，其包括密封气体，比如惰性气体。在某些情况下，比如在材料沉积的背景下，术语“前体”可以指参与产生另一种化合物的化学反应的化合物，特别是构成膜基质或膜主骨架的化合物，而术语“反应物”可以指在一些情况下不同于前体的化合物，其激活前体、改性前体或催化前体的反应，例如施加功率(例如射频(RF)功率)。在某些情况下，术语前体和反应物可以互换使用。术语“惰性气体”指的是当例如施加功率(例如RF功率)时，没有在可感知的程度上参与化学反应的气体和/或激发前体(例如促进前体聚合)的气体，但与反应物不同，它可能不会在可感知的程度上成为膜基质的一部分。
如本文所用，术语“衬底”可以指可用于形成或可以在其上形成器件、电路或膜的任何一种或多种底层材料。衬底可以包括块体材料，比如硅(例如单晶硅)、其他第四族材料，比如锗，或者化合物半导体材料，比如第三-第五族或第二-第六族半导体，并且可以包括在块体材料之上或之下的一层或多层。此外，衬底可以包括各种特征，比如在衬底的层或块体材料的至少一部分上或内形成的凹部(例如间隙、通孔或突起之间的空间)、线等。举例来说，一个或多个特征/凹部可以具有约10nm至约100nm的宽度、约30nm至约1000nm的深度或高度，和/或约3至100的纵横比。
在一些实施例中，“膜”是指在垂直于厚度方向的方向上延伸的层。在一些实施例中，“层”是指在表面上形成的具有一定厚度的材料，并且可以是膜或非膜结构的同义词。膜或层可以由具有特定特性的离散的单个膜或层或者多个膜或层构成，并且相邻膜或层之间的边界可以是或不是清晰的，并且可以是或不是基于相邻膜或层的物理、化学和/或任何其他特性、形成过程或顺序和/或功能或目的而建立的。
如本文所用，术语“碳层”或“碳材料”可以指其化学式可以表示为包括碳的层。包含碳材料的层可以包括其他元素，比如氮和氢中的一种或多种。
如本文所用，术语“氧化硅层”或“氧化硅材料”可以指其化学式可以表示为包括硅和氧的层。包含氧化硅材料的层可以包含其他元素，比如氮和氢中的一种或多种。
如本文所用，术语“氮化硅层”或“氮化硅材料”可以指其化学式可以表示为包括硅和氮的层。包含氮化硅材料的层可以包括其他元素，比如氧和氢中的一种或多种。
如本文所用，术语“碳化硅层”或“碳化硅材料”可以指其化学式可以表示为包括硅和碳的层。包含碳化硅材料的层可以包括其他元素，比如氧、氮和氢中的一种或多种。
如本文所用，术语“结构”可以指部分或完全制造的器件结构。举例来说，结构可以是衬底或包括其上形成有一个或多个层和/或特征的衬底。
在本公开中，“连续地”可以指不打破真空、作为时间线不中断、不进行任何材料介入步骤、不改变处理条件地紧接其后作为下一步骤，或者在一些实施例中且根据情况，在两个结构之外的两个结构之间不介入离散的物理或化学结构。
可流动性(例如初始可流动性)可以如下确定：
表1
Figure BDA0003494960010000051
其中，B/T是指在凹部被填充之前，沉积在凹部底部的膜厚度与沉积在形成凹部的顶表面上的膜厚度之比。通常，使用纵横比为约1或更小的宽凹部来评估可流动性，因为通常凹部的纵横比越高，B/T比变得越高。当凹部的纵横比更高时，B/T比通常变得更高。如本文所用，“可流动的”膜或材料表现出良好或更好的可流动性。
如下文更详细阐述，当挥发性烃前体例如通过等离子体聚合并沉积在衬底的表面上时，可以暂时并最初获得膜的可流动性，其中气体前体被等离子体气体放电提供的能量活化或破碎，从而引发聚合。所得聚合物材料可以表现出暂时可流动行为。当沉积步骤完成时和/或在短时间(例如约3.0秒)后，膜在沉积温度和压力下不再可流动，而是变得固化，因此可以不采用单独的固化过程。如下所述，固化材料可以使用处理过程回流。
在本公开中，变量的任意两个数字可以构成该变量的可行范围，并且指示的任何范围可以包括或排除端点。此外，在一些实施例中，指示的变量任何值(不管它们是否用“约”指示)可以指精确值或近似值，并且包括等同物，并且可以指平均值、中值、代表性、多数等。此外，在本公开中，术语“包括”、“由…构成”和“具有”在一些实施例中可以独立地指“通常或广泛地包括”、“包含”、“基本由…构成”或“由…构成”。在本公开中，任何定义的含义在一些实施例中不一定排除普通和习惯含义。
现在转向附图，图1示出了根据本公开示例的方法100。方法100可用于在衬底上沉积材料，以例如填充衬底表面上的一个或多个凹部。
方法100包括以下步骤：在反应室内提供衬底102，在衬底的表面上沉积材料104，并且在沉积足够量的沉积材料以填充凹部之后，将沉积材料暴露于沉积后处理以使沉积材料在凹部内流动106。根据本公开的至少一些示例，方法100不包括循环过程。相反，该方法包括单个沉积步骤104和单个处理步骤106。
在反应室内提供衬底的步骤102期间，衬底被提供到气相反应器的反应室中。根据本公开的示例，反应室可以形成沉积反应器的一部分，比如原子层沉积(ALD)(例如PEALD)反应器或化学气相沉积(CVD)(例如PECVD)反应器。本文描述的方法的各个步骤可以在单个反应室内进行(例如连续地)或者可以在多个反应室中进行，比如组合工具的反应室。
在步骤102期间，衬底可以被带到期望的温度和/或反应室可以被带到期望的压力，比如适用于后续步骤的温度和/或压力。举例来说，反应室内的温度(例如衬底或衬底支撑件的温度)可以为约50℃至约800℃。反应室内的压力可以为约100Pa至约1300Pa。根据本公开的特定示例，衬底包括一个或多个特征，比如凹部。
在步骤104期间，材料被沉积到衬底表面上。根据本公开的示例，在步骤104期间沉积足够的材料来填充一个或多个凹部。沉积材料可以固化，并且可以在一个或多个凹部中的凹部内包括一个或多个空隙。
如图所示，步骤104可以包括流动前体108和将前体暴露于等离子体110的子步骤。
在子步骤108期间，适用于形成沉积材料的前体被提供给反应室。在步骤108期间，前体的流量可以在约100sccm至约5000sccm的范围内。子步骤108的持续时间范围可以从约30秒到约6000秒。
前体可以包括碳和硅中的一种或多种。根据本公开的各种示例，前体包括环状结构和/或羰基官能团。示例性环状结构包括选自由以下构成的组的环状结构：苯；茚；环戊二烯；环己烷；吡咯；呋喃；噻吩；磷脂；吡唑；咪唑；噁唑；异噁唑；噻唑；吲哚；苯并呋喃；苯并噻吩；异吲哚；异苯并呋喃；二苯磷酰；苯并咪唑；苯并噁唑；苯并噻唑；苯并异噁唑；吲唑；苯并异噻唑；苯并三唑；嘌呤；吡啶；膦酰亚胺；嘧啶；吡嗪；哒嗪；三嗪；1,2,4,5-四嗪；1,2,3,4-四嗪；1,2,3,5-四嗪；六嗪；喹啉；异喹啉；喹喔啉；喹唑啉；辛诺林；蝶啶；酞嗪；吖啶；4aH-呫吨；4aH-噻吨；4aH-吩恶嗪；4a,10a-二氢-10H-吩噻嗪；以及咔唑。这些示例性环状结构在图8中示出。示例性羰基可以选自由以下构成的组中的一种或多种：醛、酮、羧酸、酯、酰胺、烯酮、酰氯和酸酐。根据本公开的进一步示例，前体包括一个或多个羰基以及甲基、乙基、丙基、丁基、胺基和羟基中的一个或多个。前体可以包括例如附接到环状结构上的1-6或1-4个官能团，其中一个或多个官能团包括羰基官能团。羰基可以包括一个或多个官能团—例如选自由C1-C6(例如C1-C3)烷烃、烯烃或醇官能团构成的组。羰基官能团被认为有助于在步骤106期间沉积材料的回流。
在步骤110期间，将前体暴露于(例如直接)等离子体，以使前体聚合，从而变成粘性流体，并最初在衬底表面固化。用于沉积的等离子体功率范围可以从约10W到约5000W。等离子体功率的RF频率范围可以从400kHz到100MHz。
根据本公开的示例，步骤108和110重叠。根据进一步的示例，步骤110的持续时间比步骤108短。例如，步骤110可以在步骤108之后开始和/或在步骤108结束之前结束。
在步骤106期间，可以使用处理使在步骤104期间沉积的材料流动。处理可以包括热处理(例如提高衬底的温度)和/或等离子体处理。
在热处理的情况下，步骤106可以包括将衬底加热到约50℃至约800℃的温度。在一些情况下，步骤106期间衬底的温度可以高于步骤104期间衬底的温度。在步骤106期间，反应室内的压力可以在约100Pa和约1300Pa之间。根据本公开的进一步示例，在步骤106期间，可以向反应室提供惰性气体和/或含氮气体。示例性含氮气体包括氮、NH3和N2O。步骤106的持续时间可以从约5秒到约3000秒。
在等离子体处理的情况下，步骤106包括由气体形成活性物质。气体可以包括含氮气体，比如选自由氮、NH3、N2O构成的组的气体。可以使用例如直接等离子体来形成活化物质。
用于形成等离子体的功率范围可以从约10W到约5000W。功率的频率范围可以从约400kHz到约100MHz。等离子体处理步骤的持续时间可以在约5秒至约3000秒的范围内。等离子体处理步骤期间反应室内的温度可以是约50℃至约800℃或者约30℃至约700℃。等离子体处理期间反应室内的压力可以在约100Pa至约1300Pa之间。
在步骤104和/或106期间，可以向反应室提供一种或多种惰性气体，比如氩、氦、氮或它们的任何混合物(例如在步骤104和106期间连续提供)。在该步骤期间，惰性气体到反应室的流量可以从约500sccm到约8000sccm。惰性气体可用于促进反应室内等离子体的点燃和/或维持，从反应室中吹扫反应物和/或副产物，和/或用作载气来帮助将前体输送到反应室。
图2示出了根据本公开的进一步示例的另一种方法200。类似于方法100，方法200可用于在衬底上沉积材料，以例如填充衬底表面上的一个或多个凹部。
方法200包括以下步骤：在反应室内提供衬底202，在衬底的表面上沉积材料204，以及将沉积材料暴露于沉积后处理，以使沉积材料在凹部内流动206。
步骤202可以与步骤102相同或相似。
步骤204包括子步骤208和210。反应室内的温度和压力可以与上面结合步骤104描述的温度和压力相同或相似。
子步骤208可以类似于子步骤108，除了子步骤208包括流动包括环状结构和至少一个羰基官能团的前体(这种前体也可以在步骤108期间提供)，并且步骤208不一定包括在处理之前沉积足够的材料来填充凹部。在步骤208期间提供的前体还可以包括碳和硅中的一种或多种，使得沉积材料包括碳、氧化硅、氮化硅和碳化硅中的一种或多种。前体流量和步骤208的持续时间可以与步骤108的流量和持续时间相同或相似。
在步骤208期间提供的前体包括环状结构和羰基官能团。环状结构可以选自由以下构成的组：苯；茚；环戊二烯；环己烷；吡咯；呋喃；噻吩；磷脂；吡唑；咪唑；噁唑；异噁唑；噻唑；吲哚；苯并呋喃；苯并噻吩；异吲哚；异苯并呋喃；二苯磷酰；苯并咪唑；苯并噁唑；苯并噻唑；苯并异噁唑；吲唑；苯并异噻唑；苯并三唑；嘌呤；吡啶；膦酰亚胺；嘧啶；吡嗪；哒嗪；三嗪；1,2,4,5-四嗪；1,2,3,4-四嗪；1,2,3,5-四嗪；六嗪；喹啉；异喹啉；喹喔啉；喹唑啉；辛诺林；蝶啶；酞嗪；吖啶；4aH-呫吨；4aH-噻吨；4aH-吩恶嗪；4a,10a-二氢-10H-吩噻嗪；以及咔唑。这些环状结构在图8中示出。羰基官能团可以选自由以下构成的组：醛、酮、羧酸、酯、酰胺、烯酮、酰氯和酸酐。这种官能团如图9所示。根据本公开的更具体的示例，前体包括一个或多个羰基和甲基、乙基、丙基、丁基、胺基和羟基中的一个或多个，比如包括上述官能团的前体。
子步骤210可以与子步骤110相同或相似。步骤210期间的功率、持续时间、温度和/或压力可以与上面关于子步骤110提到的相应功率、持续时间、温度和/或压力相同或相似。
步骤206可以与步骤106相同或相似。步骤206期间的功率、持续时间、温度和/或压力可以与上面结合步骤106提到的相应功率、持续时间、温度和/或压力相同或相似。
图4示出了使用循环沉积和处理过程(a)沉积的碳膜与根据本公开(b)的示例的沉积步骤(例如步骤104或204)相比的比较。在所示示例中，结构402包括其上形成有突起404-410的衬底403，以及覆盖衬底403的沉积材料412。结构414包括其上形成有突起416-422的衬底415和覆盖衬底415的沉积材料424。
如图4所示，包括循环沉积和处理步骤的方法可导致在过程完成时形成空隙(例如空隙426)，而如果没有循环处理，则不会形成空隙。图(c)示出了凹部423内没有形成空隙，具有约14的纵横比。然而，如下所述，在一些情况下，根据本公开的示例，在沉积材料的步骤期间会形成空隙。如果不进行处理，沉积材料424可能不会表现出期望的特性。例如，在图示的情况下，当暴露于约350℃的温度约30分钟时，沉积材料424可能表现出不期望的大收缩。由于沉积材料的低密度，沉积材料也可能在例如超过200℃的温度下容易蒸发。
图5示出了根据本公开的进一步示例形成的结构502(图a)和结构524(图b)。结构502包括衬底504和形成在其上的突起506-512。结构524包括衬底505和形成在其上的突起514-520。结构502包括覆盖衬底504的沉积材料522。如图所示，沉积材料522包括空隙526。在沉积材料522(例如足够的材料来填充突起(例如突起508、510)之间的凹部528)之后，沉积材料522暴露于沉积后处理，以使沉积材料522在凹部内流动，从而形成结构524。在处理之后，沉积材料522变成处理材料530。在图5所示的示例中，沉积后处理包括将衬底504加热到约50℃至约800℃的温度。根据本公开的其他示例，衬底可以在沉积后处理期间被加热到约50℃至约800℃的温度或高于沉积材料的步骤期间的衬底温度。加热步骤的示例性温度、压力和环境如上所述。
图6示出了根据本公开的进一步示例形成的结构602(图a)和结构604(图b)。结构602包括衬底606和形成在其上的高纵横比突起608、610、621。结构604包括衬底612和形成在其上的突起614、616、617。结构602包括覆盖衬底606的沉积材料618。如图所示，沉积材料618包括在突起610和621之间的凹部622内形成的空隙620。在沉积材料618(例如足够的材料来填充凹部622)之后，沉积材料618暴露于沉积后处理，以使沉积材料618在凹部622内流动，从而形成包括处理材料624的结构604。图6类似于图5，除了与结构502、524相比，结构602和604包括更高纵横比特征。
图7示出了根据本公开示例的附加结构702、704。结构702包括衬底706和形成在其上的突起708-714。结构704包括衬底716和形成在其上的突起718-728。结构702包括覆盖衬底706的沉积材料730。如图所示，沉积材料730包括空隙731。在沉积材料730(例如足够的材料来填充突起(例如突起712、714)之间的凹部732)之后，沉积材料730暴露于沉积后处理，以使沉积材料730在凹部(例如凹部732)内流动，从而形成结构704。处理后，沉积材料730变成处理材料734。在这种情况下，沉积后处理包括等离子体处理。在等离子体处理期间，衬底可被加热到与沉积材料步骤期间的衬底温度约相同(例如在约10℃之内)的温度，或者比沉积材料步骤期间的衬底温度高的约50℃到约800℃。上面提到了等离子体处理的示例性温度、压力和环境。
图3示出了根据本公开示例性实施例的反应器系统300。反应器系统300可用于执行本文所述的一种或多种方法、步骤或子步骤和/或形成本文所述的一种或多种结构或其部分。
反应器系统300包括在反应室3的内部11(反应区)中平行且彼此面对的一对导电平板电极4、2。通过从电源25向一个电极(例如电极4)施加例如HRF功率(例如13.56MHz或27MHz)并将另一个电极(例如电极2)电接地，可以在反应室3内激发等离子体。温度调节器可以设置在下平台2(下电极)中，并且放置在其上的衬底1的温度可以保持在期望的温度。电极4可以用作气体分配装置，比如喷淋板。反应气体、稀释气体(如果有的话)、前体气体等可以分别使用气体管线20、气体管线21和气体管线22中的一个或多个从源27、28和/或29引入反应室3，并穿过喷淋板4。尽管用三条气体管线示出，但反应器系统800可以包括任何合适数量的气体管线。
在反应室3中，设置带有排气管线7的圆形导管13，反应室3的内部11中的气体可以通过该导管排出。此外，设置在反应室3下方的转移室5设置有密封气体管线24，以将密封气体经由转移室5的内部16(转移区)引入反应室3的内部11，其中设置用于分离反应区和转移区的分离板14(从该图中省略了晶片通过其转移到转移室5中或从转移室5中转移出来的闸阀)。转移室还设置有排气管6。在一些实施例中，沉积和处理步骤在相同的反应空间中进行，使得两个或更多个(例如所有)步骤可以连续进行，而无需将衬底暴露于空气或其他含氧气氛中。
在一些实施例中，惰性气体或载气向反应室3的连续流动可以使用流通系统(FPS)来实现，其中载气管线设置有具有前体储存器(瓶)的迂回管线，并且主管线和迂回管线被切换，其中当仅打算将载气供给到反应室时，迂回管线关闭，而当载气和前体气体都打算供给到反应室时，主管线关闭且载气流过迂回管线并与前体气体一起从瓶中流出。以这种方式，载气可以连续地流入反应室，并且可以通过在主管线和迂回管线之间切换来以脉冲的方式携带前体气体，而基本不会使反应室的压力波动。
本领域技术人员将理解，该装置包括一个或多个控制器26，其被编程或以其他方式配置成使这里描述的一个或多个方法步骤得以执行。如本领域技术人员将理解，控制器与反应器的各种电源、加热系统、泵、机器人和气体流量控制器或阀连通。举例来说，控制器26可以配置成执行本文所述方法的沉积、暴露和沉积后处理步骤。
在一些实施例中，可以使用双室反应器(用于处理晶片的两个部分或隔室彼此靠近设置)，其中惰性气体可以通过共享管线供应，而前体气体通过非共享管线供应。
上述公开的示例性实施例不限制本发明的范围，因为这些实施例仅仅是本发明实施例的示例。任何等同的实施例都在本发明的范围内。实际上，除了在此示出和描述的那些之外，本公开的各种修改比如所描述的元件的替代有用组合对于本领域技术人员来说从描述中变得显而易见。这种修改和实施例也旨在落入所附权利要求的范围内。

Claims (24)

1.一种填充衬底表面上的凹部的方法，该方法包括以下步骤：
在反应室内提供衬底；
在衬底表面上沉积材料，其中沉积步骤包括：
使前体流入反应室；并且
将前体暴露于等离子体以形成沉积材料；以及
在沉积足够量的沉积材料以填充凹部之后，将沉积材料暴露于沉积后处理以使沉积材料在凹部内流动，
其中沉积材料包括碳、氧化硅、氮化硅和碳化硅中的一种或多种。
2.根据权利要求1所述的方法，其中，所述沉积步骤期间的温度为约50℃至约800℃。
3.根据权利要求1或2所述的方法，其中，所述沉积后处理包括将所述衬底加热至约50℃至约800℃的温度。
4.根据权利要求1-3中任一项所述的方法，其中，所述反应室内的压力在约100Pa和约1300Pa之间。
5.根据权利要求1或2所述的方法，其中，所述沉积后处理包括等离子体处理。
6.根据权利要求4所述的方法，其中，所述等离子体处理包括将惰性气体和/或含氮气体暴露于等离子体。
7.根据权利要求5所述的方法，其中，所述含氮气体选自由氮、NH3、N2O构成的组。
8.根据权利要求4-7中任一项所述的方法，其中，所述沉积后处理包括将所述衬底加热到约50℃至约800℃的温度。
9.根据权利要求5-8中任一项所述的方法，其中，所述反应室内的压力在约100Pa和约1300Pa之间。
10.根据权利要求1-9中任一项所述的方法，其中，所述前体包括环状结构。
11.根据权利要求1-10中任一项所述的方法，其中，所述前体包含羰基官能团。
12.根据权利要求10和11中任一项所述的方法，其中，所述环状结构选自由以下构成的组：苯；茚；环戊二烯；环己烷；吡咯；呋喃；噻吩；磷脂；吡唑；咪唑；噁唑；异噁唑；噻唑；吲哚；苯并呋喃；苯并噻吩；异吲哚；异苯并呋喃；二苯磷酰；苯并咪唑；苯并噁唑；苯并噻唑；苯并异噁唑；吲唑；苯并异噻唑；苯并三唑；嘌呤；吡啶；膦酰亚胺；嘧啶；吡嗪；哒嗪；三嗪；1,2,4,5-四嗪；1,2,3,4-四嗪；1,2,3,5-四嗪；六嗪；喹啉；异喹啉；喹喔啉；喹唑啉；辛诺林；蝶啶；酞嗪；吖啶；4aH-呫吨；4aH-噻吨；4aH-吩恶嗪；4a,10a-二氢-10H-吩噻嗪；以及咔唑。
13.根据权利要求1-12中任一项所述的方法，其中，所述前体包括一个或多个羰基以及甲基、乙基、丙基、丁基、胺基和羟基中的一个或多个。
14.根据权利要求11-13中任一项所述的方法，其中，所述羰基官能团选自由以下构成的组：醛、酮、羧酸、酯、酰胺、烯酮、酰氯和酸酐。
15.一种填充衬底表面上的凹部的方法，该方法包括以下步骤：
在反应室内提供衬底；
在衬底表面上沉积材料，其中沉积步骤包括：
使前体流入反应室；并且
将前体暴露于等离子体以形成沉积材料；以及
将沉积材料暴露于沉积后处理以使沉积材料在凹部内流动，
其中沉积材料包括碳、氧化硅、氮化硅和碳化硅中的一种或多种，并且
其中前体包含环状结构和至少一个羰基官能团。
16.根据权利要求15所述的方法，其中，所述环状结构选自由以下构成的组：苯；茚；环戊二烯；环己烷；吡咯；呋喃；噻吩；磷脂；吡唑；咪唑；噁唑；异噁唑；噻唑；吲哚；苯并呋喃；苯并噻吩；异吲哚；异苯并呋喃；二苯磷酰；苯并咪唑；苯并噁唑；苯并噻唑；苯并异噁唑；吲唑；苯并异噻唑；苯并三唑；嘌呤；吡啶；膦酰亚胺；嘧啶；吡嗪；哒嗪；三嗪；1,2,4,5-四嗪；1,2,3,4-四嗪；1,2,3,5-四嗪；六嗪；喹啉；异喹啉；喹喔啉；喹唑啉；辛诺林；蝶啶；酞嗪；吖啶；4aH-呫吨；4aH-噻吨；4aH-吩恶嗪；4a,10a-二氢-10H-吩噻嗪；以及咔唑。
17.根据权利要求15或16的方法，其中，所述羰基官能团选自由以下构成的组：醛、酮、羧酸、酯、酰胺、烯酮、酰氯和酸酐。
18.根据权利要求15-17中任一项所述的方法，其中，所述前体包括一个或多个羰基以及甲基、乙基、丙基、丁基、胺基和羟基中的一个或多个。
19.根据权利要求15-18中任一项所述的方法，其中，所述沉积后处理包括加热所述衬底和将所述沉积材料暴露于受激物质中的一个或多个。
20.根据权利要求15-18中任一项所述的方法，其中，所述沉积后处理包括在所述衬底上进行UV辐射，并将所述沉积材料暴露于受激物质。
21.根据权利要求20所述的方法，其中，UV源的范围从100nm到1000nm。
22.根据权利要求18所述的方法，其中，通过将惰性气体和/或含氮气体暴露于等离子体来形成受激物质。
23.一种用于沉积材料以填充衬底表面上的凹部的系统，该系统包括：
反应室；以及
控制器，用于执行权利要求1-22中任一项的沉积、暴露和沉积后处理步骤。
24.一种根据权利要求1-22中任一项所述的方法形成的结构。
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