CN114859129B

CN114859129B - Wireless multi-channel micro impedance measurement method and device

Info

Publication number: CN114859129B
Application number: CN202210791773.0A
Authority: CN
Inventors: 梁亚斌; 谭志森; 冯谦; 江勇; 张作才
Original assignee: Wuhan Institute Of Earth Observation China Seismological Bureau; Wuhan Institute Of Earthquake Engineering Co ltd
Current assignee: Wuhan Institute Of Earth Observation China Seismological Bureau; Wuhan Institute Of Earthquake Engineering Co ltd
Priority date: 2022-07-07
Filing date: 2022-07-07
Publication date: 2023-04-07
Anticipated expiration: 2042-07-07
Also published as: CN114859129A

Abstract

The invention relates to the technical field of structural health monitoring by a piezoelectric impedance method, and provides a wireless multi-channel micro impedance measurement method and device. The method comprises the following steps: selecting to enter a calibration stage or a measurement stage through a channel switching circuit, wherein the channel switching circuit comprises a 1-out-of-8 measurement channel used for accessing an object to be measured, an n-out-of-8 calibration resistor used for calibration and an n-out-of-8 feedback resistor used for feedback, performing impedance test on the object to be measured in the calibration stage through an impedance measurement circuit, performing impedance test on the object to be measured in the measurement stage, and correcting measurement data in the measurement stage according to measurement data in the calibration stage; and selecting the optimal feedback resistance value suitable for the object to be detected according to a preset rule. The invention improves the calibration resistance and the feedback resistance from the range of 16 to 1 to the range of 8 to n, thereby greatly increasing the range of the measured impedance value compared with the prior art.

Description

Wireless multi-channel micro impedance measurement method and device

Technical Field

The invention relates to the technical field of structural health monitoring by a piezoelectric impedance method, in particular to a wireless multi-channel micro impedance measuring method and a device.

Background

The piezoelectric impedance technology monitors the safety of the structure and the change of damage state information by detecting the change of impedance signals of a measured object, has higher sensitivity for monitoring early tiny damage of the structure, has the advantages of simple implementation, application to complex structures, low price of required sensors, light weight, small volume, high conversion efficiency, good long-term stability and the like. Therefore, the piezoelectric impedance technique is considered as one of the most promising nondestructive structural inspection techniques in the field of structural health monitoring.

Conventional impedance-based damage detection techniques mainly use a precision impedance analyzer for impedance measurements. However, the conventional piezoelectric impedance measuring device, i.e., the precision impedance analyzer, has the disadvantages of high price, large volume, inconvenience in carrying and measurement, and the like, so that domestic and foreign scholars begin to research and use economical, portable and small-sized miniature impedance measuring devices to replace the precision impedance analyzer for impedance detection.

The miniature impedance measuring equipment needs to be calibrated before being used, and the measurement result and the measurement effect in subsequent measurement can be seriously influenced by the quality of the calibration result. The former scholars mainly use a gain coefficient calibration method to realize independent calibration and impedance measurement of a miniature impedance measurement device. The gain coefficient calibration method mainly comprises the steps of storing different gain coefficients for different impedance measurement ranges in a single chip microcomputer in the miniature impedance measurement equipment and measuring an object to be measured by using different feedback resistors, so that the miniature impedance measurement equipment can be independently calibrated in actual use. For example, in patent document CN108562795A, entitled a solar impedance measurement system, the impedance measurement system developed by sudu, semiconductor research institute of university of chinese academy of sciences, the impedance measurement system adjusts the impedance measurement range according to the measurement result of the impedance measurement module and uses different feedback resistance values and gain coefficients, so that the measurement result is always kept within the range; for example, in patent document CN206002605U with patent name of a portable impedance measuring instrument based on STM32F105RC, the portable measuring instrument developed by tangmingyu of the university of anhui physics automatically switches to a proper feedback resistance to measure the impedance based on an STM32 single chip microcomputer according to the range of the measuring signal, and calculates the impedance value according to the measured real part and imaginary part of the impedance and the fitting function; for example, in patent document CN213780212U entitled three-terminal device impedance measuring instrument based on STM32, a three-terminal device impedance measuring instrument developed by zhao dynasty, ltd, li de instruments, selects and switches different feedback resistors according to the range of the measured impedance signal to perform impedance measurement, and calculates the final impedance value by using the gain coefficient obtained in the calibration mode.

The gain coefficient calibration method can ensure that the output voltage is controlled within the input range of a subsequent analog-digital converter, errors caused by overlarge or undersize response signals are avoided, but only the range of the impedance amplitude is considered and the influence of the impedance phase is not considered when range selection is carried out, the measured data can not be ensured to be closest to the accurate data in terms of the impedance amplitude and the curve shape, and the phenomenon of data record overflow is easy to occur, so that the measured curve is discontinuous, and the measurement result is not ideal.

In view of the above situation, the inventor of the present application has proposed a technical solution to solve the above situation in the previous patent No. CN114487971A, entitled improved micro impedance measurement self-calibration algorithm and apparatus, which comprehensively considers relative changes of impedance magnitude and impedance phase when selecting measurement data, where the selected data is the measurement data with the best calibration effect under the condition of comprehensively considering accuracy of impedance magnitude and accuracy of impedance phase. Compared with data measured by a gain coefficient calibration method, the method has the advantage that the accuracy of the impedance amplitude and the impedance phase of the selected measurement data is improved based on the traversal calculation and analysis of all the measured data. Furthermore, the measurement data selected by the patent with the best calibration effect is a complete set of measurement data, and the phenomenon of record overflow at individual frequency points can not occur, so that the obtained measurement data can be ensured to be continuous data.

However, in practice, the above patent also reveals some drawbacks: in practical use, the channel switching circuit of the patent uses a calibration resistor of 16-to-1 and a feedback resistor of 16-to-1 with the same calibration resistance value, so that for a test object, the selected measurement data with the best calibration effect is selected based on the resistance value test data of 16-to-1, and accordingly, the selected "measurement data with the best calibration effect" is limited by the preset 16 resistance values, and the selected optimal feedback resistance value can only be one of the 16 resistance values, so that when the test object needs to be replaced and the actual optimal feedback resistance value corresponding to the test object exceeds the 16 resistance value range, the patent is no longer applicable, in short, in the previous scheme, the value ranges of the calibration resistor and the feedback resistor are limited, which is not beneficial to replacing the test object with too large impedance difference, and when the test object with the impedance exceeding the value ranges of the calibration resistor and the feedback resistor appears in the test object needing to be detected, the measurement effect is no longer accurate.

In view of this, overcoming the drawbacks of the prior art is a problem to be solved urgently in the art.

Disclosure of Invention

The invention aims to solve the technical problems that the value ranges of the calibration resistor and the feedback resistor in the prior art are limited, the objects to be detected with overlarge impedance difference are not convenient to replace, when the objects to be detected with the impedance exceeding the value ranges of the calibration resistor and the feedback resistor appear in the objects to be detected, the measurement effect is not accurate any more, and the measurement result is not ideal.

The invention adopts the following technical scheme:

in a first aspect, the present invention provides a wireless multi-channel impedance micro-measurement system, including an impedance measurement circuit and a channel switching circuit, wherein:

the channel switching circuit comprises an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration and an 8-to-n feedback resistor for feedback, wherein n is a natural number which is more than or equal to 1 and less than or equal to 8;

the impedance measurement circuit is connected with the channel switching circuit and used for generating sine excitation voltage to measure the impedance of the object to be measured.

Further, the channel switching circuit further comprises a 2-to-1 switch, the impedance measuring circuit is connected with the 2-to-1 switch, one switch of the 2-to-1 switch is connected with the 8-to-1 measuring channel, the other switch of the 2-to-1 switch is connected with the 8-to-n calibrating resistor, the 8-to-1 measuring channel and the 8-to-n calibrating resistor are respectively connected with the 8-to-n feedback resistor, and the 8-to-n feedback resistor is connected with the impedance measuring circuit.

Further, when the switch connected to the n-out-of-2 calibration resistor in the 1-out-of-2 switch is turned on, a calibration phase is entered, where the calibration phase includes:

selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R _CAL Selecting the resistance of the feedback resistance of n selected by 8, and recording the selected feedback resistance value as R _FB Wherein R is _CAL =R _FB ；

Executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment _School And a first imaginary value I _School Obtaining the modulus M of the calibration resistor according to the calculation _School Calculating the gain factor GF and the system phase theta _system 。

Further, when the switch connected to the 8-of-1 measurement channel in the 2-of-1 switch is turned on, a measurement phase is entered, where the measurement phase includes:

selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to an object to be measured according to a measuring instruction of an upper computer;

executing an impedance measurement instruction, and collecting a second real part value R of the impedance measured under the working condition _{Side survey} And a second imaginary value I _{Side survey} Calculating to obtain the impedance modulus M of the object to be measured _Measuring Using gain factor GF versus impedance modulus M _Measuring Making corrections and using the system phase θ _system And correcting the impedance phase of the object to be measured.

Further, after the measurement data of the object to be measured is corrected, the upper computer further performs the following operations:

arranging all corrected data from small to large according to the size of the used feedback resistance value;

respectively calculating the change rate of the amplitude relative error of every two adjacent groups of corrected measurement data along with the change rate of the feedback resistance value and the change rate of the curve shape relative error along with the change rate of the feedback resistance value;

selecting four resistance values with the minimum amplitude relative error change rate along with the change rate of the feedback resistance values to form a candidate resistance value interval RI1, and calculating a first score of each resistance value according to the relative magnitude of the amplitude relative error change rate along with the change rate of the resistance values; selecting four resistance values with the minimum curve shape relative error change rate along with the resistance values to form a candidate resistance value interval RI2, and calculating a second score of each resistance value according to the relative size of the curve shape relative error change rate along with the resistance values;

combining the selected candidate resistance value interval RI1 and the candidate resistance value interval RI2 to form a candidate resistance value interval RI, and summing a first score of each resistance value in the candidate resistance value interval RI under the amplitude relative error change rate and a second score under the curve shape relative error change rate;

the resistance value with the highest score after summation is selected as the optimal feedback resistance value.

Further, determining whether the selected optimal feedback resistance value is unique, and if the number of the resistance values with the highest score after summation is not unique, the method further includes:

and selecting the resistance value which is closest to the resistance value at the center position of the candidate resistance value interval RI from the plurality of optimal feedback resistance values.

Further, each of the 8-out-of-n calibration resistors is in a parallel state; and each feedback resistor in the 8-selected-n feedback resistors is in a parallel state.

Further, for the 8-to-1 measurement channel, the microcontroller switches the 8-to-1 measurement channel by controlling an 8-way analog switch ADG708, so as to select 8 impedance measurement channels to be measured.

Further, for the 8-out-of-n calibration resistor, the microcontroller realizes the selection of the calibration resistor by controlling the switching of the 8-way analog switch ADG 715; for the feedback resistor of 8-out-of-n, the microcontroller realizes the selection of the feedback resistor by controlling the switching of the 8-way analog switch ADG 715.

Further, the impedance measuring circuit comprises a direct digital synthesizer, a digital-to-analog converter, an analog-to-digital converter and a digital signal processing engine; the direct digital synthesizer generates a sinusoidal excitation voltage, the sinusoidal excitation voltage is processed by the digital-to-analog converter and then excites the piezoelectric material coupled on the object to be detected to obtain a response signal of the object to be detected, and then the response signal is processed by the gain amplifier, the low-pass filter and the analog-to-digital converter and then is transmitted to the digital signal processing engine to be subjected to Fourier transform processing to obtain a real part and an imaginary part of the frequency domain impedance signal.

In a second aspect, the present invention provides a wireless multi-channel impedance micro-measurement method, including:

selecting to enter a calibration stage or a measurement stage through a channel switching circuit, wherein the channel switching circuit comprises an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration and an 8-to-n feedback resistor for feedback, and n is a natural number which is more than or equal to 1 and less than or equal to 8;

performing impedance test in a calibration stage through an impedance measurement circuit to obtain measurement data in the calibration stage; performing impedance test on an object to be measured in a measurement stage through an impedance measurement circuit to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in a calibration stage;

and selecting the optimal feedback resistance value suitable for the object to be detected according to a preset rule.

Further, the channel switching circuit further includes a 2-to-1 switch, one of the 2-to-1 switch is connected to the 8-to-1 measurement channel, the other switch of the 2-to-1 switch is connected to the 8-to-n calibration resistor, and the selecting to enter the calibration phase or the measurement phase by the channel switching circuit specifically includes:

when the switch of the 2-to-1 switch connected with the 8-to-n calibration resistor is switched on, entering a calibration stage;

and when the switch of the 1-from-2 switch connected with the 1-from-8 measurement channel is switched on, entering a measurement stage.

Further, the impedance test is performed in a calibration stage by the impedance measurement circuit, and the obtaining of the measurement data in the calibration stage specifically includes:

and selecting the resistance of the n-8-selected calibration resistor according to a setting instruction of an upper computer, and recording the selected calibration resistance as R _CAL Selecting the resistance of the 8-n selected feedback resistor, and recording the selected feedback resistance value as R _FB Wherein R is _CAL =R _FB ；

Executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment _School And a first imaginary value I _School Obtaining the modulus M of the calibration resistor according to calculation _School Calculating the gain factor GF and the system phase theta _system 。

Further, the performing, by the impedance measurement circuit, an impedance test on the object to be measured in the measurement stage to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in the calibration stage specifically includes:

executing an impedance measurement instruction, and acquiring a second real part value R of the impedance measured under the working condition _{Side survey} And a second imaginary value I _Measuring And calculating to obtain the impedance modulus M of the object to be measured _{Side survey} Using gain factor GF versus impedance modulus M _Measuring Making corrections and using the system phase θ _system And correcting the impedance phase of the object to be measured.

Further, the selecting the optimal feedback resistance value suitable for the object to be measured according to the preset rule specifically includes:

Further, for the 8-to-1 measurement channel, the microcontroller controls an 8-way analog switch ADG708 to perform channel switching on the 8-to-1 measurement channel, so as to select 8 impedance measurement channels to be measured.

Further, each of the 8-n-selected calibration resistors is in a parallel state; and each feedback resistor in the 8-selected-n feedback resistors is in a parallel state.

In a third aspect, the present invention provides a wireless multi-channel impedance micro-measuring device, for implementing the wireless multi-channel impedance micro-measuring method described in the second aspect, the device includes: at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores instructions executable by the at least one processor for performing the wireless multi-channel micro-impedance measurement method of the second aspect.

In a fourth aspect, the present invention also provides a non-transitory computer storage medium storing computer-executable instructions for execution by one or more processors for performing the wireless multi-channel micro-impedance measurement method of the second aspect.

On the basis of the patent of the previous application, the invention improves the circuit structure, so that the range of the calibration resistance and the feedback resistance is improved from 16 to 1 to 8 to n, and the range of the measured impedance value is greatly increased compared with the prior art. Preferably, the n-selected-8 resistors are all arranged in parallel, so that a resistor combination scheme with a smaller resistance value can be combined on the basis of the 8 resistors, thereby being suitable for impedance measurement with a smaller value. The resistance measuring device can adapt to the impedance measurement of most objects to be measured after the resistance selection range is greatly expanded, and the situation that the impedance of a certain object to be measured is too large to influence the measurement effect due to the fact that the difference between the impedance of the certain object to be measured and the impedance of the preset calibration resistor and the impedance of the feedback resistor in a plurality of objects to be measured is too large is avoided.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below. It is obvious that the drawings described below are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.

FIG. 1 is a schematic diagram of a prior art measurement circuit;

fig. 2 is a schematic diagram of a measurement circuit of a wireless multi-channel micro impedance measurement system according to embodiment 1 of the present invention;

fig. 3 is a functional block diagram of a front-end measurement unit provided in embodiment 1 of the present invention;

fig. 4 is a flowchart of a wireless multi-channel impedance micro-measurement method according to embodiment 2 of the present invention;

FIG. 5 is a flowchart of step 100 provided in embodiment 2 of the present invention;

FIG. 6 is a flowchart of an extension of step 200 provided in embodiment 2 of the present invention;

fig. 7 is a schematic diagram of an example architecture of a wireless multi-channel impedance measurement method according to embodiment 2 of the present invention;

fig. 8 is an example of a gain coefficient table of a gain coefficient calibration method according to embodiment 3 of the present invention;

fig. 9 is a flowchart of calculation of a conventional gain factor calibration method according to embodiment 3 of the present invention;

fig. 10 shows the impedance magnitude measurement result of a gain factor calibration method provided in embodiment 3 of the present invention;

fig. 11 is a schematic flowchart of a wireless multi-channel impedance micro-measurement method according to embodiment 3 of the present invention;

fig. 12 is a table of the quadrant correction relationship of impedance phase provided in embodiment 3 of the present invention;

FIG. 13 is a table of the ranking scores of the calculation indexes of the measurement method according to the embodiment 3 of the present invention;

fig. 14 is an impedance magnitude measurement result of a measurement method provided in embodiment 3 of the present invention;

fig. 15 is an impedance phase measurement result of a measurement method provided in embodiment 3 of the present invention;

FIG. 16 is a graph comparing the impedance magnitude measurements of a measurement method provided in embodiment 3 of the present invention with a conventional gain factor calibration method;

FIG. 17 is a graph comparing the measured impedance magnitude data and the measured impedance magnitude data with the accurate data according to the two methods provided in example 3 of the present invention;

fig. 18 is a schematic structural diagram of a wireless multi-channel micro impedance measurement device provided in embodiment 4 of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

Before describing the embodiments of the present invention, it should be noted that the inventor of the present invention has previously applied for a patent with patent number CN114487971A and a patent name related to an improved micro impedance measurement self-calibration algorithm and apparatus, in this patent of the previous application, the foot point of the solution is mainly how to select the optimal feedback resistance, which is the calibration resistance of the micro impedance measurement apparatus most suitable for the measurement object, and the selected optimal feedback resistance can be used to help the micro impedance measurement apparatus to perform calibration and measurement. The aforementioned patent has described in more detail the selection of the optimal feedback resistance, and the circuit used in practice is shown in fig. 1. The left part of fig. 1 is a functional structure block diagram of an impedance measuring circuit. The right part of the figure 1 is a channel switching circuit, to-be-tested impedances are connected to Z1-Z8 ends (corresponding to 8 measuring channels), a microcontroller controls 8 analog switches ADG708 (U4) (low-voltage multiplexer) to realize S1-S8 switch switching control, and then channel switching is carried out on Z1-Z8, and finally selection of 8 impedance to-be-tested channels is realized. R1~ R16 are 16 embedded calibration resistances, and the microcontroller realizes the selection to the calibration resistance through the switching of 16 way analog switch ADG706 (U3) S1~ S16 switches of control. F1-F16 are embedded 16 feedback resistors, and the microcontroller realizes the selection of the feedback resistors by controlling the switching of 16-path analog switches ADG706 (U5) S1-S16. In the figure, cx, mx, and Fx are registers, and 16 resistors are controlled by a four-bit register. In the calibration stage, the microcontroller controls the U2 switch to be switched to S1, in the measurement stage, the microcontroller controls the U2 switch to be switched to S2, and specific measurement is carried outThe scheme is described in detail in the following embodiments, which are not repeated herein. It should be noted that, in the previously configured circuit, the channel switching circuit uses a 16-to-1 calibration resistor and a 16-to-1 feedback resistor, so that the impedance of the object to be measured which is suitable for measurement is also within the range of the 16 calibration resistors (or feedback resistors). Therefore, when the impedance of the object to be measured exceeds the range, the measurement effect is inaccurate, for example, originally, a batch of objects to be measured needs to be subjected to impedance measurement, and the impedance range of the objects to be measured is also approximately known, so that 16 resistance values which are increased according to a certain gradient are set, the range of the resistance values is consistent with or slightly exceeds the approximately known impedance range, and a set of calibration resistance and a set of feedback resistance are set through the 16 impedance values to perform impedance measurement on the batch of objects to be measured, so that the set of calibration resistance and the set of feedback resistance designed for a single batch of objects to be measured are useful and accurate, but when a new object to be measured appears, for example, another batch of objects has a smaller impedance value and exceeds the minimum value of the impedance range set before, the previous set of calibration resistance and the previous feedback resistance cannot be subjected to accurate measurement. Based on this practical application scenario, the inventor has considered that the channel switching circuit in fig. 1 is modified, the calibration resistance and the feedback resistance of 16 to 1 are changed into an 8 to n mode, and the resistances of 8 to n are all in parallel, so that only 8 resistance values increasing according to a certain gradient are needed to combine 2 resistors ⁸ The resistance value of-1 =255 is greatly increased, and the principle of the resistance value reduction after the resistors are connected in parallel is particularly suitable for a new object to be measured with impedance smaller than the original range, and the measurement gradient of the impedance is reduced under 255 diversified combinations, so that the final measurement effect is more accurate.

Example 1:

embodiment 1 of the present invention provides a wireless multi-channel micro impedance measurement system, as shown in fig. 2, which is a schematic diagram of a measurement circuit of the system. The measuring circuit comprises: impedance measurement circuit and channel switching circuit, fig. 2 left side is impedance measurement circuit, and the right side is channel switching circuit, wherein: the channel switching circuit comprises an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration and an 8-to-n feedback resistor for feedback, wherein n is a natural number which is more than or equal to 1 and less than or equal to 8; the impedance measuring circuit is connected with the channel switching circuit and used for generating sine exciting voltage to measure the impedance of the object to be measured.

It should be noted that the wireless multi-channel micro impedance measurement system of the embodiment adopts a design method of the upper computer and the lower computer, and mainly comprises a front-end measurement unit of the lower computer and a measurement and control analysis platform of a remote server of the upper computer. As shown in fig. 3, the front-end measurement unit is a functional module block diagram, and the front-end measurement unit mainly includes four functional modules: (1) a microcontroller module; (2) an impedance measurement module; (3) a communication module; and (4) a power supply module. The connection block diagram among the functional modules is shown in fig. 3, wherein the microcontroller module mainly realizes the measurement and acquisition of the impedance signal of the structure/object to be measured by issuing an excitation instruction and feeding back and recovering data of the impedance measurement module; the communication module is preferably a wireless communication module and is used for establishing 4G data communication between the whole front-end measuring unit and the remote server measurement and control analysis platform, so that the control of the remote platform on the front-end measuring unit and the data return of the impedance measuring signal are realized; the power supply module is mainly used for providing stable direct-current voltage input for each functional module of the front-end measuring unit and guaranteeing normal work of the front-end measuring unit. Through the design of debugging repeatedly, AD5933 impedance measurement chip is selected for use to this front end measuring unit' S impedance measurement module, and the microcontroller module adopts the STM32 chip, and wireless communication module uses WH-LTE-7S4 module, and power module converts 12V direct current voltage into 7V and 3.3V respectively, is used for wireless communication module power supply respectively to and microprocessor STM32 and the power supply of impedance measurement AD5933 chip.

The measurement circuit shown in fig. 2 is also a measurement circuit used by the impedance measurement module of this embodiment, the channel switching circuit on the right side of the measurement circuit further includes a 1-from-2 switch (U2), the impedance measurement circuit is connected to the 1-from-2 switch, one of the 1-from-2 switches is connected to the 1-from-8 measurement channel (U4), the other switch of the 1-from-2 switch is connected to the n-from-8 calibration resistor (U3), the 1-from-8 measurement channel and the n-from-8 calibration resistor are respectively connected to the n-from-8 feedback resistor (U5), and the n-from-8 feedback resistor is connected to the impedance measurement circuit. In addition, U1 and U6 are both connected with a bias resistor at one end and used for ensuring that the signal is not distorted when reaching the peak value. The settings of 50k omega, 47nF, 20k omega, etc. are used to adjust the amplitude range of the signal so that the final output signal more easily falls within the acquisition range of the ADC (analog to digital converter).

In this embodiment, the impedance measuring circuit on the left side of fig. 2 includes (i.e., the AD5933 chip is internally integrated with) a direct digital synthesizer, a digital-to-analog converter (DAC), an analog-to-digital converter (ADC), and a digital signal processing engine; the direct digital synthesizer generates a sinusoidal excitation voltage up to 100kHz, the sinusoidal excitation voltage is processed by the digital-to-analog converter and excites the piezoelectric material coupled on the object to be detected to obtain a response signal of the object to be detected, and then the response signal is subjected to a series of processing operations by the gain amplifier (PGA), the Low Pass Filter (LPF) and the analog-to-digital converter (ADC) and then is transmitted to the digital signal processing engine (DSP) to be subjected to Fourier transform (DFT) processing to obtain a real part and an imaginary part of the frequency domain impedance signal. Note that, in the drawings: the internal oscillator is used for providing clock frequency for the direct digital synthesizer, so that the accuracy of a Fourier transform result is ensured, and frequency shift errors are reduced. The temperature sensor is used for measuring the temperature of the chip and providing a reference temperature. The low pass filter LPF is used for filtering the signal; the gain amplifier PGA is used to amplify a signal.

In the preferred embodiment, each of the 8-out-of-n calibration resistors is in a parallel state; each feedback resistor in the 8-out-of-n feedback resistors is in a parallel state. In a parallel state, the principle that the resistance value is reduced after the resistors are connected in parallel is very applicable to detection of a new object to be measured with the resistance value smaller than an original range, for example, the originally estimated resistance range of a batch of objects to be measured is 1k omega-8 k omega, 8k omega 8230, 8k omega calibration resistors are arranged in parallel and 8 n-selection switches are arranged according to a circuit shown in fig. 2 to realize the parallel state of the 8 n-selection calibration resistors and the 8 n-selection feedback resistors, so that the originally predicted impedance of the objects to be measured of 1k omega-8 k omega can be accurately measured during measurement, a smaller-value impedance can be measured after parallel connection to expand an accurate measurement range, and even if the impedance of the next batch of objects to be measured is smaller than the originally predicted minimum value of 1k omega, the measurement is not influenced, and the troublesome replacement of the calibration resistors and the feedback resistors suitable for measurement is not required. In addition, under the parallel combination, the gradient which is originally separated by 1k omega is also reduced, and the final measurement effect is more accurate while the total measurement range is increased. It should be noted that the above numerical values are only examples and are not limiting.

In the preferred embodiment, for the 8-to-1 measurement channel, the microcontroller switches the 8-to-1 measurement channel by controlling the 8-way analog switch ADG708, so as to select 8 impedance measurement channels to be measured. For the 8-out-of-n calibration resistor, the microcontroller realizes the selection of the calibration resistor by controlling the switching of an 8-way analog switch ADG715 (a low-voltage serial eight-bit switch); for the feedback resistor of 8-out-of-n, the microcontroller realizes the selection of the feedback resistor by controlling the switching of the 8-way analog switch ADG 715. In the case of a pure resistor, the impedance phase angle is 0 °, and thus the impedance value is a resistance value.

Referring to fig. 2, when the switch connected to the 8-out-of-1 calibration resistor in the 2-out-of-1 switch of the present embodiment is turned on, that is, the switch in U2 is turned on at the left side S ₁ When switching on and off, entering a calibration stage, wherein the calibration stage comprises: selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R _CAL Selecting the resistance of the 8-n selected feedback resistor, and recording the selected feedback resistance value as R _FB Wherein R is _CAL =R _FB (ii) a Executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment _School And a first imaginary value I _School Obtaining the modulus M of the calibration resistor according to the calculation _School Calculating the gain factor GF and the system phase theta _system . When the switch connected with the 8-from-1 measuring channel in the 2-from-1 switch is turned on, namely the switch on right side S in U2 ₂ When switching on and switching off, entering a measuring stage, wherein the measuring stage comprises the following steps: selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to an object to be measured according to a measuring instruction of an upper computer; executing an impedance measurement instruction, and acquiring a second real part value R of the impedance measured under the working condition _Measuring And a second imaginary value I _Measuring Calculating to obtain the impedance modulus M of the object to be measured _Measuring Using gain factor GF versus impedance modulus M _Measuring Making corrections and using the system phase θ _system And correcting the impedance phase of the object to be measured.

The above is a measurement process, and when the measurement is specifically performed, it is necessary to select a plurality of (or all, as required, selected) levels of calibration resistance values and feedback resistance values to perform measurement and correct the measured data. After correcting the measurement data of the object to be measured, the upper computer further performs the following operations: arranging all corrected data from small to large according to the size of the used feedback resistance value; respectively calculating the change rate of the amplitude relative error of every two adjacent groups of corrected measurement data along with the change rate of the feedback resistance value and the change rate of the curve shape relative error along with the change rate of the feedback resistance value; selecting four resistance values with the minimum amplitude relative error change rate along with the change rate of the feedback resistance values to form a candidate resistance value interval RI1, and calculating a first score of each resistance value according to the relative magnitude of the amplitude relative error change rate along with the change rate of the resistance values; selecting four resistance values with the minimum curve shape relative error change rate along with the resistance values to form a candidate resistance value interval RI2, and calculating a second score of each resistance value according to the relative size of the curve shape relative error change rate along with the resistance values; combining the selected candidate resistance value interval RI1 and the candidate resistance value interval RI2 to form a candidate resistance value interval RI, and summing a first score of each resistance value in the candidate resistance value interval RI under the amplitude relative error change rate and a second score under the curve shape relative error change rate; the resistance value with the highest score after summation is selected as the optimal feedback resistance value.

In this preferred embodiment, determining whether the selected optimal feedback resistance value is unique, and if the number of the resistance values with the highest score after the summation is not unique, further includes: and selecting the resistance value with the resistance value closest to the resistance value at the center position of the candidate resistance value interval RI from the plurality of optimal feedback resistance values. The resistance value is the most suitable calibration resistance for the measurement object. The calibration resistor may be used to aid in calibration and measurement. In the embodiment, the relative changes of the impedance amplitude and the impedance phase are comprehensively considered when selecting the measurement data, and the selected data is the measurement data with the best calibration effect under the condition of comprehensively considering the accuracy of the impedance amplitude and the accuracy of the impedance phase. Furthermore, the measurement data selected by the embodiment with the best calibration effect is a complete set of measurement data, and the phenomenon of record overflow at individual frequency points is avoided, so that the obtained measurement data can be ensured to be continuous data.

In summary, the present invention improves the circuit structure based on the above patent application, so that the calibration resistance and the feedback resistance are improved from the range of 16 to 1 to the range of 8 to n, thereby greatly increasing the range of the measured impedance value compared with the previous one. Preferably, the n-selected 8 resistors are all arranged in parallel, so that a resistor combination scheme with a smaller resistance value can be combined on the basis of the 8 resistors, and the impedance measurement with a smaller value is adapted. The resistance measuring device can adapt to the impedance measurement of most objects to be measured after the resistance selection range is greatly expanded, and the situation that the impedance of a certain object to be measured is too large to influence the measurement effect due to the fact that the difference between the impedance of the certain object to be measured and the impedance of the preset calibration resistor and the impedance of the feedback resistor in a plurality of objects to be measured is too large is avoided.

Example 2:

corresponding to the wireless multi-channel micro impedance measurement system in embodiment 1, embodiment 2 of the present invention provides a wireless multi-channel micro impedance measurement method. As shown in fig. 4, the method includes the steps of:

step 100 (correction data collection phase): selecting to enter a calibration stage or a measurement stage through a channel switching circuit, and carrying out impedance test in the calibration stage through an impedance measurement circuit to obtain measurement data in the calibration stage; and performing impedance test on the object to be measured in the measurement stage through the impedance measurement circuit to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in the calibration stage. In this step, the channel switching circuit includes an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration, and an 8-to-n feedback resistor for feedback, where n is a natural number greater than or equal to 1 and less than or equal to 8; in addition, the channel switching circuit further comprises a 1-from-2 switch, one of the 1-from-2 switches is connected with the 1-from-8 measurement channel, and the other switch of the 1-from-2 switch is connected with the n-from-8 calibration resistor; when the switch of the 2-to-1 switch connected with the 8-to-n calibration resistor is switched on, entering a calibration stage; and when the switch of the 1-from-2 switch connected with the 1-from-8 measurement channel is switched on, the measurement stage is started.

Step 200 (optimal feedback resistance value selection stage): and selecting the optimal feedback resistance value suitable for the object to be detected according to a preset rule.

Specifically, referring to fig. 5, in step 100 of this embodiment, performing an impedance test in a calibration stage through an impedance measurement circuit, and acquiring measurement data in the calibration stage specifically includes:

step 101: selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R _CAL Selecting the resistance of the feedback resistance of n selected by 8, and recording the selected feedback resistance value as R _FB Wherein R is _CAL =R _FB 。

Step 102: executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment _School And a first imaginary value I _School Obtaining the modulus M of the calibration resistor according to the calculation _School Calculating the gain factor GF and the system phase theta _system 。

In step 100 of this embodiment, performing an impedance test on an object to be measured in a measurement stage by using an impedance measurement circuit to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in a calibration stage specifically includes:

step 103: and selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to the object to be measured according to the measuring instruction of the upper computer.

Step 104: executing an impedance measurement instruction, and acquiring a second real part value R of the impedance measured under the working condition _Measuring And a second imaginary value I _Measuring And calculating to obtain the impedance modulus M of the object to be measured _Measuring Using gain factor GF to the modulus of the impedance M _Measuring Making corrections and using the system phase θ _system And correcting the impedance phase of the object to be measured.

For an object to be measured, a plurality of different calibration resistance values/feedback resistance values are selected, and the operation of step 100 is repeated to obtain a plurality of sets of measurement data and corrected data, and then the step 200 can be added.

Referring to fig. 6, in the present embodiment, the step 200 can be subdivided into the following steps (the following steps are also the preset rules described in the step 200).

Step 201: all the corrected data are arranged from small to large according to the size of the feedback resistance value used. In a certain implementation process, the object to be measured may be calibrated and measured using different feedback resistance values based on the AD5933, so as to obtain calibration data in a calibration stage and measurement data in a measurement stage under multiple sets of feedback resistances.

Step 202: and respectively calculating the change rate REA _ S of the amplitude relative error along with the resistance value and the change rate RES _ S of the curve shape relative error along with the resistance value of each two groups of corrected adjacent measurement data. For example, as shown in fig. 7, in the corrected adjacent measurement data shown in fig. 7, there are four sets of data under one resistor, where the value of the character S includes four cases of Z, θ, G, and X, and Z is the impedance modulus M using the gain coefficient GF _Measuring The corrected impedance amplitude of the object to be detected is obtained, and theta is the phase theta of the system _system Impedance phase theta to object to be measured _Measuring The corrected accurate impedance phase is performed,g is the real part of the impedance of the finally corrected measurement data, X is the imaginary part of the impedance of the finally corrected measurement data, wherein the real and imaginary parts of the impedance are formed by Z and

obtained by conversion according to the formula: g = Z × cos θ, X = Z × sin θ. RES _ S and REA _ S here represent relative deviations of one entire group of data and another entire group of data, and RES _ S is represented by RES _ Z, RES _ based or based on RES in FIG. 7>

RES _ G and RES _ X, RES _ X in FIG. 7 _i-1 Represented by the resistance R _i-1 Under>

And R is _i Lower->

Relative deviation, and the like for other parameter expressions.

In step 203, selecting four resistors with the smallest change rate REA _ S of the amplitude relative error along with the resistance value to form a candidate resistor interval RI1, and calculating a first score of each resistor according to the relative magnitude of the change rate of the amplitude relative error along with the resistance value; and selecting four resistors with the minimum curve shape relative error change rate RES _ S to form a candidate resistor section RI2, and calculating a second score of each resistor according to the relative size of the curve shape relative error change rate RES _ S.

In the example shown in fig. 7, in the selection process, the magnitude relative error rate of change with the resistance value and the curve shape relative error rate of change with the resistance value are sorted around the four dimensions of Z, θ, G and X; in an optional implementation manner, the ranking of one or more items may be selected for weighted calculation to obtain a final ranking result. In embodiment 3 of the present invention, an example of a solution that directly adopts a Z single dimension as a sequence for calculating a change rate of an amplitude relative error with a resistance value will also be presented, and details are not repeated here.

In step 204, the selected candidate resistive segment RI1 and the candidate resistive segment RI2 are merged to form the candidate resistive segment RI, and a first score of each resistance in the candidate resistive segment RI at the amplitude change rate and a second score of each resistance in the curve shape change rate are summed.

A specific example of a corresponding calculation method may refer to the architectural diagram presented in fig. 7; and corresponding implementation details will be also specifically set forth in the following expanded embodiments of the present invention.

In step 205, the resistor with the highest score after summation is selected as the best feedback resistor.

The resistance is the calibration resistance of the miniature impedance measuring device which is most suitable for the measuring object. The calibration resistor can be used to help the miniature impedance measuring device to calibrate and measure.

The embodiment of the invention comprehensively considers the relative change of the impedance amplitude and the impedance phase when selecting the measurement data, and the selected data is the measurement data with the best calibration effect under the condition of comprehensively considering the precision of the impedance amplitude and the precision of the impedance phase.

Furthermore, the measurement data with the best calibration effect selected by the invention is a complete set of measurement data, the phenomenon of record overflow on individual frequency points can not occur, and the obtained measurement data can be ensured to be continuous data.

In the embodiment of the present invention, in step 205, a complex situation may also occur, that is, it is determined whether the selected optimal feedback resistor is unique, and if the number of the resistors with the highest score after the summation is not unique, the method further includes:

and selecting the resistor with the corresponding resistance value closest to the resistance value at the center position of the candidate resistor section RI from the plurality of optimal feedback resistors.

For each coefficient in step 100, wherein the gain coefficient GF and the system phase are calculated

The calculation formula is as follows:

GF=(1/R _cal )/M _school ；（1）

θ _system =arctan(I _School /R _School )×180°/π；（2）

R _cal The resistance value of the calibration resistor is a known value;

the impedance modulus of the calibration resistor measured in the calibration stage; I.C. A _School For the imaginary part of the impedance, R, of the calibration resistance measured during the calibration phase _School The real part of the impedance of the calibration resistor measured in the calibration stage.

Correspondingly, the gain factor GF is used to match the impedance modulus M _{Side survey} Making corrections and using the system phase θ _system Correcting the impedance phase of the object to be detected, wherein the specific correction formula is as follows:

Z=(1/GF)/M _{side survey} =(M _School ×R _cal ) /M _{Side survey} ；（3）

θ _Measuring =arctan(I _Measuring /R _{Side survey} )×(180°/π)；（4）

Wherein the content of the first and second substances,

the impedance module value of the object to be measured is measured in the measuring stage; z is the impedance modulus M using the gain factor GF _{Side survey} Correcting the impedance amplitude of the object to be detected; I.C. A _Measuring The impedance imaginary part of the object to be measured is measured in the measuring stage; r _{Side survey} The real impedance part of the object to be measured is measured in the measuring stage; theta.theta. _Measuring The impedance phase is calculated according to the real impedance part of the object to be measured and the imaginary impedance part of the object to be measured which are measured in the measuring stage.

Wherein, the range of the arctan function is [ -pi/2, pi/2]And the range of the actual phase is [ -pi, pi]Thus the measured system phase θ _system And theta _{Side survey} Quadrant correction of the phase is required;

the finally used phase data also needs to be corrected by a system phase, and the formula of the system phase correction is as follows: θ = θ _Measuring -θ _system (ii) a (5) where θ is the precise impedance phase. According to the formula, the miniature impedance measuring equipment can be calibrated and used for measurement, and the measurement data of the miniature impedance measuring equipment is corrected into accurate data, so that the miniature impedance measuring equipment can be used for high-precision measurement.

The quadrant correction comprises:

first quadrant, θ _x =arctan(I _i /R _i )×(180°/π)；

Second quadrant, θ _x =arctan(I _i /R _i )×(180°/π)+180°；

Third quadrant, θ _x =arctan(I _i /R _i )×(180°/π)+180°；

Fourth quadrant, θ _x =arctan(I _i /R _i )×(180°/π)+360°；

Where x is "test" or system and the corresponding i is "calibration" or "test".

In step 202, a rate of change of amplitude relative error with resistance value REA _ S and a rate of change of curve shape relative error with resistance value RES _ S of each two sets of adjacent measurement data are calculated, respectively, in combination with the embodiment of the present invention, which also provides a specific implementation manner in the embodiment of the present invention, including:

（6）

（7）

wherein the content of the first and second substances,

(ii) a m is the number of the measuring frequency points; />

Is the feedback resistance R of the jth position _FB Measured calibration dataThe expression S, i.e., S = Z, </r > may be replaced by the impedance magnitude, impedance phase, real impedance part and imaginary impedance part data, respectively>

G or X.

Wherein the content of the first and second substances,

is the feedback resistance R of the jth position _FB Averaging the measured corrected measurement data; Δ R is a difference between the resistance values of the feedback resistor at the j +1 th position and the feedback resistor at the j th position; />

The standard deviation of the corrected measurement data measured at the feedback resistance of the jth position; REA _ S _j The corrected measured data amplitude value relative error change rate value of the feedback resistor at the jth position; CCD _ S _j The cross-correlation distance between the measurement data of the feedback resistance at the jth position and the measurement data of the feedback resistance at the (j + 1) th position; RES _ S _j The corrected shape of the measurement data curve for the feedback resistor at the jth position has a value relative to the error rate of change, S = Z, < >>

G or X. Wherein, I above is the imaginary impedance part returned by the measurement, and I is not the final correct imaginary impedance part; where X is the correct imaginary impedance after final correction; m is the impedance modulus, Z is the impedance amplitude obtained after final correction, and M and Z can be obtained by GF conversion.

In combination with the embodiment of the present invention, there is also provided a score calculation method for a feedback resistor, where the corresponding calculation formula is as follows:

（8）

P ^j score of feedback resistance for jth position;

the first score of the feedback resistance of the jth position under the REA _ S index; />

A second score for the feedback resistance at the jth location under the RES _ S index; alpha is alpha ₁ A scoring weight for the measured data amplitude versus error rate; alpha is alpha ₂ A scoring weight for the shape of the measurement data curve versus the rate of change of error; alpha is alpha ₁ And alpha ₂ Setting according to the selection requirement bias of the measurement data amplitude and the curve shape; s = Z,/or>

G or X, in embodiments of the invention, optionally α ₁ =α ₂ =0.5。/>

For the above score calculation, it should be noted that, in the present invention, the resistance with the minimum calculated amplitude relative error change rate is the resistance with the highest amplitude precision; and the resistance with the minimum curve shape relative error change rate is the resistance with the highest curve shape precision. Therefore, we need to select the resistor with the minimum amplitude relative error change rate and the minimum curve shape relative error change rate, wherein the higher the score of the resistor with the minimum amplitude relative error change rate index and the curve shape relative error change rate index ranked more forward, we can select the resistor with the highest score, i.e. the resistor with the minimum amplitude relative error change rate and curve shape error change rate, i.e. the resistor with the maximum comprehensive amplitude precision and curve shape precision can be selected. In practical situations, there may be situations where the individual resistances have only a first score or only a second score, where if only the first score is present, the relative second score is processed as zero by the score, and similarly if only the second score is present, the relative first score is processed as zero by the score, thereby similarly completing the summation process; in this case, the resistors having the first score and the second score are more likely to be selected, and the resistor having the highest summation result becomes the finally selected resistor. In addition, because the rate of change of the magnitude error and the rate of change of the shape error may not be simultaneously minimized. For example, the feedback resistance with the smallest rate of change of magnitude error (the first score is relatively high), but it is possible that the rate of change of shape error is relatively large (the second score is relatively low, even 0- -i.e., not listed in the rank proposed by the present embodiment). Both the amplitude error change rate and the curve shape error change rate are selected indexes, and the emphasis selection is performed according to the weight coefficients alpha 1 and alpha 2. The resistance with the highest score is selected to select the best resistance combining the two metrics. In practice, the resistor with high data amplitude precision but low curve shape precision is also the resistor that we want to select, and the resistor can meet the practical use requirement. Only the first scoring resistances can be compared according to the logic of the present embodiment, as such resistances are also desirable. The resistance with the minimum calculated amplitude relative error change rate is the resistance with the highest amplitude precision; the resistance with the smallest calculated curve shape relative to the error rate is the resistance with the highest curve shape accuracy.

The first score and the second score can be achieved by using a conventional linear interpolation formula, which can be flexibly adjusted according to actual requirements, and as a simplest implementation, the linear interpolation formula is as follows:

wherein x1=1,2,3,4, which represents the ranking of the four resistors with the smallest rate of change of the relative error of magnitude with the change of the feedback resistance value; x2=1,2,3,4, representing the four resistor ranks where the rate of change of the curve shape with respect to error with resistance is the smallest. It will be appreciated that this formula is but one of many possible implementations and should not be taken as the only explanation for the definition of calculating the first and second scores described above.

Example 3:

in the field of structural health monitoring, when a micro impedance measuring device is used to perform damage monitoring based on an impedance method, a Piezoelectric ceramic Transducer (PZT) is generally connected to the micro impedance measuring device, then the PZT is attached to an object to be monitored, and then the micro impedance measuring device can automatically perform impedance measurement on the object to be monitored based on a specific algorithm. The traditional algorithm for helping the miniature impedance measuring equipment to carry out automatic measurement is a gain coefficient calibration method, and the difference between the gain coefficient calibration method and the measuring method of the invention is respectively compared in detail below.

Firstly, 25 feedback resistance values are used (by means of 8 to select n, more feedback resistance values can be used, here, 25 are taken as an example), a gain coefficient calibration method is used to measure the impedance of a bar in a frequency range of [50khz,60khz ], the gain coefficient method is an algorithm suitable for being embedded into a single chip microcomputer for use, then because the memory capacity and the calculation capacity of the single chip microcomputer are limited, the single chip microcomputer can only store the gain coefficient at a certain specific frequency point, and the frequency point of the gain coefficient cannot be fully covered, so that in the actual impedance measurement, the problem that the frequency value of the used gain coefficient is not within the range of the measured frequency interval cannot be avoided, therefore, in order to be consistent with the actual application situation, the gain coefficient at a frequency point of 10kHz is selected for use in the embodiment of the present invention, the used feedback resistance, the impedance measurement range and the gain coefficient are shown in fig. 8, the measurement module value range under the feedback resistance can be calculated according to the impedance range and the gain coefficient, and the module value range is calculated as follows (for convenience of numbering from the self-numbering system in embodiment 2 and embodiment 3, the formula 1, the formula 3, so as to browse the formula 2, the numbering from embodiment 21):

M _x =(1/GF)/Z _x =1/(GF×Z _x ) (ii) a (21) Wherein GF is the gain factor, Z _x Is the impedance amplitude, M, of the object to be measured _x Is the impedance modulus of the object to be measured;

wherein Z is _x Regarding the parameter setting of the measuring device, taking the measuring system provided in fig. 2 as an example, the output signals are:

（22）

thus, Z _x The relationship to the parameter settings of the measuring device is as follows:

（23）

substituting the formula (23) into the formulas (21) and (22) results in the following relationship:

（24）

the output voltage of the measurement device needs to satisfy a certain range, which can be obtained from the formula (24), when the measurement parameter setting is fixed (e.g. Programmable Gain Amplifier (PGA), and input voltage

Fixed), may be based on the gain factor GF, the feedback resistance value R _FB Calculating to obtain the module value measuring ranges corresponding to different feedback resistors, and M _max And M _min 。

The measurement flow of the gain factor calibration method is shown in fig. 9.

Firstly, the feedback resistor switched to the minimum gear (for example, the feedback resistor 470 Ω used here) performs impedance measurement on the object to be measured at a first frequency point (for example, 50 kHz), returns to the measured module value, then judges whether the measured module value is within the module value range of the feedback resistor 470 Ω, if not, switches to the feedback resistor of the next gear to perform re-measurement and judgment until the measured module value is within the module value range of the feedback resistor used, and then calculates the impedance value according to the gain coefficient under the feedback resistor of the gear:

Z=(1/GF)/M _x =1/(GF×M _x ) (ii) a Wherein M is a measured modulus value;

and if the module values measured by the frequency point under the feedback resistors of all the gears are not in the corresponding module value range, marking the frequency point to record overflow. And finally, recording and outputting the calculated impedance value, and repeating the process to measure the impedance of the next frequency point.

The measurement result of the above-mentioned prior art gain factor calibration method is shown in fig. 10, and it can be seen that there is a certain error between the measured data and the accurate data, and it can be seen that there are recording overflows between points 1 and 2 (represented as two adjacent points on the measured data line in the figure, and an interruption of the measured data occurs between them), between

points

3 and 4, between points 5 and 6, and between

points

7 and 8, which are marked in fig. 10, resulting in discontinuity of the measured impedance magnitude curve. Moreover, the algorithm only returns impedance magnitude data, and does not consider and return impedance phase data. Therefore, a high-precision measurement method is needed in which the measurement data are continuous and the impedance amplitude and impedance phase data can be returned simultaneously.

Embodiment 3 of the present invention is based on the wireless multi-channel impedance measurement method proposed in embodiment 2, and further combines the existing gain coefficient calibration algorithm scenario introduced above to explain an innovative implementation process in a scenario corresponding to the technical scheme of the present invention, so as to present the improved effect of the present invention by way of comparison. The invention adopts the algorithm to carry out [50kHz,60kHz ] on the iron bar by using 25 feedback resistance values]The impedance over the frequency range is measured. Firstly, one of the feedback resistance values is selected to calibrate the miniature impedance measurement system, and the real impedance part R of the feedback resistance in the calibration stage is acquired _School And an imaginary impedance I _School Data, then the change-over switch is connected with the object to be measured for measurement, and the real part R of the impedance of the object to be measured in the measurement stage is collected _Measuring And an imaginary impedance I _Measuring And (4) data. And sequentially switching different calibration resistors to perform calibration and measurement, and repeating the processes. Feedback circuit under all calibration phasesReal part of impedance R of resistor _School And an imaginary impedance part I _School Data and corresponding real part of impedance R of object to be measured _Measuring And an imaginary impedance I _Measuring After the data is collected, all the measured data are processed and analyzed by using the measuring method of the invention, and the calculation flow chart of the algorithm is shown in fig. 11 and comprises the following steps:

in step 301, measurement data is collected and corrected according to an impedance correction formula.

Calibration phase in the correction process: z is a linear or branched member _x Position connecting a calibration resistor with the resistance value equal to that of the feedback resistor, and acquiring the impedance real part value R of the obtained calibration resistor _School And the imaginary value of the impedance I _School Then according to the calculated impedance modulus M of the calibration resistor _School Calculating the gain factor GF and the system phase theta _system The calculation formula is as in formula (1) to formula (2) in example 2.

Measurement phase in the correction process: z _x Connecting the position of the object to be measured, and collecting the returned real impedance value R of the object to be measured _Measuring And the imaginary value of the impedance I _Measuring Then calculating to obtain the impedance modulus M of the object to be measured _Measuring Finally, the gain coefficient obtained in the calibration stage is used for correcting the impedance module value of the object to be measured, and the correction formula is shown as the formula (3) in the embodiment 1; using R _{Side survey} And I _Measuring Calculating the impedance phase of the object to be measured at the measurement stage, and using the system phase theta _system For impedance phase theta _{Side survey} The correction was performed by the correction formulas (4) to (5) in example 2.

Since the range of the arctan function is [ - π/2, π/2]And the range of the actual phase is [ -pi, pi]Thus the above measured phase theta _system And theta _Measuring Quadrant correction is required, and the quadrant correction relationship of the phase is shown in fig. 12 and described in detail in embodiment 2.

According to the formula, the micro impedance measuring equipment can be calibrated and used for measurement, and the measurement data of the micro impedance measuring equipment is corrected into accurate data, so that high-precision measurement can be realized by using the micro impedance measuring equipment.

In step 302, all the corrected data are arranged from small to large according to the magnitude of the feedback resistance value used.

In step 303, the rate of change of the amplitude relative error with the resistance value REA _ S and the rate of change of the curve shape relative error with the resistance value RES _ S of each two sets of adjacent data are calculated, respectively.

And (3) calculating formulas of the change rate of the amplitude relative error of the adjacent data and the change rate of the curve shape relative error along with the resistance value, wherein the calculation formulas are shown as formulas (6) - (7).

In step 304, selecting four resistors with the minimum rate of change of the amplitude relative error along with the resistance value to form a candidate interval RI1, and calculating the score of each resistor according to the relative magnitude of the rate of change; the four resistors having the smallest rate of change in the relative error of the curve shape with respect to the resistance values are selected to form the candidate section RI2, and the score for each resistor is calculated from the relative magnitude of the rate of change, and the score for each resistor is shown in fig. 13.

In step 305, the selected candidate resistive segment RI1 and RI2 are merged to form a candidate resistive segment RI, and the score of each resistance in the candidate resistive segment RI at the amplitude change rate and the score at the curve shape change rate are summed.

In step 306, the summed resistance with the highest score is selected as the best feedback resistance.

In step 307, it is determined whether the selected optimal feedback resistance is unique, and if the number of the selected optimal feedback resistances is not unique, a resistance having a resistance value closest to the resistance value of the center position of the candidate resistance interval among the optimal feedback resistances is continuously selected.

In this experiment, the measurement results of the impedance amplitude using the measurement method of the present invention are shown in fig. 14, and the measurement results of the impedance phase are shown in fig. 15. A comparison graph of the impedance amplitude measurement results of the gain coefficient calibration method and the measurement method of the present invention is shown in fig. 16, and it can be seen that the curve obtained by measurement is discontinuous due to the overflow phenomenon during the measurement process of the gain coefficient calibration method, for example, the curve on the graph is discontinuous between

points

1 and 2, between

points

3 and 4, between points 5 and 6, and between

points

7 and 8. In addition, the relative error between the impedance amplitude data and the accurate data measured by the two methods is compared, and the comparison result is shown in fig. 17, so that the accuracy of the impedance amplitude is further improved by the measuring method, and the impedance phase data can be returned by the measuring method, thereby being beneficial to performing damage monitoring based on the impedance amplitude and the impedance phase in the field of structural health monitoring.

The embodiment of the invention comprehensively considers the relative change of the impedance amplitude and the impedance phase when selecting the measurement data, and the selected data is the measurement data with the best calibration effect under the condition of comprehensively considering the precision of the impedance amplitude and the precision of the impedance phase. Compared with the data measured by the gain coefficient calibration method, the method has the advantage that the accuracy of the selected measurement data based on the traversal calculation and analysis of all the measured data is improved in the impedance amplitude and the impedance phase. Furthermore, the measurement data with the best calibration effect selected by the invention is a complete set of measurement data, the phenomenon of record overflow on individual frequency points can not occur, and the obtained measurement data can be ensured to be continuous data.

In addition, the invention improves the calibration resistance and the feedback resistance from the range of 16 to 1 to the range of 8 to n, thereby greatly increasing the range of the measured impedance value compared with the prior art. Preferably, the n-selected-8 resistors are all arranged in parallel, so that a resistor combination scheme with a smaller resistance value can be combined on the basis of the 8 resistors, thereby being suitable for impedance measurement with a smaller value. The resistance measuring device can adapt to the impedance measurement of most objects to be measured after the resistance selection range is greatly expanded, and the situation that the impedance of a certain object to be measured is too large to influence the measurement effect due to the fact that the difference between the impedance of the certain object to be measured and the impedance of the preset calibration resistor and the impedance of the feedback resistor in a plurality of objects to be measured is too large is avoided.

Example 4:

fig. 18 is a schematic diagram of the architecture of a wireless multi-channel impedance measuring apparatus according to an embodiment of the present invention. The wireless multi-channel impedance measuring device of the present embodiment includes one or more processors 21 and a memory 22. In fig. 18, one processor 21 is taken as an example.

The processor 21 and the memory 22 may be connected by a bus or other means, and the bus connection is exemplified in fig. 18.

The memory 22, which is a non-volatile computer-readable storage medium, may be used to store non-volatile software programs and non-volatile computer-executable programs, such as the wireless multi-channel miniature impedance measurement method of embodiment 2. The processor 21 performs the wireless multi-channel micro-impedance measurement method by executing non-volatile software programs and instructions stored in the memory 22.

The memory 22 may include high speed random access memory and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid state storage device. In some embodiments, the memory 22 may optionally include memory located remotely from the processor 21, and these remote memories may be connected to the processor 21 via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.

The program instructions/modules are stored in the memory 22 and, when executed by the one or more processors 21, perform the wireless multi-channel impedance micro-measurement method of embodiment 1 described above, e.g., perform the various steps shown in fig. 4-5 described above.

It should be noted that, for the information interaction, execution process and other contents between the modules and units in the apparatus and system, the specific contents may refer to the description in the embodiment of the method of the present invention because the same concept is used as the embodiment of the processing method of the present invention, and are not described herein again.

Those of ordinary skill in the art will appreciate that all or part of the steps of the various methods of the embodiments may be performed by associated hardware as instructed by a program, which may be stored on a computer-readable storage medium, which may include: read Only Memory (ROM), random Access Memory (RAM), magnetic or optical disks, and the like.

The above description is intended to be illustrative of the preferred embodiment of the present invention and should not be taken as limiting the invention, but rather, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Claims

1. A wireless multi-channel micro impedance measurement method is characterized by comprising the following steps:

the channel switching circuit further comprises a switch (U2) from 1 to 2, the impedance measuring circuit is connected with the switch (U2) from 1, one switch of the switch (U2) from 1 is connected with the measuring channel (U4) from 1 to 8, the other switch of the switch (U2) from 1 is connected with the n calibration resistor (U3) from 8, the common output end of the measuring channel from 1 to 8 and the common output end of the n calibration resistor from 8 are respectively connected with the common input end of the n feedback resistor (U5) from 8, and the common input end and the common output end of the n feedback resistor from 8 are respectively bridged on the negative input end and the output end of the integrated amplifier (U6);

selecting an optimal feedback resistance value suitable for the object to be detected according to a preset rule; the channel switching circuit further includes a 2-to-1 switch, one of the 2-to-1 switch is connected to the 8-to-1 measurement channel, the other switch of the 2-to-1 switch is connected to the 8-to-n calibration resistor, and the entering of the calibration stage or the measurement stage through the selection of the channel switching circuit specifically includes:

when the switch of the 1-out-of-2 switch connected with the 1-out-of-8 measuring channel is switched on, entering a measuring stage;

the impedance test is performed in a calibration stage by the impedance measurement circuit, and the obtaining of the measurement data in the calibration stage specifically includes:

selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R _CAL Selecting the resistance of the 8-n selected feedback resistor, and recording the selected feedback resistance value as R _FB Wherein R is _CAL =R _FB ；

Executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment _School And a first imaginary value I _School Obtaining the modulus M of the calibration resistor according to the calculation _School Calculating the gain factor GF and the system phase theta _system ；

The impedance measurement of the object to be measured in the measurement stage by the impedance measurement circuit to obtain the measurement data in the measurement stage, and the correction of the measurement data in the measurement stage according to the measurement data in the calibration stage specifically includes:

selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to an object to be measured according to the measuring instruction of the upper computer;

executing an impedance measurement instruction, and acquiring a second real part value R of the impedance measured under the working condition _Measuring And a second imaginary value I _{Side survey} And calculating to obtain the impedance modulus M of the object to be measured _Measuring Using gain factor GF to the modulus of the impedance M _Measuring Making corrections and using the system phase θ _system Correcting the impedance phase of the object to be detected;

the selecting the optimal feedback resistance value suitable for the object to be detected according to the preset rule specifically includes:

selecting four resistance values with the minimum amplitude relative error change rate along with the feedback resistance value to form a candidate resistance value interval RI1, and calculating a first score of each resistance value according to the relative size of the amplitude relative error change rate along with the resistance value; selecting four resistance values with the minimum curve shape relative error change rate along with the resistance values to form a candidate resistance value interval RI2, and calculating a second score of each resistance value according to the relative size of the curve shape relative error change rate along with the resistance values;

selecting the resistance value with the highest score after summation as the optimal feedback resistance value;

each calibration resistor in the 8-selected-n calibration resistors is in a parallel state; each feedback resistor in the 8-selected-n feedback resistors is in a parallel state; 255 resistance values are combined through 8 resistance values which are increased progressively according to a certain gradient, the measurement range is greatly enlarged, the principle that the resistance values are reduced after the resistors are connected in parallel is adopted, the method is very suitable for new objects to be measured, the impedance of which is smaller than the original range, and the measurement gradient of the impedance is also reduced under 255 diversified combinations, so that the final measurement effect is more accurate;

when a batch of objects to be measured need to be subjected to impedance measurement and the impedance range is known, the resistance value is gradually increased according to a certain gradient in an 8-to-n mode, so that the range of the resistance value is consistent with or slightly exceeds the known impedance rangeSetting a set of calibration resistance and a set of feedback resistance through a plurality of impedance values with gradient increasing for calculating to obtain a calculation gain coefficient GF and a system phase theta _system And is used to perform impedance measurements on the batch of objects under test.

2. The method of claim 1, wherein the step of determining whether the selected optimal feedback resistance value is unique, and if the number of the resistance values with the highest score after summation is not unique, further comprises the steps of:

and selecting the resistance value with the resistance value closest to the resistance value at the center position of the candidate resistance value interval RI from the plurality of optimal feedback resistance values.

3. The method for measuring the wireless multi-channel micro-impedance according to any one of claims 1-2, wherein for the 8-to-1 measurement channel, the 8-to-1 measurement channel is switched by controlling an 8-way analog switch (ADG) 708 through a microcontroller to select 8 impedance measurement channels to be measured.

4. The method for measuring the wireless multi-channel micro-impedance according to any one of claims 1-2, wherein for the 8-to-n calibration resistor, the microcontroller selects the calibration resistor by controlling the switching of an 8-way analog switch (ADG 715); for the feedback resistor of 8-out-of-n, the microcontroller realizes the selection of the feedback resistor by controlling the switching of the 8-way analog switch ADG 715.

5. A wireless multi-channel micro-impedance measuring device, the device comprising:

at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores instructions executable by the at least one processor to perform the wireless multi-channel micro-impedance measurement method of any one of claims 1-4.