CN114859129A - Wireless multi-channel micro impedance measuring method and device - Google Patents
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Abstract
The invention relates to the technical field of structural health monitoring by a piezoelectric impedance method, and provides a wireless multi-channel micro impedance measurement method and device. The method comprises the following steps: selecting to enter a calibration stage or a measurement stage through a channel switching circuit, wherein the channel switching circuit comprises an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration and an 8-to-n feedback resistor for feedback, performing impedance test in the calibration stage through an impedance measurement circuit, performing impedance test on the object to be measured in the measurement stage, and correcting measurement data in the measurement stage according to measurement data in the calibration stage; and selecting the optimal feedback resistance value suitable for the object to be detected according to a preset rule. The invention improves the calibration resistance and the feedback resistance from the range of 16 to 1 to the range of 8 to n, thereby greatly increasing the range of the measured impedance value compared with the prior art.
Description
Technical Field
The invention relates to the technical field of structural health monitoring by a piezoelectric impedance method, in particular to a wireless multi-channel micro impedance measurement method and a wireless multi-channel micro impedance measurement device.
Background
The piezoelectric impedance technology monitors the safety of the structure and the change of damage state information by detecting the change of impedance signals of a detected object, has higher sensitivity on monitoring early tiny damage of the structure, has the advantages of simple implementation, application to complex structures, low price of required sensors, light weight, small volume, high conversion efficiency, good long-term stability and the like. Therefore, the piezoelectric impedance technology is considered to be one of the most promising structural nondestructive testing technologies in the field of structural health monitoring.
Conventional impedance-based damage detection techniques mainly use a precision impedance analyzer for impedance measurements. However, the conventional piezoelectric impedance measuring device, i.e., the precision impedance analyzer, has the disadvantages of high price, large volume, inconvenience in carrying and measurement, and the like, so that domestic and foreign scholars begin to research and use economical, portable and small-sized miniature impedance measuring devices to replace the precision impedance analyzer for impedance detection.
The miniature impedance measuring equipment needs to be calibrated before being used, and the measurement result and the measurement effect in subsequent measurement can be seriously influenced by the quality of the calibration result. The former scholars mainly use a gain coefficient calibration method to realize independent calibration and impedance measurement of a miniature impedance measurement device. The gain coefficient calibration method mainly comprises the steps of storing different gain coefficients for different impedance measurement ranges in a single chip microcomputer in the miniature impedance measurement equipment and measuring an object to be measured by using different feedback resistors, so that the miniature impedance measurement equipment can be independently calibrated in actual use. For example, in patent document CN108562795A entitled solar impedance measurement system, the impedance measurement system developed by sudu, semiconductor research institute of university of chinese academy of sciences, the impedance measurement system adjusts the impedance measurement range according to the measurement result of the impedance measurement module and uses different feedback resistance values and gain coefficients, so that the measurement result is always kept within the range; for example, in patent document CN206002605U with patent name of a portable impedance measuring instrument based on STM32F105RC, the portable impedance measuring instrument developed by tangmingyu of the university of anhui physics automatically switches to an appropriate feedback resistor to measure impedance according to the range of a measuring signal based on an STM32 single chip microcomputer, and calculates an impedance value according to the measured real part and imaginary part of the impedance and fitting a fitting function; for example, in patent document CN213780212U entitled STM 32-based three-terminal device impedance measuring instrument, a three-terminal device impedance measuring instrument developed by zhao dynasty, ltd, li de instruments, selects and switches different feedback resistors according to the range of the measured impedance signal to measure the impedance, and calculates the final impedance value by using the gain factor obtained in the calibration mode.
The gain coefficient calibration method can ensure that the output voltage is controlled within the input range of a subsequent analog-digital converter, errors caused by overlarge or undersize response signals are avoided, but only the range of the impedance amplitude is considered and the influence of the impedance phase is not considered when range selection is carried out, the measured data can not be ensured to be closest to the accurate data in terms of the impedance amplitude and the curve shape, and the phenomenon of data record overflow is easy to occur, so that the measured curve is discontinuous, and the measurement result is not ideal.
In view of the above situation, the inventor of the present application has proposed a solution to this situation in the previous patent No. CN114487971A with the patent name of an improved miniature impedance measurement self-calibration algorithm and apparatus, which comprehensively considers the relative changes of the impedance amplitude and the impedance phase when selecting the measurement data, where the selected data is the measurement data with the best calibration effect under the comprehensive consideration of the accuracy of the impedance amplitude and the accuracy of the impedance phase. Compared with data measured by a gain coefficient calibration method, the method has the advantage that the accuracy of the impedance amplitude and the impedance phase of the selected measurement data is improved based on the traversal calculation and analysis of all the measured data. Furthermore, the measurement data selected by the patent with the best calibration effect is a complete set of measurement data, and the phenomenon of record overflow at individual frequency points can not occur, so that the obtained measurement data can be ensured to be continuous data.
However, after practical use, the above patent also reveals some drawbacks: in practical use, the channel switching circuit of the patent uses a calibration resistor of 16-to-1 type and a feedback resistor of 16-to-1 type having the same calibration resistance value, so that for a test object, the selected measurement data with the best calibration effect is selected based on the test data of the resistance value of 16-to-1 type, and accordingly, the selected "measurement data with the best calibration effect" is limited by the preset 16 resistance values, and the selected optimal feedback resistance value can only be one of the 16 resistance values, so that when the object to be tested needs to be replaced and the corresponding actual optimal feedback resistance value exceeds the 16 resistance value range, the patent is no longer applicable, in short, in the previous scheme, the value ranges of the calibration resistor and the feedback resistor are limited, which is not beneficial to replacing the object to be tested with the object with the too large impedance difference, and when the impedance of the object to be tested exceeds the calibration resistor, When the object to be measured in the resistance value range is fed back, the measurement effect is not accurate any more.
In view of the above, overcoming the drawbacks of the prior art is an urgent problem in the art.
Disclosure of Invention
The invention aims to solve the technical problems that the value ranges of the calibration resistor and the feedback resistor in the prior art are limited, the objects to be detected with overlarge impedance difference are not convenient to replace, when the objects to be detected with the impedance exceeding the value ranges of the calibration resistor and the feedback resistor appear in the objects to be detected, the measurement effect is not accurate any more, and the measurement result is not ideal.
The invention adopts the following technical scheme:
in a first aspect, the present invention provides a wireless multi-channel impedance micro-measurement system, including an impedance measurement circuit and a channel switching circuit, wherein:
the channel switching circuit comprises an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration and an 8-to-n feedback resistor for feedback, wherein n is a natural number which is more than or equal to 1 and less than or equal to 8;
the impedance measurement circuit is connected with the channel switching circuit and used for generating sine excitation voltage to measure the impedance of the object to be measured.
Further, the channel switching circuit further comprises a 2-to-1 switch, the impedance measuring circuit is connected with the 2-to-1 switch, one switch of the 2-to-1 switch is connected with the 8-to-1 measuring channel, the other switch of the 2-to-1 switch is connected with the 8-to-n calibrating resistor, the 8-to-1 measuring channel and the 8-to-n calibrating resistor are respectively connected with the 8-to-n feedback resistor, and the 8-to-n feedback resistor is connected with the impedance measuring circuit.
Further, when the switch connected to the n-out-of-2 calibration resistor in the 1-out-of-2 switch is turned on, a calibration phase is entered, where the calibration phase includes:
selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R CAL Selecting the resistance of the 8-n selected feedback resistor, and recording the selected feedback resistance value as R FB Wherein R is CAL =R FB ;
Executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment School And a first imaginary value I School Obtaining the modulus M of the calibration resistor according to the calculation School Calculating the gain factor GF and the system phase theta system 。
Further, when the switch connected to the 8-of-1 measurement channel in the 2-of-1 switch is turned on, a measurement phase is entered, where the measurement phase includes:
selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to an object to be measured according to a measuring instruction of an upper computer;
executeAn impedance measurement instruction is used for acquiring a second real part value R of the impedance measured under the working condition Measuring And a second imaginary value I Measuring And calculating to obtain the impedance modulus M of the object to be measured Side survey Using gain factor GF to the modulus of the impedance M Measuring Making corrections and using the system phase θ system And correcting the impedance phase of the object to be measured.
Further, after the measurement data of the object to be measured is corrected, the upper computer further performs the following operations:
arranging all corrected data from small to large according to the size of the used feedback resistance value;
respectively calculating the change rate of the amplitude relative error of every two adjacent groups of corrected measurement data along with the change rate of the feedback resistance value and the change rate of the curve shape relative error along with the change rate of the feedback resistance value;
selecting four resistance values with the minimum amplitude relative error change rate along with the change rate of the feedback resistance values to form a candidate resistance value interval RI1, and calculating a first score of each resistance value according to the relative magnitude of the amplitude relative error change rate along with the change rate of the resistance values; selecting four resistance values with the minimum curve shape relative error change rate along with the resistance values to form a candidate resistance value interval RI2, and calculating a second score of each resistance value according to the relative size of the curve shape relative error change rate along with the resistance values;
combining the selected candidate resistance value interval RI1 and the candidate resistance value interval RI2 to form a candidate resistance value interval RI, and summing a first score of each resistance value in the candidate resistance value interval RI under the amplitude relative error change rate and a second score under the curve shape relative error change rate;
the resistance value with the highest score after summation is selected as the optimal feedback resistance value.
Further, determining whether the selected optimal feedback resistance value is unique, and if the number of the resistance values with the highest score after summation is not unique, the method further includes:
and selecting the resistance value with the resistance value closest to the resistance value at the center position of the candidate resistance value interval RI from the plurality of optimal feedback resistance values.
Further, each of the 8-out-of-n calibration resistors is in a parallel state; and each feedback resistor in the 8-selected-n feedback resistors is in a parallel state.
Further, for the 8-from-1 measurement channel, the microcontroller switches the 8-from-1 measurement channel by controlling an 8-way analog switch ADG708, so as to select 8 impedance measurement channels to be measured.
Further, for the 8-out-of-n calibration resistor, the microcontroller realizes the selection of the calibration resistor by controlling the switching of the 8-way analog switch ADG 715; for the feedback resistor of 8-out-of-n, the microcontroller realizes the selection of the feedback resistor by controlling the switching of the 8-way analog switch ADG 715.
Further, the impedance measuring circuit comprises a direct digital synthesizer, a digital-to-analog converter, an analog-to-digital converter and a digital signal processing engine; the direct digital synthesizer generates a sinusoidal excitation voltage, the sinusoidal excitation voltage is processed by the digital-to-analog converter and then excites the piezoelectric material coupled on the object to be detected to obtain a response signal of the object to be detected, and then the response signal is processed by the gain amplifier, the low-pass filter and the analog-to-digital converter and then is transmitted to the digital signal processing engine to be subjected to Fourier transform processing to obtain a real part and an imaginary part of the frequency domain impedance signal.
In a second aspect, the present invention provides a wireless multi-channel impedance micro-measurement method, including:
selecting to enter a calibration stage or a measurement stage through a channel switching circuit, wherein the channel switching circuit comprises an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration and an 8-to-n feedback resistor for feedback, and n is a natural number which is more than or equal to 1 and less than or equal to 8;
performing impedance test in a calibration stage through an impedance measurement circuit to obtain measurement data in the calibration stage; performing impedance test on an object to be measured in a measurement stage through an impedance measurement circuit to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in a calibration stage;
and selecting the optimal feedback resistance value suitable for the object to be detected according to a preset rule.
Further, the channel switching circuit further includes a 2-to-1 switch, one of the 2-to-1 switch is connected to the 8-to-1 measurement channel, the other switch of the 2-to-1 switch is connected to the 8-to-n calibration resistor, and the selecting to enter the calibration phase or the measurement phase by the channel switching circuit specifically includes:
when the switch of the 2-to-1 switch connected with the 8-to-n calibration resistor is switched on, entering a calibration stage;
and when the switch of the 1-from-2 switch connected with the 1-from-8 measurement channel is switched on, entering a measurement stage.
Further, the impedance test is performed in a calibration stage by the impedance measurement circuit, and the obtaining of the measurement data in the calibration stage specifically includes:
selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R CAL Selecting the resistance of the 8-n selected feedback resistor, and recording the selected feedback resistance value as R FB Wherein R is CAL =R FB ;
Executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment School And a first imaginary value I School Obtaining the modulus M of the calibration resistor according to the calculation School Calculating the gain factor GF and the system phase theta system 。
Further, the performing, by the impedance measurement circuit, an impedance test on the object to be measured in the measurement stage to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in the calibration stage specifically includes:
selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to an object to be measured according to a measuring instruction of an upper computer;
executing an impedance measurement instruction, and acquiring a second real part value R of the impedance measured under the working condition Side survey And a secondImaginary value I Measuring And calculating to obtain the impedance modulus M of the object to be measured Measuring Using gain factor GF versus impedance modulus M Measuring Making corrections and using the system phase θ system And correcting the impedance phase of the object to be measured.
Further, the selecting the optimal feedback resistance value suitable for the object to be measured according to the preset rule specifically includes:
arranging all corrected data from small to large according to the size of the used feedback resistance value;
respectively calculating the change rate of the amplitude relative error of every two adjacent groups of corrected measurement data along with the change rate of the feedback resistance value and the change rate of the curve shape relative error along with the change rate of the feedback resistance value;
selecting four resistance values with the minimum amplitude relative error change rate along with the change rate of the feedback resistance values to form a candidate resistance value interval RI1, and calculating a first score of each resistance value according to the relative magnitude of the amplitude relative error change rate along with the change rate of the resistance values; selecting four resistance values with the minimum curve shape relative error change rate along with the resistance values to form a candidate resistance value interval RI2, and calculating a second score of each resistance value according to the relative size of the curve shape relative error change rate along with the resistance values;
combining the selected candidate resistance value interval RI1 and the candidate resistance value interval RI2 to form a candidate resistance value interval RI, and summing a first score of each resistance value in the candidate resistance value interval RI under the amplitude relative error change rate and a second score under the curve shape relative error change rate;
the resistance value with the highest score after summation is selected as the optimal feedback resistance value.
Further, determining whether the selected optimal feedback resistance value is unique, and if the number of the resistance values with the highest score after summation is not unique, the method further includes:
and selecting the resistance value which is closest to the resistance value at the center position of the candidate resistance value interval RI from the plurality of optimal feedback resistance values.
Further, for the 8-to-1 measurement channel, the microcontroller controls an 8-way analog switch ADG708 to perform channel switching on the 8-to-1 measurement channel, so as to select 8 impedance measurement channels to be measured.
Further, for the 8-out-of-n calibration resistor, the microcontroller realizes the selection of the calibration resistor by controlling the switching of the 8-way analog switch ADG 715; for the feedback resistor of 8-out-of-n, the microcontroller realizes the selection of the feedback resistor by controlling the switching of the 8-way analog switch ADG 715.
Further, each of the 8-out-of-n calibration resistors is in a parallel state; and each feedback resistor in the 8-selected-n feedback resistors is in a parallel state.
In a third aspect, the present invention provides a wireless multi-channel impedance micro-measuring device, for implementing the wireless multi-channel impedance micro-measuring method described in the second aspect, the device includes: at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores instructions executable by the at least one processor for performing the wireless multi-channel micro-impedance measurement method of the second aspect.
In a fourth aspect, the present invention also provides a non-transitory computer storage medium storing computer-executable instructions for execution by one or more processors for performing the wireless multi-channel micro-impedance measurement method of the second aspect.
On the basis of the patent of the previous application, the invention improves the circuit structure, so that the range of the calibration resistance and the feedback resistance is improved from 16 to 1 to 8 to n, and the range of the measured impedance value is greatly increased compared with the prior art. Preferably, the n-selected 8 resistors are all arranged in parallel, so that a resistor combination scheme with a smaller resistance value can be combined on the basis of the 8 resistors, and the impedance measurement with a smaller value is adapted. The resistance measuring device can adapt to the impedance measurement of most objects to be measured after the resistance selection range is greatly expanded, and the situation that the impedance of a certain object to be measured is too large to influence the measurement effect due to the fact that the difference between the impedance of the certain object to be measured and the impedance of the preset calibration resistor and the impedance of the feedback resistor in a plurality of objects to be measured is too large is avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below. It is obvious that the drawings described below are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic diagram of a prior art measurement circuit;
fig. 2 is a schematic diagram of a measurement circuit of a wireless multi-channel micro impedance measurement system according to embodiment 1 of the present invention;
fig. 3 is a functional block diagram of a front-end measurement unit provided in embodiment 1 of the present invention;
fig. 4 is a flowchart of a wireless multi-channel impedance measurement method according to embodiment 2 of the present invention;
FIG. 5 is a flowchart of step 100 provided in embodiment 2 of the present invention;
FIG. 6 is a flowchart of an extension of step 200 provided in embodiment 2 of the present invention;
fig. 7 is a schematic diagram of an example architecture of a wireless multi-channel impedance measurement method according to embodiment 2 of the present invention;
fig. 8 is an example of a gain coefficient table of a gain coefficient calibration method according to embodiment 3 of the present invention;
fig. 9 is a flowchart of calculation of a conventional gain factor calibration method according to embodiment 3 of the present invention;
fig. 10 shows the impedance magnitude measurement result of a gain factor calibration method provided in embodiment 3 of the present invention;
fig. 11 is a schematic flowchart of a wireless multi-channel impedance micro-measurement method according to embodiment 3 of the present invention;
fig. 12 is a table of the quadrant correction relationship of impedance phase provided in embodiment 3 of the present invention;
fig. 13 is a table of rank scores of calculation indexes of a measurement method according to the embodiment 3 of the present invention;
fig. 14 is an impedance magnitude measurement result of a measurement method provided in embodiment 3 of the present invention;
fig. 15 is an impedance phase measurement result of a measurement method provided in embodiment 3 of the present invention;
FIG. 16 is a graph comparing the impedance magnitude measurement of a measurement method provided in embodiment 3 of the present invention with that of a conventional gain factor calibration method;
FIG. 17 is a graph comparing the measured impedance magnitude data and the measured impedance magnitude data with the accurate data according to the two methods provided in example 3 of the present invention;
fig. 18 is a schematic structural diagram of a wireless multi-channel micro impedance measurement device provided in embodiment 4 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Before describing the embodiments of the present invention, it should be noted that the inventor of the present invention has previously applied a patent with patent number CN114487971A and named as an improved micro impedance measurement self-calibration algorithm and device, in this patent of the previous application, the solution foot point is mainly on how to select the optimal feedback resistance, which is the calibration resistance of the micro impedance measurement device most suitable for the measurement object, and the calibration resistance can be used to help the micro impedance measurement device to perform calibration and measurement. The aforementioned patent has described in more detail the selection of the optimal feedback resistance, and the circuit used in practice is shown in fig. 1. The left part of fig. 1 is a functional structure block diagram of an impedance measuring circuit. The right part of the figure 1 is a channel switching circuit, impedances to be measured are connected to ends Z1-Z8 (corresponding to 8 measuring channels), and a microcontroller controls 8-channel analog switchesThe ADG708 (U4) (low-voltage multiplexer) realizes S1-S8 switch switching control, further performs channel switching on Z1-Z8, and finally realizes selection of 8 channels to be tested in impedance. R1~ R16 are embedded 16 calibration resistances, and the microcontroller realizes the selection of the calibration resistance by controlling the switching of 16-way analog switch ADG706 (U3) S1~ S16 switches. F1~ F16 are embedded 16 feedback resistors, and the microcontroller realizes the selection of the feedback resistors by controlling the switching of 16-way analog switch ADG706 (U5) S1~ S16 switches. In the figure, Cx, Mx, and Fx are registers, and 16 resistors are controlled by a four-bit register. During the calibration phase, the microcontroller controls the switch of the U2 to switch to S1, and during the measurement phase, the microcontroller controls the switch of the U2 to switch to S2. It should be noted that, in the previously configured circuit, the channel switching circuit uses a 16-to-1 calibration resistor and a 16-to-1 feedback resistor, so that the impedance of the object to be measured which is suitable for measurement is also within the range of the 16 calibration resistors (or feedback resistors). Therefore, when the impedance of the object to be measured exceeds the range, the measurement effect is inaccurate, for example, a batch of objects to be measured needs to be subjected to impedance measurement, and the impedance range is also known approximately, so that 16 resistance values which are increased gradually according to a certain gradient are set, the range of the resistance values is consistent with the approximately known impedance range or slightly exceeds the certain range, by setting a set of calibration resistor and a set of feedback resistor according to the 16 impedance values to measure the impedance of the batch of objects to be measured, the set of calibration resistor and the feedback resistor is designed to be useful and accurate for a single batch of objects to be measured, however, when a new object to be tested appears, for example, another batch of objects, has a smaller impedance value and exceeds the minimum value of the previously set impedance range, then the feedback resistance cannot be measured accurately by using the previous calibration resistance set. Based on this practical application scenario, the inventor has considered that the channel switching circuit in fig. 1 is modified, the calibration resistance and the feedback resistance of 16 to 1 are changed into an 8 to n mode, and the resistances of 8 to n are all in parallel, so that only 8 resistance values increasing according to a certain gradient are needed to combine 2 resistors 8 1=255 resistance values, which greatly increases the measurement range, and is especially suitable for new objects to be measured whose impedance is smaller than the original range because of the principle that the resistance value decreases after the resistors are connected in parallel, and the measurement gradient of the impedance also decreases under 255 diversified combinations, which enables the final measurement effect to be more accurate.
Example 1:
It should be noted that the wireless multi-channel micro impedance measurement system of the embodiment adopts a design method of the upper computer and the lower computer, and mainly comprises a front-end measurement unit of the lower computer and a measurement and control analysis platform of a remote server of the upper computer. As shown in fig. 3, the front-end measurement unit is a functional module block diagram, and the front-end measurement unit mainly includes four functional modules: (1) a microcontroller module; (2) an impedance measurement module; (3) a communication module; (4) and a power supply module. The connection block diagram among the functional modules is shown in fig. 3, wherein the microcontroller module mainly realizes the measurement and acquisition of the impedance signal of the structure/object to be measured by issuing an excitation instruction to the impedance measurement module and feeding back and recovering data; the communication module is preferably a wireless communication module and is used for establishing 4G data communication between the whole front-end measuring unit and the remote server measurement and control analysis platform, so that the control of the remote platform on the front-end measuring unit and the data return of the impedance measuring signal are realized; the power supply module is mainly used for providing stable direct-current voltage input for each functional module of the front-end measuring unit and guaranteeing normal work of the front-end measuring unit. Through the design of repeated debugging, AD5933 impedance measurement chip is selected for use to this front end measuring unit' S impedance measurement module, and the microcontroller module adopts the STM32 chip, and wireless communication module uses WH-LTE-7S4 module, and power module converts 12V direct current voltage into 7V and 3.3V respectively, is used for the wireless communication module power supply respectively to and microprocessor STM32 and the power supply of impedance measurement AD5933 chip.
The measurement circuit shown in fig. 2 is also a measurement circuit used by the impedance measurement module of this embodiment, the channel switching circuit on the right side of the measurement circuit further includes a 1-out-of-2 switch (U2), the impedance measurement circuit is connected to the 1-out-of-2 switch, one switch of the 1-out-of-2 switch is connected to the 1-out-of-8 measurement channel (U4), the other switch of the 1-out-of-2 switch is connected to the n-out-of-8 calibration resistor (U3), the n-out-of-8 measurement channel and the n-out-of-8 calibration resistor are respectively connected to the n-out-of-8 feedback resistor (U5), and the n-out-of-8 feedback resistor is connected to the impedance measurement circuit. In addition, U1 and U6 are bias resistors connected at one end, and are used for ensuring that the signal is not distorted when reaching the peak value. The settings of 50k omega, 47nF, 20k omega, etc. are used to adjust the amplitude range of the signal so that the final output signal more easily falls within the acquisition range of the ADC (analog to digital converter).
In this embodiment, the impedance measuring circuit on the left side of fig. 2 includes (i.e., the AD5933 chip is internally integrated with) a direct digital synthesizer, a digital-to-analog converter (DAC), an analog-to-digital converter (ADC), and a digital signal processing engine; the direct digital synthesizer generates a sinusoidal excitation voltage up to 100kHz, the sinusoidal excitation voltage is processed by the digital-to-analog converter and excites the piezoelectric material coupled on the object to be detected to obtain a response signal of the object to be detected, and then the response signal is subjected to a series of processing operations by the gain amplifier (PGA), the Low Pass Filter (LPF) and the analog-to-digital converter (ADC) and then is transmitted to the digital signal processing engine (DSP) to be subjected to Fourier transform (DFT) processing to obtain a real part and an imaginary part of the frequency domain impedance signal. Note that, in the drawings: the internal oscillator is used for providing clock frequency for the direct digital synthesizer, so that the accuracy of a Fourier transform result is ensured, and frequency shift errors are reduced. The temperature sensor is used for measuring the temperature of the chip and providing a reference temperature. The low pass filter LPF is used for filtering the signal; the gain amplifier PGA is used to amplify a signal.
In the preferred embodiment, each of the 8-out-of-n calibration resistors is in a parallel state; and each feedback resistor in the 8-selected-n feedback resistors is in a parallel state. Under the parallel state, because of the principle that the resistance value is reduced after the resistors are connected in parallel, the method is very suitable for detecting a new object to be detected with the impedance value smaller than the original range, for example, the originally estimated impedance range of a batch of objects to be detected is 1k omega-8 k omega, 8 calibration resistors are arranged in parallel and 8 feedback resistors are arranged in parallel according to the gradient of 1k omega and 2k omega … … 8k omega, and an 8 n-selection switch is arranged according to the circuit shown in fig. 2 to realize the parallel state of the 8 n-selection calibration resistors and the 8 n-selection feedback resistors, so that during measurement, the impedance of the predicted objects to be detected with the impedance of 1k omega-8 k omega can be accurately measured, the impedance with a smaller value can be measured after the parallel connection, the accurate measurement range can be expanded, and when the next batch of objects to be detected is replaced, even if the impedance of the next batch of the objects to be detected is smaller than the originally predicted minimum value of 1k omega, the measurement cannot be influenced, and the measurement is not required to be replaced, and the calibration resistors, the measurement, the impedance of the batch of the next objects to be adapted to be measured, can be replaced in a troublesome way, A feedback resistance. In addition, under the parallel combination, the gradient which is originally separated by 1k omega is also reduced, and the final measurement effect is more accurate while the total measurement range is increased. It should be noted that the above values are only examples, but not limited to, specific calibration resistances,
In the preferred embodiment, for the 8-to-1 measurement channel, the microcontroller switches the 8-to-1 measurement channel by controlling the 8-way analog switch ADG708, so as to select 8 impedance measurement channels to be measured. For the 8-out-of-n calibration resistor, the microcontroller realizes the selection of the calibration resistor by controlling the switching of an 8-way analog switch ADG715 (a low-voltage serial eight-bit switch); for the feedback resistor of 8-out-of-n, the microcontroller realizes the selection of the feedback resistor by controlling the switching of the 8-way analog switch ADG 715. In the case of a pure resistor, the impedance phase angle is 0 °, and thus the impedance value is a resistance value.
Referring to fig. 2, when the switch connected to the 8-out-of-n calibration resistor in the 1-out-of-2 switch of the present embodiment is turned on, the switch is also turned onI.e. the switch is on the left side S in U2 1 When switching on and off, entering a calibration stage, wherein the calibration stage comprises: selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R CAL Selecting the resistance of the feedback resistance of n selected by 8, and recording the selected feedback resistance value as R FB Wherein R is CAL =R FB (ii) a Executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment School And a first imaginary value I School Obtaining the modulus M of the calibration resistor according to the calculation School Calculating the gain factor GF and the system phase theta system . When the switch connected with the 8-from-1 measuring channel in the 2-from-1 switch is turned on, namely the switch on right side S in U2 2 When the switch is switched on and switched off, a measurement stage is entered, wherein the measurement stage comprises the following steps: selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to an object to be measured according to a measuring instruction of an upper computer; executing an impedance measurement instruction, and acquiring a second real part value R of the impedance measured under the working condition Measuring And a second imaginary value I Side survey And calculating to obtain the impedance modulus M of the object to be measured Measuring Using gain factor GF versus impedance modulus M Measuring Making corrections and using the system phase θ system And correcting the impedance phase of the object to be measured.
The above is a measurement process, and when the measurement is specifically performed, it is necessary to select a plurality of (or all, as required, selected) levels of calibration resistance values and feedback resistance values to perform measurement and correct the measured data. After correcting the measurement data of the object to be measured, the upper computer further performs the following operations: arranging all corrected data from small to large according to the size of the used feedback resistance value; respectively calculating the change rate of the amplitude relative error of every two adjacent groups of corrected measurement data along with the change rate of the feedback resistance value and the change rate of the curve shape relative error along with the change rate of the feedback resistance value; selecting four resistance values with the minimum amplitude relative error change rate along with the change rate of the feedback resistance values to form a candidate resistance value interval RI1, and calculating a first score of each resistance value according to the relative magnitude of the amplitude relative error change rate along with the change rate of the resistance values; selecting four resistance values with the minimum curve shape relative error change rate along with the resistance values to form a candidate resistance value interval RI2, and calculating a second score of each resistance value according to the relative size of the curve shape relative error change rate along with the resistance values; combining the selected candidate resistance value interval RI1 and the candidate resistance value interval RI2 to form a candidate resistance value interval RI, and summing a first score of each resistance value in the candidate resistance value interval RI under the amplitude relative error change rate and a second score under the curve shape relative error change rate; the resistance value with the highest score after summation is selected as the optimal feedback resistance value.
In this preferred embodiment, determining whether the selected optimal feedback resistance value is unique, and if the number of the resistance values with the highest score after the summation is not unique, further includes: and selecting the resistance value with the resistance value closest to the resistance value at the center position of the candidate resistance value interval RI from the plurality of optimal feedback resistance values. The resistance value is the calibration resistance most suitable for the measurement object. The calibration resistor may be used to assist in calibration and measurement. In the embodiment, the relative changes of the impedance amplitude and the impedance phase are comprehensively considered when selecting the measurement data, and the selected data is the measurement data with the best calibration effect under the condition of comprehensively considering the accuracy of the impedance amplitude and the accuracy of the impedance phase. Furthermore, the measurement data selected by the embodiment with the best calibration effect is a complete set of measurement data, and the phenomenon of record overflow at individual frequency points is avoided, so that the obtained measurement data can be ensured to be continuous data.
In summary, based on the above patent, the invention improves the circuit structure to make the calibration resistance and the feedback resistance change from the range of 16 to 1 to the range of 8 to n, so that the range of the measured impedance value is greatly increased compared with the previous one. Preferably, the n-selected 8 resistors are all arranged in parallel, so that a resistor combination scheme with a smaller resistance value can be combined on the basis of the 8 resistors, and the impedance measurement with a smaller value is adapted. The resistance measuring device can adapt to the impedance measurement of most objects to be measured after the resistance selection range is greatly expanded, and the situation that the impedance of a certain object to be measured is too large to influence the measurement effect due to the fact that the difference between the impedance of the certain object to be measured and the impedance of the preset calibration resistor and the impedance of the feedback resistor in a plurality of objects to be measured is too large is avoided.
Example 2:
corresponding to the wireless multi-channel micro impedance measurement system in embodiment 1, embodiment 2 of the present invention provides a wireless multi-channel micro impedance measurement method. As shown in fig. 4, the method includes the steps of:
step 100 (correction data collection phase): selecting to enter a calibration stage or a measurement stage through a channel switching circuit, and performing impedance test in the calibration stage through an impedance measurement circuit to obtain measurement data in the calibration stage; and performing impedance test on the object to be measured in the measurement stage through the impedance measurement circuit to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in the calibration stage. In this step, the channel switching circuit includes an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration, and an 8-to-n feedback resistor for feedback, where n is a natural number greater than or equal to 1 and less than or equal to 8; in addition, the channel switching circuit further comprises a 1-from-2 switch, one of the 1-from-2 switches is connected with the 1-from-8 measurement channel, and the other switch of the 1-from-2 switch is connected with the n-from-8 calibration resistor; when the switch of the 2-to-1 switch connected with the 8-to-n calibration resistor is switched on, entering a calibration stage; and when the switch of the 1-from-2 switch connected with the 1-from-8 measurement channel is switched on, entering a measurement stage.
Step 200 (optimal feedback resistance value selection stage): and selecting the optimal feedback resistance value suitable for the object to be detected according to a preset rule.
Specifically, referring to fig. 5, in step 100 of this embodiment, performing an impedance test in a calibration stage through an impedance measurement circuit, and acquiring measurement data in the calibration stage specifically includes:
step 101: selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R CAL To saidSelecting n feedback resistors by 8 to select resistors, and recording the selected feedback resistance value as R FB Wherein R is CAL =R FB 。
Step 102: executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment School And a first imaginary value I School Obtaining the modulus M of the calibration resistor according to the calculation School Calculating the gain factor GF and the system phase theta system 。
In step 100 of this embodiment, performing an impedance test on an object to be measured in a measurement stage by using an impedance measurement circuit to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in a calibration stage specifically includes:
step 103: and selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to the object to be measured according to the measuring instruction of the upper computer.
Step 104: executing an impedance measurement instruction, and acquiring a second real part value R of the impedance measured under the working condition Measuring And a second imaginary value I Measuring And calculating to obtain the impedance modulus M of the object to be measured Measuring Using gain factor GF versus impedance modulus M Measuring Making corrections and using the system phase θ system And correcting the impedance phase of the object to be measured.
For an object to be measured, a plurality of different calibration resistance values/feedback resistance values are selected, and the operation of step 100 is repeated to obtain a plurality of sets of measurement data and corrected data, and then the stage of step 200 can be added.
Referring to fig. 6, in the present embodiment, the step 200 can be subdivided into the following steps (the following steps are also the preset rules described in the step 200).
Step 201: all the corrected data are arranged from small to large according to the size of the feedback resistance value used. In a certain implementation process, the object to be measured may be calibrated and measured using different feedback resistance values based on the AD5933, so as to obtain calibration data in a calibration stage and measurement data in a measurement stage under multiple sets of feedback resistances.
Step 202: and respectively calculating the change rate REA _ S of the amplitude relative error along with the resistance value and the change rate RES _ S of the curve shape relative error along with the resistance value of each two groups of corrected adjacent measurement data. For example, as shown in fig. 7, in the corrected adjacent measurement data, in fig. 7, there are four groups of data under one resistor, where the value of the character S includes four cases, i.e., Z, θ, G, and X, and Z is the impedance modulus M using the gain coefficient GF Measuring The corrected impedance amplitude of the object to be detected is obtained, and theta is the phase theta of the system system Impedance phase theta of object to be measured Measuring The corrected precise impedance phase is carried out, G is the real impedance part of the finally corrected measurement data, X is the imaginary impedance part of the finally corrected measurement data, wherein the real impedance part and the imaginary impedance part are formed by Z andobtained by conversion according to the formula: g = Z × cos θ, X = Z × sin θ. RES _ S and REA _ S here represent the relative deviation of one entire set of data from another, and RES _ S is represented as RES _ Z, RES \/in FIG. 7RES _ G and RES _ X, RES _ X in FIG. 7 i-1 Represented by the resistance R i-1 Is as followsAnd R is i Is as followsRelative deviation, other parameter expressions are analogized in turn.
In step 203, selecting four resistors with the smallest amplitude relative error change rate REA _ S to form a candidate resistor interval RI1, and calculating a first score of each resistor according to the relative magnitude of the amplitude relative error change rate REA _ S; four resistors with the smallest curve shape relative error change rate RES _ S are selected to form a candidate resistor section RI2, and a second score of each resistor is calculated according to the relative size of the curve shape relative error change rate RES _ S.
In the example shown in fig. 7, in the selection process, the magnitude relative error rate of change with the resistance value and the curve shape relative error rate of change with the resistance value are sorted around the four dimensions of Z, θ, G and X; in an optional implementation manner, the ranking of one or more items may be selected for weighted calculation to obtain a final ranking result. In embodiment 3 of the present invention, an example of a solution that directly adopts a Z single dimension as a sequence for calculating a change rate of an amplitude relative error with a resistance value will also be presented, and details are not repeated here.
In step 204, the selected candidate resistance section RI1 and the candidate resistance section RI2 are merged to form the candidate resistance section RI, and the first score of each resistance in the candidate resistance section RI at the amplitude change rate and the second score at the curve shape change rate are summed.
A specific example of a corresponding calculation method may refer to the architectural diagram presented in fig. 7; and corresponding implementation details will also be specifically set forth in the following extended embodiments of the present invention.
In step 205, the resistor with the highest score after summation is selected as the best feedback resistor.
The resistance is the calibration resistance of the miniature impedance measuring device which is most suitable for the measuring object. The calibration resistor can be used to help the miniature impedance measuring device to perform calibration and measurement.
The embodiment of the invention comprehensively considers the relative change of the impedance amplitude and the impedance phase when selecting the measurement data, and the selected data is the measurement data with the best calibration effect under the condition of comprehensively considering the precision of the impedance amplitude and the precision of the impedance phase.
Furthermore, the measurement data with the best calibration effect selected by the invention is a complete set of measurement data, the phenomenon of record overflow on individual frequency points can not occur, and the obtained measurement data can be ensured to be continuous data.
In the embodiment of the present invention, in step 205, a complex situation may also occur, that is, it is determined whether the selected optimal feedback resistance is unique, and if the number of the resistors with the highest score after the summation is not unique, the method further includes:
and selecting the resistor with the corresponding resistance value closest to the resistance value at the center position of the candidate resistor section RI from the plurality of optimal feedback resistors.
For each coefficient in step 100, wherein the gain coefficient GF and the system phase are calculatedThe calculation formula is as follows:
GF=(1/R cal )/M school ;(1)
θ system =arctan(I School /R School )×180°/π;(2)
R cal To calibrate the resistance value of the resistor, a known value;the impedance modulus value of the calibration resistor measured in the calibration stage; i is School For the imaginary part of the impedance, R, of the calibration resistance measured during the calibration phase School The real impedance part of the calibration resistor measured in the calibration stage.
Correspondingly, the gain factor GF is used to match the impedance modulus M Measuring Making corrections and using the system phase θ system Correcting the impedance phase of the object to be detected, wherein the specific correction formula is as follows:
Z=(1/GF)/M measuring =(M School ×R cal ) /M Measuring ;(3)
θ Measuring =arctan(I Measuring /R Measuring )×(180°/π);(4)
Wherein,the impedance module value of the object to be measured is measured in the measuring stage; z is the impedance modulus M using the gain factor GF Measuring Corrected impedance amplitude of object to be measuredA value; i is Measuring The impedance imaginary part of the object to be measured is measured in the measuring stage; r Measuring The real part of the impedance of the object to be measured is measured in the measuring stage; theta Measuring The impedance phase is calculated according to the real impedance part of the object to be measured and the imaginary impedance part of the object to be measured in the measuring stage.
Wherein, the range of the arctan function is [ -pi/2, pi/2]And the range of the actual phase is [ -pi, pi]Thus the measured system phase θ system And theta Measuring Quadrant correction of the phase is required;
the finally used phase data also needs to be subjected to system phase correction, and the system phase correction formula is as follows: θ = θ Measuring -θ system (ii) a (5) Where θ is the precise impedance phase. According to the formula, the micro impedance measuring equipment can be calibrated and used for measurement, and the measurement data of the micro impedance measuring equipment is corrected into accurate data, so that high-precision measurement can be realized by using the micro impedance measuring equipment.
The quadrant correction comprises:
first quadrant, θ x =arctan(I i /R i )×(180°/π);
Second quadrant, θ x =arctan(I i /R i )×(180°/π)+180°;
Third quadrant, θ x =arctan(I i /R i )×(180°/π)+180°;
Fourth quadrant, θ x =arctan(I i /R i )×(180°/π)+360°;
Where x is "test" or system and the corresponding i is "calibration" or "test".
In step 202, a rate of change of amplitude relative error with resistance value REA _ S and a rate of change of curve shape relative error with resistance value RES _ S of each two sets of adjacent measurement data are calculated, respectively, in combination with the embodiment of the present invention, which also provides a specific implementation manner in the embodiment of the present invention, including:
wherein,(ii) a m is the number of the measuring frequency points;is the feedback resistance R of the jth position FB The ith frequency point data in the calibration data measured below may use impedance magnitude, impedance phase, impedance real part and impedance imaginary part data, respectively, instead of the expression S, i.e., S = Z,G or X.
Wherein,is the feedback resistance R of the jth position FB Averaging the measured corrected measurement data; Δ R is a difference between the feedback resistance of the j +1 th position and the feedback resistance of the j th position;is the standard deviation of the corrected measurement data measured at the feedback resistance of the jth location; REA _ S j The corrected measured data amplitude value relative error change rate value of the feedback resistor at the jth position; CCD _ S j The cross-correlation distance between the measurement data of the feedback resistance at the jth position and the measurement data of the feedback resistance at the (j + 1) th position; RES _ S j The corrected curve shape of the measurement data of the feedback resistance at the jth position has a relative error change rate value of S = Z,G or X. Wherein,i above is the imaginary impedance returned from the measurement, I is not the final correct imaginary impedance; where X is the correct imaginary impedance after final correction; m is the impedance modulus, Z is the impedance amplitude obtained after final correction, and M and Z can be obtained by GF conversion.
In combination with the embodiment of the present invention, there is also provided a score calculation method for a feedback resistor, where the corresponding calculation formula is as follows:
P j score of feedback resistance for jth position;the first score of the feedback resistance of the jth position under the REA _ S index;a second score for the feedback resistance at the jth location under the RES _ S index; alpha (alpha) ("alpha") 1 A scoring weight for the measured data amplitude versus error rate; alpha is alpha 2 A scoring weight for the shape of the measurement data curve versus the rate of change of error; alpha is alpha 1 And alpha 2 Setting according to the selection requirement bias of the measurement data amplitude and the curve shape; s = Z,G or X, in embodiments of the invention, optionally α 1 =α 2 =0.5。
For the above score calculation, it should be noted that, in the present invention, the resistance with the minimum calculated amplitude relative error change rate is the resistance with the highest amplitude precision; and the resistance with the minimum curve shape relative error change rate is the resistance with the highest curve shape precision. Therefore, we need to select the resistor with the minimum amplitude relative error change rate and the minimum curve shape relative error change rate, wherein the higher the score of the resistor with the minimum amplitude relative error change rate index and the curve shape relative error change rate index ranked more forward, we can select the resistor with the highest score, i.e. the resistor with the minimum amplitude relative error change rate and curve shape error change rate, i.e. the resistor with the maximum comprehensive amplitude precision and curve shape precision can be selected. In practical situations, there may be situations where the individual resistances have only a first score or only a second score, where if only the first score is present, the relative second score is processed as zero by the score, and similarly if only the second score is present, the relative first score is processed as zero by the score, thereby similarly completing the summation process; in this case, the resistors having the first score and the second score are more likely to be selected, and the resistor having the highest summation result becomes the finally selected resistor. In addition, because the rate of change of the amplitude error and the rate of change of the shape error may not be simultaneously minimized. For example, the feedback resistance with the smallest rate of change of magnitude error (the first score is relatively high), but it is possible that the rate of change of shape error is relatively large (the second score is relatively low, even 0- -i.e., not listed in the rank proposed by the present embodiment). Both the amplitude error change rate and the curve shape error change rate are selected indexes, and the emphasis selection is performed according to the weight coefficients alpha 1 and alpha 2. The resistance with the highest score is selected to select the best resistance combining the two metrics. In practice, the resistor with high data amplitude precision but low curve shape precision is also the resistor which we want to select, and the resistor can also meet the practical use requirement. Only the first scoring resistances can be compared according to the logic of the present embodiment, as such resistances are also desirable. The resistance with the minimum calculated amplitude relative error change rate is the resistance with the highest amplitude precision; the resistance with the smallest calculated curve shape relative to the error rate is the resistance with the highest curve shape accuracy.
The first score and the second score can be achieved by using a conventional linear interpolation formula, which can be flexibly adjusted according to actual requirements, and as a simplest implementation, the linear interpolation formula is as follows:
wherein x1=1,2,3,4, and represents the ranking of the four resistors with the smallest rate of change of the magnitude relative error with the change of the feedback resistance value; x2=1,2,3,4, representing the four resistor ranks where the rate of change of the curve shape with respect to error with resistance is the smallest. It is to be understood that this formula is but one of many possible implementations and should not be taken as a sole explanation of the limited calculation of the first and second scores described above.
Example 3:
in the field of structural health monitoring, when a micro impedance measuring device is used to perform damage monitoring based on an impedance method, a Piezoelectric ceramic Transducer (PZT) is generally connected to the micro impedance measuring device, the PZT is then attached to an object to be monitored, and the micro impedance measuring device can automatically perform impedance measurement on the object to be monitored based on a specific algorithm. The traditional algorithm for helping the miniature impedance measuring equipment to carry out automatic measurement is a gain coefficient calibration method, and the difference between the gain coefficient calibration method and the measuring method of the invention is respectively compared in detail below.
Firstly, 25 feedback resistance values are used (by means of 8 to n, more feedback resistance values can be used, here, 25 are taken as an example), a gain coefficient calibration method is used for measuring the impedance of an iron bar in a frequency range of [50kHz, 60kHz ], the gain coefficient method is an algorithm suitable for being embedded into a single chip microcomputer for use, then because the memory space and the calculation capacity of the single chip microcomputer are limited, the single chip microcomputer can only store the gain coefficient under a certain specific frequency point, and the frequency point full coverage of the gain coefficient cannot be realized, so that in the actual impedance measurement, the problem that the frequency value of the used gain coefficient is not in the measured frequency interval range cannot be avoided, therefore, in order to be consistent with the actual application situation, the gain coefficient under the frequency point of 10kHz is selected and used, the feedback resistance, the impedance measurement range and the gain coefficient are as shown in fig. 8, the range of the measured modulus values under the feedback resistance can be calculated according to the range of the impedance and the gain factor, and the range of the modulus values is calculated as follows (for convenience of browsing, the formula numbers are self-organized in examples 2 and 3, the formula numbers start from 1 in example 2, and the formula numbers start from 21 in example 3):
M x =(1/GF)/Z x =1/(GF×Z x ) (ii) a (21) Wherein GF is the gain factor, Z x Is the impedance amplitude, M, of the object to be measured x Is the impedance modulus of the object to be measured;
wherein Z is x Regarding the parameter setting of the measuring device, taking the measuring system provided in fig. 2 as an example, the output signals are:
thus, Z x The relationship to the parameter settings of the measuring device is as follows:
substituting the formula (23) into the formulas (21) and (22) results in the following relationship:
the output voltage of the measurement device needs to satisfy a certain range, which can be obtained from the formula (24), when the measurement parameter setting is fixed (e.g. Programmable Gain Amplifier (PGA), and input voltageFixed), may be based on the gain factor GF, the feedback resistance value R FB Calculating to obtain the module value measuring ranges corresponding to different feedback resistors, and M max And M min 。
The measurement flow of the gain factor calibration method is shown in fig. 9.
Firstly, the feedback resistor switched to the minimum gear (for example, the feedback resistor 470 Ω used here) performs impedance measurement on the object to be measured at a first frequency point (for example, 50 kHz), returns to the measured module value, then judges whether the measured module value is within the module value range of the feedback resistor 470 Ω, if not, switches to the feedback resistor of the next gear to perform re-measurement and judgment until the measured module value is within the module value range of the feedback resistor used, and then calculates the impedance value according to the gain coefficient under the feedback resistor of the gear:
Z=(1/GF)/M x =1/(GF×M x ) (ii) a Wherein M is a measured modulus value;
and if the module values measured by the frequency point under the feedback resistors of all the gears are not in the corresponding module value range, marking the frequency point to record overflow. And finally, recording and outputting the calculated impedance value, and repeating the process to measure the impedance of the next frequency point.
The measurement result of the above-mentioned prior art gain factor calibration method is shown in fig. 10, and it can be seen that there is a certain error between the measured data and the accurate data, and it can be seen that, as marked in fig. 10, there are recording overflows between points 1 and 2 (represented in the figure as two adjacent points on the measured data line, and an interruption of the measured data occurs between them), and between points 3 and 4, between points 5 and 6, and between points 7 and 8, which results in discontinuity of the measured impedance magnitude curve. Moreover, the algorithm only returns impedance magnitude data, and does not consider and return impedance phase data. Therefore, a high-precision measurement method is needed in which the measurement data are continuous and the impedance amplitude and impedance phase data can be returned simultaneously.
in step 301, measurement data is collected and corrected according to an impedance correction formula.
Calibration phase in the correction process: z x Position connecting a calibration resistor with the resistance value equal to that of the feedback resistor, and then acquiring the real impedance value R of the calibration resistor School And the imaginary value of the impedance I School Then according to the calculated impedance modulus value M of the calibration resistor School Calculating the gain factor GF and the system phase theta system The calculation formula is as formula (1) to formula (2) in example 2.
Measurement phase in the correction process: z x Connecting the position of the object to be measured, and then collecting the real part value R of the impedance of the returned object to be measured Measuring And the imaginary value of the impedance I Measuring Then calculating to obtain the impedance modulus M of the object to be measured Measuring Finally, the gain coefficient obtained in the calibration stage is used for correcting the impedance module value of the object to be measured, and the correction formula is shown as the formula (3) in the embodiment 1; using R Measuring And I Measuring Calculating the impedance phase of the object to be measured at the measurement stage, and using the system phase theta system For impedance phase theta Measuring The correction was performed by the correction formulas (4) to (5) in example 2.
Since the range of the arctan function is [ - π/2, π/2]And the range of the actual phase is [ -pi, pi]And therefore the above measured phase theta system And theta Measuring Quadrant correction is required, and the quadrant correction relationship of the phase is shown in fig. 12 and described in detail in embodiment 2.
According to the formula, the micro impedance measuring equipment can be calibrated and used for measurement, and the measurement data of the micro impedance measuring equipment is corrected into accurate data, so that high-precision measurement can be realized by using the micro impedance measuring equipment.
In step 302, all the corrected data are arranged from small to large according to the magnitude of the feedback resistance value used.
In step 303, the rate of change of the amplitude relative error with the resistance value REA _ S and the rate of change of the curve shape relative error with the resistance value RES _ S of each two sets of adjacent data are calculated, respectively.
And (3) calculating formulas of the change rate of the amplitude relative error of the adjacent data and the change rate of the curve shape relative error along with the resistance value, wherein the calculation formulas are shown as formulas (6) - (7).
In step 304, selecting four resistors with the minimum rate of change of the amplitude relative error along with the resistance value to form a candidate interval RI1, and calculating the score of each resistor according to the relative magnitude of the rate of change; the four resistors having the smallest rate of change in the relative error of the curve shape with respect to the resistance values are selected to constitute the candidate section RI2, and the score for each resistor is calculated from the relative magnitude of the rate of change, and the score for each resistor is shown in fig. 13.
In step 305, the candidate resistance sections RI are formed by taking a union of the candidate resistance sections RI1 and RI2 selected as described above, and the score of each resistance in the candidate resistance section RI at the amplitude change rate and the score at the curve shape change rate are summed up.
In step 306, the summed resistance with the highest score is selected as the best feedback resistance.
In step 307, it is determined whether the selected optimal feedback resistance is unique, and if the number of the selected optimal feedback resistances is not unique, a resistance having a resistance value closest to the resistance value of the center position of the candidate resistance interval among the optimal feedback resistances is continuously selected.
In this experiment, the measurement results of the impedance amplitude using the measurement method of the present invention are shown in fig. 14, and the measurement results of the impedance phase are shown in fig. 15. A comparison graph of the impedance amplitude measurement results of the gain coefficient calibration method and the measurement method of the present invention is shown in fig. 16, and it can be seen that the curve obtained by measuring is discontinuous due to the occurrence of the recording overflow phenomenon in the measurement process of the gain coefficient calibration method, for example, the curve obtained by measuring is discontinuous between 1 and 2 points, between 3 and 4 points, between 5 and 6 points, and between 7 and 8 points. In addition, the relative error between the impedance amplitude data and the accurate data measured by the two methods is compared, and the comparison result is shown in fig. 17, so that the accuracy of the impedance amplitude is further improved by the measuring method, and the impedance phase data can be returned by the measuring method, thereby being beneficial to performing damage monitoring based on the impedance amplitude and the impedance phase in the field of structural health monitoring.
The embodiment of the invention comprehensively considers the relative change of the impedance amplitude and the impedance phase when selecting the measurement data, and the selected data is the measurement data with the best calibration effect under the condition of comprehensively considering the precision of the impedance amplitude and the precision of the impedance phase. Compared with the data measured by the gain coefficient calibration method, the method has the advantage that the accuracy of the selected measurement data on the basis of the traversal calculation and analysis of all the measured data is improved in the impedance amplitude and the impedance phase. Furthermore, the measurement data with the best calibration effect selected by the invention is a complete set of measurement data, the phenomenon of record overflow on individual frequency points can not occur, and the obtained measurement data can be ensured to be continuous data.
In addition, the invention improves the calibration resistance and the feedback resistance from the range of 16 to 1 to the range of 8 to n, thereby greatly increasing the range of the measured impedance value compared with the prior art. Preferably, the n-selected 8 resistors are all arranged in parallel, so that a resistor combination scheme with a smaller resistance value can be combined on the basis of the 8 resistors, and the impedance measurement with a smaller value is adapted. The resistance measuring device can adapt to the impedance measurement of most objects to be measured after the resistance selection range is greatly expanded, and the situation that the impedance of a certain object to be measured is too large to influence the measurement effect due to the fact that the difference between the impedance of the certain object to be measured and the impedance of the preset calibration resistor and the impedance of the feedback resistor in a plurality of objects to be measured is too large is avoided.
Example 4:
fig. 18 is a schematic diagram of the architecture of a wireless multi-channel impedance measuring apparatus according to an embodiment of the present invention. The wireless multi-channel micro-impedance measurement device of the present embodiment includes one or more processors 21 and a memory 22. In fig. 18, one processor 21 is taken as an example.
The processor 21 and the memory 22 may be connected by a bus or other means, and the bus connection is exemplified in fig. 18.
The memory 22, which is a non-volatile computer-readable storage medium, may be used to store non-volatile software programs and non-volatile computer-executable programs, such as the wireless multi-channel miniature impedance measurement method of embodiment 2. The processor 21 executes the wireless multi-channel micro-impedance measurement method by executing non-volatile software programs and instructions stored in the memory 22.
The memory 22 may include high speed random access memory and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid state storage device. In some embodiments, the memory 22 may optionally include memory located remotely from the processor 21, and these remote memories may be connected to the processor 21 via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The program instructions/modules are stored in the memory 22 and, when executed by the one or more processors 21, perform the wireless multi-channel impedance micro-measurement method of embodiment 1 described above, e.g., perform the various steps shown in fig. 4-5 described above.
It should be noted that, for the information interaction, execution process and other contents between the modules and units in the apparatus and system, the specific contents may refer to the description in the embodiment of the method of the present invention because the same concept is used as the embodiment of the processing method of the present invention, and are not described herein again.
Those of ordinary skill in the art will appreciate that all or part of the steps of the various methods of the embodiments may be implemented by associated hardware as instructed by a program, which may be stored on a computer-readable storage medium, which may include: read Only Memory (ROM), Random Access Memory (RAM), magnetic or optical disks, and the like.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A wireless multi-channel impedance micro-measurement method is characterized by comprising the following steps:
selecting to enter a calibration stage or a measurement stage through a channel switching circuit, wherein the channel switching circuit comprises an 8-to-1 measurement channel for accessing an object to be measured, an 8-to-n calibration resistor for calibration and an 8-to-n feedback resistor for feedback, and n is a natural number which is more than or equal to 1 and less than or equal to 8;
performing impedance test in a calibration stage through an impedance measurement circuit to obtain measurement data in the calibration stage; performing impedance test on an object to be measured in a measurement stage through an impedance measurement circuit to obtain measurement data in the measurement stage, and correcting the measurement data in the measurement stage according to the measurement data in a calibration stage;
and selecting the optimal feedback resistance value suitable for the object to be detected according to a preset rule.
2. The method according to claim 1, wherein the channel switching circuit further includes a 1-out-of-2 switch, one of the 1-out-of-2 switches is connected to the 1-out-of-8 measurement channel, and the other switch of the 1-out-of-2 switch is connected to the n-out-of-8 calibration resistor, and the selecting to enter the calibration phase or the measurement phase by the channel switching circuit specifically includes:
when the switch of the 2-to-1 switch connected with the 8-to-n calibration resistor is switched on, entering a calibration stage;
and when the switch of the 1-from-2 switch connected with the 1-from-8 measurement channel is switched on, entering a measurement stage.
3. The method of claim 2, wherein the impedance measurement is performed by the impedance measurement circuit in a calibration phase, and the obtaining of the measurement data in the calibration phase specifically comprises:
selecting the resistance of the 8-n selected calibration resistor according to the setting instruction of the upper computer, and recording the selected calibration resistance value as R CAL Selecting the resistance of the feedback resistance of n selected by 8, and recording the selected feedback resistance value as R FB Wherein R is CAL =R FB ;
Executing an upper computer measuring instruction, and acquiring a first real part value R of the impedance measured by the impedance measuring circuit and stored in a register under the working conditions of accessing the calibration resistor and the feedback resistor at the moment School And a first imaginary value I School Obtaining the modulus M of the calibration resistor according to the calculation School Calculating the gain factor GF and the system phase theta system 。
4. The method of claim 3, wherein the impedance measurement of the object to be measured by the impedance measurement circuit in the measurement phase to obtain the measurement data in the measurement phase, and the correction of the measurement data in the measurement phase according to the measurement data in the calibration phase specifically comprises:
selecting a feedback resistance channel which is the same as the feedback resistance channel in the calibration stage, and selecting a certain measuring channel which is connected to an object to be measured according to a measuring instruction of an upper computer;
executing an impedance measurement instruction, and acquiring a second real part value R of the impedance measured under the working condition Measuring And a second imaginary value I Measuring And calculating to obtain the impedance modulus M of the object to be measured Measuring Using gain factor GF versus impedance modulus M Measuring Making corrections and using the system phase θ system And correcting the impedance phase of the object to be measured.
5. The method of claim 4, wherein the selecting the optimal feedback resistance value suitable for the object to be measured according to the predetermined rule specifically comprises:
arranging all corrected data from small to large according to the size of the used feedback resistance value;
respectively calculating the change rate of the amplitude relative error of every two adjacent groups of corrected measurement data along with the change rate of the feedback resistance value and the change rate of the curve shape relative error along with the change rate of the feedback resistance value;
selecting four resistance values with the minimum amplitude relative error change rate along with the change rate of the feedback resistance values to form a candidate resistance value interval RI1, and calculating a first score of each resistance value according to the relative magnitude of the amplitude relative error change rate along with the change rate of the resistance values; selecting four resistance values with the minimum curve shape relative error change rate along with the resistance values to form a candidate resistance value interval RI2, and calculating a second score of each resistance value according to the relative size of the curve shape relative error change rate along with the resistance values;
combining the selected candidate resistance value interval RI1 and the candidate resistance value interval RI2 to form a candidate resistance value interval RI, and summing a first score of each resistance value in the candidate resistance value interval RI under the amplitude relative error change rate and a second score under the curve shape relative error change rate;
the resistance value with the highest score after summation is selected as the optimal feedback resistance value.
6. The method of claim 5, wherein determining whether the selected optimal feedback resistance value is unique, and if the number of the resistance values with the highest score after summation is not unique, further comprising:
and selecting the resistance value with the resistance value closest to the resistance value at the center position of the candidate resistance value interval RI from the plurality of optimal feedback resistance values.
7. The method for measuring the wireless multi-channel micro-impedance of any one of claims 1-6, wherein for the 8-to-1 measurement channel, the 8-to-1 measurement channel is switched by controlling an 8-way analog switch (ADG) 708 through a microcontroller to select 8 impedance measurement channels to be measured.
8. The wireless multi-channel impedance micro-measuring method according to any one of claims 1-6, wherein for the 8-out-of-n calibration resistor, the microcontroller realizes the selection of the calibration resistor by controlling the switching of an 8-way analog switch (ADG 715); for the feedback resistor of 8-out-of-n, the microcontroller realizes the selection of the feedback resistor by controlling the switching of the 8-way analog switch ADG 715.
9. The wireless multi-channel impedance micro-measuring method according to any one of claims 1-6, wherein each of the 8-out-of-n calibration resistors is in parallel; and each feedback resistor in the 8-selected-n feedback resistors is in a parallel state.
10. A wireless multi-channel micro-impedance measurement device, the device comprising:
at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores instructions executable by the at least one processor for performing the wireless multi-channel micro-impedance measurement method of any one of claims 1-9.
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