CN114859087A - Wafer probe card and wafer detection equipment - Google Patents
Wafer probe card and wafer detection equipment Download PDFInfo
- Publication number
- CN114859087A CN114859087A CN202210587180.2A CN202210587180A CN114859087A CN 114859087 A CN114859087 A CN 114859087A CN 202210587180 A CN202210587180 A CN 202210587180A CN 114859087 A CN114859087 A CN 114859087A
- Authority
- CN
- China
- Prior art keywords
- probe
- wafer
- main
- auxiliary
- card
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/023—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring distance between sensor and object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
Abstract
The invention relates to the field of electronic integrated circuit detection, and particularly discloses a wafer probe card and wafer detection equipment, which comprise a device probe and a monitoring probe cluster; the monitoring probe cluster comprises a main probe and a first auxiliary probe; the lowest end of the first auxiliary probe is higher than the device probe, and the lowest end of the main probe is lower than the device probe; after the main probe is contacted with the wafer to be tested, the main probe slides along a first direction along with the wafer probe card continuously pressing down, and when the main probe is contacted with the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe is contacted and connected with the first auxiliary probe to form an alarm loop. The invention avoids bending of the probe on the wafer probe card, ensures the service life of the wafer probe card, and has the advantages of low equipment cost, convenient use, low circuit modification cost and higher universality.
Description
Technical Field
The invention relates to the field of electronic integrated circuit detection, in particular to a wafer probe card and wafer detection equipment.
Background
Wafers of photonic and electronic integrated circuits are typically inspected at the wafer level before being diced into chips and packaged into products. Wafer level detection has very important significance for reducing the cost of chip detection, ensuring the product quantity rate and controlling the product cost by companies. The use of probe cards for the inspection of devices on a wafer is now a very common practice in the testing of semiconductor devices today. In addition, in the chip test, the connection of the electrical signals can be realized by a gold wire bonding mode or a probe card needle pressing mode. After the chip bonded by the gold wire is detected, if the gold wire ball bonded on the metal electrode plate is removed, the metal electrode plate of the chip can be damaged to a certain extent. In order to realize nondestructive testing, chip inspection is also often performed by pressing a probe card.
The probe tip of the probe in the probe card is usually very tiny and very easy to damage, and during the use process, the too violent pressing of the probe, that is, the too long distance for the probe to continue pressing after contacting with the wafer, is easy to cause the metal fatigue and damage of the probe. At present, in order to monitor the distance between the probe and the wafer well, there are several methods, such as installing a pressure sensor on a clamp for fixing the probe, and determining the pressing distance according to the pressing pressure of the probe; installation laser rangefinder, installation electric capacity rangefinder etc. nevertheless no matter be sensor or distancer, all can promote equipment manufacturing cost and maintenance cost by a wide margin, and introduce new accurate sensor or distancer and also can lead to the process of installation, debugging too loaded down with trivial details.
Therefore, how to provide a method for monitoring the distance between the probe card and the wafer, which has a simple structure and is convenient to use, becomes a problem to be solved in the prior art.
Disclosure of Invention
The invention aims to provide a wafer probe card and wafer detection equipment, which solve the problems of high cost, complicated installation and debugging processes and inconvenient use of a method for monitoring the distance between the probe card and a wafer in the prior art.
In order to solve the above technical problems, the present invention provides a wafer probe card, which includes a device probe and a monitoring probe cluster;
the device probe can be connected with a microcircuit on the surface of the wafer to be tested to form a testing loop so as to detect the wafer to be tested;
the monitoring probe cluster comprises a main probe and a first auxiliary probe;
the lowest end of the first auxiliary probe is higher than the device probe, and the lowest end of the main probe is lower than the device probe;
the main probe is an inclined probe, after the main probe is contacted with the wafer to be tested, the main probe slides along a first direction along with the continuous pressing of the wafer probe card, and the first auxiliary probe is positioned on a sliding path of the main probe along the first direction;
and when the main probe is contacted with the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe is contacted and connected with the first auxiliary probe to form an alarm loop.
Optionally, in the wafer probe card, the monitoring probe cluster further includes a second auxiliary probe;
the second auxiliary probe is in contact connection with the main probe when the main probe is not in contact with the wafer to be tested, so that a standby loop is formed;
when the main probe is in contact with the wafer to be tested and starts to slide along the first direction, the contact between the second auxiliary probe and the main probe is broken.
Optionally, in the wafer probe card, the wafer probe card further includes an edge control cluster;
the edge control cluster is positioned at the edge of the wafer probe card and comprises an edge extension probe and an edge auxiliary probe;
the edge extension probe is downwards inclined to extend out of the edge of the projection of the wafer probe card, when the wafer probe card touches an obstacle in the horizontal direction, the edge extension probe is pressed by the obstacle and bends towards the second direction, and the edge auxiliary probe is positioned on a deformation path of the edge extension probe bending towards the second direction;
when the edge extension probe is bent to the first deformation amount in the second direction, the edge extension probe is in contact connection with the edge auxiliary probe to form a contact early warning loop.
Optionally, in the wafer probe card, the main probe is a flexible probe;
when the wafer probe card includes the edge control cluster, the edge extension probes are flexible probes.
Optionally, in the wafer probe card, the flexible probes are beryllium copper alloy probes.
Optionally, in the wafer probe card, the first auxiliary probe and/or the second auxiliary probe are tungsten needles or rhenium tungsten needles;
when the wafer probe card comprises the edge control cluster, the edge auxiliary probe is a tungsten needle or a rhenium tungsten needle.
Optionally, in the wafer probe card, an included angle between the main probe and the vertical direction ranges from 8 degrees to 12 degrees, inclusive.
Optionally, in the wafer probe card, the main probe tips are provided with buffer caps.
Optionally, in the wafer probe card, a projection extending direction of the main probe on a plane perpendicular to the first direction is different from an extending direction of projections of other auxiliary probes;
when the wafer probe card comprises the edge control cluster, the extension direction of the projection of the edge extension probe on the plane perpendicular to the second direction is different from the extension direction of the projection of the edge auxiliary probe.
A wafer inspection apparatus comprising any of the above wafer probe cards.
The wafer probe card provided by the invention comprises a device probe and a monitoring probe cluster; the device probe can be connected with a microcircuit on the surface of the wafer to be tested to form a testing loop so as to detect the wafer to be tested; the monitoring probe cluster comprises a main probe and a first auxiliary probe; the lowest end of the first auxiliary probe is higher than the device probe, and the lowest end of the main probe is lower than the device probe; the main probe is an inclined probe, after the main probe is contacted with the wafer to be tested, the main probe slides along a first direction along with the continuous pressing of the wafer probe card, and the first auxiliary probe is positioned on a sliding path of the main probe along the first direction; and when the main probe is contacted with the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe is contacted and connected with the first auxiliary probe to form an alarm loop.
The invention can realize the distance measurement between the wafer probe card and the wafer to be tested only by installing a plurality of probes on the wafer probe card, and communicate a new electric signal loop to facilitate subsequent alarm or signal control when the distance is too close, thereby avoiding the bending of the probes on the wafer probe card, ensuring the service life of the wafer probe card, having low equipment cost, realizing debugging and maintenance only by simply testing and righting the positions among the probes, and being convenient to use, when the wafer probe card is pressed down (possibly the wafer to be tested is lifted up) to a certain degree, the main probe and the first auxiliary probe are directly contacted to form an alarm loop, namely the main probe and the first auxiliary probe can play a role of circuit switch, and can be more conveniently externally connected with a reactor circuit, such as an acousto-optic alarm or directly control the wafer probe card to stop pressing down, the circuit transformation cost is low, and the universal property is higher. The invention also provides wafer detection equipment with the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a wafer probe card according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another embodiment of a wafer probe card according to the present invention;
FIG. 3 is a cross-sectional view of a step in the operation of a wafer probe card according to the present invention;
FIG. 4 is a schematic circuit diagram of a wafer probe card according to an embodiment of the present invention;
FIG. 5 is a circuit diagram of a wafer probe card according to another embodiment of the present invention;
fig. 6 is a schematic circuit diagram of a wafer inspection apparatus according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the present invention is to provide a wafer probe card, wherein a schematic structural diagram of one embodiment of the wafer probe card is shown in fig. 1, which is called as a first embodiment, and includes a device probe 10 and a monitoring probe cluster;
the device probe 10 can be connected with a microcircuit on the surface of a wafer to be tested to form a testing loop so as to detect the wafer to be tested;
the monitoring probe cluster comprises a main probe 21 and a first auxiliary probe 22;
the lowermost end of the first auxiliary probe 22 is higher than the device probe 10, and the lowermost end of the main probe 21 is lower than the device probe 10;
the main probe 21 is an inclined probe, after the main probe 21 is contacted with the wafer to be tested, as the wafer probe card continues to be pressed down, the main probe 21 slides along a first direction, and the first auxiliary probe 22 is located on a sliding path of the main probe 21 along the first direction;
when the main probe 21 contacts with the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe 21 contacts with the first auxiliary probe 22 to form an alarm loop.
The probes in fig. 1 can be divided into two parts, i.e., a probe body and a probe tip, by taking the bent portion as a boundary, and other structures (such as a PCB, epoxy, etc.) of the wafer probe card in fig. 1 are simplified and represented by a cube, which is the same in the following figures and will not be described again.
As a preferred embodiment, the main probe 21 is a flexible probe; main probe 21 in this application need bear certain external force, and to deformation takes place for the first direction, consequently, adopts flexible probe to promote greatly main probe 21's life avoids the fish tail simultaneously await measuring the wafer surface, the guarantee the integrality of awaiting measuring the wafer. Furthermore, the flexible probe is a beryllium copper alloy probe, and the beryllium copper alloy has good conductivity and ductility.
In addition, the first auxiliary probe 22 is a tungsten needle or a rhenium tungsten needle, which has a low price and a low cost while ensuring a certain conductivity, and a hard probe can be selected because the first auxiliary probe 22 does not contact with the wafer to be tested.
More specifically, the included angle between the main probe 21 and the vertical direction is in a range of 8 degrees to 12 degrees, including an end point value, such as any one of 8.0 degrees, 10.2 degrees, or 12.0 degrees, it should be noted that if the angle is set too large, because the lowest end of the main probe 21 is lower than the device probe 10, the length of the main probe 21 is too long, which increases the cost and the risk of breaking the probe, but if the angle is too small, the component force along the surface direction of the wafer to be tested is insufficient, which causes the main probe 21 to seize the probe or scratch the wafer to be tested, and the above range is the optimal range after a large number of theoretical calculations and actual tests.
In addition, the tip of the main probe 21 is provided with a buffer cap, and the buffer cap can further reduce the possibility that the main probe 21 scratches the wafer to be tested, thereby improving the yield of the wafer.
The wafer probe card provided by the invention comprises a device probe 10 and a monitoring probe cluster; the device probe 10 can be connected with a microcircuit on the surface of a wafer to be tested to form a test loop so as to detect the wafer to be tested; the monitoring probe cluster comprises a main probe 21 and a first auxiliary probe 22; the lowermost end of the first auxiliary probe 22 is higher than the device probe 10, and the lowermost end of the main probe 21 is lower than the device probe 10; the main probe 21 is an inclined probe, after the main probe 21 is contacted with the wafer to be tested, as the wafer probe card continues to be pressed down, the main probe 21 slides along a first direction, and the first auxiliary probe 22 is located on a sliding path of the main probe 21 along the first direction; when the main probe 21 contacts the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe 21 contacts and is connected with the first auxiliary probe 22 to form an alarm loop. The invention can realize the distance measurement of the wafer probe card and the wafer to be tested only by installing a plurality of probes on the wafer probe card, and communicate a new electric signal loop to facilitate subsequent alarm or signal control when the distance is too close, thereby avoiding the bending of the probes on the wafer probe card, ensuring the service life of the wafer probe card, having low equipment cost, realizing debugging and maintenance only by simply testing and righting the positions among the probes, and being convenient to use, when the wafer probe card is pressed down to a certain degree, the main probe 21 and the first auxiliary probe 22 are directly contacted to form an alarm loop, namely the main probe 21 and the first auxiliary probe 22 can play a role of a circuit switch, and can be more conveniently externally connected with a reactor circuit, such as an acousto-optic alarm or directly control the wafer probe card to stop pressing, the circuit transformation cost is low, and the universal property is higher.
Of course, the wafer probe card can be pressed downwards, or the wafer tray can be lifted upwards, so that the distance between the probe card and the wafer tray is reduced to realize the needle pressing. Other directional movements are possible (e.g., edge extension probes 31, preventing pin strikes, probe card motion, or wafer pallet motion, as described below).
On the basis of the first embodiment, the monitoring probe cluster is further improved to obtain a second embodiment, a schematic structural diagram of which is shown in fig. 2 and includes a device probe 10 and a monitoring probe cluster;
the device probe 10 can be connected with a microcircuit on the surface of a wafer to be tested to form a test loop so as to detect the wafer to be tested;
the monitoring probe cluster comprises a main probe 21 and a first auxiliary probe 22;
the lowermost end of the first auxiliary probe 22 is higher than the device probe 10, and the lowermost end of the main probe 21 is lower than the device probe 10;
the main probe 21 is an inclined probe, after the main probe 21 is contacted with the wafer to be tested, as the wafer probe card continues to be pressed down, the main probe 21 slides along a first direction, and the first auxiliary probe 22 is located on a sliding path of the main probe 21 along the first direction;
when the main probe 21 contacts with the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe 21 contacts with and is connected with the first auxiliary probe 22 to form an alarm loop;
the monitoring probe cluster further includes a second auxiliary probe 23;
the second auxiliary probe 23 is in contact connection with the main probe 21 when the main probe 21 is not in contact with the wafer to be tested, so as to form a standby loop;
when the main probe 21 is in contact with the wafer to be tested and starts to slide along the first direction, the contact between the second auxiliary probe 23 and the main probe 21 is broken.
The difference between the present embodiment and the foregoing embodiment is that the second auxiliary probe 23 is added to the monitoring probe cluster in the present embodiment, and the rest of the structure is the same as that in the foregoing embodiment, and is not repeated herein.
The second auxiliary probe 23 is a tungsten needle or a rhenium tungsten needle, which has a low price and a low cost while ensuring a certain conductivity, and at the same time, the second auxiliary probe 23 does not contact with the wafer to be tested, so a hard probe can be selected.
In this embodiment, a second auxiliary probe 23 is additionally provided, which is in contact with the main probe 21 in a non-contact state, and a standby loop formed by the second auxiliary probe 23 and the main probe 21 can indicate whether the monitoring probe cluster is reset normally when the wafer probe card is not in contact with the wafer to be detected, so as to ensure normal operation of the wafer probe card, and can play a role in reminding when the wafer probe card is pressed down, and when an electrical signal of the standby loop disappears, it means that the main probe 21 is in contact with the wafer to be detected and starts to slide, so as to provide more data support for testing.
In the process of gradually pressing down the wafer probe card, the monitoring probe cluster has three states, wherein the first state is that the main probe 21 is contacted with the second auxiliary probe 23; the second is that the main probe 21 is not in contact with the two auxiliary probes; the third is that the main probe 21 contacts the first auxiliary probe 22, thereby indirectly determining the distance state between the test probe and the wafer surface.
The working flow of the wafer probe card is briefly described as follows:
(1) when the main probe 21 is not in contact with the wafer, the main probe 21 is in contact with the second auxiliary probe 23 to form a loop signal A, and feedback that the device probe 10 is not in contact with the surface of the wafer is given;
(2) when the main probe 21 is pressed down a small distance, for example, 10 to 20 micrometers, and at the same time, the main probe 21 also moves forward, and the main probe 21 is separated from the second auxiliary probe 23, and the loop signal a is disconnected; the relationship between the device probe 10 and the wafer surface at this time is: but also a few microns to have been depressed by a few microns.
(3) When the probe card is pressed down for a certain distance, the main probe 21 is contacted with the first auxiliary probe 22, and a loop signal B is formed between the main probe 21 and the first auxiliary probe 22, so that the 'press-down limit' is fed back and an alarm is given at the same time. The device probe 10 reaches a predetermined limit of the depression distance, such as a limit set to 40 microns + -10 microns (allowing for tolerances) of depression of the device probe 10 after contacting the wafer surface. The principle is shown in fig. 4, wherein Vs in fig. 4 is a power supply and R is other power consuming elements. When the alarm is given, an instruction can be set: the test machine moves the axis and stops moving or resumes the position of last state immediately to avoid further damaging the probe.
As a preferred embodiment, the projection extending direction of the main probe 21 on the plane perpendicular to the first direction is different from the projection extending direction of the other auxiliary probes, please refer to fig. 3, the projection of the main probe 21 and the first probe on the plane perpendicular to the first direction is changed into an intersecting shape, which can better ensure that the main probe 21 intersects with the first auxiliary probe 22 during the traveling process, and improve the stability of the device operation. Referring to fig. 3 in conjunction with the previous workflow of the monitoring probe cluster, fig. 3 shows three states from top to bottom in the flow of the main probe 21 contacting the second auxiliary probe 23, the main probe 21 not contacting any probe, and the main probe 21 contacting the first auxiliary probe 22, wherein the black dots represent the contact points of the main probe 21 and the corresponding auxiliary probes. Fig. 3 is a cross-sectional view perpendicular to the first direction, and only the needle tip is shown in fig. 3, with the remaining structure simplified.
The monitor probe cluster and the device probe 10 may be made of the same material or different materials.
When the main probe 21 starts to contact the wafer to be tested, the device probe 10 is not yet in contact with the wafer to be tested, the main probe 21 slides on the surface of the wafer to be tested along with the pressing, and after sliding for a certain distance, the main probe 21 is separated from the second auxiliary probe 23, when the main probe is in contact with the first auxiliary probe 22, the device probe 10 is pressed to the limit of recoverable deformation (namely, the pressing can cause obvious metal fatigue, and the distance ratio of the pressing limit is 40 +/-10 micrometers), and at this time, an alarm is given, and of course, when the main probe 21 is in contact with the first auxiliary probe 22, neither the first auxiliary probe 22 nor the second auxiliary probe 23 is in contact with the surface of the wafer to be tested.
On the basis of the second embodiment, the wafer probe card is further improved to obtain a third embodiment, and a schematic structural diagram of the third embodiment is shown in fig. 5, and the third embodiment includes a device probe 10 and a monitoring probe cluster;
the device probe 10 can be connected with a microcircuit on the surface of a wafer to be tested to form a test loop so as to detect the wafer to be tested;
the monitoring probe cluster comprises a main probe 21 and a first auxiliary probe 22;
the lowermost end of the first auxiliary probe 22 is higher than the device probe 10, and the lowermost end of the main probe 21 is lower than the device probe 10;
the main probe 21 is an inclined probe, after the main probe 21 is contacted with the wafer to be tested, as the wafer probe card continues to be pressed down, the main probe 21 slides along a first direction, and the first auxiliary probe 22 is located on a sliding path of the main probe 21 along the first direction;
when the main probe 21 contacts with the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe 21 contacts with and is connected with the first auxiliary probe 22 to form an alarm loop;
the monitoring probe cluster further includes a second auxiliary probe 23;
the second auxiliary probe 23 is in contact connection with the main probe 21 when the main probe 21 is not in contact with the wafer to be tested, so as to form a standby loop;
when the main probe 21 is in contact with the wafer to be tested and starts to slide along the first direction, the contact between the second auxiliary probe 23 and the main probe 21 is broken;
the wafer probe card also comprises an edge control cluster;
the edge control cluster is positioned at the edge of the wafer probe card and comprises an edge extension probe 31 and an edge auxiliary probe 32;
the edge extension probe 31 extends out of the projected edge of the wafer probe card in a downward inclination manner, when the wafer probe card touches an obstacle in the horizontal direction, the edge extension probe 31 is pressed by the obstacle and bends towards the second direction, and the edge auxiliary probe 32 is located on a deformation path of the edge extension probe 31 bending in the second direction;
when the edge extension probe 31 is bent to the first deformation amount in the second direction, the edge extension probe 31 is in contact connection with the edge auxiliary probe 32 to form a contact early warning loop.
The edge control cluster can be arranged on the bottom surface of the wafer probe card and extends out of the projected edge of the wafer probe card in a downward inclined mode, and can also be directly arranged on the side wall of the wafer probe card.
It should be noted that the "projection of the wafer probe card" in the foregoing refers to the projection of the wafer probe card on the extension plane thereof.
The difference between this embodiment and the above embodiment is that the edge control cluster is added to the wafer probe card in this embodiment, and the rest of the structure is the same as that in the above embodiment, and is not described herein again.
In the process of using the wafer probe card to detect the wafer, operation errors often occur, and the probe collides with a protruding object higher than the periphery of the wafer or the chip, that is, a 'striker' occurs, so that the probe is damaged.
It should be noted that the first deformation amount in the present invention, which is a measure of the deformation of the edge extension probe 31, may include different measurement criteria, such as the included angle between the edge extension probe 31 and the vertical direction, the moving distance of the tip, or the bending arc of the probe, etc., which are not limited herein, and can be selected according to the actual situation.
Preferably, the edge extension probe 31 is a flexible probe. Edge extension probe 31 in this application need bear certain external force, and to deformation takes place for the second direction, consequently, adopts flexible probe to promote greatly edge extension probe 31's life. Still further, the edge extension probe 31 is a beryllium copper alloy probe, and the beryllium copper alloy has good conductivity and good ductility.
In addition, the edge auxiliary probe 32 is a tungsten needle or a rhenium tungsten needle; the tungsten needle or the rhenium tungsten needle has low price and low cost while ensuring certain conductivity.
As a preferred embodiment, the extension direction of the projection of the edge extension probe 31 on the plane perpendicular to the second direction is different from the extension direction of the projection of the edge auxiliary probe 32; the method can ensure that the edge extension probe 31 is intersected with the edge auxiliary probe 32, and improves the working stability of the edge control cluster pair.
The invention also provides wafer detection equipment, which comprises any one of the wafer probe cards. The wafer probe card provided by the invention comprises a device probe 10 and a monitoring probe cluster; the device probe 10 can be connected with a microcircuit on the surface of a wafer to be tested to form a test loop so as to detect the wafer to be tested; the monitoring probe cluster comprises a main probe 21 and a first auxiliary probe 22; the lowermost end of the first auxiliary probe 22 is higher than the device probe 10, and the lowermost end of the main probe 21 is lower than the device probe 10; the main probe 21 is an inclined probe, after the main probe 21 is contacted with the wafer to be tested, as the wafer probe card continues to be pressed down, the main probe 21 slides along a first direction, and the first auxiliary probe 22 is located on a sliding path of the main probe 21 along the first direction; when the main probe 21 contacts with the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe 21 contacts with the first auxiliary probe 22 to form an alarm loop. The invention can realize the distance measurement of the wafer probe card and the wafer to be tested only by installing a plurality of probes on the wafer probe card, and communicate a new electric signal loop to facilitate subsequent alarm or signal control when the distance is too close, thereby avoiding the bending of the probes on the wafer probe card, ensuring the service life of the wafer probe card, having low equipment cost, realizing debugging and maintenance only by simply testing and righting the positions among the probes, and being convenient to use, when the wafer probe card is pressed down to a certain degree, the main probe 21 and the first auxiliary probe 22 are directly contacted to form an alarm loop, namely the main probe 21 and the first auxiliary probe 22 can play a role of a circuit switch, and can be more conveniently externally connected with a reactor circuit, such as an acousto-optic alarm or directly control the wafer probe card to stop pressing, the circuit transformation cost is low, and the universal property is higher.
Fig. 6 is a schematic diagram of the wafer inspection apparatus, and as shown in fig. 6, when the device probes 10 on the probe card are connected to the corresponding metal electrode plates on the wafer, the "positive and negative poles" of the device are communicated with the probes. The probe is communicated with the pin header of the PCB on the probe card and is connected with the test module in a cable mode (the pin header and the flat cable in the figure) and the like, so that a loop is formed. The test module can be a PCB test board (on which devices such as an onboard power supply and a resistor are arranged), and can also be a system formed by a test switch board card and a source meter. When the device probes 10 on the probe card contact the metal plate of the corresponding device on the wafer, a loop is formed to test the relevant performance of the device, such as resistance, capacitance, current, etc.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The wafer probe card and the wafer inspection apparatus provided by the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A wafer probe card is characterized by comprising a device probe and a monitoring probe cluster;
the device probe can be connected with a microcircuit on the surface of the wafer to be tested to form a testing loop so as to detect the wafer to be tested;
the monitoring probe cluster comprises a main probe and a first auxiliary probe;
the lowest end of the first auxiliary probe is higher than the device probe, and the lowest end of the main probe is lower than the device probe;
the main probe is an inclined probe, after the main probe is contacted with the wafer to be tested, the main probe slides along a first direction along with the continuous pressing of the wafer probe card, and the first auxiliary probe is positioned on a sliding path of the main probe along the first direction;
and when the main probe is contacted with the wafer to be tested and the distance between the wafer probe card and the wafer to be tested is continuously shortened by a first distance, the main probe is contacted and connected with the first auxiliary probe to form an alarm loop.
2. The wafer probe card of claim 1, wherein the monitoring probe cluster further comprises a second auxiliary probe;
the second auxiliary probe is in contact connection with the main probe when the main probe is not in contact with the wafer to be tested, so that a standby loop is formed;
when the main probe is in contact with the wafer to be tested and starts to slide along the first direction, the contact between the second auxiliary probe and the main probe is broken.
3. The wafer probe card of claim 1, further comprising an edge control cluster;
the edge control cluster is positioned at the edge of the wafer probe card and comprises an edge extension probe and an edge auxiliary probe;
the edge extension probe is downwards inclined to extend out of the edge of the projection of the wafer probe card, when the wafer probe card touches an obstacle in the horizontal direction, the edge extension probe is pressed by the obstacle and bends towards the second direction, and the edge auxiliary probe is positioned on a deformation path of the edge extension probe bending towards the second direction;
when the edge extension probe is bent to the first deformation amount in the second direction, the edge extension probe is in contact connection with the edge auxiliary probe to form a contact early warning loop.
4. The wafer probe card of claim 1, wherein the primary probes are flexible probes;
when the wafer probe card includes the edge control cluster, the edge extension probes are flexible probes.
5. The wafer probe card of claim 4, wherein the flexible probes are beryllium copper alloy probes.
6. The wafer probe card of claim 1, wherein the first auxiliary probe and/or the second auxiliary probe is a tungsten needle or a rhenium tungsten needle;
when the wafer probe card comprises the edge control cluster, the edge auxiliary probe is a tungsten needle or a rhenium tungsten needle.
7. The wafer probe card of claim 1, wherein the primary probes are angled from 8 degrees to 12 degrees, inclusive, from vertical.
8. The wafer probe card of claim 1, wherein the main probe tips are provided with buffer caps.
9. The wafer probe card according to any of claims 1 to 8, wherein a projection of the main probe on a plane perpendicular to the first direction extends in a direction different from a projection of the other auxiliary probes;
when the wafer probe card comprises the edge control cluster, the extension direction of the projection of the edge extension probe on the plane perpendicular to the second direction is different from the extension direction of the projection of the edge auxiliary probe.
10. A wafer inspection apparatus, characterized in that the wafer inspection apparatus comprises a wafer probe card according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210587180.2A CN114859087A (en) | 2022-05-27 | 2022-05-27 | Wafer probe card and wafer detection equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210587180.2A CN114859087A (en) | 2022-05-27 | 2022-05-27 | Wafer probe card and wafer detection equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114859087A true CN114859087A (en) | 2022-08-05 |
Family
ID=82640634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210587180.2A Pending CN114859087A (en) | 2022-05-27 | 2022-05-27 | Wafer probe card and wafer detection equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114859087A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117665544A (en) * | 2024-02-01 | 2024-03-08 | 合肥晶合集成电路股份有限公司 | Wafer acceptance test method |
-
2022
- 2022-05-27 CN CN202210587180.2A patent/CN114859087A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117665544A (en) * | 2024-02-01 | 2024-03-08 | 合肥晶合集成电路股份有限公司 | Wafer acceptance test method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6121058A (en) | Method for removing accumulated solder from probe card probing features | |
| US7626406B2 (en) | Probing method, probe apparatus and storage medium | |
| US7868635B2 (en) | Probe | |
| CN114859087A (en) | Wafer probe card and wafer detection equipment | |
| JPWO2006095441A1 (en) | Probe for energization test and electrical connection device using the same | |
| JP4313827B2 (en) | Inspection method of semiconductor device having spherical external electrode | |
| JP3962628B2 (en) | Probe card, semiconductor test system, and probe contact method | |
| CN101566667A (en) | MOS component testing method | |
| KR20140007054A (en) | Electrical contactor and contact method of the same | |
| US7256591B2 (en) | Probe card, having cantilever-type probe and method | |
| JP2007095938A (en) | Tester, prober, wafer test system and electrical contact position detection method | |
| CN115308456A (en) | Vertical probe and probe card | |
| US20230266361A1 (en) | Probe pin having improved gripping structure | |
| JP4536525B2 (en) | Semiconductor device test apparatus and test method | |
| JP2007317681A (en) | Probe card, and semiconductor element inspection method employing it | |
| CN217007577U (en) | Prevent membrane probe head and membrane probe card that probe drops | |
| JPH06163651A (en) | Semiconductor wafer inspection device | |
| JP2009145069A (en) | Probe apparatus | |
| JP2000111574A (en) | Probe card | |
| KR101033909B1 (en) | Probe needle | |
| KR100523609B1 (en) | Probe card of a prober system | |
| CN114184821A (en) | Probe card for wafer test | |
| JPH09281142A (en) | Probe card inspecting system | |
| JP2012186354A (en) | Semiconductor manufacturing apparatus and semiconductor device manufacturing method | |
| CN114088997A (en) | Electrical contact structure of electrical contact and electrical connection device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |