CN114844482A - Wafer for high-frequency crystal resonator and production control system thereof - Google Patents
Wafer for high-frequency crystal resonator and production control system thereof Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Abstract
The invention discloses a wafer for a high-frequency crystal resonator and a production control system thereof, which relate to the technical field of quartz crystal resonators and comprise a parameter detection module, a production tracking module and an alarm module; the parameter detection module is used for respectively detecting the quality of each wafer based on a plurality of detection tasks, and stamping a timestamp on a corresponding signal and detection data and sending the timestamp to an upper computer; the detection tasks comprise size detection, appearance detection and resistance detection; wherein the detection data are provided with equipment identifiers; the production tracking module is used for acquiring detection data which are generated by the parameter detection module and have the same equipment identification for production tracking analysis, if the production deviation YD is larger than a deviation threshold, the trend that unqualified wafers are produced in the corresponding production equipment is determined, and a production abnormal signal is generated so as to remind a manager of the mobile terminal to overhaul the production equipment, and the quality and the qualification rate of the wafers are improved.
Description
Technical Field
The invention relates to the technical field of quartz crystal resonators, in particular to a wafer for a high-frequency crystal resonator and a production control system thereof.
Background
The main electrical performance parameters of the crystal oscillator, such as frequency, resistance, etc., are determined by the processing characteristics of the wafer. The unprocessed wafer has poor conductivity, and a layer of silver is plated on the partial surface of the wafer to be used as an electrode of the wafer in the manufacturing process of the crystal resonator, so that the crystal forms an inverse piezoelectric effect under the action of an electric field.
When the resistance of the crystal resonator is too large, the phenomenon of no "oscillation" or unstable operation is easily caused, and the power consumption of the crystal resonator is smaller as the corresponding resistance value is smaller, so that the reduction of the resistance of the crystal resonator is the goal pursued by manufacturers. At present, the wafer used by the SMD2016-39MHz type high frequency crystal resonator generally uses the electrode with the length × width of 1.350mm × 0.897mm (the error is ± 0.02mm), but the average value of the resistance is larger, about 80 Ω, the distribution of the crystal resistance value is not concentrated, more products exceeding the resistance requirement of the customer are produced, and the qualification rate is very low; based on the above disadvantages, the present invention provides a wafer for a high frequency crystal resonator and a production control system thereof.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a wafer for a high-frequency crystal resonator and a production control system thereof.
In order to achieve the above object, an embodiment according to a first aspect of the present invention provides a wafer production control system for a high-frequency crystal resonator, including an upper computer, a parameter detection module, a cloud platform, a production tracking module, and an alarm module;
the parameter detection module comprises a control bottom plate, a bus communication unit and detection units which are respectively and electrically connected with the plurality of wafers, wherein the detection units and the control bottom plate are respectively in communication connection with an upper computer through the bus communication unit; wherein each wafer carries a device identification;
the parameter detection module is used for respectively detecting the quality of each wafer based on a plurality of detection tasks and stamping corresponding signals and detection data with time stamps and sending the signals and the detection data to an upper computer; the upper computer is responsible for displaying, storing and uploading detection data to the cloud platform; the detection tasks comprise size detection, appearance detection and resistance detection; wherein the detection data are provided with equipment identifiers;
the production tracking module is used for acquiring detection data with the same equipment identifier generated by the parameter detection module to perform production tracking analysis, and calculating to obtain a production deviation value YD corresponding to production equipment;
if YD is larger than the deviation threshold value, determining that the trend of producing unqualified wafers exists in the corresponding production equipment, and generating a production abnormal signal; the production tracking module is used for sending the production abnormal signal to the associated mobile terminal and the cloud platform so as to remind a manager of the mobile terminal to overhaul the production equipment.
Further, the specific detection steps of the parameter detection module are as follows:
the control bottom plate respectively issues a detection starting instruction to each detection unit; in response to receiving the start detection instruction, the detection unit analyzes and executes the received detection task, specifically:
collecting size information of the wafer; comparing the collected size information with standard size information stored in a database, and if the comparison is consistent, generating a size qualified signal; otherwise, generating a signal with unqualified size;
acquiring image information of a wafer, and judging whether the wafer has scratches, cracks, stains and broken edges based on an image recognition technology; if yes, generating an appearance unqualified signal; otherwise, generating an appearance qualified signal;
testing the wafer resistance, and if the wafer resistance obtained by testing is in a standard range, generating a resistance qualified signal; otherwise, a resistance fail signal is generated.
Further, the specific analysis steps of the production tracking module are as follows:
acquiring detection data with the same equipment identifier generated by a parameter detection module; when a quality unqualified signal is monitored, automatically counting down, wherein the counting down is D1, and D1 is a preset value;
if a new quality unqualified signal is monitored in the countdown stage, automatically returning the countdown to the original value, and carrying out countdown again according to D1; otherwise, the count-down returns to zero, and the counting is stopped;
counting the occurrence frequency of unqualified signals in the countdown stage to be C1;
intercepting a time period between adjacent unqualified quality signals as a buffer period; counting the number of the wafers produced by the corresponding production equipment in the buffering time period as quality buffering frequency Vi; comparing the quality buffer frequency Vi with a buffer threshold value, calculating to obtain a difference buffering coefficient CX, and calculating to obtain a production bias value YD corresponding to the production equipment by using a formula YD which is C1 × a3+ CX × a4, wherein a3 and a4 are coefficient factors.
Further, if the corresponding detection data simultaneously carries a dimension qualified signal, an appearance qualified signal and a resistance qualified signal, the quality of the corresponding wafer is qualified, and the quality qualified signal is fed back to the production tracking module; otherwise, feeding back a signal with unqualified quality to the production tracking module.
Further, the calculation method of the slowness difference coefficient CX is as follows:
counting the number of times that Vi is smaller than the buffer threshold value as L1; when Vi is smaller than the buffering threshold value, obtaining the difference value between Vi and the buffering threshold value and summing to obtain a total difference and buffering value CH, and calculating to obtain a difference and buffering coefficient CX by using a formula CX-L1 × a1+ CH × a2, wherein a1 and a2 are coefficient factors.
Further, a wafer for a high-frequency crystal resonator, which is manufactured by the production control system, comprises a wafer substrate and a plated electrode; wherein the length of the wafer substrate is 1.350mm, and the width of the wafer substrate is 0.897 mm; the surface of the wafer substrate is provided with a coated electrode; the length of the coated electrode is 0.80-0.90mm, and the width of the coated electrode is 0.60-0.66 mm; wherein the center of the coated electrode coincides with the center of the wafer substrate.
Compared with the prior art, the invention has the beneficial effects that:
1. the parameter detection module of the invention respectively detects the quality of each wafer based on a plurality of detection tasks, wherein the detection tasks comprise size detection, appearance detection and resistance detection; whether the wafer is qualified or not is detected on the basis of multiple aspects, and performance parameters of the wafer are improved;
2. the production tracking module is used for acquiring detection data with the same equipment identifier generated by the parameter detection module to perform production tracking analysis, and automatically counting down when a quality unqualified signal is monitored; counting the occurrence frequency of unqualified quality signals in the countdown stage and the number of wafers produced by corresponding production equipment in a time period between adjacent unqualified quality signals, calculating to obtain a production deviation value YD of the corresponding production equipment through related processing, and if YD is greater than a deviation threshold value, determining that the corresponding production equipment has the tendency of producing unqualified wafers, and generating a production abnormal signal; the cloud platform controls the alarm module to give an alarm after receiving the production abnormal signal so as to remind a manager of the mobile terminal to overhaul the production equipment, and the quality and the qualification rate of the wafer are improved;
3. the wafer prepared by the invention comprises a wafer substrate and a film-coated electrode; the length of the wafer substrate is 1.350mm, and the width of the wafer substrate is 0.897 mm; the surface of the wafer substrate is provided with a coated electrode; the length of the coated electrode is 0.80-0.90mm, and the width of the coated electrode is 0.60-0.66 mm; wherein the center of the film-coated electrode coincides with the center of the wafer substrate; the level of the resistance of the crystal resonator manufactured by the wafer is obviously reduced, the average value of 20 measured resistances is about 35 omega through random extraction, the resistance is obviously reduced and distributed intensively, the wafer meets the requirements of customers, has the advantages of small resistance and low power consumption, and improves the phenomenon that the resistance of an SMD2016-39MHz product seriously exceeds the standard.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a system block diagram of a wafer production control system for a high frequency crystal resonator according to the present invention.
FIG. 2 is a schematic structural diagram of a high frequency crystal resonator chip according to the present invention.
In the figure: 1. a chip substrate; 2. coating an electrode; 3. the center of the wafer substrate.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 2, a wafer production control system for a high-frequency crystal resonator includes an upper computer, a parameter detection module, a cloud platform, a production tracking module, and an alarm module;
the upper computer in the embodiment preferably selects an industrial PC, the industrial PC is responsible for displaying, storing and uploading detected data to the cloud platform, the industrial PC provides a uniform display interface for data obtained after the parameter detection module detects the wafers in batches, so that result data concerned by a user can be displayed simply and clearly, application software of various devices can be unified, all links of the whole production control system can use the same software, and users can adapt to operation software of different links quickly; wherein each wafer carries a device identification;
the parameter detection module comprises a control bottom plate, a bus communication unit and detection units which are respectively and electrically connected with the plurality of wafers, wherein the detection units and the control bottom plate are respectively in communication connection with an upper computer through the bus communication unit;
the parameter detection module is used for respectively detecting the quality of each wafer based on a plurality of detection tasks and sending detection data to an upper computer; the detection tasks comprise size detection, appearance detection and resistance detection; the specific detection steps are as follows:
the control bottom plate respectively issues a detection starting instruction to each detection unit; in response to receiving the start detection instruction, the detection unit analyzes and executes the received detection task, specifically:
the method comprises the following steps: collecting the size information of the wafer by an infrared scanning probe;
comparing the acquired size information with standard size information stored in a database, and if the acquired size information is consistent with the standard size information, generating a qualified size signal; if the comparison is inconsistent, generating a signal with unqualified size;
step two: acquiring image information of a wafer through a camera, and judging whether the wafer has defects such as scratches, cracks, stains, broken edges and the like based on an image recognition technology; if yes, generating an appearance unqualified signal; if not, generating an appearance qualified signal;
step three: testing the wafer resistance through a resistance tester, and if the wafer resistance obtained through testing is within a standard range, generating a resistance qualified signal; otherwise, generating a resistance disqualification signal;
the parameter detection module is used for stamping a timestamp on the corresponding signal and detection data and sending the timestamp to an upper computer; wherein the detection data are provided with equipment identifiers;
the production tracking module is connected with the parameter detection module and used for acquiring detection data with the same equipment identifier generated by the parameter detection module to perform production tracking analysis and judging whether the corresponding equipment has the trend of producing unqualified wafers, and the specific analysis steps are as follows:
acquiring detection data with the same equipment identifier generated by a parameter detection module, if the corresponding detection data simultaneously carries a qualified dimension signal, a qualified appearance signal and a qualified resistance signal, indicating that the corresponding wafer is qualified in quality, and feeding back the qualified quality signal to a production tracking module; otherwise, feeding back a signal with unqualified quality to the production tracking module;
when a signal with unqualified quality is monitored, automatically counting down, wherein the count down is D1, and D1 is a preset value; for example, D1 takes the value 10; every time one detection data is collected, the count-down is reduced by one;
continuously monitoring the unqualified quality signals in the countdown stage, if a new unqualified quality signal is monitored, automatically returning the countdown to the original value, and counting down again according to D1; otherwise, the count-down returns to zero, and the counting is stopped;
counting the occurrence frequency of unqualified quality signals in a countdown stage to be C1, and intercepting a time period between adjacent unqualified quality signals as a buffer time period; counting the number of the wafers produced by the corresponding production equipment in the buffering time period as quality buffering frequency Vi; in this embodiment, the wafer produced by the corresponding production equipment in the buffering period is a qualified wafer; comparing the quality buffering frequency Vi with a buffering threshold value;
counting the number of times that Vi is smaller than the buffer threshold value as L1; when Vi is smaller than the buffering threshold value, obtaining a difference value between Vi and the buffering threshold value and summing to obtain a total difference and buffering value CH, and calculating to obtain a difference and buffering coefficient CX by using a formula CX-L1 × a1+ CH × a2, wherein a1 and a2 are coefficient factors;
calculating a production deviation value YD corresponding to production equipment by using a formula YD which is C1 × a3+ CX × a4, wherein a3 and a4 are coefficient factors; comparing the production offset YD to an offset threshold; if YD is larger than the deviation threshold value, determining that the trend of producing unqualified wafers exists in the corresponding production equipment, and generating a production abnormal signal; the production abnormal signal carries a corresponding equipment identifier;
the production tracking module is used for sending the production abnormal signal to the associated mobile terminal and the cloud platform, and the cloud platform receives the production abnormal signal and then controls the alarm module to give an alarm so as to remind a manager of the mobile terminal to overhaul the production equipment, so that the quality and the qualification rate of the wafer are improved.
A high frequency crystal resonator wafer is manufactured by the above wafer production control system for high frequency crystal resonator, and comprises a wafer substrate 1 and a plated electrode 2;
wherein, the length of the wafer substrate 1 is 1.350mm, and the width is 0.897 mm; the surface of the wafer substrate 1 is provided with a coated electrode 2; the length of the coated electrode 2 is 0.80-0.90mm, and the width of the coated electrode is 0.60-0.66 mm; wherein the center of the film-coated electrode 2 coincides with the center 3 of the wafer substrate;
the invention increases the overall dimension and the electrode of the wafer to the utmost extent, the resistance level of the crystal resonator manufactured by the wafer is obviously reduced, the average value of 20 measured resistances is about 35 omega through random extraction, the resistances are obviously reduced and distributed intensively, the invention meets the requirements of customers, has the advantages of small resistance and low power consumption, and improves the phenomenon that the resistance of SMD2016-39MHz products seriously exceeds the standard.
The above formulas are all calculated by removing dimensions and taking numerical values thereof, the formula is a formula which is obtained by acquiring a large amount of data and performing software simulation to obtain the closest real situation, and the preset parameters and the preset threshold value in the formula are set by the technical personnel in the field according to the actual situation or obtained by simulating a large amount of data.
The working principle of the invention is as follows:
when the wafer for the high-frequency crystal resonator and the production control system thereof work, the parameter detection module respectively detects the quality of each wafer based on a plurality of detection tasks and sends corresponding signals and detection data to an upper computer by stamping time stamps; the detection tasks comprise size detection, appearance detection and resistance detection; the industrial PC is responsible for displaying, storing and uploading the detection data to the cloud platform; wherein the detection data are provided with equipment identifiers;
the production tracking module is used for acquiring the detection data with the same equipment identifier generated by the parameter detection module to perform production tracking analysis and judging whether the corresponding equipment has the trend of producing unqualified wafers; if the corresponding detection data simultaneously carries a dimension qualified signal, an appearance qualified signal and a resistance qualified signal, the quality of the corresponding wafer is qualified, and the quality qualified signal is fed back to the production tracking module; when a quality unqualified signal is monitored, automatically counting down; counting the occurrence frequency of unqualified quality signals in a countdown stage to be C1, and intercepting a time period between adjacent unqualified quality signals as a buffer period; counting the number of the wafers produced by the corresponding production equipment in the buffering time period as quality buffering frequency Vi; comparing the quality buffer frequency Vi with a buffer threshold value, calculating to obtain a difference buffering coefficient CX through related processing, calculating to obtain a production deviation value YD of corresponding production equipment by using a formula YD which is C1 × a3+ CX × a4, and if YD is greater than the deviation value threshold value, determining that the trend of producing unqualified wafers exists in the corresponding production equipment, and generating a production abnormal signal; the cloud platform controls the alarm module to give an alarm after receiving the production abnormal signal so as to remind a manager of the mobile terminal to overhaul the production equipment, and the quality and the qualification rate of the wafer are improved;
the wafer manufactured by the production control system comprises a wafer substrate 1 and a coated electrode 2, wherein the length of the wafer substrate 1 is 1.350mm, and the width of the wafer substrate 1 is 0.897 mm; the surface of the wafer substrate 1 is provided with a film-coated electrode 2; the length of the coated electrode 2 is 0.80-0.90mm, and the width of the coated electrode is 0.60-0.66 mm; wherein the center of the film-coated electrode 2 coincides with the center 3 of the wafer substrate; the level of the resistance of the crystal resonator manufactured by the wafer is obviously reduced, the average value of 20 measured resistances is about 35 omega through random extraction, the resistance is obviously reduced and distributed intensively, the wafer meets the requirements of customers, has the advantages of small resistance and low power consumption, and improves the phenomenon that the resistance of an SMD2016-39MHz product seriously exceeds the standard.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (6)
1. A wafer production control system for a high-frequency crystal resonator is characterized by comprising an upper computer, a parameter detection module, a cloud platform, a production tracking module and an alarm module;
the parameter detection module comprises a control bottom plate, a bus communication unit and detection units which are respectively and electrically connected with the plurality of wafers, wherein the detection units and the control bottom plate are respectively in communication connection with an upper computer through the bus communication unit; wherein each wafer carries a device identification;
the parameter detection module is used for respectively detecting the quality of each wafer based on a plurality of detection tasks and stamping corresponding signals and detection data with time stamps and sending the signals and the detection data to an upper computer; the upper computer is responsible for displaying, storing and uploading detection data to the cloud platform; the detection tasks comprise size detection, appearance detection and resistance detection; wherein the detection data are provided with equipment identifiers;
the production tracking module is used for acquiring detection data with the same equipment identifier generated by the parameter detection module to perform production tracking analysis, and calculating to obtain a production deviation value YD corresponding to production equipment;
if YD is larger than the deviation threshold value, determining that the trend of producing unqualified wafers exists in the corresponding production equipment, and generating a production abnormal signal; the production tracking module is used for sending the production abnormal signal to the associated mobile terminal and the cloud platform so as to remind a manager of the mobile terminal to overhaul the production equipment.
2. The wafer production control system for the high-frequency crystal resonator according to claim 1, wherein the specific detection steps of the parameter detection module are as follows:
the control bottom plate respectively issues a detection starting instruction to each detection unit; in response to receiving the start detection instruction, the detection unit analyzes and executes the received detection task, specifically:
collecting size information of the wafer; comparing the collected size information with standard size information stored in a database, and if the comparison is consistent, generating a size qualified signal; otherwise, generating a signal with unqualified size;
acquiring image information of a wafer, and judging whether the wafer has scratches, cracks, stains and broken edges based on an image recognition technology; if yes, generating an appearance unqualified signal; otherwise, generating an appearance qualified signal;
testing the wafer resistance, and if the wafer resistance obtained by testing is in a standard range, generating a resistance qualified signal; otherwise, a resistance fail signal is generated.
3. The wafer production control system for the high-frequency crystal resonator according to claim 2, wherein the production tracking module comprises the following specific analysis steps:
acquiring detection data with the same equipment identifier generated by a parameter detection module; when a quality unqualified signal is monitored, automatically counting down, wherein the counting down is D1, and D1 is a preset value;
if a new quality unqualified signal is monitored in the countdown stage, automatically returning the countdown to the original value, and carrying out countdown again according to D1; otherwise, the count-down returns to zero, and the counting is stopped;
counting the occurrence frequency of unqualified signals in the countdown stage to be C1;
intercepting a time period between adjacent unqualified quality signals as a buffer period; counting the number of the wafers produced by the corresponding production equipment in the buffering time period as quality buffering frequency Vi; comparing the quality buffer frequency Vi with a buffer threshold value, calculating to obtain a difference buffering coefficient CX, and calculating to obtain a production bias value YD corresponding to the production equipment by using a formula YD which is C1 × a3+ CX × a4, wherein a3 and a4 are coefficient factors.
4. The wafer production control system for the high-frequency crystal resonator as claimed in claim 3, wherein if the corresponding detection data carries a dimensional qualified signal, an appearance qualified signal and a resistance qualified signal at the same time, the quality of the corresponding wafer is qualified, and the quality qualified signal is fed back to the production tracking module; otherwise, feeding back a signal with unqualified quality to the production tracking module.
5. The wafer production control system for the high-frequency crystal resonator according to claim 3, wherein the calculation method of the slowness difference coefficient CX is:
counting the number of times that Vi is smaller than the buffer threshold value as L1; when Vi is smaller than the buffering threshold value, obtaining the difference value between Vi and the buffering threshold value and summing to obtain a total difference and buffering value CH, and calculating to obtain a difference and buffering coefficient CX by using a formula CX-L1 × a1+ CH × a2, wherein a1 and a2 are coefficient factors.
6. A wafer for a high frequency crystal resonator produced by a wafer production control system for a high frequency crystal resonator according to any one of claims 1 to 5, comprising a wafer substrate (1) and a plated electrode (2); wherein the length of the wafer substrate (1) is 1.350mm, and the width of the wafer substrate is 0.897 mm; the surface of the wafer substrate (1) is provided with a film-coated electrode (2); the length of the coated electrode (2) is 0.80-0.90mm, and the width is 0.60-0.66 mm; wherein the center of the film-coated electrode (2) coincides with the center (3) of the wafer substrate.
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Cited By (2)
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| CN116273709A (en) * | 2023-04-28 | 2023-06-23 | 安徽国芯人工智能技术有限公司 | Ultra-precise pneumatic volume micro dispensing system |
| CN117549441A (en) * | 2024-01-11 | 2024-02-13 | 东晶电子金华有限公司 | Quartz crystal processing method |
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| CN116273709B (en) * | 2023-04-28 | 2023-10-20 | 安徽国芯人工智能技术有限公司 | Ultra-precise pneumatic volume micro dispensing system |
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| CN117549441B (en) * | 2024-01-11 | 2024-04-19 | 东晶电子金华有限公司 | Quartz crystal processing method |
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