CN114826230B - Ultra-wideband single-pole multi-throw radio frequency switch applying reconfigurable filter network - Google Patents

Ultra-wideband single-pole multi-throw radio frequency switch applying reconfigurable filter network Download PDF

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CN114826230B
CN114826230B CN202210463203.9A CN202210463203A CN114826230B CN 114826230 B CN114826230 B CN 114826230B CN 202210463203 A CN202210463203 A CN 202210463203A CN 114826230 B CN114826230 B CN 114826230B
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throw
pole
transistor
switch
pass
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CN114826230A (en
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王勇
王义城
王肇旿
王振宇
杨涛
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Electronic Switches (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Abstract

The invention aims to provide an ultra-wideband single-pole multi-throw radio frequency switch applying a reconfigurable filter network, and belongs to the technical field of radio frequency switches. The ultra-wideband switch is designed based on frequency band division, a filter network is introduced into a single-pole multi-throw switch, the working bandwidth of the switch is divided into a low-pass frequency band and a high-pass frequency band, corresponding branches are a low-pass branch and a high-pass branch, and a plurality of single-pole single-throw units are connected behind each branch; meanwhile, by combining with a reconfigurable filter network, the elements of the filter network are accessed when different frequency bands are switched by the switching transistor to work, so that the insertion loss of each branch in the working frequency band is better than that of the traditional single-pole multi-throw switch, and the working frequency band is expanded by two times.

Description

Ultra-wideband single-pole multi-throw radio frequency switch applying reconfigurable filter network
Technical Field
The invention belongs to the technical field of radio frequency switches, and particularly relates to an ultra-wideband single-pole multi-throw radio frequency switch applying a reconfigurable filter network.
Background
The switch is a vital component in a radio frequency integrated circuit, and a single-pole multi-throw switch formed by a field effect transistor is widely applied to a wireless communication system. The principle of the field effect transistor as a switch is very simple, and the grid electrode of the field effect transistor is connected with the control voltage V G When V G When the threshold voltage of the field effect transistor is larger than that of the field effect transistor, the field effect transistor is conducted, the channel is equivalent to a small resistor, and the switch is conducted; when V is G When the threshold voltage of the field effect transistor is smaller than that of the field effect transistor, the field effect transistor is cut off, the cut-off path is equivalent to a capacitor, and the switch is opened.
Single pole, multiple throw switching circuits are typically made up of a plurality of single pole, single throw units. In a single pole single throw unit, the most widely used is a serial-parallel structure; the single-pole single-throw unit consists of a field effect transistor connected in series and a field effect transistor connected in parallel to the ground, and the control level of the grid electrodes of the single-pole single-throw unit and the field effect transistor are opposite. When the field effect transistor connected in series is turned on and the field effect transistor connected in parallel to the ground is turned off, the single-pole single-throw unit is turned on; when the field effect transistor connected in series is cut off and the field effect transistor connected in parallel to the ground is turned on, the single-pole single-throw unit is turned off, and at the moment, the field effect transistor connected in parallel to the ground can reduce signal leakage and improve isolation between the single-pole single-throw units.
With the continuous development of communication technology, the functions of a radio frequency front-end circuit are more and more complex, the application of a multiple input multiple output technology is more and more increased, and the performance and bandwidth requirements on a single-pole multiple-throw switch are higher and higher. However, since the transistor is not an ideal switch, parasitic effects and resistances exist, and thus when the number of throws is large and the frequency is high, a signal leaks from the parasitic capacitance of the off-branch transistor, resulting in deterioration of the insertion loss and isolation of the switch.
Therefore, how to reduce signal leakage of the multi-throw switch at high frequency and realize ultra-wide operating frequency band is an important research point.
Disclosure of Invention
Aiming at the problems existing in the background technology, the invention aims to provide an ultra-wideband single-pole multi-throw radio frequency switch applying a reconfigurable filter network. The switch provides a brand new structure, so that different branches of the switch respectively work in a low-pass frequency band and a high-pass frequency band, and each branch can realize very low insertion loss in the frequency band. .
In order to achieve the above purpose, the technical scheme of the invention is as follows:
an ultra-wideband single pole multi-throw radio frequency switch applying a reconfigurable filter network comprises a plurality of single pole single throw switch (SPST) units and the reconfigurable filter network, wherein the reconfigurable filter network comprises a switch transistor S T An inductance L and a capacitance C;
the common port of the switch is connected with one end of the inductor L and one end of the capacitor C; the other end of the inductor L and the transistor S T The drain electrodes of the single-pole single-throw units are connected in parallel; transistor S T The source electrode of the transistor is grounded, and the grid electrode is connected with the control voltage; the other end of the capacitor C is connected with a plurality of single-pole single-throw units which are connected in parallel; the other ends of all the single-pole single-throw units are output ports of the single-pole multi-throw switch;
the common port of the switch is connected with two branches in parallel, the branch where the inductor L is located is a low-pass branch, and the branch where the capacitor C is located is a high-pass branch.
Further, the methodWhen switching transistor S T Any single-pole single-throw unit connected in parallel with the drain electrode of the transistor S is turned on T When all the other single-pole single-throw units are disconnected, the low-pass branch circuit works, and the switch transistor S T The parasitic capacitance, the capacitance C and the inductance L form a low-pass filter network; any single-pole single-throw unit and switch transistor S connected in parallel when one end of capacitor T When all the other single-pole single-throw units are disconnected, the high-pass branch circuit works, and the capacitor C and the inductor L form a high-pass filter network.
Further, a switching transistor S T The switching transistor should be selected to be large in size to obtain a large parasitic capacitance, so that the parasitic capacitance in its off-state becomes part of the filter network.
Further, the capacitance of the capacitor C and the inductance of the inductor L are divided into a range by the frequency band of the switch and a switch transistor S T Is determined comprehensively.
Further, the single-pole single-throw unit is of a series-parallel structure consisting of two transistors; the drain electrode of the first transistor is an input port of the single-pole single-throw switch unit, the source electrodes of the first transistor and the second transistor are respectively connected with the drain electrode of the second transistor, the drain electrode of the first transistor is an output port of the single-pole single-throw switch unit, and the grid electrode of the first transistor is connected with a first control level; the source electrode of the second transistor is grounded, and the grid electrode of the second transistor is connected with a second control level; the first control level is opposite to the second control level to ensure that the two transistors are turned on and off, respectively.
In summary, due to the adoption of the technical scheme, the beneficial effects of the invention are as follows:
1. the scheme of the invention is based on the thought of designing the ultra-wideband switch by frequency division, the working frequency band of two branches of the single-pole multi-throw switch is divided into a low-pass section and a high-pass section, and meanwhile, a filter network is introduced into the branches of the single-pole multi-throw switch, so that the insertion loss of each branch in the working frequency band is superior to that of the traditional single-pole multi-throw switch, and the working frequency band is expanded by two times. The traditional single-pole multi-throw switch can realize the insertion loss smaller than 1dB only in DC-9GHz, and the invention extends to DC-18GHz.
2. The reconfigurable filter network is designed jointly by an inductor, a capacitor and a switching transistor and combining the parasitic capacitance of the single-pole single-throw unit. The switch transistor skillfully introduces the parasitic capacitance of the switch transistor and the parasitic capacitance of the single-pole single-throw unit into the filter network, so that the influence of the parasitic capacitance of the branches of different frequency bands on the branch of the working frequency band is reduced. The single-pole multi-throw switch has insertion loss less than 1dB and return loss higher than 15dB in the DC-18GHz full-band working frequency band.
Drawings
Fig. 1 is a schematic structural diagram of a conventional serial-parallel type single pole multi-throw switch.
Fig. 2 is a schematic structural diagram of a single pole, multi-throw switch of the present invention.
Fig. 3 is a schematic diagram of the principle of operation and equivalent circuit of the single pole, multi-throw switching circuit of the present invention.
Wherein, (a) is a low-pass working path and an equivalent circuit diagram thereof, and (b) is a high-pass working path and an equivalent circuit diagram thereof.
Fig. 4 is a circuit configuration diagram of a single pole double throw switch according to embodiment 1 of the present invention.
Fig. 5 is a circuit configuration diagram of the single pole double throw switch of comparative example 1.
Fig. 6 is a schematic diagram of the operation and equivalent circuit of the single pole double throw switch of comparative example 1.
Wherein, (a) is a low-pass working path and an equivalent circuit diagram thereof, and (b) is a high-pass working path and an equivalent circuit diagram thereof.
Fig. 7 is a circuit configuration diagram of the single pole double throw switch of comparative example 2.
FIG. 8 is a graph comparing the performance of single pole double throw switches of example 1, comparative example 1 and comparative example 2 of the present invention;
wherein, (a) is insertion loss, and (b) is return loss.
Detailed Description
The present invention will be described in further detail with reference to the embodiments and the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present invention more apparent.
Fig. 1 is a schematic structural diagram of a conventional single-pole multi-throw switch, in which each branch is a serial-parallel single-pole single-throw unit, however, the current conventional single-pole multi-throw switch has a narrow working bandwidth and the off branch at a high frequency has an influence on the on branch, so that the insertion loss is increased, and the more branches are, the higher the frequency is, the more obvious the leakage is; these drawbacks have greatly limited the use of switches and the development of radio frequency integrated circuits.
In order to solve the problems, the invention provides an ultra-wideband single-pole multi-throw radio frequency switch applying a reconfigurable filter network, which not only can realize wideband operation, but also can reduce the mutual influence among branches of different frequency bands and realize low insertion loss; the structure diagram of the single pole multi-throw radio frequency switch of the invention is shown in figure 2, and comprises a plurality of single pole single throw switch (SPST) units and a reconfigurable filter network, wherein the reconfigurable filter network comprises a switch transistor S T An inductance L and a capacitance C;
the common port of the switch is connected with one end of the inductor L and one end of the capacitor C; the other end of the inductor L and the transistor S T The drain electrodes of the single-pole single-throw units are connected in parallel; transistor S T The source electrode of the transistor is grounded, and the grid electrode is connected with the control voltage VGH; the other end of the capacitor C is connected with a plurality of single-pole single-throw units which are connected in parallel; the other ends of all the single-pole single-throw units are output ports of the single-pole multi-throw switch;
the common port of the switch is connected with two branches in parallel, the branch where the inductor L is located is a low-pass branch, and the branch where the capacitor C is located is a high-pass branch.
Fig. 3 is a schematic diagram of the principle of operation and equivalent circuit of the single pole, multi-throw switch of the present invention. As shown in figure (a), when a single pole single throw unit S in the low pass branch Ln On, all other single pole single throw units are off and transistor S T When cut-off, the low-pass branch works, the inductance L, the capacitance C and the total parasitic capacitance C of m transistors of the high-pass branch cut-off ef1 Switching transistor S T Parasitic capacitance C of (2) M1 Together forming a third order low pass filter network. When a single-pole single-throw unit S of a high-pass branch is used Hm On, all other single pole single throw units are off and transistor S T When the high-pass branch is conducted, the capacitor C and the inductor L jointly form a second-order high-pass filter network, and the transistor S T The low-pass branches connected with the rear end are all isolated, so that the influence of parasitic capacitance of the transistor of the low-pass branch on the conducted high-pass branch is reduced.
The filter network order is determined by the number of capacitances and inductances in the filter network. The higher the filter network order, the less the signal decays within the cut-off frequency and the faster the signal decays outside the cut-off frequency, the better the filter performance.
Example 1
A single pole double throw radio frequency switch applying a reconfigurable filter network, the circuit structure diagram of which is shown in figure 4, comprises two single pole single throw switch (SPST) units and a reconfigurable filter network;
switch tube S T The drain electrode of the switch tube S1 is connected with one end of the inductor L respectively T The source of (a) is connected to ground, and the gate is connected to the control signal VGH; the source electrode of the switching tube S1 is connected with the drain electrode of the switching tube S2 and is a low-pass port of a single-pole double-throw radio frequency switch, and the grid electrode of the switching tube S1 is connected with a control signal VGL; the source electrode of the switch tube S2 is connected to the ground, and the grid electrode is connected with a control signal VGH; the drain electrode of the switching tube S3 is connected with one end of the capacitor C, the source electrode of the switching tube S3 is connected with the drain electrode of the switching tube S4, and meanwhile, the switching tube S3 is a high-pass port of a single-pole double-throw radio frequency switch, and the grid electrode of the switching tube S3 is connected with a control signal VGH; the source electrode of the switch tube S4 is connected to the ground, and the grid electrode is connected with a control signal VGL; the public port is connected with two branches, one branch is connected with the other end of the inductor L, and the other branch is connected with the other end of the capacitor C;
the control signal VGH is opposite to VGL in level, when VGH is high level and VGL is low level, the high-pass branch circuit works; when VGH is low and VGL is high, the low-pass branch is operated.
Where inductance l=0.97 nH, capacitance c=9.2 pF.
The working bandwidth of the single-pole double-throw radio frequency switch of the embodiment is in the frequency range of DC-18GHz, wherein the low-pass frequency band is DC-9GHz, and the high-pass frequency band is 9-18GHz.
Comparative example 1
A non-reconfigurable single pole double throw RF switch has a circuit structure as shown in FIG. 5, and has a main structure similar to that of embodiment 1 except that the filter network does not contain a switching crystalTube S T The method comprises the steps of carrying out a first treatment on the surface of the The common end of the single-pole double-throw switch is respectively connected with one end of an inductor L and one end of a capacitor C, the other end of the inductor is connected with an SPST with a series-parallel structure, and the branch is a low-pass branch; the other end of the capacitor is connected with an SPST with a series-parallel structure, and the branch is a high-pass branch.
Fig. 6 is a schematic diagram of the principle of operation and equivalent circuit of the single pole double throw switch of the present comparative example. As shown in figure (a), when the single pole single throw unit of the low pass branch is turned on and the other SPST is turned off, the low pass branch is operated, and the inductor L, the capacitor C and the parasitic capacitor C of the high pass branch turn-off transistor are present ef2 Together form a second-order low-pass filter, and can realize the low-frequency signal passing. When the single-pole single-throw unit of the high-pass branch is conducted and the other SPST is turned off, the high-pass branch works, and the high-pass filter network consists of a capacitor C and a band-pass filter connected in parallel; wherein the band-pass filter is composed of an inductor L and a parasitic capacitor C when the low-pass branch is turned off ef3 Serial connection is formed; the band-pass filter may leak an intermediate frequency signal between a low frequency and a high frequency to ground, thereby increasing an insertion loss of the high-pass branch.
Comparative example 2
The circuit structure diagram of the conventional single pole double throw switch is shown in fig. 7. The public end of the single-pole double-throw switch is connected with two SPSTs in a serial-parallel structure, and the output ports of the two SPSTs are two output ends of the single-pole double-throw switch.
Fig. 8 is a graph showing the performance of the single pole double throw switch of example 1, comparative example 1 and comparative example 2 according to the present invention, wherein (a) is the insertion loss and (b) is the return loss. As can be seen from the graph (a), in the embodiment 1, in the full frequency band of DC-18GHz, the insertion loss is less than 1dB, and the return loss is higher than 15dB; comparative example 1 has insertion loss exceeding 1dB at spectrum overlap, and return loss full band higher than 10dB; comparative example 2 has an insertion loss of less than 1dB in the DC-9GHz band, a significant increase in insertion loss at 9-18GHz, and a return loss of less than 10dB when the frequency is higher than 12 GHz. Compared with comparative example 2, the invention reduces the signal leakage of the single-pole multi-throw switch at high frequency and reduces the insertion loss at high frequency, thereby expanding the working bandwidth by two times; compared to the design of the reconfigurable filter network of comparative example 1, the leakage of signals at the overlap of frequency bands is reduced.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.

Claims (4)

1. An ultra-wideband single-pole multi-throw radio frequency switch applying a reconfigurable filter network is characterized by comprising a plurality of single-pole single-throw switch units and the reconfigurable filter network;
the reconfigurable filter network comprises a switching transistor S T An inductance L and a capacitance C; the public port of the ultra-wideband single-pole multi-throw radio frequency switch is connected with one end of the inductor L and one end of the capacitor C; the other end of the inductor L and the transistor S T The drain electrodes of the single-pole single-throw units are connected in parallel; transistor S T The source electrode of the transistor is grounded, and the grid electrode is connected with the control voltage; the other end of the capacitor C is connected with a plurality of single-pole single-throw units which are connected in parallel; the other ends of all the single-pole single-throw units are output ports of the single-pole multi-throw switch;
the common port of the ultra-wideband single-pole multi-throw radio frequency switch is connected with two branches in parallel, the branch where the inductor L is located is a low-pass branch, and the branch where the capacitor C is located is a high-pass branch; when switching transistor S T Any single-pole single-throw unit connected in parallel with the drain electrode of the transistor S is turned on T When all the other single-pole single-throw units are disconnected, the low-pass branch circuit works, and the switch transistor S T The parasitic capacitance, the capacitance C and the inductance L form a low-pass filter network; any single-pole single-throw unit and switch transistor S connected in parallel when one end of capacitor T When all the other single-pole single-throw units are disconnected, the high-pass branch circuit works, and the capacitor C and the inductor L form a high-pass filter network; when a single pole single throw unit S in a low pass branch Ln On, all other single pole single throw units are off and transistor S T When cut-off, the low-pass branch works, the inductor L and the capacitor C and the high-pass branchTotal parasitic capacitance C of m transistors with off-state ef1 Switching transistor S T Parasitic capacitance C of (2) M1 Forming a third-order low-pass filter network together; when a single-pole single-throw unit S of a high-pass branch is used Hm On, all other single pole single throw units are off and transistor S T When the high-pass branch is conducted, the capacitor C and the inductor L jointly form a second-order high-pass filter network, and the transistor S T The low-pass branches connected with the rear end are all isolated, so that the influence of parasitic capacitance of the transistor of the low-pass branch on the conducted high-pass branch is reduced.
2. The ultra-wideband single pole multiple throw radio frequency switch of claim 1, wherein switching transistor S T The switching transistor should be selected to be large in size to obtain a large parasitic capacitance, so that the parasitic capacitance in its off-state becomes part of the filter network.
3. The ultra-wideband single pole multiple throw RF switch as claimed in claim 1, wherein the capacitance of the capacitor C and the inductance of the inductor L are divided by the frequency band of the switch and the switching transistor S T Is determined comprehensively.
4. The ultra-wideband single pole, multi-throw radio frequency switch of claim 1, wherein the single pole, single throw unit is a series-parallel structure comprised of two transistors; the drain electrode of the first transistor is an input port of the single-pole single-throw switch unit, the source electrodes of the first transistor and the second transistor are respectively connected with the drain electrode of the second transistor, the drain electrode of the first transistor is an output port of the single-pole single-throw switch unit, and the grid electrode of the first transistor is connected with a first control level; the source electrode of the second transistor is grounded, and the grid electrode of the second transistor is connected with a second control level; the first control level is opposite to the second control level to ensure that the two transistors are turned on and off, respectively.
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