CN115603702A - Reconfigurable transition Butterworth-elliptic filter based on transistor switch - Google Patents
Reconfigurable transition Butterworth-elliptic filter based on transistor switch Download PDFInfo
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- CN115603702A CN115603702A CN202211163701.8A CN202211163701A CN115603702A CN 115603702 A CN115603702 A CN 115603702A CN 202211163701 A CN202211163701 A CN 202211163701A CN 115603702 A CN115603702 A CN 115603702A
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
Abstract
The invention discloses a reconfigurable transition Butterworth-elliptic filter based on a transistor switch, which comprises: the transition Butterworth-elliptic filter comprises a plurality of capacitors and inductors, wherein the capacitors and the inductors are in step-shaped cross connection, the inductors are connected in series in a signal path, the capacitors are connected to the ground in parallel, and one capacitor is connected to two sides of the inductor at the tail of the circuit in parallel; the capacitors connected in parallel to the ground in the transition Butterworth-elliptic filter are respectively provided with n paths of first transistor switch-capacitor networks in parallel, and the capacitors connected in parallel to two sides of the inductor are provided with n paths of second transistor switch-capacitor networks in parallel. The invention adopts a circuit structure of a transition Butterworth-elliptic filter, frequency response has the characteristics of flatness in a pass band and quick roll-off in the transition band, and the values of the adopted inductance and the capacitance are relatively small, thereby saving the area of a chip.
Description
Technical Field
The invention relates to the field of electronic circuit design, in particular to a reconfigurable transition Butterworth-elliptic filter based on a transistor switch.
Background
The radio frequency front end is an indispensable component in a modern wireless communication system, and with the rapid development of the current wireless communication technology and the great increase of the wireless communication requirements, new requirements are generated on the functions of the radio frequency front end, and the design concept of the reconfigurable radio frequency front end is generated. The reconfigurable radio frequency front end refers to a radio frequency front end which can adjust configurable parameters of some radio frequency devices in the radio frequency front end according to use requirements and finally enables the radio frequency front end to display new technical indexes such as channel bandwidth, transmitting power and the like.
The realization of the reconfigurable radio frequency front end depends on the reconfigurable design of each radio frequency device which forms the reconfigurable radio frequency front end, wherein the filter occupies a key position in the reconfigurable radio frequency front end, and the reconfigurable design of the filter is necessary for ensuring that the radio frequency front end has a reconfigurable function in the aspect of channel frequency selection. The common method for realizing the reconfigurable filter is to adopt variable reactance elements in a filter circuit, such as a varactor, a PIN diode switch-capacitor network, an RF-MEMS switch-capacitor network, and the like, and adjust the frequency response of the filter by adjusting the values of the variable reactance elements in the filter circuit in the practical application process, so as to achieve the purpose of the reconfigurable filter.
The main problems of the technology adopting the variable capacitance diode as the variable reactance element are that loss and distortion are introduced into a circuit, and the adjustable order number is limited by the control signal used; the most major problem of the technology using PIN diode switch-capacitor network as variable reactance element is that loss and distortion are introduced into the circuit, and in addition, RF choke coil is required to realize the switching characteristic of PIN diode, resulting in larger chip area; a problem with the technology using RF-MEMS switch-capacitor networks as variable reactance elements is the slow switching speed.
Disclosure of Invention
The technical purpose is as follows: aiming at the defects in the prior art, the invention discloses a reconfigurable transition Butterworth-elliptic filter based on a transistor switch, wherein a switch-capacitor network is formed by a switch and a fixed capacitor, the adjustable order can be freely designed, and the relatively small chip area and the relatively high switching speed are realized.
The technical scheme is as follows: in order to achieve the technical purpose, the invention provides the following technical scheme.
A reconfigurable transition Butterworth-elliptic filter based on transistor switches comprises a transition Butterworth-elliptic filter structure, a plurality of first transistor switch-capacitor networks and a plurality of second transistor-capacitor networks; the transition Butterworth-elliptic filter comprises a plurality of capacitors and inductors, wherein the capacitors and the inductors are in step-shaped cross connection, the inductors are connected in series in a signal path, the capacitors are connected to the ground in parallel, and one capacitor is connected to two sides of the inductor at the tail of the circuit in parallel; the capacitors connected in parallel to the ground in the transition Butterworth-elliptic filter are respectively provided with n paths of first transistor switch-capacitor networks in parallel, and the capacitors connected in parallel to two sides of the inductor are provided with n paths of second transistor switch-capacitor networks in parallel. The first transistor switch-capacitor network and the second transistor switch-capacitor network are controlled by a decoder generating a digital control signal.
Preferably, the transition butterworth-elliptic filter circuit structure comprises a plurality of capacitors and inductors, and the order of the transition butterworth-elliptic filter circuit structure is equal to the total number of the capacitors and the inductors contained in the transition butterworth-elliptic filter circuit structure, and the higher the order is, the better the performance is.
Preferably, the first transistor switch-capacitor network includes a first inverter, a first transistor and a first capacitor, an input end of the first inverter is connected to the Yn signal, an output end of the first inverter is connected to a gate of the first transistor, a source of the first transistor is grounded, a drain of the first transistor is connected to one end of the first capacitor, and the other end of the first capacitor is used as an output end of the first transistor switch-capacitor network.
Preferably, the second transistor switch-capacitor network includes a second inverter, a second transistor, a second first capacitor, a second capacitor, a second first resistor, and a second resistor, an input end of the second inverter is connected to the Yn signal, an output end of the second inverter is connected to a gate of the second transistor, an input end of the second inverter is connected to a source of the second transistor through the second first resistor, an input end of the second inverter is connected to a drain of the second transistor through the second resistor, a source of the second transistor is connected to one end of the second capacitor, another end of the second capacitor is used as an input end of the second transistor switch-capacitor network, a drain of the second transistor is connected to one end of the second first capacitor, and another end of the second capacitor is used as an output end of the second transistor switch-capacitor network.
Preferably, in the first transistor switch-capacitor network and the second transistor switch-capacitor network, the transistors are MOSFET field effect transistors.
Preferably, the n first transistor switch-capacitor networks and the n second transistor switch-capacitor networks are controlled with the same digital signal. The digital signal is generated by the decoder and controls the first transistor switch-capacitor network and the second transistor switch-capacitor network. Finally, the n +1 frequency responses of the reconfigurable transition Butterworth-elliptic filter based on the transistor switch are controlled through the decoder.
Has the beneficial effects that: the invention adopts the circuit structure of the transition Butterworth-elliptic filter, simultaneously realizes the frequency response characteristics of flatness in a pass band and quick roll-off in the transition band, realizes relatively small chip area by reducing the adopted inductance and capacitance under the same frequency, simultaneously adopts an electronic device with the switching characteristic as a switch to form a switch-capacitor network with a fixed capacitor, realizes reconfigurable frequency response, can freely design the reconfigurable order, and realizes relatively small chip area and relatively quick switching speed.
Drawings
FIG. 1 is a circuit configuration of an N-order transition Butterworth-elliptic filter of the present invention;
FIG. 2 is a circuit diagram of a first transistor switch-capacitor network according to the present invention;
FIG. 3 is a circuit diagram of a second transistor switch-capacitor network according to the present invention;
FIG. 4 is a schematic diagram of the final overall circuit configuration when a 5-step transition Butterworth-elliptic filter structure is adopted in the embodiment;
fig. 5 is a schematic diagram of the structure of the 5 th-order transition butterworth-elliptic filter of fig. 4.
Fig. 6 is a comparison of the frequency response achieved by the design of fig. 4 for a 3dB bandwidth 3GHz low pass filter when a 5-step transition butterworth-elliptic filter structure is employed, and the frequency response achieved by a conventional butterworth filter.
Detailed Description
In order to further explain the technical scheme disclosed by the invention, the following detailed description is combined with the drawings and the embodiment of the specification. Those skilled in the art will recognize that the preferred and improved embodiments of the present invention are possible without departing from the spirit of the present invention, and those skilled in the art will not be described or illustrated in detail in the present embodiment.
As shown in fig. 1-3, a reconfigurable transition butterworth-elliptic filter based on transistor switches comprises a transition butterworth-elliptic filter circuit structure, a plurality of first transistor switch-capacitor networks and a plurality of second transistor-capacitor networks; the transition Butterworth-elliptic filter comprises a plurality of capacitors and inductors, wherein the capacitors and the inductors are in step-shaped cross connection, the inductors are connected in series in a signal path, the capacitors are connected to the ground in parallel, and one capacitor is connected to two sides of the inductor at the tail of the circuit in parallel; the capacitors connected in parallel to the ground in the transition Butterworth-elliptic filter are respectively provided with n (n is an integer, n is more than or equal to 1) first transistor switch-capacitor networks in parallel, and the capacitors connected in parallel to two sides of the inductor are provided with n (n is an integer, n is more than or equal to 1) second transistor switch-capacitor networks in parallel; the first transistor switch-capacitor network and the second transistor switch-capacitor network are controlled by a digital control signal Yn generated by a decoder.
The transition Butterworth-ellipse filter circuit structure comprises a plurality of capacitors and inductors, the order of the transition Butterworth-ellipse filter circuit structure is equal to the total number of the capacitors and the inductors, and the higher the order is, the better the performance is. The frequency response of the high-speed frequency converter has the characteristics of flatness in a pass band and quick roll-off in a transition band.
As shown in fig. 2, the first transistor switch-capacitor network includes a first inverter, a first transistor, and a first capacitor, an input terminal of the first inverter is connected to the Yn signal, an output terminal of the first inverter is connected to a gate of the first transistor, a source of the first transistor is grounded, a drain of the first transistor is connected to one end of the first capacitor, and another end of the first capacitor is used as an output terminal of the first transistor switch-capacitor network.
As shown in fig. 3, the second transistor switch-capacitor network includes a second inverter, a second transistor, a second first capacitor, a second capacitor, a second first resistor, and a second resistor, an input terminal of the second inverter is connected to a Yn signal, an output terminal of the second inverter is connected to a gate of the second transistor, an input terminal of the second inverter is connected to a source of the second transistor through the second resistor, an input terminal of the second inverter is connected to a drain of the second transistor through the second resistor, a source of the second transistor is connected to one end of the second capacitor, another end of the second capacitor is used as an input terminal of the second transistor switch-capacitor network, a drain of the second transistor is connected to one end of the second first capacitor, and another end of the second capacitor is used as an output terminal of the second transistor switch-capacitor network.
The invention adopts the circuit structure of the transition Butterworth-elliptic filter, simultaneously realizes the frequency response characteristics of flatness in a pass band and rapid roll-off in the transition band, realizes relatively small chip area by reducing the adopted inductance and capacitance under the same frequency, simultaneously adopts an electronic device with the switching characteristic as a switch to form a switch-capacitor network with a fixed capacitor, realizes reconfigurable frequency response, the reconfigurable order can be freely designed, and relatively small chip area and relatively rapid switching speed are realized.
Example (b):
in the embodiment, a 5-order transition Butterworth-elliptic filter is provided, and a first transistor switch-capacitor network and a second transistor-capacitor network are introduced on the basis of the 5-order transition Butterworth-elliptic filter to form a reconfigurable transition Butterworth-elliptic filter based on a transistor switch.
As shown in fig. 4, a reconfigurable transition butterworth-elliptic filter based on transistor switches comprises a 5-order transition butterworth-elliptic filter structure, a plurality of first transistor switch-capacitor networks and a plurality of second transistor-capacitor networks; the 5-order transition Butterworth-elliptic filter structure comprises a capacitor C2, a capacitor C4, a capacitor C5, an inductor L1 and an inductor L3One end of an inductor L1 serves as an input end of the filter, the other end of the inductor L1 is connected with one end of a capacitor C2, one end of a capacitor C5 and one end of an inductor L3 respectively, the other end of the capacitor C2 is grounded, the other end of the capacitor C5 and the other end of the inductor L3 are grounded through a capacitor C4 after being in short circuit, and the other end of the capacitor C5 and the other end of the inductor L3 are in short circuit and serve as an output end of the filter; and the capacitors C2 and C4 in the 5-order transition Butterworth-elliptic filter structure are respectively provided with n paths of first transistor switch-capacitor networks in parallel, and the capacitor C5 is provided with n paths of second transistor switch-capacitor networks in parallel. The first transistor switch-capacitor network and the second transistor switch-capacitor network are controlled by a decoder generating a digital control signal Yn signal. The order of the transition Butterworth-elliptic filter circuit is equal to the total number of the capacitors and the inductors contained in the transition Butterworth-elliptic filter circuit, and the higher the order is, the better the performance is, as shown in FIG. 5, the 5-order transition Butterworth-elliptic filter circuit structure comprises a capacitor C2, a capacitor C4, a capacitor C5, an inductor L1 and an inductor L3. Normalized element values of the capacitor C2, the capacitor C4, the capacitor C5, the inductor L1 and the inductor L3 under different design requirements are given by a table 1, a table 2 and a table 3, normalized element values of the transition Butterworth-elliptic filter under different stop band rejection conditions and different orders are given by the table 1, the table 2 and the table 3, the sequence listed by the normalized element values in the table is the same as the connection sequence of the inductor and the capacitor in the circuit, wherein the first normalized element value is the normalized value of the inductor, the last normalized element value is the normalized value of the capacitor connected in parallel on two sides of the inductor, the actual value of each element in the transition Butterworth-elliptic filter can be calculated according to the normalized element values given by the table 1, the table 2 and the table 3 and the inverse normalized formulas given by the formula 1 and the formula 2, wherein omega is calculated according to the normalized element values given by the table 1, the table 2 and the table 3 and the inverse normalized formulas given by the formula 1 and the formula 2 p Represents the 3dB bandwidth of the transition butterworth-elliptic filter, and R represents the characteristic impedance of the transition butterworth-elliptic filter. L is k 、C k 、b k Respectively representing the actual inductance value of the inductor used in the transition Butterworth-elliptic filter, the actual capacitance value of the capacitor used in the transition Butterworth-elliptic filter and the normalized element value, and the formula is as follows:
the specific values of the elements applied in the filter structure at different bandwidths can be denormalised according to equations 1 and 2. As shown in table 1, table 2 and table 3, the normalized parameters of each element in the transition butterworth-elliptic filter structure are given under 3 different design requirements, and as the out-of-band rejection is reduced, the values of each element in the transition butterworth-elliptic filter are reduced, so as to achieve the required chip area reduction, and meanwhile, the transition butterworth-elliptic filter has steeper roll-off in the transition band, and the suitable normalized parameters should be selected for design according to the specific design requirements in the actual design process. Table 1 is the normalized component values for the transition butterworth-elliptic filter of the present invention with out-of-band rejection greater than 20 dB; table 2 is the normalized component values for the transition butterworth-elliptic filter of the present invention with out-of-band rejection greater than 30 dB; table 3 is the normalized element values for the transition butterworth-elliptic filter of the present invention with out-of-band rejection greater than 40 dB. The normalized element values of the 4 th to 9 th order transition Butterworth-elliptic filters are given in tables 1-3, which represent the normalized values of the elements of the 4 th, 5 th, 6 th, 7 th, 8 th and 9 th order transition Butterworth-elliptic filters, respectively, from top to bottom; the third row is the normalized component value used by the 5 th-order transition butterworth-elliptic filter in this embodiment, and the actual inductance value of the corresponding inductor and the actual capacitance value of the capacitor used by the 5 th-order transition butterworth-elliptic filter can be calculated by combining equations 1 and 2.
TABLE 1
TABLE 2
TABLE 3
Taking a low-pass filter design index with a 3dB bandwidth of 3GHz as an example, the 5-step transition butterworth-elliptic filter structure and the conventional butterworth filter structure with epsilon =1 are applied for design, the used component values are shown in table 4, and table 4 is a comparison between the component values used for designing the low-pass filter with the 3dB bandwidth of 3GHz when the 5-step transition butterworth-elliptic filter structure is adopted in the present invention and the component values used by the conventional butterworth filter. The achieved filter performance is shown in fig. 6.
TABLE 4
As shown in Table 4, ε reflects the decay rate of a conventional Butterworth filter, with larger values attenuating more rapidly. The transition butterworth-elliptic filter uses smaller component values than the conventional butterworth filter of e =1, thereby reducing the chip area required for implementation, especially by 29.28% compared to the conventional butterworth filter of e =1 at an out-of-band rejection of 20 dB. As shown in fig. 6, the frequency response of the transition butterworth-elliptic filter in the pass band is similar to that of a conventional butterworth filter (butterworth) and is flat, but the butterworth-elliptic filter has a steeper roll-off in the transition band, which is similar to the frequency response of the elliptic filter.
In the first transistor switch-capacitor network and the second transistor switch-capacitor network of the invention, the transistors are implemented by electronic devices with switching characteristics, such as MOSFET; in addition, the n first transistor switch-capacitor network and the n second transistor switch-capacitor network are controlled by the same digital signal, namely the Yn signal is the same digital signal in the first transistor switch-capacitor network and the second transistor switch-capacitor network, and the decoder is designed to reduce the number of control signals from n to m = log 2 n, thereby making reconfigurable control more concise; according to the invention, yn signals are controlled, an electronic device with a switching characteristic, such as a MOSFET (metal oxide semiconductor field effect transistor) is used as a switch to form a switch-capacitor network with a fixed capacitor, the adjustable order can be freely designed, and the relatively small chip area and the relatively fast switching speed are realized.
The filter structure adopts a transition Butterworth-elliptic filter structure, so that the values of used inductors and capacitors can be reduced, and the area of a chip is further reduced; the filter of the invention can finally realize frequency response of flat in a pass band and quick roll-off in a transition band, and adopts a transistor switch-capacitor network to replace a fixed capacitor in an original filter circuit to realize reconfigurable design, as shown in figure 4, each network consists of one path of fixed capacitor and n paths of switch-capacitors, and the network can present n +1 capacitance values by controlling the on-off of the switches, so that the designed filter has n +1 reconfigurable frequency response. In the invention, n +1 capacitance values correspond to the adjustable order of n +1 of the filter, each Yn signal controls the on and off of each switch-capacitor path, and the n switch-capacitor paths are respectively controlled by Y1 and Y2 … … Yn, wherein each signal is 0,1 digital signal.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (6)
1. A reconfigurable transition butterworth-elliptic filter based on transistor switches, characterized by: the circuit comprises a transition Butterworth-elliptic filter circuit structure, a plurality of first transistor switch-capacitor networks and a plurality of second transistor-capacitor networks; the transition Butterworth-elliptic filter comprises a plurality of capacitors and inductors, wherein the capacitors and the inductors are in step-shaped cross connection, the inductors are connected in series in a signal path, the capacitors are connected to the ground in parallel, and one capacitor is connected to two sides of the inductor at the tail of the circuit in parallel; the capacitors connected to the ground in parallel in the transition Butterworth-elliptic filter are respectively provided with n paths of first transistor switch-capacitor networks in parallel, and the capacitors connected to the two sides of the inductor in parallel are provided with n paths of second transistor switch-capacitor networks in parallel; the first transistor switch-capacitor network and the second transistor switch-capacitor network are controlled by a decoder generating a digital control signal Yn signal.
2. A transistor switch based reconfigurable transition butterworth-elliptic filter as claimed in claim 1 wherein: the transition butterworth-elliptic filter circuit structure comprises a plurality of capacitors and inductors, and the order of the transition butterworth-elliptic filter circuit structure is equal to the total number of the capacitors and the inductors contained in the transition butterworth-elliptic filter circuit structure.
3. A transistor switch based reconfigurable transition butterworth-elliptic filter as claimed in claim 1 wherein: the first transistor switch-capacitor network comprises a first phase inverter, a first transistor and a first capacitor, wherein the input end of the first phase inverter is connected with a Yn signal, the output end of the first phase inverter is connected with the grid electrode of the first transistor, the source electrode of the first transistor is grounded, the drain electrode of the first transistor is connected with one end of the first capacitor, and the other end of the first capacitor is used as the output end of the first transistor switch-capacitor network.
4. A transistor switch based reconfigurable transitional butterworth-elliptic filter of claim 1 wherein: the second transistor switch-capacitor network comprises a second inverter, a second transistor, a second first capacitor, a second first resistor and a second resistor, wherein the input end of the second inverter is connected with a Yn signal, the output end of the second inverter is connected with the grid electrode of the second transistor, the input end of the second inverter is connected with the source electrode of the second transistor through the second resistor, the input end of the second inverter is connected with the drain electrode of the second transistor through the second resistor, the source electrode of the second transistor is connected with one end of the second capacitor, the other end of the second capacitor is used as the input end of the second transistor switch-capacitor network, the drain electrode of the second transistor is connected with one end of the second first capacitor, and the other end of the second capacitor is used as the output end of the second transistor switch-capacitor network.
5. A transistor switch based reconfigurable transitional butterworth-elliptic filter of claim 1 wherein: in the first transistor switch-capacitor network and the second transistor switch-capacitor network, the transistors adopt MOSFET field effect transistors.
6. A transistor switch based reconfigurable transition butterworth-elliptic filter as claimed in claim 1 wherein: and controlling the n first transistor switch-capacitor networks and the n second transistor switch-capacitor networks by using the same digital signal. The digital signal is generated by the decoder and controls the first transistor switch-capacitor network and the second transistor switch-capacitor network. Finally, the n +1 frequency responses of the reconfigurable transition Butterworth-elliptic filter based on the transistor switch are controlled through the decoder.
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| CN202211163701.8A CN115603702A (en) | 2022-09-21 | 2022-09-21 | Reconfigurable transition Butterworth-elliptic filter based on transistor switch |
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| CN202211163701.8A CN115603702A (en) | 2022-09-21 | 2022-09-21 | Reconfigurable transition Butterworth-elliptic filter based on transistor switch |
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