CN114823948A - Adjustable electricity-saving bias suspension type graphene field effect transistor - Google Patents

Adjustable electricity-saving bias suspension type graphene field effect transistor Download PDF

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CN114823948A
CN114823948A CN202210366203.7A CN202210366203A CN114823948A CN 114823948 A CN114823948 A CN 114823948A CN 202210366203 A CN202210366203 A CN 202210366203A CN 114823948 A CN114823948 A CN 114823948A
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graphene
substrate
sio
channel
electrode
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单丹
曹蕴清
唐明军
杨瑞洪
陈雪圣
孙道源
王梦龙
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Yangzhou Polytechnic Institute
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Abstract

The invention discloses an adjustable power-saving bias suspended graphene field effect transistor in the technical field of communication, which comprises a grid and SiO 2 The graphene transistor comprises a substrate, a single-layer graphene, a source electrode and a drain electrode; SiO2 2 Four gold electrodes are arranged on four corners of the surface of the substrate and respectively used as a source electrode and a drain electrode of a pair of devices, a pair of gates are arranged, and SiO is arranged 2 The middle part of the surface of the substrate is provided with a plurality of trapezoidal channels, two single-layer graphene layers are arranged, and one single-layer graphene layer is arranged on SiO 2 A suspension arc surface structure is formed on the surface of the substrate and at the position of the wide channel, and ohmic connection is formed between the two sides of the suspension arc surface structure and the gold electrode; another single layer graphene is disposed on SiO 2 A suspension arc surface structure is formed on the surface of the substrate and at the position of the narrow channel, and ohmic connection is formed between the two sides of the suspension arc surface structure and the gold electrodeThe invention improves the radiation efficiency so that the field effect tube can generate terahertz radiation signals and adjusts the signal radiation frequency by adjusting the channel width.

Description

Adjustable electricity-saving bias suspension type graphene field effect transistor
Technical Field
The invention relates to the technical field of information communication, in particular to a graphene field effect transistor.
Background
Terahertz (THz) waves refer to electromagnetic waves with frequencies ranging from 0.1THz to 10 THz, and have wide application prospects in the fields of terahertz imaging, terahertz radar, medical diagnosis, substance detection, 6G wireless communication and the like. In the development process of the terahertz technology, the shortage of related functional devices applied in the terahertz waveband is one of the main factors for restricting the further development of the terahertz technology. Therefore, searching and developing high-performance materials and related devices operating in the terahertz waveband are problems that are pursued and urgently need to be solved by researchers in the field of terahertz technology at present.
The graphene material is a new material with a single-layer two-dimensional honeycomb lattice structure formed by tightly accumulating carbon atoms, is obtained by first mechanical stripping in 2004, and has wide application due to the special energy band structure, wide spectral response range, extremely high carrier mobility, adjustable Fermi level and other specific physical properties. Due to the special properties of high mobility and high thermal conductivity, the graphene is very easy to generate hot electrons even under the action of a tiny bias electric field, and the graphene presents a heat radiation form similar to black body radiation under the action of a direct current bias electric field and radiates energy to the outside. At present, the graphene and the device thereof have rich research reports and wide application prospects in radiation of Far-Infrared (Far-Infrared), Near-Infrared (Near-Infrared) and Visible Light (Visible Light) wave bands, but the radiation phenomenon of electrically biased graphene in terahertz wave bands with lower frequencies is rarely reported. The reason is that the frequency and efficiency of electrically biased graphene radiation are not only influenced by parameters such as spatial distribution, temperature and concentration of thermoelectrons in graphene, but also an electrical transport mechanism (scattering mechanism) of carriers in graphene and a coupling effect between electrons and optical phonons can act on a radiation mechanism, and the complex factors cause the low radiation efficiency of graphene in a terahertz waveband, particularly a terahertz low-frequency waveband.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides an adjustable electricity-saving bias suspension type graphene field effect transistor, which solves the problems of spatial distribution, temperature unevenness and concentration unevenness of hot electrons in graphene, improves the radiation efficiency, enables the field effect transistor to generate terahertz radiation signals under the action of a direct-current bias electric field, and adjusts the signal radiation frequency by adjusting the channel width.
The purpose of the invention is realized as follows: an adjustable power-saving suspended graphene field effect transistor comprises a grid and SiO 2 The graphene transistor comprises a substrate, a single-layer graphene, a source electrode and a drain electrode;
the SiO 2 Four gold electrodes are arranged on four corners of the surface of the substrate and respectively used as a source electrode and a drain electrode of a pair of devices, and a pair of grid electrodes are arranged and respectively arranged on SiO 2 Under a substrate, the SiO 2 The middle part of the surface of the substrate is provided with a plurality of trapezoidal channels, the number of the single-layer graphene is two, and one single-layer graphene is arranged on SiO 2 A suspension arc surface structure is formed on the surface of the substrate and at the position of the wide channel, and ohmic connection is formed between the two sides of the suspension arc surface structure and the gold electrode; another single layer graphene is disposed on SiO 2 A suspension arc-shaped surface structure is formed on the surface of the substrate and at the position of the narrow channel, and ohmic connection is formed between the two sides of the suspension arc-shaped surface structure and the gold electrode.
As a further limitation of the present invention, a single layer of graphene is further disposed in the middle of the trapezoidal channel, and a gate, a source, and a gate are disposed at corresponding positions.
As a further limitation of the present invention, the channel width disposed under the single-layer graphene is 100 ± 5nm and the depth is 200 nm.
As a further limitation of the invention, the wide channel position has a width of 150 + -5 nm and a depth of 200 nm.
As a further limitation of the invention, the narrow channel location has a width of 50 + -5 nm and a depth of 200 nm.
As a further limitation of the invention, the gold electrode is grown on the front surface of the SiO2 substrate by a magnetron sputtering method, and the thickness is 100 +/-10 nm.
As a further limitation of the invention, the thickness of the single layer graphene is 5 ± 1 nm.
According to the invention, the graphene is suspended on the substrate by etching the channel on the substrate, so that the graphene above the channel is in a suspended arc state;
firstly, due to the fact that the graphene is not in contact with the substrate, energy radiated by the graphene can be prevented from being conducted into the substrate, the temperature of hot electrons in the graphene can be effectively increased, the problem that the temperature of the existing hot electrons is uneven in distribution is solved, radiation efficiency is improved, and an efficiency basis is provided for radiating terahertz waves;
secondly, because the plane of the graphene layer is in a suspended arc state, the surface of the graphene layer has different surface curvatures at each position, and localized distribution of thermal electrons is facilitated under the action of electric bias to form corresponding hot spots, so that the problem of uneven distribution of the concentration of the existing thermal electrons is solved, the radiation efficiency is further improved, and the efficiency basis is further enhanced;
thirdly, due to the designed channel structure, the graphene layer can utilize the graphene radiation light and the reflected light from the channel to form an interference effect, so that the radiation efficiency is improved;
fourthly, due to the designed trapezoidal channel structure, the purpose that the frequency of graphene terahertz radiation is regulated and controlled by adjusting different channel widths is achieved, and finally the suspended graphene prototype device with radiation within the range of 340 GHz-1 THz is obtained.
Compared with the prior art, the invention has the beneficial effects that:
according to the terahertz wave detection device, the trapezoidal channel is designed, terahertz wave radiation is directly detected on the graphene under the action of voltage bias, a practical basis is provided for an electric bias graphene terahertz commercial device, and terahertz waves can be generated; meanwhile, the frequency is adjusted through the gradual change characteristic of the width of the trapezoid structure, and the foundation is improved for later application.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic top view of the present invention.
FIG. 2 is a cross-sectional view of the wide channel of the present invention.
FIG. 3 is a cross-sectional view of the present invention at the channel.
FIG. 4 is a cross-sectional view of the narrow channel of the present invention.
FIG. 5 is a schematic view of a testing platform for testing terahertz radiation according to the present invention.
FIG. 6 is a schematic diagram of a circuit for testing terahertz radiation according to the present invention.
FIG. 7 is an operation characteristic curve of a 340GHz terahertz detector.
FIG. 8 is a signal current in a 340GHz terahertz detector.
FIG. 9 is an operation characteristic curve of a 600GHz terahertz detector.
FIG. 10 is a signal current in a 600GHz terahertz detector.
FIG. 11 is an operation characteristic curve of a 900GHz terahertz detector.
FIG. 12 is a signal current in a 900GHz terahertz detector.
Wherein, 1 grid electrode, 2SiO 2 The device comprises a substrate, 3 single-layer graphene, 4 gold electrodes and 5 channels.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in FIG. 1, an adjustable electrically-biased suspended graphene FET comprises a gate and SiO 2 The graphene transistor comprises a substrate, a single-layer graphene, a source electrode and a drain electrode;
SiO 2 six gold electrodes are arranged on four corners of the surface of the substrate, the gold electrodes grow on the front surface of the SiO2 substrate by a magnetron sputtering method, the thickness of the gold electrodes is 100 +/-10 nm, the six gold electrodes are respectively used as source electrodes and drain electrodes of three devices, three grid electrodes are arranged and are respectively arranged on the SiO2 substrate 2 Corresponding to the source and drain positions, SiO 2 The middle part of the surface of the substrate is provided with a plurality of trapezoidal channels, three single-layer graphene layers are arranged, and the thickness of the single-layer graphene layers is 5 +/-1 nm;
as shown in fig. 2, one single layer of graphene is disposed on SiO 2 A suspension arc-shaped surface structure is formed on the surface of the substrate at the position of the wide channel, ohmic connection is formed between the two sides of the suspension arc-shaped surface structure and the gold electrode, the width of the wide channel is 150 +/-5 nm, and the depth of the wide channel is 200 nm;
as shown in FIG. 3, another single layer of graphene is disposed on SiO 2 A suspension arc-shaped surface structure is formed on the surface of the substrate and at the middle channel position, ohmic connection is formed between the two sides of the suspension arc-shaped surface structure and the gold electrode, the width of the middle channel position is 100 +/-5 nm, and the depth of the middle channel position is 200 nm;
as shown in FIG. 4, the last single layer graphene is disposed on SiO 2 A suspension arc-shaped surface structure is formed on the surface of the substrate at the position of the narrow channel, ohmic connection is formed between the two sides of the suspension arc-shaped surface structure and the gold electrode, the width of the narrow channel is 50 +/-5 nm, and the depth of the narrow channel is 200 nm.
The field effect transistor is tested, and three antenna coupling gallium nitride/aluminum gallium nitride high electron mobility transistor chips (GaN/AlGaNhigh-electron-mobility transistor) are selected as detectors and respectively correspond to 340GHz, 600GHz and 900 GHz; the turn-on Voltage (VT) of the chip set at the low temperature of 4K is-3.48V, -3.18V and-3.08V respectively, and the noise equivalent power is 3 pW-
Figure RE-83732DEST_PATH_IMAGE001
Hz, decreased at 77K to 1pW
Figure RE-765600DEST_PATH_IMAGE001
Hz or less; by combining a Fourier transform spectrometer, the effective detection range of the chip group on the terahertz wave band can be expanded to 0.1 THz-2 THz.
By adopting the test platform shown in fig. 5, on the test support, the field effect tube sample and the terahertz detector are placed face to face, and the distance can be mechanically adjusted within 0.5 cm-3 cm. The test support is electrically connected with relevant test equipment through a low-temperature pipe and placed in an Oxford low-temperature test system for temperature change test, and the temperature range can be adjusted between 300K and 10K.
By adopting the test circuit shown in fig. 6, when a certain working voltage (gate voltage) of the terahertz detector is given, if terahertz radiation with corresponding frequency is generated from graphene and is collected to the terahertz detector through the silicon lens, extra photoinduction current is formed between the source and the drain of the terahertz detector, and the frequency and the intensity of the terahertz radiation can be obtained through the relationship between the magnitude of the photoinduction current and the gate voltage; the source meter equipment externally connected with the test platform is provided with a yokogawa voltage source meter for applying and scanning the gate voltage of the terahertz detector, a current-voltage conversion Amplifier for outputting a current signal, a keysight voltmeter for testing the voltage signal and a Lock-In Amplifier (Lock-In Amplifier) for testing an alternating current signal; the alternating current output of the lock-in amplifier is jointly acted on a grid electrode of the terahertz device through the direct current-alternating current adder, so that the first-order derivative of an output signal can be detected, and the precision of the signal is improved; in addition, the lock-in amplifier adopted by the test platform is the equipment with the best signal extraction capability so far, the dynamic reserve reaches 100 dB, and meanwhile, the test platform has the capability of multi-channel signal acquisition and multi-order signal processing.
Fig. 7 is a working characteristic curve of a 340GHz terahertz detector, and fig. 8 is a signal current in the detector when a field effect transistor with a channel width of 50 nm and a channel depth of 200nm is locally under the action of different bias currents, which illustrates that the larger the bias current in graphene is, the stronger the terahertz signal radiated near 340GHz is.
Fig. 9 is a working characteristic curve of a 600GHz terahertz detector, and fig. 10 is a signal current in the detector when a field effect transistor with a channel width of 100nm and a channel depth of 200nm is locally under the action of different bias currents, which illustrates that a terahertz signal radiated near 600GHz is stronger as the bias current in graphene is larger, and also illustrates that the radiation frequency of the terahertz radiation of graphene can be effectively adjusted as the channel width of graphene is changed, and the terahertz radiation frequency is transferred to a high-frequency band as the channel is widened.
Fig. 11 is a working characteristic curve of a 900GHz terahertz detector, and fig. 12 is a signal current in the detector under the action of different bias currents of a local field effect transistor with a channel width of graphene channel of 150 nm and a channel depth of 200nm, which illustrates that a terahertz signal radiated near 900GHz is stronger as the bias current in graphene is larger, and also illustrates that the radiation frequency of graphene terahertz radiation can be effectively adjusted as the width of the graphene channel changes, and the terahertz radiation frequency is transferred to a high-frequency band as the channel becomes wider.
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

Claims (7)

1. An adjustable power-saving bias suspended graphene field effect transistor is characterized by comprising a grid electrode and SiO 2 The graphene transistor comprises a substrate, a single-layer graphene, a source electrode and a drain electrode;
the SiO 2 Four gold electrodes are arranged on four corners of the surface of the substrate and respectively used as a source electrode and a drain electrode of a pair of devices, and a pair of grid electrodes are arranged and respectively arranged on SiO 2 Corresponding source electrode under substrateDrain electrode position, said SiO 2 The middle part of the surface of the substrate is provided with a plurality of trapezoidal channels, the number of the single-layer graphene is two, and one single-layer graphene is arranged on SiO 2 A suspension arc surface structure is formed on the surface of the substrate and at the position of the wide channel, and ohmic connection is formed between the two sides of the suspension arc surface structure and the gold electrode; another single layer graphene is disposed on SiO 2 A suspension arc-shaped surface structure is formed on the surface of the substrate and at the position of the narrow channel, and ohmic connection is formed between the two sides of the suspension arc-shaped surface structure and the gold electrode.
2. The adjustable electrically biased suspended graphene fet as claimed in claim 1, wherein a single layer of graphene is further disposed in the middle of the trapezoidal channel, and a gate, a source and a gate are disposed at corresponding positions.
3. The adjustable electrically biased suspended graphene fet as claimed in claim 2, wherein the channel disposed under the single layer graphene has a width of 100 ± 5nm and a depth of 200 nm.
4. The adjustable electrically biased suspended graphene field effect transistor according to any one of claims 1-3, wherein the wide channel position has a width of 150 ± 5nm and a depth of 200 nm.
5. The adjustable electrical bias suspended graphene fet as claimed in any one of claims 1-3, wherein the narrow channel position is 50 + 5nm wide and 200nm deep.
6. The adjustable electric bias suspended graphene field effect transistor according to any one of claims 1-3, wherein the gold electrode is grown on the front side of the SiO2 substrate by magnetron sputtering method with a thickness of 100 ± 10 nm.
7. The adjustable electrically-biased suspended graphene field-effect transistor according to any one of claims 1-3, wherein the thickness of the single-layer graphene is 5 ± 1 nm.
CN202210366203.7A 2022-04-08 2022-04-08 Adjustable electricity-saving bias suspension type graphene field effect transistor Withdrawn CN114823948A (en)

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WO2010065517A1 (en) * 2008-12-01 2010-06-10 The Trustees Of Columbia University In The City Of New York Electromechanical devices and methods for fabrication of the same
US8878120B2 (en) * 2010-12-13 2014-11-04 The Trustees Of The Stevens Institute Of Technology Active bandgap tuning of graphene for tunable photodetection applications
EP2602821B1 (en) * 2011-12-07 2014-02-12 Universität Augsburg Graphene-based nanodevices for terahertz electronics
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