CN108598258B - Terahertz device with static negative differential resistance characteristic - Google Patents
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Abstract
The invention relates to a terahertz device with static negative differential resistance characteristics, which comprises an insulating substrate layer, a two-dimensional semiconductor conducting layer, an insulating protective layer, an insulating groove penetrating through the two-dimensional semiconductor conducting layer, an input electrode and an output electrode, wherein the insulating groove is formed in the insulating substrate layer; the insulation groove comprises a first insulation groove and a second insulation groove, the first insulation groove and the second insulation groove are arranged at intervals, a nano channel is formed between the first insulation groove and the second insulation groove, and the two-dimensional semiconductor conducting layer except the nano channel is divided into a first low-resistance area and a second low-resistance area; the nano channel is parallel to the input electrode and the output electrode; the first low-resistance region and the second low-resistance region are respectively connected with the input electrode and the output electrode and are mutually conducted through the nano channel. The device can generate an obvious static negative differential resistance effect, and can realize broadband terahertz radiation based on the effect.
Description
Technical Field
The invention relates to the technical field of terahertz, in particular to a terahertz device with a static negative differential resistance characteristic.
Background
The gunn effect, also called transfer electron effect, means that in a semiconductor material having multiple energy valleys, electrons having sufficient energy obtained from the outside can jump from the high-mobility central energy valley of the conduction band to the low-mobility sub-energy valley, and when a large number of electrons in the semiconductor undergo similar movement, the electron mobility in the semiconductor will be reduced macroscopically, resulting in negative differential resistivity, which is called gunn effect. A gunn diode is a semiconductor device designed based on the gunn effect, and its principle is to utilize such a negative differential mobility characteristic to acquire a high frequency signal. Most of the current research is to utilize this negative differential resistance effect, through domain growth, maturation and death, and periodically repeat, to output periodic oscillation of current.
The working frequency of the Gunn diode can reach the terahertz range, and more than one hundred research organizations have conducted researches on related fields of terahertz internationally. The terahertz wave-related research is conducted by national foundation of the united states, national space agency, department of defense and national institutes of health, japan, australia, korea and china. Terahertz (THz) waves refer to electromagnetic waves with the frequency within the range of 0.1 THz-10 THz (the wavelength is 3000μm-30μm), the THz wave band is positioned between microwave millimeter waves and infrared radiation in the electromagnetic spectrum, and the THz wave band is coincided with millimeter waves (sub-millimeter waves) in the long wave band, and the THz waves mainly relate to the field of electronics; the THz technology also becomes a cross frontier science in the field of photonics, wherein the short wave band is overlapped with infrared light. The THz technology not only combines the features of electronics and photonics, but also relates to a plurality of subjects such as physics, chemistry, optics, material science, microelectronics, and integrated circuits. In the terahertz technology, a terahertz radiation source and a terahertz detector are main fields of development, and compared with a traditional radiation source, due to the essential property of the terahertz radiation source, the THz radiation source not only has the characteristic of strong penetration of infrared rays, but also has the anti-interference capability of a microwave band, and is a novel radiation source with unique advantages. In addition, because the terahertz spectrum contains abundant physical and chemical information, in the process of exploring a material structure, people research that the spectral significance of the material in the wave band is larger, and therefore people attract wide attention to the terahertz spectrum.
With the increasing demand of people for terahertz technology application, the gunn diode is gradually paid attention to as a terahertz source due to its excellent microwave radiation characteristics such as low power consumption, low noise, high power, high stability and the like, and is widely applied to radars, satellite detection and automatic collision avoidance systems. In the continuous research of people, the further development of the terahertz field is restricted by the traditional terahertz gunn device with a vertical structure due to the factors of complex structure, high cost, difficulty in integration and the like. The characteristics of simple structure, low cost, small noise interference and the like of the planar Gunn device increasingly highlight the strong advantages of the terahertz source, and the planar Gunn tube also shows wide application prospect in the aspects of miniaturization and integration of an integrated circuit.
Disclosure of Invention
Based on this, the present invention aims to provide a terahertz device with static negative differential resistance characteristics, which has the advantages of simple structure, easy integration and wide coverage frequency band.
The purpose of the invention is realized by the following technical scheme: a terahertz device with static negative differential resistance characteristics comprises an insulating substrate layer, a two-dimensional semiconductor conducting layer with negative differential mobility, an insulating protective layer, an insulating groove, an input electrode and an output electrode, wherein the two-dimensional semiconductor conducting layer is arranged above the insulating substrate layer; the insulation engraved grooves comprise a first insulation engraved groove close to one side of the input electrode and a second insulation engraved groove close to one side of the output electrode, the first insulation engraved groove and the second insulation engraved groove are arranged at intervals, a nano channel is formed between the first insulation engraved groove and the second insulation engraved groove, the two-dimensional semiconductor conducting layer is divided into a first low-resistance area and a second low-resistance area except the nano channel, and one end of the first insulation engraved groove is shorter than one end of the second insulation engraved groove on the same side; the nano channel is parallel to the input electrode and the output electrode; the first low-resistance region and the second low-resistance region are respectively connected with the input electrode and the output electrode and are mutually conducted through the nano channel.
Compared with the prior art, the nano channel of the device is parallel to the input electrode and the output electrode, so that the current in the device is deflected by 90 degrees when entering the nano channel and is deflected by 90 degrees when leaving the nano channel, most of the voltage in the device is also dropped on the nano channel, the mobility of electrons in the nano channel enters a negative differential area due to the action of a strong electric field, and meanwhile, under the action of a lateral field effect and current steering limitation, the device can generate an obvious static negative differential resistance effect, and broadband terahertz radiation can be realized based on the effect.
Furthermore, the first insulating etched groove and the second insulating etched groove are parallel to the input electrode and the output electrode, and the lengths of the first insulating etched groove and the second insulating etched groove are smaller than the length of the two-dimensional semiconductor conducting layer, wherein one insulating etched groove extends to the lower boundary of the two-dimensional semiconductor conducting layer along the length direction of the nano channel, and the other insulating etched groove extends to the upper boundary of the two-dimensional semiconductor conducting layer along the length direction of the nano channel. Through the arrangement, the first low-resistance region and the second low-resistance region can be insulated from each other and can only be conducted with each other through the nano-channel.
Furthermore, the first insulating groove and the second insulating groove are respectively filled with dielectrics with different dielectric constants, so that the dielectric constant of the second insulating groove is larger than that of the first insulating groove. With this arrangement, the negative differential resistance characteristic of the device can be enhanced.
Further, the dielectric constant of the second insulating groove is 30, and the dielectric constant of the first insulating groove is 1.
Furthermore, the width of the nanometer channel is 45-55 nm. Through the arrangement, the nano channel is stronger in lateral field effect.
Furthermore, the two-dimensional semiconductor conducting layer is an AlGaAs/InGaAs heterojunction, and sequentially comprises an InGaAs substrate layer, a two-dimensional electronic gas layer and an AlGaAs covering layer from bottom to top on an AlGaAs/InGaAs heterojunction interface.
Further, the first insulating groove and the second insulating groove vertically penetrate through the two-dimensional electron gas layer.
Furthermore, the depth of the first insulation groove and the second insulation groove is more than or equal to 300 nm. By this arrangement, the influence of the depth fluctuation on the device performance during processing can be avoided.
Further, the thickness of the InGaAs substrate layer is 500nm, and the thickness of the AlGaAs covering layer is 30 nm.
Furthermore, the length of the terahertz device is 1-2 microns, and the width of the terahertz device is 420-480 nm. Therefore, the structure of the whole device is in the micro-nano level, so that the integration of the device is facilitated.
For a better understanding and practice, the invention is described in detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic surface structure diagram of a terahertz device having a static negative differential resistance characteristic according to embodiment 1.
Fig. 2 is a schematic sectional structure diagram of a terahertz device having a static negative differential resistance characteristic according to embodiment 1.
Fig. 3 is a current-voltage output characteristic obtained by the monte carlo simulation method of example 1.
Fig. 4 is a graph showing current output characteristics of the device at a fixed voltage obtained by the monte carlo simulation method in example 1.
Fig. 5 is a graph showing the relationship between output power and frequency obtained by the monte carlo simulation method in example 1.
Detailed Description
The invention provides a terahertz device with static negative differential resistance characteristics, which is a two-end plane nanometer device with a simple structure and comprises two end electrodes, two low-resistance regions, two insulation notches and a nanometer channel positioned between the two insulation notches. Electrons in the nano channel are under a strong electric field and are limited by the action of a lateral field effect and current steering, the device can generate an obvious static negative differential resistance effect, and a resonant cavity is additionally arranged to form a broadband terahertz radiation source. The device can work at normal temperature, has a structure in micro-nano magnitude, and can realize seamless connection with Monolithic Microwave Integrated Circuits (MMICs).
The present invention will be described in detail below with reference to the drawings, examples and results obtained by numerical simulations.
Example 1
Referring to fig. 1 and fig. 2, wherein fig. 1 is a schematic surface structure diagram of the terahertz device with static negative differential resistance characteristic according to the present embodiment, and fig. 2 is a schematic cross-sectional structure diagram of the terahertz device with static negative differential resistance characteristic according to the present embodiment. The terahertz device with the static negative differential resistance characteristic of the embodiment comprises an insulating substrate layer 5, a two-dimensional semiconductor conducting layer with negative differential mobility, an insulating protective layer, an insulating groove, an input electrode 1 and an output electrode 2, wherein the two-dimensional semiconductor conducting layer is arranged on the surface of the insulating substrate layer, the insulating protective layer is arranged on the surface of the two-dimensional semiconductor conducting layer, and the insulating groove penetrates through the two-dimensional semiconductor conducting layer. The length of the device is preferably 1-2 mu m, and the width of the device is preferably 420-480 nm.
The device comprises an insulating substrate layer 5, a two-dimensional semiconductor conducting layer and an insulating protective layer (not shown in the figure) from bottom to top in sequence from the perspective of a cross-sectional structure. In this embodiment, the device is fabricated based on an AlGaAs/InGaAs heterojunction structure plane, the two-dimensional semiconductor conductive layer is an AlGaAs/InGaAs heterojunction, and the structure sequentially includes an InGaAs substrate layer 6, a two-dimensional electron gas layer 7 on an AlGaAs/InGaAs heterojunction interface, and an AlGaAs capping layer 8 from bottom to top.
Viewed from the surface structure, the device further comprises a first insulating groove 3, a second insulating groove 4, an input electrode 1 and an output electrode 2, wherein the first insulating groove 3 is close to the input electrode 1, and the second insulating groove 4 is close to the output electrode 2. The first insulating groove 3 and the second insulating groove 4 are obtained by etching on a two-dimensional semiconductor conducting layer, both vertically penetrate through a two-dimensional electronic gas layer 7 on an AlGaAs/InGaAs heterojunction interface, and the depth is preferably more than 300 nm. The first insulating groove 3 and the second insulating groove 4 are respectively filled with dielectrics with different dielectric constants, so that the dielectric constant of the second insulating groove 4 is larger than that of the first insulating groove 3. The input electrode 1 and the output electrode 2 are respectively connected to the left side and the right side of the two-dimensional semiconductor conducting layer, and voltages with different sizes and different waveforms can be applied.
In this embodiment, the first insulating notch 3 and the second insulating notch 4 are longitudinally spaced, that is, are disposed along the long side direction of the two-dimensional semiconductor conductive layer, and are parallel to the input electrode 1 and the output electrode 2, and the lengths of the two insulating notches are the same and smaller than the length of the two-dimensional semiconductor conductive layer, and the two insulating notches separate the two-dimensional semiconductor conductive layer into three regions, namely, a left region, a middle region and a right region, wherein the left region is connected with the input electrode 1 to form a left planar resistor a with a low resistance, the right region is connected with the output electrode 2 to form a right planar resistor B with a low resistance, and the middle region forms the nano channel G. The nanometer channel G is parallel to the input electrode 1 and the output electrode 2, and the width of the nanometer channel G is preferably 45-55 nm. The left and right sides of the nano-channel G are insulated from the left planar resistor A and the right planar resistor B respectively, but are affected by an electric field (field effect) transmitted from the electrodes through the low-resistance region.
In this embodiment, the first longitudinal insulation notch 3 extends to the lower boundary of the device along the electron transport direction in the nano channel G, the second longitudinal insulation notch 4 extends to the upper boundary of the device along the opposite direction of the electron transport direction in the nano channel G, at this time, the upper half portion of the first insulation notch 3 is opposite to the lower half portion of the second insulation notch 4, the nano channel G is formed between the opposite portions, the left side planar resistor a and the right side planar resistor B are insulated from each other and can only be conducted with each other through the nano channel G, and carriers between the left side planar resistor a and the right side planar resistor B can only flow through the nano channel G.
Compared with the prior art, the two insulating etched grooves of the embodiment are parallel to the left and right end electrodes, wherein a nano channel is formed between the upper half part of the first insulating etched groove and the lower half part of the second insulating etched groove, namely between the opposite parts of the two insulating etched grooves, the nano channel is parallel to the left and right end electrodes, so that current enters the nano channel and deflects by 90 degrees, and current leaves the nano channel and also deflects by 90 degrees; the nanometer channel is parallel to the electrode, so that most of voltage in the device falls on the nanometer channel, the electron mobility in the nanometer channel enters a negative differential area under the action of a strong electric field, and meanwhile, under the action of a lateral field effect and current steering limitation, the device generates an obvious static negative differential resistance effect.
The terahertz device of the present embodiment is obtained by using a monte carlo method, and the characteristic parameters adopted in the simulation process of the present embodiment are as follows: the width of the device is 450nm, and the length of the device is 1500 nm; the two insulating etched grooves have the same size, the lengths of the two insulating etched grooves are 1000nm, the widths of the two insulating etched grooves are 100nm, the depths of the two insulating etched grooves are 300nm, the dielectric constant of the first insulating etched groove 3 is 1, and the dielectric constant of the second insulating etched groove 4 is 30; a nano channel G is formed between the upper half part of the first insulating engraved groove 3 and the lower half part of the second insulating engraved groove 4, namely between the transversely opposite parts of the two insulating engraved grooves, and the nano channel G is 500nm in length and 50nm in width; the distance between the edge of the first insulating engraved groove 3 and the input electrode 1 and the distance between the edge of the second insulating engraved groove 4 and the output electrode 2 are both 100 nm; the thickness of the InGaAs base layer 6 is 500nm and the thickness of the AlGaAs cladding layer 8 is 30 nm.
In order to study the current-voltage output characteristics of the device, a voltage step from 0V to 5V was applied to the right end of the device, and the output current of the device as a function of the applied voltage was as shown in fig. 3. As can be seen from fig. 3, when the voltage is between 0V and 1V, the output current of the device increases linearly with the increase of the voltage, which is also consistent with ohm's law; however, when the voltage is greater than 1V and is between 1V and 4V, i.e. during the period from point P to point Q in fig. 3, the current does not increase with the increase of the voltage, but the current continuously decreases with the increase of the voltage, because when the applied voltage gradually increases to exceed the threshold voltage, the electron in the conduction band makes a transition between the main and sub energy valleys, the electron makes a transition from the main energy valley with high mobility to the sub energy valley with low mobility, the average drift rate of the whole electron decreases, and it appears from the figure that the slope of the current-voltage curve is negative, i.e. the negative differential resistance effect.
In order to further investigate the current-voltage output characteristics of the device, and to take an applied bias so that the output current and voltage of the device satisfy the constant voltage of the NDR region, based on the device structure of this embodiment, as can be seen from FIG. 4, the output current and voltage of the device satisfy NDR effect when the voltage is 1V-4V, and therefore the relationship between the output current and voltage of the device when the voltage at the right end of the device is 1V and 3V is investigated. As shown in fig. 4, when the voltage is 0-30ps, the fixed voltage at the right end of the device is 1V, and the magnitude of the current can be seen to be unchanged; when the voltage is 40-70ps, the fixed voltage at the right end of the device is 3V, and a stable state is also formed between the current and the voltage; the variation between 30-40ps is a jump due to abrupt changes in the device voltage magnitude. Based on this static negative differential characteristic exhibited by the device, a conversion between dc and ac is achieved.
In order to further explore the characteristics of the device as a broadband terahertz radiator, the relationship between the conversion efficiency between direct current and alternating current and the frequency of the applied sinusoidal voltage is further explored, and as shown in fig. 5, when the frequency of the applied sinusoidal voltage is 0, the efficiency of converting power is 4%; the frequency of the sinusoidal voltage is increased, namely the period of the sinusoidal voltage is reduced, and when the frequency is reduced to 0 under the conversion of the device, as shown by the point S in fig. 5, the cut-off frequency of the device for realizing the conversion between the direct current and the alternating current can reach 165.83GHz, the terahertz frequency range is reached, and the terahertz radiation under the broadband is realized.
The above-mentioned embodiments only express one embodiment of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (10)
1. A terahertz device with static negative differential resistance characteristics is characterized in that: the two-dimensional semiconductor device comprises an insulating substrate layer, a two-dimensional semiconductor conducting layer with negative differential mobility, an insulating protective layer, an insulating groove, an input electrode and an output electrode, wherein the two-dimensional semiconductor conducting layer is arranged above the insulating substrate layer; the insulation engraved grooves comprise a first insulation engraved groove close to one side of the input electrode and a second insulation engraved groove close to one side of the output electrode, the first insulation engraved groove and the second insulation engraved groove are arranged at intervals, a nano channel is formed between the first insulation engraved groove and the second insulation engraved groove, the two-dimensional semiconductor conducting layer is divided into a first low-resistance area and a second low-resistance area except the nano channel, and one end of the first insulation engraved groove is shorter than one end of the second insulation engraved groove on the same side; the nano channel is parallel to the input electrode and the output electrode; the first low-resistance region and the second low-resistance region are respectively connected with the input electrode and the output electrode and are mutually conducted through the nano channel.
2. The terahertz device having a static negative differential resistance characteristic according to claim 1, wherein: the first insulating engraved groove and the second insulating engraved groove are parallel to the input electrode and the output electrode, the lengths of the first insulating engraved groove and the second insulating engraved groove are smaller than the length of the two-dimensional semiconductor conducting layer, one insulating engraved groove extends to the lower boundary of the two-dimensional semiconductor conducting layer along the length direction of the nanometer channel, and the other insulating engraved groove extends to the upper boundary of the two-dimensional semiconductor conducting layer along the length direction of the nanometer channel.
3. The terahertz device having a static negative differential resistance characteristic according to claim 1 or 2, wherein: the first insulation groove and the second insulation groove are respectively filled with dielectrics with different dielectric constants, so that the dielectric constant of the second insulation groove is larger than that of the first insulation groove.
4. The terahertz device having a static negative differential resistance characteristic according to claim 3, wherein: the dielectric constant of the second insulating groove is 30, and the dielectric constant of the first insulating groove is 1.
5. The terahertz device having a static negative differential resistance characteristic according to claim 3, wherein: the width of the nanometer channel is 45-55 nm.
6. The terahertz device having a static negative differential resistance characteristic according to claim 3, wherein: the two-dimensional semiconductor conducting layer is an AlGaAs/InGaAs heterojunction and sequentially comprises an InGaAs basal layer, a two-dimensional electronic gas layer and an AlGaAs covering layer from bottom to top on an AlGaAs/InGaAs heterojunction interface.
7. The terahertz device having a static negative differential resistance characteristic according to claim 6, wherein: the first insulating groove and the second insulating groove vertically penetrate through the two-dimensional electron gas layer.
8. The terahertz device having a static negative differential resistance characteristic according to claim 7, wherein: the depth of the first insulation groove and the second insulation groove is more than or equal to 300 nm.
9. The terahertz device having a static negative differential resistance characteristic according to claim 6, wherein: the thickness of the InGaAs basal layer is 500nm, and the thickness of the AlGaAs covering layer is 30 nm.
10. The terahertz device having a static negative differential resistance characteristic according to claim 1, wherein: the terahertz device is 1-2 mu m in length and 420-480 nm in width.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4182964A (en) * | 1967-08-22 | 1980-01-08 | Kogyo Gijutsuin | Negative resistance element circuit combinations |
| CN1669144A (en) * | 2001-04-20 | 2005-09-14 | Btg国际有限公司 | Nanoelectronic devices and circuits |
| CN101283461A (en) * | 2005-05-09 | 2008-10-08 | 纳米电子印刷有限公司 | Electronic devices |
| CN101431106A (en) * | 2008-12-05 | 2009-05-13 | 中山大学 | Plane nano electromagnetic radiator structure based on negative differential mobility |
| CN103155147A (en) * | 2011-02-17 | 2013-06-12 | 富士电机株式会社 | Internal wiring structure of semiconductor device |
| CN103219944A (en) * | 2013-04-23 | 2013-07-24 | 华南师范大学 | Frequency multiplier based on lower dimension semiconductor structure |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4182964A (en) * | 1967-08-22 | 1980-01-08 | Kogyo Gijutsuin | Negative resistance element circuit combinations |
| CN1669144A (en) * | 2001-04-20 | 2005-09-14 | Btg国际有限公司 | Nanoelectronic devices and circuits |
| US7224026B2 (en) * | 2001-04-20 | 2007-05-29 | The University Of Manchester | Nanoelectronic devices and circuits |
| CN101283461A (en) * | 2005-05-09 | 2008-10-08 | 纳米电子印刷有限公司 | Electronic devices |
| CN101431106A (en) * | 2008-12-05 | 2009-05-13 | 中山大学 | Plane nano electromagnetic radiator structure based on negative differential mobility |
| CN103155147A (en) * | 2011-02-17 | 2013-06-12 | 富士电机株式会社 | Internal wiring structure of semiconductor device |
| CN103219944A (en) * | 2013-04-23 | 2013-07-24 | 华南师范大学 | Frequency multiplier based on lower dimension semiconductor structure |
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