CN105449030A - Terahertz detector for optical antennas based on active area material - Google Patents
Terahertz detector for optical antennas based on active area material Download PDFInfo
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- CN105449030A CN105449030A CN201511018027.4A CN201511018027A CN105449030A CN 105449030 A CN105449030 A CN 105449030A CN 201511018027 A CN201511018027 A CN 201511018027A CN 105449030 A CN105449030 A CN 105449030A
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- antenna
- transistor
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- optical antenna
- optical
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- 230000003287 optical effect Effects 0.000 title claims abstract description 38
- 239000000463 material Substances 0.000 title claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000002210 silicon-based material Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 2
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
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Abstract
The invention discloses a terahertz detector for optical antennas based on an active area material. The optical antennas and a grid of a transistor adopt the same layer of polycrystalline silicon material, and the thickness is 100-300nm; the optical antennas are respectively arranged on a source end and a drain end of the transistor, a distance between the edge of each antenna and the edge of the grid of the transistor is 100-500nm, and the optical antennas and the source end, the drain end and the grid end of the transistor are separated by filling an oxide in a standard semiconductor technology; the optical antennas adopt dipole antenna or bow-tie antenna structures, and the doping concentration of the polycrystalline silicon material is 1017-1020 atoms per cubic centimeter; the thicknesses of the antennas are equal to the thicknesses of the source end and the drain end of the transistor, and the antennas, the source end and the drain end are respectively connected to a whole body.
Description
Technical field
The present invention relates to terahertz signal field of detecting, more relate to a kind of optical antenna that utilizes as the panel detector structure of Signal reception.
Background technology
Mention in the applicant CN201410263961.1 (prior art) patent application, the optical antenna of polycrystalline silicon material is used to replace traditional wave antenna, by regulating the doping content of polysilicon, the plasma frequency of antenna is made to equal the frequency of measured signal, thus on antenna, produce surface phasmon SPP, the local realizing THz electric field strengthens, thus improves the voltage response of detector.It is little that optical antenna has size, and the simple feature of structure, reduces the design difficulty of detector, is conducive to the integrated of detector large scale array.
The terahertz detector structure mentioned in prior art as shown in Figure 1, its antenna using polysilicon layer to make is 104 and 105, be placed in the source 101 of transistor respectively, leak 102 two ends, 103 is the grid of transistor, and antenna can adopt the version such as bowknot, dipole.As shown in Figure 2, the optical antenna 204 and 205 made with polysilicon layer is placed in the two ends of transistor source 201 and drain terminal 202 to panel detector structure sectional view respectively.By regulating doping content (i.e. every cm of polysilicon
3the atomicity 10 of unit volume
17~ 10
20), the plasma frequency of polysilicon antenna is adjusted to Terahertz frequency band, when the frequency of incident Terahertz ray is equal with the plasma frequency of antenna, optical antenna surface will produce surface phasmon SPP, realizes the enhancing of local electric field at the gap location of antenna.
Because the plane at the local enhanced field place of optical antenna generation in prior art and the plane at transistor channel place be not at same plane, if design in same plane by optical antenna and transistor channel, the response of transistor should have better effect.
Summary of the invention
The present invention seeks to, improve prior art, active area silicon materials are adopted to make the antenna of terahertz detector, optical antenna and transistor channel are designed at grade, make the local enhanced field at transistor channel place maximum, thus reduce the size of detector, the terahertz signal response of detection same intensity can be larger.
The present invention demonstrates the response of detector to the terahertz signal under fixed frequency by experiment.
Technical solution of the present invention is, a kind of optical antenna terahertz detector based on active area materials, comprises optical antenna and transistor gate adopts same layer polycrystalline silicon material, and thickness is 100 ~ 300nm, adulterates to be realized by independent technique; Optical antenna is placed in source electrode and the drain electrode two ends of transistor respectively, and antenna edge distance transistor gate edges spacing is 100 ~ 500nm, and optical antenna and transistor source, drain terminal and grid end are separated by fill oxide in standard semi-conductor processes; Optical antenna adopts dipole antenna or bowtie-shaped antenna structure, and the doping content of polycrystalline silicon material is 10
17~ 10
20atom/every cubic centimetre; The terahertz detector programme of work of optical antenna is on transistor gate, add DC offset voltage, source ground, drain electrode floating, and signal voltage exports from drain electrode; Antenna thickness is identical with source transistor drain terminal thickness, is connected by antenna in aggregates respectively with source and drain; Ensure that the local enhanced field that antenna produces concentrates in transistor channel.
Terahertz detector basic structure described in the invention as shown in Figure 3, the material of optical antenna is active area silicon materials, antenna pattern is the combining form of bowtie-shaped antenna or dipole antenna, optical antenna (304) and (305) are linked as an entirety with the side of source electrode (301) and drain (302) respectively, and thickness and the source of transistor, the thickness that drains are identical, just in technique, source-drain electrode have passed through metalized, and optical antenna does not carry out metalized, the grid that (303) are transistor.In order to see the structure of detector more clearly, Fig. 4 is sectional view and the local electric-field enhancing region of detector, and (405) two ends that are optical antenna (404), and (402) be transistor source electrode and drain electrode (401), 405 is the grid of transistor, and dotted line institute region is enhancing region, field.Fig. 6 is the voltage response experimental result picture of terahertz detector of the present invention, this experimental result is the voltage response result of the THz source signal being 650GHz to frequency, and the parameter of optical antenna is respectively: D=20 micron, L=68 micron, W=1 micron, θ=120 degree, doping content are 10
20.
Beneficial effect of the present invention: the present invention adopts active area silicon materials to make the antenna of terahertz detector, optical antenna and transistor channel are designed at grade, the local enhanced field at transistor channel place can be made so maximum, thus the terahertz signal response of detection same intensity can be larger.Same, owing to being the local enhancing that the surface plasmons (SPP) utilizing optical antenna to produce realizes field, and the wavelength of terahertz signal is much smaller in the wavelength ratio air of SPP, so the size of optical antenna is more much smaller than conventional electrical antenna, thus the size of detector also can reduce further, be conducive to the integrated of extensive detector array.
Accompanying drawing explanation
Fig. 1 is the plane graph of prior art panel detector structure.
Fig. 2 is the sectional view of prior art panel detector structure.
Fig. 3 is the plane graph of panel detector structure of the present invention.
Fig. 4 is the sectional view of panel detector structure of the present invention.
Fig. 5 is detector equivalent circuit diagram of the present invention.
Fig. 6 is the experimental result picture of detector voltage of the present invention response.
Embodiment
The frequency of the Terahertz light source that experimental result of the present invention uses is 650GHz, and the parameter of the optical antenna that this frequency is corresponding is respectively: D=20 micron, L=68 micron, W=1 micron, θ=120 degree, doping content are 10
20every cubic centimetre.
In experiment, detector is placed on the Terahertz light source place of 650GHz, makes detector plane mutually vertical with terahertz light plane, namely ensure that terahertz light vertically impinges upon on optical antenna.Fig. 5 is the equivalent circuit diagram of experiment, and by source transistor end ground connection, Gate end (503) adds a variable voltage V
gt, drain terminal is received on lock-in amplifier.If the AC signal that antenna produces is V
ac, due to the rectification characteristic of transistor drain terminal, the continuous off-state voltage obtained at drain terminal (502) is
wherein K is the parameter relevant with transistor parameter.By regulating V
gtsize, drain terminal export continuous off-state voltage V
accan change, final voltage response is with V thereupon
gtchange as shown in Figure 6.Can find out that the voltage of detector rings maximum and appears at about 0.4V, i.e. the near threshold voltage of transistor, the trend of response demonstrates correctness of the present invention.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment; and need not one restriction the present invention; within the spirit and principles in the present invention all, any amendment done, equivalent replacement, simple modifications etc., all should be included within protection scope of the present invention.
Claims (2)
1. based on an optical antenna terahertz detector for active area materials, it is characterized in that optical antenna and transistor gate adopt same layer polycrystalline silicon material, thickness is 100 ~ 300nm, adulterates to be realized by independent technique; Optical antenna is placed in source electrode and the drain electrode two ends of transistor respectively, and antenna edge distance transistor gate edges spacing is 100 ~ 500nm, and optical antenna and transistor source, drain terminal and grid end are separated by fill oxide in standard semi-conductor processes; Optical antenna adopts dipole antenna or bowtie-shaped antenna structure, and the doping content of polycrystalline silicon material is 10
17~ 10
20atom/every cubic centimetre; Antenna thickness is identical with source transistor drain terminal thickness, is connected by antenna in aggregates respectively with source and drain.
2. the optical antenna terahertz detector based on active area materials according to claim 1, it is characterized in that the terahertz detector programme of work of described optical antenna is on transistor gate, add DC offset voltage, source ground, drain electrode floating, signal voltage exports from drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511018027.4A CN105449030B (en) | 2015-12-29 | 2015-12-29 | A kind of optical antenna terahertz detector based on active area materials |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511018027.4A CN105449030B (en) | 2015-12-29 | 2015-12-29 | A kind of optical antenna terahertz detector based on active area materials |
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| Publication Number | Publication Date |
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| CN105449030A true CN105449030A (en) | 2016-03-30 |
| CN105449030B CN105449030B (en) | 2018-11-02 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106887670A (en) * | 2017-02-27 | 2017-06-23 | 天津大学 | The dipole antenna terahertz detector integrated with NMOS temperature sensors |
| CN110274889A (en) * | 2018-03-15 | 2019-09-24 | 南京大学 | Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna |
| CN111834732A (en) * | 2019-04-22 | 2020-10-27 | 南京大学 | Terahertz multi-frequency detector based on integrated circuit technology and detection method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054891A (en) * | 2010-10-13 | 2011-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Room-temperature terahertz wave detector |
| CN103733430A (en) * | 2011-08-09 | 2014-04-16 | 新泽西理工学院 | Broadband circularly polarized bent-dipole based antennas |
| CN104091837A (en) * | 2014-06-13 | 2014-10-08 | 南京大学 | Terahertz detector based on optical antenna |
-
2015
- 2015-12-29 CN CN201511018027.4A patent/CN105449030B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054891A (en) * | 2010-10-13 | 2011-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Room-temperature terahertz wave detector |
| CN103733430A (en) * | 2011-08-09 | 2014-04-16 | 新泽西理工学院 | Broadband circularly polarized bent-dipole based antennas |
| CN104091837A (en) * | 2014-06-13 | 2014-10-08 | 南京大学 | Terahertz detector based on optical antenna |
Non-Patent Citations (3)
| Title |
|---|
| AUDREY ZAK: ""Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene"", 《NANO LETTERS》 * |
| JIAYUE TONG: ""Antenna enhanced graphene THz emitter and detector"", 《NANO LETTERS》 * |
| 孙建东 等: ""蝶形天线增强的HEMT室温太赫兹探测器"", 《器件与技术》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106887670A (en) * | 2017-02-27 | 2017-06-23 | 天津大学 | The dipole antenna terahertz detector integrated with NMOS temperature sensors |
| CN110274889A (en) * | 2018-03-15 | 2019-09-24 | 南京大学 | Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna |
| CN110274889B (en) * | 2018-03-15 | 2021-05-28 | 南京大学 | Multichannel terahertz spectrum detection unit based on surface plasma resonance antenna |
| CN111834732A (en) * | 2019-04-22 | 2020-10-27 | 南京大学 | Terahertz multi-frequency detector based on integrated circuit technology and detection method thereof |
| CN111834732B (en) * | 2019-04-22 | 2022-03-18 | 南京大学 | Terahertz multi-frequency detector based on integrated circuit technology and detection method thereof |
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| CN105449030B (en) | 2018-11-02 |
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