CN104091837B - A kind of terahertz detector of optically-based antenna - Google Patents
A kind of terahertz detector of optically-based antenna Download PDFInfo
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- CN104091837B CN104091837B CN201410263961.1A CN201410263961A CN104091837B CN 104091837 B CN104091837 B CN 104091837B CN 201410263961 A CN201410263961 A CN 201410263961A CN 104091837 B CN104091837 B CN 104091837B
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- 230000003287 optical effect Effects 0.000 claims abstract description 56
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 229920005591 polysilicon Polymers 0.000 claims abstract description 19
- 239000002210 silicon-based material Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000007667 floating Methods 0.000 claims abstract description 4
- 230000005684 electric field Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
A kind of terahertz detector of optically-based antenna, optical antenna, transistor or the field effect transistor made including polysilicon material layer；Optical antenna is respectively placed in source electrode and the drain electrode two ends of transistor, and antenna edge distance transistor gate edges spacing is 100～500nm, and optical antenna is separated by fill oxide in standard technology with transistor source, drain terminal and grid end；Optical antenna and transistor gate use same layer polycrystalline silicon material, but doping is implemented separately by other techniques, and its thickness is 100～300nm；Optical antenna uses dipole antenna, bowtie-shaped antenna structure, and the doping content of polycrystalline silicon material is 1017～1020；The terahertz detector programme of work of optical antenna is, plus DC offset voltage on transistor gate, source ground, drain floating, and signal voltage is from drain electrode output.
Description
Technical field
The present invention relates to terahertz signal field of detecting, further relate to a kind of utilize optical antenna as the spy of signal receiving part
Survey device structure, it is possible to realize bigger response.
Background technology
The electromagnetic wave that Terahertz is a kind of frequency between infrared and microwave, it has a lot of unique performance.Due to too
The frequency of hertz is the highest, and its spatial resolution and temporal resolution are the highest.The most many nonmetal polar materials are to Terahertz
Radiation absorption is less, therefore, it is possible to detection material internal information, Terahertz electromagnetic energy is less in addition, will not produce material
Raw destruction, and the resonant frequency of biomolecule vibration and rotational frequency is all at terahertz wave band, therefore Terahertz is in agriculture
Industry and food-processing industry also have good application prospect.Terahertz becomes to broadband connections, radar, medical science at present
The fields such as picture, Non-Destructive Testing, safety inspection bring far-reaching influence.
Had at present the report of multiple terahertz signal panel detector structure, as document [F Schuster, Optics Express,
Vol.19, No.8, April2011] the middle terahertz detector utilizing top-level metallic to make microstrip antenna composition reported,
Its structure as it is shown in figure 1, the microstrip antenna 104 and 105 that makes of top-level metallic through through hole respectively with the source 101 of transistor
It is connected with leakage 102, on transistor gate 103, during work, adds appropriate bias voltage, the alternating current that microstrip antenna produces
Pressure signal is added in device source, leakage, and AC signal rectification is direct current signal by the process of self-mixing by transistor, passes through
Transistor drain terminal reads, thus realizes the detection to terahertz signal.This detector cross section is as in figure 2 it is shown, antenna pushes up
Layer metal (assuming 3 layers of smithcraft) makes and passes through through hole 208 and is connected with second layer metal 207, and by logical
Hole 206 is connected with first layer metal 205, realizes the source electrode 201 with transistor and drain terminal 202 eventually through through hole 204
It is connected.This detector is based on standard integrated circuit processing technique, it is possible to realize the Highgrade integration of function, low in energy consumption,
And there is cost advantage.
But what above-mentioned detector utilized is still traditional wave antenna that metal is made, and antenna size is at least 1/2 wavelength,
Size is relatively big, is unfavorable for the integrated of detector array.Meanwhile, the gain of wave antenna is limited, makes with wave antenna
Detector voltage response is limited.
Summary of the invention
For the problems referred to above, the present invention seeks to, propose the novel terahertz detector of a kind of optically-based antenna, utilize
The surface phasmon (surface plasmon polariton, SPP) that optical antenna produces, it is achieved the local of THz wave increases
By force, make explorer response bigger, and detector size is further reduced.
The technical scheme is that the terahertz detector of a kind of optically-based antenna is made including polysilicon material layer
Optical antenna, transistor or field effect transistor；Optical antenna is respectively placed in source electrode and drain electrode two ends, the antenna limit of transistor
Edge distance transistor gate edges spacing is 100～500nm, and optical antenna and transistor source, drain terminal and grid end are by mark
In quasi-technique, fill oxide separates；Optical antenna and transistor gate use same layer polycrystalline silicon material, but doping is passed through
Other techniques are implemented separately, and its thickness is 100～300nm；Optical antenna uses dipole antenna, bowtie-shaped antenna sky
Line structure, material is doped polycrystalline silicon materials, and the doping content of polycrystalline silicon material is 1017～1020；The terahertz of optical antenna
Hereby detector programme of work is, plus DC offset voltage on transistor gate, source ground, drain floating, signal
Voltage is from drain electrode output.
Further, using polysilicon as antenna material, transistor gate position 303 is positioned at the centre of antenna gap, brilliant
Body tube grid 303 is also polysilicon layer, grid length a size of 50～300nm.Transistor gate 303 does silicon metallizing
(silicide) technique, to improve electric conductivity, and optical antenna 304 and 305 does not do silicon metallizing process, keeps half
Conductor characteristics.
Further, optical antenna uses the form that dipole and bowtie-shaped structure combine, and its dipole length D scope is
1～10 micron, width W is 1～5 micron；Bowtie-shaped partial radius L is 5～30 microns, and subtended angle angle is 90～180
Degree.
Further, by regulating the doping content of polycrystalline silicon material, make the plasma frequency of antenna equal to measured signal
Frequency, thus on antenna, produce surface phasmon SPP, it is achieved the local of THz electric field strengthens.
The doping content of polycrystalline silicon material is 1017～1020.N-shaped or p-type polysilicon doping can be used.And polysilicon light
Learn antenna metal silicide to be avoided the formation of (silicide) in technique manufacture.
According to document [R.B.M.Schafoort, Handbook of surface plasmon resonance, The Royal
Society of Chemistry, 2008], the plasma frequency of material is relevant with electron concentration n of material, i.e. wherein
For electron effective mass.Therefore the present invention is by regulating the doping content of polysilicon antenna, makes the plasma frequency of optical antenna
Equal to Terahertz frequency range.If terahertz signal frequency is equal to the plasma frequency of optical antenna, when this Terahertz ray enters
When being mapped on detector, surface phasmon SPP will be produced on optical antenna surface, thus realize terahertz signal field
Local enhancement effect.Much less than the terahertz signal wavelength in air of the wavelength of surface phasmon simultaneously, therefore use
The size of the optical antenna that polysilicon is made is much smaller than the wave antenna made with metal, whole detector cells
Area can greatly reduce, and is conducive to improving scale and the integrated level of detector array.
Effective benefit of the present invention is: terahertz detector of the present invention utilizes (doping) polycrystalline silicon material to make sky
Line, by regulating the doping content of polycrystalline silicon material, makes the plasma frequency frequency equal to measured signal of antenna, from
And on antenna, producing surface phasmon SPP, it is achieved the local of THz electric field strengthens, thus improves the voltage of detector
Response.
The SPP that terahertz detector of the present invention utilizes optical antenna to produce realizes the local of field to be strengthened, and SPP
Much less than the wavelength of terahertz signal in air of wavelength, therefore the size of optical antenna is than the electric wave made with metal
Antenna is little many, and detector area is reduced, and beneficially detector large scale array is integrated.Of the present invention too
Hertz detector utilizes polycrystalline silicon material as antenna, simple in construction, reduces detector design difficulty.
Accompanying drawing explanation
Fig. 1 is terahertz detector plane graph based on tradition wave antenna structure.
Fig. 2 is terahertz detector sectional view based on tradition wave antenna structure.
Fig. 3 is the terahertz detector structural plan figure of optically-based antenna of the present invention.
Fig. 4 is the terahertz detector sectional view of optically-based antenna of the present invention.
Fig. 5 is detector equivalent circuit diagram of the present invention.
Fig. 6 is detector electric field gain simulation result figure of the present invention.
Specific embodiment
For making present disclosure clearer, make to retouch the most in detail to embodiment of the present invention below in conjunction with accompanying drawing
State.
Fig. 3 show the terahertz detector structural plan schematic diagram of optically-based antenna of the present invention.Use polysilicon
As antenna material, antenna 304 and 305 is respectively placed in transistor source 301 and drain terminal 302 two ends.Utilize polysilicon
The two ends 304 and 305 of layer composition antenna, the two ends of antenna are respectively placed in the source 301 of transistor, leak 302 two ends, brilliant
Body tube grid 303 is positioned at the centre of antenna gap, and transistor gate 303 is also polysilicon layer, and grid length is a size of
50～300nm.Transistor gate 303 does silicon metallizing (silicide) technique, to improve electric conductivity, and optical antenna
304 and 305 do not do silicon metallizing process, keep characteristic of semiconductor.Optical antenna and the grid of transistor, source electrode and leakage
Pole is separated by fill oxide in standard integrated circuit technology.
The polycrystalline silicon material that antenna uses and transistor gate 303 is same, but the doping of antenna material is by single technique
Realize.Transistor gate 303 is the centre in gap between antenna 304 and 305, and transistor gate length is a size of
50～300nm, optical antenna and transistor gate 303, source electrode 301 and drain electrode 302 are by standard integrated circuit technology
Fill oxide separates.Polysilicon optical antenna 304 and 305 can use bowknot, dipole both combination etc. to tie
Structure, alloying with silicon compound (Silicide) to be avoided the formation of on polysilicon layer optical antenna during making, it is possible to use SAB
(silicide block) layer blocks realization, and its concrete technology is, in silicon metallizing production technology, on optical antenna
Face is blocked with photoresist, and the most whole wafer is exposed in the metal such as titanium, cobalt (depending on concrete technology), transistor gate
Pole, source electrode and drain electrode complete silicon metallizing process, and to improve electric conductivity, and optical antenna still keeps characteristic of semiconductor.Visit
Surveying device structural section figure as shown in Figure 4, the optical antenna 404 and 405 made with polysilicon layer is respectively placed in source transistor
End 401 and the two ends of drain terminal 402.
In the present embodiment, optical antenna uses the form that dipole and bowtie-shaped structure combine, its dipole length D
Scope is 1～10 micron, and width W is 1～5 micron；Bowtie-shaped partial radius L is 5～30 microns, and subtended angle angle is 90～180
Degree.The terahertz detector programme of work of optically-based antenna of the present invention is, inclined plus direct current on transistor gate
Put voltage Vgt, source ground, drain floating, and signal voltage is from drain electrode output.
By regulating the doping content of polycrystalline silicon material, make the plasma frequency frequency equal to measured signal of antenna, from
And on antenna, producing surface phasmon SPP, it is achieved the local of THz electric field strengthens.
As shown in Figure 4, transistor is positioned at the gap location of optical antenna 403 and 404 to the sectional view of detector.
As shown in Figure 4, in the local fields that optical antenna produces gap between antennas, i.e. the region at transistor place,
Due to the rectified action of transistor, these high-frequency signals will be rectified, and obtain a Dc bias at transistor drain terminal.This
Invent described whole detector equivalent circuit as it is shown in figure 5, DC offset voltage is V on gridgt, optical antenna produces
AC signal be expressed as Vac, then the DC rectifier signal that transistor drain terminal reads is that wherein K is and transistor parameter
Relevant parameter.
By regulating the doping content (10 of polysilicon17～1020), so that the plasma frequency of polysilicon antenna is too
Hertz frequency wave band, when the frequency of incident Terahertz ray is equal with the plasma frequency of antenna, optical antenna surface
Surface phasmon SPP will be produced, THz electric field will local at optical antenna gap location, be illustrated in figure 6 crystal
Pipe region electric field gain simulation result figure, it can be seen that by regulating the impurity doping concentration of antenna, it is possible to make antenna
Plasma concentration regulate near 1THz, thus realize the signal of 1THz frequency is detected.
Optical antenna of the present invention is capable of the local of THz electric field to be strengthened, and transistor is positioned at the THz electric field of enhancing
In, and transistor has rectified action, it is possible to AC signal is rectified into direct current signal thus is read by external circuit.As
Fig. 5 show detector equivalent circuit diagram of the present invention, and the AC signal that antenna produces is Vac, then transistor leakage
The continuous off-state voltage that end rectification obtains is that wherein K is the parameter relevant with transistor parameter.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment, and need not one limit the present invention,
All within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. made, should be included in this
Within bright protection domain.
Claims (1)
1. a terahertz detector for optically-based antenna, is characterized in that including optical antenna and the transistor that polysilicon material layer is made；Optical antenna is respectively placed in source electrode and the drain electrode two ends of transistor, and optical antenna Edge Distance transistor gate edges spacing is 100 ~ 500nm, and optical antenna is separated by fill oxide in standard technology with transistor source, drain and gate；Optical antenna and transistor gate use same layer polycrystalline silicon material, but doping is implemented separately by other techniques, and its thickness is 100 ~ 300nm；Optical antenna material is doped polycrystalline silicon materials, and the doping content of polycrystalline silicon material is 1017~1020；The terahertz detector programme of work of optical antenna is, plus DC offset voltage on transistor gate, source ground, drain floating, and signal voltage is from drain electrode output；
Using doped polycrystalline silicon materials to be positioned at the centre in optical antenna gap as optical antenna material, transistor gate position, transistor gate is also polysilicon layer, grid length a size of 50 ~ 300nm；Transistor gate does silicon metallizing process, and to improve electric conductivity, and optical antenna does not do silicon metallizing process, keeps characteristic of semiconductor；
Optical antenna uses the form that dipole and bowtie-shaped structure combine, and its dipole length D scope is 1 ~ 10 micron, and width W is 1 ~ 5 micron；Bowtie-shaped partial radius L is 5 ~ 30 microns, and subtended angle angle is 90 ~ 180 degree；
By regulating the doping content of doped polycrystalline silicon materials, make the plasma frequency frequency equal to measured signal of optical antenna, thus on optical antenna, produce surface phasmon SPP, it is achieved the local of THz electric field strengthens；The doping content 10 of regulation DOPOS doped polycrystalline silicon17~1020Make the plasma frequency of polysilicon optical antenna at Terahertz frequency band, when the frequency of incident Terahertz ray is equal with the plasma frequency of optical antenna, optical antenna surface will produce surface phasmon SPP, THz electric field will local at optical antenna gap location, by regulating the impurity doping concentration of optical antenna polycrystalline silicon material, it is possible to make the plasma frequency of optical antenna regulate between 0.1 ~ 10THz.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410263961.1A CN104091837B (en) | 2014-06-13 | 2014-06-13 | A kind of terahertz detector of optically-based antenna |
| PCT/CN2014/095072 WO2015188608A1 (en) | 2014-06-13 | 2014-12-26 | Optical antenna-based terahertz detector |
| PCT/CN2015/072736 WO2015188634A1 (en) | 2014-06-13 | 2015-02-11 | Optical antenna-based terahertz detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410263961.1A CN104091837B (en) | 2014-06-13 | 2014-06-13 | A kind of terahertz detector of optically-based antenna |
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| CN104091837A CN104091837A (en) | 2014-10-08 |
| CN104091837B true CN104091837B (en) | 2016-09-28 |
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Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091837B (en) * | 2014-06-13 | 2016-09-28 | 南京大学 | A kind of terahertz detector of optically-based antenna |
| CN104596641B (en) * | 2015-01-21 | 2017-03-08 | 中国科学院半导体研究所 | Terahertz wave detector |
| WO2016131400A1 (en) * | 2015-02-16 | 2016-08-25 | 上海交通大学 | Highly sensitive nano photo-transistor and manufacturing method therefor, and photo-communication device and spectrum splitter device using same |
| CN104900999A (en) * | 2015-05-13 | 2015-09-09 | 南京大学 | Terahertz double-frequency antenna based on integrated circuit technology |
| CN105333951B (en) * | 2015-11-10 | 2017-11-21 | 中国科学院半导体研究所 | Terahertz wave detector based on field-effect transistor |
| CN105449030B (en) * | 2015-12-29 | 2018-11-02 | 南京大学 | A kind of optical antenna terahertz detector based on active area materials |
| CN105679778B (en) * | 2016-03-04 | 2019-02-22 | 天津大学 | A kind of terahertz detector chip |
| CN105590986B (en) * | 2016-03-16 | 2017-01-18 | 侯皓文 | Room temperature terahertz detector based on gallium nitride high electron mobility transistor and preparation method thereof |
| CN105811072A (en) * | 2016-05-13 | 2016-07-27 | 东南大学 | High-impedance and high-gain antenna and graphene terahertz detector thereof |
| CN108336498A (en) * | 2017-01-19 | 2018-07-27 | 天津大学 | A kind of metal antenna coupling THz wave thermal detector structure based on CMOS technology |
| CN106921020A (en) * | 2017-02-27 | 2017-07-04 | 天津大学 | The THz wave thermal detector of the polysilicon antenna coupling based on CMOS technology |
| JP6918591B2 (en) * | 2017-06-16 | 2021-08-11 | 株式会社豊田中央研究所 | Electromagnetic wave detector and its manufacturing method |
| CN110274889B (en) * | 2018-03-15 | 2021-05-28 | 南京大学 | Multichannel terahertz spectrum detection unit based on surface plasma resonance antenna |
| CN109378354A (en) * | 2018-09-19 | 2019-02-22 | 天津大学 | A kind of silicon substrate rasterisation grid terahertz detector |
| CN109686810A (en) * | 2018-12-19 | 2019-04-26 | 中国科学院半导体研究所 | Side grid field effect transistor terahertz detector and preparation method thereof |
| EP3780913A4 (en) * | 2019-01-31 | 2021-06-16 | Korea Research Institute of Standards and Science | Planar-type plasma diagnosis apparatus, wafer-type plasma diagnosis apparatus in which planar-type plasma diagnosis apparatus is buried, and electrostatic chuck in which planar-type plasma diagnosis apparatus is buried |
| WO2022072423A1 (en) * | 2020-09-29 | 2022-04-07 | Michael Shur | Line-of-sight detector and communication system in sub-thz and thz ranges |
| CN114719967B (en) * | 2021-01-04 | 2024-06-25 | 中国科学院沈阳自动化研究所 | Terahertz wave detector based on field effect transistor and double-antenna structure |
| CN115295633A (en) * | 2022-08-04 | 2022-11-04 | 赛丽科技(苏州)有限公司 | Waveguide photoelectric detector integrated with antenna, system and method for sending signals |
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| CN104091837B (en) * | 2014-06-13 | 2016-09-28 | 南京大学 | A kind of terahertz detector of optically-based antenna |
-
2014
- 2014-06-13 CN CN201410263961.1A patent/CN104091837B/en active Active
- 2014-12-26 WO PCT/CN2014/095072 patent/WO2015188608A1/en active Application Filing
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- 2015-02-11 WO PCT/CN2015/072736 patent/WO2015188634A1/en active Application Filing
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| CN102575961A (en) * | 2009-10-23 | 2012-07-11 | 国际商业机器公司 | Terahertz detector comprising a capacitively coupled antenna |
| CN102445711A (en) * | 2010-09-30 | 2012-05-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | THz-wave detector |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015188608A1 (en) | 2015-12-17 |
| CN104091837A (en) | 2014-10-08 |
| WO2015188634A1 (en) | 2015-12-17 |
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