CN114823619A - Coaxial via structure and method of manufacturing the same - Google Patents
Coaxial via structure and method of manufacturing the same Download PDFInfo
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- CN114823619A CN114823619A CN202111170637.1A CN202111170637A CN114823619A CN 114823619 A CN114823619 A CN 114823619A CN 202111170637 A CN202111170637 A CN 202111170637A CN 114823619 A CN114823619 A CN 114823619A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
Abstract
The invention relates to a coaxial via structure and a method of manufacturing the same. The coaxial via structure includes a substrate, a first conductive structure, a second conductive structure, and an insulating layer. The substrate has a first surface. The first conductive structure comprises a first circuit on the first surface and a first through hole penetrating through the substrate. The second conductive structure includes a second circuit on the first surface of the substrate and a second via penetrating through the substrate. The first through hole and the second through hole extend in the first direction, the first circuit and the second circuit extend in the second direction, and the second direction is perpendicular to the first direction. The insulating layer is positioned between the first through hole and the second through hole, the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar. The coaxial through hole structure can have better electromagnetic noise shielding and impedance matching effects so as to improve the integrity of high-frequency signals. In addition, the coaxial through hole structure can reduce the number of dielectric layers so as to reduce the thickness of the coaxial through hole structure and has the technical effect of reducing the cost.
Description
Technical Field
The present disclosure relates to a coaxial via structure, and more particularly, to a coaxial via structure having coplanar signal and ground lines.
Background
Most of the conventional coaxial via structures require a dielectric layer to be disposed between the ground line and the signal line of different layers by a lamination process, which requires a lot of cost. In addition, since the inner layer wire and the outer layer wire in the via hole have different heights, a problem of impedance mismatch may occur. The dielectric layer disposed between the ground line and the signal line may also generate a shielding gap, resulting in a poor electromagnetic shielding effect.
In view of the above, how to provide a coaxial via structure capable of improving impedance matching and electromagnetic shielding effects is still one of the objectives of the present industry.
Disclosure of Invention
One aspect of the present disclosure is a coaxial via structure.
In one embodiment of the present disclosure, a coaxial via structure includes a substrate, a first conductive structure, a second conductive structure, and an insulating layer. The substrate has a first surface. The first conductive structure comprises a first circuit on the first surface and a first through hole penetrating through the substrate. The second conductive structure includes a second circuit on the first surface of the substrate and a second via penetrating through the substrate. The first through hole and the second through hole extend in the first direction, the first circuit and the second circuit extend in the second direction, and the second direction is perpendicular to the first direction. The insulating layer is positioned between the first through hole and the second through hole, wherein the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar.
In an embodiment of the present disclosure, the first via of the first conductive structure surrounds the second via of the second conductive structure and the insulating layer.
In one embodiment of the present disclosure, the insulating layer, the first via and the second via are coaxial.
In an embodiment of the present disclosure, the insulating layer has a protrusion located at an end of the insulating layer close to the first surface.
In an embodiment of the disclosure, the protruding portion of the insulating layer protrudes away from the second through hole along the second direction.
In an embodiment of the present disclosure, the first via of the first conductive structure, the protrusion of the insulating layer, and the second line of the second conductive structure overlap in the first direction.
In an embodiment of the present disclosure, the substrate further includes a second surface opposite to the first surface, and the coaxial via structure further includes a dielectric layer between the first surface and the second surface, and the protrusion of the insulating layer contacts the dielectric layer.
One aspect of the present disclosure is a method for fabricating a coaxial via structure.
In one embodiment of the present disclosure, a method of fabricating a coaxial via structure includes forming a first via in a substrate; forming a first conductive material on the first surface of the substrate and in the first through hole; forming a groove recessed from the first surface, and communicating the groove with the first through hole; forming an insulating layer in the first through hole and the groove; forming a second conductive material on the first surface of the substrate and in the first through hole; and patterning the first conductive material and the second conductive material to form a first circuit and a second circuit on the first surface, so that the remaining first conductive material and the remaining second conductive material are electrically insulated by the insulating layer in the groove, and the first circuit and the second circuit are coplanar.
In an embodiment of the present disclosure, the coaxial via structure further includes a second surface opposite the first surface, and the forming the recess further includes drilling along the first direction from the first surface.
In one embodiment of the present disclosure, the coaxial via structure further comprises a dielectric layer between the first surface and the second surface, and forming the recess further comprises exposing the dielectric layer from the first conductive material.
In an embodiment of the disclosure, forming the insulating layer in the first via and the recess further includes forming an insulating layer material in the first via and the recess such that the insulating layer material contacts the dielectric layer; and forming a second through hole in the insulating layer material to form an insulating layer, wherein the insulating layer is provided with a protruding part positioned in the groove.
In an embodiment of the disclosure, forming the second conductive material on the first surface of the substrate and in the first via further includes forming the second conductive material in the second via such that the first conductive material in the first via surrounds the insulating layer and the second conductive material in the second via.
In an embodiment of the disclosure, forming the second conductive material on the first surface of the substrate and in the first via further includes making the insulating layer, the first conductive material in the first via coaxial with the second conductive material in the second via.
In an embodiment of the present disclosure, patterning the first conductive material and the second conductive material to form the first line and the second line further includes overlapping the first conductive material in the first via, the protrusion of the insulating layer, and the second line in the first direction.
In the above embodiments, since the coaxial via structure of the present disclosure has the coplanar first line and the coplanar second line, and the first conductive structure and the second conductive structure can be electrically insulated by the insulating layer, the coaxial via structure of the present disclosure can have better electromagnetic noise shielding and impedance matching effects, so as to improve the integrity of the high frequency signal. In addition, the coaxial via structure disclosed by the invention can reduce the number of dielectric layers so as to reduce the thickness of the coaxial via structure. Therefore, the coaxial via structure of the present disclosure can also have the technical effect of reducing the cost.
Drawings
Fig. 1 is a perspective view of a coaxial via structure according to an embodiment of the present disclosure.
Fig. 2 is a cross-sectional view taken along line 2-2 of fig. 1.
Fig. 3A to 11A are top views of intermediate steps of a method for fabricating a coaxial via structure according to an embodiment of the present disclosure.
Fig. 3B to 11B are cross-sectional views taken along line 3B-3B to line 11B-11B in fig. 3A to 11A, respectively.
[ description of main element symbols ]
100 coaxial via structure 110 substrate
112 first surface 114 second surface
116 internal wiring 120 first conductive structure
120M first conductive material 122 first line
124 first via 126 third line
130 second conductive structure 130M second conductive material
132 second line 134 second via
136 fourth line 140 insulating layer
140M insulating layer material 142 first protrusion
144, second protrusion 150, dielectric layer
160, mask 170: insulating protective layer
D1 first direction D2 second direction
OP1, first through hole OP2, second through hole
TR1 first groove TR2 second groove
A is the axis
3B-3B,4B-4B,5B-5B,6B-6B,7B-7B,8B-8B,9B-9B,10B-10B,11B-11B, line segment
W1, W2 width I spacing
Detailed Description
In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of the various embodiments of the present invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, for the sake of simplicity, some conventional structures and elements are shown in the drawings. And the thickness of layers and regions in the drawings may be exaggerated for clarity, and the same reference numerals denote the same elements in the description of the drawings.
Fig. 1 is a perspective view of a coaxial via structure 100 according to an embodiment of the present disclosure. Fig. 2 is a cross-sectional view taken along line 2-2 of fig. 1. Reference is also made to fig. 1 and 2. The coaxial via structure 100 includes a substrate 110, a first conductive structure 120, a second conductive structure 130, and an insulating layer 140.
The substrate 110 has a first surface 112 and a second surface 114 opposite to each other. The first conductive structure 120 includes a first line 122 and a first via 124, and the second conductive structure 130 includes a second line 132 and a second via 134. The first circuit 122 and the second circuit 132 are disposed on the first surface 112. The first via 124 and the second via 134 penetrate the substrate 110. The first through hole 124 and the second through hole 134 extend in the first direction D1. The first line 122 and the second line 132 extend in a second direction D2 perpendicular to the first direction D1. The first line 122 of the first conductive structure 120 is coplanar with the second line 132 of the second conductive structure 130. In other words, the first line 122 and the second line 132 are located on the same horizontal plane.
In the present embodiment, the first direction D1 is a vertical direction in the figure, that is, the first direction D1 is a direction from the first surface 112 to the second surface 114. The second direction D2 can be any horizontal direction perpendicular to the first direction D1, as described earlier. In the present embodiment, the first line 122 and the third line 126 may be ground lines, and the second line 132 and the fourth line 136 may be signal lines, but the disclosure is not limited thereto.
As shown in fig. 2, the first conductive structure 120 further includes a third trace 126 on the second surface 114, and the second conductive structure 130 further includes a fourth trace 136 on the second surface 114. Two ends of the first through hole 124 are respectively connected to the first line 122 and the third line 126. Both ends of the second through hole 134 are connected to the second line 132 and the fourth line 136, respectively. The third line 126 and the fourth line 136 extend in a second direction D2, and the third line 126 and the fourth line 136 are coplanar. In other words, the third line 126 and the fourth line 136 are located on the same horizontal plane.
The insulating layer 140 is located between the first via 124 and the second via 134, and the insulating layer 140 extends in the first direction D1. The first via 124 surrounds the second via 134 and the insulating layer 140, and the insulating layer 140 surrounds the second via 134. As shown in fig. 2, the insulating layer 140, the first via 124, and the second via 134 are coaxial with respect to the axis a.
The insulating layer 140 has a first protrusion 142, and the first protrusion 142 is located at an end of the insulating layer 140 close to the first surface 112. The first protrusion 142 protrudes away from the second through hole 134 along the second direction D2. As shown in fig. 2, the substrate 110 further includes a dielectric layer 150 between the first surface 112 and the second surface 114. In the embodiment, the substrate 110 further includes a plurality of inner lines 116 separated by dielectric layers 150, but the disclosure is not limited thereto. The first protrusion 142 of the insulating layer 140 contacts the dielectric layer 150 near the first surface 112. In other words, the first protrusion 142 extends to the dielectric layer 150 through the first via 124.
It should be understood that, in order to clearly show the structural relationship between the second line 132 and the first protrusion 142, only the first via 124, the second line 132, and the insulating layer 140 are drawn in fig. 1, and the first line 122 is omitted.
As shown in fig. 2, the first via 124 of the first conductive structure 120, the first protrusion 142 of the insulating layer 140, and the second wire 132 of the second conductive structure 130 overlap in the first direction D1. The second trace 132 of the second conductive structure 130 extends from the second via 134 and crosses the first protrusion 142. In other words, the first via 124 and the second line 132 are electrically insulated by the first protrusion 142, and the coplanar first line 122 and the coplanar second line 132 are separated from each other, thereby electrically insulating the first conductive structure 120 from the second conductive structure 130.
As can be seen from the above, since the first line 122 and the second line 132 of the coaxial via structure 100 are coplanar and the first conductive structure 120 is electrically insulated from the second conductive structure 130, the conventional step of adding an additional dielectric layer to electrically insulate the first line and the second line at different layers can be omitted. In this way, the first through hole 124 and the second through hole 134 of the present disclosure have substantially the same height, so that the overall structure of the coaxial through hole structure 100 is relatively symmetrical, thereby improving the impedance matching effect. In addition, since the dielectric layer between the first circuit and the second circuit at different layers can be omitted, the second via 134 is prevented from protruding out of the insulating layer. Therefore, the coaxial through hole structure can avoid the problem of poor electromagnetic shielding effect caused by the notch of the shielding structure.
As shown in fig. 2, the insulating layer 140 further has a second protrusion 144, and the second protrusion 144 is located at an end of the insulating layer 140 close to the second surface 114. The second protrusion 144 protrudes away from the second through hole 134 along the second direction D2. The second protrusion 144 of the insulating layer 140 contacts the dielectric layer 150 proximate the second surface 114. In other words, the second protrusion 144 extends to the dielectric layer 150 through the first via 124.
As shown in fig. 2, the first via 124 of the first conductive structure 120, the second protrusion 144 of the insulating layer 140, and the fourth wire 136 of the second conductive structure 130 overlap in the first direction D1. The fourth trace 136 of the second conductive structure 130 extends from the second via 134 and crosses the second protrusion 144. In other words, the first via 124 and the fourth line 136 are electrically insulated by the second protrusion 144, and the third line 126 and the fourth line 136 are separated from each other, thereby electrically insulating the first conductive structure 120 from the second conductive structure 130. As mentioned above, the extending direction of the fourth wire 136 may be any horizontal direction perpendicular to the first direction D1, and fig. 2 is only an example, and the disclosure is not limited thereto.
It is to be understood that the connection, materials and functions of the elements described above will not be repeated and are described in detail. In the following description, a method of manufacturing a coaxial via structure will be described.
Fig. 3A to 10A are top views of intermediate steps of a method of fabricating a coaxial via structure according to an embodiment of the present disclosure. Fig. 3B to 10B are cross-sectional views taken along line 3B-3B to line 10B-10B in fig. 3A to 10B, respectively. As shown in fig. 3A and 3B, the method of manufacturing the coaxial via structure starts with forming a first through hole OP1 in the substrate 110. The first through hole OP1 penetrates through the inner circuit 116 and the dielectric layer 150 of the substrate 110. For example, the first via OP1 may be formed by laser drilling.
As shown in fig. 4A and 4B, in the manufacturing method of the coaxial via structure, a first conductive material 120M is then formed on the first surface 112, the second surface 114, and the inner wall of the first via OP 1. The first conductive material 120M is formed by electroplating, and the first conductive material 120M is copper, but the disclosure is not limited thereto, and those skilled in the art can select appropriate methods and materials according to circumstances.
As shown in fig. 5A and 5B, in the manufacturing method of the coaxial via structure, the first groove TR1 is formed next. The first groove TR1 is recessed from the first surface 112, and the first groove TR1 communicates with the first through hole OP 1. The first recess TR1 is formed by drilling a hole from the first surface 112 along the first direction D1 such that the dielectric layer 150 adjacent to the first surface 112 is exposed from the first conductive material 120M.
Referring to fig. 5B, this step further includes forming a second groove TR 2. The second groove TR2 is recessed from the second surface 114, and the second groove TR2 communicates with the first through hole OP 1. The second trench TR2 is formed by drilling a hole from the second surface 114 in a direction opposite to the first direction D1 such that the dielectric layer 150 near the second surface 114 is exposed from the first conductive material 120M. For example, the first and second grooves TR1 and TR2 may be formed by laser drilling.
In the top view of fig. 5A, the distance between the first recess TR1 and the first via OP1 can be calculated according to the width of the second circuit 132 and the required distance between the first circuit 122 and the second circuit 132. Similarly, in a bottom view (not shown), the distance between the second groove TR2 and the first through hole OP1 can be calculated according to the width of the fourth circuit 136 and the required distance between the third circuit 126 and the fourth circuit 136.
As shown in fig. 6A and 6B, in the method for manufacturing the coaxial via structure, the insulating layer material 140M is filled into the first via OP1, the first groove TR1 and the second groove TR2, and the insulating layer material 140M contacts the dielectric layer 150 exposed from the first conductive material 120M. In the present embodiment, the insulating layer material 140M may be, for example, a hole-filling ink, but the disclosure is not limited thereto. After filling the insulating layer 140M, the exposed portions of the insulating layer 140M from the first surface 112 and the second surface 114 are polished, such that the upper surface and the lower surface of the insulating layer 140 are flush with the first conductive material 120M, respectively.
As shown in fig. 7A and 7B, in the method for fabricating the coaxial via structure, a second via OP2 is then formed in insulating layer material 140M. In the embodiment, the second through hole OP2 and the first through hole OP1 are concentric circles. For example, second via OP2 is formed by laser drilling, thereby removing a portion of insulating layer material 140M. After forming the second via OP2, the remaining insulating layer material 140M includes a portion (i.e., the insulating layer 140) located in the first via OP1 and the first protrusion 142 and the second protrusion 144 respectively located at two sides of the substrate 110.
As shown in fig. 8A and 8B, in the method for manufacturing the coaxial via structure, a second conductive material 130M is then formed on the first surface 112, the second surface 114, and the second via OP 2. The first conductive material 120M may be formed by electroplating, and the first conductive material 120M may be copper, but the disclosure is not limited thereto, and those skilled in the art can select appropriate methods and materials according to circumstances.
The second conductive material 130M is located in the second via OP2, and the first conductive material 120M (i.e., the first via 124) in the first via OP1 surrounds the insulating layer 140 and the second conductive material 130M (i.e., the second via 134) in the second via OP2, so that the insulating layer 140, the first conductive material 120M in the first via OP1, and the second conductive material 130M in the second via OP2 are coaxial with respect to the axis a.
As shown in fig. 9A and 9B, in the method for manufacturing the coaxial via structure, a mask 160 is formed on the first surface 112 and the second surface 114. The mask 160 includes patterns for forming the first lines 122 and the second lines 132 and patterns for forming the third lines 126 and the fourth lines 136.
As shown in fig. 10A and 10B, in the method for manufacturing the coaxial via structure, the first conductive material 120M and the second conductive material 130M are patterned by the mask 160. The second conductive material 130M and the first conductive material 120M exposed from the mask 160 are successively removed until the insulating layer 140 and the dielectric layer 150 are exposed from the mask 160.
Fig. 10A, 10B, 11A, and 11B are also referred to. In the method for manufacturing the coaxial via structure, the mask 160 is finally removed, and the insulating protection layer 170 is formed. The insulating protection layer 170 has openings for connecting conductive members, such as metal bumps, bumps or solder balls (not shown).
After the above steps, the first and second lines 122 and 132 are formed separately from each other, and the first and second lines 122 and 132 are coplanar, as shown in fig. 11B. The first through hole 124 and the second line 132 are electrically insulated by the first protrusion 142 in the first groove TR 1. The first circuit 122 may include any circuit pattern as long as the first circuit 122 is electrically insulated from the second circuit 132.
Similarly, after the above steps, the third line 126 and the fourth line 136 can be formed separately from each other, and the third line 126 and the fourth line 136 are coplanar. The first through hole 124 and the fourth circuit 136 are electrically insulated by the second protrusion 144 in the second groove TR 2. The third circuit 126 may include any circuit pattern (not shown) as long as the third circuit 126 is electrically insulated from the fourth circuit 136.
Refer to fig. 11A. In this example, the second trace 132 has a width W1, and the insulating layer 140 has a width W2 where it connects with the first protrusion 142. The width W2 can be adjusted correspondingly by changing the distance between the first groove TR1 and the first through hole OP1, and the width W2 can also depend on the aperture of the first groove TR 1. Therefore, according to the required width W1, an appropriate distance between the first groove TR1 and the first through hole OP1 can be calculated in the step of forming the first groove TR 1. In this way, the width W2 can be ensured to be wide enough to reduce the risk of wire breakage of the second wire 132. The second lines 132 have a spacing I from the adjacent first lines 122. Under the requirement of specific impedance, the distance I may be determined according to the width W1 and the thickness of the second line 132 and the parameters of the dielectric layer 150, thereby improving the impedance matching effect.
In summary, since the coaxial via structure of the present disclosure has the coplanar ground line and the signal line (the first line and the second line), and the first conductive structure and the second conductive structure are electrically insulated by the insulating layer, the coaxial via structure of the present disclosure can have better electromagnetic noise shielding and impedance matching effects to improve the integrity of the high frequency signal. In addition, the coaxial via structure disclosed by the invention can reduce the number of dielectric layers so as to reduce the thickness of the coaxial via structure. Therefore, the coaxial via structure of the present disclosure can also have the technical effect of reducing the cost.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (14)
1. A coaxial via structure, comprising:
a substrate having a first surface;
a first conductive structure including a first line on the first surface and a first via penetrating the substrate;
a second conductive structure including a second line on the first surface of the substrate and a second via penetrating the substrate, the first via and the second via extending in a first direction, the first line and the second line extending in a second direction, the second direction being perpendicular to the first direction; and
and the insulating layer is positioned between the first through hole and the second through hole, wherein the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar.
2. The coaxial via structure of claim 1, wherein the first via of the first conductive structure surrounds the second via of the second conductive structure and the insulating layer.
3. The coaxial via structure of claim 1, wherein the insulating layer, the first via, and the second via are coaxial.
4. The coaxial via structure of claim 1, wherein the insulating layer has a protrusion at an end of the insulating layer proximate to the first surface.
5. The coaxial via structure of claim 4, wherein the protrusion of the insulating layer protrudes away from the second via along the second direction.
6. The coaxial via structure of claim 4, wherein the first via of the first conductive structure, the protrusion of the insulating layer, and the second line of the second conductive structure overlap in the first direction.
7. The coaxial via structure of claim 4, wherein the substrate further comprises a second surface opposite the first surface, and further comprising a dielectric layer between the first surface and the second surface, and the protrusion of the insulating layer contacts the dielectric layer.
8. A method of fabricating a coaxial via structure, comprising:
forming a first through hole in the substrate;
forming a first conductive material on the first surface of the substrate and in the first through hole;
forming a groove recessed from the first surface, and communicating the groove with the first through hole;
forming an insulating layer in the first through hole and the groove;
forming a second conductive material on the first surface of the substrate and in the first through hole; and
patterning the first conductive material and the second conductive material to form a first circuit and a second circuit on the first surface, so that the remaining first conductive material and the remaining second conductive material are electrically insulated by the insulating layer in the groove, and the first circuit and the second circuit are coplanar.
9. The method of claim 8, wherein the coaxial via structure further comprises a second surface opposite the first surface, and forming the recess further comprises:
a hole is drilled from the first surface in a first direction.
10. The method of claim 8, wherein the coaxial via structure further comprises a dielectric layer between the first surface and the second surface, and forming the recess further comprises:
such that the dielectric layer is exposed from the first conductive material.
11. The method of claim 10, wherein forming the insulating layer in the first via and the recess further comprises:
forming an insulating layer material in the first through hole and the groove, so that the insulating layer material contacts the dielectric layer; and
forming a second through hole in the insulating layer material to form the insulating layer, wherein the insulating layer is provided with a protruding part positioned in the groove.
12. The method of claim 11, wherein forming the second conductive material on the first surface of the substrate and in the first via further comprises:
forming the second conductive material in the second through hole, and enabling the first conductive material in the first through hole to surround the insulating layer and the second conductive material in the second through hole.
13. The method of claim 12, wherein forming the second conductive material on the first surface of the substrate and in the first via further comprises:
such that the insulating layer, the first conductive material in the first via, and the second conductive material in the second via are coaxial.
14. The method of claim 8, wherein patterning the first conductive material and the second conductive material to form the first line and the second line further comprises:
so that the first conductive material in the first via, the protruding portion of the insulating layer, and the second circuit overlap in the first direction.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163142994P | 2021-01-28 | 2021-01-28 | |
| US63/142,994 | 2021-01-28 |
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| CN114823619A true CN114823619A (en) | 2022-07-29 |
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| CN202111170641.8A Pending CN114828399A (en) | 2021-01-28 | 2021-10-08 | Coaxial through hole structure |
| CN202111170637.1A Pending CN114823619A (en) | 2021-01-28 | 2021-10-08 | Coaxial via structure and method of manufacturing the same |
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| US20240074054A1 (en) * | 2022-08-25 | 2024-02-29 | The Phoenix Company Of Chicago, Inc. | Impedance matched via connections in a printed circuit board |
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| US6605551B2 (en) * | 2000-12-08 | 2003-08-12 | Intel Corporation | Electrocoating process to form a dielectric layer in an organic substrate to reduce loop inductance |
| US6361348B1 (en) * | 2001-01-15 | 2002-03-26 | Tyco Electronics Corporation | Right angle, snap on coaxial electrical connector |
| JP4136924B2 (en) * | 2003-12-19 | 2008-08-20 | ヒロセ電機株式会社 | Coaxial electrical connector |
| JP4430976B2 (en) * | 2004-05-10 | 2010-03-10 | 富士通株式会社 | Wiring board and manufacturing method thereof |
| US20060044083A1 (en) * | 2004-08-27 | 2006-03-02 | Maksim Kuzmenka | Circuit board and method for producing a circuit board |
| SG135065A1 (en) * | 2006-02-20 | 2007-09-28 | Micron Technology Inc | Conductive vias having two or more elements for providing communication between traces in different substrate planes, semiconductor device assemblies including such vias, and accompanying methods |
| JP2007115771A (en) * | 2005-10-18 | 2007-05-10 | Nec System Technologies Ltd | Lsi pin |
| CN101442879B (en) * | 2007-11-20 | 2010-08-18 | 英业达股份有限公司 | Circuit board and conductivity through-hole structure thereof |
| US8273995B2 (en) * | 2008-06-27 | 2012-09-25 | Qualcomm Incorporated | Concentric vias in electronic substrate |
| TW201242178A (en) * | 2011-04-11 | 2012-10-16 | Hon Hai Prec Ind Co Ltd | Coaxial electrical connector |
| JP6241597B2 (en) * | 2013-10-07 | 2017-12-06 | 第一精工株式会社 | Coaxial electrical connector |
| TWI590735B (en) * | 2014-12-15 | 2017-07-01 | 財團法人工業技術研究院 | Signal transmission board and manufacturing method thereof |
-
2021
- 2021-10-08 CN CN202111170641.8A patent/CN114828399A/en active Pending
- 2021-10-08 TW TW110137649A patent/TWI781786B/en active
- 2021-10-08 TW TW110137648A patent/TWI804000B/en active
- 2021-10-08 CN CN202111170637.1A patent/CN114823619A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TWI781786B (en) | 2022-10-21 |
| TW202230892A (en) | 2022-08-01 |
| TW202231137A (en) | 2022-08-01 |
| TWI804000B (en) | 2023-06-01 |
| CN114828399A (en) | 2022-07-29 |
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