CN114828399A - Coaxial through hole structure - Google Patents

Coaxial through hole structure Download PDF

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Publication number
CN114828399A
CN114828399A CN202111170641.8A CN202111170641A CN114828399A CN 114828399 A CN114828399 A CN 114828399A CN 202111170641 A CN202111170641 A CN 202111170641A CN 114828399 A CN114828399 A CN 114828399A
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China
Prior art keywords
insulating layer
hole
coaxial
conductive structure
circuit
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Pending
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CN202111170641.8A
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Chinese (zh)
Inventor
王佰伟
粘恒铭
陈庆盛
林宜平
程石良
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Unimicron Technology Corp
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Unimicron Technology Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components

Abstract

The invention is a coaxial via structure. The coaxial via structure includes a substrate, a first conductive structure, a second conductive structure, and an insulating layer. The substrate has a first surface. The first conductive structure includes a first circuit on the first surface and a first via penetrating through the substrate. The second conductive structure includes a second circuit on the first surface of the substrate and a second via penetrating through the substrate. The first through hole and the second through hole extend in the first direction, the first circuit and the second circuit extend in the second direction, and the second direction is perpendicular to the first direction. The insulating layer is located between the first through hole and the second through hole. The insulating layer has a filler. The first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar. The invention has better electromagnetic noise shielding and impedance matching effects so as to improve the integrity of high-frequency signals. The overall dielectric constant of the insulating layer can be reduced by the filling material or the air holes, so that the problem of power loss caused by impedance mismatch of the through holes is reduced.

Description

Coaxial through hole structure
Technical Field
The present disclosure relates to a coaxial via structure, and more particularly, to a coaxial via structure having coplanar signal and ground lines.
Background
Most of the conventional coaxial via structures require a dielectric layer to be disposed between the ground line and the signal line of different layers by a lamination process, which requires a lot of cost. Since the inner layer wire and the outer layer wire in the via hole have different heights, an impedance mismatch problem may occur. The dielectric layer disposed between the ground line and the signal line may also generate a shielding gap, resulting in a poor electromagnetic shielding effect. In addition, since most of the pore-filling materials of the insulating layer have a high dielectric constant, the power loss problem caused by impedance mismatch is serious.
In view of the above, how to provide a coaxial via structure capable of improving impedance matching and electromagnetic shielding effects is still one of the objectives of the present industry.
Disclosure of Invention
One aspect of the present disclosure is a coaxial via structure.
In one embodiment of the present disclosure, a coaxial via structure includes a substrate, a first conductive structure, a second conductive structure, and an insulating layer. The substrate has a first surface. The first conductive structure comprises a first circuit on the first surface and a first through hole penetrating through the substrate. The second conductive structure includes a second circuit on the first surface of the substrate and a second via penetrating through the substrate. The first through hole and the second through hole extend in the first direction, the first circuit and the second circuit extend in the second direction, and the second direction is perpendicular to the first direction. The insulating layer is arranged between the first through hole and the second through hole and is provided with filling materials, wherein the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar.
In one embodiment of the present disclosure, the filler includes air.
In an embodiment of the present disclosure, the first via of the first conductive structure surrounds the second via of the second conductive structure and the insulating layer.
In one embodiment of the present disclosure, the insulating layer, the first via and the second via are coaxial.
In an embodiment of the present disclosure, the insulating layer has a protrusion located at an end of the insulating layer close to the first surface.
One aspect of the present disclosure is a coaxial via structure.
In one embodiment of the present disclosure, a coaxial via structure includes a substrate, a first conductive structure, a second conductive structure, an insulating layer, and an air via. The substrate has a first surface. The first conductive structure comprises a first circuit on the first surface and a first through hole penetrating through the substrate. The second conductive structure includes a second circuit on the first surface of the substrate and a second via penetrating through the substrate. The first through hole and the second through hole extend in the first direction, the first circuit and the second circuit extend in the second direction, and the second direction is perpendicular to the first direction. The insulating layer is arranged between the first through hole and the second through hole and is provided with filling materials, wherein the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar. The air hole is located between the first through hole and the second through hole and penetrates through the insulating layer along the first direction.
In an embodiment of the present disclosure, the air hole has an arc shape in a top view in the first direction, and the air hole surrounds the second through hole.
In an embodiment of the present disclosure, the first via of the first conductive structure surrounds the second via of the second conductive structure and the insulating layer.
In one embodiment of the present disclosure, the insulating layer, the first via and the second via are coaxial.
In an embodiment of the present disclosure, the insulating layer has a protrusion located at an end of the insulating layer close to the first surface.
In the above embodiments, since the coaxial via structure of the present disclosure has the coplanar first line and the coplanar second line, and the first conductive structure and the second conductive structure can be electrically insulated by the insulating layer, the coaxial via structure of the present disclosure can have better electromagnetic noise shielding and impedance matching effects, so as to improve the integrity of the high frequency signal. The coaxial via structure disclosed by the invention can reduce the number of dielectric layers, reduce the thickness of the coaxial via structure and reduce the cost. In addition, the dielectric constant of the insulating layer of the coaxial via structure can be reduced by the filling material or the air hole. Therefore, the power loss problem caused by the impedance mismatch of the through hole can be reduced.
Drawings
Fig. 1 is a perspective view of a coaxial via structure according to an embodiment of the present disclosure.
Fig. 2 is a cross-sectional view taken along line 2-2 of fig. 1.
Fig. 3A to 11A are top views of intermediate steps of a method for fabricating a coaxial via structure according to an embodiment of the present disclosure.
Fig. 3B to 11B are cross-sectional views taken along line 3B-3B to line 11B-11B in fig. 3A to 11A, respectively.
Fig. 12A is a bottom view of a coaxial via structure according to another embodiment of the present disclosure.
Fig. 12B is a cross-sectional view taken along line 12B-12B of fig. 12A.
FIG. 13 is a bottom view of a coaxial via structure according to another embodiment of the present disclosure.
[ description of main element symbols ]
100,100a,100b coaxial via structure 110 substrate
112 first surface 114 second surface
116 internal wiring 120 first conductive structure
120M first conductive material 122 first line
124 first via 126 third line
130 second conductive structure 130M second conductive material
132 second line 134 second through-hole
136 fourth line 140,140a,140b insulating layer
140M insulating layer material 142 first protrusion
144 second projection 146 filling
148a,148b, air holes 150, dielectric layer
160, mask 170: insulating protective layer
D1 first direction D2 second direction
OP1, first through hole OP2, second through hole
TR1 first groove TR2 second groove
A is the axis
3B-3B,4B-4B,5B-5B,6B-6B,7B-7B,8B-8B,9B-9B,10B-10B,11B-11B,12B-12B
W1, W2 width I spacing
Detailed Description
In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of the various embodiments of the present invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, for the sake of simplicity, some conventional structures and elements are shown in the drawings. And the thickness of layers and regions in the drawings may be exaggerated for clarity, and the same reference numerals denote the same elements in the description of the drawings.
Fig. 1 is a perspective view of a coaxial via structure 100 according to an embodiment of the present disclosure. Fig. 2 is a cross-sectional view taken along line 2-2 of fig. 1. Reference is also made to fig. 1 and 2. The coaxial via structure 100 includes a substrate 110, a first conductive structure 120, a second conductive structure 130, and an insulating layer 140.
The substrate 110 has a first surface 112 and a second surface 114 opposite to each other. The first conductive structure 120 includes a first line 122 and a first via 124, and the second conductive structure 130 includes a second line 132 and a second via 134. The first circuit 122 and the second circuit 132 are disposed on the first surface 112. The first via 124 and the second via 134 penetrate the substrate 110. The first through hole 124 and the second through hole 134 extend in the first direction D1. The first and second wires 122 and 132 extend in a second direction D2 perpendicular to the first direction D1. The first line 122 of the first conductive structure 120 is coplanar with the second line 132 of the second conductive structure 130. In other words, the first line 122 and the second line 132 are located on the same horizontal plane.
In the present embodiment, the first direction D1 is a vertical direction in the figure, that is, the first direction D1 is a direction from the first surface 112 to the second surface 114. The second direction D2 can be any horizontal direction perpendicular to the first direction D1, as described earlier. In the present embodiment, the first line 122 and the third line 126 may be ground lines, and the second line 132 and the fourth line 136 may be signal lines, but the disclosure is not limited thereto.
As shown in fig. 2, the first conductive structure 120 further includes a third trace 126 on the second surface 114, and the second conductive structure 130 further includes a fourth trace 136 on the second surface 114. Two ends of the first through hole 124 are respectively connected to the first line 122 and the third line 126. Both ends of the second through hole 134 are connected to the second line 132 and the fourth line 136, respectively. The third line 126 and the fourth line 136 extend in a second direction D2, and the third line 126 and the fourth line 136 are coplanar. In other words, the third line 126 and the fourth line 136 are located on the same horizontal plane.
The insulating layer 140 is located between the first via 124 and the second via 134, and the insulating layer 140 extends in the first direction D1. The first via 124 surrounds the second via 134 and the insulating layer 140, and the insulating layer 140 surrounds the second via 134. As shown in fig. 2, the insulating layer 140, the first via 124, and the second via 134 are coaxial with respect to the axis a.
The insulating layer 140 is a pore filling agent with a filler 146, and the filler 146 contains air. Since the dielectric constant value (Dk) of air is 1, the dielectric constant of the entire insulating layer 140 can be reduced by adding air. In this way, the power Loss problem (Impedance Mismatch Loss) caused by the Impedance Mismatch can be reduced.
The insulating layer 140 has a first protrusion 142, and the first protrusion 142 is located at an end of the insulating layer 140 close to the first surface 112. The first protrusion 142 protrudes away from the second through hole 134 along the second direction D2. As shown in fig. 2, the substrate 110 further includes a dielectric layer 150 between the first surface 112 and the second surface 114. In the embodiment, the substrate 110 further includes a plurality of inner lines 116 separated by dielectric layers 150, but the disclosure is not limited thereto. The first protrusion 142 of the insulating layer 140 contacts the dielectric layer 150 near the first surface 112. In other words, the first protrusion 142 extends to the dielectric layer 150 through the first via 124.
It should be understood that, in order to clearly show the structural relationship between the second line 132 and the first protrusion 142, only the first via 124, the second line 132, and the insulating layer 140 are drawn in fig. 1, and the first line 122 is omitted.
As shown in fig. 2, the first via 124 of the first conductive structure 120, the first protrusion 142 of the insulating layer 140, and the second wire 132 of the second conductive structure 130 overlap in the first direction D1. The second trace 132 of the second conductive structure 130 extends from the second via 134 and crosses the first protrusion 142. In other words, the first via 124 and the second line 132 are electrically insulated by the first protrusion 142, and the coplanar first line 122 and the coplanar second line 132 are separated from each other, thereby electrically insulating the first conductive structure 120 from the second conductive structure 130.
As can be seen from the above description, since the first circuit 122 and the second circuit 132 of the coaxial via structure 100 are coplanar and the first conductive structure 120 is electrically insulated from the second conductive structure 130, the conventional step of adding an additional dielectric layer to electrically insulate the first circuit and the second circuit located at different layers can be omitted. In this way, the first through hole 124 and the second through hole 134 of the present disclosure have substantially the same height, so that the overall structure of the coaxial through hole structure 100 is relatively symmetrical, thereby improving the impedance matching effect. In addition, since the dielectric layer between the first circuit and the second circuit at different layers can be omitted, the second via 134 is prevented from protruding out of the insulating layer. Therefore, the coaxial through hole structure can avoid the problem of poor electromagnetic shielding effect caused by the notch of the shielding structure.
As shown in fig. 2, the insulating layer 140 further has a second protrusion 144, and the second protrusion 144 is located at an end of the insulating layer 140 close to the second surface 114. The second protrusion 144 protrudes away from the second through hole 134 along the second direction D2. The second protrusion 144 of the insulating layer 140 contacts the dielectric layer 150 proximate the second surface 114. In other words, the second protrusion 144 extends to the dielectric layer 150 through the first via 124.
As shown in fig. 2, the first via 124 of the first conductive structure 120, the second protrusion 144 of the insulating layer 140, and the fourth line 136 of the second conductive structure 130 overlap in the first direction D1. The fourth trace 136 of the second conductive structure 130 extends from the second via 134 and crosses the second protrusion 144. In other words, the first via 124 and the fourth line 136 are electrically insulated by the second protrusion 144, and the third line 126 and the fourth line 136 are separated from each other, thereby electrically insulating the first conductive structure 120 from the second conductive structure 130. As mentioned above, the extending direction of the fourth wire 136 may be any horizontal direction perpendicular to the first direction D1, and fig. 2 is only an example, and the disclosure is not limited thereto.
It is to be understood that the connection, materials and functions of the elements described above will not be repeated and are described in detail. In the following description, a method of manufacturing a coaxial via structure will be described.
Figures 3A-10A are top views of intermediate steps in a method of fabricating a coaxial via structure according to an embodiment of the present disclosure. Fig. 3B to 10B are cross-sectional views taken along line 3B-3B to line 10B-10B in fig. 3A to 10B, respectively. As shown in fig. 3A and 3B, the method of manufacturing the coaxial via structure starts with forming a first through hole OP1 in the substrate 110. The first through hole OP1 penetrates through the inner circuit 116 and the dielectric layer 150 of the substrate 110. For example, the first via OP1 may be formed by laser drilling.
As shown in fig. 4A and 4B, in the manufacturing method of the coaxial via structure, a first conductive material 120M is then formed on the first surface 112, the second surface 114, and the inner wall of the first via OP 1. The first conductive material 120M is formed by electroplating, and the first conductive material 120M is copper, but the disclosure is not limited thereto, and those skilled in the art can select appropriate methods and materials according to circumstances.
As shown in fig. 5A and 5B, in the manufacturing method of the coaxial via structure, the first groove TR1 is formed next. The first groove TR1 is recessed from the first surface 112, and the first groove TR1 communicates with the first through hole OP 1. The first recess TR1 is formed by drilling a hole from the first surface 112 along the first direction D1 such that the dielectric layer 150 adjacent to the first surface 112 is exposed from the first conductive material 120M.
Referring to fig. 5B, this step further includes forming a second groove TR 2. The second groove TR2 is recessed from the second surface 114, and the second groove TR2 communicates with the first through hole OP 1. The second trench TR2 is formed by drilling a hole from the second surface 114 in a direction opposite to the first direction D1 such that the dielectric layer 150 near the second surface 114 is exposed from the first conductive material 120M. For example, the first and second grooves TR1 and TR2 may be formed by laser drilling.
In the top view of fig. 5A, the distance between the first recess TR1 and the first via OP1 can be calculated according to the width of the second circuit 132 and the required distance between the first circuit 122 and the second circuit 132. Similarly, in a bottom view (not shown), the distance between the second groove TR2 and the first through hole OP1 can be calculated according to the width of the fourth circuit 136 and the required distance between the third circuit 126 and the fourth circuit 136.
As shown in fig. 6A and 6B, in the method for manufacturing the coaxial via structure, the insulating layer material 140M is filled into the first via OP1, the first groove TR1 and the second groove TR2, and the insulating layer material 140M contacts the dielectric layer 150 exposed from the first conductive material 120M. In the present embodiment, the insulating layer material 140M may be, for example, a hole-filling ink, but the disclosure is not limited thereto. As described above, the insulating layer material 140M has the filler 146 containing air. After filling the insulating layer 140M, the exposed portions of the insulating layer 140M from the first surface 112 and the second surface 114 are polished, such that the upper surface and the lower surface of the insulating layer 140 are flush with the first conductive material 120M, respectively.
As shown in fig. 7A and 7B, in the method for fabricating the coaxial via structure, a second via OP2 is then formed in insulating layer material 140M. In this embodiment, the second through hole OP2 and the first through hole OP1 are concentric circles. For example, second via OP2 is formed by laser drilling, thereby removing a portion of insulating layer material 140M. After forming the second via OP2, the remaining insulating layer material 140M includes a portion (i.e., the insulating layer 140) located in the first via OP1 and the first protrusion 142 and the second protrusion 144 respectively located at two sides of the substrate 110.
As shown in fig. 8A and 8B, in the method for manufacturing the coaxial via structure, a second conductive material 130M is then formed on the first surface 112, the second surface 114, and the second via OP 2. The first conductive material 120M may be formed by electroplating, and the first conductive material 120M may be copper, but the disclosure is not limited thereto, and those skilled in the art can select appropriate methods and materials according to circumstances.
The second conductive material 130M is located in the second via OP2, and the first conductive material 120M (i.e., the first via 124) in the first via OP1 surrounds the insulating layer 140 and the second conductive material 130M (i.e., the second via 134) in the second via OP2, so that the insulating layer 140, the first conductive material 120M in the first via OP1, and the second conductive material 130M in the second via OP2 are coaxial with respect to the axis a.
As shown in fig. 9A and 9B, in the method for manufacturing the coaxial via structure, a mask 160 is formed on the first surface 112 and the second surface 114. The mask 160 includes patterns for forming the first lines 122 and the second lines 132 and patterns for forming the third lines 126 and the fourth lines 136.
As shown in fig. 10A and 10B, in the method for manufacturing the coaxial via structure, the first conductive material 120M and the second conductive material 130M are patterned by the mask 160. The second conductive material 130M and the first conductive material 120M exposed from the mask 160 are successively removed until the insulating layer 140 and the dielectric layer 150 are exposed from the mask 160.
Fig. 10A, 10B, 11A, and 11B are also referred to. In the method for manufacturing the coaxial via structure, the mask 160 is finally removed, and the insulating protection layer 170 is formed. The insulating protection layer 170 has openings for connecting conductive members, such as metal bumps, bumps or solder balls (not shown).
After the above steps, the first and second lines 122 and 132 are formed separately from each other, and the first and second lines 122 and 132 are coplanar, as shown in fig. 11B. The first through hole 124 and the second line 132 are electrically insulated by the first protrusion 142 in the first groove TR 1. The first circuit 122 may include any circuit pattern as long as the first circuit 122 is electrically insulated from the second circuit 132.
Similarly, after the above steps, the third circuit 126 and the fourth circuit 136 are separated from each other, and the third circuit 126 and the fourth circuit 136 are coplanar. The first through hole 124 and the fourth circuit 136 are electrically insulated by the second protrusion 144 in the second groove TR 2. The third circuit 126 may include any circuit pattern (not shown) as long as the third circuit 126 is electrically insulated from the fourth circuit 136.
Refer to fig. 11A. In this example, the second trace 132 has a width W1, and the insulating layer 140 has a width W2 where it connects with the first protrusion 142. The width W2 can be adjusted correspondingly by changing the distance between the first groove TR1 and the first through hole OP1, and the width W2 can also depend on the aperture of the first groove TR 1. Therefore, according to the required width W1, an appropriate distance between the first groove TR1 and the first through hole OP1 can be calculated in the step of forming the first groove TR 1. In this way, the width W2 can be ensured to be wide enough to reduce the risk of wire breakage of the second wire 132. The second lines 132 have a spacing I from the adjacent first lines 122. Under the requirement of a specific impedance, the distance I may be determined according to the width W1 and the thickness of the second line 132 and the parameters of the dielectric layer 150, thereby enhancing the impedance matching effect.
Fig. 12A is a bottom view of a coaxial via structure 100a according to another embodiment of the present disclosure. Fig. 12B is a cross-sectional view taken along line 12B-12B of fig. 12A. The coaxial via structure 100a is substantially the same as the coaxial via structure 100 of fig. 2, except that the insulating layer 140a of the coaxial via structure 100a does not have the filler 146 (see fig. 2), and the coaxial via structure 100a has the air hole 148 a. The air hole 148a is located between the first and second through holes 124 and 134. The air hole 148a penetrates the insulating layer 140a along the first direction D1. The first direction D1 corresponds to a direction perpendicular to the plane of the paper in fig. 12A. The air holes 148a may be formed by mechanical drilling. In the embodiment, the coaxial via structure 100a has 6 air holes 148a arranged in a manner surrounding the second via 134, but the disclosure is not limited thereto. The number and size of the air holes 148a can be adjusted according to actual requirements, as long as the insulating layer 140a has a structural supporting force sufficient to support the second through holes 134 and the second lines 132. Since the dielectric constant value (Dk) of air is 1, the dielectric constant of the entire insulating layer 140a can be lowered by the air holes 148 a. Therefore, the power loss problem caused by impedance mismatch can be reduced.
Fig. 13 is a bottom view of a coaxial via structure 100b according to another embodiment of the present disclosure. The coaxial via structure 100B is substantially the same as the coaxial via structure 100a of fig. 12A, except that the air hole 148B of the coaxial via structure 100B is arc-shaped in a top view in the first direction D1 (see fig. 12B). The first direction D1 corresponds to a direction perpendicular to the plane of the paper in fig. 13. In other words, the arc-shaped air holes 148b can be regarded as a slot made of a plurality of air holes 148a of fig. 12, and the air holes 148b can be formed by a slot milling method. In the embodiment, the coaxial via structure 100a has 3 air holes 148b, but the disclosure is not limited thereto. The number and size of the air holes 148b can be adjusted according to actual requirements, as long as the insulating layer 140b has a structural supporting force sufficient to support the second through holes 134 and the second lines 132. Since the dielectric constant value (Dk) of air is 1, the dielectric constant of the insulating layer 140b as a whole can be lowered by the air holes 148 b. Therefore, the power loss problem caused by the impedance mismatch of the through hole can be reduced.
In summary, since the coaxial via structure of the present disclosure has the coplanar ground line and the signal line (the first line and the second line), and the first conductive structure and the second conductive structure are electrically insulated by the insulating layer, the coaxial via structure of the present disclosure can have better electromagnetic noise shielding and impedance matching effects to improve the integrity of the high frequency signal. The coaxial via structure disclosed in the present disclosure can also reduce the number of dielectric layers, reduce the thickness of the coaxial via structure, and reduce the cost. In addition, the dielectric constant of the insulating layer of the coaxial via structure can be reduced by the filling material or the air hole. Therefore, the power loss problem caused by the impedance mismatch of the through hole can be reduced.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.

Claims (10)

1. A coaxial via structure, comprising:
a substrate having a first surface;
a first conductive structure including a first line on the first surface and a first via penetrating the substrate;
a second conductive structure including a second line on the first surface of the substrate and a second via penetrating the substrate, the first via and the second via extending in a first direction, the first line and the second line extending in a second direction, the second direction being perpendicular to the first direction; and
and the insulating layer is positioned between the first through hole and the second through hole, the insulating layer is provided with a filling material, the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar.
2. The coaxial via structure of claim 1, wherein the filler comprises air.
3. The coaxial via structure of claim 1, wherein the first via of the first conductive structure surrounds the second via of the second conductive structure and the insulating layer.
4. The coaxial via structure of claim 1, wherein the insulating layer, the first via, and the second via are coaxial.
5. The coaxial via structure of claim 1, wherein the insulating layer has a protrusion at an end of the insulating layer proximate to the first surface.
6. A coaxial via structure, comprising:
a substrate having a first surface;
a first conductive structure including a first line on the first surface and a first via penetrating the substrate;
a second conductive structure including a second line on the first surface of the substrate and a second via penetrating the substrate, the first via and the second via extending in a first direction, the first line and the second line extending in a second direction, the second direction being perpendicular to the first direction;
the insulating layer is positioned between the first through hole and the second through hole, wherein the first conductive structure is electrically insulated from the second conductive structure, and the first circuit and the second circuit are coplanar; and
and the air hole is positioned between the first through hole and the second through hole and penetrates through the insulating layer along the first direction.
7. The coaxial via structure of claim 6, wherein the air hole is arc-shaped in a plan view in the first direction, and the air hole surrounds the second via.
8. The coaxial via structure of claim 6, wherein the first via of the first conductive structure surrounds the second via of the second conductive structure and the insulating layer.
9. The coaxial via structure of claim 6, wherein the insulating layer, the first via, and the second via are coaxial.
10. The coaxial via structure of claim 6, wherein the insulating layer has a protrusion at an end of the insulating layer proximate to the first surface.
CN202111170641.8A 2021-01-28 2021-10-08 Coaxial through hole structure Pending CN114828399A (en)

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US202163142994P 2021-01-28 2021-01-28
US63/142,994 2021-01-28

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CN114828399A true CN114828399A (en) 2022-07-29

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TWI804000B (en) 2023-06-01

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