CN114823259A - Machine and method for processing structure - Google Patents

Abstract

The embodiment of the invention relates to a machine and a method for processing a structure. The machine for processing the structure comprises: an electron beam column, an ion beam mask, a processor, and a controller. The electron beam column may irradiate an electron beam to a workpiece to obtain an electron beam image of the workpiece, and the ion beam column may irradiate an ion beam to the workpiece to obtain an ion beam image of the workpiece and process the workpiece. The processor can identify the electron beam image and the ion beam image, calculate and obtain the position information of the workpiece, and control the relative positions of the ion beam lens barrel, the ion beam mask and the workpiece according to the position information by the controller.

Description

Machine and method for processing structure

Technical Field

The present disclosure relates to machines and methods for processing structures, and more particularly, to machines and methods for processing samples for fabricating three-dimensional atom probes.

Background

Three-dimensional Atom probes (3D-AP or APT: Atom Probe morphology) are considered the only technology that can simultaneously provide 3D images of atomic scale resolution as well as chemical composition.

The quality of the three-dimensional atom probe tip determines the quality of the experimental data, and generally, the three-dimensional atom probe tip sample must meet the following requirements: (1) the radius of the needle tip is nano-scale size; (2) the shape of the needle point must be symmetrical, so as to avoid forming an ellipse; (3) the cone angle (shape angle) of the needle tip cannot be too large; (4) the column body needs to avoid micro-cracks; and (5) no other needle tip or micro-needle tip is present within a certain distance near the needle tip. In recent years, the application of three-dimensional atom probes is largely related to the specimen fabrication technology, and the most important is the application of Focused Ion Beam (FIB).

Disclosure of Invention

In some embodiments, the present disclosure provides a machine for processing a structure, comprising: an electron beam column, an ion beam mask, a processor, and a controller. The electron beam column may irradiate an electron beam to a workpiece so as to obtain an electron beam image of the workpiece, and the ion beam column may irradiate an ion beam to the workpiece so as to obtain an ion beam image of the workpiece and process the workpiece. The ion beam mask is arranged between the ion beam lens barrel and the workpiece and can be used for blocking part of ion beams. The processor includes an image recognition module operable to recognize the electron beam image and the ion beam image, and a calculation module operable to process the electron beam image to obtain positional information of the workpiece. The controller can adjust the relative position relation among the ion beam lens barrel, the ion beam mask and the workpiece according to the position information.

In some embodiments, the present disclosure provides a method of processing a structure, comprising: irradiating a workpiece with an electron beam to obtain an electron beam image of the workpiece; recognizing, with a processor, the electron beam image to obtain positional information of the workpiece from the electron beam image; and adjusting the relative position relation among the ion beam, the ion beam mask and the workpiece by using a controller according to the position information, and processing the workpiece by using the ion beam.

In some embodiments, the present disclosure provides a machine for processing a structure, comprising: an electron beam column, an ion beam column, a processor and a controller. The electron beam column may irradiate an electron beam to a workpiece, and the ion beam column may irradiate an ion beam to the workpiece. The processor is arranged to perform the following operations: obtaining an electron beam image from the electron beam column and/or an ion beam image from the ion beam column, recognizing the electron beam image and/or the ion beam image, and performing a calculation to obtain position information of the workpiece according to the image. In addition, the controller controls and adjusts the relative position relation among the ion beam lens barrel, the ion beam mask and the workpiece according to the position information.

The foregoing has outlined rather broadly the features of the present disclosure in order that the detailed description of the disclosure that follows may be better understood. Other technical features that may form the subject of the claims of this disclosure are described below. It should be appreciated by those skilled in the art that the conception and specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes of the present disclosure. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the disclosure as set forth in the appended claims.

Drawings

Aspects of the present disclosure will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily expanded or reduced for clarity of presentation.

Fig. 1 is a schematic diagram of a machine according to an embodiment of the disclosure.

FIG. 2 is a flow chart of a method for preparing a semiconductor sample using the apparatus of FIG. 1.

Fig. 3 is an image of an ion beam obtained using the tool of fig. 1.

FIG. 4 is an electron beam image obtained using the apparatus of FIG. 1.

Fig. 5 is a schematic diagram illustrating an operation of a controller according to an embodiment of the disclosure.

FIG. 6 is a schematic diagram of an etching process performed by the apparatus shown in FIG. 1.

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, "forming a first member over or on a second member" may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members may be formed between the first member and the second member such that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Furthermore, spatially relative terms (e.g., "below," "lower," "above," "upper," and the like) may be used herein for ease of description to describe one element or component's relationship to another element(s) or component(s), as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the machine in use or operation in addition to the orientation depicted in the figures. The machine may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

As used herein, terms such as "first," "second," and "third," describe various elements, components, regions, layers, and/or sections, which should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another. Terms such as "first," "second," and "third," as used herein, do not imply a sequence or order unless clearly indicated by the context.

As used herein, the terms "substantially", "essentially" and "about" are used to describe and explain minor variations. When used in conjunction with an event or condition, the terms may refer to an instance in which the event or condition occurs precisely as well as an instance in which the event or condition occurs in close proximity. For example, when used in conjunction with numerical values, the terms can refer to a variation of less than or equal to ± 10% of the stated numerical value, such as less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%. For example, two numerical values are considered to be "substantially" the same or equal if the difference between the two numerical values is less than or equal to ± 10% (e.g., less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%) of the average of the values. For example, "substantially" parallel may refer to a range of angular variation from 0 ° of less than or equal to ± 10 °, such as less than or equal to ± 5 °, less than or equal to ± 4 °, less than or equal to ± 3 °, less than or equal to ± 2 °, less than or equal to ± 1 °, less than or equal to ± 0.5 °, less than or equal to ± 0.1 °, or less than or equal to ± 0.05 °. For example, "substantially" perpendicular may refer to a range of angular variation from 90 ° of less than or equal to ± 10 °, such as less than or equal to ± 5 °, less than or equal to ± 4 °, less than or equal to ± 3 °, less than or equal to ± 2 °, less than or equal to ± 1 °, less than or equal to ± 0.5 °, less than or equal to ± 0.1 °, or less than or equal to ± 0.05 °.

Atom Probe Tomography (Atom Probe tomogry or three-dimensional Atom Probe) is the only material analysis technique capable of three-dimensional mapping and chemical composition measurement (depth resolution about 0.1-0.3 nm, lateral 0.3-0.5 nm) on atomic scale, and is currently widely used in the semiconductor industry. With current technology, focused ion beams are often used to prepare samples for three-dimensional atom probes. FIB (focused ion beam) instruments use a well focused ion beam to process and take pictures of a sample. FIB mainly takes very precise sample cross-sections or performs circuit modifications after imaging by Electron beams such as SEM (Scanning Electron Microscopy), STEM (Scanning Transmission Electron Microscopy) and TEM (Transmission Electron Microscopy). In addition, the FIB itself can also detect the ion beam image. The contrast mechanism of FIB differs from SEM and S/TEM, so that unique structural information can be obtained in some cases. Dual Beam (Dual Beam) is a tool combining the two FIB/SEM techniques, with the FIB preparing the sample and using SEM, TEM or STEM instruments to obtain an electron image, whereas Single Beam (Single Beam) FIBs have only one ion Beam source.

Fig. 1 is a schematic diagram illustrating a structure of a machine 1 for processing a structure according to an embodiment of the disclosure. In certain embodiments, stage 1 relates to a Dual-Beam Focused Ion Beam microscope (DB-FIB). "Dual beam" refers to tools that include "ion beams" and "electron beams". The electron beam is a scanning electron microscope, and the ion beam is accelerated by an electric field and focused by an electrostatic lens (electrostatic), so that a specific pattern is processed by physically colliding high-energy (high-speed) Ga +. The double-beam type focused ion beam microscope can use the electron beam to search the target area and observe the image, and the ion beam can precisely cut the target area without damaging other sample structures, so that the nano-scale precise position positioning and cutting and the nano-scale TEM sample slice manufacturing can be performed. In particular, the atom probe requires a sample in the shape of a tip with a tip size of, for example, about 10 to 100nm, which is generally processed by treatment using an ion beam, and finally processed into a tip sample having a size of about 100nm or less.

In some embodiments, the machine 1 includes an ion beam column 10, an electron beam column 20, and an ion beam mask 15. When a workpiece 5 to be made into a sample is placed in the machine 1, the ion beam column 10 is disposed substantially at the top of the workpiece 5, the electron beam column is disposed substantially at the side of the workpiece 5, and the ion beam mask 15 is disposed substantially between the ion beam column 10 and the workpiece 5. The ion beam column 10 may irradiate the workpiece 5 with the ion beam 11 to obtain an ion beam image of the workpiece 5, which is a top view substantially showing the workpiece 5 (see fig. 3). Further, the ion beam column 10 may also irradiate the workpiece 5 with the ion beam 11 to process the workpiece 5, such as etching or depositing the workpiece 5; when the ion beam column 10 irradiates the workpiece 5 with the ion beam 11 to process the workpiece 5, an ion beam mask 15 may be provided between the ion beam column 10 and the workpiece 5, so that the ion beam 11 is emitted from the ion beam column 10, passes through the ion beam mask 15, and is irradiated onto the workpiece 5; the ion beam mask 15 may shield a part of the ion beam 11 so that some parts of the workpiece 5 are not irradiated with the ion beam 11; selectively irradiating portions of the workpiece 5 with an ion beam mask 15; for example, a part of the workpiece 5 does not need to be irradiated with the ion beam 11 at the time of ion beam irradiation processing, and the user can shield the ion beam 11 to be irradiated to the part of the workpiece 5 by using the ion beam mask 15. Further, the electron beam column 20 may irradiate the workpiece 5 with the electron beam 21 to obtain an electron beam image of the workpiece 5, which substantially represents a side sectional view of the workpiece 5 (see fig. 4). In some embodiments, the tool 1 may observe the workpiece in situ (in-situ) using the ion beam column 10 and/or the electron beam column 20, and process the workpiece 5 using the ion beam column 10.

However, in some cases, when the workpiece 5 is placed in the machine 1, the ion beam mask 15 may not be aligned with the workpiece 5, and if the ion beam 11 is irradiated to the workpiece 5 for processing by using the ion beam column 10 in a state where the ion beam mask 15 and the workpiece 5 are not aligned with each other, the ion beam 11 cannot be accurately irradiated to a portion to be processed of the workpiece 5, and thus the workpiece 5 cannot be made into a sample for performing the atomic probe technique analysis, and in particular, the ion beam 11 may be irradiated to and damage an object to be measured in the workpiece 5.

When the ion beam mask 15 is misaligned with the workpiece 5, both may be manually corrected. The user estimates the deviation distance between the ion beam mask 15 and the workpiece 5 by manually observing the electron beam image, and then manually changes the relative position between the ion beam mask 15 and the workpiece 5 to align the ion beam mask 15 and the workpiece 5 with each other. However, manually aligning the ion beam mask 15 with the workpiece 5 is not only time consuming, but it is not easy to achieve a good alignment.

In some embodiments, the present disclosure provides an automated processing tool and method. The machine 1 further includes a processor 30 and a controller 40, wherein the processor 30 is electrically connected to the ion beam column 10 and the electron beam column 20, and the controller 40 is electrically connected to the processor 30 and the ion beam mask 15. In certain embodiments, the processor 30 has an image recognition module 31 and a calculation module 33. When the ion beam column 10 irradiates the workpiece 5 with the ion beam 11 to obtain an ion beam image of the workpiece 5 and the electron beam column 20 irradiates the workpiece 5 with the electron beam 21 to obtain an electron beam image of the workpiece 5, the processor 30 may receive the ion beam image and the electron beam image at the same time. Further, the image recognition module 31 of the processor 30 may process the ion beam image and the electron beam image, and in some embodiments, the image recognition module 31 may further adjust a gray level of the ion beam image so that the workpiece 5 may be more clearly represented in the ion beam image.

The calculation module 33 can monitor the electron beam image in situ (in-situ) and further calculate the deviation distance between the current positions of the workpiece 5 and the ion beam mask 15 from each other by using other parameters and the monitoring values, i.e., the calculation module 33 can monitor and calculate the electron beam image to obtain the position information of the workpiece 5, and from the position information, it can know how to perform the calibration and alignment of the ion beam mask 15 and the workpiece 5. As described above, the ion beam 11 emitted from the ion beam column 10 is irradiated onto the workpiece 5 through the ion beam mask 15 to perform etching or deposition processing on the workpiece 5; if the workpiece 5 is not aligned with the ion beam mask 15, the ion beam 11 may irradiate portions of the workpiece 5 that are not to be irradiated, and thus may damage the target object to be measured in the workpiece 5. Therefore, the calculation module 33 of the present disclosure can identify and calculate the distance of the actual deviation between the workpiece 5 and the ion beam mask 15 from the electron beam image, so as to further provide information for correcting the positional relationship between the workpiece 5 and the ion beam mask 15.

Furthermore, the calculation module 33 can recognize the operation mode through the sample training machine. Such as deriving a complex function (or sample) from the electron beam image data to learn to create an algorithm (or set of rules) and use it to derive the distance of the actual deviation between the workpiece 5 and the ion beam mask 15.

Further, in certain embodiments, the processor 30 may have a stored database that may store data of processing samples, which may provide a reference to the processing of the sample by the user using the ion beam 11.

The controller 40 may obtain the position information of the workpiece 5 from the calculation module 33 of the processor 30, that is, the controller 40 may obtain the distance of the actual deviation between the workpiece 5 and the ion beam mask 15 from the calculation module 33 of the processor 30, and further adjust the relative positional relationship between the ion beam mask 15 and the workpiece 5 to correct the ion beam mask 15 and the workpiece 5 so that the ion beam mask 15 and the workpiece 5 may be aligned with each other based on the position information of the workpiece 5. After the positional relationship between the ion beam mask 15 and the workpiece 5 is corrected, the ion beam column 10 can accurately irradiate the ion beam 11 to the portion of the workpiece 5 to be irradiated when the workpiece 5 is etched or deposited. The workpiece 5 is irradiated with the ion beam 11, so that the target object to be tested in the workpiece 5 is processed to be in a state capable of being tested, and the processed workpiece 5 becomes a sample capable of performing three-dimensional atom probe analysis.

Fig. 2 is a flowchart of a method 6 for preparing a semiconductor sample using the apparatus 1 of fig. 1. In operation 61 of the method flowchart, a workpiece 5 including an object to be measured is placed in the machine 1.

In operation 62 of the method flowchart, the workpiece 5 is irradiated with the ion beam 11 by the ion beam column 10 to obtain an ion beam image, which may substantially reveal a top view of the workpiece 5; the electron beam column 20 irradiates the workpiece 5 with the electron beam 21 to obtain an electron beam image, which can substantially show a side cross-sectional view of the workpiece 5, and since the cross-section of the workpiece 5 can be represented in the electron beam image, the target object to be measured included in the workpiece 5 can also be seen in the electron beam image.

In operation 63 of the method flowchart, an ion beam image of the workpiece 5 taken from the ion beam column 10 and an electron beam image of the workpiece 5 taken from the electron beam column 20 may be transmitted from the ion beam column 10 and the electron beam column 20 to the processor 30.

After the processor 30 obtains the ion beam image of the workpiece 5 from the ion beam column 10 in operation 64 of the method flowchart, the image recognition module 31 of the processor 30 may further process and recognize the ion beam image so that the ion beam image may clearly present the top view image of the workpiece 5 obtained thereby. As previously described, the ion beam image may substantially reveal a top view of the workpiece 5. With further reference to fig. 3, the ion beam image received directly from the ion beam column 10 does not clearly present a top view of the workpiece 5 (see (a) of fig. 3); the image recognition module 31 of the processor 30 may further process the ion beam image, such as adjusting a gray level of the ion beam image to enhance the contrast between the workpiece 5 and the surrounding environment in the ion beam image, so that the processed ion beam image can clearly show the top view of the workpiece 5 (see (B) of fig. 3).

In operation 65 of the method flowchart, the calculation module 33 of the processor 30 obtains position information of the workpiece 5 by the electron beam image calculation. With further reference to fig. 4, as described above, the electron beam image may visualize a side cross-sectional view of the workpiece 5, and the target object 51 to be measured included in the workpiece 5 may be seen in the electron beam image. In some embodiments, as shown in fig. 4, the calculation module 33 may provide a scale 331 for the electron beam image, and the scale 331 may measure a dimension of the target 51 to be measured in the workpiece 5 to be offset from the center line L of the ion beam mask 15 (if the target 51 to be measured in the workpiece 5 is aligned with the center line L of the ion beam mask 15, this represents that the workpiece 5 and the ion beam mask 15 are accurately positioned). The calculation module 33 further uses the pixel information of the electron beam as a parameter, and calculates the measured dimension information and the pixel information of the electron beam by using an algorithm to obtain a distance z that the target 51 to be measured actually deviates from the center line L of the ion beam mask 15, so as to obtain information for correcting the relative position between the ion beam mask 15 and the workpiece 5. In some embodiments, the calculation module 33 has a simulator and compiler that can convert the electron beam pixel information to a scale measured using a scale, so that the calculation module 33 automatically obtains information for correcting the relative position of the ion beam mask 15 and the workpiece 5 to each other.

In addition, as shown in fig. 4, the electron beam image can show a side cross-sectional view of the workpiece 5, so that the aspect ratio (aspect ratio) of the precursor material layer (precursor clamping) of the workpiece 5 can be observed from the electron beam image; when the aspect ratio of the precursor material layer of the workpiece 5 is maintained to be greater than 2, the generation of curtain effect (curvature effect) can be reduced during processing the workpiece 5, and the yield of the manufactured sample can be increased.

In operation 66 of the method flowchart, after the processor 30 knows the actual offset z of the target 51, the controller 40 can further control and adjust the relative positions of the ion beam mask 15 and the workpiece 5 according to the information of the offset z, so as to correct the ion beam mask 15 and the workpiece 5 to achieve the accurate processing position. Referring further to fig. 5, the controller 40 is illustrated as controlling and adjusting the position relationship between the workpiece 5 and the ion beam mask 15 by using an ion beam image, wherein reference numeral 15 in fig. 5 represents a virtual image of the ion beam mask. Referring to fig. 5 (a), the ion beam mask 15 and the workpiece 5 are aligned with each other by a deviation distance z. The controller 40 may further adjust the positional relationship between the ion beam mask 15 and the workpiece 5 according to the information of the deviation distance z between the target 51 of the workpiece 5 to be measured and the center line L of the ion beam mask 15 obtained by the calculation module 33, so as to eliminate the deviation distance z. In some embodiments, the controller 40 may move the ion beam mask 15 according to the information to correct the relative position of the ion beam mask 15 and the workpiece 5 to each other so that the workpiece 5 may be located at a position that can be accurately processed (as shown in (B)).

In operation 67 of the method flowchart, the ion beam column 10 may irradiate the ion beam 11 to the workpiece 5 for etching or deposition processing after the controller 40 corrects the positional relationship between the ion beam mask 15 and the workpiece 5. Referring further to fig. 6, after the positional relationship between the ion beam mask 15 and the target 51 of the workpiece 5 is adjusted and corrected by the controller 40, the ion beam column 10 irradiates the ion beam 11 onto the workpiece 5 for processing. Referring to fig. 6, the ion beam 11 is emitted from the ion beam column 10 and is irradiated onto the workpiece 5 through the ion beam mask 15, the ion beam mask 15 can shield the ion beam 11 that will be irradiated onto the object 51 to be measured, so that the ion beam 11 is irradiated onto only other parts of the object 51 to be measured on the workpiece 5, so that the ion beam 11 can only remove the other parts without being irradiated onto the object 51 to be measured and without damaging the object 51 to be measured, so that the object 51 to be measured can be finally exposed to reach a state that can be tested, and finally the workpiece 5 can be processed into a sample that can be analyzed by a three-dimensional atom probe, and the processed workpiece 5 can continue to be analyzed by the three-dimensional atom probe.

In addition, as mentioned above, the electron beam image can observe the aspect ratio of the precursor material layer of the workpiece 5, and when the aspect ratio of the precursor material layer of the workpiece 5 is maintained at a value greater than about 2, the generation of curtain effect can be reduced during processing the workpiece 5, and the yield of the manufactured sample can be increased; therefore, when the workpiece 5 is processed by using the ion beam 11, the irradiation processing of the ion beam 11 can be adjusted according to the electron beam image so as to keep the height-to-width ratio of the precursor material layer of the workpiece 5 larger than a value of about 2; in some embodiments, the processor 30 may automatically adjust the irradiation process of the ion beam 11.

The machine 1 of the present disclosure is used for processing and manufacturing an atom probe sample, so as to automatically and real-timely process a workpiece 5 including a workpiece sample 51 to be tested, and the processor 30 and the controller 40 of the machine 1 can confirm the relative position between the workpiece 5 and the ion beam mask 15 in real time, correct the relative position between the workpiece 5 and the ion beam mask 15, and automatically process the workpiece 5 by the ion beam 11; therefore, the time for manufacturing the atom probe sample can be saved, and the qualification rate of the atom probe sample can be improved.

The foregoing has outlined features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein.

Description of the symbols

1 machine table

10 ion beam lens barrel

11 ion beam

15 ion beam mask

20 electron beam column

21 electron beam

30 processor

31 image identification module

33 calculation module

331 proportion scale

40 controller

5 workpiece

51 target object to be measured

61 Process

62 method

63 method

64 method

65 method

66 method

67 method.

Claims (10)

1. A machine for processing a structure, comprising:

an electron beam column arranged to irradiate a workpiece with an electron beam to obtain an electron beam image of the workpiece;

an ion beam column arranged to irradiate the workpiece with an ion beam to obtain an ion beam image of the workpiece and process the workpiece;

an ion beam mask disposed between the ion beam column and the workpiece;

a processor connected with the electron beam column and the ion beam column, wherein the processor comprises:

an image recognition module for recognizing the electron beam image and the ion beam image; and

a calculation module for processing the electron beam image to obtain position information of the workpiece; and

and the controller is connected with the processor and adjusts the relative position relation among the ion beam lens barrel, the ion beam mask and the workpiece according to the position information.

2. The tool of claim 1, wherein the image recognition module is arranged to further process the ion beam image.

3. The tool of claim 2, wherein the image recognition module is arranged to adjust a gray scale value of the ion beam image.

4. The machine of claim 1, wherein the calculation module is arranged to compare measurement information of the electron beam image and pixel information of the electron beam image to obtain the position information of the workpiece.

5. Machine station according to claim 4, wherein the calculation module is arranged to further generate a scale in the electron beam image to measure the measurement information of the electron beam image.

6. The machine station of claim 1, wherein the electron beam column is disposed corresponding to a side of the workpiece and the ion beam column is disposed corresponding to a top of the workpiece.

7. A method to process a structure, comprising:

irradiating a workpiece with an electron beam to obtain an electron beam image of the workpiece;

recognizing, with a processor, the electron beam image to obtain positional information of the workpiece from the electron beam image; and

and adjusting the relative position relation among the ion beam, the ion beam mask and the workpiece by using a controller according to the position information, and processing the workpiece by using the ion beam.

8. The method of claim 7, further comprising comparing measurement information of the electron beam image and pixel information of the electron beam image in real time to obtain the position information of the workpiece.

9. The method of claim 7, wherein processing the workpiece with the ion beam comprises irradiating the workpiece with the ion beam for an etching process.

10. A machine for processing a structure, comprising:

an electron beam column arranged to irradiate a workpiece with an electron beam;

an ion beam column arranged to irradiate the workpiece with an ion beam;

a processor arranged to perform the operations of:

obtaining an electron beam image from the electron beam column and/or an ion beam image from the ion beam column;

identifying the electron beam image and/or the ion beam image; and

calculating according to the electron beam image and/or the ion beam image to obtain the position information of the workpiece; and

and the controller controls and adjusts the relative position relation among the ion beam lens barrel, the ion beam mask and the workpiece according to the position information.

Images