TW202229855A - Apparatus and method for processing a structure - Google Patents

Abstract

An apparatus for processing a structure, which comprises: an electron beam column, a focused ion beam (FIB) column, a FIB mask, a processor and a controller. The electron beam column is configured to irradiate a workpiece with an electron beam so as to obtain an electron beam image. The FIB column is configured to irradiate the workpiece with an ion beam so as to obtain an ion beam image or to process the workpiece. The processor is used to recognize the electron beam image and the ion beam image and to compute a position information of the workpiece. The controller is used to control the relative position among the FIB column, the FIB mask and the workpiece.

Description

Machine and method for machining a structure

The present disclosure relates to a machine and method for processing a structure, and more particularly, to a machine and method for processing a sample of a three-dimensional atom probe.

Three-dimensional Atom Probe (3D-AP or APT: Atom Probe Tomography) is regarded as the only technology that can simultaneously provide 3D images with atomic-level resolution and chemical composition.

The quality of the 3D atom probe tip determines the quality of the experimental data. Generally speaking, the 3D atom probe tip sample must meet the following requirements: (1) the tip radius is nanoscale; (2) the shape of the tip must be symmetrical to avoid forming (3) The shape angle of the needle tip should not be too large; (4) The cylinder body must avoid micro-cracks; and (5) No other needle points or micro-needle points should appear within a certain distance near the needle tip. In recent years, a large number of applications of three-dimensional atom probes are closely related to the test piece fabrication technology, the most important of which is the application of focused ion beam (FIB).

In some embodiments, the present disclosure provides a machine tool for processing a structure, which includes: an electron beam column, an ion beam column, an ion beam mask, a processor, and a controller. The electron beam column can irradiate an electron beam to a workpiece to obtain an electron beam image of the workpiece, and the ion beam column can irradiate an ion beam to the workpiece to obtain an ion beam image of the workpiece, and The workpiece can be machined. The ion beam shield is arranged between the ion beam column and the workpiece, and can be used to block part of the ion beam. The processor includes an image recognition module and an operation module, the image recognition module can be used to recognize the electron beam image and the ion beam image, and the operation module can be used to process the electron beam image to obtain one of the workpieces location information. The controller can adjust the relative positional relationship among the ion beam barrel, the ion beam shield and the workpiece according to the position information.

In some embodiments, the present disclosure provides a method of processing a structure, comprising: irradiating an electron beam on a workpiece to obtain an electron beam image of the workpiece; identifying the electron beam image by a processor A position information of the workpiece is obtained from the electron beam image; and a controller is used to adjust the relative positional relationship between an ion beam, an ion beam mask and the workpiece according to the position information, and use the ion beam to pair The workpiece is processed.

In some embodiments, the present disclosure provides a machine tool for processing a structure, which includes: an electron beam column, an ion beam column, a processor, and a controller. The electron beam column can irradiate an electron beam to a workpiece, and the ion beam column can irradiate an ion beam to the workpiece. The processor is configured to perform the following operations: obtaining an electron beam image from the electron beam column and/or obtaining an ion beam image from the ion beam column, identifying the electron beam image and/or the ion beam image and relying on The images are computed to obtain a positional information of the workpiece. In addition, the controller controls the relative positional relationship among the ion beam barrel, an ion beam mask and the workpiece according to the position information.

The foregoing has outlined rather broadly the technical features of the present disclosure in order to provide a better understanding of the detailed description of the present disclosure that follows. Other technical features constituting the subject matter of the scope of the present disclosure will be described below. It should be understood by those skilled in the art to which the present disclosure pertains that the concepts and specific embodiments disclosed below can be readily utilized as modifications or designs of other structures or processes to achieve the same purposes of the present disclosure. Those skilled in the art to which the present disclosure pertains should also understand that such equivalent constructions cannot depart from the spirit and scope of the present disclosure as defined by the appended claims.

The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description, "forming a first member over a second member or on a second member" may include embodiments in which the first member and the second member are formed in direct contact, and may also Embodiments are included in which additional members may be formed between the first member and the second member such that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is intended for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

Furthermore, for convenience of description, spatially relative terms (such as "below," "below," "under," "over," "on," "above," and the like may be used herein to describe an element or component relationship to another element(s) or components as depicted in the figures. In addition to the orientation depicted in the figures, spatially relative terms are also intended to encompass different orientations of the machine in use or operation. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may also be interpreted accordingly.

As used herein, terms such as "first", "second", and "third" describe various elements, components, regions, layers and/or sections, such elements, components, regions, layers and/or Sections should not be limited by these terms. These terms may only be used to distinguish an element, component, region, layer or section from one another. Terms such as "first," "second," and "third," when used herein do not imply a sequence or order unless the context clearly dictates otherwise.

As used herein, the terms "substantially," "substantially," "substantially," and "about" are used to describe and explain small variations. When used in conjunction with an event or circumstance, terms can refer to both the exact instance in which the event or circumstance occurs and the instance in which the event or circumstance occurs very closely. For example, when used in conjunction with a numerical value, the term can relate to a range of variation less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±3% Equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if a difference between two values is less than or equal to ±10% of the mean of one of the values (such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±3%, less than or equal to equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%), then such values may be considered "substantially" the same or equal . For example, "substantially" parallel may refer to an angular variation of less than or equal to ±10° relative to 0°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±3° ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, "substantially" vertical may refer to an angular variation of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±3° ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

Atom Probe Tomography (Atom Probe Tomography or 3D Atom Probe) is the only material analysis capable of 3D mapping and chemical composition measurements at the atomic scale (depth resolution about 0.1-0.3 nm, lateral 0.3-0.5 nm) technology is currently widely used in the semiconductor industry. With current technology, a focused ion beam is often used to prepare samples for three-dimensional atom probes. FIB (Focused Ion Beam) instruments use a well-focused ion beam to process and image the sample. FIB is mainly used to obtain very accurate sample cross-sections or perform circuit modification after imaging by electron beams such as SEM (Scanning Electron Microscopy), STEM (Scanning Transmission Electron Microscope) and TEM (Transmission Electron Microscopy). In addition, the FIB itself can also detect ion beam images. The contrast mechanism of FIB is different from that of SEM and S/TEM, so that in some cases unique structural information can be obtained. Dual Beam is a combination of FIB/SEM technology into one tool, using FIB to prepare samples and obtain electron images using SEM, TEM or STEM instruments, while Single Beam's FIB is only one ion beam source.

FIG. 1 is a schematic diagram of a structure of a machine 1 for processing a structure according to an embodiment of the present disclosure. In some embodiments, Machine 1 is related to a Dual-Beam Focused Ion Beam (DB-FIB) microscope. "Dual beam type" means that the machine includes "ion beam" and "electron beam". The electron beam is a scanning electron microscope, and the ion beam is accelerated by an electric field and focused by an electrostatic lens, and the high-energy (high-speed) Ga+ is physically collided to process a specific pattern. The dual-beam focused ion beam microscope can use the electron beam to find the target area and observe the image, and the ion beam can precisely cut the target area without destroying other sample structures. The meter-scale TEM specimen thin slices are produced. In particular, the atom probe requires the sample to be in the shape of a tip, and the tip size is, for example, about 10-100 nm, which is usually processed by using an ion beam, and finally processed into a tip sample with a size of about 100 nm or less.

In some embodiments, the machine 1 is provided with an ion beam column 10 , an electron beam column 20 and an ion beam mask 15 . When the workpiece 5 to be made into a sample is placed in the machine 1, the ion beam column 10 is arranged approximately on the top of the workpiece 5, the electron beam column is approximately arranged on the side of the workpiece 5, and the ion beam shield The series 15 is arranged approximately between the ion beam column 10 and the workpiece 5 . The ion beam column 10 can irradiate the workpiece 5 with the ion beam 11 to obtain an ion beam image of the workpiece 5 , the ion beam image generally representing a top view of the workpiece 5 (see FIG. 3 ). In addition, the ion beam column 10 can also irradiate the workpiece 5 with the ion beam 11 to process the workpiece 5 , such as etching or depositing the workpiece 5 ; During processing, an ion beam shield 15 can be provided between the ion beam barrel 10 and the workpiece 5, so that the ion beam 11 is emitted from the ion beam barrel 10, and then irradiated on the workpiece 5 through the ion beam shield 15; The beam mask 15 can block part of the ion beam 11, so that some parts of the workpiece 5 are not irradiated by the ion beam 11; using the ion beam mask 15, some parts of the workpiece 5 can be selectively irradiated; for example, the workpiece A certain part of the workpiece 5 does not need to be irradiated by the ion beam 11 during the ion beam irradiation process, and the user can use the ion beam shield 15 to block the ion beam 11 that will be irradiated to this part of the workpiece 5 . Furthermore, the electron beam barrel 20 can irradiate the workpiece 5 with the electron beam 21 to obtain an electron beam image of the workpiece 5 , and the electron beam image roughly presents a side cross-sectional view of the workpiece 5 (see FIG. 4 ). In some embodiments, the machine 1 can use the ion beam column 10 and/or the electron beam column 20 to observe the workpiece in-situ, and use the ion beam column 10 to process the workpiece 5 .

However, in some cases, when the workpiece 5 is placed in the table 1, the ion beam shield 15 may not be aligned with the workpiece 5, and it is used if the ion beam shield 15 and the workpiece 5 are not aligned with each other. The ion beam column 10 irradiates the workpiece 5 with the ion beam 11 for processing, and the ion beam 11 cannot be accurately irradiated on the part to be processed of the workpiece 5, so the workpiece 5 cannot be made for analysis by an atom probe technique The sample, in particular, the ion beam 11 may irradiate and damage the object to be measured in the workpiece 5 .

When the ion beam mask 15 is not aligned with the workpiece 5, the two can be corrected manually. The user estimates the deviation distance between the ion beam shield 15 and the workpiece 5 by manually observing the electron beam image, and then changes the relative position between the ion beam shield 15 and the workpiece 5 by manual operation, so that the ion beam shields The cover 15 and the workpiece 5 are brought into alignment with each other. Of course, manually aligning the ion beam mask 15 and the workpiece 5 is time-consuming and difficult to achieve good alignment.

In some embodiments, the present disclosure provides an automated processing machine and method. The machine 1 is further provided with a processor 30 and a controller 40 , the processor 30 is electrically connected to the ion beam column 10 and the electron beam column 20 , and the controller 40 is electrically connected to the processing 30 and the ion beam shield 15 . In some embodiments, the processor 30 has an image recognition module 31 and an operation module 33 . When the ion beam column 10 irradiates the ion beam 11 to the workpiece 5 to obtain the ion beam image of the workpiece 5 and the electron beam column 20 irradiates the electron beam 21 to the workpiece 5 to obtain the electron beam image of the workpiece 5, the processor 30 can simultaneously receive the ion beam image and the electron beam image. Further, the image recognition module 31 of the processor 30 can process the ion beam image and the electron beam image. In some embodiments, the image recognition module 31 can further adjust the grayscale value of the ion beam image to make the workpiece 5 can be more clearly presented in the ion beam image.

The computing module 33 can perform in-situ monitoring of the electron beam image, and use other parameters and the measured value to further compute to obtain that the current positions of the workpiece 5 and the ion beam mask 15 are aligned with each other The deviation distance, that is, the calculation module 33 can obtain a position information of the workpiece 5 by measuring and calculating the electron beam image, and from the position information, it is possible to know how to perform the calibration and alignment of the ion beam mask 15 and the workpiece 5 Work. As described above, the ion beam 11 emitted from the ion beam barrel 10 is irradiated onto the workpiece 5 through the ion beam shield 15 to perform etching or deposition processing on the workpiece 5; if the workpiece 5 is not aligned with the ion beam shield 15, Then, the ion beam 11 may irradiate the part of the workpiece 5 that does not need to be irradiated, which may damage the object to be measured in the workpiece 5 . Therefore, the computing module 33 of the present disclosure can recognize and calculate the actual deviation distance between the workpiece 5 and the ion beam mask 15 from the electron beam image, which can further provide for the correction between the workpiece 5 and the ion beam mask 15 . Location relationship information.

Furthermore, the computing module 33 can train the machine to recognize the operation mode through the samples. A complex function (or sample) is learned from electron beam image data to create an algorithm (or set of rules) and use it to obtain the actual offset distance between workpiece 5 and ion beam mask 15 .

Also, in some embodiments, the processor 30 may have a storage database, which may store data of processed samples, which may provide a reference for the user to process the samples using the ion beam 11 .

The controller 40 can obtain the position information of the workpiece 5 from the operation module 33 of the processor 30 , that is, the controller 40 can obtain the actual deviation distance between the workpiece 5 and the ion beam mask 15 from the operation module 33 of the processor 30 . , and further adjust the relative positional relationship between the ion beam shield 15 and the workpiece 5 based on the position information of the workpiece 5 to correct the ion beam shield 15 and the workpiece 5 so that the ion beam shield 15 and the workpiece 5 can be aligned with each other. After the positional relationship between the ion beam mask 15 and the workpiece 5 is corrected, the ion beam 11 can be accurately irradiated to the part of the workpiece 5 to be irradiated when the ion beam column 10 performs etching or deposition processing on the workpiece 5 . The workpiece 5 is irradiated and processed by the ion beam 11 , so that the object to be measured in the workpiece 5 can be processed to be in a testable state, and the processed workpiece 5 can be a sample for 3D atom probe analysis.

FIG. 2 is a flowchart of a method 6 for preparing semiconductor samples using the machine 1 of FIG. 1 . In operation step 61 of the method flowchart, a workpiece 5 containing an object to be measured is placed in the machine table 1 .

In operation step 62 of the method flow chart, the workpiece 5 is irradiated with the ion beam 11 by the ion beam column 10 to obtain an ion beam image which can roughly show the top view of the workpiece 5; The workpiece 5 is irradiated with the electron beam 21 to obtain an electron beam image. The electron beam image can roughly show the side cross-sectional view of the workpiece 5. Since the cross-section of the workpiece 5 can be presented in the electron beam image, it is included in the workpiece 5 to be tested. The target is also visible in the electron beam image.

In operation step 63 of the method flow chart, the ion beam image of workpiece 5 obtained from ion beam column 10 and the electron beam image of workpiece 5 obtained from electron beam column 20 can be obtained from ion beam column 10 and the electron beam mirror Cartridge 20 is passed to processor 30 .

In operation step 64 of the method flowchart, after the processor 30 obtains the ion beam image of the workpiece 5 from the ion beam column 10, the image recognition module 31 of the processor 30 can further process and recognize the ion beam image, so that the ion beam image is further processed and recognized by the image recognition module 31 of the processor 30. The ion beam image can clearly present the top view image of the workpiece 5 obtained by the ion beam image. As previously described, the ion beam image can roughly represent a top view of the workpiece 5 . Further referring to FIG. 3 , the ion beam image directly received from the ion beam column 10 cannot clearly present the top view of the workpiece 5 (see (A) of FIG. 3 ); and the image recognition module 31 of the processor 30 can further After processing the ion beam image, for example, adjusting the gray scale value of the ion beam image to enhance the contrast between the workpiece 5 in the ion beam image and the surrounding environment, the processed ion beam image can make the top view of the workpiece 5 clearly presented (refer to FIG. 3 ). of (B)).

In the operation step 65 of the method flowchart, the operation module 33 of the processor 30 obtains a position information of the workpiece 5 through the electron beam image operation. Further referring to FIG. 4 , as described above, the electron beam image can reveal a side cross-sectional view of the workpiece 5 , and the object to be measured 51 contained in the workpiece 5 can be seen in the electron beam image. In some embodiments, as shown in FIG. 4 , the computing module 33 can provide a scale 331 for the electron beam image, and the object 51 to be measured in the workpiece 5 can be measured to offset the ion beam mask by the scale 331 The dimension of a center line L of 15 (if the object 51 to be measured in the workpiece 5 can be aligned with the center line L of the ion beam mask 15, it means that the workpiece 5 and the ion beam mask 15 achieve an accurate positioning). The operation module 33 further uses the pixel information of the electron beam as a parameter, and uses an algorithm to calculate the measured scale information and the electron beam pixel information to obtain that the object to be measured 51 actually shifts the ion beam The distance z of the center line L of the mask 15, that is, the information of the relative position of the corrected ion beam mask 15 and the workpiece 5 can be obtained. In some embodiments, the computing module 33 has a simulator and a compiler, which can convert the pixel information of the electron beam with the scale measured by using the scale, so that the computing module 33 can automatically obtain the corrected ion beam shielding Information on the relative positions of the cover 15 and the workpiece 5 to each other.

In addition, as shown in FIG. 4, the electron beam image can show the side cross-sectional view of the workpiece 5, so the aspect ratio of the precursor material layer (precursor capping) of the workpiece 5 can also be observed from the electron beam image; when When the aspect ratio of the precursor material layer of the workpiece 5 is maintained at a value greater than 2, the generation of the curtaining effect can be reduced when the workpiece 5 is processed, and the yield of the manufactured samples can be increased.

In the operation step 66 of the method flowchart, after the processor 30 knows the actual deviation distance z of the target object 51 to be measured, the controller 40 can further control and adjust the ion beam mask 15 and the workpiece 5 according to the information of the deviation distance The relative positions of the ion beam mask 15 and the workpiece 5 are corrected so that they can be accurately processed. Referring further to FIG. 5 , the ion beam image is used to illustrate that the controller 40 controls and adjusts the positional relationship between the workpiece 5 and the ion beam mask 15 . The component symbol 15 in FIG. 5 represents the virtual image of the ion beam mask. Referring to (A) of FIG. 5 , the offset distance between the alignment of the ion beam mask 15 and the workpiece 5 is z. The controller 40 can further adjust the mutual positions of the ion beam shield 15 and the workpiece 5 according to the information of the deviation distance z between the target object 51 of the workpiece 5 and the centerline L of the ion beam shield 15 obtained by the operation module 33 relationship to remove the offset distance z. In some embodiments, the controller 40 can move the ion beam mask 15 according to the information to correct the relative positions of the ion beam mask 15 and the workpiece 5, so that the workpiece 5 can be located at a position that can be accurately processed (eg (B) shown).

In step 67 of the method flowchart, after the controller 40 corrects the positional relationship between the ion beam mask 15 and the workpiece 5 , the ion beam column 10 can irradiate the workpiece 5 with the ion beam 11 for etching or deposition processing. 6 , after the positional relationship between the ion beam mask 15 and the object to be measured 51 of the workpiece 5 is adjusted and corrected by the controller 40 , the ion beam column 10 can illuminate the ion beam 11 on the workpiece 5 for processing. 6, the ion beam 11 is emitted from the ion beam column 10, and is irradiated on the workpiece 5 through the ion beam mask 15. The ion beam mask 15 can block the ion beam 11 that will be irradiated on the object 51 to be measured, so that the The ion beam 11 only irradiates the other part of the object to be measured 51 on the workpiece 5, so the ion beam 11 can only remove the other part, and will not irradiate the object to be measured 51, and will not damage the object to be measured In this way, the target object 51 to be tested can finally be exposed so as to be in a testable state, and finally the workpiece 5 can be processed into a sample for analysis by the three-dimensional atom probe, and the processed workpiece 5 can continue to be processed. Perform 3D atom probe analysis.

In addition, as previously mentioned, the aspect ratio of the precursor material layer of the workpiece 5 can be observed from the electron beam image, and when the aspect ratio of the precursor material layer of the workpiece 5 is maintained at a value greater than about 2, the processing can be performed. The generation of the curtain effect is reduced when the workpiece 5 is used, and the yield of the manufactured sample is increased; therefore, when the ion beam 11 is used to process the workpiece 5, the irradiation processing of the ion beam 11 can be adjusted according to the electron beam image, so as to keep the workpiece 5 before The aspect ratio of the driving material layer is greater than a value of about 2; in some embodiments, the processor 30 can automatically adjust the irradiation process of the ion beam 11 .

Using the machine 1 of the present disclosure to process and produce atom probe samples can automatically and instantly process the workpiece 5 including the workpiece sample 51 to be tested. The processor 30 and the controller 40 of the machine 1 can instantly confirm the workpiece 5 and the ion The relative positions of the beam masks 15 to each other, and the relative positions between the two are corrected at the same time, and the workpiece 5 is automatically processed by the ion beam 11; this can save the time for producing atom probe samples and improve the production of atom probes. Sample yield.

The foregoing has outlined features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other procedures and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that these equivalent constructions should not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and alterations herein.

1: Machine 5: Workpiece 10: Ion beam tube 11: Ion Beam 15: Ion Beam Mask 20: Electron beam tube 21: Electron Beam 30: Processor 31: Image recognition module 33: Operation module 40: Controller 51: target to be measured 61: Method 62: Method 63: Method 64: Method 65: Method 66: Method 67: Method 331: Scale bar

Aspects of the present disclosure will be better understood from the following description, together with the accompanying drawings. It should be noted that in accordance with standard industry practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily expanded or reduced for clarity.

FIG. 1 is a schematic diagram of the structure of a machine according to an embodiment of the present disclosure.

FIG. 2 is a flow chart of a method for preparing semiconductor samples using the machine of FIG. 1 .

FIG. 3 is an ion beam image obtained using the machine of FIG. 1 .

FIG. 4 is an electron beam image obtained using the machine of FIG. 1 .

FIG. 5 is a schematic diagram of the operation of the controller according to the disclosed embodiment.

FIG. 6 is a schematic diagram of etching processing using the machine as shown in FIG. 1 .

1: Machine

5: Workpiece

10: Ion beam tube

11: Ion Beam

15: Ion Beam Mask

20: Electron beam tube

21: Electron Beam

30: Processor

31: Image recognition module

33: Operation module

40: Controller

Claims (10)

A machine for processing a structure, comprising: an electron beam column configured to irradiate a workpiece with an electron beam to obtain an electron beam image of the workpiece; an ion beam column configured to irradiate the workpiece with an ion beam to obtain an ion beam image of the workpiece and process the workpiece; an ion beam shield, disposed between the ion beam barrel and the workpiece; A processor connected to the electron beam column and the ion beam column, wherein the processor includes: an image recognition module for recognizing the electron beam image and the ion beam image; and an arithmetic module for processing the electron beam image to obtain position information of the workpiece; and A controller is connected with the processor and adjusts the relative positional relationship among the ion beam barrel, the ion beam shield and the workpiece according to the position information. The machine of claim 1, wherein the image recognition module is configured to further process the ion beam image. The machine of claim 2, wherein the image recognition module is configured to adjust the grayscale value of the ion beam image. The machine of claim 1, wherein the computing module is configured to compare measurement information of the electron beam image with pixel information of the electron beam image to obtain the position information of the workpiece. The machine of claim 4, wherein the computing module is configured to further generate a scale in the electron beam image to measure the measurement information of the electron beam image. The machine of claim 1, wherein the electron beam column is configured to correspond to the side of the workpiece, and the ion beam column is configured to correspond to the top of the workpiece. A method for machining a structure, comprising: Irradiating an electron beam to a workpiece to obtain an electron beam image of the workpiece; identifying the electron beam image with a processor to obtain a positional information of the workpiece from the electron beam image; and A controller is used to adjust the relative positional relationship between an ion beam, an ion beam mask and the workpiece according to the position information, and the workpiece is processed by the ion beam. The method of claim 7, further comprising real-time comparing measurement information of the electron beam image and pixel information of the electron beam image to obtain the position information of the workpiece. The method of claim 7, wherein processing the workpiece with the ion beam comprises irradiating the workpiece with the ion beam to perform etching processing. A machine for processing a structure, comprising: an electron beam column configured to irradiate a workpiece with an electron beam; an ion beam column configured to irradiate the workpiece with an ion beam; A processor configured to perform the following operations: obtaining an electron beam image from the electron beam column and/or obtaining an ion beam image from the ion beam column; identifying the electron beam image and/or the ion beam image; and performing operations based on the electron beam image and/or the ion beam image to obtain a positional information of the workpiece; and A controller controls the relative positional relationship among the ion beam barrel, an ion beam shield and the workpiece according to the position information.

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