CN114822978B - High-conductivity wire and preparation system and method thereof - Google Patents
High-conductivity wire and preparation system and method thereof Download PDFInfo
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- CN114822978B CN114822978B CN202210580946.4A CN202210580946A CN114822978B CN 114822978 B CN114822978 B CN 114822978B CN 202210580946 A CN202210580946 A CN 202210580946A CN 114822978 B CN114822978 B CN 114822978B
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 170
- 239000011889 copper foil Substances 0.000 claims abstract description 158
- 239000010410 layer Substances 0.000 claims abstract description 134
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 116
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 114
- 238000005245 sintering Methods 0.000 claims abstract description 49
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 30
- 238000000227 grinding Methods 0.000 claims abstract description 23
- 238000000748 compression moulding Methods 0.000 claims abstract description 8
- 239000012792 core layer Substances 0.000 claims abstract description 6
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 238000003825 pressing Methods 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 238000005096 rolling process Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 238000002788 crimping Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000004804 winding Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 abstract description 9
- 238000011065 in-situ storage Methods 0.000 abstract description 6
- 238000005036 potential barrier Methods 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910000851 Alloy steel Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000641 cold extrusion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001192 hot extrusion Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/012—Apparatus or processes specially adapted for manufacturing conductors or cables for manufacturing wire harnesses
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Non-Insulated Conductors (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention provides a high-conductivity wire and a preparation system and a preparation method thereof, wherein the high-conductivity wire comprises the following components: selecting a continuous copper foil of a specified shape and a specified size as a core layer; continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method; stopping growing according to the graphene film layer growing to the required distribution and the required number of layers; controlling the copper foil on which the graphene film layer grows to curl along a continuous direction perpendicular to the copper foil; controlling a roller grinding tool to roll the curled copper foil with the grown graphene film layer; performing compression molding and sintering on the rolled copper foil with the grown graphene film layer in a vacuum high-temperature environment; and determining that the preparation of the high-conductivity wire is finished according to the pressing forming and sintering to the required shape and the required size. According to the preparation method, the in-situ growth ensures the carrier transmission efficiency between the graphene film layer and the copper foil to the greatest extent, and the potential barrier between the graphene film layer and the copper foil is greatly reduced.
Description
Technical Field
The invention belongs to the technical field of preparing high-conductivity wires, and particularly relates to a high-conductivity wire and a preparation system and method thereof.
Background
This section provides merely background information related to the present disclosure and is not necessarily prior art.
The energy and power industries are the major and fundamental industries in national economic development strategies, and electrical energy is an important form of energy transport and conversion. With the continuous improvement of living standard of residents, the power consumption load is increased. The electric network in China has large scale and wide area coverage, and huge energy loss can be generated in the process of using and converting electric energy through electric wires, transformers and other devices.
Copper metal is the most widely used electrical material at present because of its good ductility and excellent electrical conductivity. With the rapid development of society and technology, many emerging technical fields are increasingly demanding conductive copper materials, and even demands for ultra-high conductive copper, a class of materials that has higher electrical conductivity than pure copper, are becoming urgent. And if the ultra-high conductive copper material is developed comprehensively and successfully, the performance of almost all electrical systems and equipment can be obviously improved, the energy consumption of the electrical systems and equipment can be reduced, and huge economic and social benefits are generated.
The direction of the single crystal copper wire is one of the directions for improving the conductivity of copper, and the direction can improve the conductivity of copper to 105% IACS at most, but the cost is high, and under the high cost, the conductivity improvement of about 2% can be realized only, the improvement amplitude is too small, and the cost effectiveness ratio is too high.
Mixing small-particle-size graphite, graphene, carbon nano tubes and the like with good conductivity with metal copper, and dispersing, extruding and stretching the mixture into the electric wire by a hot extrusion or cold extrusion mode. The method has the advantages that the conductive performance is improved but not more than 5% because the carbon material in the method cannot form a continuous passage, the dispersion is uneven, the carbon material and the processing cost are high, and the cost efficiency is higher.
Graphene grows on the surface of a copper wire in situ, and then is extruded and stretched into an electric wire after hot sintering, wherein the conductivity is about 105% IACS and is not more than 110% IACS at maximum, but the preparation cost is high.
Disclosure of Invention
In view of the foregoing, a first aspect of the present invention proposes a method for manufacturing a highly conductive wire, comprising:
selecting a continuous copper foil of a specified shape and a specified size as a core layer;
continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method;
stopping growing according to the graphene film layer growing to the required distribution and the required number of layers;
controlling the copper foil on which the graphene film layer grows to curl along a continuous direction perpendicular to the copper foil;
controlling a roller grinding tool to roll the curled copper foil with the grown graphene film layer;
performing compression molding and sintering on the rolled copper foil with the grown graphene film layer in a vacuum high-temperature environment;
and determining that the preparation of the high-conductivity wire is finished according to the pressing forming and sintering to the required shape and the required size.
The invention adopts foil-shaped copper foil and continuously grows a graphene film layer on the foil-shaped copper foil, curls along the continuous direction perpendicular to the copper foil, and prepares the high-conductivity wire with the required shape and the required size through rolling, compression molding and sintering after the curling.
The graphene film layer grown in situ is excellent and controllable in quality, and meanwhile, a continuous conduction structure can be formed in the transmission direction of the copper foil, so that the conductivity of the electric wire can be greatly improved. The graphene film layer grown in situ has excellent binding force with the copper foil, and the binding force between the copper foil and the graphene film layer can be further ensured by a sintering process in a vacuum high-temperature environment. In the structure, the copper foil is used as the core layer and has very high carrier concentration, and the graphene film layer has very high carrier mobility, so that the excellent binding force ensures the carrier transmission efficiency between the graphene film layer and the copper foil to the greatest extent, greatly reduces potential barriers between the graphene film layer and the copper foil, and greatly improves the conductivity of the material. Meanwhile, the graphene film layer and the copper foil are of continuous structures in the power transmission direction, so that scattering and loss in the transmission process are greatly reduced.
The roller grinding tool is used for rolling, so that extrusion and direct forming of the electric wire are facilitated, meanwhile, damage of a graphene film layer caused by stretching in the forming process can be reduced, and the final conductivity of the electric wire is guaranteed.
According to the preparation method of the electric wire, the graphene film layer is extremely excellent in electric performance, and the inherent electric and mechanical properties of the copper foil are well compounded, so that the electric conductivity is greatly improved, the method for continuously growing the graphene film layer on the copper foil, which is capable of realizing the electric conductivity of the prepared electric wire not lower than 105% IACS (the electric conductivity of International Annealed Copper Standard metal or alloy), is simplified in production process, easy to realize large-scale production and low in production cost.
In some embodiments of the invention, the copper foil has a purity of 80% to 99.999%.
In some embodiments of the invention, the copper foil has a purity of 99% to 99.99%.
In some embodiments of the invention, the copper foil has a thickness of 1 μm to 1mm.
In some embodiments of the invention, the copper foil has a thickness of 5 μm to 100 μm.
In some embodiments of the invention, in the continuous growth of the graphene film layer on the surface of the copper foil through a chemical vapor deposition method, the graphene film layer is continuously grown to cover 1-10 layers on one side or two sides of the copper foil through a chemical vapor deposition method.
In some embodiments of the present invention, in the controlling the copper foil on which the graphene film layer is grown to curl in a continuous direction perpendicular to the copper foil, the copper foil on which the graphene film layer is grown is controlled to curl in a continuous direction perpendicular to the copper foil by one or more of layer-by-layer stacking, concentric winding, and random stacking.
In some embodiments of the present invention, the roller mill material has a mohs hardness of 4 or more and a melting point of 1200 ℃ or more.
In some embodiments of the present invention, the roller grinder includes a first roller and a second roller, at least one of the first roller and the second roller is provided with an annular groove, and a space for rolling the copper foil of the grown graphene film layer after crimping is formed between the first roller and the second roller.
In some embodiments of the invention, the pressure applied by the roller mill to the copper foil of the finished curled grown graphene film layer is in the range of 1bar to 1000bar.
In some embodiments of the present invention, in the press forming and sintering of the rolled copper foil on which the graphene film layer is grown in the vacuum high temperature environment, the sintering temperature is 200 ℃ to 1100 ℃.
In some embodiments of the present invention, in the press forming and sintering of the rolled copper foil on which the graphene film layer is grown in the vacuum high temperature environment, the vacuum degree is 0.01Pa to 0.01MPa.
In some embodiments of the present invention, in the press forming and sintering of the rolled copper foil on which the graphene film layer is grown in the vacuum high temperature environment, the press forming pressure is 1bar to 1000bar.
In some embodiments of the invention, the highly conductive wire has a cross-sectional shape that is circular, elliptical, fan-shaped, or rectangular.
In some embodiments of the invention, the copper foil has a cross-sectional area of 5 μm 2 -50cm 2 。
The second aspect of the present invention provides a system for preparing a high-conductivity electric wire, which is used for implementing the preparation method of the high-conductivity electric wire in any one of the above technical solutions, and comprises a chemical vapor deposition device, a crimping device, a roller grinding tool and a sintering device, wherein the chemical vapor deposition device is used for growing a graphene film layer on a copper foil surface, the crimping device is used for crimping the copper foil on which the graphene film layer is grown along a continuous direction perpendicular to the copper foil, the roller grinding tool is used for rolling the copper foil on which the crimped copper foil on which the graphene film layer is grown, and the sintering device is used for performing compression molding and sintering on the copper foil on which the rolled copper foil on which the graphene film layer is grown is formed.
The system for preparing the high-conductivity wire in the embodiment of the invention is used for realizing the preparation method of the high-conductivity wire in any one of the technical schemes, and the prepared high-conductivity wire has the same beneficial effects and is not described herein.
The third aspect of the present invention provides a highly conductive wire, which is obtained by the method for manufacturing a highly conductive wire according to any one of the above aspects, and includes a copper foil and a graphene film layer continuously grown on the surface of the copper foil by a chemical vapor deposition method.
The high-conductivity wire in the embodiment of the invention has the same beneficial effects as those of the high-conductivity wire prepared by the preparation method of the high-conductivity wire in any one of the above technical schemes, and is not described herein again.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
fig. 1 is a flowchart of a method for manufacturing a highly conductive wire according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a copper foil curled with a graphene film layer grown by layer-by-layer stacking;
FIG. 3 is a schematic diagram of a copper foil with a graphene film layer grown by winding in a concentric manner;
FIG. 4 is a schematic diagram of a copper foil with a rolled graphene film layer grown by random stacking;
fig. 5 is a schematic structural diagram of a system for manufacturing a highly conductive wire according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a roller mill of a system for manufacturing a high-conductivity wire according to an embodiment of the present invention;
FIG. 7 is a schematic view of a rolled copper foil with a rounded space for completing a curled grown graphene film layer according to an embodiment of the present invention;
FIG. 8 is a schematic view showing the space of a copper foil for rolling a curled grown graphene film layer in a fan shape according to an embodiment of the present invention;
FIG. 9 is a schematic view of a rectangular space of a copper foil for rolled and curled grown graphene film layer according to an embodiment of the present invention;
FIG. 10 is a schematic view showing the space of a copper foil for rolling a curled grown graphene film layer in an elliptical shape according to an embodiment of the present invention;
FIG. 11 is a schematic view showing a semicircular space of a copper foil for rolling a curled grown graphene film layer according to an embodiment of the present invention;
FIG. 12 is a schematic view showing a copper foil for rolled and curled grown graphene film layers with a fan-shaped space according to another embodiment of the present invention;
FIG. 13 is a schematic view showing a rectangular space of a copper foil for roll-rolled and curled graphene film layer according to another embodiment of the present invention
Fig. 14 is a schematic diagram showing a space of a copper foil for rolling a rolled and grown graphene film layer according to an embodiment of the present invention is semi-elliptical.
The various references in the drawings are as follows:
1a, growing a copper foil of a graphene film layer;
1b, curling copper foil with a graphene film layer grown;
1c, completing rolled copper foil with a well-grown graphene film layer;
2. a highly conductive wire;
3. roller grinding tool; 31. a first roller; 32. a second roller; 33. space 311, first groove; 321. a second groove;
4. a sintering device;
5. the rotation direction of the first roller;
6. the rotation direction of the second roller;
7. the preparation direction of the high-conductivity wire.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For ease of description, spatially relative terms, such as "inner," "outer," "lower," "below," "upper," "above," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below … …" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions) and the spatial relative relationship descriptors used herein interpreted accordingly.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
As shown in fig. 1, a first aspect of the present invention provides a method for manufacturing a highly conductive wire, including:
selecting a continuous copper foil of a specified shape and a specified size as a core layer;
continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method;
stopping growing according to the required distribution and the required number of layers of the graphene film;
the copper foil 1a of the grown graphene film layer is controlled to curl along a continuous direction perpendicular to the copper foil;
the roller grinding tool 3 is controlled to roll the curled copper foil 1b with the grown graphene film layer;
carrying out compression molding and sintering on the rolled copper foil 1c with the grown graphene film layer in a vacuum high-temperature environment;
the preparation of the highly conductive wire 2 is determined to be completed according to the press molding and sintering to a desired shape and a desired size.
The invention adopts foil-shaped copper foil and continuously grows a graphene film layer on the foil-shaped copper foil, curls along the continuous direction perpendicular to the copper foil, and prepares the high-conductivity wire 2 with the required shape and the required size through rolling, compression molding and sintering after the curling.
The graphene film layer grown in situ is excellent and controllable in quality, and meanwhile, a continuous conduction structure can be formed in the transmission direction of the copper foil, so that the conductivity of the electric wire can be greatly improved. The graphene film layer grown in situ has excellent binding force with the copper foil, and the binding force between the copper foil and the graphene film layer can be further ensured by a sintering process in a vacuum high-temperature environment. In the structure, the copper foil is used as the core layer and has very high carrier concentration, and the graphene film layer has very high carrier mobility, so that the excellent binding force ensures the carrier transmission efficiency between the graphene film layer and the copper foil to the greatest extent, greatly reduces potential barriers between the graphene film layer and the copper foil, and greatly improves the conductivity of the material. Meanwhile, the graphene film layer and the copper foil are of continuous structures in the power transmission direction, so that scattering and loss in the transmission process are greatly reduced.
The roller grinding tool 3 is used for rolling to facilitate extrusion and direct forming of the electric wire, meanwhile, damage of a graphene film layer caused by stretching in the forming process can be reduced, and final conductivity of the electric wire is guaranteed.
According to the preparation method of the electric wire, the graphene film layer is extremely excellent in electric performance, and the inherent electric and mechanical properties of the copper foil are well compounded, so that the electric conductivity is greatly improved, the method for continuously growing the graphene film layer on the copper foil, which is capable of realizing the electric conductivity of the prepared electric wire not lower than 105% IACS (the electric conductivity of International Annealed Copper Standard metal or alloy), is simplified in production process, easy to realize large-scale production and low in production cost.
In some embodiments of the invention, the copper foil has a purity of 80% to 99.999%.
In some embodiments of the invention, the copper foil has a purity of 99% to 99.99%.
In some embodiments of the invention, the copper foil has a thickness of 1 μm to 1mm.
In some embodiments of the invention, the copper foil has a thickness of 5 μm to 100 μm.
In some embodiments of the present invention, in continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method, the graphene film layer is continuously grown on one side or both sides of the copper foil by a chemical vapor deposition method to cover 1-10 layers.
In some embodiments of the present invention, as shown in fig. 2 to 4, in controlling the curling of the copper foil 1a of the grown graphene film layer in a continuous direction perpendicular to the copper foil, the curling of the copper foil 1a of the grown graphene film layer in a continuous direction perpendicular to the copper foil is controlled by one or more of stacking layer by layer, concentric winding, and random stacking.
In some embodiments of the present invention, the roller mill 3 has a mohs hardness of 4 or more and a melting point of 1200 ℃.
In some embodiments of the present invention, as shown in fig. 6, the roller grinder 3 includes a first roller 31 and a second roller 32, at least one of the first roller 31 and the second roller 32 is provided with an annular groove, and a space 33 for rolling the rolled copper foil 1b of the rolled graphene film layer is formed between the first roller 31 and the second roller 32. As shown in fig. 7-14, the space 33 may be circular, oval, rectangular, fan-shaped, semi-circular, semi-oval in shape.
In some embodiments of the present invention, as shown in fig. 7 to 10, a first groove 311 is provided on the first roller 31, a second groove 321 is provided on the second roller 32, and the first groove 311 and the second groove 321 are both shaped and sized to form a circular, oval, fan-shaped or rectangular space 33. As shown in fig. 11 to 14, the first roller 31 is provided with a first groove 311, the second roller 32 is not provided with a groove, and the shape and size of the first groove 311 determine the shape and size of the space 33, and may be used to form a semicircular, semi-elliptical, fan-shaped or rectangular space 33.
In some embodiments of the present invention, the roller mill 3 applies a pressure ranging from 1bar to 1000bar to the copper foil 1b of the rolled and grown graphene film layer.
In some embodiments of the present invention, in the press forming and sintering of the rolled copper foil 1c of the grown graphene film layer under a vacuum high temperature environment, the sintering temperature is 200-1100 ℃.
In some embodiments of the present invention, in the press forming and sintering of the rolled copper foil 1c having the grown graphene film layer under a vacuum high temperature environment, the vacuum environment is 0.01Pa to 0.01MPa.
In some embodiments of the present invention, in the press forming and sintering of the rolled copper foil 1c having the grown graphene film layer under a vacuum high temperature environment, the press forming pressure is 1bar to 1000bar.
In some embodiments of the present invention, the cross-sectional shape of the highly conductive wire 2 is circular, elliptical, fan-shaped, or rectangular.
In some embodiments of the invention, the copper foil has a cross-sectional area of 5 μm 2 -50cm 2 。
As shown in fig. 5, a second aspect of the present invention proposes a manufacturing system of a highly conductive wire for realizing the manufacturing method of the highly conductive wire in any of the above embodiments, comprising a chemical vapor deposition apparatus for growing a graphene film layer on a surface of a copper foil, a crimping apparatus for crimping the copper foil 1a of the grown graphene film layer in a continuous direction perpendicular to the copper foil, a roller mill for rolling the copper foil 1b of the rolled grown graphene film layer, and a sintering apparatus 4 for press-forming and sintering the copper foil 1c of the rolled grown graphene film layer. 5 is the rotation direction of the first roller 31, 6 is the rotation direction of the second roller 32, 7 is the preparation direction of the high conductive wire 2, and the rotation directions of the first roller 31 and the second roller 32 are opposite.
The system for preparing the high-conductivity wire according to the embodiment of the present invention is used to implement the method for preparing the high-conductivity wire according to any of the embodiments, and the prepared high-conductivity wire 2 has the same beneficial effects and is not described herein.
A third aspect of the present invention proposes a highly conductive wire 2 obtained by the method for producing a highly conductive wire in any of the above embodiments, comprising a copper foil and a graphene film layer continuously grown on the surface of the copper foil by a chemical vapor deposition method.
The high conductive wire 2 according to the embodiment of the present invention has the same beneficial effects as those of the high conductive wire 2 prepared by the method for preparing a high conductive wire according to any of the embodiments described above, and will not be described herein.
The method for preparing the high-conductivity wire and the prepared high-conductivity wire 2 according to the present invention will be described in the following embodiments:
example 1
As shown in fig. 1, a copper foil having a width of 333 mm, a thickness of 12 μm, and a purity of 99.99% was selected, and the wire was prepared by crimping the copper foil in a layer-by-layer manner.
Specifically, the copper foil is sent into CVD (Chemical Vapor Deposition chemical vapor deposition) equipment, and 1-3 layers of continuously distributed graphene film layers are prepared on the surface of the copper foil through the chemical vapor deposition. The copper foil 1a with the grown graphene film layer is curled into a wire bundle in a layer-by-layer stacking mode, the wire bundle is sent into a roller grinding tool 3 in a preparation system of a high-conductivity electric wire 2 to be rolled, the roller grinding tool 3 comprises a first roller 31 and a second roller 32, a first groove 311 on the first roller 31 is semicircular, a second groove 321 on the second roller 32 is semicircular, a circular space 33 is finally formed for rolling the copper foil 1b with the rolled grown graphene film layer, the pressure applied by the roller grinding tool 3 to the copper foil 1b with the rolled grown graphene film layer is 100bar, the rolled copper foil is formed, and the materials of the first roller 31 and the second roller 32 are alloy steel with Mohs hardness of 5.5 and a melting point of more than or equal to 1300 ℃. The wire harness after the roll forming is put into a sintering device 4, the sintering temperature is 800 ℃, the sintering environment vacuum degree is 1Pa, and the press forming pressure applied to the wire harness during sintering is 90bar.
After sintering, a cross-sectional area of 4mm is formed 2 The round wire of (2) has a conductivity of 115% IACS to 120% IACS as measured by Van der Waals method.
Example two
As shown in FIG. 2, a copper foil having a width of 22mm, a thickness of 18 μm and a purity of 99.9% was selected, and the wire was prepared by winding the copper foil concentrically from inside to outside.
Specifically, the copper foil is sent into CVD (Chemical Vapor Deposition chemical vapor deposition) equipment, and 2-5 layers of continuously distributed graphene film layers are prepared on the surface of the copper foil through growth of the chemical vapor deposition method. The copper foil 1a of the grown graphene film layer is curled into a wire harness in an inside-out mode, rolling is carried out in a roller grinding tool 3 in a preparation system of the high-conductivity electric wire 2, the roller grinding tool 3 comprises a first roller 31 and a second roller 32, a first groove 311 on the first roller 31 is semicircular, a second groove 321 on the second roller 32 is semicircular, a circular space 33 is finally formed for rolling the curled copper foil 1b of the grown graphene film layer, the pressure applied by the roller grinding tool 3 to the curled copper foil 1b of the grown graphene film layer is 50bar, and the roller grinding tool is formed by rolling alloy steel with the Mohs hardness of 6 and the melting point of 1250 ℃ or higher. The wire harness after the roll forming enters a sintering device 4, the sintering temperature is 850 ℃, the sintering environment vacuum degree is 5Pa, and the press forming pressure applied to the wire harness during sintering is 60bar.
After sintering, a cross-sectional area of 10mm was formed 2 The round wire of (2) has a conductivity of 110% IACS to 120% IACS as measured by Van der Waals method.
Example III
As shown in FIG. 3, a copper foil having a width of 160mm, a thickness of 25 μm and a purity of 99.5% was selected and rolled by random stacking to prepare an electric wire.
Specifically, the copper foil is sent into CVD (Chemical Vapor Deposition chemical vapor deposition) equipment, and 3-5 layers of continuously distributed graphene film layers are prepared on the surface of the copper foil through growth of the chemical vapor deposition method. The copper foil 1a with the grown graphene film layer is curled into a wire harness in an inside-out mode, rolling is carried out in a roller grinding tool 3 in a preparation system of the high-conductivity electric wire 2, the roller grinding tool 3 comprises a first roller 31 and a second roller 32, a first groove 311 on the first roller 31 is rectangular, a second groove 321 on the second roller 32 is rectangular, a rectangular space 33 is finally formed for rolling the copper foil 1b with the rolled grown graphene film layer, the pressure applied by the roller grinding tool 3 to the copper foil 1b with the rolled grown graphene film layer is 200bar, and the first roller 31 and the second roller 32 are made of alloy steel with Mohs hardness of 6.5 and a melting point of more than or equal to 1200 ℃. The wire harness after the roll forming enters a sintering device 4, the sintering temperature is 900 ℃, the sintering environment vacuum degree is 10Pa, and the press forming pressure applied to the wire harness during sintering is 180bar.
After sintering, a cross-sectional area of 25mm is formed 2 The round wire of (2) has a conductivity of 110% IACS to 120% IACS as measured by Van der Waals method.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (14)
1. A method of making a highly conductive wire comprising:
selecting a continuous copper foil of a specified shape and a specified size as a core layer;
continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method;
stopping growing according to the graphene film layer growing to the required distribution and the required number of layers;
controlling the copper foil on which the graphene film layer grows to curl along a continuous direction perpendicular to the copper foil;
controlling a roller grinding tool to roll the curled copper foil with the grown graphene film layer;
performing compression molding and sintering on the rolled copper foil with the grown graphene film layer in a vacuum high-temperature environment;
determining that the preparation of the high-conductivity wire is finished according to the pressing forming and sintering to the required shape and the required size;
continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method, wherein the graphene film layer continuously grows and covers 1-10 layers on one side or two sides of the copper foil by the chemical vapor deposition method;
in the process of controlling the copper foil on which the graphene film layer grows to curl along the continuous direction perpendicular to the copper foil, controlling the copper foil on which the graphene film layer grows to curl along the continuous direction perpendicular to the copper foil by one or more modes of layer-by-layer stacking, concentric winding and random stacking;
the roller grinding tool comprises a first roller and a second roller, at least one of the first roller and the second roller is provided with an annular groove, and a space for rolling and finishing curled copper foil with the graphene film layer grown is formed between the first roller and the second roller.
2. The method of manufacturing a highly conductive wire according to claim 1, wherein the copper foil has a purity of 80% -99.999%.
3. The method of producing a highly conductive wire according to claim 2, wherein the copper foil has a purity of 99% to 99.99%.
4. The method for manufacturing a highly conductive wire according to claim 1, wherein the copper foil has a thickness of 1 μm to 1mm.
5. The method for manufacturing a highly conductive wire according to claim 1, wherein the copper foil has a thickness of 5 μm to 100 μm.
6. The method of manufacturing a highly conductive wire according to claim 1, wherein the roller grinding tool material has a mohs hardness of 4 or more and a melting point of 1200 ℃.
7. The method of manufacturing a highly conductive wire according to claim 1, wherein the pressure applied by the roller mill to the copper foil of the finished curled grown graphene film layer ranges from 1bar to 1000bar.
8. The method of producing a highly conductive wire according to claim 1, wherein in the press forming and sintering of the copper foil on which the rolled graphene film layer is grown in the vacuum high temperature environment, a sintering temperature is 200 ℃ to 1100 ℃.
9. The method for manufacturing a highly conductive wire according to claim 1, wherein in the press forming and sintering of the copper foil on which the rolled graphene film layer is grown in the vacuum high temperature environment, a vacuum degree is 0.01Pa to 0.01MPa.
10. The method of manufacturing a highly conductive wire according to claim 1, wherein in the press forming and sintering of the copper foil on which the rolled graphene film layer is grown under the vacuum high temperature environment, the press forming pressure is 1bar to 1000bar.
11. The method of manufacturing a highly conductive wire according to claim 1, wherein the highly conductive wire has a circular, elliptical, fan-shaped or rectangular cross-sectional shape.
12. The method for producing a highly conductive wire according to claim 1, wherein the copper foil has a cross-sectional area of 5 μm 2 -50cm 2 。
13. A preparation system of a high-conductivity wire, for implementing the preparation method of the high-conductivity wire according to any one of claims 1 to 12, comprising a chemical vapor deposition device, a crimping device, a roller grinding tool and a sintering device, wherein the chemical vapor deposition device is used for continuously growing a graphene film layer on the surface of a copper foil, the crimping device is used for crimping the copper foil on which the graphene film layer is grown along a continuous direction perpendicular to the copper foil, the roller grinding tool is used for rolling the copper foil on which the crimped copper foil on which the graphene film layer is grown, and the sintering device is used for performing compression molding and sintering on the copper foil on which the rolled copper foil on which the graphene film layer is grown.
14. A highly conductive wire obtained by the method for producing a highly conductive wire according to any one of claims 1 to 12, characterized by comprising a copper foil and a graphene film layer continuously grown on the surface of the copper foil by a chemical vapor deposition method.
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