CN114822978A - High-conductivity wire and preparation system and method thereof - Google Patents
High-conductivity wire and preparation system and method thereof Download PDFInfo
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- CN114822978A CN114822978A CN202210580946.4A CN202210580946A CN114822978A CN 114822978 A CN114822978 A CN 114822978A CN 202210580946 A CN202210580946 A CN 202210580946A CN 114822978 A CN114822978 A CN 114822978A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 163
- 239000011889 copper foil Substances 0.000 claims abstract description 152
- 239000010410 layer Substances 0.000 claims abstract description 123
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 116
- 238000005245 sintering Methods 0.000 claims abstract description 50
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 27
- 238000000227 grinding Methods 0.000 claims abstract description 20
- 239000012792 core layer Substances 0.000 claims abstract description 6
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 238000000748 compression moulding Methods 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 238000005096 rolling process Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000004804 winding Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 9
- 238000011065 in-situ storage Methods 0.000 abstract description 6
- 238000005036 potential barrier Methods 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001125 extrusion Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910000851 Alloy steel Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000641 cold extrusion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001192 hot extrusion Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/012—Apparatus or processes specially adapted for manufacturing conductors or cables for manufacturing wire harnesses
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Abstract
The invention provides a high-conductivity wire and a preparation system and a preparation method thereof, wherein the preparation system comprises the following steps: selecting a continuous copper foil with a specified shape and a specified size as a core layer; continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method; stopping growing according to the required distribution and the required number of layers of the graphene film layer; controlling the copper foil on which the graphene film layer grows to curl along a continuous direction vertical to the copper foil; controlling a roller grinding tool to roll the curled copper foil growing the graphene film layer; under a vacuum high-temperature environment, performing compression molding and sintering on the rolled copper foil with the grown graphene film layer; and determining that the preparation of the high-conductivity wire is finished according to the press forming and sintering to the required shape and the required size. The preparation method ensures the carrier transmission efficiency between the graphene film layer and the copper foil to the maximum extent through in-situ growth, and greatly reduces the potential barrier between the graphene film layer and the copper foil.
Description
Technical Field
The invention belongs to the technical field of high-conductivity electric wires, and particularly relates to a high-conductivity electric wire and a preparation system and method thereof.
Background
This section provides background information related to the present disclosure only and is not necessarily prior art.
The energy and power industry is the key and fundamental industry in the national economic development strategy, and electric energy is an important form of energy transportation and conversion. With the increasing living standard of residents, the power load is increased day by day. The electric network scale of our country is large, the area covers extensively, the electric energy is used and in the course of changing through apparatuses such as the electric wire, transformer, etc., can produce the enormous energy loss.
Copper metal is currently the most widely used electrical material because of its good ductility and excellent electrical conductivity. With the rapid development of society and science and technology, the requirements of many emerging technical fields on conductive copper materials are higher and higher, and even the requirements on ultrahigh conductive copper, namely materials with conductivity higher than that of pure copper, are urgent. And if the ultrahigh conductive copper material is developed completely and successfully, the performance of almost all electrical systems and equipment can be obviously improved, the energy consumption is reduced, and great economic and social benefits are generated.
The direction of the single crystal copper wire is one of the directions for improving the conductivity of the copper, the conductivity of the copper can be improved to 105% IACS at most, but the cost is high, the conductivity can be improved by about 2% mostly at high cost, the improvement amplitude is too small, and the cost-effectiveness ratio is too high.
Mixing small-particle-size graphite, graphene, carbon nanotubes and the like with good conductivity with metal copper, and dispersing, extruding and stretching the mixture into the wire in a hot extrusion or cold extrusion mode. The method has the advantages that the carbon material in the method can not form a continuous passage, the conductivity is improved but is not more than 5%, the dispersion is uneven, the carbon material and the processing cost are high, and the cost-effectiveness ratio is high.
Graphene grows on the surface of a copper wire in situ, and then the graphene is subjected to hot sintering and extrusion stretching to form the wire, wherein the conductivity is about 105% IACS (International Annealed copper wire graphene is subjected to hot sintering, extrusion stretching electric conductivity is obtained through extrusion stretching to obtain electric wire, and electric wire electric conductivity is high, and preparation cost is high.
Disclosure of Invention
In view of the above problems, a first aspect of the present invention provides a method for producing a highly conductive electric wire, including:
selecting a continuous copper foil with a specified shape and a specified size as a core layer;
continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method;
stopping growing according to the required distribution and the required number of layers of the graphene film layer;
controlling the copper foil on which the graphene film layer grows to curl along a continuous direction vertical to the copper foil;
controlling a roller grinding tool to roll the curled copper foil growing the graphene film layer;
under a vacuum high-temperature environment, performing compression molding and sintering on the rolled copper foil with the grown graphene film layer;
and determining that the preparation of the high-conductivity wire is finished according to the press forming and sintering to the required shape and the required size.
The invention adopts foil-shaped copper foil and continuously grows a graphene film layer on the foil-shaped copper foil, curls along the continuous direction vertical to the copper foil, and prepares the high-conductivity wire with the required shape and the required size by rolling, press forming and sintering after curling.
The graphene film layer grown in situ has excellent and controllable quality, and meanwhile, a continuous conducting structure can be formed in the transmission direction of the copper foil, so that the conducting performance of the wire can be greatly improved. The graphene film layer grown in situ has excellent binding force with the copper foil, and the binding force between the copper foil and the graphene film layer can be further ensured by a sintering process in a vacuum high-temperature environment. In the structure, the copper foil as a core layer has very high carrier concentration, and the graphene film layer has very high carrier mobility, so that the excellent binding force guarantees the carrier transmission efficiency between the graphene film layer and the copper foil to the greatest extent, the potential barrier between the graphene film layer and the copper foil is greatly reduced, and the conductivity of the material is greatly improved. Meanwhile, the graphene film layer and the copper foil are of continuous structures in the power transmission direction, so that scattering and loss in the transmission process are greatly reduced.
The rolling of the roller grinding tool is beneficial to the extrusion and direct forming of the electric wire, meanwhile, the damage of a graphene film layer caused by stretching in the forming process can be reduced, and the final electric conductivity of the electric wire is guaranteed.
According to the invention, through the optimized preparation method of the wire, the graphene film layer has excellent electrical property, and the inherent electrical and mechanical properties of the Copper foil are well compounded, so that the electrical conductivity is greatly improved, the method for continuously growing the graphene film layer on the Copper foil can be realized, the electrical conductivity of the prepared wire is not lower than 105% IACS (electrical conductivity of the International interconnected coater Standard metal or alloy), the production process is simplified, the large-scale production is easier to realize, and the production cost is reduced.
In some embodiments of the invention, the copper foil has a purity of 80% to 99.999%.
In some embodiments of the invention, the copper foil has a purity of 99% to 99.99%.
In some embodiments of the invention, the copper foil has a thickness of 1 μm to 1 mm.
In some embodiments of the invention, the copper foil has a thickness of 5 μm to 100 μm.
In some embodiments of the present invention, in the continuously growing graphene film layer on the surface of the copper foil by the chemical vapor deposition method, the graphene film layer is continuously grown on one side or both sides of the copper foil by the chemical vapor deposition method to cover 1-10 layers.
In some embodiments of the present invention, in the step of controlling the copper foil on which the graphene film layer is grown to curl in the direction perpendicular to the continuous direction of the copper foil, the copper foil on which the graphene film layer is grown to curl in the direction perpendicular to the continuous direction of the copper foil is controlled by one or more of stacking layer by layer, concentrically winding, and randomly stacking.
In some embodiments of the present invention, the material of the roller grinding tool has a mohs hardness of 4 or more and a melting point of 1200 ℃ or more.
In some embodiments of the present invention, the roller grinding tool includes a first roller and a second roller, at least one of the first roller and the second roller is provided with an annular groove, and a space for rolling the curled copper foil on which the graphene film is grown is formed between the first roller and the second roller.
In some embodiments of the present invention, the pressure applied by the roller grinder to the copper foil with the finished rolled graphene film layer grown thereon ranges from 1bar to 1000 bar.
In some embodiments of the present invention, in the step of performing press forming and sintering on the rolled copper foil on which the graphene film layer is grown in the vacuum high-temperature environment, the sintering temperature is 200 ℃ to 1100 ℃.
In some embodiments of the present invention, in the press forming and sintering, under the vacuum high-temperature environment, the rolled copper foil on which the graphene film layer is grown is subjected to a vacuum degree of 0.01Pa to 0.01 MPa.
In some embodiments of the present invention, in the step of performing press forming and sintering on the rolled copper foil on which the graphene film layer is grown in the vacuum high-temperature environment, the press forming pressure is 1bar to 1000 bar.
In some embodiments of the invention, the cross-sectional shape of the highly conductive wire is circular, elliptical, fan-shaped, or rectangular.
In some embodiments of the invention, the copper foil has a cross-sectional area of 5 μm 2 -50cm 2 。
The invention provides a preparation system of a high-conductivity electric wire, which is used for realizing the preparation method of the high-conductivity electric wire in any technical scheme, and the preparation system comprises a chemical vapor deposition device, a curling device, a roller grinding tool and a sintering device, wherein the chemical vapor deposition device is used for growing a graphene film layer on the surface of a copper foil, the curling device is used for curling the copper foil with the grown graphene film layer along a continuous direction vertical to the copper foil, the roller grinding tool is used for rolling the curled copper foil with the grown graphene film layer, and the sintering device is used for performing press forming and sintering on the rolled copper foil with the grown graphene film layer.
The system for preparing the high-conductivity electric wire is used for realizing the method for preparing the high-conductivity electric wire in any technical scheme, and the prepared high-conductivity electric wire has the same beneficial effects and is not repeated herein.
The third aspect of the invention provides a high-conductivity electric wire, which is obtained by the preparation method of the high-conductivity electric wire in any technical scheme, and comprises a copper foil and a graphene film layer continuously grown on the surface of the copper foil by a chemical vapor deposition method.
The high-conductivity wire of the embodiment of the invention has the same beneficial effects as the high-conductivity wire prepared by the preparation method of the high-conductivity wire in any technical scheme, and is not repeated herein.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a flow chart of a method of making a highly conductive wire according to an embodiment of the present invention;
FIG. 2 is a schematic view of a copper foil with a graphene film layer rolled and grown in a layer-by-layer manner according to the present invention;
fig. 3 is a schematic diagram of a copper foil with a graphene film layer rolled up in a concentric winding manner according to the present invention;
FIG. 4 is a schematic diagram of a copper foil with a graphene film layer grown by random stacking according to the present invention;
FIG. 5 is a schematic structural diagram of a system for preparing a highly conductive wire according to an embodiment of the present invention;
FIG. 6 is a schematic structural view of a roller grinder of a system for manufacturing a highly conductive wire according to an embodiment of the present invention;
fig. 7 is a schematic view showing that the space of the copper foil for rolling the rolled graphene film is circular;
fig. 8 is a schematic view showing a fan-shaped space of a copper foil for rolling a rolled graphene film;
fig. 9 is a schematic diagram of a rolled-up graphene film layer with rectangular spaces for copper foil in accordance with an embodiment of the present invention;
fig. 10 is a schematic view showing that the space of the copper foil for rolling the rolled graphene film is elliptical;
fig. 11 is a schematic view showing that the space of the copper foil used for rolling the rolled graphene film is semicircular;
fig. 12 is a schematic view showing a fan-shaped space of a copper foil for rolling a rolled graphene film according to another embodiment of the present invention;
FIG. 13 is a schematic view showing that the space of the copper foil for rolling the rolled good graphene film layer is rectangular according to another embodiment of the present invention
Fig. 14 is a schematic diagram showing a semi-elliptical space of a copper foil used for rolling a rolled graphene film layer according to an embodiment of the present invention.
The reference symbols in the drawings denote the following:
1a, growing a copper foil of the graphene film layer;
1b, curling a copper foil with a good graphene film layer;
1c, finishing the rolled copper foil with the graphene film layer;
2. a highly conductive wire;
3. rolling a grinding tool; 31. a first roller; 32. a second roller; 33. space 311, first recess; 321. a second groove;
4. a sintering device;
5. the rotation direction of the first roller;
6. the rotation direction of the second roller;
7. the preparation direction of the high-conductivity wire.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may be intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For convenience of description, spatially relative terms, such as "inner", "outer", "lower", "below", "upper", "above", and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below … …" can include both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
As shown in fig. 1, a first aspect of the present invention provides a method for preparing a highly conductive wire, including:
selecting a continuous copper foil with a specified shape and a specified size as a core layer;
continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method;
stopping growing according to the required distribution and the required number of layers of the graphene film layer;
controlling the copper foil 1a of the grown graphene film layer to curl along the continuous direction vertical to the copper foil;
controlling a roller grinding tool 3 to roll the curled copper foil 1b with the grown graphene film layer;
under the vacuum high-temperature environment, carrying out press forming and sintering on the rolled copper foil 1c with the graphene film layer grown;
the completion of the production of the highly conductive electric wire 2 is determined according to the press molding and sintering to the desired shape and the desired size.
The invention adopts foil-shaped copper foil and continuously grows a graphene film layer on the foil-shaped copper foil, curls along the continuous direction vertical to the copper foil, and prepares the high-conductivity wire 2 with the required shape and the required size by rolling, press forming and sintering after curling.
The graphene film layer grown in situ has excellent and controllable quality, and meanwhile, a continuous conducting structure can be formed in the transmission direction of the copper foil, so that the conducting performance of the wire can be greatly improved. The graphene film layer grown in situ has excellent binding force with the copper foil, and the binding force between the copper foil and the graphene film layer can be further ensured by a sintering process in a vacuum high-temperature environment. In the structure, the copper foil as a core layer has very high carrier concentration, and the graphene film layer has very high carrier mobility, so that the excellent binding force guarantees the carrier transmission efficiency between the graphene film layer and the copper foil to the greatest extent, the potential barrier between the graphene film layer and the copper foil is greatly reduced, and the conductivity of the material is greatly improved. Meanwhile, the graphene film layer and the copper foil are of continuous structures in the power transmission direction, so that scattering and loss in the transmission process are greatly reduced.
The rolling of the roller grinding tool 3 is beneficial to the extrusion and direct forming of the electric wire, meanwhile, the damage of a graphene film layer caused by stretching in the forming process can be reduced, and the final electric conductivity of the electric wire is guaranteed.
According to the invention, through the optimized preparation method of the wire, the graphene film layer has excellent electrical property, and the inherent electrical and mechanical properties of the Copper foil are well compounded, so that the electrical conductivity is greatly improved, the method for continuously growing the graphene film layer on the Copper foil can be realized, the electrical conductivity of the prepared wire is not lower than 105% IACS (electrical conductivity of the International interconnected coater Standard metal or alloy), the production process is simplified, the large-scale production is easier to realize, and the production cost is reduced.
In some embodiments of the invention, the copper foil has a purity of 80% -99.999%.
In some embodiments of the invention, the copper foil has a purity of 99% to 99.99%.
In some embodiments of the invention, the copper foil has a thickness of 1 μm to 1 mm.
In some embodiments of the invention, the copper foil has a thickness of 5 μm to 100 μm.
In some embodiments of the present invention, in continuously growing the graphene film layer on the surface of the copper foil through a chemical vapor deposition method, the graphene film layer is continuously grown on one side or both sides of the copper foil through a chemical vapor deposition method to cover 1-10 layers.
In some embodiments of the present invention, as shown in fig. 2 to 4, in controlling the copper foil 1a of the grown graphene film layer to curl in a continuous direction perpendicular to the copper foil, the copper foil 1a of the grown graphene film layer to curl in a continuous direction perpendicular to the copper foil is controlled by one or more of layer-by-layer stacking, concentric winding, random stacking.
In some embodiments of the present invention, the material of the roller grinder 3 has a mohs hardness of 4 or more and a melting point of 1200 ℃.
In some embodiments of the present invention, as shown in fig. 6, the roller grinder 3 includes a first roller 31 and a second roller 32, at least one of the first roller 31 and the second roller 32 is provided with an annular groove, and a space 33 for rolling the copper foil 1b of the grown graphene film having the finished curl is formed between the first roller 31 and the second roller 32. As shown in fig. 7-14, the shape of the space 33 may be circular, oval, rectangular, fan-shaped, semi-circular, or semi-oval.
In some embodiments of the present invention, as shown in fig. 7 to 10, the first roller 31 is provided with a first groove 311, the second roller 32 is provided with a second groove 321, and the first groove 311 and the second groove 321 have the same shape and size, and can be used to form a circular, oval, fan-shaped or rectangular space 33. As shown in fig. 11-14, the first roller 31 is provided with a first groove 311, the second roller 32 is not provided with a groove, and the shape and size of the first groove 311 determine the shape and size of the space 33, which can be used to form a semicircular, semi-elliptical, fan-shaped or rectangular space 33.
In some embodiments of the present invention, the pressure applied by the roller grinder 3 to the copper foil 1b of the grown graphene film layer after the completion of the curling is in a range of 1bar to 1000 bar.
In some embodiments of the present invention, the rolled copper foil 1c on which the graphene film layer is grown is subjected to press forming and sintering in a vacuum high-temperature environment, wherein the sintering temperature is 200 ℃ to 1100 ℃.
In some embodiments of the present invention, the rolled copper foil 1c on which the graphene film layer is grown is subjected to press forming and sintering in a vacuum high-temperature environment, wherein the vacuum environment is 0.01Pa to 0.01 MPa.
In some embodiments of the present invention, in the press forming and sintering of the rolled copper foil 1c on which the graphene film layer is grown, in a vacuum high-temperature environment, the press forming pressure is 1bar to 1000 bar.
In some embodiments of the present invention, the cross-sectional shape of the highly conductive wire 2 is circular, elliptical, fan-shaped, or rectangular.
In some embodiments of the invention, the cross-sectional area of the copper foil is 5 μm 2 -50cm 2 。
As shown in fig. 5, a second aspect of the present invention provides a system for manufacturing a high-conductivity electric wire, for implementing the method for manufacturing a high-conductivity electric wire in any of the above embodiments, including a chemical vapor deposition apparatus, a curling apparatus, a roller grinder 3, and a sintering apparatus 4, wherein the chemical vapor deposition apparatus is configured to grow a graphene film layer on a surface of a copper foil, the curling apparatus is configured to curl a copper foil 1a of the grown graphene film layer along a continuous direction perpendicular to the copper foil, the roller grinder is configured to roll a copper foil 1b of the grown graphene film layer after the curling is completed, and the sintering apparatus 4 is configured to perform press forming and sintering on the rolled copper foil 1c of the grown graphene film layer. 5 is the rotation direction of the first roller 31, 6 is the rotation direction of the second roller 32, 7 is the preparation direction of the highly conductive wire 2, and the rotation directions of the first roller 31 and the second roller 32 are opposite.
The system for manufacturing the high-conductivity electric wire according to the embodiment of the present invention is used for implementing the method for manufacturing the high-conductivity electric wire according to any one of the embodiments, and the manufactured high-conductivity electric wire 2 has the same beneficial effects, which are not described herein again.
The third aspect of the present invention provides a highly conductive wire 2 obtained by the method for producing a highly conductive wire according to any one of the above embodiments, comprising a copper foil and a graphene film layer continuously grown on the surface of the copper foil by a chemical vapor deposition method.
The high-conductivity wire 2 of the embodiment of the present invention has the same beneficial effects as the high-conductivity wire 2 prepared by the method of any one of the above embodiments, and details are not repeated herein.
The following will describe the method for preparing the high-conductivity wire and the prepared high-conductivity wire 2 provided by the present invention with different embodiments:
example one
As shown in fig. 1, a copper foil having a width of 333 mm, a thickness of 12 μm and a purity of 99.99% was selected and crimped by stacking one on another to prepare an electric wire.
Specifically, the copper foil is fed into a CVD (Chemical Vapor Deposition) apparatus to grow 1 to 3 graphene film layers in a continuous distribution on the surface of the copper foil by a Chemical Vapor Deposition method. The copper foil 1a of the grown graphene film layer is curled into a wire bundle in a layer-by-layer stacking mode, the wire bundle is sent into a roller grinding tool 3 in a preparation system of the high-conductivity electric wire 2 for rolling, the roller grinding tool 3 comprises a first roller 31 and a second roller 32, a first groove 311 on the first roller 31 is semicircular, a second groove 321 on the second roller 32 is semicircular, a circular space 33 is finally formed for rolling the copper foil 1b of the grown graphene film layer which is curled, the pressure applied to the copper foil 1b of the grown graphene film layer which is curled by the roller grinding tool 3 is 100bar, the copper foil is rolled and formed, and the first roller 31 and the second roller 32 are made of alloy steel with the Mohs hardness of 5.5 and the melting point of 1300 ℃ or higher. And (3) feeding the rolled and formed wire harness into a sintering device 4, wherein the sintering temperature is 800 ℃, the vacuum degree of the sintering environment is 1Pa, and the pressure applied to the wire harness during sintering is 90 bar.
After sintering, the cross-sectional area is 4mm 2 The round wire of (2) has a conductivity of 115% to 120% IACS as measured by the Van der Pauw method.
Example two
As shown in FIG. 2, a copper foil having a width of 22mm, a thickness of 18 μm and a purity of 99.9% was selected and wound concentrically from the inside to the outside to prepare an electric wire.
Specifically, the copper foil is fed into a CVD (Chemical Vapor Deposition) apparatus to grow 2 to 5 graphene film layers in a continuous distribution on the surface of the copper foil by a Chemical Vapor Deposition method. The copper foil 1a of the grown graphene film layer is curled into a wire harness from inside to outside, a roller grinding tool 3 in a preparation system of the high-conductivity electric wire 2 is rolled, the roller grinding tool 3 comprises a first roller 31 and a second roller 32, a first groove 311 on the first roller 31 is semicircular, a second groove 321 on the second roller 32 is semicircular, a circular space 33 is finally formed for rolling the copper foil 1b of the grown graphene film layer which is curled, the roller grinding tool 3 applies pressure to the copper foil 1b of the grown graphene film layer which is curled at a pressure of 50bar for rolling and forming, and the first roller 31 and the second roller 32 are made of alloy steel with the Mohs hardness of 6 and the melting point of 1250 ℃ or higher. And (3) feeding the rolled and formed wire harness into a sintering device 4, wherein the sintering temperature is 850 ℃, the vacuum degree of the sintering environment is 5Pa, and the pressure applied to the wire harness during sintering is 60 bar.
After sintering, the cross-sectional area is 10mm 2 The circular wire of (4) has a conductivity of 110% to 120% IACS as measured by van der bauer method.
EXAMPLE III
As shown in FIG. 3, a copper foil having a width of 160mm, a thickness of 25 μm and a purity of 99.5% was selected and crimped by random stacking to prepare an electric wire.
Specifically, the copper foil is fed into a CVD (Chemical Vapor Deposition) apparatus to grow a 3-5-layer graphene film continuously distributed on the surface of the copper foil by a Chemical Vapor Deposition method. The copper foil 1a of the grown graphene film layer is curled into a wire harness from inside to outside, a roller grinding tool 3 in a preparation system of the high-conductivity electric wire 2 is rolled, the roller grinding tool 3 comprises a first roller 31 and a second roller 32, a first groove 311 on the first roller 31 is rectangular, a second groove 321 on the second roller 32 is rectangular, a rectangular space 33 is finally formed for rolling the copper foil 1b of the grown graphene film layer after the curling is completed, the roller grinding tool 3 applies pressure to the copper foil 1b of the grown graphene film layer after the curling is completed and is rolled and molded at 200bar, and the first roller 31 and the second roller 32 are made of alloy steel with the Mohs hardness of 6.5 and the melting point of more than or equal to 1200 ℃. And (3) feeding the rolled and formed wire harness into a sintering device 4, wherein the sintering temperature is 900 ℃, the vacuum degree of the sintering environment is 10Pa, and the pressure applied to the wire harness during sintering is 180 bar.
After sintering, the cross-sectional area is 25mm 2 The round wire of (2) has a conductivity of 110% to 120% IACS as measured by the Van der Pauw method.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (17)
1. A method for preparing a highly conductive wire, comprising:
selecting a continuous copper foil with a specified shape and a specified size as a core layer;
continuously growing a graphene film layer on the surface of the copper foil by a chemical vapor deposition method;
stopping growing according to the required distribution and the required number of layers of the graphene film layer;
controlling the copper foil on which the graphene film layer grows to curl along a continuous direction vertical to the copper foil;
controlling a roller grinding tool to roll the curled copper foil growing the graphene film layer;
under a vacuum high-temperature environment, performing compression molding and sintering on the rolled copper foil with the grown graphene film layer;
and determining that the preparation of the high-conductivity wire is finished according to the press forming and sintering to the required shape and the required size.
2. The method for manufacturing a highly conductive electric wire according to claim 1, wherein the purity of the copper foil is 80 to 99.999%.
3. The method for manufacturing a highly conductive electric wire according to claim 2, wherein the purity of the copper foil is 99% to 99.99%.
4. The method for manufacturing a highly conductive electric wire according to claim 1, wherein the copper foil has a thickness of 1 μm to 1 mm.
5. The method for manufacturing a highly conductive electric wire according to claim 1, wherein the copper foil has a thickness of 5 μm to 100 μm.
6. The method for manufacturing a highly conductive electric wire according to claim 1, wherein in the continuous growth of the graphene film layer on the surface of the copper foil by the chemical vapor deposition method, the graphene film layer is continuously grown on one side or both sides of the copper foil by the chemical vapor deposition method to cover 1 to 10 layers.
7. The method of manufacturing a highly conductive electric wire according to claim 1, wherein in the step of controlling the copper foil on which the graphene film layer is grown to curl in a direction perpendicular to the continuous direction of the copper foil, the copper foil on which the graphene film layer is grown to curl in a direction perpendicular to the continuous direction of the copper foil is controlled by one or more of layer-by-layer stacking, concentric winding, and random stacking.
8. The method for preparing the highly conductive wire according to claim 1, wherein the roller grinder material has a mohs hardness of 4 or more and a melting point of 1200 ℃ or more.
9. The method of claim 1, wherein the roller grinder comprises a first roller and a second roller, at least one of the first roller and the second roller is provided with an annular groove, and a space for rolling the curled copper foil on which the graphene film is grown is formed between the first roller and the second roller.
10. The method for preparing a highly conductive wire according to claim 1, wherein the pressure applied by the roller grinder to the copper foil on which the graphene film layer is grown after the completion of the curling is in a range of 1bar to 1000 bar.
11. The method for manufacturing a highly conductive wire according to claim 1, wherein the copper foil on which the graphene film layer is grown is subjected to press forming and sintering at a sintering temperature of 200 ℃ to 1100 ℃ in the vacuum high temperature environment.
12. The method for manufacturing a highly conductive electric wire according to claim 1, wherein the copper foil on which the graphene film layer is grown is subjected to press forming and sintering in a vacuum high temperature environment, and the degree of vacuum is 0.01Pa to 0.01 MPa.
13. The method for preparing a highly conductive wire according to claim 1, wherein in the step of press-forming and sintering the rolled copper foil on which the graphene film layer is grown in the vacuum high-temperature environment, a press-forming pressure is 1bar to 1000 bar.
14. The method for producing a highly conductive electric wire according to claim 1, wherein the highly conductive electric wire has a cross-sectional shape of a circle, an ellipse, a sector, or a rectangle.
15. The method for producing a highly conductive electric wire according to claim 1, wherein the cross-sectional area of the copper foil is 5 μm 2 -50cm 2 。
16. A manufacturing system of a high-conductivity electric wire for realizing the manufacturing method of the high-conductivity electric wire according to any one of claims 1 to 15, comprising a chemical vapor deposition apparatus for continuously growing a graphene film layer on a surface of a copper foil, a curling apparatus for curling the copper foil on which the graphene film layer is grown in a direction perpendicular to a continuous direction of the copper foil, a rolling apparatus for rolling the copper foil on which the graphene film layer is grown after completion of curling, and a sintering apparatus for press-forming and sintering the rolled copper foil on which the graphene film layer is grown.
17. A highly conductive electric wire obtained by the method for producing a highly conductive electric wire according to any one of claims 1 to 15, comprising a copper foil and a graphene film layer continuously grown on the surface of the copper foil by a chemical vapor deposition method.
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