CN114813751A - Method and device for detecting surface layer defects of silicon carbide crystal ingot - Google Patents
Method and device for detecting surface layer defects of silicon carbide crystal ingot Download PDFInfo
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Abstract
The invention discloses a method and a device for detecting defects of a surface layer of a silicon carbide crystal ingot, wherein the method comprises the following steps: placing a silicon carbide ingot on a stage; laser beams with preset wavelengths irradiate the carbon surface, the silicon surface and the side surface of the silicon carbide crystal ingot through a reflecting prism; collecting reflected light of the silicon carbide ingot by using a photosensitive unit; developing the signal of the reflected light by a developing device, and judging whether the surface of the silicon carbide crystal ingot has defects according to the developed signal; wherein the developing device includes a developing carrier that contacts the photosensitive unit. The method and the device for detecting the defects of the surface layer of the silicon carbide crystal ingot can improve the detection accuracy and the detection efficiency of the silicon carbide crystal ingot.
Description
Technical Field
The invention belongs to the technical field of appearance measurement, and particularly relates to a method and a device for detecting surface defects of a silicon carbide ingot.
Background
During the growth of the silicon carbide crystal ingot, the poor adaptability of the growth system can cause the silicon carbide crystal ingot to generate a plurality of crystal defects, structural defects and the like, such as dislocation, micropipe, inclusion, crack, phase change or void, and the defects can seriously restrict the use of the crystal ingot. Therefore, although it is necessary to inspect the silicon carbide ingot before the silicon carbide ingot is used, it is difficult to completely inspect the minute defects on the surface layer of the silicon carbide ingot by visual inspection, and the inspection method such as atomic force microscopy takes a long time and the inspection efficiency is low.
Therefore, it is important to provide a method and an apparatus for detecting defects of silicon carbide ingots with accurate and efficient detection structure.
Disclosure of Invention
The invention aims to provide a method and a device for detecting surface defects of a silicon carbide crystal ingot.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention provides a method for detecting defects of a surface layer of a silicon carbide crystal ingot, which comprises the following steps:
placing a silicon carbide ingot on a stage;
laser beams with preset wavelengths irradiate the carbon surface, the silicon surface and the side surface of the silicon carbide crystal ingot through a reflecting prism;
collecting reflected light of the silicon carbide ingot by using a photosensitive unit; and
developing the signal of the reflected light by a developing device, and judging whether the surface of the silicon carbide crystal ingot has defects according to the developed signal;
wherein the developing device includes a developing carrier that contacts the photosensitive unit.
In an embodiment of the invention, the laser beam includes one or more of single-wavelength lasers with preset wavelength between 350 nm and 650 nm.
In an embodiment of the invention, the power of the single-wavelength laser is 30-500 mW.
In an embodiment of the present invention, the single wavelength laser light sequentially irradiates the surface of the silicon carbide ingot through the reflective triple prism.
Another object of the present invention is to provide an apparatus for detecting defects in a surface layer of a silicon carbide ingot, comprising:
an object stage for placing a silicon carbide ingot;
the laser emission unit is arranged on one side of the objective table;
the reflecting prism and the laser emission unit are arranged on the same side of the objective table;
the photosensitive unit and the laser emission unit are arranged on the same side of the objective table, and are positioned on two sides of the reflective prism; and
the developing device is connected with the photosensitive unit;
wherein the developing device includes a developing carrier that contacts the photosensitive unit.
In an embodiment of the present invention, the reflective triple prism and the laser emitting unit are located in the same plane.
In an embodiment of the present invention, an angle range of the laser beam emitted by the laser emitting unit to be incident into the reflective prism is-30 to 30 °.
In an embodiment of the present invention, the photosensitive unit includes a photosensitive material, and the photosensitive material includes any one of an organic photosensitive drum, an amorphous silicon photosensitive drum, a cadmium sulfide photosensitive drum, a selenium photosensitive drum, or a zinc oxide photosensitive drum.
In an embodiment of the present invention, the developing device includes a developer cartridge, the developer cartridge includes a developer, and the developer includes any one of p-methylaminophenol sulfate, hydroquinone, carbon powder, or ink.
In an embodiment of the present invention, the developer carrier is disposed between the photosensitive unit and the developer cartridge.
In summary, the present invention provides a method and an apparatus for detecting defects on the surface layer of a silicon carbide ingot, which have a fast detection speed, do not cause irreversible damage to a seed crystal, and do not cause damage to human eyes. The detection accuracy is high, the surface layer appearances of the carbon surface, the silicon surface and the side surface of the silicon carbide crystal ingot are described in detail, the silicon carbide crystal ingot growth process can be effectively fed back, the silicon carbide crystal ingot with fatal defects is screened in advance, and the loss caused by ineffective processing in the later period is avoided to the greatest extent. The processing yield is improved, and the method has good application value.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of an apparatus for detecting defects in the surface layer of a silicon carbide ingot in accordance with an embodiment.
Fig. 2 is a partially enlarged view of fig. 1.
FIG. 3 is a flow chart of a method for detecting defects in a surface layer of a silicon carbide ingot in an embodiment.
Description of the reference symbols:
1, a detection device; 10 an object stage; 11 a silicon carbide ingot; 12 a laser emitting unit; 13 a reflective prism; 14 a light sensing unit; 15 a developing device; 16 a developer cartridge; 17 developing the carrier; S11-S14.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the features in the following embodiments and examples may be combined with each other without conflict. It is also to be understood that the terminology used in the examples is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention.
When numerical ranges are given in the examples, it is understood that both endpoints of each of the numerical ranges and any number between the two endpoints are optional unless otherwise specified in the invention. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs and the description of the present invention, and any methods, apparatuses, and materials similar or equivalent to those described in the examples of the present invention may be used to practice the present invention.
In addition, in the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
With the development of semiconductor technology, third-generation semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) have many excellent physical properties, such as large forbidden bandwidth, high thermal conductivity, high breakdown field strength, high electron saturation drift rate and the like, and the prepared semiconductor device has the characteristics of small volume, ultrahigh switching frequency, ultrahigh voltage operation, high device stability at high temperature and the like. Therefore, silicon carbide or gallium nitride is an excellent material for manufacturing high-voltage, high-temperature or radiation-resistant power semiconductor devices.
The ingot quality of silicon carbide or gallium nitride directly affects the performance of the prepared semiconductor device, taking silicon carbide ingot as an example, the Physical Vapor Transport (PVT) method is generally adopted for growth at present, and the appearance and the crystallization quality of the grown ingot are affected by the temperature uniformity of seed crystal, the silicon-carbon ratio of gas phase components, the flow rate of Transport gas, the impurity content of raw materials and other factors. Defects such as dislocations, micropipes, inclusions, cracks, phase transitions or voids are generated, which severely restrict the performance of the silicon carbide substrate epitaxial device and even lead to premature breakdown of the semiconductor device. The invention provides a method and a device for detecting defects on the surface layer of a silicon carbide crystal ingot. The detection method has the advantages of rapidness, accuracy and no damage to the silicon carbide crystal ingot. The method can be widely applied to detection of other types of crystal ingots, can evaluate the growing method of the crystal ingots, and can also evaluate the quality of the crystal ingots and screen and grade the crystal ingots.
Referring to fig. 1, in one embodiment of the present invention, the inspection apparatus 1 includes a stage 10, and a silicon carbide ingot 11 is placed on the stage 10 in the inspection apparatus 1. After the silicon carbide ingot is grown, it may be processed into a shape for subsequent use by simple processing such as cleaning, cutting or grinding, and then tested. The grown silicon carbide crystal ingot can also be directly tested without treatment to detect the defects possibly existing in the growth process of the silicon carbide crystal ingot, and sample preparation can be specifically carried out according to the detection purpose. After completion of the sample preparation, silicon carbide ingot 11 is placed on stage 10, and silicon carbide ingot 11 is placed in the center of stage 10. A fixing device (not shown) is disposed on the stage 10, and the fixing device is, for example, a slot or a fixing clip, and ensures that the fixing device does not damage the silicon carbide ingot 11, so as to fix the silicon carbide ingot 11, prevent the silicon carbide ingot 11 from shifting during the test process and causing the test result deviation, and ensure the accuracy of the test result. In other embodiments, the detection device provided by the invention can also detect surface layer defects of ingots such as gallium nitride (GaN), monocrystalline silicon (Si), monocrystalline germanium (Ge) or gallium arsenide (GaAs).
Referring to fig. 1, in an embodiment of the invention, the detecting device 1 further includes a laser emitting unit 12, the laser emitting unit 12 is disposed at one side of the object stage 10 and above the object stage 10, and an orthographic projection of the laser emitting unit 12 on a plane of the object stage 10 is outside the object stage 10. In this embodiment, the laser beam emitted by the laser emitting unit 12 is, for example, one or more of single-wavelength lasers with a preset wavelength between 350 nm and 650nm, that is, the laser emitting unit 12 includes a plurality of laser emitters, and the types of the lasers emitted by the laser emitters are different, the laser emitting unit 12 includes one or more of laser emitters emitting red laser (650nm), yellow laser (577nm), green laser (520nm), blue laser (445nm), or violet laser (375nm), and the power of the single laser is, for example, 30 to 500 mW. During the test, the laser beam generated by the laser emitting unit 12 is irradiated to the surface of the silicon carbide ingot 11 through the reflective triple prism 13, the surface of the silicon carbide ingot 11 is irradiated with laser beams having different wavelengths, for example, the carbon face (C face), the silicon face (Si face), the side faces, and the like of the silicon carbide ingot, and the different surfaces of the silicon carbide ingot 11 are inspected to analyze the surface layer defects of the silicon carbide ingot 11 as a whole. In the irradiation process, only single-wavelength laser irradiates the silicon carbide crystal ingot 11 each time, the laser with each wavelength is adopted to irradiate the surface of the silicon carbide crystal ingot 11 in sequence, and information carried by the surface of the silicon carbide crystal ingot 11 is analyzed. In the test process, the stronger the laser power, the deeper the detectable depth of the surface layer of the silicon carbide crystal ingot 11, the longer the laser wavelength and the deeper the detection depth of the silicon carbide crystal ingot 11, and the different depths of the silicon carbide crystal ingot 11 can be detected by adjusting the wavelength and the power of the laser beam. The detection device has wide applicability and can detect different depths of different crystal ingots.
Referring to fig. 1 to 2, in an embodiment of the present invention, the detecting device 1 further includes a reflective prism 13, that is, the laser beam is emitted from the laser emitting unit 12 and does not directly irradiate the silicon carbide ingot 11, and the laser beam passes through the reflective prism 13 and then irradiates the silicon carbide ingot 11. Wherein, reflection prism 13 is set up in the top of objective table 10, and reflects the orthographic projection of prism 13 in the plane of objective table 10 on objective table 10, and simultaneously, reflects the orthographic projection of prism 13 in the plane of objective table 10 and does not fall the central point of objective table 10, and reflection prism 13 is not located directly over carborundum ingot 11. The reflective triangular prism 13 is located in the same plane as the laser emitting unit 12, i.e., the laser light emitted by the laser emitting unit 12 enters the reflective triangular prism 13. In the embodiment, the laser emitted by the laser emitting unit 12 is set to enter the reflective triangular prism 13 within a preset angle range, and the laser beam enters the reflective triangular prism 13 within an angle range of-30 to 30 degrees, for example, based on the same plane where the reflective triangular prism 13 and the laser emitting unit 12 are located, and during the detection process, the incident positive and negative angles are equal in value. Here, an angle located above the same plane where the triangular reflecting prism 13 and the laser emitting unit 12 are located is referred to as a positive angle, and an angle located below the same plane where the triangular reflecting prism 13 and the laser emitting unit 12 are located is referred to as a negative angle. That is, after the laser light with a single wavelength is emitted into the reflective triple prism 13 within a predetermined angle range, the emission angles of the laser light refracted by the reflective triple prism 13 are different, and the refracted laser light may be irradiated from one end to the other end of the surface of the silicon carbide ingot 11, thereby reflecting the surface defects of the silicon carbide ingot 11 as a whole. Through setting up the reflection prism, can carry out full test to the surface of carborundum ingot, and test operation is simple.
Referring to fig. 1, in an embodiment of the present invention, a laser emitting unit 12 sequentially emits laser light of different wavelengths, which have different transmittances with respect to a silicon carbide ingot 11, to analyze the silicon carbide ingot 11. Among them, for example, red light can be used for discriminating macroscopic defects such as pits or large-area micropipes which may exist in the surface layer of silicon carbide ingot 11, green light can be used for detecting cracks which may exist in the surface layer of silicon carbide ingot 11 and lattice distortion defects such as voids which may exist in the surface layer of silicon carbide ingot 11, and violet light can be used for discriminating phase transition which may exist in the surface layer of silicon carbide ingot 11 and the like. By adjusting the wavelength and the power combination of the laser beam, collecting surface morphology signals of the silicon carbide crystal ingot 11 detected by the laser with different power wavelengths, the defects of cracks, microtubes, hexagonal cavities or phase change and the like possibly existing on the surface of the silicon carbide crystal ingot 11 can be represented and imaged. By analyzing the surface defects of the silicon carbide crystal ingot, the silicon carbide crystal ingot with fatal defects is intercepted, so that the phenomenon that the silicon carbide crystal ingot flows to subsequent processing to cause ineffective processing and cause reduction of the processing yield is avoided.
Referring to fig. 1, in one embodiment of the present invention, a light sensing unit 14 collects reflected light of a laser beam passing through a silicon carbide ingot 11. Wherein, the photosensitive unit 14 and the laser emission unit 12 are arranged on the same side of the object stage 10, the photosensitive unit 14 is arranged on the other side of the laser emission unit 12 relative to the reflective prism 13, and the orthographic projection of the photosensitive unit 14 on the plane of the object stage 10 is on the outer side of the object stage 10. In the present embodiment, the photosensitive unit 14 includes a photosensitive roller and a photosensitive material provided on the photosensitive roller, and the photosensitive material includes, for example, any one of an organic photosensitive drum (OPC), an amorphous silicon photosensitive drum, a cadmium sulfide photosensitive drum, a selenium photosensitive drum, a zinc oxide photosensitive drum, or the like. Reflected light of the silicon carbide ingot 11 to the laser beam is collected by the light sensing unit 14, and a signal of the reflected light is developed by the developing device 15, thereby analyzing a possible defect of the silicon carbide ingot 11.
Referring to fig. 1, in an embodiment of the present invention, developing device 15 represents signals of reflected light collected by photosensitive unit 14 to develop test results of silicon carbide ingot 11. Wherein the developing device 15 includes a developer cartridge 16 and a developer carrier 17, and the developer is disposed in the developer cartridge 16. In the present embodiment, the developer includes any one of p-methylaminophenol sulfate (metol), hydroquinone (dinoni), toner, ink, or the like, for example, and the developing carrier 17 is printing paper or the like, for example. In the testing process, the developing carrier 17 contacts the photosensitive material in the photosensitive unit 14, the developer with charges is adsorbed on the developing carrier 17 due to charge attraction, finally the surface morphology of the silicon carbide crystal ingot 11 is displayed on the developing carrier 17, and the morphology structure of the surface morphology of the silicon carbide crystal ingot 11 can be fixed on the developing carrier 17 after heating and shaping. In the detection process, different defect types have different appearances on the development carrier 17, for example, when the surface layer of the silicon carbide crystal ingot 11 has cracks, stripes are displayed at corresponding positions on the development carrier 17, and for example, when the surface layer of the silicon carbide crystal ingot 11 has hollow defects, blank stripes and the like are displayed at corresponding positions on the development carrier 17. Different defects possibly existing on the surface layer of the silicon carbide crystal ingot 11 are displayed on the developing carrier 17 in different expression forms, and the positions and the number of the defects possibly existing in the silicon carbide crystal ingot 11 can be intuitively known according to the developing carrier 17. The detection device avoids the damage of reflected laser to human eyes when the surface layer of the silicon carbide crystal ingot is observed by directly using laser through development imaging, and can also avoid other damage detections, such as irreversible damage to the silicon carbide crystal ingot caused by molten potassium hydroxide corrosion and other modes. And different lasers can represent different surface layer defects of the silicon carbide crystal ingot, the surface layer morphology of the silicon carbide crystal ingot can be described in detail, and the method has important feedback value for process improvement.
Referring to fig. 3, in an embodiment of the present invention, a method for detecting defects on a surface layer of a silicon carbide ingot is provided, the method uses the above-mentioned detection apparatus, and the detection method is simple, does not damage the silicon carbide ingot, and improves the detection efficiency, and the detection method includes steps S11-S14.
And S11, placing the silicon carbide crystal ingot on the objective table.
And S12, irradiating the surface of the silicon carbide crystal ingot with laser beams.
And S13, collecting the reflected light of the silicon carbide crystal ingot by using a light sensing unit.
And S14, developing the signal of the reflected light through a developing device.
Referring to fig. 1, in an embodiment of the present invention, a silicon carbide ingot 11 is fixed at the center of a stage 10, and a laser emitting unit 12 sequentially emits red laser light having a wavelength of 650nm, green laser light having a wavelength of 520nm, blue laser light having a wavelength of 445nm, and violet laser light having a wavelength of 375 nm. The emergent laser enters the reflective prism 13 within the range of-20 to 20 degrees. The refracted laser light is sequentially irradiated from one side of the silicon carbide ingot 11 to the other side of the silicon carbide ingot 11 via the reflective prism 13, the laser light is reflected on the silicon carbide ingot 11, and the reflected light is irradiated on the photosensitive unit 14, wherein the photosensitive material is a selenium photosensitive drum. The surface layer morphology of the silicon carbide crystal ingot 11 is developed by a developing device 15, and a structure diagram of the surface layer morphology structure of the silicon carbide crystal ingot 11 is formed on a developing carrier 17 by charge attraction with methylaminophenol sulfate as a developer. And determining possible defects in the silicon carbide crystal ingot 11 by analyzing the structure diagram of the surface layer morphology structure of the silicon carbide crystal ingot 11, and judging the defects to determine whether to carry out subsequent processes or rework the silicon carbide crystal ingot.
Referring to fig. 1, in another embodiment of the present invention, an ingot 11 to be measured is fixed at a central position of an object stage 10, and a laser emitting unit 12 sequentially emits a red laser having a wavelength of 650nm and a power of 200mW, a green laser having a wavelength of 520nm and a power of 260mW, and a violet laser having a wavelength of 375nm and a power of 100 mW. The emergent laser enters the reflective prism 13 within the range of-25 to 25 degrees. The refracted laser light is sequentially irradiated from one side of the silicon carbide ingot 11 to the other side of the silicon carbide ingot 11 via the reflective prism 13, the laser light is reflected on the silicon carbide ingot 11, and the reflected light is irradiated on the photosensitive unit 14, wherein the photosensitive material is an organic photosensitive drum. The surface morphology of the silicon carbide crystal ingot 11 is developed through a developing device 15, and the developer is carbon powder. The carbon powder is developed on the developing carrier 17 under the action of electric charge attraction, and the morphology structure of the surface layer of the silicon carbide crystal ingot 11 is shown on the developing carrier 17 after heating and shaping. The power of the laser is selected to determine possible defects in the deep layer of the silicon carbide crystal ingot 11, the defects are judged, and the defect depth is determined.
Referring to fig. 1, in another embodiment of the present invention, silicon carbide ingot 11 is fixed at the center of stage 10, and laser emitting unit 12 sequentially emits red laser light having a wavelength of 650nm and a power of 330mW, green laser light having a wavelength of 520nm and a power of 320mW, and violet laser light having a wavelength of 375nm and a power of 120 mW. The emergent laser enters the reflective prism 13 within the range of-25 to 25 degrees. The refracted laser light is sequentially irradiated from one side of the silicon carbide ingot 11 to the other side of the silicon carbide ingot 11 via the reflective prism 13, the laser light is reflected on the silicon carbide ingot 11 to be treated, and the reflected light is irradiated on the photosensitive unit 14, wherein the photosensitive material is a zinc oxide photosensitive drum. The surface morphology of the silicon carbide crystal ingot 11 is developed by a developing device 15, and the developer is hydroquinone. After development and shaping, the surface morphology structure of the silicon carbide crystal ingot 11 is shown on the development carrier 17. By selecting laser with higher power for detection, the apparent morphology of the silicon carbide crystal ingot with high doped foreign elements can be analyzed.
In summary, the present invention provides a method and an apparatus for detecting surface defects of a silicon carbide ingot, which visually analyze the surface defects of the silicon carbide ingot by transferring the surface topography of the silicon carbide ingot to a developing carrier. The detection speed is high, irreversible damage to the silicon carbide crystal ingot can be avoided, and meanwhile damage to human eyes can be avoided. The accuracy of detection is higher, describes the appearance of the surface layer of the silicon carbide crystal ingot in detail, can effectively feed back the growth process of the silicon carbide crystal ingot, screens the silicon carbide crystal ingot with fatal defects in advance, and greatly avoids the loss caused by ineffective processing in the later period. The processing yield is improved, and the method has good application value.
The embodiments of the invention disclosed above are intended merely to aid in the explanation of the invention. The examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A method for detecting defects on the surface layer of a silicon carbide crystal ingot is characterized by comprising the following steps:
placing a silicon carbide ingot on a stage;
laser beams with preset wavelengths irradiate the carbon surface, the silicon surface and the side surface of the silicon carbide crystal ingot through a reflecting prism;
collecting reflected light of the silicon carbide ingot by using a photosensitive unit; and
developing the signal of the reflected light by a developing device, and judging whether the surface of the silicon carbide crystal ingot has defects according to the developed signal;
wherein the developing device includes a developing carrier that contacts the photosensitive unit.
2. The method as set forth in claim 1 wherein the laser beam comprises one or more of a single wavelength laser having a predetermined wavelength of between 350 and 650 nm.
3. The method of claim 2 wherein the single wavelength laser has a power of 30 to 500 mW.
4. The method of claim 2 wherein the single wavelength laser light sequentially irradiates the surface of the silicon carbide ingot through the reflective triple prism.
5. An apparatus for detecting surface defects of a silicon carbide ingot, comprising:
an object stage for placing a silicon carbide ingot;
the laser emission unit is arranged on one side of the objective table;
the reflecting prism and the laser emission unit are arranged on the same side of the objective table;
the photosensitive unit and the laser emission unit are arranged on the same side of the objective table, and are positioned on two sides of the reflective prism; and
the developing device is connected with the photosensitive unit;
wherein the developing device includes a developing carrier that contacts the photosensitive unit.
6. The apparatus of claim 5 wherein the reflective triangular prism is located in the same plane as the laser emitting unit.
7. The apparatus as set forth in claim 5 wherein the laser beam emitted from the laser emitting unit is incident on the reflective triangular prism at an angle ranging from-30 ° to 30 °.
8. The apparatus of claim 5 wherein the photosensitive cell comprises a photosensitive material, and the photosensitive material comprises any one of an organic photosensitive drum, an amorphous silicon photosensitive drum, a cadmium sulfide photosensitive drum, a selenium photosensitive drum, or a zinc oxide photosensitive drum.
9. The apparatus of claim 5 wherein the developing device comprises a developer cartridge containing a developer comprising any one of p-methylaminophenol sulfate, hydroquinone, carbon powder, or ink.
10. The apparatus of claim 9, wherein the developer carrier is disposed between the photosensitive unit and the developer cartridge.
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| CN115502884A (en) * | 2022-11-24 | 2022-12-23 | 苏州优晶光电科技有限公司 | Silicon carbide ingot outer diameter grinding control system and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115502884A (en) * | 2022-11-24 | 2022-12-23 | 苏州优晶光电科技有限公司 | Silicon carbide ingot outer diameter grinding control system and method |
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