CN114792615A - Substrate mounting table and substrate processing method - Google Patents
Substrate mounting table and substrate processing method Download PDFInfo
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- CN114792615A CN114792615A CN202210046574.7A CN202210046574A CN114792615A CN 114792615 A CN114792615 A CN 114792615A CN 202210046574 A CN202210046574 A CN 202210046574A CN 114792615 A CN114792615 A CN 114792615A
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- mounting surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Chemical & Material Sciences (AREA)
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- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a substrate mounting table and a substrate processing method. The substrate mounting table of the present invention includes: a mounting table main body having a mounting surface on which a substrate is mounted; a plurality of holes formed in the table main body in a vertical direction, the plurality of holes being open to the mounting surface; a plurality of support bodies, which are respectively arranged in each hole of the plurality of holes and are used for supporting the substrate to move between the carrying surface and the position above the carrying surface; a temperature adjusting unit for adjusting the temperature of the mounting table body and the support body; a lifting mechanism for lifting each support body; and an elastic member provided to each support body so that a longitudinal length of each support body can be changed by deformation, and configured to be able to place the substrate on the placement surface and bias the substrate upward by each support body after the lifting of the lifting mechanism is stopped. According to the present invention, the substrate can be placed on the placing table so that the process with high uniformity can be performed in the surface of the substrate.
Description
Technical Field
The present invention relates to a substrate mounting table and a substrate processing method.
Background
In a manufacturing process of a Flat Panel Display (FPD), various processes such as etching are performed on a substrate in a processing chamber formed in a vacuum atmosphere. The substrate is processed in a state where the substrate is placed on a mounting table configured to be capable of adjusting the temperature of the substrate. The mounting table includes a plurality of lift pins that can be raised and lowered while supporting the substrate in order to transfer the substrate to and from the transfer mechanism. For example, patent document 1 describes a processing apparatus including: in order to improve the uniformity of the electromagnetic field of the plasma, when the plasma processing is performed on the substrate, the front end of the lift pin is controlled to be positioned below 70-130 μm relative to the back surface of the substrate on the carrying table.
Documents of the prior art
Patent literature
Patent document 1: japanese patent laid-open No. 2007 and 273685.
Disclosure of Invention
Problems to be solved by the invention
The present invention provides a technique capable of mounting a substrate on a mounting table in a manner that enables a process having high uniformity to be performed in the plane of the substrate.
Means for solving the problems
The substrate mounting table of the present invention includes:
a mounting table main body having a mounting surface on which a substrate is mounted;
a plurality of holes formed in the table main body in a vertical direction, the plurality of holes being open in the mounting surface;
a plurality of support bodies, each of which is provided in each of the plurality of holes, for supporting the substrate to move the substrate between the mounting surface and a position above the mounting surface;
a temperature adjusting unit for adjusting the temperature of the mounting table body and the support body;
a lifting mechanism for lifting each support body; and
and an elastic member provided to each of the support bodies so that a longitudinal length of each of the support bodies can be changed by deformation, the elastic member being capable of placing the substrate on the placement surface and biasing the substrate upward by each of the support bodies after the lifting and lowering of the lifting and lowering mechanism are stopped.
Effects of the invention
According to the present invention, the substrate can be placed on the placing table so that the process with high uniformity can be performed in the surface of the substrate.
Drawings
Fig. 1 is a longitudinal sectional side view of an etching apparatus including a stage for a substrate according to an embodiment of the present invention.
Fig. 2 is a vertical sectional view of a surface portion of the mounting table.
Fig. 3 is a perspective view of an upper end portion of a lift pin provided on the mounting table.
Fig. 4 is a longitudinal sectional view of a surface portion of a mounting table for a substrate in a comparative example.
Fig. 5 is an explanatory diagram showing a process performed in the etching apparatus.
Fig. 6 is an explanatory diagram showing a process performed in the etching apparatus.
Fig. 7 is an explanatory diagram showing a process performed in the etching apparatus.
Fig. 8 is a graph showing the results of the evaluation test.
Description of the reference numerals
3 placing table
30 mounting table main body
36 carrying surface
37 through hole
5 lifting mechanism
6 lifting pin
61 spring
Detailed Description
A substrate processing apparatus 1 provided with a mounting table 3 as one embodiment of the substrate mounting table of the present invention will be described with reference to a vertical sectional view of fig. 1. The substrate processing apparatus 1 performs a plasma etching process on a rectangular glass substrate G for FPD production. The substrate processing apparatus 1 includes a metal grounded processing container 11, and a transfer port 13 for a substrate G opened and closed by a shutter 12 is provided in a side wall of the processing container 11. An exhaust port 14 opens at the lower side of the processing container 11, and the exhaust port 14 is connected to a vacuum exhaust unit 15 constituted by a vacuum pump or the like via an exhaust pipe. The inside of the processing container 11 is evacuated by the vacuum evacuation unit 15 through the evacuation port 14 to have a vacuum atmosphere of a desired pressure.
The mounting table 3 is provided at the bottom of the processing container 11. The mounting table 3 is configured to uniformly perform a process with high uniformity at the temperature of each portion in the surface of the substrate G when the substrate G is processed, and its detailed configuration will be described later. A spiral inductive coupling antenna 21 is provided above the processing chamber 11 so as to face the mounting table 3 through a window member made of a metal also serving as a shower head 24 described later. A generation source power supply 22 for generating plasma is connected to the inductively coupled antenna 21 via a matching unit 23. When high-frequency power is supplied from the generation source power source 22 to the inductive coupling antenna 21, an electric field for plasma formation is generated in the processing chamber 11, and the processing gas supplied into the processing chamber 11 is converted into plasma. In this case, the shower head and the window member may be provided separately.
A shower head 24, which is also a window member made of metal, is provided below the inductively coupled antenna 21. The shower head 24 seals the upper portion of the processing chamber 11 via an insulating portion 25, and includes a plurality of gas ejection holes 26 opening to the stage 3. The shower head 24 is connected to a process gas supply source 27 via a pipe. The shower head 24 is suspended and supported by a suspension member, not shown, from a ceiling portion of an antenna chamber, not shown, provided above the processing chamber 11 and accommodating the inductively coupled antenna 21.
Next, the mounting table 3 will be described with reference to fig. 2 in which a surface layer portion thereof is enlarged. The mounting table 3 includes an electrostatic chuck 31, a base 32, a flow path forming portion 33, an insulating layer 34, a cover 35, a lift mechanism 5, and lift pins 6. Among these components, the electrostatic chuck 31, the base 32, the flow path forming portion 33, and the cover 35 constitute a mounting table main body 30 formed in a rectangular column shape. The flow path forming section 33, the base 32, and the electrostatic chuck 31 are stacked in this order upward to form a stacked body, and the side periphery of the stacked body is surrounded by a cover 35 serving as an insulating member, thereby constituting the mounting table main body 30. The upper surface of the electrostatic chuck 31 constitutes a mounting surface 36 for the substrate G.
The base 32 and the flow path forming portion 33 are made of metal, and constitute an electrode connected to the bias power supply 29 via the matching unit 28. By the supply of electric power from the bias power supply 29 to the susceptor 32 and the flow path forming section 33, a potential difference is generated between the plasma and the mounting surface 36, and ions constituting the plasma generated in the processing chamber 11 are attracted to the substrate G mounted on the mounting surface 36. An insulating layer 34 is provided below the flow path forming portion 33 and the cover 35, and the flow path forming portion 33 is insulated from the bottom of the processing chamber 11.
The electrostatic chuck 31 and the base 32 are formed with a through hole 37 penetrating through these members in the vertical direction, more specifically, in the vertical direction. Therefore, the upper end of the through hole 37 opens on the mounting surface 36 of the electrostatic chuck 31. The through holes 37 are formed at intervals in the lateral direction. Further, in the flow path forming portion 33, a plurality of through holes 16 penetrating the flow path forming portion 33 in the vertical direction are also formed at intervals in the lateral direction, and a guide member 38 is provided in each of the through holes 16. The guide member 38 is configured as a standing cylinder. In the figure, 41 is an O-ring for sealing a gap between the outer peripheral surface of the lower portion of the guide member 38 and the peripheral surface of the flow path forming portion 33 where the through hole 16 is formed.
The through hole 17 of the cylindrical guide member 38 and the through hole 37 overlap each other, and the lift pin 6 is provided so as to be inserted into the through hole 17 and the through hole 37 of the guide member 38. Accordingly, the plurality of lift pins 6 are provided on the mounting table 3 in accordance with the number of the through holes 37 and the guide members 38. The lift pin 6 is roughly described as an elongated column extending in the vertical direction, and the lower side thereof penetrates the bottom of the processing container 11 and is connected to the lift mechanism 5 provided outside the processing container 11. Each of the lift pins 6 can be vertically lifted and lowered by the lift mechanism 5 while supporting the substrate G horizontally. The upper end portions of the lift pins 6 are accommodated in the through holes 37 (accommodated in the table 3) except when the substrate G is transferred between the not-shown conveying mechanism and the table 3. In the figure, the lifting mechanism 5 is depicted as a structure in which all the lifting pins 6 are lifted and lowered simultaneously, but may be a structure in which each lifting pin 6 is lifted and lowered individually.
In fig. 39, an O-ring is provided on the inner peripheral surface of the guide member 38, and seals a gap between the inner peripheral surface and the side peripheral surface of the lifter pin 6. The O-ring 39 and the O-ring 41 define a region through which a heat conductive gas described later flows, thereby preventing leakage to the outside of the processing container 11. Further, the lower side of the lift pin 6 is surrounded by the bellows 42. The bellows 42 connects the opening of the processing container 11 to a flange 43 provided on the lower side of the lift pin 6, and ensures airtightness of the processing container 11. The lift pin 6 as a support for the substrate G will be described in further detail below.
Further, the mounting table main body 30 is formed with a plurality of gas flow paths 40 extending upward from the lower portion of the base 32, and the upper ends of the gas flow paths 40 open to the mounting surface 36 of the electrostatic chuck 31. The lower side of the gas flow path 40 extends in the lateral direction in the flow path forming portion 33, and is connected to the through hole 37 through a gap formed between the upper side of the guide member 38 and the base 32 and the flow path forming portion 33. A supply source 51 of a heat conductive gas such as helium is connected to the gas flow path 40, and the temperature-adjusted heat conductive gas is supplied from the supply source 51. As described above, since the gas flow path 40 is connected to the through hole 37, the heat transfer gas is supplied to the mounting surface 36 of the electrostatic chuck 31 through the gas flow path 40, and also to the gap between the lift pin 6 and the peripheral surface of the through hole 37, and is supplied to the mounting surface 36 through the gap. The temperature of the heat conductive gas supplied to each portion is lower than the temperature of the plasma formed in the processing container 11, and the heat conductive gas has a function of cooling the substrate G.
A fluid flow channel 44 is formed inside the flow channel forming portion 33. A cooling unit 45 for adjusting the temperature of the fluid is connected to the flow path 44, and a circulation passage of the fluid is formed by the flow path 44 and the cooling unit 45. The fluid whose temperature has been adjusted by the cooling unit 45 to a desired temperature is supplied to the upstream side of the flow path 44, and the temperature of the mounting table main body 30 is adjusted by heat exchange. Then, the fluid is supplied from the downstream side of the flow path 44 to the cooling unit 45, is temperature-adjusted again, and is supplied to the flow path 44. The fluid thus circulated functions as a cooling medium for cooling the substrate G heated by the plasma. The flow path 44, the cooling unit 45, the gas flow path 40, and the heat conductive gas supply source 51 constitute a temperature adjustment unit, and the gas flow path 40 and the heat conductive gas supply source 51 constitute a gas supply unit.
The electrostatic chuck 31 includes an insulating layer 47 having the mounting surface 36 and an electrode 48 embedded in the insulating layer 47, and the electrode 48 is connected to a dc power supply 49. When plasma is formed, a dc voltage is applied from the dc power supply 49 to the electrode 48, so that an electrostatic attraction is generated between the electrode 48 and the substrate G via the insulating layer 47, and the substrate G is attracted to the mounting surface 36. As schematically shown in fig. 2, the mounting surface 36 has minute irregularities. Thereby, the back surface of the substrate G is brought into contact with and adsorbed by the convex portions constituting the irregularities. In addition, the irregularities are not inevitably formed in the manufacturing process of the electrostatic chuck 31 but formed according to design, and the height H1 of the convex portion shown in fig. 2 is, for example, 1 μm to 100 μm. The heat conductive gas supplied from the gas flow path 40 to the mounting surface 36 flows through the gap between the back surface of the substrate G and the concave portion forming the unevenness, and is supplied over the entire surface of the substrate G.
The lifter pin 6 will be further described with reference to fig. 3, which is a perspective view of an upper end portion. The lift pin 6 includes a spring 61 as an elastic member, and the vertical length of the lift pin 6 is changed by expansion and contraction (deformation) of the spring 61. When the substrate G is attached to the electrostatic chuck 31 and plasma processing is performed, the upper end of the lift pin 6 comes into contact with the back surface of the substrate G, and the substrate G is biased upward by the restoring force of the compressed spring 61. As described in detail later, this state improves the uniformity of the temperature distribution in the surface of the substrate G. In this state, the up-and-down movement of the up-and-down pin 6 by the up-and-down mechanism 5 is stopped.
The lift pin 6 includes a pin body 62 and a pin head 71 provided above the pin body 62. The pin body portion 62 includes a trunk portion 63, a head guide portion 64, and a spring guide portion 65. The trunk portion 63 is an elongated round bar, and a head guide portion 64 is formed by extending a center portion of an upper end surface of the trunk portion 63 vertically upward. The head guide 64 is formed in a vertically upright cylindrical shape and has a vertically long shape. The center portion of the upper end surface of the head guide portion 64 protrudes vertically upward, thereby forming a spring guide portion 65 in a standing cylindrical shape. Further, a pin 66, which is a rod-shaped member penetrating the head guide portion 64 in the horizontal direction, is provided, and both end portions of the pin 66 protrude from the head guide portion 64.
The pin head 71 constituting the tip end portion of the lifter pin 6 includes: a cylindrical portion 72 having a horizontal circular portion on an upper surface; and a cylindrical peripheral wall 73 formed by extending the peripheral edge of the columnar portion 72 vertically downward. That is, the pin head 71 is configured as a covered cylindrical body whose upper side is closed (the cylindrical portion 72 corresponds to a cover). The horizontal circular portion on the upper surface of the columnar portion 72 is formed as a horizontal flat surface 74 facing the substrate G, and contacts the substrate G as described above. The lower portion of the peripheral wall 73 is positioned above the trunk portion 63 so as to surround the upper portion of the head guide portion 64. Therefore, the head guide portion 64 and the spring guide portion 65 described above serve as entry portions located in the peripheral wall 73 as the cylindrical body. The outer peripheral surface of the head guide 64 is formed along the inner peripheral surface of the peripheral wall 73, and functions as a guide when the pin head 71 moves in the vertical direction (i.e., the longitudinal direction of the lift pin 6) as described later. The pin head 71 may be formed by integrally forming the columnar portion 72 and the peripheral wall 73, or the pin head 71 may be formed by joining other members.
Through holes are formed in the lower portions of peripheral walls 73 at positions facing each other. That is, the peripheral wall 73 is provided with 2 through holes, and these through holes are configured as long holes 75 extending in the longitudinal direction. Both ends of the pin 66 enter the elongated holes 75. The pin 66 prevents the pin head 71 from being detached from the pin body 62 due to the elasticity of the spring 61 arranged as described later.
The pin head 71 and the head guide portion 64 surround the upper portion of the elongated hole 75, thereby forming a space 70 defined outside the lifter pin 6, and the spring guide portion 65 is provided in the space 70. The spring 61 is a coil spring, and is wound around the spring guide portion 65, so that the axial center thereof is provided in the space 70 along the vertical direction. The spring 61 is connected to the columnar portion 72 and the head guide portion 64, respectively, and the columnar portion 72 and the head guide portion 64 are biased so as to be separated from each other. When a downward force is relatively applied to the pin head portion 71, the spring 61 contracts, and the pin head portion 71 moves vertically downward, and the pin head portion 71 approaches the body portion 63 of the pin body portion 62. The length of the lift pin 6 is reduced by the movement of the pin head 71.
In order to explain the operation and effect of the mounting table 3 having the lift pins 6, a mounting table 3A of a comparative example in fig. 4 will be explained. The mounting table 3A has the same configuration as the mounting table 3 except that the lift pins 6A are provided instead of the lift pins 6. The lift pin 6A is not provided with the spring 61, and thus the lift pin 6A does not expand or contract. In the stage 3A, the upper ends of the lift pins 6A are separated from the substrate G when the substrate G is processed. In order to prevent the substrate G from floating from the mounting surface 36 when the substrate G is stored in the mounting table 3, the lift pins 6A are arranged in consideration of the operation accuracy of the lift mechanism 5 so that the substrate G is mounted on the mounting surface 36 and temperature adjustment is performed as described below.
The arrows in fig. 4 schematically show heat transfer during processing of the substrate G. During the processing of the substrate, the heat of the plasma is transferred to the substrate G. The hatched arrows indicate the heat transfer from the plasma. On the other hand, as described above, the fluid (refrigerant) whose temperature has been adjusted is supplied to the flow path 44 of the flow path forming portion 33, whereby heat exchange is performed in each part of the mounting table main body 30 including the mounting surface 36. This heat exchange is indicated by black arrows. Heat is transferred between the lift pins 6A and the mounting table body 30, and also between the lift pins 6A and the upper and lower sides thereof. The heat transfer is indicated by open arrows. More specifically, heat is transferred between the upper end portion of the lift pin 6A and the mounting table main body 30 through the O- rings 39 and 41 and the guide member 38, and further heat is transferred to each portion of the lift pin 6A. Thus, the open arrows indicate heat transfer between solids. In this way, heat exchange is also performed between the refrigerant in the flow path 44, which adjusts the temperature of the mounting table body 30 and the elevating pins 6A, and the elevating pins 6A via the mounting table body 30.
In the figure, heat transfer via the heat-conducting gas is indicated by dotted arrows. The dotted arrow shown on the placement surface 36 indicates a portion with a larger heat transfer amount and is thicker. As described above, the mounting surface 36 is temperature-regulated by the refrigerant of the flow path 44. The substrate G contacts the convex portion of the mounting surface 36, and heat exchange is performed between the substrate G and the convex portion. In the substrate G, a portion facing the mounting surface 36 but not in contact therewith (i.e., a portion of the mounting surface 36 facing the recess) also exchanges heat with the mounting surface 36 via the heat conductive gas. Microscopically, although there is a difference in whether or not such a heat conductive gas is inserted, since the mounting surface 36 is formed with relatively dense irregularities, each portion of the substrate G facing the mounting surface 36 is cooled so that the amount of heat transferred to the mounting surface 36 is uniform, and the temperature becomes the same or substantially the same. In addition, the heat conductive gas itself contributes to cooling the substrate G as described above, not only by the function of the mounting surface 36 whose temperature is adjusted by the refrigerant in the flow path 44. The upper end portion of the lift pin 6A in the through hole 37 is brought into a temperature-regulated state by heat transfer with the mounting table main body 30 via the heat transfer gas supplied to the through hole 37 in addition to the above-described heat transfer between solids (heat transfer indicated by the hollow arrow).
However, in the mounting table 3A of this comparative example, the portion of the substrate G facing the through hole 37 is not in contact with the mounting surface 36, unlike the other portions. That is, the portion of the substrate G facing the through hole 37 is not subjected to heat transfer by contact of the temperature-adjusted member, unlike the portion facing the mounting surface 36, and is cooled only by the heat conductive gas. Therefore, a temperature difference occurs between the portion of the substrate G facing the through hole 37 and the portion facing the mounting surface 36. More specifically, the temperature of the portion facing the through hole 37 is higher than the temperature of the portion facing the placement surface 36. Due to such a temperature difference, variation may occur in the in-plane etching process of the substrate G.
In the processing of the substrate G, for example, since the thermal expansion amounts of the lift pins 6A and the lift mechanism 5 are different from the thermal expansion amount of the mounting table main body 30, the positional relationship between the mounting surface 36 and the lift pins 6A may change so as to move to a higher position with respect to the upper ends of the lift pins. In this case, the amount of heat transferred via the heat transfer gas between the portion of the substrate G facing the through-hole 37 and the upper end of the lift pin 6A temperature-adjusted as described above is reduced, and the temperature difference in the surface of the substrate G may be increased.
Referring back to fig. 2, heat transfer in the mounting table 3 will be described. The arrows in fig. 2 represent heat transfer in the same manner as the arrows in fig. 4. In the mounting table 3, as described above, when the substrate G is processed, the flat surface 74 of the upper end of the lift pin 6 comes into contact with the substrate G. As with the lift pin 6A, the upper end of the lift pin 6 is temperature-regulated by the action of the fluid and the heat transfer gas in the flow path 44. Thus, the flat surface 74 is brought into contact with the substrate G at the same or substantially the same temperature as the mounting surface 36, whereby the temperature difference between the portion of the substrate G facing the through hole 37 and the portion facing the mounting surface 36 is eliminated. In the substrate G placed on the placing table 3 in this way, the portion facing the through hole 37 is also contacted with the temperature-adjusted member in addition to the supply of the heat transfer gas, similarly to the portion facing the placing surface 36, and the heat transfer is performed by the contact, so that the uniformity of the in-plane etching process is improved.
As described above, the lift pin 6 is biased by the restoring force of the spring 61. As the processing of the substrate G proceeds, the respective portions of the mounting table body 30 thermally expand, and the height of the mounting surface 36 rises. As a result, the spring 61 expands (deforms), and the distance between the trunk portion 63 and the pin head portion 71 of the pin body portion 62 increases as the distance between the mounting surface 36 and the pin body portion 62 of the lifter pin 6 increases. That is, the height of the flat surface 74 of the lift pin 6 rises to follow the change in the height of the mounting surface 36, and the flat surface 74 is maintained in contact with the substrate G.
The substrate processing apparatus 1 includes a control unit 10 (see fig. 1), and the control unit 10 includes a program, a memory, and a CPU. In the program, a command (step group) is programmed in steps described later by transmitting a control signal to each part of the substrate processing apparatus 1 to execute the processing of the substrate G. Specifically, the control signals are transmitted to control various operations such as turning on and off of the power supplies, supply of the process gas and the heat transfer gas, and lifting of the lift pin 6 by the lift mechanism 5. The program is stored in a storage medium such as an optical disk, a hard disk, or a DVD, and is installed in the control unit 10.
The operation of the substrate processing apparatus 1 will be described in sequence with reference to fig. 5 to 7. In fig. 5 to 7, in order to prevent the drawings from being complicated, some of the components of the substrate processing apparatus 1 are not shown, and only 2 lift pins 6 are shown. First, when the transport mechanism enters the processing chamber 11 from the outside while the temperature-adjusted fluid is flowing through the flow path 44 of the mounting table 3, the lift pins 6 stored in the mounting table 3 are raised by the lift mechanism 5, and the upper ends of the lift pins 6 protrude onto the mounting surface 36. Then, the substrate G is supported on the flat surface 74 of the lift pin 6, the spring 61 contracts by the weight of the substrate G, the pin head 71 descends, and the lift pin 6 becomes short. The transport mechanism retracts to the outside of the processing container 11, and the shutter 12 is closed (fig. 5).
The lift mechanism 5 lowers the lift pins 6, and when the substrate G is placed on the placement surface 36 of the placement table 3, the operation of the lift mechanism 5 is stopped, and the lowering of the lift pins 6 is stopped. The flat surface 74 of the lift pin 6 is in contact with the back surface of the substrate G. The thermally conductive gas is supplied to the gas flow path 40 of the stage body 30, and the process gas is supplied into the process chamber 1 through the shower head 24. On the other hand, the inside of the processing container 11 is evacuated to have a vacuum atmosphere of a desired pressure.
The generation source power supply 22 and the bias power supply 29 are turned on, plasma P is generated from the process gas, and ions constituting the plasma P are drawn to the stage 3. Further, by turning on the dc power supply 49 together with the formation of the plasma P, the substrate G is brought into close contact with the electrostatic chuck 31. In this state, as shown in fig. 2, the lifting/lowering of the lift pins 6 by the lift mechanism 5 is stopped, and the flat surfaces 74 of the lift pins 6 are brought into contact with the back surface of the substrate G to bias the back surface upward. That is, the electrostatic chuck 31 is attracted to the substrate G against the pressing force of the spring 61 of the lift pin 6 (fig. 6).
The surface of the substrate G is etched by the action of the active species in the plasma P and the ions introduced into the mounting table 3. As shown in fig. 2, the flat surface 74 of the lift pin 6 and the mounting surface 36 are adjusted in temperature by the action of the fluid and the heat transfer gas supplied to the flow path 44, and etching is performed in a state where each portion of the surface of the substrate G in contact with these members has a high temperature uniformity. During the etching, for example, the base 32 and the flow path forming portion 33 of the mounting table 3 are relatively largely thermally expanded, so that the height of the mounting surface 36 of the electrostatic chuck 31 in the processing chamber 11 is increased, and the height of the back surface of the substrate G is also increased. As the height of the substrate G rises, the flat surface 74 of the lift pin 6 rises while being in contact with the back surface of the substrate G due to the elasticity of the spring 61 (fig. 7). Therefore, the substrate G continues to be etched in a state where the uniformity of the temperature of each portion in the plane is high, and the etching amount of each portion in the plane is uniform.
When a predetermined time has elapsed from the formation of the plasma P, the generation source power supply 22, the bias power supply 29, and the dc power supply 49 are turned off, and the formation of the plasma P, the introduction of the ions, and the adsorption of the substrate G onto the mounting table 3 are stopped. Further, the supply of the process gas into the process container 11 is stopped. When the upper ends of the lift pins 6 extend above the mounting surface 36 and the substrate G is separated from the mounting surface 36, and the substrate G is delivered by a transport mechanism, not shown, the lift pins 6 descend and return to the state of being stored in the mounting table 3.
According to the substrate processing apparatus 1 having the mounting table 3, the temperature of each portion in the surface of the substrate G sucked by the electrostatic chuck 31 is adjusted to be uniform. As a result, the uniformity of the etching amount can be improved in each portion in the surface of the substrate G. Further, since the upper end surfaces of the lift pins 6 which contact the substrate G are formed as the flat surfaces 74, the contact area between the substrate G and the lift pins 6 is relatively large. This can more reliably improve the temperature uniformity of each portion in the surface of the substrate G.
In the mounting table 3A of the comparative example shown in fig. 4, as described above, when the upper ends of the lift pins 6A are housed in the mounting table 3A, the upper ends of the lift pins 6A need to be at a height that does not push up the substrate G from the mounting surface 36. Further, as described above, the distance between the upper end of the lift pin 6A and the substrate G is increased by the amount of thermal expansion of each part, but if the distance is too large, the heat transfer between the lift pin 6A and the substrate G is affected. In this case, the allowable range of the height of the lift pins 6A is small, and it is necessary to adjust the height of the upper ends of the lift pins 6A with high accuracy in accordance with the processing temperature of the substrate G. That is, the amount of work required for adjustment is large. However, the lift pins 6 of the mounting table 3 are configured to be extended and contracted by the elasticity of the springs 61, and it is only necessary to ensure a state of contact with the substrate G mounted on the mounting surface 36, and therefore, there are advantages that the allowable range of height is large and the amount of work required for height adjustment is small compared to the lift pins 6A.
In the stage 3, a mounting surface of the substrate G is formed by a member other than the electrostatic chuck 31, and the mounting surface is temperature-adjusted in the same manner as the mounting surface 36 of the electrostatic chuck 31. In this case, when the substrate G is biased upward by the lift pins 6, the substrate G may be brought into close contact with the mounting surface by its own weight to adjust the temperature. Therefore, the stage according to the present technology is not limited to the electrostatic chuck 31. However, in order to adjust the temperature by bringing the substrate G into close contact with the mounting surface more reliably, it is preferable to provide the electrostatic chuck 31 as described above and form the mounting surface 36 by the electrostatic chuck 31.
Although the mounting table 3 is applied to the substrate processing apparatus 1 as an etching apparatus, it may be applied to an apparatus that performs other processes such as a film forming process, and the uniformity of the temperature in the surface of the substrate G and the process can be improved. The mounting table 3 is not limited to an apparatus for performing plasma processing. The present invention is not limited to the processing of the substrate G for FPD production, and can be applied to the processing of other types of substrates such as semiconductor wafers.
However, although the fluid supplied to the flow path 44 is a refrigerant for cooling the substrate G in the above-described example, the fluid may also function as a heat medium for heating the substrate G when the processing temperature of the substrate G needs to be maintained high and the processing environment is likely to be relatively low. The heat conductive gas may be supplied to the mounting table 3 while being temperature-adjusted to have a function of heating the substrate G and higher than the processing environment of the substrate G. Further, instead of the flow path 44, the mounting table 3 may be provided with, for example, a heater, heat of which is transferred to the mounting table main body 30 and the lift pins 6, and the mounting surface 36 and the flat surfaces 74 of the lift pins 6 may be temperature-adjusted. That is, the temperature adjusting mechanism provided in the mounting table 3 is not limited to the cooling unit 45 and the flow path 44 as long as it can adjust the temperature of the lift pins 6 and the mounting table body 30.
The structure of the lift pin is not limited to the structure of the lift pin 6 described above. For example, a resin molded body as an elastic member may be provided at the upper end of the pin main body portion 62, and the resin molded body may be in contact with the back surface of the base sheet G and biased upward by elasticity due to deformation thereof. However, in the lifter pin 6, as described above, the pin body 62 is configured to enter the pin head 71 so as to serve as a guide when the pin head 71 moves, and the spring 61 is provided in the space 70 surrounded by the pin body 62 and the pin head 71. That is, the lift pin 6 is configured to have the spring 61 provided in a space defined from the outside. Therefore, the processing gas or the product generated during the processing is less likely to contact the spring 61, and therefore, there is an advantage of suppressing the decrease in the elasticity of the spring 61 due to the deterioration of the spring 61 or the adhesion of foreign matter. In addition, the lift pin 6 may be configured such that resin is provided as an elastic member in the space 70 instead of the spring 61. As described above, the elastic member is not limited to a spring. When a spring is used as the elastic member, a disc spring or the like can be used in addition to the coil spring.
Furthermore, the present embodiments are to be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the gist thereof.
[ evaluation test ]
Next, an evaluation test performed in association with the present technology will be described. In this evaluation test, a substrate G having a thermal label (registered trademark) attached to its upper surface is placed on the mounting table 3 of the substrate processing apparatus 1, and plasma is formed as described above. Then, the temperature of the substrate G at the position where the thermal label is attached when the plasma is formed is measured. The position where the thermal label is attached is described in detail below, i.e., a position directly above the through hole 37, and a position where the substrate G is held flat without overlapping the opening through which the heat-conductive gas is discharged. That is, the position held flat is a position where the opening in the mounting surface 36 of the gas flow path 40 and the through hole 37 do not overlap with each other, and is thereafter a flat surface portion.
In addition, the same test was performed for the substrate processing apparatus 1 having the mounting table 3A of the comparative example, and the temperature of the substrate G directly above the planar portion and the through hole 37 at the time of plasma formation was measured. In addition, at the time of plasma formation, supply of the heat conductive gas, supply of power from the bias power supply 29, and flow of the fluid in the flow path 44 are performed in the same manner as in the above-described embodiment. The conditions in this evaluation test are shown below, in which the power supplied from the generation source power supply 22 was 9000W, the power supplied from the bias power supply 29 was 6000W, the plasma formation time was 60 seconds, the pressure in the processing chamber 11 was 10mTorr (1.33Pa), the pressure of the supplied heat transfer gas was 3Torr (400Pa), and the temperature of the fluid supplied to the flow path 44 was 100 ℃.
Fig. 8 shows a graph representing the results of the evaluation test. The temperature of the placing tables 3 and 3A, which are flat surface portions of the substrate G, was 130 ℃. The temperature of the substrate G immediately above the through hole 37 of the mounting table 3A was 140 ℃. In contrast, the temperature of the substrate G immediately above the through hole 37 with respect to the mounting table 3 was 130 ℃. In this way, it is confirmed that the temperatures of the flat surface portion and the through hole 37 are the same for the substrate G of the mounting table 3, and the effects described in the embodiment can be obtained.
Claims (9)
1. A substrate stage, comprising:
a mounting table main body having a mounting surface on which a substrate is mounted;
a plurality of holes formed in the table main body in a vertical direction, the plurality of holes being open in the mounting surface;
a plurality of support bodies, each of which is provided in each of the plurality of holes, for supporting the substrate to move the substrate between the mounting surface and a position above the mounting surface;
a temperature adjusting unit for adjusting the temperature of the mounting table body and the support body;
a lifting mechanism for lifting each support body; and
and an elastic member provided to each of the support bodies so that a longitudinal length of each of the support bodies can be changed by deformation, and configured to be capable of placing the substrate on the placing surface by each of the support bodies after the lifting and lowering of the lifting and lowering mechanism are stopped and to be in a state in which the substrate is biased upward.
2. The substrate stage according to claim 1, wherein:
the support body is a pin extending in the longitudinal direction, and has a tip portion contacting the substrate and a main body portion provided below the tip portion,
the elastic member is located between the front end portion and the main body portion.
3. The substrate stage of claim 2, wherein:
the front end part is a cylinder with the upper side closed by a cover,
an inlet portion positioned in the cylinder is provided on an upper end side of the main body portion,
the inlet portion has an outer circumferential surface formed along an inner circumferential surface of the cylinder,
the elastic member is provided between the cover constituting the tip end portion and the entry portion.
4. The substrate stage according to claim 2 or 3, wherein:
the front end portion has a flat surface in opposed contact with the substrate.
5. The substrate stage according to any one of claims 1 to 4, wherein:
the mounting table main body includes an electrostatic chuck, and the mounting surface includes the electrostatic chuck.
6. The substrate stage according to any one of claims 1 to 5, wherein:
the carrying surface is formed with a concave-convex,
the temperature adjusting section includes a gas supply section for supplying a gas to a gap formed between the mounting surface and the substrate and a gap formed between the hole and the support body.
7. A substrate processing method for processing a substrate by placing the substrate on a placing table main body having a placing surface, the substrate processing method comprising:
a step of supporting the substrate at a position above the mounting surface by extending support bodies provided in a plurality of holes formed in the mounting table main body in a vertical direction and opened in the mounting surface, respectively, out of the mounting surface;
lowering the plurality of support bodies by a lifting mechanism;
a step of placing the substrate on the placement surface by an elastic member provided to each support body so that the longitudinal length of each support body can be changed by deformation, and allowing the substrate to be biased upward by each support body after the lifting and lowering of the lifting and lowering mechanism is stopped; and
and a processing step of adjusting the temperature of the mounting table main body and the support body by a temperature adjusting section to process the substrate mounted on the mounting surface.
8. The substrate processing method according to claim 7, wherein:
the carrying surface is formed with a concave-convex,
the processing step supplies a gas to a gap formed between the mounting surface and the substrate and a gap formed between the through hole and the support body in order to adjust the in-plane temperature of the substrate.
9. The substrate processing method according to claim 7 or 8, characterized in that:
the support body is a pin extending in the longitudinal direction, and has a tip portion contacting the substrate and a main body portion provided below the tip portion, the elastic member is located between the tip portion and the main body portion,
the substrate processing method includes: and changing the distance between the mounting surface and the main body portion by deformation of the elastic member when the mounting portion main body and the support body thermally expand and the distance between the main body portion and the distal end portion changes in accordance with the change in the distance.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-009775 | 2021-01-25 | ||
| JP2021009775A JP2022113491A (en) | 2021-01-25 | 2021-01-25 | Substrate mounting table and substrate processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114792615A true CN114792615A (en) | 2022-07-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210046574.7A Pending CN114792615A (en) | 2021-01-25 | 2022-01-14 | Substrate mounting table and substrate processing method |
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| Country | Link |
|---|---|
| JP (1) | JP2022113491A (en) |
| KR (1) | KR20220107941A (en) |
| CN (1) | CN114792615A (en) |
| TW (1) | TW202236492A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4597894B2 (en) | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
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2021
- 2021-01-25 JP JP2021009775A patent/JP2022113491A/en active Pending
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2022
- 2022-01-12 KR KR1020220004609A patent/KR20220107941A/en not_active Application Discontinuation
- 2022-01-14 TW TW111101621A patent/TW202236492A/en unknown
- 2022-01-14 CN CN202210046574.7A patent/CN114792615A/en active Pending
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| Publication number | Publication date |
|---|---|
| JP2022113491A (en) | 2022-08-04 |
| KR20220107941A (en) | 2022-08-02 |
| TW202236492A (en) | 2022-09-16 |
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