CN114783887A - Preparation method of semiconductor power device and packaging module prepared by same - Google Patents

Preparation method of semiconductor power device and packaging module prepared by same Download PDF

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Publication number
CN114783887A
CN114783887A CN202210355566.0A CN202210355566A CN114783887A CN 114783887 A CN114783887 A CN 114783887A CN 202210355566 A CN202210355566 A CN 202210355566A CN 114783887 A CN114783887 A CN 114783887A
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China
Prior art keywords
aluminum
clad plate
based copper
dispensing
binding
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CN202210355566.0A
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Chinese (zh)
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冯宇翔
张土明
华庆
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Guangdong Huixin Semiconductor Co Ltd
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Guangdong Huixin Semiconductor Co Ltd
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Priority to CN202210355566.0A priority Critical patent/CN114783887A/en
Publication of CN114783887A publication Critical patent/CN114783887A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H01L2224/85815—Reflow soldering

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

The invention discloses a preparation method of a semiconductor power device and a prepared packaging module thereof, which comprises the following steps: preparing an aluminum-based copper-clad plate: selecting an aluminum-based copper-clad plate with a proper size; and (3) solder paste printing: printing solder paste at a preset position of the aluminum-based copper-clad plate; element pasting: mounting the element at the position of the printing solder paste of the aluminum-based copper-clad plate; reflow soldering and fixing: carrying out reflow soldering on the aluminum-based copper-clad plate, and fixing the element; welding the binding line: welding the binding line; dispensing protection: forming a protection ring by dispensing glue on the binding line and the periphery of the element through glue dispensing equipment, wherein the protection ring is used for preventing injection molding materials from impacting the binding line during injection molding; drying and curing; performing injection molding and packaging; the application aims at providing a preparation method of a semiconductor power device and a prepared packaging module thereof, and by arranging the protection ring, the impact force of injection molding materials on the binding line during injection molding is reduced, the line punching problem is reduced to the minimum, the product reject ratio is reduced, and the product reliability is improved.

Description

Preparation method of semiconductor power device and packaging module prepared by same
Technical Field
The invention relates to the field of semiconductor power devices, in particular to a preparation method of a semiconductor power device and a prepared packaging module thereof.
Background
The intelligent power module is a power driving product combining power electronics and integrated circuit technology, and has the advantages of high current, low saturation voltage, high voltage resistance and the like of a high-power transistor, and the advantages of high input impedance, high switching frequency and low driving power of a field effect transistor. Logic, control, detection and protection circuits are integrated in the intelligent power module, so that the intelligent power module is convenient to use, the size of the system is reduced, the development time is shortened, the reliability of the system is enhanced, and the intelligent power module is suitable for the technical field of electronic devices and is more and more widely applied in various fields.
The intelligent power module is a power device formed by combining and packaging materials such as a substrate, a chip, a resistance-capacitance circuit and a binding circuit, the chip or other elements need to be connected and bound through the binding circuit in the production and manufacturing process, the type selection scheme of the binding circuit is particularly important, and the reliability of products is directly influenced, such as the problems of poor welding points, wire collapse, wire punching, line body pulling damage, bonded chip damage and the like.
In the existing semiconductor production, the binding line generally adopts the line diameter of about 1.5mil, about 38um, and the line diameter of binding line is very thin, causes phenomena such as line punching, wire collapse easily when the encapsulation of moulding plastics, and there is the hidden danger of quality in the product of manufacturing, influences the reliability of product, reduces life. On one hand, under the same voltage specification, manufacturers make the overall design size of the driving HVIC chip smaller to control cost, and on the other hand, because the driving HVIC chip is a control center, required binding wires are also the most devices of the whole module, metal wires are more and dense, and the distance between the wires is small, thereby greatly increasing the technical difficulty of the product in packaging. Therefore, in order to avoid the binding wire from being seriously impacted during packaging, the application provides a technical scheme for protecting the binding wire during packaging injection molding.
Disclosure of Invention
The invention aims to provide a preparation method of a semiconductor power device and a prepared packaging module thereof, which reduce the impact force of injection molding materials on binding lines during injection molding by arranging a protection ring, minimize the line punching problem, reduce the product reject ratio and improve the product reliability.
In order to achieve the purpose, the invention adopts the following technical scheme: a preparation method of a semiconductor power device comprises the following steps:
preparing an aluminum-based copper-clad plate: selecting an aluminum-based copper-clad plate with a proper size, and cleaning the aluminum-based copper-clad plate;
and (3) solder paste printing: printing solder paste on a preset position of the aluminum-based copper-clad plate;
element pasting: mounting the element at the position of the printing solder paste of the aluminum-based copper-clad plate;
reflow soldering and fixing: reflow soldering is carried out on the aluminum-based copper-clad plate after the mounting, and elements mounted on the aluminum-based copper-clad plate are fixed;
welding the binding line: welding a binding line, and realizing the electrical connection between elements or between the elements and the aluminum-based copper-clad plate through two ends of the binding line;
dispensing protection: forming a protection ring by dispensing glue on the binding line and the periphery of the element through glue dispensing equipment, wherein the protection ring is used for preventing injection molding materials from impacting the binding line during injection molding;
drying and curing: baking the aluminum-based copper-clad plate subjected to glue dispensing to solidify the protection ring;
and (3) injection molding and packaging: performing injection molding and packaging on the cured aluminum-based copper-clad plate;
product detection: and carrying out electrical parameter test on the packaged product.
Preferably, the step of dispensing protection specifically includes the following steps:
fixing a product: fixing the aluminum-based copper-clad plate welded with the binding line on a conveying line;
moving to a station: the aluminum-based copper-clad plate is moved to a working area through a conveying line;
identifying and determining the position: collecting the surface of the aluminum-based copper-clad plate through automatic optical detection equipment, determining the periphery of the element and a glue dispensing area of the binding line, and preparing to perform glue dispensing action;
moving and dispensing: the glue dispensing equipment moves to the upper part of the glue dispensing area, and glue dispensing is carried out on the periphery of the glue dispensing area to form a protection ring;
high-temperature curing: the aluminium-based copper-clad plate that the point was glued and is accomplished removes to toasting the district through the transfer chain and dries, makes the protection ring solidification.
Preferably, the step of identifying and determining the position includes the steps of:
and (3) identifying the position: the method comprises the following steps that automatic optical detection equipment collects the surface of an aluminum-based copper-clad plate as an identified image, and identifies the welding point positions of a plurality of binding lines and the positions of elements which are connected with the binding lines in a centralized manner;
establishing a coordinate system: establishing a coordinate system by taking the lower left corner of the collected image as a coordinate origin, the width direction of the collected image as an x axis and the height direction of the collected image as a y axis;
determining a dispensing area: selecting the distance between two welding points with the largest span along the x-axis direction as the width d, selecting the distance between two welding points with the largest span along the y-axis direction as the height h, wherein the width a and the height b of the elements which are connected in a line set are defined as the binding lines, and the size c of the welding points is defined as the binding lines;
and when a is smaller than D and b is smaller than H, taking D + n × c, n ═ 1, 2, 3 as the width D of the dispensing region, taking H + n × c, n ═ 1, 2, 3 as the height H of the dispensing region, determining that the range of D × H is taken as the dispensing region, and dispensing along the perimeter of the dispensing region.
Preferably, in the step of moving the dispensing, the dispensing method specifically includes:
selecting a reference point: in the dispensing area, one of the points is selected as a reference point;
basic dispensing: taking the reference point as a starting point, and carrying out interval type glue dispensing along the perimeter direction of a glue dispensing area at a distance z1 to form a first circle of glue dispensing points;
and (3) multiple dispensing: carrying out interval type dispensing along the perimeter direction of the dispensing area at a distance z2 to form a second circle of dispensing points, wherein the distance z2 is smaller than the distance z 1;
closing to form a ring: and repeating the glue dispensing steps for multiple times, and continuously reducing the glue dispensing distance until all glue dispensing points are connected to form a protection ring.
Preferably, in the step of moving the dispensing, the method further includes determining a height D and a thickness E of the protection ring according to a size of the product, setting a distance between two adjacent welding points as C, a distance between an inner wall of the protection ring and the adjacent welding point as a, a distance between an outer wall of the protection ring and the adjacent welding point as B, and a height of the binding line as F, and then: the distance C between two adjacent welding points is more than or equal to 3.5 mm; the height D of the protection ring belongs to [ F/3, F/2 ], and F is more than 0; the thickness E, A, B of the protection ring is more than or equal to 1 mm.
Preferably, in the step of preparing the aluminum-based copper-clad plate, the method specifically comprises the following steps: and (3) putting the aluminum-based copper-clad plate into a warehouse, performing quality control inspection on the aluminum-based copper-clad plate, and cleaning the qualified aluminum-based copper-clad plate by adopting a multistage ultrasonic cleaning mode.
Preferably, between the reflow soldering fixing step and the binding line soldering step, a cleaning and drying step is further included: and cleaning the aluminum-based copper-clad plate subjected to reflow soldering by using a cleaning agent, and placing the cleaned aluminum-based copper-clad plate into a constant-temperature box body for pre-baking.
Preferably, after the binding line and the binding line are welded, the automatic optical inspection step is further included, the aluminum-based copper-clad plate welded with the binding line is subjected to automatic optical inspection, welding points between the binding line and the aluminum-based copper-clad plate and welding points between the binding line and the aluminum-based copper-clad plate are inspected, and unqualified products of the welding points are screened out by comparing the welding points with database parameters of the automatic optical inspection.
A packaging module prepared by the preparation method of the semiconductor power device comprises an aluminum-based copper-clad plate, a driving HVIC chip, a triode chip, a binding wire, a protection ring and pins; the driving HVIC chip, the triode chip and the pins are fixed on the aluminum-based copper-clad plate in a soldering mode; the binding line is used for connecting the driving HVIC chip and the aluminum-based copper-clad plate; the guard ring is arranged on the periphery of the binding line and the area where the driving HVIC chip is arranged.
Preferably, the height of the guard ring is greater than the height 1/3 of the driving HVIC chip and less than the height 1/2 of the driving HVIC chip; the width of the protection ring is larger than 1 mm; the distance between the protection ring and the welding point of the adjacent binding line is larger than 1 mm.
The technical scheme of the invention has the beneficial effects that: at the periphery of the element and the connected binding line, a layer of high-temperature glue is pasted around the drive IC and the binding line thereof in an industrial glue dispensing mode to form a circle of protruding protection ring, so that the impact force of injection molding materials on the binding line during injection molding can be reduced, the line punching problem is reduced to the minimum, the reject ratio of products is reduced, and the reliability of the products is improved.
Drawings
FIG. 1 is a schematic block diagram of one embodiment of the present invention;
FIG. 2 is a schematic view of the injection molding configuration of one embodiment of the present invention;
FIG. 3 is a schematic diagram of a manufacturing process for one embodiment of the manufacturing method of the present invention;
fig. 4 is an electrical topology of one embodiment of the present invention.
Wherein: the copper-clad plate comprises an aluminum-based copper-clad plate 1, a driving HVIC chip 2, a triode chip 3, a binding wire 4, a protection ring 5 and a pin 6.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
Referring to fig. 1 to 4, a method for manufacturing a semiconductor power device includes the following steps:
preparing an aluminum-based copper-clad plate: selecting an aluminum-based copper-clad plate with a proper size, and cleaning the aluminum-based copper-clad plate;
and (3) solder paste printing: printing solder paste at a preset position of the aluminum-based copper-clad plate;
element pasting: mounting the element at the position of the printing solder paste of the aluminum-based copper-clad plate;
reflow soldering and fixing: reflow soldering is carried out on the aluminum-based copper-clad plate after the mounting, and elements mounted on the aluminum-based copper-clad plate are fixed;
welding the binding line: welding a binding line, and realizing the electrical connection between elements or between the elements and the aluminum-based copper-clad plate through two ends of the binding line;
dispensing protection: forming a protection ring by dispensing glue on the binding line and the periphery of the element through glue dispensing equipment, wherein the protection ring is used for preventing injection molding materials from impacting the binding line during injection molding;
drying and curing: baking the aluminum-based copper-clad plate subjected to glue dispensing to solidify the protection ring;
and (3) injection molding and packaging: performing injection molding and packaging on the cured aluminum-based copper-clad plate;
product detection: and carrying out electrical parameter test on the packaged product.
Under the mainstream background of miniaturization of product application and high integration of semiconductors, the design and manufacture of semiconductors are faced with significant challenges, and the bonding process of driving HVIC chips in semiconductor power devices in the current semiconductor manufacturing technology adopts bonding metal wires with the same specification. However, the binding metal wires of the same specification are adopted, and due to the limitation of the material of the binding metal wires, the metal wires which are in a non-parallel state with the feeding direction of the injection molding material are easily impacted by the injection molding material during injection molding and packaging, and especially the binding metal wires in the direction perpendicular to the injection molding direction are most impacted. The metal wire subjected to impact is easy to have the conditions of wire collapse or wire punching, and after the wire collapse or wire punching, the product is easy to have faults under the high-temperature and high-humidity environment.
Based on the problems, the method for reducing the flow impact of the plastic package material during injection molding is provided, a layer of high-temperature glue is adhered and coated around the drive IC and the bonding line thereof in an industrial glue dispensing mode at the periphery of the element and the bonding line connected with the element to form a circle of protruding protection ring, the impact force of the injection molding material on the bonding line during injection molding can be reduced, the line punching problem is reduced to the minimum, the product reject ratio is reduced, and the product reliability is improved.
The glue in this application adopts the high temperature glue, is a sealed glue that has high temperature resistant effect, is the paste or has the high temperature semi-solid glue of certain mobility, has more superior high low temperature resistance, uses continuously and resists high temperature and reaches 330 ℃, resists low temperature and reaches-60 ℃, has good insulating nature and high peel strength, curing time advantage such as short.
Preferably, the step of dispensing protection specifically includes the following steps:
fixing a product: fixing the aluminum-based copper-clad plate welded with the binding line on a conveying line;
moving to a station: the aluminum-based copper-clad plate is moved to a working area through a conveying line;
identifying and determining the position: collecting the surface of the aluminum-based copper-clad plate through automatic optical detection equipment, determining the periphery of the element and a glue dispensing area of the binding line, and preparing to perform glue dispensing action;
moving and dispensing: the glue dispensing equipment moves to the upper part of the glue dispensing area, and glue dispensing is carried out on the periphery of the glue dispensing area to form a protection ring;
high-temperature curing: the aluminium-based copper-clad plate that the point was glued and is accomplished removes to toasting the district through the transfer chain and dries, makes the protection ring solidification.
When a product is fixed, the semi-finished aluminum-based copper-clad plate enters a working area of the dispensing equipment through the conveying line, and the bottom of the aluminum-based copper-clad plate is sucked through the air pressure device at the bottom of the conveying line, so that the aluminum-based copper-clad plate is firm and does not shake.
When the surface of the aluminum-based copper-clad plate is collected through automatic optical detection equipment, the automatic optical detection equipment can automatically scan the surface of the aluminum-based copper-clad plate through a camera and collect images, analyze the elements which are densely connected with the binding line, the welding point of the aluminum-based copper-clad plate and the binding line in the images, divide an area needing glue dispensing according to the distribution positions of the binding line and the elements in the images, form a protection ring in the glue dispensing area through moving glue dispensing, protect the binding line and the elements in the glue dispensing area through the protection ring, prevent injection molding materials from impacting the binding line during injection molding, and prevent the binding line from falling off or collapsing. The binding lines connecting densely elements are generally referred to as driving chips.
And injecting high-temperature glue of a required type into the glue dispensing area, wherein the high-temperature glue is in a semi-solid state, does not freely flow, but can be extruded to change the shape. And moving a dispensing nozzle of the dispensing equipment to the upper part of the dispensing area through a program to prepare for dispensing in the dispensing area. The thickness and the height of the high-temperature glue can be controlled through the specification of the glue dispensing nozzle, and different glue dispensing nozzles are selected according to different product structural designs.
Meanwhile, in the step of identifying and determining the position, the following steps are included:
and (3) identifying the position: the method comprises the following steps that automatic optical detection equipment collects the surface of an aluminum-based copper-clad plate as an identified image, and identifies the welding point positions of a plurality of binding lines and the positions of elements which are connected with the binding lines in a centralized manner;
establishing a coordinate system: establishing a coordinate system by taking the lower left corner of the acquired image as a coordinate origin, the width direction of the acquired image as an x axis and the height direction of the acquired image as a y axis;
determining a dispensing area: selecting the distance between two welding points with the largest span along the x-axis direction as the width d, selecting the distance between two welding points with the largest span along the y-axis direction as the height h, wherein the width a and the height b of the elements which are connected in a line set are defined as the binding lines, and the size c of the welding points is defined as the binding lines;
and when a is smaller than D and b is smaller than H, taking D + n × c, n ═ 1, 2, 3 as the width D of the dispensing region, taking H + n × c, n ═ 1, 2, 3 as the height H of the dispensing region, determining that the range of D × H is taken as the dispensing region, and dispensing along the perimeter of the dispensing region.
In the collected image, the welding point position of the binding line and the position of the element intensively connected with the binding line are identified by establishing a coordinate system, the width D and the height H of the dispensing area are determined by the width D of the welding point in the x-axis direction and the height H of the welding point in the y-axis direction, and finally the position of the dispensing area in the image is determined.
Generally, the elements connected in a concentrated manner by the binding lines are driving HVIC chips, the driving HVIC chips are chip packaging structures, the rest circuit elements are distributed on the periphery of the driving HVIC chips, and the connection points of the binding lines and the rest elements are generally electrically connected with the welding points of the aluminum-based copper-clad plate through the binding lines, so that the area surrounded by the maximum width d and the maximum height h of the binding lines can be used as a dispensing area.
Specifically, in the step of moving the dispensing, the method specifically includes:
selecting a reference point: in the dispensing area, one of the points is selected as a reference point;
basic dispensing: taking the reference point as a starting point, and carrying out interval type dispensing along the perimeter direction of the dispensing area at a distance z1 to form a first circle of dispensing points;
and (3) multiple dispensing: carrying out interval type dispensing along the perimeter direction of the dispensing area at a distance z2 to form a second circle of dispensing points, wherein the distance z2 is smaller than the distance z 1;
closing to form a ring: and repeating the glue dispensing steps for multiple times, and continuously reducing the glue dispensing distance until all glue dispensing points are connected to form a protection ring.
During dispensing, a dispensing nozzle of dispensing equipment is used for dispensing according to a preset program, after a first selected reference point is reached, a dispensing valve is opened, dispensing is carried out by the dispensing nozzle of the dispensing equipment along the perimeter direction of a dispensing area, dispensing is carried out around the periphery of a binding line from a set direction according to the program of the equipment, a small number of dispensing circles are firstly used as bottoming in a step-by-step dispensing mode, then the dispensing times are increased on the basis, and therefore a circle of dispensing circles are connected into a ring.
Preferably, in the step of moving the dispensing, the method further includes determining a height D and a thickness E of the protection ring according to a size of the product, setting a distance between two adjacent welding points as C, a distance between an inner wall of the protection ring and the adjacent welding point as a, a distance between an outer wall of the protection ring and the adjacent welding point as B, and a height of the binding line as F, and then: the distance C between two adjacent welding points is more than or equal to 3.5 mm; the height D of the protection ring belongs to [ F/3, F/2 ], and F is more than 0; the thickness E, A, B of the protection ring is more than or equal to 1 mm.
And coating a circle of high-temperature glue on the periphery surrounding the driving HVIC chip and the binding line thereof to form a closed-loop protection ring, wherein each water caltrop of the protection ring is of a circular cutting structure, so that the chamfer is smooth, and the plastic packaging material on the periphery of the protection ring can flow easily during injection molding. The protection ring protrudes upwards relative to the surface of the aluminum-based copper-clad plate, the driving HVIC chip and the binding line thereof are surrounded, the impact force of injection molding materials on the binding line can be reduced during packaging, certain parameter requirements are met on the width and the height of the protruding protection ring, the protection ring is not suitable for being too high or too low relative to the driving HVIC chip, the mold flow speed during injection molding is influenced when the height of the protection ring exceeds the height of the binding line, meanwhile, the fall between the protection ring and the surface of the aluminum-based copper-clad plate is large, the flow speed is increased, and large impact on the binding line is easily caused. When the height of protection ring is far below the height of binding line, can't play the choked flow effect to the injection molding material, can't reduce the impact of injection molding material. The height and thickness of the guard ring should be set to avoid affecting the operation of the post-process.
In the step of preparing the aluminum-based copper-clad plate, the method specifically comprises the following steps: and (3) warehousing the aluminum-based copper-clad plate, performing quality control inspection on the aluminum-based copper-clad plate, and cleaning the qualified aluminum-based copper-clad plate in a multi-stage ultrasonic cleaning mode.
By adopting a multi-stage ultrasonic cleaning mode, in the actual production process, the rosin cleaning or Plasma cleaning can be effectively carried out by different levels of ultrasonic cleaning with different cleaning capabilities. The ultrasonic cleaning of different levels can produce different cleaning effects by adjusting the generation frequency of the ultrasonic equipment, and the technical means is the prior art and is not described herein.
Specifically, between the reflow soldering fixing step and the binding line soldering step, the method further comprises the following steps of: and cleaning the aluminum-based copper-clad plate subjected to reflow soldering by using a cleaning agent, placing the cleaned aluminum-based copper-clad plate into a constant-temperature box, and pre-baking.
After the reflow soldering step is completed, cleaning is carried out on equipment through a rosin cleaning agent, a pre-baking step is carried out before binding, the cleaned aluminum-based copper-clad plate is placed in a constant temperature box body to be pre-baked, water and gas are cleaned, and the next procedure is carried out after the reflow soldering step is completed.
Preferably, after the binding line and the binding line are welded, the automatic optical inspection step is further included, the aluminum-based copper-clad plate welded with the binding line is subjected to automatic optical inspection, welding points between the binding line and the aluminum-based copper-clad plate and welding points between the binding line and the aluminum-based copper-clad plate are inspected, and unqualified products of the welding points are screened out by comparing the welding points with database parameters of the automatic optical inspection.
When the automatic optical inspection is carried out, the machine automatically scans the surface of the aluminum-based copper-clad plate through a camera, acquires an image, tests welding points of a copper wire or a gold wire and the aluminum-based copper-clad plate, compares parameters of the welding points with qualified parameters in a database, if the comparison result is not met, the welding points have defects, and the welding points are displayed through a display or an automatic mark, so that maintenance personnel can conveniently carry out trimming; if the comparison result is in line, the product is a qualified product.
A packaging module prepared by the preparation method of the semiconductor power device comprises an aluminum-based copper-clad plate 1, a driving HVIC chip 2, a triode chip 3, a binding wire 4, a protection ring 5 and a pin 6; the driving HVIC chip 2, the triode chip 3 and the pin 6 are fixed on the aluminum-based copper-clad plate 1 in a soldering mode; the binding line 4 is used for connecting the driving HVIC chip 2 and the aluminum-based copper-clad plate 1; the guard ring 5 is provided on the periphery of the binding line 4 and the region where the driving HVIC chip 2 is located.
Preferably, the height of the guard ring 5 is greater than the height 1/3 of the driving HVIC chip 2 and less than the height 1/2 of the driving HVIC chip 2; the width of the protection ring 5 is more than 1 mm; the distance between the protection ring 5 and the welding point of the adjacent binding line 4 is more than 1 mm.
Fig. 4 shows an electrical topology diagram of an intelligent power module 01 of the present application, which includes a control chip 02, 3 inverter units, each inverter unit includes 3 sets of inverter modules, each set of inverter modules includes two three-pole transistors, wherein a three-pole transistor 03 and a three-pole transistor 06 are in a set, a three-pole transistor 04 and a three-pole transistor 07 are in a set, a three-pole transistor 05 and a three-pole transistor 08 are in a set, each set of two three-pole transistors is divided into an upper bridge arm and a lower bridge arm, wherein a three-pole transistor 03 is an upper bridge arm, a three-pole transistor 07 is a lower bridge arm, a three-pole transistor 04 is an upper bridge arm, a three-pole transistor 07 is a lower bridge arm, a three-pole transistor 05 is an upper bridge arm, a three-pole transistor 08 is a lower bridge arm, a drain D of the three-pole transistor 03 of the upper bridge arm is connected to a high voltage input terminal P of the module, a source of the three-pole transistor 03 of the upper bridge arm is connected to a drain of the three-pole transistor 06 of the lower bridge arm, the source electrode of a triode transistor 06 of a lower bridge arm is connected with an UN end of an external pin of a module, the grid electrodes G of the two triode transistors are connected with a control chip 02, the source electrode S of a triode transistor 04 of an upper bridge arm is connected with a drain electrode D of a triode transistor 07 of the lower bridge arm, the source electrode of the triode transistor 07 of the lower bridge arm is connected with a VN end of the external pin of the module, the grid electrodes of the two triode transistors are connected with the control chip 02, the source electrode of a triode transistor 05 of the upper bridge arm is connected with a drain electrode of a triode transistor 08 of the lower bridge arm, the source electrode of the triode transistor 08 of the lower bridge arm is connected with a WN end of the external pin of the module, the grid electrodes of the two triode transistors are connected with the control chip 02, 09 is a high-frequency filter capacitor of the control chip, is connected with VCC and COM and is as close to the output end of the control chip as possible, the high-frequency filter is used for filtering high-frequency signals, the VCC power supply is +15V, and a capacitor of 10-47uf is added for post-stage filtering processing, the circuit is characterized in that false triggering caused by interference of a high-voltage signal on a power supply is prevented, 10 is a filter capacitor of an ITRIP (integrated circuit trip), is connected with the ITRIP and COM and is used for filtering out high-frequency signals, the ITRIP is a voltage type overcurrent protection terminal, the threshold voltage is generally 0.45-0.55V and is also a terminal which is easy to receive interference, and a capacitor of 1nf is added for carrying out post-stage filtering processing in order to prevent false triggering caused by interference of the high-voltage signal on the ITRIP.
In the description herein, references to the description of "an embodiment," "an example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be taken in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without inventive effort, which would fall within the scope of the present invention.

Claims (10)

1. A preparation method of a semiconductor power device is characterized by comprising the following steps:
preparing an aluminum-based copper-clad plate: selecting an aluminum-based copper-clad plate with a proper size, and cleaning the aluminum-based copper-clad plate;
and (3) solder paste printing: printing solder paste at a preset position of the aluminum-based copper-clad plate;
element pasting: mounting the element at the position of the printing solder paste of the aluminum-based copper-clad plate;
reflow soldering and fixing: reflow soldering is carried out on the aluminum-based copper-clad plate after the mounting, and elements mounted on the aluminum-based copper-clad plate are fixed;
welding the binding line: welding the binding lines, and realizing the electrical connection between elements or between the elements and the aluminum-based copper-clad plate through two ends of the binding lines;
dispensing protection: forming a protection ring by dispensing glue on the binding line and the periphery of the element through glue dispensing equipment, wherein the protection ring is used for preventing injection molding materials from impacting the binding line during injection molding;
drying and curing: baking the aluminum-based copper-clad plate subjected to glue dispensing to solidify the protection ring;
and (3) injection molding and packaging: performing injection molding and packaging on the cured aluminum-based copper-clad plate;
product detection: and carrying out electrical parameter test on the packaged product.
2. The method for manufacturing a semiconductor power device according to claim 1, wherein the step of dispensing protection specifically comprises the steps of:
fixing a product: fixing the aluminum-based copper-clad plate welded with the binding line on a conveying line;
moving to a station: the aluminum-based copper-clad plate is moved to a working area through a conveying line;
identifying and determining the position: collecting the surface of the aluminum-based copper-clad plate through automatic optical detection equipment, determining the periphery of the element and a dispensing area of the binding line, and preparing to perform dispensing action;
moving and dispensing: the glue dispensing equipment moves to the upper part of the glue dispensing area, and glue dispensing is carried out on the periphery of the glue dispensing area to form a protection ring;
high-temperature curing: the aluminium-based copper-clad plate that the point was glued and is accomplished removes to toasting the district through the transfer chain and dries, makes the protection ring solidification.
3. The method for manufacturing a semiconductor power device according to claim 2, wherein the step of identifying and determining the position comprises the steps of:
and (3) identifying the position: the automatic optical detection equipment collects the surface of the aluminum-based copper-clad plate as an identified image, and identifies the welding point positions of the binding lines and the positions of elements which are connected with the binding lines in a centralized manner;
establishing a coordinate system: establishing a coordinate system by taking the lower left corner of the acquired image as a coordinate origin, the width direction of the acquired image as an x axis and the height direction of the acquired image as a y axis;
determining a dispensing area: selecting the distance between two welding points with the largest span along the x-axis direction as the width d, selecting the distance between two welding points with the largest span along the y-axis direction as the height h, wherein the width a and the height b of the elements which are connected in a line set are defined as the binding lines, and the size c of the welding points is defined as the binding lines;
when a is smaller than D and b is smaller than H, D + n × c, n ═ 1, 2, 3 are taken as the width D of the dispensing area, H + n × c, n ═ 1, 2, 3 are taken as the height H of the dispensing area, the range of D × H is determined as the dispensing area, and dispensing is carried out along the perimeter of the dispensing area.
4. The method according to claim 3, wherein the step of moving the dispensing specifically comprises:
selecting a reference point: in the dispensing area, one of the points is selected as a reference point;
basic dispensing: taking the reference point as a starting point, and carrying out interval type glue dispensing along the perimeter direction of a glue dispensing area at a distance z1 to form a first circle of glue dispensing points;
and (3) multiple dispensing: carrying out interval type dispensing along the perimeter direction of the dispensing area at a distance z2 to form a second circle of dispensing points, wherein the distance z2 is smaller than the distance z 1;
and (3) closing to form a ring: and repeating the glue dispensing steps for multiple times, and continuously reducing the glue dispensing distance until all glue dispensing points are connected to form a protection ring.
5. The method of claim 3, wherein the step of moving the dispensing point further comprises determining a height D and a thickness E of the guard ring according to the size of the product, and assuming that the distance between two adjacent bonding points is C, the distance between the inner wall of the guard ring and the adjacent bonding point is A, the distance between the outer wall of the guard ring and the adjacent bonding point is B, and the height of the binding line is F, the method comprises the following steps: the distance C between two adjacent welding points is more than or equal to 3.5 mm; the height D of the protection ring belongs to [ F/3, F/2 ], and F is larger than 0; the thickness E, A, B of the protection ring is more than or equal to 1 mm.
6. The method for preparing the semiconductor power device according to claim 1, wherein the step of preparing the aluminum-based copper-clad plate specifically comprises: and (3) warehousing the aluminum-based copper-clad plate, performing quality control inspection on the aluminum-based copper-clad plate, and cleaning the qualified aluminum-based copper-clad plate in a multi-stage ultrasonic cleaning mode.
7. The method for manufacturing a semiconductor power device according to claim 1, further comprising a cleaning and drying step between the reflow soldering fixing step and the bonding wire soldering step: and cleaning the aluminum-based copper-clad plate subjected to reflow soldering by using a cleaning agent, and placing the cleaned aluminum-based copper-clad plate into a constant-temperature box body for pre-baking.
8. The method for manufacturing a semiconductor power device according to claim 1, wherein after the bonding wire and the bonding wire are welded, an automatic optical inspection step is further included, wherein the aluminum-based copper-clad plate on which the bonding wire is welded is subjected to automatic optical inspection, a welding point between the bonding wire and the aluminum-based copper-clad plate and a welding point between the bonding wire and the aluminum-based copper-clad plate are inspected, and products with unqualified welding points are screened out by comparing with database parameters of the automatic optical inspection.
9. A packaging module prepared by the preparation method of the semiconductor power device of the claims 1 to 5, which is characterized by comprising an aluminum-based copper-clad plate, a driving HVIC chip, a triode chip, a binding wire, a protection ring and a pin; the driving HVIC chip, the triode chip and the pins are fixed on the aluminum-based copper-clad plate in a soldering mode; the binding line is used for connecting the driving HVIC chip and the aluminum-based copper-clad plate; the guard ring is arranged on the periphery of the binding line and the area where the driving HVIC chip is arranged.
10. The packaged module of claim 9, wherein the guard ring has a height greater than 1/3 and less than 1/2 of the driver HVIC chip; the width of the protection ring is larger than 1 mm; the distance between the protection ring and the welding point of the adjacent binding line is larger than 1 mm.
CN202210355566.0A 2022-04-06 2022-04-06 Preparation method of semiconductor power device and packaging module prepared by same Pending CN114783887A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115333395A (en) * 2022-10-11 2022-11-11 广东汇芯半导体有限公司 Semiconductor circuit having a plurality of transistors
CN116677934A (en) * 2023-05-31 2023-09-01 深圳市华笙光电子有限公司 Production method of soft package lamp strip
CN117457302A (en) * 2023-12-13 2024-01-26 东莞高端精密电子股份有限公司 High-precision resistor, resistor packaging device and packaging process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115333395A (en) * 2022-10-11 2022-11-11 广东汇芯半导体有限公司 Semiconductor circuit having a plurality of transistors
CN116677934A (en) * 2023-05-31 2023-09-01 深圳市华笙光电子有限公司 Production method of soft package lamp strip
CN116677934B (en) * 2023-05-31 2024-05-28 深圳市华笙光电子有限公司 Production method of soft package lamp strip
CN117457302A (en) * 2023-12-13 2024-01-26 东莞高端精密电子股份有限公司 High-precision resistor, resistor packaging device and packaging process
CN117457302B (en) * 2023-12-13 2024-03-22 东莞高端精密电子股份有限公司 High-precision resistor, resistor packaging device and packaging process

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