CN114779311A - Anti-sputtering Faraday cylinder and preparation method thereof - Google Patents
Anti-sputtering Faraday cylinder and preparation method thereof Download PDFInfo
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- CN114779311A CN114779311A CN202210457992.5A CN202210457992A CN114779311A CN 114779311 A CN114779311 A CN 114779311A CN 202210457992 A CN202210457992 A CN 202210457992A CN 114779311 A CN114779311 A CN 114779311A
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- electrode
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- collecting electrode
- sputtering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B27/00—Hand tools, specially adapted for fitting together or separating parts or objects whether or not involving some deformation, not otherwise provided for
Abstract
The invention relates to an anti-sputtering Faraday cylinder which comprises a bias electrode, a collecting electrode, a diaphragm and a shielding cylinder. The bias electrode is formed in a cylindrical shape with both ends open, and a first flange extending outwards is formed at the top of the bias electrode. The collecting electrode is formed into a cylinder shape, the top end of the collecting electrode is opened, the bottom end of the collecting electrode is closed, the diaphragm is in the cylinder shape, the diaphragm is sleeved on the outer side of the bias voltage electrode, and the bias voltage electrode is fixed on the inner wall of the diaphragm through the first flange. The bottom of a shielding section of thick bamboo is sealed, the shielding section of thick bamboo cover is established the outside of collecting the electrode, the collecting electrode passes through the second electrode is fixed the inner wall of a shielding section of thick bamboo, the bottom of a shielding section of thick bamboo with the bottom of collecting the electrode separates. The bias electrode and the collecting electrode and the ground are insulated by vacuum, and only a small part of ceramic is far away from the beam current and the sputtering beam current path, so that the problem of ceramic pollution can be effectively solved.
Description
Technical Field
The invention relates to the field of charged particle beam measurement, in particular to an anti-sputtering Faraday cylinder and a preparation method thereof
Background
The Faraday cage is a basic device for measuring the beam current intensity of charged particles, and aims to realize the beam current intensity measurement by intercepting charged ion beams and collecting charges of the charged ion beams.
The bias electrode and the collecting electrode of the existing faraday cage are insulated from each other and from the ground by insulating ceramics. The main problems of the technology are that the insulating ceramic is easily polluted by the particle beam and the sputtering beam generated by the particle beam, so that the insulating property between the bias electrode and the collecting electrode and the insulating property to the ground are reduced, the bias loading is difficult, and meanwhile, the beam intensity measurement is inaccurate, which is a main bottleneck influencing the measurement precision of the Faraday cup.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide a sputtering prevention faraday cage that does not require large area of insulating ceramics, is vacuum insulated between the bias electrode and the collecting electrode and from the ground, and only a small portion of the ceramics is far away from the beam itself and the path of the sputtering beam, thus effectively solving the problem of ceramic contamination.
In order to achieve the purpose, the invention adopts the following technical scheme:
one aspect of the invention provides an anti-sputtering faraday cup comprising:
the bias electrode is formed into a cylindrical shape with two open ends, and a first flange extending outwards is formed at the top of the bias electrode;
the collecting electrode is formed into a cylindrical shape, the top end of the collecting electrode is opened, the bottom end of the collecting electrode is closed, a second flange extending outwards is formed at the bottom of the collecting electrode, the collecting electrode is positioned right below the bias electrode, and a vacuum insulation layer is formed between the top end of the collecting electrode and the bottom end of the bias electrode in a spaced mode;
the diaphragm is cylindrical, the diaphragm is sleeved on the outer side of the bias electrode, and the bias electrode is fixed on the inner wall of the diaphragm through the first flange;
the bottom of a shielding section of thick bamboo is sealed, the shielding section of thick bamboo cover is established the outside of collecting electrode, collecting electrode passes through the second electrode is fixed the inner wall of a shielding section of thick bamboo, the bottom of a shielding section of thick bamboo with the bottom of collecting electrode separates.
Further, still include the support electrode, the support electrode is the tube-shape, the support electrode cover is established the outside of bias voltage electrode and collecting electrode, first flange with separate and fixed connection through first pottery between the top of support electrode, the second flange with separate and fixed connection through the second pottery between the bottom of support electrode, the top and the bottom of support electrode respectively fixed mounting in the inboard of diaphragm and shielding section of thick bamboo.
Furthermore, the first flange is connected with the top of the support electrode through a first screw, the first screw penetrates through the first flange, the first ceramic and the top of the support electrode to be fixedly connected, and the first ceramic and the vacuum insulation layer are staggered.
Furthermore, the second flange is connected with the bottom of the support electrode through a second screw, the second screw penetrates through the second flange, the second ceramic and the bottom of the support electrode to be fixedly connected, and the second ceramic and the vacuum insulation layer are staggered.
Furthermore, the bottom of the supporting electrode is fixedly connected with the shielding cylinder through a third bolt, the top of the supporting electrode is fixedly connected with the diaphragm through a fourth bolt, and the bottom of the shielding cylinder is separated from the bottom end of the collecting electrode.
Further, the top of the diaphragm is formed with a beam inflow perforation.
Further, the bias electrode and the collecting electrode are both made of oxygen-free copper materials.
Furthermore, the supporting electrode, the diaphragm and the shielding cylinder are all made of stainless steel materials.
Further, the width between the vacuum insulation layers is 5mm, and the bottom end of the collecting electrode is 5mm away from the shielding cylinder.
The invention also provides a preparation method of the anti-sputtering Faraday cage, which comprises the following steps:
fixedly mounting the bias electrode on top of the support electrode via the first ceramic and a first screw;
fixedly mounting the collecting electrode on the bottom of the supporting electrode through the second ceramic and a second screw so as to separate the bias electrode and the collecting electrode;
the shielding cylinder is sleeved outside the collecting electrode and is fixedly installed at the bottom of the supporting electrode through the third screw, so that the bottom end of the shielding cylinder is separated from the bottom end of the collecting electrode;
and sleeving the diaphragm outside the bias electrode, and fixedly installing the diaphragm at the top of the support electrode through the fourth screw.
Due to the adoption of the technical scheme, the invention has the following advantages:
in the invention, a vacuum insulating layer is formed between the bias electrode and the collecting electrode in a separated way, and the insulation resistance value between the bias electrode and the collecting electrode is high by 100 MOmega through vacuum insulation; the collecting electrode and the shielding cylinder are separated to form vacuum insulation, and the insulation resistance value between the collecting electrode and the shielding cylinder is higher than 100M omega.
The whole device does not need large-area insulating ceramics, only a small part of ceramics is far away from the beam current and a sputtering beam flow path, the measurement precision of the Faraday cylinder can be improved, and the insulating ceramics do not need to be frequently replaced, so that the Faraday cylinder is more real and durable.
The anti-sputtering Faraday cylinder device can be applied to the field of particle beam cancer treatment and is used for beam debugging before treatment. The Faraday cup device can be used as a rapid and accurate beam modulation device due to the easy operation, easy maintenance, real and durable skin and accurate measurement.
Drawings
Various additional advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Like reference numerals refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic view of a sputtering prevention Faraday cage;
the reference symbols in the drawings denote the following:
101-bias electrode, 102-collector electrode, 103-support electrode, 104-diaphragm, 105-shield cylinder, 201-first ceramic, 202-second ceramic, 301-first screw, 302-second screw, 303-third screw, 304-fourth screw.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
An embodiment of the invention provides an anti-sputtering Faraday cage, which comprises a bias electrode, a collecting electrode, a diaphragm and a shielding cage. The bias electrode is formed in a cylindrical shape with both ends open, and a first flange extending outward is formed at the top of the bias electrode. The collecting electrode is formed in a cylindrical shape, the top end of the collecting electrode is opened, the bottom end of the collecting electrode is closed, a second flange extending outwards is formed at the bottom of the collecting electrode, the collecting electrode is located right below the bias electrode, and a vacuum insulation layer is formed between the top end of the collecting electrode and the bottom end of the bias electrode in a spaced mode. The diaphragm is cylindrical, the diaphragm sleeve is arranged on the outer side of the bias electrode, and the bias electrode is fixed on the inner wall of the diaphragm through the first flange. The bottom of a shielding section of thick bamboo is sealed, the shielding section of thick bamboo cover is established the outside of collecting electrode, collecting electrode passes through the second electrode is fixed the inner wall of a shielding section of thick bamboo, the bottom of a shielding section of thick bamboo with collecting electrode's bottom separates. The bias electrode and the collecting electrode and the ground are insulated by vacuum, and only a small part of ceramic is far away from the beam current and a sputtering beam flow path, so that the problem of ceramic pollution can be effectively solved.
Example 1
As shown in fig. 1, the anti-sputtering faraday cage provided in embodiment 1 of the present invention includes a bias electrode 101, a collecting electrode 102, a diaphragm 104 and a shielding cylinder 105, wherein the bias electrode 101 acts to suppress secondary electrons by applying a bias voltage, so that a measured value of a flow intensity is more accurate; the collecting electrode 102 is used for blocking and collecting all incident beam current and guiding charges out to data acquisition equipment; the diaphragm 104 is used for protecting the bias electrode 101 and preventing beam current from directly bombarding the bias electrode 101; the shielding cylinder 105 is used for isolating the external complex electromagnetic environment and ensuring accurate measurement value and low noise. The bias electrode 101 includes a cylindrical shape with both ends open and a first flange extending outward from the top. The front, the back, the left and the right of the first flange are respectively provided with a first threaded hole. The bias electrode 101 is preferably made of an oxygen-free copper material, and has an inner diameter of 60mm and an outer diameter of 80 mm.
The collecting electrode 102 is formed in a cylindrical shape, the top end of the collecting electrode 102 is open, the bottom end of the collecting electrode 102 is closed, the bottom of the collecting electrode 102 is formed with a second flange extending outwards, the collecting electrode 102 is located right below the bias electrode 101, and when the collecting electrode 102 is installed, the top end of the collecting electrode 102 is spaced from the bottom end of the bias electrode 101 to form a vacuum insulation layer. The width of the vacuum insulation layer is preferably 5mm, the collecting electrode 102 is preferably made of an oxygen-free copper material, the inner diameter of the collecting electrode 102 is 60mm, and the outer diameter of the second flange is 80 mm. And the front, the back, the left and the right of the second flange are respectively provided with a second threaded hole.
According to the invention, the vacuum insulation layer is formed by separating the top end of the collecting electrode 101 and the bottom end of the bias electrode 102, and the use of ceramics can be reduced by adopting a vacuum insulation mode, so that the ceramics are prevented from being polluted by sputtering, and the beam current measurement precision is improved.
The support electrode 103 is cylindrical, the support electrode 103 is sleeved outside the bias electrode 101 and the collecting electrode 102, the first flange is separated from the top of the support electrode 103 by a first ceramic 201 and is fixedly connected to the top, and the second flange is separated from the support electrode 103 by a second ceramic 202 and is fixedly connected to the top. The top and bottom of the support electrode 103 are respectively formed with a third flange and a fourth flange extending outwards, the support electrode 103 is preferably made of stainless steel material, the inner diameter of the support electrode 103 is 72mm, and the outer diameter of the third flange and the fourth flange is 80 mm. The bias electrode 101 is fixedly connected with the third flange by a first screw 301 which sequentially passes through the first threaded hole and the first ceramic 201. The collecting electrode 102 sequentially penetrates through the second threaded hole through a second screw 302 to be fixedly connected with the second ceramic 202 and the fourth flange, meanwhile, the interval between the bottom of the bias electrode 101 and the top of the collecting electrode 102 is 5mm, a vacuum insulation layer is formed, the use of ceramic can be reduced by adopting a vacuum insulation mode, the pollution of the ceramic by sputtering is avoided, and the beam current measuring precision is improved.
The first flange, the third flange and the first ceramic 201 are not limited to being fixedly connected by screws, and may be bonded or connected by other methods known in the art.
The diaphragm 104 is cylindrical, the diaphragm 104 is sleeved on the outer side of the bias electrode 101, the top of the diaphragm 104 is provided with a perforation, the diaphragm 104 is preferably made of stainless steel materials, the inner diameter of the beam flowing into the perforation is 50mm, and the inner diameter of the cylinder is 85 mm. The diaphragm 104 is provided with a threaded hole at the front, rear, left and right sides of the side wall.
The bottom end of the shielding cylinder 105 is closed, the shielding cylinder 105 is sleeved on the outer side of the collecting electrode 102, the collecting electrode 102 is fixed on the inner wall of the shielding cylinder 105 through the second electrode, the bottom of the shielding cylinder 105 is separated from the bottom end of the collecting electrode 102, and the separation distance is 5 mm. The shielding cylinder 102 is preferably made of stainless steel material, and the inner diameter of the cylinder is 85 mm. The bottom of the supporting electrode 103 is fixedly connected with the shielding cylinder 102 through a third screw 303, the top of the supporting electrode 103 is fixedly connected with the diaphragm 104 through a fourth screw 304, and the bottom of the shielding cylinder 105 is spaced from the bottom end of the collecting electrode 102.
In the invention, a vacuum insulating layer is formed between a bias electrode 101 and a collecting electrode 102 at intervals, and the insulation resistance value between the two electrodes is high by 100 MOmega through vacuum insulation; the collecting electrode 102 and the shield cylinder 105 are spaced apart from each other to form a vacuum insulation, and the insulation resistance between the two is higher than 100M Ω.
The whole device does not need large-area insulating ceramics, only a small part of ceramics, and the ceramics are far away from the beam current and the sputtering beam current path, so that the measurement precision of the Faraday cylinder can be improved, the insulating ceramics do not need to be frequently replaced, and the Faraday cylinder is more real and durable.
The preparation method of the anti-sputtering Faraday cylinder comprises the following steps:
fixedly mounting the bias electrode 101 on the top of the support electrode 103 through the first ceramic 201 and a first screw;
fixedly mounting the collecting electrode 102 at the bottom of the supporting electrode 103 through the second ceramic 202 and a second screw, so that the biasing electrode 101 and the collecting electrode 102 are separated;
sleeving the shielding cylinder 105 outside the collecting electrode 102, and fixedly installing the shielding cylinder 105 at the bottom of the supporting electrode 103 through the third screw, so that the bottom end of the shielding cylinder 105 is separated from the bottom end of the collecting electrode 102;
the diaphragm 104 is sleeved outside the bias electrode 101 and is fixedly mounted on the top of the support electrode 103 through the fourth screw.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. An anti-sputtering faraday cup, comprising:
the bias electrode is formed into a cylindrical shape with two open ends, and a first flange extending outwards is formed at the top of the bias electrode;
the collecting electrode is formed in a cylindrical shape, the top end of the collecting electrode is opened, the bottom end of the collecting electrode is closed, a second flange extending outwards is formed at the bottom of the collecting electrode, the collecting electrode is located right below the bias electrode, and a vacuum insulation layer is formed between the top end of the collecting electrode and the bottom end of the bias electrode in a spaced mode;
the diaphragm is cylindrical, the diaphragm is sleeved on the outer side of the bias electrode, and the bias electrode is fixed on the inner wall of the diaphragm through the first flange;
the bottom of a shielding section of thick bamboo is sealed, the shielding section of thick bamboo cover is established the outside of collecting electrode, collecting electrode passes through the second electrode is fixed the inner wall of a shielding section of thick bamboo, the bottom of a shielding section of thick bamboo with the bottom of collecting electrode separates.
2. The anti-sputtering faraday cup as defined in claim 1, further comprising a cylindrical support electrode, wherein the support electrode is sleeved outside the bias electrode and the collecting electrode, the first flange is separated from and fixedly connected to a top of the support electrode by a first ceramic, the second flange is separated from and fixedly connected to a bottom of the support electrode by a second ceramic, and the top and the bottom of the support electrode are fixedly mounted inside the diaphragm and the shielding cylinder, respectively.
3. The anti-sputtering faraday cup as recited in claim 2, wherein said first flange is connected to a top portion of said support electrode by a first screw, said first screw passes through said first flange, said first ceramic is fixedly connected to a top portion of said support electrode, and said first ceramic is offset from said vacuum insulation layer.
4. The anti-sputtering faraday cup as recited in claim 2, wherein said second flange is connected to a bottom of said supporting electrode by a second screw, said second screw passes through said second flange, said second ceramic is fixedly connected to a bottom of said supporting electrode, and said second ceramic is offset from said vacuum insulating layer.
5. The anti-sputtering faraday cup as defined in claim 2, wherein a bottom portion of the supporting electrode is fixedly connected to the shielding cylinder via a third bolt, a top portion of the supporting electrode is fixedly connected to the diaphragm via a fourth bolt, and a bottom portion of the shielding cylinder is spaced apart from a bottom end of the collecting electrode.
6. The anti-sputtering faraday cage of claim 1, wherein a top of said aperture is formed with beam inflow perforations.
7. The anti-sputtering faraday cage of claim 1, wherein said biasing electrode and collecting electrode are both made of an oxygen free copper material.
8. The anti-sputtering faraday cup as recited in claim 1, wherein said support electrode, said aperture and said shielding can are made of stainless steel.
9. The anti-sputtering faraday cage of claim 1, wherein a width between said vacuum insulation layers is 5mm, and a bottom end of said collecting electrode is spaced 5mm from said shielding cage.
10. The method for making an anti-sputtering faraday cage as recited in claim 5, comprising the steps of:
fixedly mounting the bias electrode on top of the support electrode via the first ceramic and a first screw;
fixedly mounting the collecting electrode on the bottom of the supporting electrode through the second ceramic and a second screw so as to separate the bias electrode and the collecting electrode;
the shielding cylinder is sleeved outside the collecting electrode and is fixedly installed at the bottom of the supporting electrode through the third screw, so that the bottom end of the shielding cylinder is separated from the bottom end of the collecting electrode;
and sleeving the diaphragm outside the bias electrode, and fixedly installing the diaphragm at the top of the support electrode through the fourth screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210457992.5A CN114779311A (en) | 2022-04-28 | 2022-04-28 | Anti-sputtering Faraday cylinder and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210457992.5A CN114779311A (en) | 2022-04-28 | 2022-04-28 | Anti-sputtering Faraday cylinder and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN114779311A true CN114779311A (en) | 2022-07-22 |
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| CN202210457992.5A Pending CN114779311A (en) | 2022-04-28 | 2022-04-28 | Anti-sputtering Faraday cylinder and preparation method thereof |
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| CN (1) | CN114779311A (en) |
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- 2022-04-28 CN CN202210457992.5A patent/CN114779311A/en active Pending
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