CN114758889A - 一种高容薄层化陶瓷电容器、介质材料及其制备方法 - Google Patents
一种高容薄层化陶瓷电容器、介质材料及其制备方法 Download PDFInfo
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- CN114758889A CN114758889A CN202210259233.8A CN202210259233A CN114758889A CN 114758889 A CN114758889 A CN 114758889A CN 202210259233 A CN202210259233 A CN 202210259233A CN 114758889 A CN114758889 A CN 114758889A
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- Prior art keywords
- ceramic capacitor
- acetylacetonate
- dielectric material
- tio
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 45
- 239000003989 dielectric material Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910010252 TiO3 Inorganic materials 0.000 claims abstract description 32
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 24
- -1 transition metal acetylacetonate Chemical class 0.000 claims abstract description 19
- 239000000654 additive Substances 0.000 claims abstract description 18
- 230000000996 additive effect Effects 0.000 claims abstract description 17
- AKTIAGQCYPCKFX-FDGPNNRMSA-L magnesium;(z)-4-oxopent-2-en-2-olate Chemical compound [Mg+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O AKTIAGQCYPCKFX-FDGPNNRMSA-L 0.000 claims abstract description 16
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 11
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 7
- HYZQBNDRDQEWAN-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;manganese(3+) Chemical compound [Mn+3].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O HYZQBNDRDQEWAN-LNTINUHCSA-N 0.000 claims abstract description 5
- MFWFDRBPQDXFRC-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;vanadium Chemical compound [V].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O MFWFDRBPQDXFRC-LNTINUHCSA-N 0.000 claims abstract description 5
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 claims abstract description 5
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims abstract description 5
- 239000011575 calcium Substances 0.000 claims description 31
- 239000000243 solution Substances 0.000 claims description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000002002 slurry Substances 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- 239000004014 plasticizer Substances 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 10
- 238000001354 calcination Methods 0.000 claims description 10
- JXDXDSKXFRTAPA-UHFFFAOYSA-N calcium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[Ca+2].[Ti+4].[Ba+2] JXDXDSKXFRTAPA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000725 suspension Substances 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 9
- 239000012266 salt solution Substances 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- 238000005303 weighing Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000001694 spray drying Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 5
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000001110 calcium chloride Substances 0.000 claims description 4
- 229910001628 calcium chloride Inorganic materials 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005238 degreasing Methods 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 239000011267 electrode slurry Substances 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 230000001376 precipitating effect Effects 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 150000003624 transition metals Chemical class 0.000 abstract description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract description 2
- 239000011858 nanopowder Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BRXOKRLIIVYICJ-UHFFFAOYSA-N butoxy(trihydroxy)silane Chemical compound CCCCO[Si](O)(O)O BRXOKRLIIVYICJ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001132 ultrasonic dispersion Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 description 2
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 1
- DUFCMRCMPHIFTR-UHFFFAOYSA-N 5-(dimethylsulfamoyl)-2-methylfuran-3-carboxylic acid Chemical compound CN(C)S(=O)(=O)C1=CC(C(O)=O)=C(C)O1 DUFCMRCMPHIFTR-UHFFFAOYSA-N 0.000 description 1
- 229910014472 Ca—O Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001959 inorganic nitrate Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- VLOPEOIIELCUML-UHFFFAOYSA-L vanadium(2+);sulfate Chemical compound [V+2].[O-]S([O-])(=O)=O VLOPEOIIELCUML-UHFFFAOYSA-L 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62802—Powder coating materials
- C04B35/62842—Metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
- C04B2235/3234—Titanates, not containing zirconia
- C04B2235/3236—Alkaline earth titanates
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
一种高容薄层化陶瓷电容器、介质材料及其制备方法，一种高容薄层化陶瓷电容器用介质材料，由(Ba1‑xCax)TiO3与添加剂按摩尔份比100:1.8‑8的比例组成，其中0＜x≤0.05；添加剂由乙酰丙酮镁、正硅酸丁酯、过渡金属乙酰丙酮盐按摩尔份比0.8‑1.2:0.5‑0.8:0.2‑4的比例组成；过渡金属乙酰丙酮盐包括乙酰丙酮锰、乙酰丙酮钇、乙酰丙酮钒和乙酰丙酮锆中的一种或多种；本申请限定高容薄层化陶瓷电容器用介质材料的具体组成，采用水热法制备的(Ba1‑xCax)TiO3纳米粉体为基体，采用化学包覆法实现镁金属及其他过渡金属的均匀包覆，使制得的陶瓷电容器具有介电损耗低、介电常数≥2000、良好的绝缘电阻的特点，温度特性满足X5R的要求。
Description
技术领域
本发明属于陶瓷电容器制备领域，具体涉及一种高容薄层化陶瓷电容器、介质材料及其制备方法。
背景技术
随着电器和电子设备的小型化、高性能的快速发展，这些设备中使用的多层陶瓷电容器也面临小尺寸和高可靠性要求。为了实现更小尺寸和更大容量，这就要求多层陶瓷电容器的介质厚度越来越薄。介质层的厚度降低，从5μm降低至1μm，甚至更薄。这就对介质层介质材料的晶粒尺寸有了更高的要求。
近年来，国外高容MLCC材料的研究者提出，钙掺杂的钛酸钡材料，由于钙部分取代了A位，Ca-O键可有效地提高相对电压下的耐压可靠性。因此薄层高容电容器用陶瓷粉料其在晶粒上应选择尺寸精细化的纳米级钛酸钡钙材料(100～200nm级)。传统分散混合钛酸钡钙及氧化物掺杂的方法不可避免地出现掺杂元素团聚的现象，导致分散不均匀的情况。如何更均匀，有效的进行元素掺杂，控制陶瓷介质材料的组成，烧结工艺，以获得超细晶、粒度均匀且高性能的MLCC材料来满足大容量、超薄层贱金属内电极多层陶瓷电容器的要求是本发明要解决的问题。
发明内容
本发明的目的是克服现有技术的缺点，提供一种高容薄层化陶瓷电容器用介质材料及其制备方法，另一目的是提供一种采用上述介质材料制备的陶瓷电容器及其制备方法。
本发明采用如下技术方案：
一种高容薄层化陶瓷电容器用介质材料，由(Ba1-xCax)TiO3与添加剂按摩尔份比100:1.8-8的比例组成，其中0＜x≤0.05；添加剂由乙酰丙酮镁、正硅酸丁酯、过渡金属乙酰丙酮盐按摩尔份比0.8-1.2:0.5-0.8:0.2-4的比例组成；
过渡金属乙酰丙酮盐包括乙酰丙酮锰、乙酰丙酮钇、乙酰丙酮钒和乙酰丙酮锆中的一种或多种。
进一步的，所述(Ba1-xCax)TiO3粒径为100-200nm。
一种高容薄层化陶瓷电容器用介质材料的制备方法，包括以下步骤：
步骤一，采用水热法制备(Ba1-xCax)TiO3；
步骤二，将步骤一制备的(Ba1-xCax)TiO3溶于异丙醇溶剂中，超声波分散0.5-2h，得到悬浮液；
步骤三，将乙醇、乙酰丙酮、去离子水按体积比1：(1-8)：(5-30)的比例混合均匀，得到有机溶液；
步骤四，将乙酰丙酮镁与过渡金属乙酰丙酮盐按摩尔份比称重，溶于步骤三制得的有机溶液中，再添加正硅酸丁酯，得到混合有机盐溶液；
步骤五，将步骤四制得的有机盐溶液添加到步骤二制得的悬浮液中，搅拌1-2h，混合均匀；再调节pH至7-10，磁力搅拌0.5-2h；
步骤六，将步骤五获得的混合溶液沉化5-12h后，进行喷雾干燥，干燥后的粉体于400-600℃的温度下，煅烧1-4h，得到所述多层瓷介电容器用介质材料。
进一步的，所述(Ba1-xCax)TiO3的具体制备方法包括：按照(Ba1-xCax)TiO3的化学计量比，分别将四氯化钛、氯化钙溶于去离子水中，添加一定比例的Ba(OH)2溶液，置于高压反应釜中，在150～200℃下反应2～5h，冷却后进行洗涤，过滤，烘干后，在300～500℃下煅烧2～4h，得到钛酸钡钙(Ba1-xCax)TiO3。
进一步的，步骤五中，采用氨水调节pH至7-10。
一种高容薄层化陶瓷电容器，采用以上任一项所述的介质材料制成。
一种高容薄层化陶瓷电容器的制备方法，包括：将制备的介质材料经分散制备成浆料，通过流延机制成介质薄膜；然后利用丝网印刷机在介质薄膜表面印刷镍电极浆料；经叠压、水压、切片、脱脂后，在1200-1280℃的还原气氛下烧结，倒角后端铜，在保护气氛下烧附，电镀后获得所述高容薄层化陶瓷电容器。
进一步的，所述介质薄膜的厚度为1-3um。
进一步的，所述介质材料分散制备成浆料时，按介质材料：甲苯：乙醇：分散剂：增塑剂：粘剂＝100：(20-30)：(20-30)：(8-15)：(2-6)：(5-16)的比例组成。
进一步的，所述增塑剂为DOP增塑剂，所述粘剂为PVB粘剂。
由上述对本发明的描述可知，与现有技术相比，本发明的有益效果是：
第一，本申请限定高容薄层化陶瓷电容器用介质材料的具体组成，采用水热法制备的(Ba1-xCax)TiO3纳米粉体为基体，采用化学包覆法实现镁金属及其他过渡金属的均匀包覆，使制得的陶瓷电容器具有介电损耗低、介电常数≥2000、良好的绝缘电阻的特点，温度特性满足X5R的要求；
第二，限定过渡金属乙酰丙酮盐具体为锰、钇、钒和镐的乙酰丙酮盐，与乙酰丙酮镁配合，并加入正硅酸丁酯，以较好的实现添加剂与主成分之间的均匀混合，使得介质材料微观结构均匀，能够提高电容温度特性及可靠性，使制得的电容器温度特性满足EIA X5R的标准。
具体实施方式
以下通过具体实施方式对本发明作进一步的描述。
一种高容薄层化陶瓷电容器用介质材料，由(Ba1-xCax)TiO3与添加剂按摩尔份比100:1.8-8的比例组成，其中0＜x≤0.05，且(Ba1-xCax)TiO3粒径为100-200nm。
添加剂由乙酰丙酮镁、正硅酸丁酯、过渡金属乙酰丙酮盐按摩尔份比0.8-1.2:0.5-0.8:0.2-4的比例组成；具体的，过渡金属乙酰丙酮盐包括乙酰丙酮锰、乙酰丙酮钇、乙酰丙酮钒和乙酰丙酮锆中的一种或多种。
其制备方法，包括以下步骤：
步骤一，采用水热法制备(Ba1-xCax)TiO3：按照(Ba1-xCax)TiO3的化学计量比，分别将四氯化钛、氯化钙溶于去离子水中，添加一定比例的Ba(OH)2溶液，置于高压反应釜中，在150～200℃下反应2～5h，冷却后进行洗涤，过滤，烘干后，在300～500℃下煅烧2～4h，得到钛酸钡钙(Ba1-xCax)TiO3；
步骤二，将步骤一制备的(Ba1-xCax)TiO3溶于异丙醇溶剂中，超声波分散0.5-2h，得到悬浮液；
步骤三，将乙醇、乙酰丙酮、去离子水按体积比1：(1-8)：(5-30)的比例混合均匀，得到有机溶液；
步骤四，将乙酰丙酮镁与过渡金属乙酰丙酮盐按摩尔份比称重，溶于步骤三制得的有机溶液中，再添加正硅酸丁酯，得到混合有机盐溶液；
步骤五，将步骤四制得的有机盐溶液添加到步骤二制得的悬浮液中，搅拌1-2h，混合均匀；再采用氨水调节pH至7-10，磁力搅拌0.5-2h；
步骤六，将步骤五获得的混合溶液沉化5-12h后，进行喷雾干燥，干燥后的粉体于400-600℃的温度下，煅烧1-4h，得到所述多层瓷介电容器用介质材料。
一种高容薄层化陶瓷电容器，采用上述的介质材料制成；其制备方法，包括：将制备的介质材料经分散制备成浆料，通过流延机制成1-3um的介质薄膜；然后利用丝网印刷机在介质薄膜表面印刷镍电极浆料；经叠压、水压、切片、脱脂后，在1200-1280℃的还原气氛下烧结，倒角后端铜，在保护气氛下烧附，电镀后获得所述高容薄层化陶瓷电容器。
其中，介质材料分散制备成浆料时，按介质材料：甲苯：乙醇：分散剂：增塑剂：粘剂＝100：(20-30)：(20-30)：(8-15)：(2-6)：(5-16)的比例组成；具体的，增塑剂为DOP增塑剂，所述粘剂为PVB粘剂。
实施例1
一种高容薄层化陶瓷电容器用介质材料，由(Ba0.97Ca0.03)TiO3与添加剂按摩尔份比100:1.8-8的比例组成，其中，(Ba0.97Ca0.03)TiO3粒径为200nm。
添加剂由乙酰丙酮镁、正硅酸丁酯、过渡金属乙酰丙酮盐按摩尔份比1.2:0.8:2.2的比例组成；具体的，过渡金属乙酰丙酮盐包括0.5摩尔份的乙酰丙酮锰、0.5摩尔份的乙酰丙酮钇、0.4摩尔份的乙酰丙酮钒和0.8摩尔份的乙酰丙酮锆。
其制备方法，包括以下步骤：
步骤一，采用水热法制备(Ba0.97Ca0.03)TiO3：按照(Ba0.97Ca0.03)TiO3的化学计量比，分别将四氯化钛、氯化钙溶于去离子水中，添加一定比例的Ba(OH)2溶液，置于高压反应釜中，在150℃下反应3h，冷却后进行洗涤，过滤，烘干后，在500℃下煅烧3h，得到钛酸钡钙(Ba0.97Ca0.03)TiO3；
步骤二，将步骤一制备的(Ba0.97Ca0.03)TiO3溶于异丙醇溶剂中，超声波分散1h，得到悬浮液；
步骤三，将乙醇、乙酰丙酮、去离子水按体积比1：3：24的比例混合均匀，得到有机溶液；
步骤四，将乙酰丙酮镁与过渡金属乙酰丙酮盐按摩尔份比称重，溶于步骤三制得的有机溶液中，再添加正硅酸丁酯，得到混合有机盐溶液；
步骤五，将步骤四制得的有机盐溶液添加到步骤二制得的悬浮液中，搅拌1h，混合均匀；再采用氨水调节pH至9.5，磁力搅拌1h；
步骤六，将步骤五获得的混合溶液沉化10h后，进行喷雾干燥，干燥后的粉体于600℃的温度下，煅烧2h，得到所述多层瓷介电容器用介质材料。
一种高容薄层化陶瓷电容器，采用上述的介质材料制成；其制备方法，包括：将制备的介质材料经分散制备成浆料，通过流延机制成2um的介质薄膜；然后利用丝网印刷机在介质薄膜表面印刷镍电极浆料；经叠压、水压、切片、脱脂后，在1250℃的还原气氛下烧结，倒角后端铜，在保护气氛下烧附，电镀后获得所述高容薄层化陶瓷电容器。
其中，介质材料分散制备成浆料时，按介质材料：甲苯：乙醇：分散剂：增塑剂：粘剂＝100：25：25：12：4：8的比例组成；具体的，增塑剂为DOP增塑剂，所述粘剂为PVB粘剂。
实施例2-8，原料配比见表1，制作方法与实施例1一样。
对比例1
陶瓷电容器用介质材料的制备方法，具体包括以下步骤：
步骤一，实施例1中的水热法制备主成分(Ba0.97Ca0.03)TiO3；
步骤二，按照100摩尔份称重水热法制备的钛酸钡钙，分别添加纳米级氧化物，包括1.2摩尔份MgO，0.5摩尔份的Mn3O4，0.5摩尔份的Y2O3，0.4摩尔份的V2O5，0.8摩尔份的ZrO2以及0.8摩尔份的SiO2。以去离子水为溶剂，立式球磨机研磨分散6h，过滤后于120℃下烘干，得到陶瓷电容器用介质材料。
对比例2
陶瓷电容器用介质材料的制备方法，具体包括以下步骤：
步骤一，按照实施例1中的水热法制备主成分(Ba0.97Ca0.03)TiO3；
步骤二，按照100摩尔份称重水热法制备的钛酸钡钙，将粉体充分溶于异丙醇溶剂中，超声分散1h，得到分散良好的悬浮液；
步骤三，将1.2摩尔份乙酸镁、0.5摩尔份乙酸锰、0.5摩尔份乙酸钇、0.8摩尔份乙酸锆称重，溶于去离子水中；
步骤四，将0.8摩尔份的正硅酸乙酯滴加进乙醇中，并搅拌均匀，得到有机溶液；
步骤五，将上述三的乙酸盐溶液与四的有机溶液分别添加到步骤二中的悬浮液中，搅拌1h，混合均匀；
步骤六，往步骤五溶液中滴加氨水，调节PH至9.5，磁力搅拌1h；
步骤七，沉化10h后，浆料进行喷雾干燥；干燥后的粉体于600℃煅烧2h，即得到陶瓷电容器用介质材料。
对比例3
陶瓷电容器用介质材料的制备方法，具体包括以下步骤：
步骤一，按照实施例1中的水热法制备主成分(Ba0.97Ca0.03)TiO3；
步骤二，按照100摩尔份称重水热法制备的钛酸钡钙，将粉体充分溶于离子水中，超声分散1h，得到分散良好的溶液；
步骤三，将1.2摩尔份硝酸镁、0.5摩尔份硝酸锰、0.5摩尔份硝酸钇、0.8摩尔份硝酸锆、0.4摩尔份硫酸钒称重，溶于去离子水中；
步骤四，将步骤三的溶液添加进步骤二中，搅拌1h；
步骤五，在上述四溶液中添加氨水，PH调整到9.5，磁力搅拌1h；
步骤六，沉化10h后，浆料进行喷雾干燥；干燥后的粉体于600℃煅烧2h，即得到陶瓷电容器用介质材料。
对比例1-3中，其陶瓷电容器的制作方法与实施例1中陶瓷电容器的制作方法一样；对比例4-8，原料配比见表1，其整体制作方法与实施例1一样。
表1实施例成分表
将实施例1～8及对比例1～8所制得的陶瓷电容器经测试获得如下数据，具体参见表2：
表2 MLCC介电性能表
通过上述表格可知：
(1)对比例1使用传统的纳米氧化物掺杂钛酸钡钙机械球磨工艺，制备的介质材料提供的高容量MLCC：其DF损耗偏高，且电容温度特性较为临界，可能为纳米氧化物出现团聚未分散开；
(2)对比例2～3化学包覆法中金属盐溶液分别为有机乙酸盐和无机硝酸盐，对比例2提供的高容量MLCC的电容温度特性有超限；对比例3提供的高容量MLCC的DF损耗较大；
(3)对比例4～6中，增加其他过渡金属的乙酰丙酮盐，其提供的MLCC的K值出现降低(＜2000)，且电容温度特性恶化；
(4)对比例7中，缺少正硅酸丁酯作为添加剂，其晶界内缺少液相润湿，瓷体的烧熟度降低，损耗偏大且电容温度特性超限；对比例8中，缺少乙酰丙酮镁作为添加剂，其晶粒内部的“壳-芯”结构减少，电容温度特性恶化加剧；
(5)实施例1～8中的化学包覆法，限定过渡金属乙酰丙酮盐具体为锰、钇、钒和镐的乙酰丙酮盐，与乙酰丙酮镁配合，并加入正硅酸丁酯，以较好的实现添加剂与主成分之间的均匀混合，使得介质材料微观结构均匀，能够提高电容温度特性及可靠性，使制得的电容器，具有介电损耗低，介电常数≥2000，良好的绝缘电阻，电容温度特性满足EIA X5R标准等特点。
以上所述，仅为本发明的较佳实施例而已，故不能以此限定本发明实施的范围，即依本发明申请专利范围及说明书内容所作的等效变化与修饰，皆应仍属本发明专利涵盖的范围内。
Claims (10)
1.一种高容薄层化陶瓷电容器用介质材料，其特征在于：由(Ba1-xCax)TiO3与添加剂按摩尔份比100:1.8-8的比例组成，其中0＜x≤0.05；添加剂由乙酰丙酮镁、正硅酸丁酯、过渡金属乙酰丙酮盐按摩尔份比0.8-1.2:0.5-0.8:0.2-4的比例组成；
过渡金属乙酰丙酮盐包括乙酰丙酮锰、乙酰丙酮钇、乙酰丙酮钒和乙酰丙酮锆中的一种或多种。
2.根据权利要求1所述的一种高容薄层化陶瓷电容器用介质材料，其特征在于：所述(Ba1-xCax)TiO3粒径为100-200nm。
3.一种高容薄层化陶瓷电容器用介质材料的制备方法，其特征在于：包括以下步骤：
步骤一，采用水热法制备(Ba1-xCax)TiO3；
步骤二，将步骤一制备的(Ba1-xCax)TiO3溶于异丙醇溶剂中，超声波分散0.5-2h，得到悬浮液；
步骤三，将乙醇、乙酰丙酮、去离子水按体积比1：(1-8)：(5-30)的比例混合均匀，得有机溶液；
步骤四，将乙酰丙酮镁与过渡金属乙酰丙酮盐按摩尔份比称重，溶于步骤三制得的有机溶液中，再添加正硅酸丁酯，得到混合有机盐溶液；
步骤五，将步骤四制得的有机盐溶液添加到步骤二制得的悬浮液中，搅拌1-2h，混合均匀；再调节pH至7-10，磁力搅拌0.5-2h；
步骤六，将步骤五获得的混合溶液沉化5-12h后，进行喷雾干燥，干燥后的粉体于400-600℃的温度下，煅烧1-4h，得到所述多层瓷介电容器用介质材料。
4.根据权利要求3所述的一种高容薄层化陶瓷电容器用介质材料的制备方法，其特征在于：所述(Ba1-xCax)TiO3的具体制备方法包括：按照(Ba1-xCax)TiO3的化学计量比，分别将四氯化钛、氯化钙溶于去离子水中，添加一定比例的Ba(OH)2溶液，置于高压反应釜中，在150～200℃下反应2～5h，冷却后进行洗涤，过滤，烘干后，在300～500℃下煅烧2～4h，得到钛酸钡钙(Ba1-xCax)TiO3。
5.根据权利要求3所述的一种高容薄层化陶瓷电容器用介质材料的制备方法，其特征在于：步骤五中，采用氨水调节pH至7-10。
6.一种高容薄层化陶瓷电容器，其特征在于：采用权利要求1所述的介质材料制成。
7.一种高容薄层化陶瓷电容器的制备方法，其特征在于：包括：将制备的介质材料经分散制备成浆料，通过流延机制成介质薄膜；然后利用丝网印刷机在介质薄膜表面印刷镍电极浆料；经叠压、水压、切片、脱脂后，在1200-1280℃的还原气氛下烧结，倒角后端铜，在保护气氛下烧附，电镀后获得所述高容薄层化陶瓷电容器。
8.根据权利要求7所述的一种高容薄层化陶瓷电容器的制备方法，其特征在于：所述介质薄膜的厚度为1-3um。
9.根据权利要求7所述的一种高容薄层化陶瓷电容器的制备方法，其特征在于：所述介质材料分散制备成浆料时，按介质材料：甲苯：乙醇：分散剂：增塑剂：粘剂＝100：(20-30)：(20-30)：(8-15)：(2-6)：(5-16)的比例组成。
10.根据权利要求9所述的一种高容薄层化陶瓷电容器的制备方法，其特征在于：所述增塑剂为DOP增塑剂，所述粘剂为PVB粘剂。
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| CN102592825A (zh) * | 2011-01-10 | 2012-07-18 | 福建火炬电子科技股份有限公司 | 一种陶瓷电容器及其制备方法 |
| US20210328046A1 (en) * | 2018-11-30 | 2021-10-21 | Ryoichi Saotome | Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor |
| CN113800902A (zh) * | 2021-09-18 | 2021-12-17 | 福建火炬电子科技股份有限公司 | 一种具有高介电常数的bme瓷介电容器及其制备方法 |
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| CN102592825A (zh) * | 2011-01-10 | 2012-07-18 | 福建火炬电子科技股份有限公司 | 一种陶瓷电容器及其制备方法 |
| US20210328046A1 (en) * | 2018-11-30 | 2021-10-21 | Ryoichi Saotome | Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor |
| CN113800902A (zh) * | 2021-09-18 | 2021-12-17 | 福建火炬电子科技股份有限公司 | 一种具有高介电常数的bme瓷介电容器及其制备方法 |
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