CN114750317A - Method for vertically cutting silicon rod in three lines, cutting equipment and cutting system - Google Patents
Method for vertically cutting silicon rod in three lines, cutting equipment and cutting system Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 296
- 238000000034 method Methods 0.000 title claims abstract description 32
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- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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Abstract
The embodiment of the application provides a method, cutting equipment and a cutting system for vertically cutting a silicon rod in three lines, wherein the method comprises the following steps: the silicon rod is cut once along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are parallel, and two parallel first side surfaces are formed by cutting and are respectively positioned on two sides of the central line of the silicon rod; a second side surface formed by cutting through the other cutting line is vertically intersected with the first side surface, and the second side surface passes through the central line of the silicon rod; and cutting the silicon rod through two cutting lines along the length direction of the silicon rod, wherein the two cutting lines are vertically intersected with the first side surface, and the two formed cutting surfaces are respectively positioned at two sides of the second side surface to obtain two small silicon rods with rectangular cross sections. According to the method, the cutting equipment and the cutting system for vertically cutting the silicon rod in the three-wire mode, the silicon rod with a small size can be directly obtained, the silicon wafer is formed through slicing, the requirement for the small-size silicon wafer is met, and the yield can be improved.
Description
Technical Field
The application relates to a hard material cutting technology, in particular to a method, cutting equipment and a cutting system for vertically cutting a silicon rod in three lines.
Background
With the development of heterojunction cells, the demand for small silicon wafers is increasing, and the demand for thin wafers is also large. The thickness of the silicon wafer is from 180 micrometers to 150 micrometers originally, the future market even needs the silicon wafer with the thickness of 100 micrometers, the thinner the silicon wafer is, the larger the cutting difficulty is, and the more difficult the cutting quality is to ensure.
In a traditional scheme, a cylindrical single crystal silicon rod is generally cut into a square rod, then the square rod is cut into a large silicon wafer, scribing and cutting are carried out on the large silicon wafer to form a small silicon wafer in a laser technology, but the laser scribing process can cause damage and defect states on the cross section of the small silicon wafer, and the conversion efficiency of a finally processed heterojunction battery is seriously influenced.
Disclosure of Invention
In order to solve one of the technical defects, the embodiment of the application provides a method, a cutting device and a cutting system for vertically cutting a silicon rod in three lines.
According to a first aspect of embodiments of the present application, there is provided a method for vertically cutting a silicon rod in three lines, comprising:
the silicon rod is cut once along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are parallel, two parallel first side surfaces are formed through cutting of the two cutting lines, and the two first side surfaces are respectively positioned on two sides of the central line of the silicon rod; a second side surface formed by cutting through the other cutting line is vertically intersected with the first side surface, and the second side surface passes through the central line of the silicon rod;
And cutting the silicon rod through two cutting lines along the length direction of the silicon rod, wherein the two cutting lines are vertically intersected with the first side surface, and the two formed cutting surfaces are respectively positioned at two sides of the second side surface to obtain two small silicon rods with rectangular cross sections.
According to a second aspect of embodiments of the present application, there is provided a cutting apparatus applying the method for vertically cutting a silicon rod in three lines as described above, comprising:
a base;
the bearing table is arranged on the base and used for bearing a silicon rod;
the linear cutting device is arranged on the base and can move relative to the bearing table along the length direction of the silicon rod; the wire cutting device comprises a wire wheel support, and a single wire cutting wheel set, a double wire cutting wheel set and/or a three wire cutting wheel set which are arranged on the wire wheel support, wherein a cutting wire is wound on the single wire cutting wheel set and is used for cutting the silicon rod through the cutting wire; the double-wire cutting wheel set is wound with two cutting wires which are parallel to each other and used for cutting the silicon rod through the two cutting wires; the three-wire cutting wheel set is wound with three cutting lines, wherein two cutting lines are parallel and vertical to the other cutting line.
According to a third aspect of embodiments of the present application, there is provided a cutting system for three-wire sagging cut silicon rods, comprising:
A cutting device as described above; and grinding equipment for grinding the silicon rod.
According to the technical scheme provided by the embodiment of the application, the silicon rod is firstly cut once along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are parallel, two parallel first side surfaces are formed by cutting through the two cutting lines, and the two first side surfaces are respectively positioned on two sides of the central line of the silicon rod; a second side surface formed by cutting through the other cutting line is vertically intersected with the first side surface, and the second side surface passes through the central line of the silicon rod; and then cutting the silicon rod along the length direction of the silicon rod through two cutting lines, wherein the two cutting lines are vertically intersected with the first side surface, and the two formed cutting surfaces are respectively positioned at two sides of the second side surface to obtain two small silicon rods with rectangular cross sections. After the scheme is adopted, the small silicon rod with a smaller size can be directly obtained, the requirements of the heterojunction battery are better met, the silicon wafer does not need to be cut by laser, the yield of the silicon wafer is improved, and the conversion efficiency of the heterojunction battery is further ensured. In addition, in the embodiment, the first cutting adopts three cutting lines for synchronous cutting, so that the cutting times can be reduced, and the production efficiency is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a flowchart of a method for vertically cutting a silicon rod in three lines according to an embodiment of the present disclosure;
fig. 2 is a flowchart of a method for vertically cutting a silicon rod in three lines according to a second embodiment of the present application;
FIG. 3 is a schematic structural view of a three-wire sag cutting silicon rod provided in the second embodiment of the present application;
FIG. 4 is a flowchart of a method for vertically cutting a silicon rod in three lines according to a third embodiment of the present application;
FIG. 5 is a schematic structural view of a three-wire sag cutting silicon rod provided in the third embodiment of the present application;
fig. 6 is a schematic structural diagram of a vertical cutting apparatus according to a fourth embodiment of the present application;
fig. 7 is a schematic structural diagram of a linear cutting device of a vertical cutting apparatus according to a fourth embodiment of the present application;
fig. 8 is a schematic structural diagram illustrating a silicon rod being cut by a single-wire cutting wheel set in the vertical cutting apparatus according to the fourth embodiment of the present application;
fig. 9 is a schematic structural view illustrating a silicon rod being cut by a double-wire cutting wheel set in the vertical cutting apparatus according to the fourth embodiment of the present application;
Fig. 10 is a schematic view illustrating a structure of a three-wire cutting wheel set for cutting silicon rods in a vertical cutting apparatus according to a fourth embodiment of the present application;
fig. 11 is a schematic structural diagram of a horizontal cutting apparatus according to a fourth embodiment of the present application;
fig. 12 is a schematic structural diagram of a linear cutting device of a horizontal cutting apparatus according to a fourth embodiment of the present application;
fig. 13 is a schematic structural diagram illustrating a silicon rod being cut by a single-wire cutting wheel set in the horizontal cutting apparatus according to the fourth embodiment of the present application;
fig. 14 is a schematic structural view illustrating a silicon rod being cut by a double-wire cutting wheel set in the horizontal cutting apparatus according to the fourth embodiment of the present application;
fig. 15 is a schematic structural view illustrating a silicon rod being cut by the three-wire cutting wheel set in the horizontal cutting apparatus according to the fourth embodiment of the present application.
Reference numerals:
1-a silicon rod; 11-a first side; 12-a second side; 2-square bar; 3-small silicon rods; 4-a silicon wafer; 51-a first cut line; 52-second cut line; 53-third cut line; 54-a fourth cut line; 55-fifth cut line; 61-a base; 62-a frame; 7-a bearing platform; 8-a wire cutting device; 81-wire wheel bracket; 82-a cutting wheel; 83-cutting line.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following further detailed description of the exemplary embodiments of the present application with reference to the accompanying drawings makes it clear that the described embodiments are only a part of the embodiments of the present application, and are not exhaustive of all embodiments. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
The embodiment provides a method for vertically cutting a silicon rod in three lines, which is used for cutting a monocrystalline silicon rod or a polycrystalline silicon rod. The cross-section of the silicon rod may be circular, elliptical or irregular. In this embodiment, a silicon rod with a circular cross section is taken as an example for explanation, the silicon rod is cylindrical, and has two circular end surfaces and a circumferential side surface located between the two end surfaces, and a central line of the silicon rod passes through centers of circles of the two end surfaces and is perpendicular to the two end surfaces. The length direction of the silicon rod is parallel to the central line of the silicon rod.
The silicon rod can be cut by cutting equipment such as a squaring machine, and cutting lines are arranged on the cutting equipment and used for cutting the silicon rod. The cutting wire may be specifically a diamond wire on which a plurality of fine-grained diamonds are provided.
Fig. 1 is a flowchart of a method for vertically cutting a silicon rod in three lines according to an embodiment of the present disclosure. As shown in fig. 1, the method for vertically cutting a silicon rod in three lines provided by the present embodiment includes:
In the cutting process, the extension direction of the cutting line for applying cutting force to the silicon rod is parallel to the end surface of the silicon rod. And cutting the silicon rod by three cutting lines along the length direction of the silicon rod to form the silicon rod with two cambered surfaces and two planes. Two first side surfaces obtained by cutting the two parallel cutting lines are parallel to the length direction of the silicon rod. The width of both first sides is smaller than the diameter of the silicon rod, i.e.: the intersecting line of two first side faces and silicon rod terminal surface is a chord of terminal surface, and two first side faces do not all pass through the central line of silicon rod.
The other cutting line is vertically intersected with the first side surface, the cutting line passes through the center line of the silicon rod, the silicon rod with two cambered surfaces and two planes is cut into two parts, and each part is provided with one cambered surface and three planes. The two portions face each other in a plane that forms a second side surface for cutting through the cutting line.
And 102, cutting the silicon rod along the length direction of the silicon rod through two cutting lines, wherein the two cutting lines are vertically intersected with the first side surface, the two formed cutting surfaces are respectively positioned on two sides of the second side surface, and two small silicon rods with rectangular cross sections are obtained.
In each cutting process, the extending direction of the cutting line is parallel to the end face. After the cutting, two small silicon rods with rectangular cross sections are formed, each small silicon rod is provided with two bottom surfaces which are respectively part of the bottom surfaces of the silicon rods, each small silicon rod is provided with four side surfaces, and each side surface is a plane.
According to the technical scheme provided by the embodiment, firstly, the silicon rod is cut once through three cutting lines along the length direction of the silicon rod, wherein two cutting lines are parallel, two parallel first side surfaces are formed through cutting of the two cutting lines, and the two first side surfaces are respectively positioned on two sides of the central line of the silicon rod; a second side surface formed by cutting through the other cutting line is vertically intersected with the first side surface, and the second side surface passes through the central line of the silicon rod; and then cutting the silicon rod along the length direction of the silicon rod through two cutting lines, wherein the two cutting lines are vertically intersected with the first side surface, and the two formed cutting surfaces are respectively positioned at two sides of the second side surface to obtain two small silicon rods with rectangular cross sections. After the scheme is adopted, the small silicon rod with a smaller size can be directly obtained, the requirements of the heterojunction battery are better met, the silicon wafer does not need to be cut by laser, the yield of the silicon wafer is improved, and the conversion efficiency of the heterojunction battery is further ensured.
By changing the positions of the two cutting lines in step 102, the ratio of the cross-sectional areas of the two small silicon rods formed after cutting is greater than or equal to 1:3, and may be 1:3, 1:2 or 1:1, for example. When the ratio of the cross-sectional areas of the two small silicon rods is 1:1, the cross-sectional areas of the two small silicon rods are equal.
Furthermore, one small silicon rod can be cut along the length direction of the silicon rod through one cutting line, and the small silicon rod is cut into two sub-silicon rods with rectangular cross sections, so that the silicon rod with a smaller cross section area is obtained to meet the requirements of heterojunction batteries with different sizes. The cross-sectional areas of the sub-silicon rods and the small silicon rods may be the same or different.
For example: when the ratio of the cross-sectional areas of the two small silicon rods is 1:2, the cross-sectional area equivalent to one small silicon rod is 2 times that of the other small silicon rod. And cutting the small silicon rod with the larger cross section area to obtain two sub silicon rods, wherein the cross section areas of the two sub silicon rods are equal and are equal to the cross section area of the small silicon rod with the smaller area.
Further, after the small silicon rods are obtained through cutting, grinding is conducted on each side face of each small silicon rod, then grinding is conducted on each edge of each small silicon rod to form a chamfer, and then the small silicon rods are cut along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers. The silicon wafer is used for manufacturing and forming a heterojunction cell.
And each side surface of the sub silicon rod can be ground, and then the sub silicon rod is cut along the direction vertical to the length direction of the silicon rod to obtain a plurality of silicon wafers. This process may be accomplished by a cutting device such as a microtome.
For the silicon rod cutting by two cutting lines in the step 102, the scheme may be to cut the silicon rod once by two cutting lines, or cut the silicon rod twice by two cutting lines, and the following specific description is provided by a plurality of embodiments:
example two
On the basis of the above embodiments, the present embodiment provides a method for vertically cutting a silicon rod in three lines, and particularly describes a scheme of performing one cutting through two cutting lines in step 102.
Fig. 2 is a flowchart of a method for vertically slicing a silicon rod in three lines according to a second embodiment of the present application, and fig. 3 is a schematic structural view of a silicon rod in vertically slicing in three lines according to a second embodiment of the present application. As shown in fig. 2 and fig. 3, the method for vertically cutting a silicon rod in three lines according to the present embodiment includes:
The three cut lines in this step are a first cut line 51, a second cut line 52, and a third cut line 53, respectively. The first cutting line 51 is parallel to the second cutting line 52, and is respectively located on two sides of the central line of the silicon rod. The first cut lines 51 and the second cut lines 52 provide two first sides 11, and the two first sides 11 are parallel (only the upper first side 11 is shown in fig. 3). After three linear cutting, four small pieces of side leather are also obtained.
The third cutting line 53 perpendicularly intersects both first sides 11, the third cutting line 53 passing through the center line of the silicon rod. The silicon rod 1 is cut into two parts each having an arc surface and three flat surfaces through the third cutting line 53. The two opposite sides are second sides (not shown in the figure) which are perpendicular to the two first sides 11.
202, cutting the silicon rod once along the length direction of the silicon rod through two cutting lines, wherein the two cutting lines are vertically intersected with the first side surface, and the two formed cutting surfaces are respectively positioned on two sides of the second side surface to obtain two small silicon rods with rectangular cross sections.
The two cut lines in this step are a fourth cut line 54 and a fifth cut line 55, respectively, and both the fourth cut line 54 and the fifth cut line 55 perpendicularly intersect the first side 11. The fourth cut line 54 and the fifth cut line 55 are respectively located at both sides of the second side surface.
The third side 13 is obtained by cutting with the fourth cutting line 54, and a large-sized offcut is also obtained, which has a plane and a cambered surface.
The fourth side (not shown) is cut by the fifth cut line 55, and a large-sized offcut is obtained, which has a flat surface and a curved surface.
Through the steps, two small silicon rods 3 with rectangular cross sections are obtained. When the fourth cutting line 54 and the fifth cutting line 55 are symmetrically disposed at both sides of the second side surface, the cross-sectional areas of the two small silicon rods 3 are equal.
One implementation is as follows: the fourth cutting line 54 and the fifth cutting line 55 are arranged symmetrically with respect to the silicon rod center line. So that the shapes and sizes of the edge leather materials cut by the fourth cutting line 54 and the fifth cutting line 55 are the same, two edge leather materials can be taken out by using the same type of edge leather clamping jaws. And follow-up opposite side cladding is retrieved and is cut once more, and two pieces of border cladding accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency.
One implementation is as follows: the fourth cutting line 54 and the fifth cutting line 55 are arranged symmetrically with respect to the silicon rod center line, resulting in two small silicon rods 3 of the same size.
After obtaining the small silicon rods 3, the following steps may also be performed:
and step 203, grinding each side surface of the small silicon rod.
And 204, grinding four edges of the small silicon rod along the length direction to form a chamfer.
And step 205, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.
On the basis of the above scheme, one of the small silicon rods may be cut before step 203, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers. For example: in step 202, the positions of the fourth cutting line 54 and the fifth cutting line 55 are adjusted to obtain two small silicon rods 3 with different cross-sectional areas. And cutting one of the small silicon rods 3 along the length direction of the silicon rod through a sixth cutting line to obtain two sub silicon rods with rectangular cross sections. And then, slicing the sub silicon rod to obtain a sub silicon wafer.
One implementation is as follows: the cross-sectional area ratio of the small silicon rod 3 to the two sub-silicon rods is 1: 1: 1. the obtained small silicon chip 4 and the sub silicon chip have the same size, and large-scale production is facilitated. Of course, the position of each cutting line can be adjusted according to the size of the silicon chip to meet the requirements of various sizes of the silicon chips.
In addition, in the embodiment, the three cutting lines are used for synchronous cutting in the first cutting, the two cutting lines are used for the second cutting, and two small silicon rods with rectangular cross sections can be obtained only by two-step cutting, so that the cutting times can be reduced, the production efficiency is improved, the electrical control logic is simplified, and the equipment stability is improved.
EXAMPLE III
The present embodiment provides a method for vertically cutting a silicon rod in three lines based on the above embodiments, and particularly provides a manner that the cutting is performed by two times, each time through one cutting line, in step 102.
Fig. 4 is a flowchart of a method for vertically slicing a silicon rod in three lines according to a third embodiment of the present disclosure, and fig. 5 is a schematic structural view of a silicon rod in three lines according to a third embodiment of the present disclosure. As shown in fig. 4 and 5, the method for vertically cutting a silicon rod in three lines according to the present embodiment includes:
301, cutting the silicon rod once along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are parallel, two parallel first side surfaces are formed by cutting through the two cutting lines, and the two first side surfaces are respectively positioned on two sides of the central line of the silicon rod; the second side surface formed by cutting through the other cutting line is vertically intersected with the first side surface, and the second side surface passes through the central line of the silicon rod.
The three cut lines in this step are a first cut line 51, a second cut line 52, and a third cut line 53, respectively. The first cutting line 51 is parallel to the second cutting line 52, and is respectively located on two sides of the central line of the silicon rod. The first cut lines 51 and the second cut lines 52 provide two first sides 11, and the two first sides 11 are parallel (only the upper first side 11 is shown in fig. 3). After three linear cutting, four small pieces of side leather are also obtained.
The third cutting line 53 perpendicularly intersects both first side surfaces 11, the third cutting line 53 passing through the center line of the silicon rod. The silicon rod 1 is cut into two parts by the third cutting line 53, each part having an arc surface and three flat surfaces. The two opposite sides are second sides (not shown) which are perpendicular to the two first sides 11.
And 302, cutting the silicon rod once along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface, and the formed cutting surface is positioned on one side of the second side surface.
The cut line in this step is a fourth cut line 54, and the fourth cut line 54 perpendicularly intersects the first side face 11. In fig. 5, the fourth cutting line 54 is located on the left side of the second side surface, and cuts the silicon rod on the left side portion obtained in step 301, so as to obtain a small silicon rod 3 and an edge skin material after cutting. The left side surface of the small silicon rod 3 is a third side surface 13.
And step 303, cutting the silicon rod for one time along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface, and the formed cutting surface is positioned on the other side of the second side surface, so that two small silicon rods with rectangular cross sections are obtained.
The cut line in this step is a fifth cut line 55, and the fifth cut line 55 perpendicularly intersects the first side face 11. In fig. 5, the fifth cutting line 55 is located at the right side of the second side surface, and cuts the silicon rod at the right side portion obtained in step 301, and another small silicon rod 3 and a piece of edge skin material are obtained after cutting.
Through the steps, two small silicon rods 3 with rectangular cross sections are obtained. When the fourth cutting line 54 and the fifth cutting line 55 are symmetrically disposed at both sides of the second side surface, the cross-sectional areas of the two small silicon rods 3 are equal.
One implementation is: the fourth cutting line 54 and the fifth cutting line 55 are symmetrically arranged with respect to the center line of the silicon rod. So that the shapes and sizes of the edge leather materials cut by the fourth cutting line 54 and the fifth cutting line 55 are the same, two edge leather materials can be taken out by using the same type of edge leather clamping jaws. And follow-up opposite side cladding is retrieved and is cut once more, and two pieces of border cladding accessible cutting equipment of same specification cut, need not to change cutting equipment or adjust specific cutting position to improve cutting efficiency.
One implementation is: the fourth cutting line 54 and the fifth cutting line 55 are arranged symmetrically with respect to the silicon rod center line, resulting in two small silicon rods 3 of the same size.
After obtaining the small silicon rods 3, the following steps may also be performed:
and 304, grinding each side surface of the small silicon rod.
And 305, grinding four edges of the small silicon rod along the length direction to form a chamfer.
And step 306, cutting the small silicon rods along the length direction perpendicular to the silicon rods to obtain a plurality of silicon wafers.
On the basis of the above scheme, one of the small silicon rods may be cut before step 304, the small silicon rod is cut into two sub-silicon rods with rectangular cross-sectional areas, and then the sub-silicon rods are also ground and sliced to obtain sub-silicon wafers. For example: the positions of the fourth cutting line 54 and the fifth cutting line 55 are adjusted to obtain two small silicon rods 3 with different cross-sectional areas. And cutting one of the small silicon rods 3 along the length direction of the silicon rod through a sixth cutting line to obtain two sub silicon rods with rectangular cross sections. And then, slicing the sub silicon rod to obtain a sub silicon wafer.
One implementation is as follows: the cross-sectional area ratio of the small silicon rod 3 to the two sub-silicon rods is 1: 1: 1. the obtained small silicon chip 4 and the sub silicon chip have the same size, and large-scale production is facilitated. Of course, the position of each cutting line can be adjusted according to the size of the silicon chip to meet the requirements of various sizes of the silicon chips.
In addition, in the embodiment, the first cutting adopts three cutting lines for synchronous cutting, so that the cutting times can be reduced, the production efficiency is improved, the electrical control logic is simplified, and the equipment stability is improved. The silicon rod cutting machine has the advantages that the silicon rod cutting machine is high in flexibility by performing single-line cutting twice subsequently, can adapt to silicon rods with different specifications, and can adjust the cutting sequence in time along with production arrangement. And the single-wire cutting mode also makes the wiring mode of the cutting wire on the cutting equipment simpler, reduces the structural complexity and control complexity of the cutting equipment, has lower part damage rate and further reduces the maintenance cost.
Example four
On the basis of the above embodiments, the present embodiment further provides a cutting apparatus, which can be used for executing the method provided in any of the above. The cutting apparatus provided by the present embodiment may include: base, plummer and wire cutting device. Wherein, plummer and wire cutting device all set up on the base. The bearing platform is used for bearing the silicon rod, and the wire cutting device and the bearing platform can move relatively along the length direction of the silicon rod.
The wire cutting device comprises a wire wheel support and a single wire cutting wheel set, a double wire cutting wheel set and/or a three wire cutting wheel set arranged on the wire wheel support. The single-wire cutting wheel set is wound with a cutting line and is used for cutting the silicon rod through the cutting line. The double-wire cutting wheel set is wound with at least two cutting wires which are parallel to each other and used for cutting the silicon rod through the two cutting wires. The three-wire cutting wheel set is wound with three cutting lines, wherein two cutting lines are parallel, and the other cutting line is vertical to the other cutting lines, so that the silicon rod is cut through the three cutting lines.
Further, the cutting apparatus further comprises: and the rotating mechanism is arranged on the base and used for driving the bearing platform to rotate around the central line of the silicon rod.
Further, the cutting apparatus further comprises: and the translation mechanism is arranged on the base and is used for driving the wire cutting device or the bearing table to move in a plane vertical to the length direction of the silicon rod.
According to the arrangement direction of the silicon rods, the cutting equipment can be divided into a vertical type cutting equipment and a horizontal type cutting equipment, wherein in the vertical type cutting equipment, the central line of the silicon rods is vertically placed on the bearing table, the linear cutting device or the bearing table vertically moves, and the silicon rods are cut through the cutting lines. The translation mechanism is used for driving the wire cutting device to move horizontally.
In the horizontal cutting apparatus, the center line of the silicon rod is arranged on the carrying table in the horizontal direction, and the linear cutting device or the carrying table moves in the horizontal direction to cut the silicon rod through the cutting line. The translation mechanism is used for driving the wire cutting device to move horizontally and/or vertically.
Fig. 6 is a schematic structural view of a vertical cutting device according to a fourth embodiment of the present application, fig. 7 is a schematic structural view of a linear cutting device of the vertical cutting device according to the fourth embodiment of the present application, fig. 8 is a schematic structural view of a single-wire cutting wheel set cutting a silicon rod in the vertical cutting device according to the fourth embodiment of the present application, fig. 9 is a schematic structural view of a double-wire cutting wheel set cutting a silicon rod in the vertical cutting device according to the fourth embodiment of the present application, and fig. 10 is a schematic structural view of a three-wire cutting wheel set cutting a silicon rod in the vertical cutting device according to the fourth embodiment of the present application.
As shown in fig. 6 to 10, the cutting apparatus provided in the present embodiment includes: a base, a bearing table 7 and a wire cutting device 8.
Wherein, the base includes base 61 and frame 62, and base 61 is a foundation structure, and frame 62 is a platelike structure, along vertical being fixed in on the base 61. Plummer 7 and wire cutting device 8 set up on frame 62, and plummer 7 is fixed along vertical setting between two footsteps including two footsteps from top to bottom, silicon rod 1. One solution is as follows: the top seat is provided with a rotating mechanism for driving the silicon rod 1 to rotate along the central line.
The frame 62 is provided with a guide rail, and the bearing table 7 can move up and down relative to the frame 62 by matching with the guide rail. Alternatively, the wire cutting device 8 is moved up and down relative to the frame 62 in cooperation with the guide rail. So that the wire cutting device 8 can be moved in the longitudinal direction of the silicon rod relative to the silicon rod 1 for cutting the silicon rod 1.
The wire cutting device 8 comprises a wire wheel support 81 and a single wire cutting wheel set arranged on the wire wheel support 81, and a cutting wire 83 is wound on the single wire cutting wheel set. The cutting is performed by one cutting line 83 in one cutting step. The reel support 81 is of a substantially square frame structure, a group of single-wire cutting wheel sets is arranged in the inner space of the reel support, each single-wire cutting wheel set comprises at least two cutting wheels 82, and the cutting lines 83 are wound on the cutting wheels 82.
Alternatively, the reel bracket 81 may be provided with a double-wire cutting wheel set, which includes two sets of cutting wheels 82, each set including at least two cutting wheels 82, one cutting line 83 wound on one set of cutting wheels 82, and the cutting lines 83 on the two sets of cutting wheels 82 being parallel. The cutting is performed in one cutting step by one cutting line 83 or two parallel cutting lines 83.
Or, a three-wire cutting wheel group can be arranged on the wire wheel support 81, and comprises three groups of cutting wheels 82, each group comprises at least two cutting wheels 82, one cutting line 83 is wound on one group of cutting wheels 82, the cutting lines 83 on the two groups of cutting wheels 82 are parallel, and the cutting lines 83 on the other group of cutting wheels 82 are perpendicular to the other two cutting lines 83. In the one-time cutting step, cutting is performed through three cutting lines 83, or cutting is performed through two parallel cutting lines 83, or cutting is performed through one cutting line 83, specifically, the line cutting device or the bearing table can be driven to move through the translation mechanism, and single-line cutting, double-line cutting and three-line cutting are achieved through one line wheel support 81.
The cutting wheel 82 is adjustable in position on the wire wheel support 81, and is provided with a guide mechanism and a driving mechanism for driving the cutting wheel 82 to move.
The other implementation mode comprises the following steps: the wire cutting device 8 can be provided with three wire wheel supports, one of which is provided with a single wire cutting wheel set, the other is provided with a double wire cutting wheel set, and one is provided with a three wire cutting wheel set. The three wire wheel supports are arranged side by side, and the corresponding wire wheel supports and the silicon rod can be controlled to move relatively to cut according to a specific cutting sequence.
Taking the scheme of the second embodiment as an example, the silicon rod 1 is cut by the first cutting line 51, the second cutting line 52 and the third cutting line 53 through the three-line cutting wheel set. The cut is then made with a fourth cut line 54 and a fifth cut line 55 by means of a double line cutting wheel set.
Taking the third embodiment as an example, the silicon rod 1 is cut by the first cutting line 51, the second cutting line 52 and the third cutting line 53 through the three-line cutting wheel set. Then, the cutting is performed by the fourth cutting line 54 through the single-wire cutting wheel set, and then the cutting is performed by the fifth cutting line 55 by adjusting the position of the cutting wheel 82 in the single-wire cutting wheel set or rotating the silicon rod.
Fig. 11 is a schematic structural view of a horizontal cutting device according to a fourth embodiment of the present application, fig. 12 is a schematic structural view of a linear cutting device according to the fourth embodiment of the present application, fig. 13 is a schematic structural view of a single linear cutting wheel set cutting a silicon rod in the horizontal cutting device according to the fourth embodiment of the present application, fig. 14 is a schematic structural view of a double linear cutting wheel set cutting the silicon rod in the horizontal cutting device according to the fourth embodiment of the present application, and fig. 15 is a schematic structural view of a three linear cutting wheel set cutting the silicon rod in the horizontal cutting device according to the fourth embodiment of the present application.
As shown in fig. 11 to 15, the cutting apparatus provided in the present embodiment includes: a base, a bearing table 7 and a wire cutting device 8.
Wherein, the base includes base 61 and frame 62, and base 61 is a foundation structure, and frame 62 has a roof and a plurality of stand, and the stand is fixed in on base 61 along vertical, and the roof is connected in the top of each stand. The plummer 7 sets up on frame 62, and the plummer 7 includes two footstock, and silicon rod 1 is fixed along the level setting between two footstock. One solution is as follows: the top seat is provided with a rotating mechanism for driving the silicon rod 1 to rotate along the central line.
One implementation is as follows: the frame 62 is provided with a guide rail, and the bearing platform 7 is matched with the guide rail and can horizontally move relative to the frame 62. In another mode: the base 61 is provided with a guide rail, and the wire cutting device 8 moves horizontally relative to the frame 62 in cooperation with the guide rail. So that the wire cutting device 8 can be moved in the longitudinal direction of the silicon rod relative to the silicon rod 1 for cutting the silicon rod 1.
The wire cutting device 8 comprises a wire wheel support 81 and a single wire cutting wheel set arranged on the wire wheel support 81, and a cutting wire 83 is wound on the single wire cutting wheel set. The cutting is performed by one cutting line 83 in one cutting step. The wire wheel support 81 comprises two oppositely-arranged 'n' -shaped frames, a group of single-wire cutting wheel sets are arranged in the inner space of the wire wheel support, each single-wire cutting wheel set comprises at least two cutting wheels 82, and cutting wires 83 are wound on the cutting wheels 82.
Alternatively, the reel bracket 81 may be provided with a double-wire cutting wheel set, which includes two sets of cutting wheels 82, each set including at least two cutting wheels 82, one cutting line 83 wound on one set of cutting wheels 82, and the cutting lines 83 on the two sets of cutting wheels 82 being parallel. The cutting is performed in one cutting step by one cutting line 83 or two parallel cutting lines 83.
Or, a three-wire cutting wheel group can be arranged on the wire wheel support 81, and comprises three groups of cutting wheels 82, each group comprises at least two cutting wheels 82, one cutting line 83 is wound on one group of cutting wheels 82, the cutting lines 83 on the two groups of cutting wheels 82 are parallel, and the cutting lines 83 on the other group of cutting wheels 82 are perpendicular to the other two cutting lines 83. In the one-time cutting step, the cutting is performed through three cutting lines 83, or the cutting is performed through two parallel cutting lines 83, or the cutting is performed through one cutting line 83, specifically, the cutting device or the bearing table can be driven by the translation mechanism to move, and the single-line cutting, the double-line cutting and the three-line cutting are realized through one wire wheel support 81.
The cutting wheel 82 is adjustable in position on the wire wheel support 81, and is provided with a guide mechanism and a driving mechanism for driving the cutting wheel 82 to move.
The other realization mode is as follows: the wire cutting device 8 can be provided with three wire wheel supports, one of which is provided with a single wire cutting wheel set, the other is provided with a double wire cutting wheel set, and one is provided with a three wire cutting wheel set. The three wire wheel supports are arranged side by side, and the corresponding wire wheel supports and the silicon rod can be controlled to move relatively to cut according to a specific cutting sequence.
The middle-first cutting provided by the embodiment adopts the synchronous cutting of the three cutting lines, so that the cutting times can be reduced, the production efficiency is improved, the electrical control logic is simplified, and the equipment stability is improved. Follow-up through coordinating single line cutting, have higher flexibility, the silicon rod of adaptable different specifications also can in time adjust the cutting order along with the production arrangement. And the single-wire cutting mode also makes the wiring mode of the cutting wire on the cutting equipment simpler, reduces the structural complexity and control complexity of the cutting equipment, has lower part damage rate and further reduces the maintenance cost.
In addition, the present embodiment also provides a cutting system for vertically cutting a silicon rod in three lines, including: any one of the above cutting apparatuses and a grinding apparatus for grinding a silicon rod. The cutting equipment and the cutting system provided by the embodiment have the same technical effects as the cutting method.
In the description of the present application, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be considered as limiting the present application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; may be mechanically, electrically or otherwise in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
While the preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including the preferred embodiment and all changes and modifications that fall within the scope of the present application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (11)
1. A method for vertically cutting a silicon rod in three lines is characterized by comprising the following steps:
the silicon rod is cut once along the length direction of the silicon rod through three cutting lines, wherein two cutting lines are parallel, two parallel first side surfaces are formed through cutting of the two cutting lines, and the two first side surfaces are respectively positioned on two sides of the central line of the silicon rod; a second side surface formed by cutting through the other cutting line is vertically intersected with the first side surface, and the second side surface passes through the central line of the silicon rod;
and cutting the silicon rod through two cutting lines along the length direction of the silicon rod, wherein the two cutting lines are vertically intersected with the first side surface, and the two formed cutting surfaces are respectively positioned at two sides of the second side surface to obtain two small silicon rods with rectangular cross sections.
2. The method according to claim 1, characterized in that the silicon rod is cut along its length by two cutting lines, in particular:
the silicon rod is cut once along the length direction thereof by two cutting lines.
3. The method according to claim 1, characterized in that the silicon rod is cut along its length by two cutting lines, in particular:
the silicon rod is cut twice along the length direction thereof by two cutting lines, each cutting line cutting the silicon rod by one cutting line.
4. The method of claim 3 wherein the cutting of the silicon rod twice along its length by two cutting lines comprises:
firstly, cutting the silicon rod for one time along the length direction of the silicon rod through a cutting line, wherein the cutting line is vertically intersected with the first side surface, and the formed cutting surface is positioned on one side of the second side surface;
and secondly, cutting the silicon rod for one time through a cutting line along the length direction of the silicon rod, wherein the cutting line is vertically intersected with the first side surface, and the formed cutting surface is positioned on the other side of the second side surface to obtain two small silicon rods with rectangular cross sections.
5. The method of any of claims 1-4, further comprising:
grinding each side surface of the small silicon rod;
grinding each edge of the small silicon rod to form a chamfer;
and cutting the small silicon rods along the direction vertical to the length direction of the silicon rods to obtain a plurality of silicon wafers.
6. The method according to any one of claims 1 to 4, characterized in that the ratio of the cross-sectional areas of the two small silicon rods is greater than or equal to 1: 3.
7. A cutting apparatus using the method for vertically cutting a silicon rod in three lines according to any one of claims 1 to 6, comprising:
a base;
the bearing table is arranged on the base and used for bearing a silicon rod;
the linear cutting device is arranged on the base and can move relative to the bearing table along the length direction of the silicon rod; the wire cutting device comprises a wire wheel support, and a single wire cutting wheel set, a double wire cutting wheel set and/or a three wire cutting wheel set which are arranged on the wire wheel support, wherein a cutting wire is wound on the single wire cutting wheel set and is used for cutting the silicon rod through the cutting wire; the double-wire cutting wheel set is wound with two cutting wires which are parallel to each other and used for cutting the silicon rod through the two cutting wires; the three-wire cutting wheel set is wound with three cutting lines, wherein two cutting lines are parallel and vertical to the other cutting line.
8. The cutting apparatus of claim 7, further comprising:
the rotating mechanism is arranged on the base and used for driving the bearing table to rotate around the central line of the silicon rod; and/or the presence of a gas in the atmosphere,
and the translation mechanism is arranged on the base and is used for driving the wire cutting device to move in a plane vertical to the length direction of the silicon rod.
9. The cutting apparatus according to claim 8, characterized in that the silicon rod is arranged vertically on the carrier table; the linear cutting device moves vertically to cut the silicon rod through the cutting line; the translation mechanism is used for driving the wire cutting device to move horizontally.
10. The cutting apparatus according to claim 8, characterized in that the silicon rod is arranged in a horizontal direction on the carrier table; the linear cutting device moves along the horizontal direction to cut the silicon rod through the cutting line; the translation mechanism is used for driving the wire cutting device to move horizontally and/or vertically.
11. A cutting system for vertically cutting a silicon rod in three lines, comprising:
the cutting apparatus of any one of claims 7-10; and (c) a second step of,
and the grinding equipment is used for grinding the silicon rod.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210421555.8A CN114750317A (en) | 2022-04-21 | 2022-04-21 | Method for vertically cutting silicon rod in three lines, cutting equipment and cutting system |
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| CN202210421555.8A CN114750317A (en) | 2022-04-21 | 2022-04-21 | Method for vertically cutting silicon rod in three lines, cutting equipment and cutting system |
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