CN114744398B - High-power capacity broadband microstrip patch antenna and power testing method thereof - Google Patents

High-power capacity broadband microstrip patch antenna and power testing method thereof Download PDF

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Publication number
CN114744398B
CN114744398B CN202210495986.9A CN202210495986A CN114744398B CN 114744398 B CN114744398 B CN 114744398B CN 202210495986 A CN202210495986 A CN 202210495986A CN 114744398 B CN114744398 B CN 114744398B
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patch
power
antenna
wave
power capacity
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CN114744398A (en
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谢少毅
张蕾
李佳伟
郭乐田
邓广健
方文饶
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Northwest Institute of Nuclear Technology
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Northwest Institute of Nuclear Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/06—Arrangements for measuring electric power or power factor by measuring current and voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention provides a high-power capacity broadband microstrip patch antenna and a power testing method thereof, which are used for solving the technical problems that the traditional microstrip antenna is low in power capacity and not suitable for a high-power microwave radiation system of a semiconductor device. The microstrip patch antenna comprises a bottom plate, a supporting structure, a coaxial connector and a radiation structure. The radiation structure comprises a capacitive patch, a dielectric plate, a coupling feed structure and a radiation patch; the microstrip line of the coupling feed structure is connected with the radiation patch; the inner conductor of the coaxial connector is welded with a bonding pad of the coupling feed structure; the capacitive patch is communicated with the coupling feed structure; the four corners of the radiation patch are arranged in an arc shape; the edge of the capacitive patch is provided with a solder mask, and the size of the capacitive patch is set to be 0.062 x lambda 0 Ply (0.5-k); a gap is arranged between the lower end face of the capacitive patch and the upper end face of the outer conductor. According to the power testing method provided by the invention, the power of the antenna to be tested is calculated through the voltage of the incident wave video signal of the oscilloscope when the reflected waveform is deformed.

Description

High-power capacity broadband microstrip patch antenna and power testing method thereof
Technical Field
The invention relates to the technical field of high-power microwaves and antennas, in particular to a high-power capacity broadband microstrip patch antenna and a power testing method thereof.
Background
High power microwave technology has evolved faster over the last decades and its power source generation has also evolved from electrical vacuum to semiconductor devices. At present, an antenna part matched with an electric vacuum high-power microwave generator generates a great deal of research results, and the antenna part comprises a large-caliber reflecting surface antenna with a single antenna, such as a biased feed Cassegrain antenna, a beam waveguide antenna and the like, a COBRA antenna, a horn antenna and a Vlasov antenna; there are also array antennas that can realize the beam scanning function, such as waveguide slot array antennas, leaky waveguide array antennas, radial line helical array antennas, radial line slot array antennas, and the like. In recent years, the technology of using a semiconductor device as a high-power microwave generating device is primarily developed, and an antenna matched with the technology cannot be directly referred to from a conventional electric vacuum high-power microwave radiation system.
In the present stage, the excellent power capacity and efficiency characteristics of the horn antenna are common in practical application of a semiconductor as a high-power microwave generating device, but the weight and the size of the horn antenna are large, so that the applicability is greatly limited. The microstrip antenna is used as the unit main force in the conventional array antenna, and is the first choice of the radiating unit of the semiconductor device high-power microwave generator, but the conventional microstrip antenna has lower power capacity at present and is not suitable for a semiconductor device high-power microwave radiating system.
Disclosure of Invention
The invention aims to solve the technical problems that the traditional microstrip antenna is low in power capacity and is not suitable for a high-power microwave radiation system of a semiconductor device, and provides a high-power capacity broadband microstrip patch antenna and a power testing method thereof.
In order to solve the technical problems, the technical solution provided by the invention is as follows:
the high-power capacity broadband microstrip patch antenna comprises a bottom plate, a supporting structure arranged on the bottom plate, a coaxial connector arranged in the supporting structure and arranged on the bottom plate, and a radiation structure arranged at the upper end of the supporting structure, and is characterized in that the bottom plate is a metal plate;
the coaxial connector comprises an outer conductor, a medium and an inner conductor which are coaxially arranged in sequence from outside to inside; the inner conductor is higher than the upper end surfaces of the outer conductor and the medium;
the radiation structure comprises a capacitive patch, a dielectric plate, a coupling feed structure and a radiation patch which are sequentially arranged from bottom to top;
the capacitive patch, the dielectric plate and the inner conductor are respectively provided with a first through hole and a second through hole at the corresponding positions; a third through hole is formed in the radiation patch at a position corresponding to the coupling feed structure;
the coupling feed structure comprises a microstrip line and a bonding pad outside the microstrip line;
the microstrip line of the coupling feed structure is connected with the radiation patch;
the upper end of the inner conductor sequentially passes through the first through hole of the capacitive patch and the second through hole of the dielectric plate to be welded with the bonding pad of the coupling feed structure;
the capacitive patch is communicated with the coupling feed structure through a second through hole on the dielectric plate;
four corners of the radiation patch are arranged in an arc shape;
the edge of the capacitive patch is provided with a solder mask, and the size of the capacitive patch is set to be 0.062 lambda 0 Ply (0.5-k), where lambda 0 Ply is the length of the radiation patch, and k is a dimensionless coefficient;
a gap is arranged between the lower end face of the capacitive patch and the upper end face of the outer conductor.
Further, the height of the support structure is set to 0.1 x lambda 0 ±10％。
Further, the mounting position coordinates of the coaxial connector on the bottom plate are (0, ±k+ply), and the mounting position coordinates take the center point of the bottom plate as the origin.
Further, the bottom plate is provided with a mounting groove, and the supporting structure is mounted in the mounting groove.
Further, the support structure is internally provided with a hollow structure, and the plane size of the hollow structure is larger than or equal to the plane size of the radiation patch and smaller than the plane size of the dielectric plate.
Further, the support structure is disposed in the center of the base plate.
The invention also provides a power testing method of the high-power capacity broadband microstrip patch antenna, which is characterized by comprising the following steps:
1) Building test platform
The testing platform comprises a microwave source, an incident wave fixed coupler, a reflected wave fixed coupler, a wave-to-wave converter, a camera bellows and a testing unit, wherein the incident wave fixed coupler, the reflected wave fixed coupler and the wave-to-wave converter are sequentially connected along the microwave transmission direction; the test unit comprises a first attenuator group, a first detector, a second attenuator group, a second detector, an oscilloscope, a first cable and a first connector;
the output of the microwave source is connected with an incident wave constant coupler, the output of a coupling end of the incident wave constant coupler is connected with a first attenuator group, the output of the first attenuator group is connected with a first detector, and the first detector outputs an incident wave video signal to a first port of an oscilloscope; the output of the coupling end of the reflected wave constant coupling is connected with a second attenuator group, the output of the second attenuator group is connected with a second detector, and the second detector outputs a reflected wave video signal to a second port of the oscilloscope; the output of the wave-to-wave converter is connected with a first connector on the camera bellows through a first cable;
2) Connecting antenna to be tested and test platform
Placing an antenna to be tested on a wooden platform in a camera bellows; the input end of the antenna to be tested is connected with the output end of the first connector through the second connector and the second cable in sequence;
3) Performing antenna power testing
Along with the power improvement of the microwave source, when the reflected waveform is deformed, the power P1 of the antenna to be measured at the moment is calculated according to the video signal voltage V of the incident wave at the moment of the oscilloscope, and the power capacity of the antenna to be measured is obtained.
Further, in step 3), the power P1 of the antenna to be measured at this time is calculated according to the voltage V of the incident wave video signal at this time of the oscilloscope, specifically: converting the voltage V of the incident wave video signal observed by the oscilloscope into a corresponding power value P through the calibration value of the first detector;
the power p1=converted power value p+incident wave fixed coupling degree+attenuation value of the first attenuator group-incident wave fixed coupling insertion loss-reflected wave fixed coupling insertion loss-wave same-converter insertion loss-first cable insertion loss-second cable insertion loss-first connector insertion loss-second connector insertion loss of the antenna to be tested at the moment.
Further, in step 1), the wave-to-phase converter uses a BJ100 to N-type wave-to-phase converter.
Further, in step 1), the first cable is an N-type low-insertion-loss cable;
in the step 2), the second cable is an N-type low-insertion-loss cable.
Compared with the prior art, the invention has the beneficial effects that:
1. the high-power capacity broadband microstrip patch antenna provided by the invention has the advantages that the overall structural design realizes the power output of 20kW of a single antenna and 40kW of a single wavelength caliber, and the power density per unit area is high; the bandwidth can be kept above 20%, and the method is applicable to various frequency band application ranges; the core bandwidth with the relative bandwidth of more than 15 percent can keep the return loss of more than-15 dB and the high-efficiency radiation of the broadband; the section of the patch antenna is only below 0.15 lambda, and compared with the section of the horn antenna about 2 lambda, the patch antenna greatly widens the mounting platform of the antenna.
2. The invention provides a high-power capacity broadband microstrip patch antenna, which is characterized in that four corners of a radiation patch are arranged in an arc shape; a solder mask layer is arranged at the edge of the capacitive patch; the size of the capacitive patch is set to 0.062 x 0 Ply (0.5-k); a gap is arranged between the lower end face of the capacitive patch and the upper end face of the outer conductor; the processing of the four aspects improves the power capacity of the radiation structure, thereby improving the power capacity of the whole antenna.
3. According to the high-power capacity broadband microstrip patch antenna provided by the invention, the broadband characteristic of the antenna is improved through the clearance between the lower end face of the capacitive patch and the upper end face of the outer conductor and the size of the capacitive patch which are reasonably designed, so that the designed antenna has good electrical performance.
4. The invention provides a high-power capacity broadband microstrip patch antenna, wherein the height of a supporting structure is set to be 0.1 x lambda 0 The broadband characteristic of the antenna is further improved by +/-10%, and the relative bandwidth is close to 20%.
5. The high-power capacity broadband microstrip patch antenna provided by the invention has the advantages that the supporting structure is arranged in the mounting groove of the bottom plate and is used for ensuring the stability of an antenna system.
6. According to the high-power capacity broadband microstrip patch antenna provided by the invention, the support structure is internally provided with the hollow structure, and the plane dimension of the hollow structure is larger than or equal to the plane dimension of the radiation patch and smaller than the plane dimension of the dielectric plate, so that the weight can be reduced on the basis of ensuring the support strength and the antenna effect.
7. According to the testing method of the high-power capacity broadband microstrip patch antenna, the antenna to be tested is placed into the special camera bellows, radiation power damage to the oscilloscope is avoided, the testing method is simple, loss is low, and power testing accuracy of the antenna is guaranteed.
8. According to the testing method of the high-power capacity broadband microstrip patch antenna, the BJ 100-to-N type wave-to-wave converter is adopted by the wave-to-wave converter, so that the power capacity of the measuring system is higher than that of the antenna to be tested, and the measuring system is prevented from being broken down before the antenna to be tested in the testing process.
9. According to the testing method of the high-power capacity broadband microstrip patch antenna, the first cable and the second cable are both N-type low-insertion-loss cables, so that the power loss of a measuring system is further reduced.
Drawings
FIG. 1 is a schematic diagram of a high power capacity wideband microstrip patch antenna according to an embodiment of the present invention;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a schematic view of a bottom plate according to an embodiment of the present invention;
FIG. 4 is a schematic view of a support structure according to an embodiment of the present invention;
FIG. 5 is a top view of FIG. 4;
fig. 6 is a schematic structural view of a coaxial connector according to an embodiment of the present invention;
FIG. 7 is a schematic view of a structure without showing a supporting structure according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a radiation structure according to an embodiment of the present invention;
FIG. 9 is a bottom view of FIG. 8;
FIG. 10 is a top view of FIG. 8;
FIG. 11 is a corresponding field distribution for a gap of 0.1mm between the lower end surface of the capacitive patch and the upper end surface of the outer conductor in an embodiment of the present invention;
FIG. 12 is a corresponding field distribution for a 1mm gap between the lower end surface of the capacitive patch and the upper end surface of the outer conductor in an embodiment of the present invention;
FIG. 13 is a graph showing the relationship between the gap between the lower end surface of the capacitive patch and the upper end surface of the outer conductor and the maximum field strength in the embodiment of the present invention;
FIG. 14 is a schematic diagram showing a top field distribution of a radiation structure according to an embodiment of the present invention;
FIG. 15 is a second schematic diagram of a top field distribution of a radiation structure according to an embodiment of the present invention;
FIG. 16 is a schematic diagram of the bottom field distribution of a radiating structure in an embodiment of the present invention;
FIG. 17 is a graph of standing waves of an antenna according to an embodiment of the present invention;
fig. 18 is a graph of antenna gain according to an embodiment of the present invention;
FIG. 19 is a schematic view of a capacitive patch-applied solder mask layer according to an embodiment of the present invention;
FIG. 20 is a schematic diagram of a power test experimental platform according to the present invention.
The specific reference numerals are as follows:
1-a bottom plate; 2-a support structure;
3-coaxial connector, 31-outer conductor, 32-medium, 33-inner conductor;
4-radiating structures, 41-capacitive patches, 42-dielectric plates, 43-coupling feed structures, 44-radiating patches, 45-solder masks;
5-a microwave source; 6-incident waveguiding; 7-a first attenuator group; 8-a first detector; 9-oscilloscopes; 10-reflected wave constant coupling; 11-a second attenuator group; 12-a second detector; 13-a wave-to-common converter; 14-a first cable; 15-a first connector; 16-a camera bellows; 17-a second cable; 18-a second connector.
Detailed Description
To make the advantages and features of the present invention more apparent, the present invention will be further described in detail with reference to specific embodiments in which the operating frequency is set in the X-band and the measured power capacity reaches 20kW at a 1us pulse width microwave injection, and the embodiments are described in detail with reference to the accompanying drawings.
As shown in fig. 1 and 2, a high-power capacity broadband microstrip patch antenna comprises a base plate 1, a supporting structure 2 mounted on the base plate 1, a coaxial connector 3 sleeved in the supporting structure 2 and mounted on the base plate 1, and a radiation structure 4 mounted on the upper end of the supporting structure 2.
The material of the base plate 1 is selected from a metal plate with a certain thickness, and the thickness is adjusted according to the plane dimension of the base plate 1 in order to ensure the flatness and strength of the base plate 1. As shown in fig. 3, in this embodiment, aluminum is used as the base plate 1, and the critical dimension parameter is gx=29.5 mm long, gy=17 mm wide, and the height is set to 2mm. The bottom plate 1 is provided with a mounting groove, and a mounting hole is formed in the mounting groove; the mounting groove is used for positioning the supporting structure 2, the supporting structure 2 is fixedly adhered in the mounting groove, the size of the mounting groove is bx=12.5 mm, by=17 mm, and the groove depth is 0.5mm; the coaxial connector 3 is fixedly mounted on the base plate 1 through a mounting hole, and the mounting position coordinate is (0, ±k×ply), wherein the mounting position coordinate uses the center point of the base plate 1 as the origin, k=0.25, ply=9.39 mm, and the mounting position coordinate in this embodiment is (0, k×ply). In array applications, the base plate 1 can be designed as a single piece for all units, while the base plate 1 is suitably modified to incorporate decoupling structures such as partition walls, base plate slots, etc.
As shown in fig. 4 and 5, the material of the support structure 2 is polytetrafluoroethylene, and the dielectric constant thereof is about 2.1. In order to ensure a better supporting effect, the plane dimension parameter of the supporting structure 2 is consistent with the dimension of the mounting groove, and the critical dimension parameter bx '=17 mm and by' =12.5 mm, and the negative tolerance is-0.05 mm in actual processing. To ensure a certain broadband characteristic it is necessary to ensure that the radiating structure 4 has a certain height, whereas the height of the radiating structure 4 from the ground depends on the height of the support structure 2. The height of the support structure 2 is designed to be 0.1 lambda in the present invention 0 10%, where lambda 0 The height bh' =4.5 mm of the support structure 2 in this embodiment is the center frequency wavelength of the antenna. The supporting structure 2 is mainly used for supporting the dielectric plate 42 of the radiation structure 4, and for reducing weight and facilitating installation of the coaxial connector 3, the inside of the supporting structure 2 is provided with a hollow structure, and the plane size of the hollow structure is greater than or equal to the radiation patchThe planar dimensions of the sheet 44, which are smaller than the planar dimensions of the dielectric plate 42, can ensure the supporting strength while reducing the weight. To further ensure a lighter weight of the support structure 2, the support structure 2 is arranged coaxially with the centre of the base plate 1. In array applications, the support structure 2 may be designed as one piece with adjacent cells.
The coaxial connector 3 is a common coaxial microstrip-to-microstrip connector, and connectors such as sma, smp, N type and the like can be adopted according to actual needs. As shown in fig. 6, the coaxial connector 3 includes an outer conductor 31, a medium 32, and an inner conductor 33 coaxially disposed in this order from outside to inside; the outer conductor 31 and the medium 32 are flush in height, and the inner conductor 33 is higher than the upper end surfaces of the outer conductor 31 and the medium 32. The probe on top of the inner conductor 33 is inserted into the radiating structure 4 from below, eventually flush or slightly below the radiating patch 44, and remains well conductive with the radiating structure 4 by soldering. The coaxial connector 3 is selected according to the working frequency, in this embodiment, a sma-microstrip-to-microstrip coaxial connector is selected, the sma end of the connector is a conventional size, and the microstrip end is changed, as shown in fig. 7, the heights cwh =2.87 mm of the upper end surfaces of the medium 32 and the outer conductor 31 from the upper end surface of the bottom plate 1, the height cnh=1.85 mm of the upper end surface of the inner conductor 33 from the upper end surface of the medium 32, the diameter r1=0.7 mm of the inner conductor 33, the diameter r2=2.4 mm of the medium 32 is polytetrafluoroethylene, and the characteristic impedance is about 50Ω.
The radiating structure 4 is the most complex part of the system, and is also the part that is decisive for the overall performance, and is realized in a double-layer PCB process. The radiation structure 4 is arranged on the top of the support structure 2, and the substrate material of the radiation structure is RO4003 type plate material, the plate thickness is 0.76mm, the dielectric constant is 3.55, and the copper-clad thickness is 0.035mm. As shown in fig. 8-10, the radiating structure 4 includes a capacitive patch 41, a dielectric plate 42, a coupling feed structure 43, and a radiating patch 44, which are disposed in order from bottom to top. The capacitive patch 41 is coaxially disposed with the coaxial connector 3, the capacitive patch 41, the dielectric plate 42, and the inner conductor 33 have first and second through holes, respectively, and the radiation patch 44 has a third through hole corresponding to the coupling feed structure 43. The coupling feed structure 43 includes a microstrip line and its external bonding pad, the microstrip line of the coupling feed structure 43 is connected with the radiation patch 44, and the upper end of the inner conductor 33 sequentially passes through the capacitorThe first via of the sexual patch 41 and the second via of the dielectric plate 42 are soldered to the pads of the coupling feed structure 43. The capacitive patch 41 is in communication with the coupling feed structure 43 through a second via in the dielectric plate 42. The radiation patch 44 has a size plx =9.42 mm, ply=9.39 mm, and a through hole with a hole diameter pcr=1.09 mm is formed therein. The capacitive patch 41 is located at the lower layer of the PCB and is used for eliminating inductance caused by overlong inner conductor 33 in the coaxial connector 3; to further ensure a better broadband characteristic of the antenna structure, the size of the capacitive patch 41 is set to 0.062 x 0 Ply (0.5-k), the outer diameter cpr of the capacitive patch 41 in this embodiment=2.49 mm, the center point of which coincides with the center point of the inner conductor 33 of the coaxial connector 3. Dielectric plate 42 has dimensions subx=1.2×plx and suby=1.2×ply. The linewidth tw=0.7 mm of the microstrip line of the coupling feed structure 43, and the pad radius size via_r=0.65 mm. The radiating patches 44, the dielectric plate 42 and the center point of the bottom plate 1 coincide to ensure overall light weight and low cross polarization.
The weak points of the power capacity of the antenna structure occur mainly at the following four locations of the radiating structure 4: 1. four corners of the radiating patch 44; 2. a gap between the lower end face of the capacitive patch 41 and the upper end face of the outer conductor 31; 3. the edges of the capacitive patch 41; 4. the pad edges of the feed structure 43 are coupled. The lowest power capacity of the four positions determines the power capacity of the whole antenna, so that it is meaningless to simply optimize the power capacity of one position, and the field strengths of the four positions need to be ensured to be optimized to a relatively low range. Meanwhile, the metal part can be isolated from being in direct contact with air through the solder mask coating, the breakdown threshold is increased, the purpose of improving the power capacity is achieved, the part capable of carrying out the solder mask coating in the embodiment is the four corners of the radiation patch 44 and the edge of the capacitive patch 41, the breakdown power threshold of the position after the solder mask coating is calculated to be about 2 times of the non-coating position, and the field intensity is about 1.4 times, namely, in four positions, the field intensity of the four corners of the radiation patch 44 and the edge of the capacitive patch 41 can be 1.4 times of the field intensity of the gap between the lower end face of the capacitive patch 41 and the upper end face of the outer conductor 31 and the edge of the bonding pad of the coupling feed structure 43.
The specific power capacity optimization method is described below: 1. four corners of the radiation patch 44 are arranged in an arc shape. 2. The gap between the lower end surface of the capacitive patch 41 and the upper end surface of the outer conductor 31 is within 1mm, so that a relatively large field intensity distribution appears on the upper end surface of the outer conductor 31, the field intensity at the position is remarkably reduced along with the increase of the distance, as shown in fig. 11, when the gap between the lower end surface of the capacitive patch 41 and the upper end surface of the outer conductor 31 is 0.1mm, a large number of white spots are displayed at the gap, and the field intensity at the position is relatively large; as shown in fig. 12, when the gap between the lower end face of the capacitive patch 41 and the upper end face of the outer conductor 31 is 1mm, the field intensity maximum point occurs between the lower end face of the capacitive patch 41 and the upper end face of the outer conductor 31. As can be seen from fig. 13, the gap between the lower end face of the capacitive patch 41 and the upper end face of the outer conductor 31 is further widened by 1mm or more, and the field strength at the junction of the upper end face of the medium 32 and the inner conductor 33 is substantially stabilized. However, the larger the gap is, the larger the probe impedance inductive portion is, and the bandwidth upper limit which can be optimized is reduced, so that the gap is generally determined to be between 1mm and 2mm, and the upper limit is not required for the application with low bandwidth requirement. 3. The size of the capacitive patch 41 has an effect on both the edge field strength of the capacitive patch 41 and the edge field strength of the pad of the coupling feed structure 43, and the two field strengths increase when the size is reduced, so the size of the capacitive patch 41 is recommended to be not less than 2.2mm, i.e. 0.062 x. 4. To further increase the power capacity, a solder mask 45 is applied to the edges of the capacitive patch 41. The processing of the four aspects improves the power capacity of the radiation structure 4, thereby improving the power capacity of the whole antenna.
In addition, the clearance between the lower end surface of the capacitive patch 41 and the upper end surface of the outer conductor 31 and the reasonable design of the size of the capacitive patch 41 further ensure the better broadband characteristic of the antenna structure.
The simulation results of fig. 14 to 18 can be obtained after modeling and calculating the antennas of the dimensional parameters in the embodiment in electromagnetic simulation software. When the gap between the lower end surface of the capacitive patch 41 and the upper end surface of the outer conductor 31 increases, the field strength decreases, and after a gap of 1mm to 2mm is selected, the maximum field strength of the antenna is concentrated on the radiation structure 4. Fig. 14 and 15 show the surface field distribution of the top layer of the radiating structure 4, and fig. 16 shows the surface field distribution of the bottom layer of the radiating structure 4, and it can be seen that the local field strength is reduced after the four corners of the radiating patch 44 are subjected to arc treatment, and the maximum field strength appears at the edge of the capacitive patch 41. Because the capacitive patch 41 is of a larger size and is circular, the field intensity cannot be suppressed in shape, as shown in fig. 19, the edge of the capacitive patch 41 is coated with the solder mask 45, so that the isolation between metal and air is realized, the power capacity is improved, the outer diameter smr of the solder mask 45 is larger than the outer diameter cpr of the capacitive patch 41 by more than 1mm, namely, the distance of the outer edge of the solder mask 45 beyond the edge of the capacitive patch 41 is more than or equal to 1mm, and the inner diameter smr of the solder mask 45 is more than or equal to 1mm. In addition, it can be seen from the antenna standing wave graph shown in fig. 17 and the antenna gain graph shown in fig. 18 that the designed antenna has good electrical performance, and the relative bandwidth is close to 20%.
Finally, the designed antenna is processed and power tested by a test platform as shown in fig. 20, and the test method specifically comprises the following steps:
1) Building test platform
The test platform comprises a microwave source 5, an incident wave constant coupler 6, a reflected wave constant coupler 10, a wave-to-wave converter 13, a camera bellows 16 and a test unit, wherein the incident wave constant coupler 6, the reflected wave constant coupler 10, the wave-to-wave converter 13, the camera bellows 16 and the test unit are sequentially connected along the microwave transmission direction; the test unit comprises a first attenuator group 7, a first detector 8, a second attenuator group 11, a second detector 12, an oscilloscope 9, a first cable 14 and a first connector 15.
The output of the microwave source 5 is connected with an incident wave fixed coupler 6 with the coupling degree of 40dB, the coupling end output of the incident wave fixed coupler 6 is connected with a first attenuator group 7 with the coupling degree of 20dB, the output of the first attenuator group 7 is connected with a first detector 8, and the first detector 8 outputs an incident wave video signal to a first port of an oscilloscope 9; the direct connection of the incident wave fixed coupler 6 is connected with a reflection wave fixed coupler 10 with the coupling degree of 40dB, the coupling end output of the reflection wave fixed coupler 10 is connected with a second attenuator group 11 with 20dB, the output of the second attenuator group 11 is connected with a second detector 12, and the second detector 12 outputs a reflection wave video signal to a second port of the oscilloscope 9; the straight-through end of the reflection wave constant coupler 10 is connected with the wave same converter 13; the output of the wave-to-wave converter 13 is connected with a first connector 15 on a camera bellows 16 through a first cable 14; because the BJ 100-to-SMA type wave-to-converting power capacity is insufficient in actual measurement, breakdown is easy to occur, the wave-to-converting device 13 in the method adopts the BJ 100-to-N type wave-to-converting device, when the transmission mode of the waveguide is converted into the coaxial mode, the power capacity of the link is always higher than that of the antenna to be tested, so that the antenna to be tested is prevented from being broken down in the test process.
2) Connecting antenna to be tested and test platform
Placing the antenna to be tested on a wooden platform in the camera bellows 16; and the input end of the antenna to be tested is connected with the output end of the first connector 15 through the second connector 18 and the second cable 17 in sequence, and specifically, different second connectors 18 are selected for connection according to the input port form of the antenna to be tested.
3) Performing antenna power testing
Along with the power increase of the microwave source 5, when the reflected wave video signal is deformed, the power P1 of the antenna to be measured is calculated according to the voltage V of the incident wave video signal at the moment of the oscilloscope 9, and the power capacity of the antenna to be measured is obtained. The voltage V of the incident wave video signal observed by the oscilloscope 9 is converted into a power value P by a calibration value of the first detector 8, and the power p1=power value p+the coupling degree of the incident wave fixed coupler 6+the attenuation value of the first attenuator group 7, the insertion loss of the incident wave fixed coupler 6, the insertion loss of the reflected wave fixed coupler 10, the insertion loss of the same converter 13, the insertion loss of the first cable 14, the insertion loss of the second cable 17, the insertion loss of the first connector 15 and the insertion loss of the second connector 18 of the antenna to be tested are all the same.
Meanwhile, the high-power patch antenna provided by the invention can also refer to whether the antenna is broken down or not through the change of the reflection coefficient when the power of the microwave source 5 is increased. The reflected wave video signal voltage V 'observed by the oscilloscope 9 is converted into a power value P' by the second detector 12, and the reflected power P1 '=power value P' +the coupling degree of the reflected wave fixed coupler 10, the attenuation value of the second attenuator group 11, the insertion loss of the reflected wave fixed coupler 10, the insertion loss of the same-wave converter 13, the insertion loss of the first cable 14, the insertion loss of the second cable 17, the insertion loss of the first connector 15 and the insertion loss of the second connector 18 are all the reflected wave video signal voltages. The reflection coefficient is obtained by calculating the reflection power P1' of the antenna to be tested at the moment, when the fluctuation of the reflection coefficient is stable, the antenna is proved to be broken down when obvious fluctuation occurs before the antenna is broken down.
According to the power test method, the high-power patch antenna of the embodiment finally obtains the result that 20kW and 1us pulse width signals are not broken down under injection. In the test, the reflected wave and the transmitted wave (the video waveform after the microwave signal received by the receiving antenna passes through the wave detector after being attenuated) are in complementary relation, so that the reflected wave only needs to be observed and recorded.
The foregoing description is only for the purpose of illustrating the technical solution of the present invention, but not for the purpose of limiting the same, and it will be apparent to those of ordinary skill in the art that modifications may be made to the specific technical solution described in the foregoing embodiments, or equivalents may be substituted for parts of the technical features thereof, without departing from the spirit of the technical solution of the present invention.

Claims (10)

1. The utility model provides a high power capacity broadband microstrip patch antenna, includes bottom plate (1), installs bearing structure (2) on bottom plate (1), sets up coaxial connector (3) in bearing structure (2) and install on bottom plate (1) and installs radiation structure (4) in bearing structure (2) upper end, its characterized in that:
the bottom plate (1) is a metal plate;
the coaxial connector (3) comprises an outer conductor (31), a medium (32) and an inner conductor (33) which are coaxially arranged in sequence from outside to inside; the inner conductor (33) is higher than the upper end surfaces of the outer conductor (31) and the medium (32);
the radiating structure (4) comprises a capacitive patch (41), a dielectric plate (42), a coupling feed structure (43) and a radiating patch (44) which are sequentially arranged from bottom to top;
the capacitive patch (41), the dielectric plate (42) and the inner conductor (33) are respectively provided with a first through hole and a second through hole at the corresponding positions; a third through hole is formed in a position, corresponding to the coupling feed structure (43), of the radiation patch (44);
the coupling feed structure (43) comprises a microstrip line and a bonding pad outside the microstrip line;
the microstrip line of the coupling feed structure (43) is connected with the radiation patch (44);
the upper end of the inner conductor (33) sequentially passes through a first through hole of the capacitive patch (41) and a second through hole of the dielectric plate (42) to be welded with a bonding pad of the coupling feed structure (43);
the capacitive patch (41) is communicated with the coupling feed structure (43) through a second through hole on the dielectric plate (42);
four corners of the radiation patch (44) are arranged in an arc shape;
the edge of the capacitive patch (41) is provided with a solder mask layer (45), and the size of the capacitive patch (41) is set to be 0.062 lambda 0 Ply (0.5-k), where lambda 0 Ply is the length of the radiating patch (44) and k is a dimensionless coefficient;
a gap is arranged between the lower end face of the capacitive patch (41) and the upper end face of the outer conductor (31).
2. The high power capacity broadband microstrip patch antenna according to claim 1, wherein: the height of the support structure (2) is set to 0.1 x lambda 0 ±10％。
3. A high power capacity broadband microstrip patch antenna according to claim 2, wherein: and the mounting position coordinates of the coaxial connector (3) on the bottom plate (1) are (0, +/-k) ply, and the mounting position coordinates take the center point of the bottom plate (1) as an origin.
4. A high power capacity broadband microstrip patch antenna according to claim 3, wherein: the base plate (1) is provided with a mounting groove, and the supporting structure (2) is mounted in the mounting groove.
5. The high power capacity broadband microstrip patch antenna according to claim 4, wherein: the support structure (2) is internally provided with a hollow structure, and the plane size of the hollow structure is larger than or equal to that of the radiation patch (44) and smaller than that of the dielectric plate (42).
6. The high power capacity broadband microstrip patch antenna according to claim 5, wherein: the support structure (2) is arranged in the center of the bottom plate (1).
7. A method of testing the power of a high power capacity wideband microstrip patch antenna as claimed in any one of claims 1 to 6, comprising the steps of:
1) Building test platform
The testing platform comprises a microwave source (5), an incident wave definite coupler (6), a reflected wave definite coupler (10), a wave-to-wave converter (13), a camera bellows (16) and a testing unit, wherein the incident wave definite coupler (6), the reflected wave definite coupler (10), the wave-to-wave converter (13) and the camera bellows (16) are sequentially connected along the microwave transmission direction; the test unit comprises a first attenuator group (7), a first detector (8), a second attenuator group (11), a second detector (12), an oscilloscope (9), a first cable (14) and a first connector (15);
the output of the microwave source (5) is connected with an incident wave constant coupler (6), the output of the coupling end of the incident wave constant coupler (6) is connected with a first attenuator group (7), the output of the first attenuator group (7) is connected with a first detector (8), and the first detector (8) outputs an incident wave video signal to a first port of an oscilloscope (9); the output of the coupling end of the reflected wave constant coupler (10) is connected with a second attenuator group (11), the output of the second attenuator group (11) is connected with a second detector (12), and the second detector (12) outputs a reflected wave video signal to a second port of the oscilloscope (9); the output of the wave-to-wave converter (13) is connected with a first connector (15) on the camera bellows (16) through a first cable (14);
2) Connecting antenna to be tested and test platform
Placing an antenna to be tested on a wooden platform in a camera bellows (16); the input end of the antenna to be tested is connected with the output end of the first connector (15) through the second connector (18) and the second cable (17) in sequence;
3) Performing antenna power testing
Along with the power rise of the microwave source (5), when the reflected waveform is deformed, the power P1 of the antenna to be measured at the moment is calculated according to the video signal voltage V of the incident wave at the moment of the oscilloscope (9), and the power capacity of the antenna to be measured is obtained.
8. The method for testing the power of the high-power capacity broadband microstrip patch antenna according to claim 7, wherein:
in step 3), the power P1 of the antenna to be measured at the moment is calculated according to the incident wave video signal voltage V at the moment of the oscilloscope (9), specifically: converting the voltage V of the incident wave video signal observed by the oscilloscope (9) into a corresponding power value P through the calibration value of the first detector (8);
the power P1=converted power value P+the coupling degree of the incident wave fixed coupler (6) and the attenuation value of the first attenuator group (7), the insertion loss of the incident wave fixed coupler (6), the insertion loss of the reflected wave fixed coupler (10), the insertion loss of the wave same converter (13), the insertion loss of the first cable (14), the insertion loss of the second cable (17), the insertion loss of the first connector (15) and the insertion loss of the second connector (18) are all the power values P=converted.
9. The method for testing the power of the high-power capacity broadband microstrip patch antenna according to claim 8, wherein the method comprises the steps of:
in step 1), the wave-to-phase converter (13) is a BJ 100-to-N type wave-to-phase converter.
10. The method for testing the power of the high-power capacity broadband microstrip patch antenna according to claim 9, wherein the method comprises the steps of:
in the step 1), the first cable (14) is an N-type low-insertion-loss cable;
in the step 2), the second cable (17) is an N-type low-insertion-loss cable.
CN202210495986.9A 2022-05-05 2022-05-05 High-power capacity broadband microstrip patch antenna and power testing method thereof Active CN114744398B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103151620A (en) * 2013-02-04 2013-06-12 中国人民解放军国防科学技术大学 High power microwave radial line slit array antenna
CN105244614A (en) * 2015-10-29 2016-01-13 中国船舶重工集团公司第七二四研究所 Broadband capacitive feed miniature microstrip paster antenna

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101318830B1 (en) * 2010-09-07 2013-10-17 쿤지에 쭈앙 Dual-polarized microstrip antenna

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103151620A (en) * 2013-02-04 2013-06-12 中国人民解放军国防科学技术大学 High power microwave radial line slit array antenna
CN105244614A (en) * 2015-10-29 2016-01-13 中国船舶重工集团公司第七二四研究所 Broadband capacitive feed miniature microstrip paster antenna

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
周雨薇.射频接收整流天线的研究与应用.广东工业大学.2011,全文. *

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