CN114744005A - Chip structure with paramagnetic light-emitting component and manufacturing method thereof - Google Patents
Chip structure with paramagnetic light-emitting component and manufacturing method thereof Download PDFInfo
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- CN114744005A CN114744005A CN202110148459.6A CN202110148459A CN114744005A CN 114744005 A CN114744005 A CN 114744005A CN 202110148459 A CN202110148459 A CN 202110148459A CN 114744005 A CN114744005 A CN 114744005A
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- 239000002184 metal Substances 0.000 claims abstract description 63
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- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 23
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- 229910052802 copper Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
The invention provides a chip structure with paramagnetic light-emitting components and a manufacturing method thereof, wherein the manufacturing method comprises the steps of forming an epitaxial layer on a first substrate, executing a first etching process, removing the first substrate after arranging an insulating layer, a plurality of welding pads and a temporary substrate, then bonding a magnetic metal structure on the top surface of the epitaxial layer, removing the temporary substrate, and continuously executing a second etching process and a cutting process to form a chip structure with paramagnetic light-emitting components. The chip structure and the manufacturing method thereof disclosed by the invention improve the soft magnetism of the original substrate, have better initial permeability, and have the effects of automatically overturning and aligning crystal grains, thereby not only effectively improving the flow of the conventional flip chip bonding, but also conforming to the rapid mass transfer technology of the industry.
Description
Technical Field
The invention relates to a process technology of a chip with a paramagnetic light-emitting component, in particular to a chip structure which can achieve automatic turning and alignment through the magnetic force difference of an upper layer and a lower layer of a substrate in the chip structure and can be applied to flip chip bonding and a manufacturing method thereof.
Background
Micro light emitting diodes (Micro LEDs) are an emerging technology after LED scaling and matrixing that can integrate high density and Micro-sized LED arrays on a wafer, where each pixel is addressable and driven to light individually. However, although with the continuous development of Micro LEDs, the manufacturing cost of Micro LEDs is still high so far, and the commercial process of Micro LEDs is affected, the key reason of which is that: the micro-assembly technology bottleneck of Mass Transfer (Mass Transfer) is not broken through. The traditional method only uses a mechanical arm to independently and repeatedly clamp the Micro LED chip in a reciprocating manner, so that the old method for transferring the Micro LED chip to the substrate is not only too high in cost, but also high in operation time, which is one of the important bottlenecks that the Micro LED cannot successfully achieve mass transfer at present, and the problems of too high requirements on time, labor, cost and the like are encountered in manufacturing and cost.
Furthermore, Flip Chip (Flip Chip), also called Flip Chip package or Flip Chip packaging method, is one of the Chip packaging technologies. This packaging technology is mainly different from the packaging method of the past chip, and conventionally, the chip is placed on a substrate (chip pad), and then the chip is connected to the connection point on the substrate by wire bonding. The flip chip packaging technology is named by directly connecting a bump (bump) with a chip connection point and then turning over the chip to directly connect the bump and a substrate (substrate). Since the flip chip technology is much more convenient than other Ball Grid Array (BGA) technologies in the form of interconnection with a substrate or a substrate, the flip chip technology has become a mainstream packaging technology widely used in microprocessor packaging and the like. With the market push for flip chip technology, the package industry generally has to provide the complete service of 8 "and 12" wafer probe testing, bump growth, assembly to final testing.
Generally, since the conventional method has fewer connecting contacts (bonding pads) during the macro-transfer process of the Micro LED, additional process steps must be combined to flip the die during the flip-chip bonding process, and these additional steps also have a very complicated and redundant role in the macro-transfer process of the Micro LED, including: additional process steps, additional labor hours and cost, etc., all of which are problems that need to be overcome in the prior art.
In view of the above, it is highly desirable to take various considerations into account the many deficiencies listed above.
Disclosure of Invention
The invention provides a chip structure with paramagnetic light-emitting element and a manufacturing method thereof, aiming at providing a paramagnetic light-emitting element with initial permeability, bonding the light-emitting element with a circuit board through a flip chip bonding process, and forming a vertical light-emitting diode grain by placing the light-emitting element on the circuit board, so that the vertical light-emitting diode grain has the initial permeability. The chip structure manufactured by the invention can successfully meet the industry for rapid mass transfer technology due to better soft magnetism and initial permeability.
Furthermore, another objective of the present invention is to provide a natural magnetic inversion effect, which is based on a certain magnetic force difference between the epitaxial layer and the nickel-iron alloy layer in the light emitting device to form the paramagnetism. The difference in magnetic force will enable each completed die to automatically flip even if not aligned in direction, and an optimal result of an automatic flip and alignment design is achieved when flip chips are bonded to a circuit board. By the effect of automatic reverse rotation of the crystal grain, when the subsequent micro-light emitting diode mass transfer process is combined, the operation steps such as alignment and the like which are additionally executed when the traditional flip chip bonding process and step are adopted can be omitted, so that the complex time consumption, the operation labor force and other costs are saved, and the rapid mass transfer requirement of the industry can be met.
In view of the above, according to the method for manufacturing a chip structure having a paramagnetic light emitting element disclosed in the present invention, the method for manufacturing a chip structure having a paramagnetic light emitting element includes the steps of: first, a first substrate is provided, and an epitaxial layer is formed on the first substrate. And finally, executing a first etching process to form at least two cavities in the epitaxial layer. An insulating layer is provided and is arranged on the epitaxial layer and fills the cavities. At least one first welding pad and two second welding pads are arranged through the insulating layer, wherein each second welding pad is arranged in a cavity. And then, after a temporary substrate is provided on the insulating layer, removing the first substrate to enable the first welding pads and the second welding pads to be clamped between the epitaxial layer, the insulating layer and the temporary substrate. And finally, bonding a magnetic metal structure on the top surface of the epitaxial layer, and removing the temporary substrate, wherein the magnetic metal structure has initial permeability. And then, starting from the top surface of the magnetic metal structure, and continuously executing a cutting process to finish cutting the magnetic metal structure to form a chip structure with a paramagnetic light-emitting element.
Alternatively, the first etching process and the second etching process may be a mesa etching. The cutting process can be a cutter wheel cutting, and the cutting precision of the cutter wheel cutting is 10 μm.
According to the embodiment of the invention, the formed chip structure with the paramagnetic light-emitting element can be automatically turned over and aligned and is jointed with a circuit board through a flip chip jointing process, and a vertical light-emitting diode grain can be further formed by arranging the chip structure on the circuit board and has the initial permeability. Therefore, the vertical light emitting diode die can conduct a micro current to the epitaxial layer through the initial permeability.
Furthermore, in an embodiment of the present invention, the magnetic metal structure at least comprises a nickel-iron alloy layer (Invar). In another embodiment of the present invention, the magnetic metal structure may also include a layer of nickel-iron alloy and a Copper layer (Copper) on the layer of nickel-iron alloy. The nickel-iron alloy layer and the copper layer can be combined in a cutting, vacuum heating and grinding and polishing mode, so that the magnetic metal structure disclosed by the invention can simultaneously have high thermal conductivity, low thermal expansion coefficient and initial magnetic permeability.
On the other hand, according to another embodiment of the present invention, a debonding layer may also be selectively disposed between the epitaxial layer and the magnetic metal structure, so that the magnetic metal structure is bonded to the top surface of the epitaxial layer through the debonding layer. In this embodiment, the debonding layer may be a thermal debonding layer or a cold debonding layer. When the debonding layer is a thermal debonding layer, the chip structure with the paramagnetic light-emitting element formed by the invention can be automatically peeled off by directly increasing the ambient temperature to more than 100 ℃ after the chip structure is automatically turned over and aligned and bonded to the circuit board through the flip chip bonding process, so that the magnetic metal structure can be quickly removed. Or, when the debonding layer is a cold debonding layer, the present invention may also optionally reduce the ambient temperature to below-20 ℃, so that the cold debonding layer may be automatically peeled off to remove the magnetic metal structure more quickly.
Furthermore, the present invention also discloses a chip structure with paramagnetic light emitting device, comprising: a magnetic metal structure having an initial permeability; an epitaxial layer arranged on the magnetic metal structure, wherein at least two cavities are formed in the epitaxial layer; an insulating layer disposed on the epitaxial layer and filling the cavities; and a plurality of welding pads which penetrate through the insulating layer and are connected with the epitaxial layer at the bottom of the insulating layer to provide electrical conduction of external signals, wherein the welding pads comprise at least one first welding pad and two second welding pads, and each second welding pad is arranged in a cavity.
According to the chip structure disclosed in the present invention, the magnetic metal structure at least comprises a nickel-iron alloy layer, or optionally a copper layer on the nickel-iron alloy layer is further provided. Based on the property that the material of the innovative magnetic metal structure has certain magnetic force difference with the epitaxial layer to form paramagnetism, the chip structure manufactured by the invention can be directly subjected to a flip chip bonding process to enable the formed chip structure to be automatically turned over and aligned, and the welding pads are bonded to a circuit board to provide electrical conduction of external signals.
The following detailed description of the preferred embodiments, taken in conjunction with the accompanying drawings, will make it easier to understand the objects, technical contents, features and effects of the present invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
Fig. 1 is a schematic flow chart illustrating steps of a method for manufacturing a chip structure having a paramagnetic light emitting device according to an embodiment of the present invention;
FIG. 2A is a schematic structural diagram corresponding to step S102 according to an embodiment of the present invention;
FIG. 2B is a schematic structural diagram corresponding to step S104 according to an embodiment of the present invention;
FIG. 2C is a schematic structural diagram corresponding to step S106 according to an embodiment of the present invention;
fig. 2D is a schematic structural diagram corresponding to step S108 according to an embodiment of the present invention;
FIG. 2E is a schematic structural diagram corresponding to step S110 according to the embodiment of the invention;
FIG. 2F is a schematic structural diagram of step S110 according to the present invention;
FIG. 2G is a schematic structural diagram corresponding to step S112 according to an embodiment of the present invention;
FIG. 2H is a schematic structural diagram illustrating step S112 according to an embodiment of the present invention;
fig. 2I is a schematic structural diagram corresponding to step S114 according to an embodiment of the present invention;
fig. 2J is a schematic structural diagram corresponding to step S116 according to an embodiment of the invention;
FIG. 2K is a diagram illustrating a chip structure having a paramagnetic light emitting device according to an embodiment of the present invention;
FIG. 3A is a schematic diagram of a disclosed magnetic metal structure including a layer of nickel-iron alloy in accordance with one embodiment of the present invention;
FIG. 3B is a schematic diagram of a magnetic metal structure including a nickel-iron alloy layer and a copper layer according to another embodiment of the present invention;
FIG. 4 is a schematic diagram of a chip structure with paramagnetic light-emitting devices bonded to a circuit board via a flip chip according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a wafer including a plurality of dies for bulk transfer according to an embodiment of the invention;
FIG. 6 is a schematic diagram illustrating a magnetic metal structure bonded to a top surface of an epitaxial layer via a debonding layer according to another embodiment of the present invention;
fig. 7A is a schematic structural diagram of a first bonding pad and a second bonding pad according to an embodiment of the invention;
fig. 7B is a schematic structural diagram of a first bonding pad and a second bonding pad according to another embodiment of the invention.
Description of the symbols:
11-cavity, 15-chip structure with paramagnetic light-emitting element; 21-a first substrate, 22-a temporary substrate; 31-first pad, 32-second pad; 41-welding spots; 50-wafer, 51-die, 52-die, 53-die;
200-magnetic metal structure, 201-nickel-iron alloy layer, 203-copper layer, 202-epitaxial layer, 204-insulating layer; 400-circuit board, 600-debonding layer;
m1-first etching process, M2-second etching process, D1-cutting process;
s102, S104, S106, S108, S110, S112, S114, S116.
Detailed Description
The above description and the following embodiments are provided to illustrate and explain the principles and the spirit of the present invention and to provide further explanation of the scope of the invention as claimed. The features, operation and efficacy of the present invention will now be described in detail in connection with the preferred embodiments illustrated in the accompanying drawings.
In view of the above drawbacks of the prior art, the present invention is directed to a chip structure with paramagnetic light emitting device and a method for manufacturing the same, in which vertical light emitting diode grains are fabricated on a substrate with initial permeability and better soft magnetism, and the present invention can satisfy the requirement of mass transfer of Micro light emitting diodes by applying the technology of magnetic array absorption through the special soft magnetism of the substrate, thereby solving the problems of excessively large and complicated manufacturing cost and process of the conventional Micro LED.
Meanwhile, the invention can also make each finished grain achieve the effect of automatic turning even if the direction of the grain is not aligned through the paramagnetism of the luminous element, namely the magnetic force difference between the upper layer and the lower layer in the substrate, so that the alignment of the grain distribution position achieves the accuracy. When the flip chip is jointed to an existing circuit board, the disclosed light-emitting element has paramagnetism, and has the effects of automatically turning and aligning the crystal grains, thereby effectively avoiding the problems of extra operation time, huge manpower, excessive cost and the like when the flip chip is jointed by using the traditional method.
In view of the above, referring to fig. 1 of the present disclosure, which is a schematic step flow diagram of a method for manufacturing a chip structure having a paramagnetic light emitting device according to an embodiment of the present disclosure, the manufacturing method disclosed in the present disclosure mainly includes steps S102, S104, S106, S108, S110, S112, S114, and S116 shown in the figure. Referring to the structure and its reference numerals shown in fig. 2A to 2K, the present invention provides the following detailed description:
in step S102 and fig. 2A, a first substrate 21 is provided, and an epitaxial layer 202 is formed on the first substrate 21. Then, as shown in step S104 and fig. 2B, a first etching process M1 is performed to form at least two cavities 11 in the epitaxial layer 202, wherein the first etching process M1 may be performed by a mesa etching (mesa etching) to form the cavities 11 in the epitaxial layer 202 for subsequent mounting of pads. Thereafter, in step S106 and fig. 2C, an insulating layer 204 is provided on the epitaxial layer 202, and the insulating layer 204 fills the cavity 11. Then, as shown in step S108 and fig. 2D, at least one first bonding pad 31 and two second bonding pads 32 are disposed, wherein each second bonding pad 32 is formed in a corresponding cavity 11, and the bonding pads (including the first bonding pad 31 and the second bonding pad 32) penetrate through the insulating layer 204 and are electrically connected to the epitaxial layer 202 at the bottom of the insulating layer 204 to provide electrical conduction for subsequent external signals. According to an embodiment of the present invention, each of the second pads 32 is symmetrically disposed on two different sides of the first pad 31, for example, when the method is applied to a semiconductor process, the first pad 31 and the second pad 32 can be respectively used as a contact (pad) for electrically connecting a P-type semiconductor (P-type) and an N-type semiconductor (N-type) to provide a subsequent back-end process such as wire bonding of an electrical trace.
Subsequently, as shown in step S110 and fig. 2E, the invention further provides a temporary substrate 22 on the insulating layer 204, and then, as shown in fig. 2F, the first substrate 21 is removed, and the first bonding pads 31 and the second bonding pads 32 are sandwiched between the epitaxial layer 202, the insulating layer 204 and the temporary substrate 22. In one embodiment of the present invention, the first substrate 21 can be removed by a laser step or an etching process, wherein the laser is not limited to a conventional laser wavelength, or a pico-second laser (pico-second laser) or a femtosecond laser (femto-second laser) with higher accuracy. For example, when the finally formed light emitting device is a diode device capable of emitting blue light or green light, the first substrate 21 mentioned herein may be removed by a laser. In addition, if the light emitting device is a diode device capable of emitting red light, the first substrate 21 may be removed by an etching process. In general, those skilled in the art will be able to modify and adapt their design according to the actual product specifications and application requirements, but such adaptations and modifications are within the scope of the present invention.
Thereafter, as shown in step S112, the present invention continues to bond a magnetic metal structure 200 on the top surface of the epitaxial layer 202 as shown in fig. 2G, wherein the magnetic metal structure 200 used in the present invention is invented by the applicant through innovative thinking and special design, and is characterized in that: based on the special characteristics of the substrate, the Magnetic metal structure 200 may have better soft magnetism and Initial Permeability (Initial Magnetic Permeability) than the conventional substrate, under such conditions, the structure itself may be used as an effective Magnetic conductive structure, and the Magnetic array adsorption principle may be combined in the subsequent process only by combining with Magnetic equipment, such as a tiny Magnetic probe, to complete a large amount of adsorption at one time, so as to be applied to mass transfer of industry, thereby achieving excellent efficacy. Fig. 3A and 3B illustrate a magnetic metal structure 200 according to two possible embodiments of the present disclosure, wherein the magnetic metal structure 200 comprises a nickel-iron alloy layer 201, as shown in fig. 3A, or alternatively, the magnetic metal structure 200 may comprise a nickel-iron alloy layer 201 and a copper layer 203 on the nickel-iron alloy layer 201, as shown in fig. 3B. The nickel-iron alloy layer 201 used may be, for example, a nickel-iron alloy containing nickel up to 36%. The copper layer 203 on the nickel-iron alloy layer 201 can be used for further point testing of the chip. The invar layer 201 and the copper layer 203 according to the present disclosure can be formed by cutting, vacuum heating, and polishing, so that the magnetic metal structure 200 can have not only an initial magnetic permeability, but also a high thermal conductivity and a low thermal expansion coefficient. In the subsequent wire bonding packaging process, better production yield can be provided naturally. Compared with other conventional metal substrates, the magnetic metal structure 200 disclosed in the present invention is thin enough, so that it can provide excellent low thermal expansion coefficient and high thermal conductivity without additional thinning process, and has the advantages of low cost, high yield and easy bonding to the epitaxial layer.
Thereafter, as shown in fig. 2H, the temporary substrate 22 is removed. Next, in step S114, as shown in fig. 2I, a second etching process M2 is performed according to the insulating layer 204 and the epitaxial layer 202, wherein the second etching process M2 may also be performed by a mesa etching (mesa etching), and the second etching process M2 is controlled to terminate at the top surface of the magnetic metal structure 200. After the etching is completed, as shown in step S116 and fig. 2J, a cutting process D1 is performed to complete the cutting of the magnetic metal structure 200, starting from the top surface of the magnetic metal structure 200, and after the cutting process D1 is completed, a chip structure 15 having a paramagnetic light emitting device as shown in fig. 2K is formed.
It is noted that, as shown in fig. 2I and fig. 2J, the second etching process M2 according to the present invention has a slightly wider cutting width than the cutting process D1. Second, considering that the conventional cutting method may have mechanical damage, the cutting process D1 according to the embodiment of the present invention is performed by a knife wheel cutting with a precision of 10 μm. In one embodiment, the estimated cutting time of the single blade can be controlled within one hour, and after the cutting process is completed, a magnetic metal structure with a size suitable for micrometer (μm) scale, for example, a size smaller than 100 μm, is provided, which meets the trend of the miniaturization of light emitting devices in the industry today.
Therefore, the applicant manufactures a chip structure 15 having a paramagnetic light emitting device by the above manufacturing method and the steps disclosed therein, as shown in fig. 2K, including: a magnetic metal structure 200 having an initial permeability; an epitaxial layer 202 disposed on the magnetic metal structure 200, wherein at least two cavities 11 are formed in the epitaxial layer 202; an insulating layer 204 disposed on the epitaxial layer 202 and filling the cavities 11; and at least one first bonding pad 31 and two second bonding pads 32 penetrating the insulating layer 204 and connected to the epitaxial layer 202 at the bottom of the insulating layer 204 for providing electrical conduction of external signals, wherein each second bonding pad 32 is disposed in a corresponding cavity 11. According to the technical solution disclosed in the present invention, the chip structure 15 with the paramagnetic light emitting device is suitable for flip chip bonding (flip chip) to a Printed Circuit Board (PCB), please refer to fig. 4, which is a schematic diagram of the chip structure 15 manufactured according to the embodiment of the present invention bonded to the PCB 400 through a flip chip. For example, as shown in fig. 5, when a wafer 50 has, for example, 8 thousands of dies, and each die includes a chip structure having a paramagnetic light emitting device disclosed in the present invention, in this case, when a carrier or a robot with a magnetic probe sucks the dies 51, 52, 53 and drops them onto a circuit board 400, as shown in fig. 4, a single die (corresponding to a chip structure 15 having a paramagnetic light emitting device) is used, in this case, since a certain magnetic force difference exists between an epitaxial layer 202 and a nickel-iron alloy layer included in a magnetic metal structure 200, based on the magnetic force difference between the upper and lower layers of the chip structure 15, an effect of automatic flipping can be achieved even if the direction of each completed chip structure 15 is not aligned, so that the epitaxial layer 202 can be automatically flipped down, and the first bonding pads 31 and the second bonding pads 32 and the corresponding conductive bumps or solder joints 41 are used to complete the bonding to the circuit board 400 for the subsequent electrical conduction of external signals, and even after the flip chip bonding is completed, the magnetic metal structure 200 can be removed by the back-end process. Then, the chip structure 15 is disposed on the circuit board 400, so as to form a vertical light emitting diode die, which has a better initial permeability, and the vertical light emitting diode die can conduct a micro current through the initial permeability to the conventional epitaxial layer 202.
In an embodiment, when the selected circuit board 400 is a thin film transistor liquid crystal display (TFT), the invention can also successfully implement a Mass Transfer (Mass Transfer) Micro-assembly technique in a Micro LED display panel structure.
Therefore, to sum up, based on the chip structure with paramagnetic light emitting devices disclosed in the present invention, it has better soft magnetism than the prior art, so that the crystal grains themselves can be used as magnetic conductive structures, when the magnetic force is transferred to the circuit board in a huge amount, and in combination with the effect that the crystal grains can be automatically reversed, the upper electrode is grounded, the voltage level of the circuit board is controlled by the Integrated Circuit (IC) chip, so that the light emitting intensity of each crystal grain can be controlled independently, and when the circuit board is subsequently integrated onto the display panel, the purpose of controlling the display panel to emit light in a divisional manner or controlling different light emitting intensities is achieved, thereby effectively improving the competitiveness of the technical scheme disclosed in the industrial development.
Meanwhile, the chip structure with the paramagnetic light-emitting component and the manufacturing method thereof disclosed by the invention can also have the characteristic of automatic inversion through the paramagnetism of the crystal grains, and the alignment (alignment) of the distribution positions of the crystal grains can be accurate when the subsequent flip chip bonding is carried out through the characteristic. The paramagnetism is formed by certain magnetic force difference between the epitaxial layer and the nickel-iron alloy layer in the light-emitting element. The paramagnetism can enable each finished crystal grain to achieve the effects of automatic turning and automatic alignment even if the direction is not aligned, and through the characteristics, the invention also greatly avoids the problem that the requirements of operation working hour, labor force, cost and the like which are additionally burdened when the traditional flip chip bonding is carried out are too high, and provides the optimized advantage of the invention.
On the other hand, fig. 6 discloses a schematic structural diagram of another embodiment of the present invention, as shown in fig. 6, according to another embodiment of the present invention, in the step of bonding the magnetic metal structure 200 on the top surface of the epitaxial layer 202, a debonding layer (debonding layer)600 may be further optionally provided, so that the debonding layer 600 is formed between the epitaxial layer 202 and the magnetic metal structure 200, and thus the magnetic metal structure 200 is bonded to the top surface of the epitaxial layer 202 through the debonding layer 600. In this way, after the chip structure is subsequently processed through steps S112 to S116 shown in fig. 1 to form a chip structure with paramagnetic light emitting devices, and the chip structure is automatically flipped and aligned to complete bonding to the circuit board through the flip chip bonding process shown in fig. 4, the debonding layer 600 can be directly peeled off by changing the environmental temperature, so as to easily remove the magnetic metal structure 200. According to an embodiment of the present invention, the debonding layer 600 may be, for example, a thermal release layer (thermal release layer) or a thermal release film. In this embodiment, the pyrolytic adhesive layer can be peeled at a specific debonding temperature and time, and the invention can automatically peel the pyrolytic adhesive layer by increasing the ambient temperature to more than 100 ℃ to lose the tackiness of the pyrolytic adhesive layer, so that the invention can effectively omit the commonly known chemical etching or physical removal steps, and easily remove the magnetic metal structure in a simpler manner without damaging the chip structure, which is another advantage of the invention.
On the other hand, the debonding layer 600 is not limited to the pyrolytic bonding layer. In another embodiment of the present invention, the debonding layer 600 may also be a cold debonding layer or a cold debonding film, for example. At the moment, the cold glue-dissolving layer can be peeled off at a specific glue-dissolving temperature and time, and the invention can also select to lead the cold glue-dissolving layer to lose viscosity and then peel off automatically by reducing the ambient temperature to be lower than minus 20 ℃, so the magnetic metal structure can be removed easily under the condition of simpler and no damage to the chip structure.
Further, regarding step S108 disclosed in fig. 1 of the present invention, the shape and size of the pads are not limited when the pads are formed, for example, fig. 7A and 7B disclose the first and second pads disclosed in the present invention, which are two possible implementation aspects, and a top view of the pads is shown; the shape of the first pad 31 may be, for example, a circle as shown in fig. 7A or a diamond as shown in fig. 7B; the shape of the second pad 32 may be, for example, a polygonal arc shape as shown in fig. 7A or a polygonal shape as shown in fig. 7B. However, each of the second pads 32 is symmetrically disposed on two opposite sides of the first pad 31, and is equidistant from the first pad 31. Therefore, based on the embodiments disclosed in the present disclosure and the technical idea taught by the embodiments, those skilled in the art can change the design of the embodiments in their practical implementation, and all of them fall within the scope of the present disclosure. The present invention is illustrated in the foregoing paragraphs by way of examples, which are provided to better explain the main technical features of the invention and to enable those skilled in the art to understand and implement the invention, but the invention is not limited to these examples.
Therefore, in view of the above, it is apparent that the present invention discloses a chip structure with paramagnetic light emitting device and a method for manufacturing the same, wherein the substrate structure and material of the original crystal grain are improved to have better soft magnetism and initial permeability, so that the light emitting device itself can be used as a magnetic conductive structure, and the principle of magnetic array adsorption can be utilized to absorb the crystal grain structure of the light emitting diode with soft magnetism in a large amount at one time by combining with magnetic equipment, such as a tiny magnetic probe, to achieve the effect of fast and mass transfer, and meet the requirement of the current Micro LED for fast and mass transfer technology, thereby effectively improving the competitiveness of industrial production.
Meanwhile, an important effect of the present invention is to provide a natural magnetic inversion effect, based on that a certain magnetic difference exists between the epitaxial layer and the nickel-iron alloy layer in the light emitting device, and the magnetic difference forms the paramagnetism, the present invention enables each completed chip structure to achieve the function of automatic turning even if the direction is wrong when the chip structure is subsequently flip-chip bonded to the circuit board, so that the chip structure can automatically turn over and align and complete bonding to the circuit board, thereby realizing an optimal result of automatic alignment and automatic alignment design, and meeting the requirement of rapid mass transfer in industry. Through the concept of the invention, the invention also greatly saves the problems of additional alignment operation steps, time consumption, labor force and the like when the traditional flip chip bonding is adopted. It is thus obvious that the technical solution disclosed in the present invention has excellent industrial applicability and competitiveness. At the same time, it is verified that the technical features, the method means and the achieved efficacy of the present invention are significantly different from the current solutions, and are not easily accomplished by the skilled person in practice.
The above-mentioned embodiments are merely illustrative of the technical spirit and features of the present invention, and the object of the present invention is to enable those skilled in the art to understand the content of the present invention and to implement the same, and the scope of the present invention should not be limited by the above-mentioned embodiments, i.e. all equivalent changes and modifications made in the spirit of the present invention should be covered in the scope of the present invention.
Claims (19)
1. A manufacturing method of a chip structure with paramagnetic light-emitting components is suitable for flip chip bonding to a circuit board, and is characterized in that the manufacturing method comprises the following steps:
providing a first substrate and forming an epitaxial layer on the first substrate;
performing a first etching process to form at least two cavities in the epitaxial layer;
providing an insulating layer which is arranged on the epitaxial layer and fills the cavities;
at least one first welding pad and two second welding pads are arranged through the insulating layer, and each second welding pad is arranged in one cavity;
arranging a temporary substrate on the insulating layer, and removing the first substrate to enable the first welding pads and the second welding pads to be clamped between the epitaxial layer, the insulating layer and the temporary substrate;
bonding a magnetic metal structure on the top surface of the epitaxial layer, and removing the temporary substrate, wherein the magnetic metal structure has initial magnetic permeability;
performing a second etching process on the insulation layer and the epitaxial layer, wherein the second etching process is stopped at the top surface of the magnetic metal structure; and
starting from the top surface of the magnetic metal structure, a cutting process is performed to complete cutting the magnetic metal structure, thereby forming a chip structure with paramagnetic light-emitting elements.
2. The method of claim 1, further comprising: through a flip chip bonding process, the chip structure is automatically flipped over and aligned to complete the bonding to the circuit board.
3. The method of claim 1, wherein the magnetic metal structure comprises a nickel-iron alloy layer.
4. The method of claim 1, wherein the magnetic metal structure comprises a layer of nickel-iron alloy and a copper layer on the layer of nickel-iron alloy.
5. The method of claim 4, wherein the Ni-Fe alloy layer and the Cu layer are combined by cutting, vacuum heating, and polishing to obtain the magnetic metal structure with high thermal conductivity, low thermal expansion coefficient and initial magnetic permeability.
6. The method of claim 1, wherein said bonding the magnetic metal structure on the top surface of the epitaxial layer further comprises: and arranging a debonding layer between the epitaxial layer and the magnetic metal structure, so that the magnetic metal structure is bonded on the top surface of the epitaxial layer through the debonding layer.
7. The method of claim 6, wherein when the debonding layer is a debonding layer, the method further comprises: through a flip chip bonding process, the chip structure is automatically turned over and aligned and is bonded to a circuit board; and
raising the ambient temperature to over 100 ℃ to strip the pyrolytic glue layer to remove the magnetic metal structure.
8. The method of claim 6, wherein when the debonding layer is a cold debonding layer, the method further comprises: through a flip chip bonding process, the chip structure is automatically turned over and aligned and is bonded to a circuit board; and
reducing the ambient temperature to below-20 ℃, and peeling the cold-dissolving glue layer to remove the magnetic metal structure.
9. The method of claim 1, wherein the cutting process is a knife wheel cutting with a precision of 10 μm.
10. The method of claim 1, wherein each of the second pads is symmetrically disposed on opposite sides of the first pad.
11. The method of claim 1, wherein the first etching process is performed by a flat etching process.
12. The method of claim 1, wherein the second etching process is performed by a mesa etching.
13. A chip structure having a paramagnetic light emitting element, the chip structure having a paramagnetic light emitting element comprising:
a magnetic metal structure having an initial permeability;
an epitaxial layer arranged on the magnetic metal structure, wherein at least two cavities are formed in the epitaxial layer;
an insulating layer disposed on the epitaxial layer and filling the cavities; and
a plurality of bonding pads penetrating the insulating layer and connected with the epitaxial layer at the bottom of the insulating layer to provide electrical conduction for external signals, wherein the bonding pads comprise at least one first bonding pad and two second bonding pads, and each second bonding pad is arranged in one cavity.
14. The chip structure with paramagnetic light emitting device according to claim 13, wherein the chip structure with paramagnetic light emitting device is automatically flipped over and aligned by a flip chip bonding process, and the bonding pads are bonded to a circuit board to provide electrical conduction for external signals.
15. The chip structure with paramagnetic light emitting element according to claim 13, wherein each of the second pads is symmetrically disposed on two opposite sides of the first pad.
16. The chip structure with the paramagnetic light emitting element according to claim 13, further comprising a debonding layer disposed between the epitaxial layer and the magnetic metal structure, such that the magnetic metal structure is bonded to the epitaxial layer through the debonding layer.
17. The chip structure with paramagnetic light emitting element according to claim 13, wherein the magnetic metal structure comprises a layer of nickel-iron alloy.
18. The chip structure with paramagnetic light emitting device according to claim 13, wherein the magnetic metal structure comprises a layer of nife alloy and a copper layer on the layer of nife alloy.
19. The chip structure with paramagnetic light emitting element according to claim 18, wherein the ni-fe alloy layer and the cu are combined by cutting, vacuum heating and polishing, so that the magnetic metal structure has high thermal conductivity, low thermal expansion coefficient and initial permeability at the same time.
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|---|---|---|---|
| TW110100780 | 2021-01-08 | ||
| TW110100780A TWI778490B (en) | 2021-01-08 | 2021-01-08 | Chip structure with paramagnetic light-emitting element and its manufacturing method |
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| JP (1) | JP7102027B1 (en) |
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| US10804426B2 (en) * | 2014-10-31 | 2020-10-13 | ehux, Inc. | Planar surface mount micro-LED for fluidic assembly |
| US9607907B2 (en) * | 2014-12-01 | 2017-03-28 | Industrial Technology Research Institute | Electric-programmable magnetic module and picking-up and placement process for electronic devices |
| TW202046381A (en) * | 2019-06-14 | 2020-12-16 | 國立交通大學 | Method for transferring led chip and a led chip having magnetic substrate |
| JP2021125544A (en) * | 2020-02-05 | 2021-08-30 | アルディーテック株式会社 | Manufacturing method of semiconductor chip integrated device, semiconductor chip integrated device, and semiconductor chip integrated device assembly |
| TWM603199U (en) * | 2020-04-08 | 2020-10-21 | 台灣愛司帝科技股份有限公司 | Led chip structure and chip transferring system |
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- 2021-02-03 CN CN202110148459.6A patent/CN114744005A/en active Pending
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| JP7102027B1 (en) | 2022-07-19 |
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