CN114717645A - 加料管、加料方法和晶体生长设备 - Google Patents
加料管、加料方法和晶体生长设备 Download PDFInfo
- Publication number
- CN114717645A CN114717645A CN202210344847.6A CN202210344847A CN114717645A CN 114717645 A CN114717645 A CN 114717645A CN 202210344847 A CN202210344847 A CN 202210344847A CN 114717645 A CN114717645 A CN 114717645A
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- Prior art keywords
- feeding
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- crystal growth
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- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 177
- 230000002093 peripheral effect Effects 0.000 claims abstract description 13
- 238000000638 solvent extraction Methods 0.000 claims description 45
- 238000005192 partition Methods 0.000 claims description 28
- 230000007246 mechanism Effects 0.000 claims description 24
- 230000000903 blocking effect Effects 0.000 claims description 18
- 230000033001 locomotion Effects 0.000 claims description 17
- 238000002844 melting Methods 0.000 abstract description 9
- 230000008018 melting Effects 0.000 abstract description 9
- 239000002245 particle Substances 0.000 description 17
- 238000007599 discharging Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 8
- 235000014347 soups Nutrition 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (14)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210344847.6A CN114717645B (zh) | 2022-03-31 | 2022-03-31 | 加料管、加料方法和晶体生长设备 |
TW112111996A TWI854559B (zh) | 2022-03-31 | 2023-03-29 | 加料管、加料方法和晶體生長設備 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210344847.6A CN114717645B (zh) | 2022-03-31 | 2022-03-31 | 加料管、加料方法和晶体生长设备 |
Publications (2)
Publication Number | Publication Date |
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CN114717645A true CN114717645A (zh) | 2022-07-08 |
CN114717645B CN114717645B (zh) | 2023-08-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202210344847.6A Active CN114717645B (zh) | 2022-03-31 | 2022-03-31 | 加料管、加料方法和晶体生长设备 |
Country Status (1)
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CN (1) | CN114717645B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201089803Y (zh) * | 2007-06-13 | 2008-07-23 | 浙江昱辉阳光能源有限公司 | 一种应用于单晶炉的加料管 |
US20130220215A1 (en) * | 2010-02-22 | 2013-08-29 | Lev George Eidelman | Controlled gravity feeding czochralski apparatus with on the way melting raw material |
CN203212669U (zh) * | 2013-04-12 | 2013-09-25 | 英利能源(中国)有限公司 | 硅料添加装置的托盘和硅料添加装置 |
CN111977246A (zh) * | 2020-06-01 | 2020-11-24 | 徐州鑫晶半导体科技有限公司 | 用于加料装置的下料导管及其加工方法、加料装置 |
CN112210820A (zh) * | 2020-09-10 | 2021-01-12 | 徐州鑫晶半导体科技有限公司 | 晶体生产工艺 |
WO2021080094A1 (ko) * | 2019-10-22 | 2021-04-29 | 에스케이실트론 주식회사 | 원료 공급 유닛, 이를 포함하는 실리콘 단결정 잉곳의 성장 장치 및 원료 공급 방법 |
-
2022
- 2022-03-31 CN CN202210344847.6A patent/CN114717645B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201089803Y (zh) * | 2007-06-13 | 2008-07-23 | 浙江昱辉阳光能源有限公司 | 一种应用于单晶炉的加料管 |
US20130220215A1 (en) * | 2010-02-22 | 2013-08-29 | Lev George Eidelman | Controlled gravity feeding czochralski apparatus with on the way melting raw material |
CN203212669U (zh) * | 2013-04-12 | 2013-09-25 | 英利能源(中国)有限公司 | 硅料添加装置的托盘和硅料添加装置 |
WO2021080094A1 (ko) * | 2019-10-22 | 2021-04-29 | 에스케이실트론 주식회사 | 원료 공급 유닛, 이를 포함하는 실리콘 단결정 잉곳의 성장 장치 및 원료 공급 방법 |
CN111977246A (zh) * | 2020-06-01 | 2020-11-24 | 徐州鑫晶半导体科技有限公司 | 用于加料装置的下料导管及其加工方法、加料装置 |
CN112210820A (zh) * | 2020-09-10 | 2021-01-12 | 徐州鑫晶半导体科技有限公司 | 晶体生产工艺 |
Also Published As
Publication number | Publication date |
---|---|
TW202340548A (zh) | 2023-10-16 |
CN114717645B (zh) | 2023-08-18 |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230524 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Applicant after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |