CN114709594A - Circularly polarized terahertz radiation source and excitation method - Google Patents
Circularly polarized terahertz radiation source and excitation method Download PDFInfo
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- 230000008859 change Effects 0.000 claims description 9
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
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- 238000004519 manufacturing process Methods 0.000 claims description 4
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- 238000000206 photolithography Methods 0.000 claims description 3
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- 230000009467 reduction Effects 0.000 description 2
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- H—ELECTRICITY
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
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Abstract
The invention provides a circularly polarized terahertz radiation source and an excitation method, which comprise the following steps: a UTC-PD chip, a helical antenna and a dielectric lens; the UTC-PD chip is used for receiving beat frequencies of two beams of laser with different wavelengths and generating a terahertz signal; the spiral antenna is arranged on a spiral antenna substrate, the inner end of the spiral antenna is provided with three electrodes, the spiral antenna substrate is connected with the dielectric lens, the N-P-N electrodes of the UTC-PD chip are respectively connected with the three electrodes, the terahertz signal generated by the UTC-PD chip is transmitted to the spiral antenna through the three electrodes, and the spiral antenna radiates the terahertz signal generated by the UTC-PD chip to the dielectric lens; the dielectric lens converges and radiates a terahertz signal beam from the spiral antenna outward. The invention can realize the impedance matching between the UTC-PD chip and the helical antenna and realize the ultra-wideband, high-directivity and high-integration circularly polarized terahertz radiation.
Description
Technical Field
The invention relates to the technical field of single-row carrier light emitting diodes, in particular to a circularly polarized terahertz radiation source and an excitation method.
Background
Terahertz (THz) waves are favored by more and more researchers due to their unique properties and abundant spectrum resources. An efficient terahertz radiation source is a crucial point in terahertz technology. The terahertz source based on the optical heterodyne beat frequency has a large frequency adjustable range, and is easy to generate a high-frequency terahertz signal. The single-row Carrier Photodiode (UTC-PD) uses electrons as only effective carriers, has high response speed and high saturation current, and is widely used as an optical mixer to generate terahertz waves. The UTC-PD chip is manufactured in a single-chip integration mode, and the device structure is compact. The UTC-PD chip is integrated with the planar terahertz antenna, so that the loss of a transmission line can be reduced, continuously adjustable terahertz radiation is output in a very wide frequency band range, and a chip-level terahertz radiation source working at room temperature is realized.
At present, butterfly antennas and log periodic antennas are common planar antennas integrated with a UTC-PD chip. The butterfly antenna and the UTC-PD chip are most widely integrated and easy to process, the impedance of the butterfly antenna has smaller fluctuation relative to a log-periodic antenna when changing along with frequency, but the butterfly antenna is difficult to maintain good matching performance in a wide frequency band, the working frequency band range is narrow, and the butterfly antenna cannot meet the increasing requirements; log periodic antennas have good gain but the impedance fluctuates greatly with frequency. And the two antennas are linearly polarized antennas, which greatly limits the application development. The UTC-PD thz source of the integrated antenna reported at present can read out thz response in a wider frequency range, but the radiation power is generally not high, and one reason is that the UTC-PD has impedance mismatch with the integrated antenna, and the coupling efficiency of energy is low.
Therefore, how to use a new form of antenna and optimize the integrated structure to achieve good matching between the on-chip antenna and the UTC-PD in a very wide bandwidth, improve the bandwidth and the radiation power of the device and widen the application range of the device is a problem to be solved urgently.
Disclosure of Invention
In view of the problems in the prior art, an object of the present invention is to provide a circularly polarized terahertz radiation source and an excitation method thereof, so as to obviate or mitigate one or more of the drawbacks in the prior art.
One aspect of the present invention provides a circularly polarized terahertz radiation source, comprising: a UTC-PD chip, a helical antenna and a dielectric lens; the UTC-PD chip is used for receiving beat frequencies of two beams of laser with different wavelengths and generating a terahertz signal; the spiral antenna is arranged on a spiral antenna substrate, the inner end of the spiral antenna is provided with three electrodes, the spiral antenna substrate is connected with the dielectric lens, the N-P-N electrodes of the UTC-PD chip are respectively connected with the three electrodes, the terahertz signal generated by the UTC-PD chip is transmitted to the spiral antenna through the three electrodes, and the spiral antenna radiates the terahertz signal generated by the UTC-PD chip to the dielectric lens; the dielectric lens converges and radiates a terahertz signal beam from the spiral antenna outward.
In some embodiments of the present invention, the UTC-PD chip further includes a passive optical waveguide from which the beat frequencies of the two laser lights having different wavelengths are input.
In some embodiments of the present invention, the spiral antenna is a planar equiangular spiral antenna, a smooth gradual change structure is formed at a portion where the N-P-N electrodes of the UTC-PD chip are respectively connected to three electrodes of the planar equiangular spiral antenna, and a gradual change reduction is performed on a spiral line of the planar equiangular spiral antenna to make a smooth transition to an electrode structure.
In some embodiments of the present invention, the helical antenna comprises two arms, and the three electrodes of the helical antenna are N-P-N electrodes, two N electrodes on one arm of the helical antenna and one P electrode on the other arm of the helical antenna.
In some embodiments of the present invention, a pad is led out from each of the two arms of the spiral antenna through the high impedance strip line for applying a dc bias.
In some embodiments of the present invention, the helical antenna substrate is an indium phosphide InP substrate.
In some embodiments of the invention, the size of the middle electrode of the metal electrodes of the helical antenna is any one of 3 μm by 15 μm or 3 μm by 25 μm or 3 μm by 50 μm.
In some embodiments of the invention, the dielectric lens is a high-resistance silicon lens.
In some embodiments of the present invention, the UTC-PD chip is integrated with the helical antenna by photolithography during manufacturing.
Another aspect of the present invention provides an excitation method based on the above circularly polarized terahertz radiation source, including: the UTC-PD chip receives beat frequencies of two beams of laser with different wavelengths and generates a terahertz signal; the terahertz signal generated by the UTC-PD chip is transmitted to the spiral antenna through the three electrodes so as to be radiated to the dielectric lens by the spiral antenna; the dielectric lens converges and radiates a terahertz signal beam from the spiral antenna outward.
The circularly polarized terahertz radiation source uses the spiral antenna subjected to smooth gradual change processing, and the on-chip antenna and the UTC-PD can achieve good matching in a very wide bandwidth by optimizing an integrated structure, so that the bandwidth and the radiation power of the device are improved, and the application range of the device is widened. The invention can realize the impedance matching between the UTC-PD chip and the helical antenna and realize the ultra-wideband, high-directivity and high-integration circularly polarized terahertz radiation.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
It will be appreciated by those skilled in the art that the objects and advantages that can be achieved with the present invention are not limited to the specific details set forth above, and that these and other objects that can be achieved with the present invention will be more clearly understood from the detailed description that follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. For purposes of illustrating and describing some portions of the present invention, corresponding parts of the drawings may be exaggerated, i.e., may be larger, relative to other components in an exemplary apparatus actually manufactured according to the present invention. In the drawings:
fig. 1 is a schematic view of an integrated circularly polarized terahertz radiation source according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a UTC-PD chip according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a planar equiangular helical antenna according to an embodiment of the present invention.
Fig. 4 is a structural diagram of the innermost end of the planar equiangular helical antenna according to an embodiment of the present invention.
FIG. 5 is a diagram illustrating an integration process according to an embodiment of the present invention.
Fig. 6 is a reflection coefficient curve of a circularly polarized terahertz radiation source according to an integrated design of the present invention.
Fig. 7 is a line graph illustrating gain and radiation efficiency of a circularly polarized terahertz radiation source according to an embodiment of the present invention.
Fig. 8a is an E-plane directional diagram of a circularly polarized terahertz radiation source according to an integrated design of the present invention.
Fig. 8b is an H-plane directional diagram of a circularly polarized terahertz radiation source according to an integrated design of the present invention.
Fig. 9 is an axial ratio graph of a circularly polarized terahertz radiation source integrally designed according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings. The exemplary embodiments and descriptions of the present invention are provided to explain the present invention, but not to limit the present invention.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, elements, steps or components, but does not preclude the presence or addition of one or more other features, elements, steps or components.
It is also noted herein that the term "coupled," if not specifically stated, may refer herein to not only a direct connection, but also an indirect connection in which an intermediate is present.
Fig. 1 is a schematic diagram of an integrally designed circularly polarized terahertz radiation source according to an embodiment of the present invention, which includes a helical antenna 100, a UTC-PD chip 200, and a dielectric lens 300. It should be noted that the UTC-PD chip is located below the helical antenna, but since the size of the UTC-PD chip is much smaller than that of the helical antenna, it is not obvious that the UTC-PD chip is located, and the structure and connection relationship thereof will be described in detail below.
FIG. 5 is a schematic diagram of an integration process according to an embodiment of the invention. The UTC-PD chip is integrated on the spiral antenna, the integration process is an ultra-wideband terahertz antenna on-chip integration design, and then the dielectric lens is integrated on the antenna. In the embodiment of the invention, the spiral antenna is arranged on the spiral antenna substrate, the inner end of the spiral antenna is provided with three electrodes, the spiral antenna substrate is connected with the dielectric lens, and the N-P-N electrodes of the UTC-PD chip are respectively connected with the three electrodes at the inner end of the spiral antenna. The UTC-PD chip is used for receiving beat frequencies of two beams of laser with different wavelengths and generating a terahertz signal. The terahertz signal generated by the UTC-PD chip is transmitted to the spiral antenna through three electrodes of the spiral antenna so as to be radiated to the dielectric lens by the spiral antenna. The antenna substrate is placed on a dielectric lens, and the dielectric lens converges and radiates a terahertz signal beam from the helical antenna outward.
Fig. 2 is a schematic structural diagram of a UTC-PD chip according to an embodiment of the present invention, where the electrodes of the UTC-PD chip are N-P-N electrodes, and include an N electrode 210, a P electrode 220, and another N electrode 230. The UTC-PD chip further includes a passive optical waveguide, and the beat frequencies of two laser beams with different wavelengths are input from the passive optical waveguide 240, and are used to excite the circularly polarized terahertz radiation source of the present invention. The design output of the chip is in a GSG (Ground-Signal-Ground) form, so that the subsequent integration is facilitated.
Fig. 3 is a structural diagram of a planar equiangular helical antenna of an embodiment of the present invention, which is a self-complementary structure, and is a typical non-frequency-varying antenna with ultra-wideband characteristics and generally circular polarization characteristics. The helical antenna comprises a radial arm 130 and a radial arm 140, and three electrodes of the helical antenna are N-P-N electrodes, two N electrodes on one radial arm 130 of the helical antenna and one P electrode on the other radial arm 140 of the helical antenna. The two arms of the helical antenna are located on the helical antenna substrate 150.
In the embodiment of the invention, the two arms of the spiral antenna are respectively led out with a welding disc through the high-resistance strip line for applying direct current bias.
Fig. 4 is a structural diagram of the innermost end of the planar equiangular helical antenna, that is, an enlarged structural diagram of the structure 160 marked in fig. 3, according to an embodiment of the present invention, the structure of the innermost end of the equiangular helical antenna is modified and designed to be the same as the UTC-PD electrode, and the structures 151, 152 and 153 in fig. 4 correspond to the electrodes 210, 220 and 230 shown in fig. 2. This destroys the inherent complementary structure of the helical antenna, and the innermost helical structure corresponds to the high-frequency part of the antenna, which deteriorates the impedance matching of the high-frequency part of the antenna. The radius of the conventional equiangular helical antenna is exponentially increased, and the spiral has a fixed helix rate, so that the internal helical structure cannot be independently changed. In order to solve the problem of poor impedance matching, the connection part of the spiral antenna and the electrode is gradually changed from sharp to smooth and is symmetrical as much as possible. Through the gradual change smooth design, the contradiction between the design of the N-P-N electrode and the design of the spiral antenna is adjusted, so that the spiral antenna and the UTC-PD realize impedance matching, the antenna on the ultra-wideband chip can work at 0.15-1.5THz, and simultaneously has a circular polarization characteristic, which is absent in the integrated design of other UTC-PD chips, and the application prospect of the whole chip module is directly expanded. The N electrode 151 and the other N electrode 153 are located on the radial arm 130 of the helical antenna, and the P electrode 152 is located on the other radial arm 140 of the helical antenna. The maximum distance between the radial arms 130 and 140 is D, which is 687.92 μm in this embodiment of the present invention.
In an embodiment of the present invention, the size of the P-electrode 152, i.e. the middle electrode of the metal electrode of the helical antenna, is any one of 3 μm by 15 μm or 3 μm by 25 μm or 3 μm by 50 μm. The optimized design of the electrode distance can enable the impedance of the antenna to be matched with the UTC-PD. The intermediate electrode size is merely an example, and the present invention is not limited thereto.
In an embodiment of the invention, the spiral antenna is a planar equiangular spiral antenna, the parts of the N-P-N electrodes of the UTC-PD chip, which are respectively connected with the three electrodes of the planar equiangular spiral antenna, are of a smooth gradual change structure, the spiral line of the planar equiangular spiral antenna is gradually reduced, the spiral line is smoothly transited to the electrode structure, and the structure is symmetrical as much as possible. As shown in fig. 4, with such a round and gradual change structure, impedance matching of the UTC-PD chip and the planar equiangular helical antenna can be achieved.
In the embodiment of the invention, the two arms of the spiral antenna are respectively led out with a welding disc through the high-resistance strip line for applying direct current bias. The UTC-PD is applied with a reverse bias voltage, so that the movement of carriers can be accelerated, and the working performance of the UTC-PD is improved. Meanwhile, the UTC-PD can also work under zero bias, so that the hardware performance of the UTC-PD chip is brought into full play.
The dielectric lens 300 is integrated to eliminate the surface wave effect existing in the operation of the circularly polarized terahertz radiation source. After the UTC-PD chip is integrated with the spiral antenna, because the working frequency of the terahertz antenna is high, when the terahertz antenna is placed on a medium, a surface wave effect exists, and the radiation power is reduced. Aiming at the problem, the integrated design of the lens antenna is carried out, the dielectric lens can play a role in bunching radiation, the radiation directivity and the gain of the antenna can be increased, and the surface wave can be effectively eliminated.
In the embodiment of the present invention, the spiral antenna substrate 150 is an InP substrate. The material of the helical antenna substrate is only an example, and the invention is not limited thereto, mainly because indium phosphide has the advantages of high electron peak drift velocity, high forbidden bandwidth, high thermal conductivity and the like.
In the embodiment of the present invention, the dielectric lens 300 is a high-resistance silicon lens, the dielectric constant of the silicon lens is close to that of the spiral antenna substrate 150, and the antenna tends to radiate most of its power to the dielectric surface, so as to effectively eliminate the surface wave effect, improve the reflection coefficient and radiation directivity of the antenna, and avoid the reduction of radiation power.
Fig. 6 is a reflection coefficient curve of a circularly polarized terahertz radiation source according to an integrated design of the present invention. The reflection coefficient is below-10 dB when the THz is between 0.15 and 1.5, which shows that good impedance matching effect is realized after the lens antenna is integrally designed.
Fig. 7 is a line graph of gain and radiation efficiency of a circularly polarized terahertz radiation source integrally designed according to an embodiment of the present invention, where the highest gain reaches 21.05dBi at 1THz, the radiation efficiency gradually decreases with increasing frequency, and reaches the maximum at 1THz, which indicates that the embodiment of the present invention has good signal gain and radiation efficiency.
Fig. 8a is an E-plane directional diagram of the circularly polarized terahertz radiation source integrally designed according to an embodiment of the present invention, fig. 8b is an H-plane directional diagram of the circularly polarized terahertz radiation source integrally designed according to an embodiment of the present invention, where the E-plane and the H-plane respectively refer to planes that form an angle Phi with respect to a horizontal plane in a spherical coordinate system, Phi is 0 as the E-plane, Phi is 90 ° as the H-plane, different lines indicate far-field gain effects at different frequencies, the gain is highest at 180 °, the beam focusing effect of the lens is obvious, meanwhile, the main lobe gain is continuously increased at 0.2 to 0.8THz, the maximum value of 20.2dBi is reached at 0.8THz (Phi is 0), and the gain is gradually decreased at 0.8 to 1.5 THz. The strong directivity of the circularly polarized terahertz radiation source is shown. The lens here not only acts as a converging beam, but rather acts as a dielectric resonator to improve the overall integrated radiation characteristics.
Fig. 9 is an axial ratio graph of a circularly polarized terahertz radiation source integrally designed according to an embodiment of the present invention. The axial ratio of the terahertz radiation source in the embodiment of the invention at the position of 0.2-0.7THz is less than 3dB, which shows that the terahertz radiation source has circular polarization characteristics.
In the embodiment of the present invention, the UTC-PD chip 200 is integrated with the helical antenna 100 by photolithography during the manufacturing process. The above integration process is an integrated design on an ultra-wideband terahertz antenna chip, and it should be noted that the integrated design on the ultra-wideband terahertz antenna chip is to directly integrate the helical antenna and the UTC-PD in the GSG form (without connecting them together at a later stage), that is, the helical antenna is directly manufactured in the process of manufacturing the UTC-PD chip, and an electrode inside the helical antenna and the chip are additionally designed when the helical antenna and the chip are integrated, such as the smooth gradual change design shown in fig. 4, and the structure is as symmetrical as possible. The integrated design of the lens antenna also integrates the chip, the spiral antenna and the lens together by adopting the same method, thereby realizing high-gain output.
Aiming at the circularly polarized terahertz radiation source, the invention also provides an excitation method, which comprises the following steps:
step 1: the UTC-PD chip receives beat frequencies of two beams of laser with different wavelengths and generates a terahertz signal;
step 2: the terahertz signal generated by the UTC-PD chip is transmitted to the spiral antenna through the three electrodes so as to be radiated to the dielectric lens by the spiral antenna;
and step 3: the dielectric lens converges and radiates a terahertz signal beam from the spiral antenna outward.
In summary, the invention provides an equiangular spiral antenna integrated with a UTC-PD chip, and the gain of the antenna is improved by using a high-resistance silicon lens. The integrated antenna is in an ultra-wide working frequency band of 0.15-1.5THz, the reflection coefficient is kept below-10 dB, the gain of the antenna can reach up to 21.05dBi, and the integrated antenna has a circular polarization characteristic in 0.2-0.7 THz. Compared with the existing UTC-PD integrated antenna, the ultra-wideband terahertz source has the advantages that the planar equiangular spiral antenna with the ultra-wideband characteristic is used, the transition structure of the planar equiangular spiral antenna and the N-P-N electrode is optimized, the impedance of the ultra-wideband antenna and the impedance of the UTC-PD are matched in the ultra-wideband range, the ultra-wideband terahertz source has the characteristics of ultra-wideband and high directivity, and meanwhile, the ultra-wideband terahertz source has the circular polarization characteristic, and the application range of the terahertz source based on the UTC-PD integrated antenna is enlarged. In addition, the terahertz radiation source is integrated integrally and has the characteristic of high integration level.
It is to be understood that the invention is not limited to the specific arrangements and instrumentality described above and shown in the drawings. A detailed description of known methods is omitted herein for the sake of brevity. In the above embodiments, several specific steps are described and shown as examples. However, the method processes of the present invention are not limited to the specific steps described and illustrated, and those skilled in the art can make various changes, modifications and additions or change the order between the steps after comprehending the spirit of the present invention.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments and/or in combination with or instead of the features of the other embodiments in the present invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made to the embodiment of the present invention by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A circularly polarized terahertz radiation source is characterized by comprising a UTC-PD chip, a spiral antenna and a dielectric lens;
the UTC-PD chip is used for receiving beat frequencies of two beams of laser with different wavelengths and generating a terahertz signal;
the spiral antenna is arranged on a spiral antenna substrate, the inner end of the spiral antenna is provided with three electrodes, the spiral antenna substrate is connected with the dielectric lens, the N-P-N electrodes of the UTC-PD chip are respectively connected with the three electrodes, the terahertz signal generated by the UTC-PD chip is transmitted to the spiral antenna through the three electrodes, and the spiral antenna radiates the terahertz signal generated by the UTC-PD chip to the dielectric lens;
the dielectric lens converges and radiates a terahertz signal beam from the spiral antenna outward.
2. The circularly polarized terahertz radiation source of claim 1, wherein the UTC-PD chip further comprises a passive optical waveguide from which the beat frequencies of the two laser lights with different wavelengths are input.
3. The circularly polarized terahertz radiation source according to claim 1, wherein the spiral antenna is a planar equiangular spiral antenna, and a smooth gradual change structure is formed at a part where the N-P-N electrodes of the UTC-PD chip are respectively connected with three electrodes of the planar equiangular spiral antenna, so that the spiral line of the planar equiangular spiral antenna is gradually reduced and smoothly transits to the electrode structure.
4. The circularly polarized terahertz radiation source of claim 1, wherein the spiral antenna comprises two arms, and the three electrodes of the spiral antenna are N-P-N electrodes, two N electrodes being on one arm of the spiral antenna and one P electrode being on the other arm of the spiral antenna.
5. The circularly polarized terahertz radiation source of claim 4, wherein a bonding pad is respectively led out from the two arms of the spiral antenna through high-resistance strip lines for applying a direct current bias.
6. The circularly polarized terahertz radiation source of claim 1, wherein the spiral antenna substrate is an indium phosphide (InP) substrate.
7. The circularly polarized terahertz radiation source of claim 5, wherein the size of the middle electrode of the metal electrodes of the helical antenna is any one of 3 μm by 15 μm or 3 μm by 25 μm or 3 μm by 50 μm.
8. The circularly polarized terahertz radiation source of claim 1, wherein the dielectric lens is a high-resistance silicon lens.
9. The circularly polarized terahertz radiation source of claim 1, wherein the UTC-PD chip is integrated with the spiral antenna by photolithography during manufacturing.
10. A method of excitation of the circularly polarized terahertz radiation source according to any one of claims 1 to 9, comprising:
the UTC-PD chip receives beat frequencies of two beams of laser with different wavelengths and generates a terahertz signal;
the terahertz signal generated by the UTC-PD chip is transmitted to the spiral antenna through the three electrodes so as to be radiated to the dielectric lens by the spiral antenna;
the dielectric lens converges and radiates a terahertz signal beam from the spiral antenna outward.
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| WO2024138825A1 (en) * | 2022-12-30 | 2024-07-04 | 之江实验室 | Integrated antenna and antenna apparatus |
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