CN113823888B - Double-frequency matching and second harmonic terahertz frequency mixer based on high-temperature superconducting technology - Google Patents
Double-frequency matching and second harmonic terahertz frequency mixer based on high-temperature superconducting technology Download PDFInfo
- Publication number
- CN113823888B CN113823888B CN202111127833.0A CN202111127833A CN113823888B CN 113823888 B CN113823888 B CN 113823888B CN 202111127833 A CN202111127833 A CN 202111127833A CN 113823888 B CN113823888 B CN 113823888B
- Authority
- CN
- China
- Prior art keywords
- frequency
- harmonic
- temperature superconducting
- slot antenna
- terahertz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
The invention relates to a double-frequency matching and second harmonic terahertz frequency mixer based on a high-temperature superconducting technology, and belongs to the technical field of high-temperature superconductivity and harmonic frequency mixers. The terahertz frequency mixer comprises a film, a dielectric substrate, a slot antenna and a lens; the film grows at one end of the medium substrate, and the lens is arranged at the other end of the medium substrate; the length and width of the film are generally 1-2 times larger than those of the slot antenna; the material of the medium substrate is MgO, the length and width of the MgO are consistent with those of the film, and the thickness of the MgO ranges from 200 to 1000 mu m; a slot antenna consists of a series of slots in a film. The terahertz frequency mixer has the advantages of low noise and low local oscillator power; under the condition of not influencing radio frequency and local oscillator signals, the intermediate frequency signals after frequency conversion are led out, and the method is simple and practical; the method has a very great application prospect in the field of terahertz communication; higher harmonics, active and passive mixing of fundamental waves may also be performed.
Description
Technical Field
The invention relates to a double-frequency matching and second harmonic terahertz frequency mixer based on a high-temperature superconducting technology, and belongs to the technical field of high-temperature superconductivity and harmonic frequency mixers.
Background
When designing a mixer based on high-temperature superconductivity, fundamental wave mixing or higher harmonic mixing is generally adopted. The research on high-temperature superconducting mixers at home and abroad is less. On one hand, because the frequency dividing ratio required by the second harmonic mixer is the lowest, the difficulty of realizing high directional diagram gain of radio frequency and local oscillator is higher; on the other hand, the impedance of the Josephson junction based on high-temperature superconductivity is about 5 ohms, and the difficulty of simultaneously completing impedance matching by radio frequency and a local oscillator is high. Therefore, in the technical field of high-temperature superconducting mixers, no second harmonic mixer is designed at present.
Compared with the conventional semiconductor terahertz frequency mixer, the terahertz frequency mixer based on the high-temperature superconducting technology has the advantages of low noise and low local oscillator power. In harmonic mixing, the conversion loss of second harmonic mixing is minimal, since the energy of the second harmonic is the largest among the harmonics. Compared with fundamental wave mixing based on a high-temperature superconducting technology, harmonic mixing can replace a beam splitter with a frequency selective surface, so that loss and performance deterioration caused by radio frequency coupling are avoided, local oscillation signals completely penetrate through the frequency selective surface, radio frequency signals are completely reflected by the frequency selective surface, ideal combining is realized, the local oscillation signals and the radio frequency signals are coupled into a mixer together, and signal coupling loss is greatly reduced. Especially for signals in the terahertz frequency band, the frequency conversion loss and the coupling loss of the receiving mixer have great influence on the noise and the sensitivity of the terahertz signals due to the fact that high-frequency signals are attenuated quickly. Therefore, a double-frequency matching and second harmonic terahertz mixer based on a high-temperature superconducting technology is urgently needed to be designed.
Disclosure of Invention
The invention aims to solve the problems that the existing terahertz frequency mixer has high frequency band and large space attenuation, so that the terahertz frequency mixer is suitable for a frequency mixer; the low noise temperature and the low frequency conversion loss are very important, in order to further reduce the noise temperature and the frequency conversion loss, a high-temperature superconducting technology is adopted to design a frequency mixer, and meanwhile, a frequency selective surface can be used for replacing a beam splitter in second harmonic frequency mixing, so that loss and performance deterioration caused by radio frequency coupling are avoided, and the double-frequency matching and second harmonic terahertz frequency mixer based on the high-temperature superconducting technology is provided.
In order to achieve the purpose, the invention adopts the following technical scheme.
The high-temperature superconducting double-frequency matching and second harmonic terahertz frequency mixer comprises a film, a dielectric substrate, a slot antenna and a lens;
wherein, the film grows on one end of the medium substrate, the lens is arranged on the other end of the medium substrate; the length and width of the film are generally 1-2 times larger than those of the slot antenna; the material of the medium substrate is MgO, the length and width of the MgO are consistent with those of the film, and the thickness of the MgO ranges from 200 to 1000 mu m; the slot antenna is composed of a series of slots on a film;
the design process of the slot antenna comprises the following steps:
the length of the quarter-wavelength high-low impedance line is one quarter of the wavelength of the received terahertz signal, and the width of a gap of the quarter-wavelength high-low impedance line and the width of metal between the gaps are determined by the impedance value of the quarter-wavelength high-low impedance line; the value range of X is 5 to 15 ohms;
wherein, the larger in the intermediate frequency signal means more than-3 dB;
the working principle of the double-frequency matching and second harmonic terahertz frequency mixer based on the high-temperature superconducting technology is as follows:
the LO local oscillation signal and the received signal can properly reach a lens by adjusting the angles of a reflector and a frequency selection surface, reach a medium substrate through the lens and improve the signal gain, then further improve the signal gain through a log-periodic slot antenna, and finally transmit the signal to a high-temperature superconducting Josephson junction through a quarter-wavelength high-low impedance line for second harmonic mixing, wherein the mixing principle is as follows (1):
fo＝fi±2fL (1)
wherein f isoTo the frequency of the output intermediate frequency signal, fiFor the input frequency of the terahertz radio frequency signal, fLIs the frequency of the local oscillator signal.
Mixing to generate intermediate frequency signal foAnd the signal is transmitted to an intermediate frequency output port through the symmetric gap oscillator at the outermost periphery and the CPW coplanar waveguide to output an intermediate frequency signal.
Advantageous effects
Compared with the prior art, the double-frequency matching and second harmonic terahertz frequency mixer based on the high-temperature superconducting technology has the following beneficial effects:
1. compared with the conventional semiconductor terahertz frequency mixer, the terahertz frequency mixer based on the high-temperature superconducting technology has the advantages of low noise and low local oscillator power;
2. in harmonic mixing, the frequency conversion loss of second harmonic mixing is minimum because the energy of the second harmonic in the harmonic is maximum; compared with fundamental wave mixing based on a high-temperature superconducting technology, harmonic mixing can replace a beam splitter with a frequency selective surface, so that loss and performance deterioration caused by radio frequency coupling are avoided, local oscillation signals completely penetrate through the frequency selective surface, radio frequency signals are completely reflected by the frequency selective surface, ideal combining is realized, and the local oscillation signals and the radio frequency signals are coupled into a mixer together, so that signal coupling loss is greatly reduced; especially for signals in a terahertz frequency band, the frequency conversion loss and the coupling loss of the receiving mixer have great influence on the noise and the sensitivity of the terahertz signals due to the fact that high-frequency signals are attenuated quickly; therefore, the terahertz wave detector has a very wide application prospect in the field of terahertz communication;
3. the second harmonic mixer can also perform active and passive mixing of higher harmonics and fundamental waves.
Drawings
FIG. 1 is a general design diagram of a dual-frequency matching, second harmonic terahertz mixer based on high-temperature superconducting technology;
FIG. 2 is a diagram of a design of a log periodic slot antenna;
FIG. 3 is a dual frequency impedance matching scheme;
FIG. 4 is a design diagram of a symmetric slot oscillator and a CPW coplanar waveguide;
FIG. 5 is a functional usage layout;
fig. 6 is a plot of the S11 parameters for a log periodic slot antenna;
FIG. 7 is a graph of the imaginary input impedance of a log periodic slot antenna;
FIG. 8 is a graph of the real input impedance of a log periodic slot antenna;
FIG. 9 is a graph of the real part of the input impedance after the dual-frequency impedance matching optimization;
FIG. 10 is a diagram of the imaginary part of the input impedance after the dual frequency impedance matching optimization;
fig. 11 is a graph of S11 parameters after optimization of dual frequency impedance matching;
FIG. 12 is a graph of the surface current distribution after the symmetrical slot dipole and CPW coplanar waveguide are added;
FIG. 13 is a graph of the real part of the input impedance after the symmetrical slot dipole and CPW coplanar waveguide are added;
FIG. 14 is a diagram of the imaginary part of the input impedance after adding the symmetric slot dipole and CPW coplanar waveguide;
FIG. 15 is a diagram of S11 parameters after the addition of a symmetric slot element and CPW coplanar waveguide;
FIG. 16 is a S21 parameter diagram after the addition of a symmetric slot element and CPW coplanar waveguide;
FIG. 17 is a graph of radiation efficiency after the addition of a lens;
FIG. 18 is a view of the parameter S11 after the addition of a lens;
FIG. 19 is a graph of the imaginary part of the input impedance after addition of the lens;
FIG. 20 is a graph of the real part of the input impedance after addition of a lens;
FIG. 21 is the pattern of the 220GHz signal after the addition of the lens in the YOZ plane;
FIG. 22 is the diagram of the XOZ plane of the 220GHz signal after the addition of the lens;
FIG. 23 shows the pattern of the 210GHz signal after the addition of the lens in the XOZ plane;
FIG. 24 is the pattern of the 210GHz signal after the addition of the lens in the YOZ plane;
FIG. 25 is the diagram of the 230GHz signal after the lens is added on the XOZ plane;
FIG. 26 is the diagram of the 230GHz signal after the addition of the lens in the YOZ plane;
FIG. 27 is the diagram of the 105GHz signal after the lens is added in the XOZ plane;
FIG. 28 is the pattern of the 105GHz signal after the addition of the lens in the YOZ plane;
FIG. 29 is the diagram of the XOZ plane of the 100GHz signal after the addition of the lens;
FIG. 30 shows the pattern of the 100GHz signal after the addition of the lens in the YOZ plane;
FIG. 31 is the pattern of the 110GHz signal after the addition of the lens in the YOZ plane;
FIG. 32 is the diagram of the 110GHz signal after the addition of the lens in the YOZ plane;
illustration of the drawings:
1-film, 2-dielectric substrate, 3-slot antenna, 4-lens; 5-logarithmic period slot antenna, 6-excitation; 7-high temperature superconducting josephson junction, 8-quarter wavelength impedance line; 9-intermediate frequency output port, 10-symmetrical gap oscillator; 11-frequency selective surface, 12-mirror.
Detailed Description
The feasibility of the dual-frequency matching and second harmonic terahertz mixer based on the high-temperature superconducting technology is further explained and described in detail below with reference to the accompanying drawings and embodiments.
Example 1
The double-frequency matching and second harmonic terahertz frequency mixer based on the high-temperature superconducting technology is designed in the embodiment and is shown in figure 1; during specific implementation, the sizes and the periodicity of related oscillators are adjusted by skillfully designing a log-periodic slot antenna 5 (shown in figure 2) on a film 1 epitaxially grown on a dielectric substrate 2, so that the reflection parameter S11 of a certain two frequency points is a minimum value point, the imaginary parts of impedance are about 0 ohm, and the real parts of the impedance are the minimum value points; and then, the impedance of two frequency points is optimized to about 5-15 ohms simultaneously through the impedance matching optimization design (shown in figure 3), so that the second harmonic mixing of the high-temperature superconducting Josephson junction 7 can be realized, and the frequency conversion loss of the second harmonic mixing is minimum in the harmonic mixing because the energy of the second harmonic in the harmonic is maximum.
Compared with fundamental wave mixing based on a high-temperature superconducting technology, the harmonic mixing can replace a beam splitter with a frequency selective surface, so that loss and performance deterioration caused by radio frequency coupling are avoided, local oscillation signals completely penetrate through the surface of the frequency selective surface, radio frequency signals are completely reflected by the frequency selective surface, ideal combining is realized, the local oscillation signals and the radio frequency signals are coupled into a mixer together, and signal coupling loss is greatly reduced.
Then, by utilizing the characteristic that the periphery of the log periodic slot antenna 5 basically has no high-frequency current, and adopting a CPW (coplanar waveguide) technology, as shown in fig. 4, a symmetrical oscillator is additionally arranged on the outermost layer of the log periodic slot antenna and is smoothly led out to the edge of a film (the field of the original antenna is not influenced as much as possible), so that the intermediate-frequency signal after frequency conversion can be led out under the condition of not influencing radio frequency and local oscillation signals, and the method is simple and practical; and finally, receiving and local oscillation signals by adopting a hemispherical lens, converging the plane waves into spherical waves, further improving the signal gain through a lens 4, enabling the signals to be transmitted to the slot antenna 3, finishing second harmonic mixing at a high-temperature superconducting Josephson junction 7 of the slot antenna 3, and transmitting the obtained intermediate frequency signals to an intermediate frequency output port 9 through the CPW of the slot antenna 3 for output.
In addition, the mixer can also perform active and passive mixing of higher harmonics and fundamental waves.
Compared with fundamental wave mixing based on a high-temperature superconducting technology, harmonic mixing can replace a beam splitter with the frequency selection surface 11, so that loss and performance deterioration caused by radio frequency coupling are avoided, local oscillation signals completely penetrate through the frequency selection surface 11, radio frequency signals are completely reflected by the frequency selection surface 11, ideal combining is achieved, the local oscillation signals and the radio frequency signals are coupled into a mixer, signal coupling loss is greatly reduced, and a function use layout is shown in fig. 5. The technical indexes are as follows:
center frequency of received signal: 220 GHz; received signal bandwidth (-3 dB): not less than 20 GHz; local oscillator signal center frequency: 105 GHz; local oscillator signal bandwidth (-3 dB): not less than 10 GHz; center frequency of intermediate frequency signal: 10 GHz; intermediate frequency signal bandwidth (-3 dB): not less than 20 GHz. Design of film 1:
according to the fact that the length and the width of the film 1 are generally 1-2 times larger than those of the slot antenna 3, the length and the width of the film 1 designed in the current time are all 6mm in consideration of certain redundancy.
(1) Design method of the dielectric substrate 2:
the dielectric substrate 2 of this embodiment is made of MgO, the length and width dimensions of which are consistent with those of the thin film 1, and the thickness of which is 500 μm.
(2) Design method of slot antenna 2:
(a) in the case of the scheme, a log periodic slot antenna 5 is selected, then simulation optimization is carried out through CST software, excitation 6 is used for feeding of the antenna, the length and the period rate of the longest slot element are adjusted, as shown in fig. 6, 7 and 8, reflection parameters S11 of the antenna near 105GHz and 220GHz are minimum value points which are-3.7 dB and-4.2 dB respectively, imaginary parts of impedance are about 0 ohm respectively, and the same real parts are the minimum value points which are 21.1 ohm and 23.32 ohm respectively.
(b) In this embodiment, the quarter-wavelength high-low impedance line 8 is adopted, and as can be seen from fig. 7 and 8, the input impedance is about 21 ohms when the quarter-wavelength high-low impedance line 8 is not additionally arranged, so that the characteristic impedance Z of the quarter-wavelength high-low impedance line 8 is made to be equal to or lower than 21 ohms1The input impedance Z is 59.78 ohms after adding the quarter-wave high-low impedance line 8i2169.37 ohms.
Similarly, a quarter-wavelength high-low impedance line 8 with characteristic impedance of 41.59 ohms is added, and after calculation, the input impedance of 10.05 ohms at the high-temperature superconducting josephson junction 7 is obtained. For non-linear mixing.
As can be seen from the simulation results of fig. 9 and 10, after the dual-frequency impedance matching optimization is performed, at 105GHz and 220GHz, the imaginary parts of the input impedance at the high-temperature superconducting josephson junction 7 are both near 0 ohm, and the real parts are both reduced to about 10 ohm, which is consistent with the above theoretical analysis. Meanwhile, as can be seen from fig. 11, at 105GHz and 220GHz, the reflection parameters at the high-temperature superconducting josephson junction 7 are-9 dB and-10 dB respectively, which are decreased by about 6dB compared with the reflection parameters before the quarter-wavelength high-low impedance line 8 is not added, which is more beneficial to the transmission of the received signal and the local oscillation signal and has very good effect.
(c) By adopting a CPW (coplanar waveguide) technology and utilizing the characteristic that the periphery of the log periodic slot antenna basically has no high-frequency current, a symmetrical slot oscillator 10 is additionally arranged on the outermost layer of the log periodic slot antenna and then is smoothly led out to a medium-frequency output port 9 at the edge of a film (the field of the original antenna is not influenced as much as possible), the CPW coplanar waveguide with the characteristic impedance of about 50 ohms is selected in the embodiment, and as can be seen from a simulation result of figure 12, after the symmetrical slot oscillator 10 and the CPW coplanar waveguide are additionally arranged, the surface current on the film is mainly concentrated at the log periodic slot antenna 5 and does not flow to the symmetrical slot oscillator 10 and the CPW coplanar waveguide.
As can be seen from the simulation results of fig. 13, 14 and 15, after the symmetric slot oscillator 10 and the CPW coplanar waveguide are added, at the frequency point of 220GHz, the real part of the input impedance at the high-temperature superconducting josephson junction 7 is reduced to 8.25 ohms, the imaginary part is basically unchanged, and the reflection parameter S11 is reduced to-12.04 dB; at the frequency of 110GHz, the real part of the input impedance at the high temperature superconducting josephson junction 7 increased to 12.48 ohms, the imaginary part was substantially unchanged, and the reflection parameter S11 was increased to-7.38 dB.
From the above analysis, it can be known that the addition of the symmetric slot oscillator 10 and the CPW coplanar waveguide has no influence on the current distribution near the logarithmic period slot antenna 5 and the quarter-wavelength high-low impedance line 8, has a good influence on the input impedance and the reflection parameter at the frequency point 220GHz of the high-temperature superconducting josephson junction 7, and has a poor influence on the input impedance and the reflection parameter at the frequency point 105GHz, but the influence is very small and acceptable.
Meanwhile, as can be seen from the simulation result of fig. 16, the-3 dB bandwidth of the parameter S21 is about 29GHz, which satisfies the design requirement. Therefore, the intermediate frequency signal after down conversion can be led out under the condition of not influencing radio frequency and local oscillation signals, and the method is simple and practical.
(3) The lens 4 is designed to be hemispherical, the diameter is 6mm, and Si is selected as a material.
After the design is completed, as can be seen from fig. 5, the propagation directions of the radio frequency signal and the local oscillation signal are changed by adjusting the angles and positions of the frequency selection surface 11 and the reflecting mirror 12, and finally the radio frequency signal and the local oscillation signal reach the lens 4 at the same time, the signal gain is further improved by the lens 4 and the signal is propagated to the slot antenna 3, second harmonic mixing is completed at the high-temperature superconducting josephson junction 7 of the slot antenna 3, and the obtained intermediate frequency signal is transmitted to the intermediate frequency output port 9 through the CPW of the slot antenna 3 to be output.
As can be seen from FIG. 17, the radiation efficiency of the high temperature superconducting based dual frequency matched second harmonic THz down conversion mixer is maximum at 220GHz, and its-3 dB bandwidth is greater than 20 GHz; the radiation efficiency at 105GHz is also maximum and its-3 dB bandwidth is greater than 10 GHz.
As can be seen from fig. 18, 19 and 20, the reflection parameters of the high-temperature superconducting dual-frequency matching second harmonic THZ down-conversion mixer at 105GHz and 220GHz are-10.2 dB and-16.11 dB respectively, and the-3 dB bandwidths are greater than 10GHz and 20GHz respectively and are all minimum values; the real parts of the input impedance of the high temperature superconducting josephson junction 7 at 105GHz and 220GHz are 6.73 and 9.22 ohms, respectively, and the imaginary parts are 0 ohms.
As can be seen from fig. 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31 and 32, the directional pattern gains of XOZ and YOZ planes at 110GHz, 105GHz and 110GHz of the high-temperature superconducting dual-frequency matching second harmonic THz down-conversion mixer are both greater than 11dB, and the main and secondary lobe suppression degree is greater than 10 dB; the directional diagram gains of XOZ and YOZ surfaces at 210GHz, 220GHz and 230GHz are all larger than 18dB, and the main lobe and side lobe suppression degree is larger than 15 dB.
The above results are all satisfactory and ideal for design and are illustrative of the feasibility of the invention.
In specific implementation, the present invention may also be used to design a higher harmonic mixer, specifically:active mixing only needs to increase bias current on two sides of a high-temperature superconducting Josephson junction, at the moment, the energy requirement on harmonic waves is reduced, higher harmonic waves can be selected for mixing, and the mixing principle is as follows (2): f. ofo＝fi±nfL (2)
Wherein n is not less than 3 and n is an integer.
The foregoing merely represents embodiments of the present invention, which are described in some detail and detail, and therefore should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various changes and modifications without departing from the system concept, and all of them fall into the protection scope of the present patent. Therefore, the protection scope of this patent shall be subject to the appended claims.
Claims (8)
1. A double-frequency matching and second harmonic terahertz frequency mixer based on a high-temperature superconducting technology is characterized in that: the antenna comprises a film, a dielectric substrate, a slot antenna and a lens;
wherein, the film grows on one end of the medium substrate, the lens is arranged on the other end of the medium substrate; the slot antenna is composed of a series of slots on a film;
the slot antenna comprises a log-periodic slot antenna, an excitation positioned in the middle of the log-periodic slot antenna, symmetrical slot arrays positioned on two sides of the log-periodic slot antenna, a high-temperature superconducting Josephson junction, a coplanar waveguide, an intermediate-frequency output port and a quarter-wavelength high-low impedance line;
the design process of the slot antenna comprises the following steps:
step 1, adjusting the length and the period rate of the longest gap oscillator to enable the reflection parameter S11 of the antenna at two frequency points to be minimum value points, wherein the imaginary parts of impedance are all 0 ohm, and the real parts are all the minimum value points;
step 2, input impedances of two frequency points are simultaneously optimized to X ohm by adopting quarter-wavelength high-low impedance lines, so that nonlinear frequency mixing of the high-temperature superconducting Josephson junction is facilitated;
wherein, the value range of X is 5 to 15 ohms;
and 3, adopting a coplanar waveguide CPW, adding a symmetrical gap oscillator on the outermost layer of the slot antenna by utilizing the characteristic that the periphery of the slot antenna basically has no high-frequency current, smoothly leading out the symmetrical gap oscillator to an intermediate-frequency output port at the edge of the film, ensuring that the characteristic impedance of the CPW is about 50 ohms by adjusting the size of the CPW, and ensuring that the value of a parameter S21 is greater than-3 dB, so that the intermediate-frequency signal after frequency conversion can be led out under the condition of not influencing radio frequency and local oscillation signals.
2. The dual-frequency matching, second harmonic terahertz mixer based on the high-temperature superconducting technology of claim 1, wherein: the length and width of the film are 1-2 times larger than those of the slot antenna.
3. The dual-frequency matching, second harmonic terahertz mixer based on the high-temperature superconducting technology of claim 2, wherein: the material of the medium substrate is MgO.
4. The dual-frequency matching, second harmonic terahertz mixer based on the high-temperature superconducting technology of claim 3, wherein: the length and width dimensions of the dielectric substrate are consistent with those of the thin film.
5. The dual-frequency matching, second harmonic terahertz mixer based on the high-temperature superconducting technology of claim 4, wherein: the thickness of the dielectric substrate ranges from 200 to 1000 μm.
6. The dual-frequency matching, second harmonic terahertz mixer based on the high-temperature superconducting technology of claim 5, wherein: the lens is hemispherical, the diameter of the lens is the short side of the film, and the material is Si.
7. The dual-frequency matching, second harmonic terahertz mixer based on the high-temperature superconducting technology of claim 6, wherein: the length of the quarter-wavelength high-low impedance line is one quarter wavelength for receiving the terahertz signal.
8. The dual-frequency matching, second harmonic terahertz mixer based on the high-temperature superconducting technology of claim 7, wherein: the width of the gap of the quarter-wave high-low impedance lines and the width of the metal between the gaps are determined by the impedance values of the quarter-wave high-low impedance lines.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2021104910716 | 2021-05-06 | ||
| CN202110491071 | 2021-05-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113823888A CN113823888A (en) | 2021-12-21 |
| CN113823888B true CN113823888B (en) | 2022-05-17 |
Family
ID=78921070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111127833.0A Active CN113823888B (en) | 2021-05-06 | 2021-09-26 | Double-frequency matching and second harmonic terahertz frequency mixer based on high-temperature superconducting technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113823888B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115051652B (en) * | 2022-05-20 | 2023-03-24 | 北京理工大学 | High-temperature superconducting subharmonic mixer based on double Y-shaped on-chip antennas and mixing method |
| CN115882217A (en) * | 2023-02-21 | 2023-03-31 | 南通大学 | Low-impedance multi-source excited semicircular folding antenna |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104101427A (en) * | 2013-04-15 | 2014-10-15 | 袁博 | Three-dimensional packaging terahertz radiation detector |
| CN105092514A (en) * | 2015-08-20 | 2015-11-25 | 中国科学院重庆绿色智能技术研究院 | Scattering type scanning near field terahertz microscope |
| CN105866773A (en) * | 2016-05-16 | 2016-08-17 | 吉林大学 | High-power terahertz continuous wave two-dimensional imaging system |
| CN107196608A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of new integrated th harmonic mixer of Terahertz frequency range Band Monolithic Integrated |
| CN107370458A (en) * | 2017-07-28 | 2017-11-21 | 电子科技大学 | A kind of Terahertz mixting circuit based on single slice integration technique |
| CN108682964A (en) * | 2018-04-13 | 2018-10-19 | 东南大学 | A kind of time domain Meta Materials |
| WO2019201564A1 (en) * | 2018-04-17 | 2019-10-24 | Arcelik Anonim Sirketi | Frequency modulated continuous wave device for examining insulating panels and corresponding method |
-
2021
- 2021-09-26 CN CN202111127833.0A patent/CN113823888B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104101427A (en) * | 2013-04-15 | 2014-10-15 | 袁博 | Three-dimensional packaging terahertz radiation detector |
| CN105092514A (en) * | 2015-08-20 | 2015-11-25 | 中国科学院重庆绿色智能技术研究院 | Scattering type scanning near field terahertz microscope |
| CN105866773A (en) * | 2016-05-16 | 2016-08-17 | 吉林大学 | High-power terahertz continuous wave two-dimensional imaging system |
| CN107196608A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of new integrated th harmonic mixer of Terahertz frequency range Band Monolithic Integrated |
| CN107370458A (en) * | 2017-07-28 | 2017-11-21 | 电子科技大学 | A kind of Terahertz mixting circuit based on single slice integration technique |
| CN108682964A (en) * | 2018-04-13 | 2018-10-19 | 东南大学 | A kind of time domain Meta Materials |
| WO2019201564A1 (en) * | 2018-04-17 | 2019-10-24 | Arcelik Anonim Sirketi | Frequency modulated continuous wave device for examining insulating panels and corresponding method |
Non-Patent Citations (2)
| Title |
|---|
| 340 GHz Double-Sideband Mixer Based on Antenna-Coupled High-Temperature Superconducting Josephson Junction;Xiang Gao等;《IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY》;20200131;第10卷(第1期);第21-31页 * |
| Harmonic Mixing Using a HTS Step-Edge Josephson Junction at 0.6 THz Frequency;Jia Du等;《IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY》;20170630;第27卷(第4期);第1-5页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113823888A (en) | 2021-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113823888B (en) | Double-frequency matching and second harmonic terahertz frequency mixer based on high-temperature superconducting technology | |
| CN211017392U (en) | Broadband high-isolation double-circular-polarization feed source antenna | |
| CN107046177B (en) | Feed source of back-feed type dual-polarized parabolic antenna | |
| CN210926342U (en) | Broadband high-isolation dual-circularly-polarized antenna based on improved step diaphragm polarizer | |
| Shuliak et al. | Modern microwave polarizers and their electromagnetic characteristics | |
| Sharma et al. | A millimeter wave elliptical slot circular patch MIMO antenna for future 5G mobile communication networks | |
| Piltyay | Square waveguide polarizer with diagonally located irises for Ka-band antenna systems | |
| CN117374607A (en) | Microwave/millimeter wave double-frequency circularly polarized antenna with multiplexing patch/transmission array structure | |
| Akgiray et al. | Ultrawideband square and circular quad-ridge horns with near-constant beamwidth | |
| CN108365317B (en) | Ultra-wideband multipath microwave power synthesizer | |
| Piltyay et al. | Electromagnetic performance of waveguide polarizers with sizes obtained by single-mode technique and by trust region optimization | |
| Hu et al. | Tri-band-notched ultrawideband (UWB) antenna using split semicircular resonator (SSR) and capacitively loaded loops (CLL) | |
| Zuo et al. | Compact Dual-Band antenna with large frequency ratio | |
| CN106532249B (en) | Compact elliptical annular dual-polarized base station antenna | |
| Zhang et al. | Broadband millimeter-wave quasi-Yagi antenna using Substrate Integrated Waveguide technique | |
| Kumar et al. | Design and investigation of metamaterial antenna for wireless communication | |
| Verma et al. | Dual band millimeter wave mimo antenna loaded with srrs for 5g applications | |
| CN115051652B (en) | High-temperature superconducting subharmonic mixer based on double Y-shaped on-chip antennas and mixing method | |
| Lai et al. | A New Design of K/Ka Dual-Band Aperture Coupled Antenna | |
| Ni et al. | Multi band FSS for 5G Signal enhancement | |
| Gao et al. | Wideband 4× 4 Butler Matrix Based Substrate Integrated Coaxial Line for Millimeter-Wave Applications | |
| Gadelrab et al. | Compact Dual Linear Polarized Antenna Feed for LEO Satellites Based on Quad Ridge Waveguide | |
| Han et al. | All-metal Broadband Circularly Polarized Feed Antenna Applied to Millimeter Wave Imaging System | |
| Syadia et al. | Substrate Integrated Waveguide Horn Antennas at Millimeter Waves | |
| Shokouhi et al. | Full-Duplex Radio Frontend Architecture with Enhanced Transmitter-Receiver Isolation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |